ライフサイエンスコーパス: GaAs

1 GaAs based optoelectronic devices (e.g. solar cells, mod

2 GaAs nano-ridge waveguides with embedded p-i-n diodes an

3 ilm grown on Ge buffers deposited on a (001) GaAs substrate.

4 (As) vacancies in the gallium arsenide 110 [GaAs(110)] surface with atomic precision, thereby tuning

5 location in a freestanding GaAs/In0.2Ga0.8As/GaAs membrane by synchrotron X-ray micro-beam Laue diffr

6 ium burst of coherent spin transfer across a GaAs/ZnSe interface, but less than 10% of the total spin

7 Here we report phonon generation in a GaAs double quantum dot, configured as a single- or two-

8 state of exciton polaritons is observed in a GaAs multiple quantum-well microcavity from the decrease

9 can quench dynamic nuclear polarization in a GaAs quantum dot, because spin conservation is violated

10 bit is a resonant exchange qubit hosted in a GaAs triple quantum dot.

11 each consisting of an electron confined in a GaAs/AlGaAs double quantum dot.

12 k modes - kink magnetoplasmons (KMPs) - in a GaAs/AlGaAs two-dimensional electron gas (2DEG) system.

13 Images of the surface electric fields of a GaAs/AlxGa1-xAs heterostructure sample show individual p

14 describe electron-emission measurements on a GaAs/AlGaAs heterostructure that introduces an internal

15 the technique on a prototypical 2D system, a GaAs quantum well, we uncover signatures of many-body ef

16 We demonstrate the method using a GaAs multi-quantum well sample.

17 antimony, as well as their interface with a GaAs (100) substrate.

18 an n-type FMS, CdCr(2)Se(4), into an AlGaAs/GaAs-based light-emitting diode structure.

19 um gallium arsenide/gallium arsenide (AlGaAs/GaAs) double heterostructure is used both as emitter and

20 ned electron density in an individual AlGaAs/GaAs heterojunction via hyperfine shifts.

21 nescence and spectral response of the AlGaAs/GaAs structure is conducted at elevated temperatures.

22 Six hundred AlGaInP/GaAs light-emitting diode segments with a chip size of 2

23 d, valence spectra of Ga(0.97)Mn(0.03)As and GaAs, and these are in good agreement with theory.

24 B permanent magnets, integrated circuits and GaAs/GaP-based light-emitting diodes, demanding 22-37%,

25 in an InGaAs quantum well as an emitter, and GaAs as an active mediator of surface plasmons for enhan

26 nventional semiconductors such as Si, Ge and GaAs.

27 gh electron mobility transistors (HEMTs) and GaAs-based vertical cavity surface emitting lasers (VCSE

28 l system to illustrate basic principles, and GaAs, as a technologically-relevant material to illustra

29 nation losses seen in high-efficiency Si and GaAs devices.

30 r traditional semiconductors (such as Si and GaAs), would bring wide benefits for applications in ult

31 on-chip integration of Si3N4 waveguides and GaAs nanophotonic geometries with InAs quantum dots.

32 approach with three different applications: GaAs-based metal semiconductor field effect transistors

33 We report gallium arsenide (GaAs) growth rates exceeding 300 um h(-1) using dynamic

34 Gallium arsenide (GaAs) is a semiconductor utilized in the electronics ind

35 Here we image gallium arsenide (GaAs) nanowires during growth as they switch between pha

36 mpound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applicati

37 a single, naturally formed gallium arsenide (GaAs) quantum dot have been measured with high spatial a

38 ong electrons and holes in gallium arsenide (GaAs) quantum wells.

39 esent data from an induced gallium arsenide (GaAs) quantum wire that exhibits an additional conductan

40 ity, reliability and cost, gallium arsenide (GaAs) remains the established technology for integrated

41 lly thin high-permittivity gallium arsenide (GaAs) substrate layer.

