ライフサイエンスコーパス: Ge

1 Ge doping (3 mol %) in SnSe nanoplates significantly enh

2 Ge et al. now show that skin tumors exhibit merged chrom

3 Ge-Sb-Te alloys have been widely used in optical/electri

4 typal superionic lithium-ion conductor Li(10)Ge(1-x)Sn(x)P(2)S(12).

5 High mobility Si(0.15) Ge(0.85) film on sapphire was grown at 890 degrees C sub

6 substrate temperature, high mobility Si(0.15)Ge(0.85) film with continues morphology and 99.7% majori

7 The hall electron mobilities of the Si(0.15)Ge(0.85) grown at 500 degrees C are 456 cm(2)V(-1)s(-1)

8 doped with Ge to concentrations from 10(16) Ge atoms/cm(3) to 10(18) Ge atoms/cm(3).

9 H18(-) or as a large hypho-deltahedron of 18 Ge-atoms with a triangle of Pd3 inside, i.e., [Pd3@Ge18(

10 rations from 10(16) Ge atoms/cm(3) to 10(18) Ge atoms/cm(3).

11 yers, such as 1T-TaS(2) , CrI(3) , and Cr(2) Ge(2) Te(6) , is reviewed.

12 a semiconducting 2D ferromagnet, i.e., Cr(2) Ge(2) Te(6) , is studied using the anomalous Hall effect

13 itch the out-of-plane magnetization of Cr(2) Ge(2) Te(6) .

14 ied using the anomalous Hall effect in Cr(2) Ge(2) Te(6) /tantalum heterostructures.

15 red for spin-orbit torque switching of Cr(2) Ge(2) Te(6) are about two orders of magnitude lower than

16 1.94 mW m(-1) K(-2) at 700 K in Cu(26) Cr(2) Ge(6) S(32) .

17 n for Cr in synthetic colusite, Cu(26) Cr(2) Ge(6) S(32) .

18 helices [(CH(3))(2)](infinity)Si, [(CH(3))(2)Ge](infinity), [(CH(3))(2)Sn](infinity), and [(CH(3))(2)

19 cking up atomic layers of ferromagnetic Cr(2)Ge(2)Te(6) and ferroelectric In(2)Se(3), thereby leading

20 rses its polarization, the magnetism of Cr(2)Ge(2)Te(6) is switched, and correspondingly In(2)Se(3) b

21 um core and a peculiar bonding mode of sp(2)-Ge@(PdPPh(3))(3) trigonal planar structure, whereas the

22 rdinate germanium cation [(IDipp){(Me3Si)2CH}Ge:](+) has been synthesized, which lacks pi-donor stabi

23 form the corresponding mono- and bis-AlBr(3) Ge -> Al Lewis adducts [Si(II)(Xant)Si(II)]Ge(AlBr(3)) 4

24 3+), Cd(2+), Cu(2+), Zn(2+), Sn(2+), In(3+), Ge(4+), and Fe(3+).

25 ectrons (one sigma-type lone-pair and one 3p(Ge) lone-pair) on the zerovalent Ge atom.

26 r(2)C(6)H(3)) containing a 6pai-electron C(4)Ge(2) framework has been isolated as a red crystalline s

27 of an alkane-soluble Zintl cluster, [eta(4)-Ge(9)(Hyp)(3)]Rh(COD), that can catalytically hydrogenat

28 work, we introduce the [K(2,2,2-crypt)](4){(Ge(9))(2)[eta(6)-Ge(PdPPh(3))(3)]} complex that contains

29 nic cesium tin-germanium triiodide (CsSn(0.5)Ge(0.5)I(3)) solid-solution perovskite as the light abso

30 igh spin polarization at the Co2FeSi0.5Al0.5/Ge interface, hence can be used as a model to study spin

31 ral clusters, [Zn(6) Ge(16) ](4-) and [Cd(6) Ge(16) ](4-) , were directly self-assembled through high

32 e a very large HOMO-LUMO energy gap in [M(6) Ge(16) ](4-) (2.22 eV), suggesting high kinetic stabilit

33 rometallic supertetrahedral clusters, [Zn(6) Ge(16) ](4-) and [Cd(6) Ge(16) ](4-) , were directly sel

34 ure ferromagnetic Kondo lattice(9,10) CeRh(6)Ge(4) becomes a strange metal at a pressure-induced QCP.

