ライフサイエンスコーパス: Bi

1 Bi(2)O(H(2)O)(2)(C(14)H(2)O(8)).nH(2)O (SU-101) was insp

2 Bi, as a nontoxic and inexpensive diamagnetic heavy meta

3 Bi-26 grows faster, produces unique metabolites, and has

4 Bi-allelic gene edited clones were validated by sequenci

5 Bi-allelic Igf2r expression suppressed intestinal adenom

6 Bi-allelic loss of function variants in TMC6, TMC8, and

7 Bi-allelic loss-of-function mutations in genes required

8 Bi-allelic loss-of-function variants in CACNA1B are pred

9 Bi-allelic loss-of-function variants in genes that encod

10 Bi-atrial intracardiac electrograms of 47 patients with

11 Bi-directional activity perturbations under DHODH blocka

12 Bi-directional contact repulsion induced by Eph/ephrin s

13 Bi-directional linkages were noted between groundwater a

14 Bi-hemispheric, syndrome-specific activations predicting

15 Bi-modal grain structure is promising in this regard, bu

16 Bi-potential neuromesodermal progenitors (NMPs) produce

17 Bi-substrate kinetic experiments revealed that ApbE foll

18 0 meV (240 meV) with the incorporation of 1% Bi, corresponding to a greater than fourfold increase in

19 n a superconducting single crystal of Sr(0.1)Bi(2)Se(3), a prime candidate for realizing topological

20 Bi(2) Se(3) )(N) or ( /Bi(2) Se(3) )-(Bi(2) /Bi(2) Se(3) )(N) (N is the repeating unit, represents an

21 -superlattice, (Bi(2) /Bi(2) Se(3) )-(Bi(2) /Bi(2) Se(3) )(N) or ( /Bi(2) Se(3) )-(Bi(2) /Bi(2) Se(3)

22 reduced-dimensional TI-superlattice, (Bi(2) /Bi(2) Se(3) )-(Bi(2) /Bi(2) Se(3) )(N) or ( /Bi(2) Se(3)

23 ion and a maximum PLQY of 34 +/- 4% for Cs(2)Bi(0.085)In(0.915)AgCl(6).

24 series of Bi(3+)/In(3+) mixed-cationic Cs(2)Bi(1-x)In(x)AgCl(6) HDP solid solutions that span the in

25 random Bi(3+)/In(3+) cationic mixing in Cs(2)Bi(1-x)In(x)AgCl(6) HDPs.

26 -structured Bi(4)O(7)/Bi(3.33)(VO(4))(2)O(2)/Bi(46)V(8)O(89) photoelectrode is presented.

27 heterovalent cations (e.g., Sn(2+), Zn(2+), Bi(3+)) at room temperature.

28 adrupolar nuclei ((115)In, (133)Cs, and (209)Bi), we show that there is a high degree of atomic-level

29 hydrogen-like and lithium-like bismuth (209)Bi(82+,80+) with a precision that is improved by more th

30 f naturally monoisotopic bismuth metal ((209)Bi) via the (alpha, 2n) reaction.

31 r the first time that PRIT with TF2 and (213)Bi-IMP288 is feasible and at least as effective as (177)

32 alpha-particle-emitting analogs of L1, (213)Bi-L1 and (225)Ac-L1, to evaluate their safety and cell

33 experimental data of antibody-mediated (213)Bi and (225)Ac delivery in a metastatic transgenic breas

34 In vivo accumulation of (213)Bi-IMP288 in LS174T tumors was observed as early as 15 m

35 The biodistribution of (213)Bi-L1 and (225)Ac-L1 revealed specific uptake of radioac

36 take, cell kill, and biodistribution of (213)Bi-L1 and (225)Ac-L1 were evaluated.