42 ations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body pert

43 tors such as silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) have band gaps that m

44 ron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in the host lattice are

45 Germanium (Ge) and Gallium Arsenide (GaAs), with their high carrier mobility and lattice-matc

46 rt the electrically driven gallium arsenide (GaAs)-based laser diodes fully fabricated on 300-mm Si w

47 The compound semiconductor gallium-arsenide (GaAs) provides an ultra-clean platform for storing and m

48 epitaxial silver film on a gallium arsenide [GaAs(110)] surface was synthesized in a two-step process

49 On flat gallium arsenide [GaAs(110)] terraces, the injection efficiency was 92%, w

50 Other porous substrates such as GaAs and GaN, with similar surface characteristics but d

51 Gallium pnictides, such as GaAs and GaP, are among the most widely used semiconduct

52 wing in spin-orbit-coupled materials such as GaAs and InGaAs and for laser light traversing dielectri

53 The 4 crystal symmetry in materials such as GaAs can enable quasi-phasematching for efficient optica

54 mentation of compound semiconductors such as GaAs in applications whose cost structures, formats, are

55 e electronic properties of materials such as GaAs, and is important for spintronic devices.

56 tures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger qua

57 those in a zinc-blende semiconductor such as GaAs.

58 at of direct band gap semiconductors such as GaAs.

59 In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer indiv

60 e realizable in an experimental system of Au/GaAs(111) surface with an SOC gap of approximately 73 me

61 ct band gap semiconductors similar to binary GaAs or InAs.

62 to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high

63 sh between contaminant levels of Ga and bulk GaAs structure in a depth profile of a MnAs/GaAs heteroj

64 e report the manipulation of the SHE in bulk GaAs at room temperature by means of an electrical inter

65 anges in the photoelastic properties of bulk GaAs.

66 than that obtained from the surface of bulk GaAs.

67 emonstrate that a hybrid structure formed by GaAs nanowires with a highly dense array of bow-tie ante

68 important optoelectronic materials such as c-GaAs(s).

69 Crystalline GaAs (c-GaAs) has been prepared directly through electroreductio

70 s-prepared films confirmed the identity of c-GaAs(s).

71 utions of dissolved As(2)O(3)(aq) was pure c-GaAs(s) at much lower temperatures than 200 degrees C.

72 emperature on the quality of the resultant c-GaAs(s).

73 of electrons and lattice in current-carrying GaAs/AlGaAs devices exhibit remarkable discrepancies, in

74 tten with EBL on a positive EB-resist coated GaAs and developed followed by shallow inductively coupl

75 TiO2-coated GaAs and GaP photoelectrodes exhibited photovoltages of

76 Colloidal GaAs quantum wires with diameters of 5-11 nm and narrow

77 ffusion studies with isotopically controlled GaAs and GaP have been restricted to Ga self-diffusion,

78 uced by anisotropic etching of oxide-covered GaAs nanocrystals with 6 M HCl(aq).

79 Crystalline GaAs (c-GaAs) has been prepared directly through electro

80 cs of the in situ cleaved single-crystalline GaAs(110) substrates.

81 bserved, and use these predictions to design GaAs heterostructures.

82 nal channels--are usually defined from doped GaAs/AlGaAs heterostructures using electron-beam lithogr

83 The discovery of ferromagnetism in Mn-doped GaAs has ignited interest in the development of semicond

84 we study a cavity device with four embedded GaAs quantum wells hosting excitons that are spectrally

85 nguishability by deterministically embedding GaAs quantum dots in broadband photonic nanostructures t

86 a serious contender to the well-established GaAs platform for a wide range of applications relying o

87 e anneal, the N 1s peak of hydrazine-exposed GaAs nanocrystals shifted to 3.2 eV lower binding energy

88 excite Larmor precession at an epitaxial Fe/GaAs interface by converting femtosecond laser pulses in

89 lectrical spin injection and detection in Fe/GaAs/Fe vertical spin-valves (SVs) with the GaAs layer o

90 ed with spin transport at the interfacial Fe/GaAs Schottky contacts and in the GaAs membranes, where

91 In the case of the Fe/GaAs/GaMnAs multilayer, hystereses are clearly observed

92 ation alignment in magnetic layers in the Fe/GaAs/GaMnAs structure by current-induced spin-orbit (SO)

93 by Au, Ag and Al nanostructures on thin-film GaAs devices we reveal that parasitic losses can be miti

94 specifically designed for on-chip thin-film GaAs waveguides is presented serving as a flexible analy