35 ce the [K(2,2,2-crypt)](4){(Ge(9))(2)[eta(6)-Ge(PdPPh(3))(3)]} complex that contains a heterometallic

36 Quantitation stability of a (68)Ge flood phantom was demonstrated within 0.34%.

37 Scatter fraction measured with a (68)Ge line source in the scatter phantom was stable within

38 pH range, enabling direct elution from a (68)Ge/(68)Ga generator into a lyophilized radiopharmaceutic

39 )Ga, available on a regular basis from a (68)Ge/(68)Ga generator, is an attractive choice.

40 ions, whereas (68)Ga was obtained from a (68)Ge/(68)Ga generator.

41 r averaged 80% (range, 72.0%-95.1%), and (68)Ge breakthrough was less than 0.006%, initially decreasi

42 d relative response ratios for (18)F and (68)Ge by -3.7%, allowing users of the commercial mock syrin

43 The GMP-certified (68)Ge/(68)Ga generator system was studied for a year.

44 A good-manufacturing-practices (GMP) (68)Ge/(68)Ga generator that uses modified dodecyl-3,4,5-tri

45 ed using a kit procedure with a licensed (68)Ge/(68)Ga generator.

46 me to 0.001% (expressed as percentage of (68)Ge activity present in the generator at the time of elut

47 The radionuclidic ((68)Ge) impurity was 0.00001% or less (under the detection l

48 A 2,040-MBq self-shielded (68)Ge/(68)Ga generator provided metal-free (68)GaCl3 ready

49 rces, identical in geometry to the solid (68)Ge epoxy calibration source currently on the market, wer

50 The results allow the (68)Ge activity of the mock syringe source to be expressed i

51 The (68)Ge levels in the final drug products were under the dete

52 lfide-based superionic conductor Li(4) Cu(8) Ge(3) S(12) with superior stability was developed based

53 The endohedral He/Li@F(8)@Ge(60)F(52) cages are significantly more stable than the

54 he energy of formation of endohedral He@F(8)@Ge(60)F(52) is exothermic by -10.4 kcal mol(-1), while C

55 onic thermoelectric generators using Si(0.97)Ge(0.03), made by standard Si processing, with high volt

56 with tetrachloro-o-benzoquinone to afford a Ge(IV) adduct.

57 To demonstrate the concept, a Ge segment is inserted between the Au and Fe3O4 domains

58 st energetically favourable E-centres have a Ge atom as a nearest neighbour, whereas the dependence o

59 e Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing

60 spectrum, consistent with the formation of a Ge-C bond.

61 udy of a sputtered thin film Ag cathode on a Ge ATR crystal in CO(2)-saturated 0.1 M KHCO(3) over a r

62 cubic symmetry in the Fe film deposited on a Ge buffer is surprising, and we discuss possible reason

63 Herein, we report a Ge-recycling strategy for the topotactic conversion betw

64 est occupied molecular orbital (HOMO)-with a Ge-centred lone pair as the HOMO-1.

65 trate that the structured phase-change alloy Ge(2)Sb(2)Te(5) (GST) can support a diverse set of multi

66 dels of the prototypical phase-change alloy, Ge(2)Sb(2)Te(5), to obtain reliable statistics.

67 The optimized alloy, Ge(2)Sb(2)Se(4)Te(1), combines broadband transparency (1

68 -change materials Ag(4)In(3)Sb(67)Te(26) and Ge(15)Sb(85) at 660 and 610 kelvin, respectively.

69 harmonicity, nanoscale grain boundaries, and Ge precipitates in the SnSe matrix synergistically give

70 form-diameter Si cores, Ge onto Ge cores and Ge onto Si cores can generate diameter-modulated core-sh

71 In the case of Sn(II) and Ge(II), both singlet and triplet excitonic emission band

72 erest, including Ag(I), In(III), Ge(II), and Ge(IV), either have low solubility (requiring dilute ink

73 Cu, Mn and Ge influencing antioxidant activity were determined toge

74 d electronic properties of partial C, Si and Ge decorated graphene were investigated by first-princip

75 For composites with Si and Ge microinclusions we obtain reflectance efficiencies of

76 conductor quantum dots, especially on Si and Ge nanocrystals.

77 rsification of the bulk properties of Si and Ge, in complete agreement with the available experimenta

78 ectral regions for bromides (for Pb, Sn, and Ge, respectively) and extends into the near-infrared for

79 Ge x alloys as a function of temperature and Ge concentration can be described by the cBOmega thermod

80 omplementary experiments yielding Si-TPP and Ge-TPP on Ag(111) highlight the applicability to differe

81 t individual defects in crystalline WSe2 and Ge.