37 Results: (213)Bi- and (225)Ac-L1 demonstrated specific cell uptake and

38 Ls) between B. longum subsp. infantis Bi-26 (Bi-26) and the type strain.

39 2D Bi(2) O(2) Se arrayed sensors integrated in parallel for

40 Se atomic layer formed on the surface of 2D Bi(2) O(2) Se exposed to oxygen, which contributes to la

41 teristics involving ease integration show 2D Bi(2) O(2) Se is an ideal candidate for trace oxygen det

42 Such 2D Bi(2) O(2) Se oxygen sensors have remarkable oxygen-adso

43 ganic lead-free perovskite derivative, Cs(3) Bi(2) I(9) , exhibits strong light-matter interaction an

44 llent optical and valley properties of Cs(3) Bi(2) I(9) arise from the unique parallel bands, accordi

45 Bi(2) /Bi(2) Se(3) )(N) or ( /Bi(2) Se(3) )-(Bi(2) /Bi(2) Se(3) )(N) (N is the repeating unit, repres

46 onal TI-superlattice, (Bi(2) /Bi(2) Se(3) )-(Bi(2) /Bi(2) Se(3) )(N) or ( /Bi(2) Se(3) )-(Bi(2) /Bi(2

47 based PeNCs of general chemical formulas A(3)Bi(2)I(9), in which cation A(+) = Rb(+) or Cs(+) or CH(3

48 PeNC of Cs(3)Bi(2)I(9) had the best photocatalytic activity for the r

49 method to grow large size high-quality Cs(3)Bi(2)I(9) perovskite single crystals (PSCs).

50 We report n-type magnesium bismuthide (Mg(3)Bi(2))-based materials with a peak figure of merit (ZT)

51 n-type Mg(3)Bi(2)-based materials are promising for thermoelectric c

52 This Bi(2)Te(3)/Bi(0.5)Sb(1.5)Te(3) TEG exhibits S = 250 muV/K per pair

53 is of metastable ordered intermetallic Pd(31)Bi(12) at room-temperature in minutes via electrochemica

54 Pd(31)Bi(12) is highly active for the reduction of O(2) to H(2

55 e study, self-identifying as Asian (n = 32), Bi-/multi-racial (n = 10), Black (n = 22), White (n = 23

56 00 degrees C sintered Mg(3 + delta) Sb(1.49) Bi(0.5) Te(0.01) , the highest ever reported for Mg(3) S

57 crete example, Ni(2+) -mediated (1-x)Na(0.5) Bi(0.5) TiO(3) -xBa(Ti(0.5) Ni(0.5) )O(3-delta) (x = 0.0

58 g in nanocomposite films of (SmMnO(3))(0.5)((Bi,Sm)(2)O(3))(0.5), we demonstrate room temperature fer

59 ternary heterojunction-structured Bi(4)O(7)/Bi(3.33)(VO(4))(2)O(2)/Bi(46)V(8)O(89) photoelectrode is

60 k coefficient of ~ -230 muV K(-1) in Pb(0.98)Bi(0.02)Se is close to the golden range, leading to a fi

61 e in Delta(SO) in going from GaP to GaP(0.99)Bi(0.01).

62 A Bi(OTf)3-catalyzed ring-opening cyclization of (hetero)a

63 esent the catalytic activation of N(2)O at a Bi(I) Bi(III) redox platform.

64 th perfluoroalkyl sulfonate salts based on a Bi(III)/Bi(V) redox cycle.

65 Herein we present a Bi-catalyzed cross-coupling of arylboronic acids with pe

66 plore a model system of catalytically active Bi-Sn nano-alloys produced using a liquid-phase ultrason

67 we demonstrate the first example of a 2D Ag-Bi iodide DP with a direct bandgap of 2.00(2) eV, templa

68 e to the smallest grain dimensions among all Bi-Sn ratios along with more pronounced dislocation form

69 American, Asian, Hispanic, Native American, Bi- or Multi-racial and Pacific Islander.

70 quasi-1D systems such as W(110):H(1 x 1) and Bi(114), to quasi-2D layered chalcogenides, and high-dim

71 he semiconducting Bi(3.33)(VO(4))(2)O(2) and Bi(46)V(8)O(89) components, and the rectifying contact b

72 ials, including WTe(2), WSe(2), TiSe(2), and Bi(2)Sr(2)CaCu(2)O(8+delta).

73 x)Eu(0.2)Sr(x)CuO(4), La(2-x)Sr(x)CuO(4) and Bi(2)Sr(2-x)La(x)CuO(6+delta).