95 Thin-film GaAs waveguides were designed and fabricated by molecula

96 work, the H(+) energy and fluence chosen for GaAs implantation are similar to that of protons origina

97 nsiderably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields Del

98 putational modeling, we demonstrate that for GaAs(111)A QDs, we can continually increase WL thickness

99 Here, we use strain-free GaAs/AlGaAs QDs, demonstrating a fully functioning two-q

100 on of a single dislocation in a freestanding GaAs/In0.2Ga0.8As/GaAs membrane by synchrotron X-ray mic

101 d excitonic absorption features arising from GaAs quantum wires are detected, allowing extraction of

102 power (24 mW) and speed (in terahertz) from GaAs optical emitters using deep-level transitions.

103 Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of ne

104 wall in a perpendicularly magnetized GaMnAsP/GaAs ferromagnetic semiconductor and demonstrate devices

105 investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine

106 We grew GaAs solar cell devices by incorporating the high growth

107 Epitaxially grown GaAs slab waveguides serve as optical transducer for tai

108 nd harmonic generation in a single hexagonal GaAs nanowire.

109 P 12 profile in non-annealed H(+) implanted GaAs obtained from the analysis of the time-domain Brill

110 quantum wells (QWs) periodically arranged in GaAs matrix.

111 hen light circulates about the 4 axis, as in GaAs whispering-gallery-mode microdisks, it encounters e

112 istics are exploited to replace gold (Au) in GaAs photodetectors.

113 ned acoustic phonon polarization branches in GaAs nanowires with a diameter as large as 128 nm, at a

114 oping sites analogous to DX or AX centers in GaAs.

115 trate that nitrogen isoelectronic centres in GaAs combine both the uniformity and predictability of a

116 e a robust mode for electrical conduction in GaAs quantum point contacts, driven into extreme non-equ

117 lve a controversy on hot electron cooling in GaAs.

118 system, despite weak spin-orbit coupling in GaAs.

119 close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional elec

120 crucial for annealing structural defects in GaAs nanocrystals.

121 l Hanle measurement has been demonstrated in GaAs at room temperature.

122 coherent phonon excitation and detection in GaAs using ultrafast THz-pump/optical-probe scheme.

123 Si3N4 waveguides and single-quantum dots in GaAs geometries, with performance approaching that of de

124 These results for carrier dynamics in GaAs(110) suggest strong carrier-carrier scatterings whi

125 ng enhancement of luminescence efficiency in GaAs grown on this virtual substrate.

126 ve microscopic insight into hot electrons in GaAs and enables accurate ab initio computation of hot c

127 xcitons in a MoSe2 monolayer and excitons in GaAs quantum wells via coupling to a cavity resonance.

128 coherence, as seen in recent experiments in GaAs-based quantum dots.

129 s of electron density and electric fields in GaAs semiconductor devices are displayed with NMR experi

130 igh-mobility two-dimensional electron gas in GaAs-AlGaAs heterostructures.

131 ts of a quasi-two-dimensional exciton gas in GaAs/AlGaAs coupled quantum wells and the observation of

132 he emergence of the persistent spin helix in GaAs quantum wells by independently tuning alpha and bet

133 onator design, although demonstrated here in GaAs-InAs microdisk laser, should be applicable to any l

134 Mn acceptors, which are mediated by holes in GaAs.

135 Formula: see text] state first identified in GaAs.

136 two low-lying states of donor impurities in GaAs.

137 rst, the electric field of a p-n junction in GaAs is imaged.

138 rs of magnitude over similar measurements in GaAs-based quantum dots.

139 accurately predict the electron mobility in GaAs from first principles.

140 le antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam li

141 excitons and unbound electron-hole pairs in GaAs quantum wells.

142 Here we measure the nuclear polarization in GaAs/AlGaAs quantum dots with high accuracy using a new

143 on times are comparable to those reported in GaAs.

144 uggesting realistic experimental settings in GaAs and transition metal dichalcogenide (TMD) bilayer D

145 m of about 30 THz, 100 times broader than in GaAs.

146 rder 1 mueV, almost one order larger than in GaAs/GaAlAs QDs.