82 between the planar fragment and the aromatic Ge(9) ligands is provided by six 2c-2e Pd-Ge sigma-bonds

83 s react with nucleophiles, resulting in aryl-Ge or Me-Ge nucleophile-assisted fragmentations.

84 Current O-PCMs, such as Ge-Sb-Te (GST), exhibit large contrast of both refractiv

85 domains of Au-Fe3O4 heterodimers to form Au-Ge-Fe3O4 heterotrimers.

86 s, including identification of a proposed Au-Ge-Au-Fe3O4 intermediate.

87 ne complex 6, possessing a heteroallylic B...Ge...Si pai-conjugation.

88 rication of uniform diameter, direct bandgap Ge(1-x)Sn(x) alloy nanowires, with a Sn incorporation up

89 chmark the behavior of the less well behaved Ge-germanide interfaces for this purpose.

90 As target we use a cylindrically bent Ge crystal in Laue transmission geometry.

91 The Br-Ge(111) surface was methylated by reaction with (CH3)2Mg

92 of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-up growth pa

93 2, whose charges are differently affected by Ge and Ti occupation of octahedra.

94 Subvalent doping by Ge on the Nb site is thermodynamically favourable proces

95 over 20 times more conductive than the Ge-C-Ge sequence.

96 on increases conductance: for example, the C-Ge-C sequence is over 20 times more conductive than the

97 In this issue of Cancer Cell, Ge et al. show that overexpression of the oncoprotein iA

98 Atomic-force micrographs of CH3-Ge(111) surfaces indicated that the surface remained ato

99 oximately 400 degrees C of the surficial CH3-Ge(111) groups.

100 ectly self-assembled through highly-charged [Ge(4) ](4-) units and transition metal cations, in which

101 sized by salt-metathesis reaction of [L2 (Cl)Ge:] 1 with sodium phosphaethynolate [(dioxane)n NaOCP].

102 alised interface structure, terminated by Co-Ge bonds, preserves the high spin polarization at the Co

103 ed phosphorous selenide glass of composition Ge(2.8)P(57.7)Se(39.5) is determined as a function of pr

104 data from SIMS analysis also show consistent Ge doping concentration throughout the depth of the GaN

105 toluminescence enhancement in low Sn content Ge(0.94)Sn(0.06) layers by implementing tensile strain.

106 5-coordinated Ge atoms are the local defective bonding environments ma

107 e sigma-bonds attaching Pd atoms to the core Ge atom, while the binding between the planar fragment a

108 epositing Si onto uniform-diameter Si cores, Ge onto Ge cores and Ge onto Si cores can generate diame

109 conduction at crystalline Si and crystalline Ge interfaces and found that more than 15% of the interf

110 The material features a rigid Cu-Ge-S open framework that increases its stability.

111 The cyclic Ge(I) compound [(ADC(Ph))Ge](2) (4) (ADC(Ph) = {CN(Dipp)

112 In comparison with InGaAs/InP devices, Ge-on-Si SPADs exhibit considerably reduced afterpulsing

113 rt channels within the quasi-one-dimensional Ge dimer rows in the surface gives rise to two distinct

114 3}3PR2] (R: Cy (1), (i)Pr (2)) with discrete Ge-P exo bonds.

115 energies calculated for tetravalent dopants (Ge(4+) and Si(4+)) on the Ti site suggest the necessity

116 rylene-phosphinidenes (Mes)TerEP(IDipp) (E = Ge, Sn; (Mes)Ter = 2,6-Mes(2)C(6)H(3), IDipp = C([N-(2,6

117 nanocages which utilize the heavier element Ge.

118 n methods, polycrystalline films with excess Ge were frequently obtained.

119 ound to increase the reactivities of the Fe, Ge, and S precursors, and we discuss possible metal-amid

120 Herein we explore the Fe-Ge-S reaction landscape and the role of the base.

121 e cations, base, and amine as well as the Fe:Ge:S molar ratios.

122 a Zintl phase and thus represents the first Ge=Ge double bond under such conditions, as also suggest

123 itted by the sample are dispersed by a fixed Ge(111) analyzer crystal over the active area of an ener

124 assisted NP syntheses and were necessary for Ge incorporation.

125 nomena described in this Tutorial Review for Ge/Si should be relevant for other lattice-mismatched he

126 n unusual heteroatomic metal planar fragment Ge@Pd(3).