74 rectifying contact between the Bi(4)O(7) and Bi(3.33)(VO(4))(2)O(2) phases acting afterward as a conv

75 PseAAC), auto-correlation function (ACF) and Bi-gram position-specific scoring matrix (Bi-gram PSSM)

76 processes for the vapor generation of Ag and Bi.

77 principally from Ag-d/I-p (valence band) and Bi-p/I-p (conduction band) states.

78 othermic by -10.4 kcal mol(-1), while Cs and Bi guests are too large to be accommodated but are stabl

79 lso consider the addition of Li, He, Cs, and Bi, to probe the utility of the exo/ endo cages as host-

80 e analysis of ultratrace Se, Ag, Sb, Pb, and Bi in archaea cells and single conodont samples.

81 The precision of Se, Ag, Sb, Pb, and Bi in the present method is evaluated to be better than

82 rated that the dissolved Se, Ag, Sb, Pb, and Bi ions in solution samples are readily and simultaneous

83 taneous determination of Se, Ag, Sb, Pb, and Bi is 10 ng L(-1) (200 fg), 2 ng L(-1) (40 fg), 5 ng L(-

84 nsitive determination of Se, Ag, Sb, Pb, and Bi is realized with a sample volume of only 20 muL and t

85 of electrons and holes in [WO(4) ](-2) and [Bi(2) O(2) ](+2) layers respectively with a large in-pla

86 ious heterostructures of [MnBi(2)Te(4)] and [Bi(2)Te(3)] layers possible by exfoliation.

87 tive to the interaction of antiferromagnetic Bi(0.9)La(0.1)FeO(3) with ionic conductor KBr, can be re

88 Bismuth-antimony (Bi-Sb) alloy is a promising material for thermoelectric

89 We report the growth of self-assembled Bi(2)Se(3) quantum dots (QDs) by molecular beam epitaxy

90 produced by laser vaporization of a mixed B/Bi target and characterized by photoelectron spectroscop

91 ing the analysis of 22 elements (As, Ba, Be, Bi, Cd, Co, Cr, Cu, K, Mn, Mo, Na, Ni, P, Pb, Th, Tl, Sb

92 for the WTI state in a bismuth iodide, beta-Bi(4)I(4).

93 ies unconventional superconductivity of beta-Bi(2)Pd and is consistent with a spin-triplet pairing sy

94 in mesoscopic rings of superconducting beta-Bi(2)Pd thin films.

95 nd alter the long-range interactions between Bi(2)Te(3) and the substrate.

96 nductivity realized at the interface between Bi(2)Te(3) and non-superconductor FeTe is one such candi

97 Bi(2)Sr(2)CuO(6+delta) (Bi2201) and bilayer Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi2212) to beyond the maxim

98 Bismuth (Bi) has been known as a highly efficient electrocatalyst

99 Studies of nanosized forms of bismuth (Bi)-containing materials have recently expanded from opt

100 used trace elements [antimony (Sb), bismuth (Bi), lead, or tellurium] to stabilize high-index facets.

101 We observed that bismuth (Bi) might be a promising candidate for this task because

102 and particularly from those containing both Bi and Te.

103 an that of atomic layer Bi(3)O(4)Br and bulk Bi(3)O(4)Br, respectively.

104 n fixation activity, respectively, than bulk Bi(3) O(4) Br.

105 Defect-rich single-unit-cell Bi(3) O(4) Br displays 4.9 and 30.9 times enhanced photo

106 tomically thin structure of single-unit-cell Bi(3) O(4) Br nanosheets with surface defects is propose

107 ained well inside the mid-infrared, choosing Bi(2)Te(3) as case study within this family of materials

108 A systematic transport study of the codoped (Bi,Sb)2 Te3 films with varied Cr/V ratios reveals that m

109 e to self-polarization in the ion-conducting Bi(46)V(8)O(89) constituent.

110 the spin Hall angle in a modulation-doped Cr-Bi(x) Sb(2-) (x) Te(3) (Cr-BST) film is quantitatively d

111 uid/solid helium, or in dielectric crystals (Bi, NaF) at low temperatures.