147 n splittings are expected to exceed those in GaAs when the D'yakonov-Perel' spin relaxation mechanism

148 tude longer than the intrinsic timescales in GaAs quantum dots, whereas gate operation times are comp

149 change by a factor of 40 is unprecedented in GaAs and the highest value achieved is comparable to tha

150 its at 1.5 microm fibre-optic wavelengths in GaAs using optical transitions from arsenic antisite (As

151 Working in GaAs facilitates manipulation of the localized mechanica

152 al ordering of arrays of self-assembled InAs-GaAs quantum dots (QDs) has been quantified as a functio

153 cessful fabrication and operation of an InAs/GaAs quantum dot based intermediate band solar cell conc

154 and cavities containing self-assembled InAs/GaAs quantum dots-a mature class of solid-state quantum

155 Self-assembled, epitaxially grown InAs/GaAs quantum dots (QDs) are promising semiconductor quan

156 The integration of InAs/GaAs quantum dots into nanophotonic cavities has led to

157 of the optical nonlinear properties of InAs/GaAs quantum dots, specifically the associated two-photo

158 The optically pumped InAs/GaAs quantum-dot PC lasers exhibit single-mode operation

159 ization-entangled photons from a single InAs/GaAs quantum dot over a metropolitan network fiber.

160 Among them, InAs/GaAs quantum dots have shown great potential for applica

161 e, crystalline III-V nanocrystals, including GaAs, InAs, GaP, and InP.

162 nually increase WL thickness with increasing GaAs deposition, even after the tensile-strained QDs (TS

163 oherence in individual self-assembled InGaAs/GaAs quantum dots: spin-echo coherence times in the rang

164 brane electrolysers in series with one InGaP/GaAs/GaInNAsSb triple-junction solar cell, which produce

165 gy to low-energy states in a type-II 2D InSe/GaAs heterostructure.

166 ace region of single-crystal semi-insulating GaAs that has been coated and passivated with an aluminu

167 al unit cell is presented with an integrated GaAs air-bridged Schottky diode to produce a dynamically

168 e spacings with the spacings of an intrinsic GaAs(001) surface lattice.

169 as a function of distance from an irradiated GaAs surface.

170 Using an isolated GaAs double quantum dot defined by electrostatic gates a

171 Mice were administered i.p. 200 mg/kg GaAs crystals or latex beads, or vehicle.

172 er dynamics in the quantum dot-wetting layer-GaAs system.

173 als covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN

174 ns much slower compared with lattice-matched GaAs/AlGaAs structures.

175 duction band structure of the host material (GaAs).

176 xciton resonances measured for 15 few-micron GaAs crystal slabs with different values of N, reveal a

177 GaAs structure in a depth profile of a MnAs/GaAs heterojunction.

178 e power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide fr

179 erved magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system.

180 around zero magnetic field in high mobility GaAs/AlGaAs 2DES (~10(7) cm(2)/Vs) is experimentally exa

181 standard value, even in these high mobility GaAs/AlGaAs devices, at very large filling factors.

182 resistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron sys

183 in a surprising setting: ultrahigh-mobility GaAs/AlGaAs heterostructures that contain a 2DES exhibit

184 ], comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been impla

185 Moreover, GaAs hyperfine material constants are measured here expe

186 lds acting upon electron spin-system of an n-GaAs layer in a high-Q microcavity probed by ellipticall

187 ling factor (nu) close to nu = 1 in a narrow GaAs quantum well.

188 for supertetrahedra based on charge-neutral GaAs or InAs.

189 thography techniques on a conventional 15 nm GaAs quantum well, we demonstrate acoustically-driven ge

190 proposed that the formation and breakage of GaAs-O-Si bonding bridges are responsible for the remova

191 irradiation on photoelastic coefficients of GaAs is of primary importance to space applied optoelect

192 bute 50% of the bulk thermal conductivity of GaAs, GaN, AlN, and 4H-SiC near room temperature.

193 Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial

194 we demonstrate heteroepitaxial deposition of GaAs thin-films on large-grained, single-crystal-like, b

195 s are positioned in proximity to the edge of GaAs valence band, to the sequence of a peptide that bin

196 hese challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial asse

197 incorporating Bi suppresses the formation of GaAs-like electron traps, thus reducing the total trap c

198 of an acceptor state within the band gap of GaAs.