127 The integration of dislocation-free Ge nano-islands was realized via selective molecular bea

128 Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention as direct b

129 Deposition of epitaxial germanium (Ge) thin films on silicon (Si) wafers has been achieved

130 l resistance by depositing a thin germanium (Ge) (20 nm) layer on garnet.

131 is work, Mg was microalloyed with germanium (Ge), with the aim of improving corrosion resistance by r

132 ve shown that C-H, N-H, B-H, O-H, S-H, Si-H, Ge-H, Sn-H and P-H insertion reactions are feasible with

133 ed, including K(i), Al(iii), Zn(ii), Sn(ii), Ge(ii), and Si(ii/iv).

134 complex ("germylone") 3, [Si(II)(Xant)Si(II)]Ge(0), stabilized by a chelating bis(N-heterocyclic sily

135 ) Ge -> Al Lewis adducts [Si(II)(Xant)Si(II)]Ge(AlBr(3)) 4 and [Si(II)(Xant)Si(II)]Ge(AlBr(3))(2) 5,

136 Si(II)]Ge(AlBr(3)) 4 and [Si(II)(Xant)Si(II)]Ge(AlBr(3))(2) 5, respectively.

137 ooctadiene), the unique {[Si(II)(Xant)Si(II)]Ge(I)}(2)Ni(II) complex with a three-membered ring Ge(2)

138 ecies of interest, including Ag(I), In(III), Ge(II), and Ge(IV), either have low solubility (requirin

139 n which 3-center-2-electron sigma bonding in Ge(2) Zn or Ge(2) Cd triangles plays a vital role in the

140 The formation of radiation damage in Ge above room temperature is dominated by complex dynami

141 e study the dynamics of radiation defects in Ge in the temperature range of 100-160 degrees C under p

142 ent that can be traced with the red shift in Ge K edge energy which is also identified by the princip

143 lysts permitted a greater inclusion of Sn in Ge nanowires compared with conventional Au catalysts, wh

144 (PL) attributed to emission from individual Ge nanocrystals (nc-Ge) spatially resolved using micro-p

145 These results, utilising the inexpensive Ge-on-Si platform, provide a route towards large arrays

146 unterpart due to the prevalence of intrinsic Ge vacancies.

147 acyclic two-coordinate dioxysilylene and its Ge, Sn, and Pb congeners, thereby presenting the first c

148 of GeSe displays a boat conformation for its Ge-Se six-membered ring ("six-ring"), while the previous

149 roles of the trans-geometry of the [H-Pd(L)-Ge] complex, as well as of the steric requirements of th

150 -digermylium-2,4-diphosphacyclobutadiene [L2 Ge(mu-P)2 GeL2 ] 4 and bis(germyliumylidenyl)-substitute

151 myliumylidenyl)-substituted diphosphene [(L2 Ge-P=P-GeL2 )] 5 could also be obtained in moderate yiel

152 the entire PCO group, the unprecedented [L2 Ge-GeL2 ] complex 3 in 54 % yields bearing the Ge2(2+) i

153 ow-density silica layers connected by labile Ge-rich units into material with new topology.

154 le than their parent exohedral isomers He/Li@Ge(60)F(52) by -182.46 and -49.22 kcal mol(-1), respecti

155 tting at the interface between the lithiated Ge layer and garnet.

156 aps assisted electronic transition and local Ge-Ge chain growth as well as locally enhanced bond alig

157 lloys vary greatly with respect to the local Ge concentration and the composition of the alloy.

158 ive mass, and with a broad tail of localized Ge-Ge sigma* states below this band edge.

159 6)H(3)-2,6-(C(6)H(2)-2,4,6-Pr(i)(3))(2); M = Ge, Sn, or Pb) under mild conditions (<=80 degrees C, 1

160 ; A' = ammonium cation acting as spacer; M = Ge(2+), Sn(2+), Pb(2+); and X = Cl(-), Br(-), I(-)] have

161 omprising the low-loss phase change material Ge(3)Sb(2)Te(6).

162 ith nucleophiles, resulting in aryl-Ge or Me-Ge nucleophile-assisted fragmentations.

163 dominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to

164 n be used to design lower SBH contacts for n-Ge, which are needed technologically.