112 vious work has demonstrated that Sn, Ge, Cu, Bi, and Sb ions could be used as alternative ions in per

113 elta(r) modulations in the canonical cuprate Bi(2)Sr(2)CaCu(2)O(8+delta) that have eight-unit-cell pe

114 nsfer-hydrogenation utilizing a well-defined Bi(I) complex as catalyst and ammonia-borane as transfer

115 superconductor Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi-2212; here, a monolayer refers to a half unit cell th

116 Stable free-standing two-dimensional Bi monolayer (Bismuthene) structures have been predicted

117 ug(-1)) from several grams of acid-dissolved Bi metal, a manual milliliter-scale solvent extraction p

118 pological insulators (MTIs) of the Cr-doped (Bi,Sb)(2)(Se,Te)(3) class of materials as they share the

119 a magnetic topological insulator, Cr-doped (Bi,Sb)(2)Te(3).

120 tic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of ver

121 ic CrSb and ferromagnetic order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phe

122 found three power factor maxima when doping Bi with Pb.

123 l the intermediacy of a highly electrophilic Bi(V) species, which rapidly eliminates phenyl triflate.

124 r) consisting of nanosized (~100 nm) ferrite Bi(0.9)La(0.1)FeO(3) (BLFO) conjugated with fine grinded

125 from traditional perovskite ferroelectrics, Bi(2) WO(6) with a layered structure shows a great poten

126 icle radius increases from ~0.2 to ~4 nm for Bi and Pb substrates and then reaches a limiting plateau

127 time scale in bismuth vanadate with formula Bi(0.913)V(0.087)O(1.587), which exhibits remarkable oxi

128 The heterogeneous metal-organic framework Bi-BTC successfully catalyzed the synthesis of para-xyle

129 nch-predictable superconducting magnets from Bi-2212.

130 +/- 19.5 h) versus Asians (44.1 +/- 14.0 h), Bi-/multi-racial (48.0 +/- 16.0 h), and Whites (50.2 +/-

131 the catalytic activation of N(2)O at a Bi(I) Bi(III) redox platform.

132 e deactivation rate processes, especially if Bi-based s-orbitals participate on the bond with the met

133 uoroalkyl sulfonate salts based on a Bi(III)/Bi(V) redox cycle.

134 he short-circuit photocurrent is achieved in Bi(2) WO(6) /SrTiO(3) at room temperature.

135 nstrate major strain specific adaptations in Bi-26 to efficient utilization of FLs.

136 different mechanisms of symmetry breaking in Bi(2)Te(3) TI thin films: surface plasmon generation, ch

137 We confirm the symmetry breaking in Bi(2)Te(3) via the emergence of the Raman-forbidden [For

138 manipulation of surface THz conductivity in Bi(2)Se(3).

139 ent transport of non-equilibrium excitons in Bi(2-x)Sb(x)Se(3) nanoribbons.

140 th this, genetic instability was greatest in Bi-Tg thyrocytes with a mean genetic instability (GI) in

141 ZT of less than ~0.3 measured below 150 K in Bi-Te alloys commonly used for cryogenic cooling applica

142 es that connect pairs of Bi(2)O(2) layers in Bi(2)O(2)Se and the terminal chloride sites that produce

143 etic-like hysteresis loop can be observed in Bi(1-z)La(z)FeO(3) ceramics with z <= 0.15, which magnet

144 vel characterization of topological phase in Bi(2)Se(3) nanowire via nanomechanical resonance measure

145 ements of scanning tunneling spectroscopy in Bi(2)Sr(2)CaCu(2)O(8+delta) and conduct the analysis of

146 effect of the topological surface states in Bi(2)Te(2)Se thin films with large tunability using vari

147 olve the basal dislocation core structure in Bi(2)Te(3), quantifying the disregistry of the atomic pl

148 W state coexisting with superconductivity in Bi(2)Sr(2)CaCu(2)O(8+delta).

149 of the band gap at increasing temperature in Bi-Sb alloy for the first time.