199 the predictions with homoepitaxial growth of GaAs(001) on GaAs(001) substrates through monolayer grap

200 , we obtain cavity mediated hybridization of GaAs and J-aggregate excitons in the strong coupling reg

201 plementation, allowing direct integration of GaAs waveguides and cavities containing self-assembled I

202 and the nucleation site of each new layer of GaAs.

203 uperlattices consisting of 2 to 21 layers of GaAs and GaP have been prepared.

204 geometries can be created in nanoribbons of GaAs and Si in this manner and that these configurations

205 defects influence photoelastic properties of GaAs.

206 ces by incorporating the high growth rate of GaAs and evaluated its material quality at these high ra

207 g bridges are responsible for the removal of GaAs material during the sliding process.

208 o probe the phonon mean free path spectra of GaAs, GaN, AlN, and 4H-SiC at temperatures near 80 K, 15

209 ge PL, indicating that the surface states of GaAs nanocrystals were effectively passivated by this tw

210 etry in the zinc-blende crystal structure of GaAs however, results in a strong piezoelectric interact

211 The performance and versatility of GaAs/AlGaAs thin-film waveguide technology in combinatio

212 ns with homoepitaxial growth of GaAs(001) on GaAs(001) substrates through monolayer graphene, and sho

213 chip-integrated solid-state devices based on GaAs/AlGaAs technology waveguide fabricated via conventi

214 n epsilon-phase of 2D GaSe grown directly on GaAs can be transformed into the beta-phase by introduci

215 red nucleation positions for quantum dots on GaAs surfaces.

216 ntum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique.

217 nanostructures can be directly fabricated on GaAs surfaces by sliding a SiO2 microsphere under an ult

218 rsion curves of a 50 nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon co

219 MnAs epitaxial thin films on GaAs(001) single crystalline substrates crystallize at r

220 As1-x Bi x having 0 </= x </= 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature

221 Epitaxial InAs quantum dots grown on GaAs substrate are being used in several applications ra

222 the two-dimensional GaSe materials grown on GaAs(001) substrates by molecular beam epitaxy reveal a

223 erials that have a large lattice mismatch on GaAs.

224 or nondestructive surface nanofabrication on GaAs.

225 solution self-assembly of octadecanethiol on GaAs (001) at ambient temperature.

226 d molecules show that the octadecanethiol on GaAs(001) monolayers undergo exchange with solute thiol

227 magneto-transport measurements performed on GaAs/AlGaAs high purity Hall bars with two inner contact

228 optical quality 1.55 microm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and t

229 ion procedure to passivate surface states on GaAs nanocrystals.

230 ene electrodes from aqueous suspensions onto GaAs patterned with a photoresist and lifted off with ac

231 globin sensing array based on hybrid organic GaAs-based devices, which can remain in biological solut

232 ssisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates.

233 nlike in the case of the massive, parabolic, GaAs/AlGaAs 2D electron system, where the radiation-indu

234 luminescence (PL) emission of photocorroding GaAs/AlGaAs quantum well (QW) biochips.

235 ectional operation compared to the prevalent GaAs/Al0.15Ga0.85As material system.

236 The results show that the proposed GaAs-based metasurface on-chip antenna is viable for app

237 e electron spin dynamics in optically pumped GaAs microdisc lasers with quantum wells and interface-f

238 sional electron gas hosted by a high-quality GaAs quantum well.

239 owth onto the cleaved edge of a high-quality GaAs/AlGaAs heterostructure.

240 nd hydrophobic ambient surface, and direct S-GaAs attachment.

241 trate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattic

242 nonlinear spectral characteristics of short GaAs quantum wires by tunnelling spectroscopy, using an

243 ers into ordinary semiconductors such as Si, GaAs, and ZnO was the enabling step in the electronic an

244 ic molecules on three material surfaces: Si, GaAs, and Pd.

245 Here, spin diffusion in a single GaAs/AlGaAs quantum dot is witnessed in the most direct

246 ordering of liquid Ga in contact with solid GaAs in a nanowire growth configuration.