165 emission from individual Ge nanocrystals (nc-Ge) spatially resolved using micro-photoluminescence and

166 stics and we argue that the spread of the nc-Ge peaks in the PL spectrum is due to different confinem

167 With the addition of Ge, cathodic activation of Mg subject to cyclic polarisa

168 The most recent advances in the area of Ge-based nanocomposite electrode materials and electroly

169 we report isostructural halide complexes of Ge(II), Sn(II), and Pb(II) with a 1-butyl-1-methyl-piper

170 modynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely sh

171 family of phase-change materials consists of Ge-Sb-Te alloys.

172 us GeSe(2-x) the conduction band consists of Ge-Se sigma*states with a low effective mass, and with a

173 Depletion of Ge from the interfacial layer (IL) by enhancement of vol

174 tion experiment, revealing the desorption of Ge-TPP.

175 We use strain to increase the diffusivity of Ge and Te atoms that are confined to 5 A thick 2D planes

176 st observed, further verifying the doping of Ge into BP and the formation of the PGex alloy.

177 electrics and also promotes the formation of Ge vacancies to provide enough carriers for electrical t

178 n and bottom-up self-assembly, the growth of Ge wires on prepatterned Si (001) substrates with contro

179 Measurements of crystallization kinetics of Ge(2) Sb(2) Te(5) with heating rates spanning over six o

180 The limitations of Ge-based materials for energy-storage applications are d

181 .1 at 873 K in two-dimensional nanoplates of Ge-doped SnSe synthesized by a simple hydrothermal route

182 eveals that there is a small outdiffusion of Ge into specific atomic planes of the Co2FeSi0.5Al0.5 fi

183 We investigated the optical properties of Ge nanocrystals surrounded by Ge3N4.

184 we introduce a new class of O-PCMs based on Ge-Sb-Se-Te (GSST) which breaks this traditional couplin

185 Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applicatio

186 ic direction in crystalline Fe film grown on Ge buffers deposited on a (001) GaAs substrate.

187 g Si onto uniform-diameter Si cores, Ge onto Ge cores and Ge onto Si cores can generate diameter-modu

188 nanowire containing a delta-layer (X is C or Ge).

189 ) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of

190 porous Pt anode and the deposition of Si or Ge under bias at the cathode from chloride-based gaseous

191 alpha-beta-alpha chain composed of C, Si, or Ge atoms.

192 nter-2-electron sigma bonding in Ge(2) Zn or Ge(2) Cd triangles plays a vital role in the stabilizati

193 phosphaketenyl germyliumylidene [(L2 (O=C=P)Ge:] 2 (L2 =(p-tolyl)2 B[1-(1-adamantyl)-3-yl-2-ylidene]

194 A signal of P-Ge bond is first observed, further verifying the doping

195 ascinating compounds containing P-C, P-Si, P-Ge, and P-P bonds using a single step with a base-stabil

196 ic Ge(9) ligands is provided by six 2c-2e Pd-Ge sigma-bonds and two delocalized 4c-2e sigma-bonds.

197 e planar fragment consists of three 2c-2e Pd-Ge sigma-bonds attaching Pd atoms to the core Ge atom, w

198 The cyclic Ge(I) compound [(ADC(Ph))Ge](2) (4) (ADC(Ph) = {CN(Dipp)}(2)CPh, Dipp = 2,6-iPr(2

199 ied to access the analogous addition product Ge-Au-Fe3O4, allowing tuning between two distinct hetero

200 High quality Ge doping of GaN is demonstrated using primarily thermal

201 Such well-ordered high quality Ge islands present a step towards the achievement of mat

202 ds large arrays of efficient, high data rate Ge-on-Si SPADs for use in eye-safe automotive LIDAR and

203 e a ultra-low dislocation density, epi-ready Ge/Si virtual substrate on a wafer scale, using a highly

204 nts and first-principles calculations reveal Ge pyramid-dominated network and high density of near-va

205 (2)Ni(II) complex with a three-membered ring Ge(2)Ni-metallacycle was obtained via reductive coupling

206 bottom-up synthesized layered semiconductor (Ge(1-) (x) Sn(x) S) nanoribbons with an axial twist and

207 2](4-) unit is characterized by the shortest Ge-Ge distance (2.390(1) A) ever observed in a Zintl pha

208 f the periodic table, including Group 14 Si, Ge, Sn, and Pb.

209 ) to conventional semiconductors such as Si, Ge and GaAs.

210 ermal and photobehavior of XH2OO (X = C, Si, Ge, and Sn) that serve as precursors for dioxiranes, an

211 conversion of E-Cl to E-H bonds (E = C, Si, Ge, P) was best achieved by using Na(2)[4].