150 ugar transport clusters to be upregulated in Bi-26 involved in processing of 2'-FL along with metabol

151 nanoparticles of Fe, Co, Ni, Cu, Zn, Cd, In, Bi, and Pb with uniform sizes (controllable between 3 to

152 the PbTe-like sublattice and soft Tl-Bi (In-Bi) bonding interaction is responsible for intrinsic low

153 DFL (FLs) between B. longum subsp. infantis Bi-26 (Bi-26) and the type strain.

154 L) in Bifidobacterium longum subsp. infantis Bi-26.

155 on by Bifidobacterium longum subsp. infantis Bi-26.

156 id extrusion of 3D-printable composite inks (Bi(2)Te(3) n- or p-type micrograins within a non-conduct

157 uctivity by doping the topological insulator Bi(2)Se(3), we find that there exist highly anisotropic

158 n-film, ferromagnetic topological insulator (Bi, Sb)2-x V x Te3.

159 (FeCo)(1-) (x) by the topological insulator [Bi(2) Se(3) and (BiSb)(2) Te(3) ] is investigated at roo

160 solated single atom cobalt incorporated into Bi(3)O(4)Br atomic layers is successfully prepared.

161 structure measurements using a pulsed 60 keV Bi(3)(2+) beam or a continuous 30 keV Ga(+) beam reveals

162 nd 32 times higher than that of atomic layer Bi(3)O(4)Br and bulk Bi(3)O(4)Br, respectively.

163 and properties of the van der Waals material Bi(4)O(4)SeCl(2), which is a 1:1 superlattice of the str

164 nd Bi-gram position-specific scoring matrix (Bi-gram PSSM) are employed to extract protein sequence f

165 Mechanistically, Bi(OTf)3 serves as a stable and easy to handle precursor

166 rates bi-directional Long Short-Term Memory (Bi-LSTM), Convolutional Neural Network (CNN), and Condit

167 a (15) NH(3) production rate of 5.453 mug mg(Bi) (-1) h(-1) and a Faradaic efficiency of 11.68 % at -

168 h acetic acid or formic acid as modulators: [Bi(2)(cpb)(acetato)(2)(dmf)(2)].2dmf CTH-6 forms a rtl-n

169 Monolayer Bi-2212 therefore displays all the fundamental physics o

170 The properties of monolayer Bi-2212 become extremely tunable; our survey of supercon

171 sition temperatures (T(c)s) of the monolayer Bi(2)Sr(2)CuO(6+delta) (Bi2201) and bilayer Bi(2)Sr(2)Ca

172 Moreover, Bi substitution significantly tunes the Seebeck coeffici

173 iple bond was first observed in BiB(2) O(-) [Bi=B-B=O](-) in which both boron atoms can be viewed as

174 Several Bi 6p x/y bands of Y2 O2 Bi are raised in energy by oxygen doping because the 2p

175 erconductivity is satisfied in O-doped Y2 O2 Bi.

176 analysis provides insight into the action of Bi as an isovalent impurity, and constitutes the first d

177 epresents the first synthetic application of Bi(N)-HVIs and demonstrates their potential as a platfor

178 the emergence of an optically active band of Bi-hybridised states, accounting for the overall large b

179 monic, and low/high-index characteristics of Bi:Sb:Te alloys are explored.

180 Concentrations of Bi and Te contaminants in the (211)At and the astatinate

181 ion arises due to increasing contribution of Bi p orbitals in the conduction band edge of (GeTe)(100-

182 Furthermore, the alloying/dealloying of Bi occurs at different rates and under different conditi

183 he Bi(2)O(2)Se units to allow exfoliation of Bi(4)O(4)SeCl(2) to 1.4 nm height.

184 nowledge of nucleation and further growth of Bi(2)Se(3) nanoplates on different substrates is crucial

185 te the evolution of the magnetoresistance of Bi(2)Te(x)Se(3-x) for varying chalcogen ratios and const

186 d photoemission spectroscopy measurements of Bi(2)Sr(2)CaCu(2)O(8+delta) over a wide range of doping

187 his is the first experimental observation of Bi-B double and triple bonds, opening the door to design

188 g selenide anion sites that connect pairs of Bi(2)O(2) layers in Bi(2)O(2)Se and the terminal chlorid

189 able and training-quench-free performance of Bi-2212 racetrack coils wound with a Rutherford cable fa