247 Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In(0.52)Al(0.48

248 In contrast to the well-studied GaAs(1-x)Bi(x) alloy(,) in GaP(1-x)Bi(x) substitutional

249 In the widely studied GaAs-based system, the composite fermion picture is thou

250 At room temperature, GaAs Schottky barrier diodes remain the leading technolo

251 Cl-terminated GaAs nanocrystals have been produced by anisotropic etch

252 The Cl-terminated GaAs nanocrystals were then functionalized by reaction w

253 erature, one order of magnitude smaller than GaAs.

254 rmation under a 4 nm groove, confirming that GaAs can be removed without destruction.

255 The GaAs quantum wire and well band gaps scale according to

256 strain based on lattice mismatch between the GaAs and ALD-deposited aluminum oxide due to their diffe

257 observation of Mn-induced states between the GaAs valence-band maximum and the Fermi level, centred a

258 o improve the optical properties of both the GaAs and ZnSe layers on either side of the interface.

259 minescence intensity is observed on both the GaAs substrate and the wetting layer by two-photon excit

260 yer, leaving long-lived spins trapped in the GaAs layer.

261 rfacial Fe/GaAs Schottky contacts and in the GaAs membranes, where balance between the barrier profil

262 oresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed co

263 more similar to the results observed in the GaAs/AlGaAs 2D system.

264 -induced, electronic-state-transition in the GaAs/AlGaAs 2DES.

265 tions that disrupt the cubic symmetry of the GaAs lattice, resulting in quadrupolar satellites for nu

266 r patches fabricated on the top layer of the GaAs substrate and metallic via-holes implemented in the

267 crowave photo-excited transport study of the GaAs/AlGaAs 2 dimensional electron system (2DES).

268 ric charge immobilized on the surface of the GaAs/AlGaAs biochips.

269 series of structures we demonstrate that the GaAs/AlGaAs interface can provide superior spin-transpor

270 Unfortunately, the GaAs bandgap wavelength (0.85 microm) is far too short f

271 n STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn int

272 /GaAs/Fe vertical spin-valves (SVs) with the GaAs layer of 50 nanometers thick and top and bottom Fe

273 Therefore, GaAs exposure differentially modulated cathepsin activit

274 ile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known

275 ductor (UMS) PH25 process on a 100 mum thick GaAs substrate and measurements of various concentration

276 xides and dissolution of a limited thickness GaAs cap material (</=10nm) that results in the appearan

277 ere how an X-ray pump beam transforms a thin GaAs specimen from a strong absorber into a nearly trans

278 ed spin-polarized electrons drifting through GaAs Hall bars.

279 gradient diffusion barrier does not apply to GaAs epitaxial quantum dots.

280 , to the sequence of a peptide that binds to GaAs (100) results in changes of both the electron affin

281 n sound speed of 4155 m s(-1), comparable to GaAs, but single crystals show very low lattice thermal

282 Nevertheless, compared to GaAs and monocrystalline silicon PV, perovskite cells ha

283 by over two orders of magnitude compared to GaAs grown under the same conditions.

284 The phenotype of PEC directly exposed to GaAs mirrored cytokine-activated macrophages, in contras

285 optic components that are lattice-matched to GaAs integrated circuits.

286 We apply our method to GaAs, a weakly polar semiconductor with dominant optical

287 Se3 film van der Waals bound to a Se-treated GaAs substrate.

288 integrable electron focusing lens in n-type GaAs.

289 D channel in a series of low disorder p-type GaAs quantum point contacts, where spin-orbit and hole-h

290 bonds that help to passivate the underlying GaAs layer.

291 We demonstrate that in an undoped GaAs/AlGaAs layer, spins are detected at distances reach

292 a(0.97)Mn(0.03)As, and the reference undoped GaAs.

293 These compounds constitute hitherto unknown GaAs- or InAs-based supertetrahedral structures and repr

294 ove the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times whil

295 ions that are not present in the unpatterned GaAs quantum well.

296 15 % for light-driven water splitting using GaAs solar cells.

297 A three-well design scheme with shallow-well GaAs/Al0.10Ga0.90As superlattices is developed to achiev

298 Here we report NLMRs in non-Weyl GaAs quantum wells.

299 n we investigate a (001)-oriented GaAs1-xBix/GaAs structure possessing Bi surface droplets capable of

300 Using ZnSe/GaAs as a model system, we explore the use of ultraviole