190 This retains the electronic properties of Bi(2)O(2)Se while reducing the dimensionality of the bon

191 at unpredictable locations, the quenches of Bi-2212 magnets consistently occurred in the high field

192 Here, we present a series of Bi(3+)/In(3+) mixed-cationic Cs(2)Bi(1-x)In(x)AgCl(6) HD

193 solved photoemission spectroscopy studies of Bi[Formula: see text]Sr[Formula: see text]CaCu[Formula:

194 Light-sensitive capacitance variation of Bi(0.95)La(0.05)FeO(3) (BLFO) ceramics has been studied

195 activity of a single, isolated Pt deposit on Bi and Pb supports to probe the size and substrate effec

196 ing; we prepared an individual Pt deposit on Bi and Pb ultramicroelectrodes (UMEs) such as a single i

197 neral insight into the diffusion of water on Bi[Formula: see text]Te[Formula: see text].

198 atite from Durango, Mexico using 2 GeV Au or Bi ions provided by an ion accelerator facility.

199 ) (bilayered, with M(I) = Ag, M(III) = In or Bi).

200 m = 2 and A = BDA, M(I) = Ag, M(III)= In or Bi, X = Cl or Br) and PA(2)CsM(I)M(III)Br(7) (bilayered,

201 Bi(2) Se(3) )-(Bi(2) /Bi(2) Se(3) )(N) or ( /Bi(2) Se(3) )-(Bi(2) /Bi(2) Se(3) )(N) (N is the repeati

202 tates associated with the [MnBi(2)Te(4)] or [Bi(2)Te(3)] termination, respectively.

203 XVII catalyzes DNA methylation in an ordered Bi Bi mechanism in which the AdoMet binding precedes DNA

204 Here, the perovskite oxide Bi(0.15) Sr(0.85) Co(0.8) Fe(0.2) O(3-) (delta) (BiSCF)

205 rface methodology to identify the optimal Pd-Bi-Te catalyst stoichiometry.

206 antly higher in the PFA(Bi) group (18/18 PFA(Bi), 10/18 PFA(Mono), 3/6 radiofrequency, P=0.002).

207 ith monophasic (PFA(Mono)) and biphasic (PFA(Bi)) waveforms in 7 and 7 swine sequentially and irrigat

208 rability was significantly higher in the PFA(Bi) group (18/18 PFA(Bi), 10/18 PFA(Mono), 3/6 radiofreq

209 The PFA(Bi) waveform induced significantly less skeletal muscle

210 ermost metal layers form a low melting point Bi(33.7)In(66.3) solder shell (72 degrees C).

211 ating septuple [MnBi(2)Te(4)] and quintuple [Bi(2)Te(3)] layers, we show that it is ferromagnetic in

212 eriments revealed that ApbE follows a random Bi Bi sequential kinetic mechanism, in which a ternary c

213 to unravel the complete atomic-level random Bi(3+)/In(3+) cationic mixing in Cs(2)Bi(1-x)In(x)AgCl(6

214 on in situ generation of a uniquely reactive Bi(V) arylating agent from a bench-stable Bi(III) precur

215 ore, we successfully synthesized defect-rich Bi nanoplates as an efficient noble-metal-free N(2) redu

216 quantitative testing method, the defect-rich Bi(110) nanoplates achieved a (15) NH(3) production rate

217 Mg(3) (Sb,Bi)(2) alloys have recently been discovered as a competi

218 udies predict that single crystals Mg(3) (Sb,Bi)(2) can exhibit higher thermoelectric performance nea

219 akes it challenging to grow n-type Mg(3) (Sb,Bi)(2) single crystals.

220 indicates that single-crystalline Mg(3) (Sb,Bi)(2) solid solutions can exhibit higher zT compared to

221 o the commercial bismuth telluride selenide (Bi(2)Te(3-) (x) Se (x) ) but much cheaper.

222 sor based on 2D high-mobility semiconducting Bi(2) O(2) Se nanoplates.

223 rons) at the interface of the semiconducting Bi(3.33)(VO(4))(2)O(2) and Bi(46)V(8)O(89) components, a

224 three-dimensionally connected semiconductor Bi(2)O(2)Se.

225 Several Bi 6p x/y bands of Y2 O2 Bi are raised in energy by oxyg

226 a flexible polyimide substrate, a sputtered Bi(2)Te(3)/GeTe TEG with Seebeck coefficient (S) of 140

227 , thermoelectric properties of R2R sputtered Bi(2)Te(3) films are reported and we demonstrate the abi

228 ve Bi(V) arylating agent from a bench-stable Bi(III) precursor via telescoped B-to-Bi transmetallatio

229 9%, respectively) were induced by the stiff (Bi,Sm)(2)O(3) nanopillars embedded.

230 -efficient ternary heterojunction-structured Bi(4)O(7)/Bi(3.33)(VO(4))(2)O(2)/Bi(46)V(8)O(89) photoel

231 (x) alloy(,) in GaP(1-x)Bi(x) substitutional Bi creates localised impurity states lying energetically

232 stals of the high-temperature superconductor Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi-2212; here, a monolayer

233 single reduced-dimensional TI-superlattice, (Bi(2) /Bi(2) Se(3) )-(Bi(2) /Bi(2) Se(3) )(N) or ( /Bi(2

234 l alloying of transition metals, and surface Bi modification to their electrocatalytic properties are

235 rolyte, due to the contribution from surface Bi modification being negligible, transition metal alloy

236 e other studied reactions, where the surface Bi is highly favorable for improving catalytic activity,

237 onic states N(r) within the halo surrounding Bi(2)Sr(2)CaCu(2)O(8) vortex cores.

238 ible with the 6p x/y orbitals of surrounding Bi atoms.

239 erial and p-type bismuth antimony telluride (Bi(0.5)Sb(1.5)Te(3)) has produced a large temperature di

240 red chalcogenides such as bismuth telluride (Bi(2)Te(3)) are of significant interest for thermoelectr

241 Bismuth telluride (Bi(2)Te(3))-based alloys have remained the state-of-the-

242 ored class of compounds which we have termed Bi(N)-HVIs.

243 ssing a new type of Split-GFP that we termed Bi-Genomic Mitochondrial-Split-GFP (BiG Mito-Split-GFP).

244 urements, suggests that Ce[Formula: see text]Bi[Formula: see text]Pd[Formula: see text] may exhibit q

245 Here we show that Ce[Formula: see text]Bi[Formula: see text]Pd[Formula: see text], owing to its

246 The Bi(2) -terminated superlattice exhibits a single Dirac c

247 The Bi-B double and triple bond strengths are calculated to

248 The Bi-Sn ratio determines the grain boundary properties and

249 topological surface states can exist at the Bi(2)Te(3)/substrate interface, which is in a good agree

250 have discovered that La substitutions at the Bi-site lead to a progressive increase in the degeneracy

251 ents, and the rectifying contact between the Bi(4)O(7) and Bi(3.33)(VO(4))(2)O(2) phases acting after

252 nality of the bonding network connecting the Bi(2)O(2)Se units to allow exfoliation of Bi(4)O(4)SeCl(

253 In contrast, the Bi(2) Se(3) -terminated superlattice is identified as a

254 nonreciprocal phenomenon is detected in the Bi(2)Te(3)/FeTe heterostructure associated with the supe

255 quintessential topological insulators in the Bi(2)X(3) family (X = O, S, Se, Te), are extremely promi

256 The cobalt single atoms in the Bi(3)O(4)Br favors the charge transition, carrier separa

257 sitions are correlated to the changes in the Bi-Te bond and bond angle as function of pressures.

258 We studied magnetostatic response of the Bi(0.9)La(0.1)FeO(3)- KBr composites (BLFO-KBr) consisti

259 d further lateral and vertical growth of the Bi(2)Se(3) nanoplates is analysed.

260 pose that the outstanding performance of the Bi(24) O(31) Br(10) (OH)(delta) photocatalyst is associa

261 ing arylation, high-yielding recovery of the Bi(III) precursor allows for its efficient re-use in sub

262 ral and excited state characteristics of the Bi-based analogues, which according to DFT calculations

263 in superior power factors than those of the Bi-containing analogues.

264 The limiting kinetics on the Bi substrate approaches that of bulk Pt while that on th

265 Cyclic voltammetry analyses showed that the Bi electrode exhibited a high catalytic activity to redu

266 Here we show that the Bi(24) O(31) Br(10) (OH)(delta) photocatalyst is very ef

267 rial: a slower diffusion process through the Bi-O sublattice and a faster process which corresponds t

268 slow addition of aqueous NH(2)OH.HCl to the Bi target dissolved in HNO(3) to convert to a HCl matrix

269 substrate choice and film thickness on the (Bi, Sb)2Te3 unit cell using high-resolution X-ray diffra

270 formance of Nb-Ti and Nb(3)Sn magnets, these Bi-2212 magnets showed no training quenches and entered

271 sing substrate for obtaining of 1-5 nm thick Bi(2)Se(3) films.

272 This Bi(2)Te(3)/Bi(0.5)Sb(1.5)Te(3) TEG exhibits S = 250 muV/

273 in the cytosol, the self-reassembly of this Bi-Genomic-encoded Split-GFP is confined to mitochondria

274 Magneto-thermoelectric effects of this Bi-Sb alloy further improved the TE properties, leading

275 the surface of a topological insulator (TI), Bi[Formula: see text]Te[Formula: see text].

276 (+), Ca(2+)), and exogeneous metals (Ni, Ti, Bi).

277 ding in the PbTe-like sublattice and soft Tl-Bi (In-Bi) bonding interaction is responsible for intrin

278 stable Bi(III) precursor via telescoped B-to-Bi transmetallation and oxidation.

279 e alternative to the state-of-the-art n-type Bi(2) (Te,Se)(3) thermoelectric alloys.

280 c materials used at room temperature (n-type Bi(2) Te(3) ) while reaching zT 1.4 at 700 K, allowing a

281 150 K) has been achieved in melt-spun n-type Bi(85)Sb(15) bulk samples consisting of micron-size grai

282 t single atoms and two-dimensional ultrathin Bi(3)O(4)Br atomic layers, the optimized catalyst can pe

283 Possibility to obtain ultrathin Bi(2)Se(3) thin films on these substrates is evaluated.

284 on mechanism for photoreduction of CO(2) via Bi-based PeNC photocatalysts to form CO, CH(4), and othe

285 synthesized through alloying/dealloying with Bi in a tube furnace at 900-1000 degrees C.

286 The highest yields were observed with Bi-, Te-, and Pb-based additives, and particularly from

287 ich the central Na(+) has been replaced with Bi(3+) or Sm(3+).

288 by a factor of 20 after transformation with Bi into tetrahexahedral particles.

289 served for the BLFO (pure KBr matrix without Bi(1-x)La(x)FeO(3) has no magnetic response as anticipat

290 In this work, Bi(2)Se(3) nanoplates were deposited under the same expe

291 Deep-level defects in n-type GaAs1-x Bi x having 0 </= x </= 0.023 grown on GaAs by molecular

292 Recently, (Sb1-x Bi x )2Te3 was introduced as a non-metallic TI whose car

293 of observing excitonic instability of (Sb1-x Bi x )2Te3.

294 ntal and theoretical analysis of the GaP(1-x)Bi(x) alloy band structure.

295 In contrast to the well-studied GaAs(1-x)Bi(x) alloy(,) in GaP(1-x)Bi(x) substitutional Bi create

296 l-studied GaAs(1-x)Bi(x) alloy(,) in GaP(1-x)Bi(x) substitutional Bi creates localised impurity state

297 oscopic ellipsometry measurements on GaP(1-x)Bi(x)/GaP epitaxial layers up to x = 3.7% we observe a g

298 analyze the characteristics of n-type Pb(1-x)Bi(x)Se thermoelectric materials.

299 ological insulators Nb(x)Bi(2)Se(3) and Cu(x)Bi(2)Se(3) reveal that this symmetry breaking occurs at

300 e nematic superconducting pairing in the M(x)Bi(2)Se(3) (M = Cu, Sr, Nb) superconductor family.

301 nts of the doped topological insulators Nb(x)Bi(2)Se(3) and Cu(x)Bi(2)Se(3) reveal that this symmetry