212 ing functionalized E=E multiple bonds (E=Si, Ge, Sn, Pb) because of their potential to exhibit novel

213 y of materials (WHM with W = Zr, Hf; H = Si, Ge, Sn; M = O, S, Se, Te) with identical band topology.

214 ions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tail

215 nor character once the reagent R3MH (M = Si, Ge, Sn) enters the ligand sphere.

216 ions of internal alkynes with R3M-H (M = Si, Ge, Sn) follow an unconventional trans-addition mode in

217 d solutions Li(6+x)M(x)Sb(1-x)S(5)I (M = Si, Ge, Sn), that exhibit superionic conductivity.

218 tural analogues XM(YCH(2)CH(2))(3)N (M = Si, Ge, Sn, Pb, Ti, Al, Cr, Fe, Ni...; Y = O, NR, CH(2), S),

219 tal group IV compounds (carbon nanodots, Si, Ge), III-V compounds (e.g., InP, InAs), and binary and m

220 germanene and stanene (2D allotropes of Si, Ge, and Sn), lends itself as a platform to probe Dirac-l

221 The wide Si, Ge and Sn transparencies allow the use of binary and ter

222 agnetic half-metal compounds Co2TiX (X = Si, Ge, or Sn) with Curie temperatures higher than 350 K.

223 ional (2D) crystals termed 2D-Xenes (X = Si, Ge, Sn and so on) which, together with their ligand-func

224 which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si na

225 rged-group IV colour centres-namely the Si-, Ge-, Sn- and Pb-vacancies.

226 reactivity of POVs functionalised with Si-, Ge-, As- or Sb-based heterogroups.

227 ntroducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW).

228 re, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%.

229 t the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchica

230 sing path for improving the efficiency of Si/Ge-based SNW thermoelectrics.

231 eO, GaN, and ZnO on the tensile strain side, Ge, Si, and GaP on the compressive strain side.

232 w generation of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors

233 th technique that comprises of only a single Ge growth step and a single anneal step.

234 grow from smaller components with a single [Ge(4) ](4-) and ZnMes(2) units.

235 tions, C-H and X-H (X = N, O, S, Se, Si, Sn, Ge) functionalizations.

236 Previous work has demonstrated that Sn, Ge, Cu, Bi, and Sb ions could be used as alternative ion

237 raphic defect content of the resultant solid Ge films were analyzed by electron backscatter diffracti

238 metafilm using judiciously sized and spaced Ge nanobeams.

239 he band gap and electronic structure of ST12-Ge (tP12, P43212) due to experimental limitations in sam

240 Phase-pure bulk samples of ST12-Ge were synthesized, and the structure and purity were v

241 vidence for the intrinsic properties of ST12-Ge, including the first optical measurements on bulk sam

242 Optical measurements indicate that ST12-Ge is a semiconductor with an indirect band gap of 0.59

243 es, by synthesis of (29)Si-enriched starting Ge-UTL frameworks and incorporation of (17)O from (17)O-

244 -assembled growth of highly tensile-strained Ge/In0.52Al0.48As (InAlAs) nanocomposites by using spont

245 rrent capacity is associated with the strong Ge-S covalency and the high nonlinearity could arise fro

246 Substituting Ge for Sn weakens the {Ge,Sn}-S bonding interactions and

247 e, the careful control of the supersaturated Ge layer allows us to obtain perfectly site-controlled,

248 hyl groups were bonded directly atop surface Ge atoms.

249 ectron chemical oxidation of the symmetrical Ge(0) compound K2[(boryl)GeGe(boryl)] and its subsequent

250 t reaction in CCl3Br(l) formed Br-terminated Ge(111), as shown by the disappearance of the Ge-H absor

251 ed characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial stra

252 n a combined analysis herein, we report that Ge is potent in supressing the cathodic hydrogen evoluti

253 We show that Ge-SiC resonators with nanoscale footprint can support s

254 The Ge-Se interatomic distances extracted from XAS data show

255 loying reaction between the Li metal and the Ge.

256 orbitals, with small contributions from the Ge 4p and In 5p orbitals.

257 ribbons are self-aligning 3 degrees from the Ge<110> directions, are self-defining with predominantly

258 /0) clusters is absorbed endohedrally in the Ge cage.

259 non-equilibrium incorporation of Sn into the Ge nanowires can be understood in terms of a kinetic tra

260 the observed high crystalline quality of the Ge islands which is also associated with negligible Si-G

261 Due to the electron-rich character of the Ge(0) atom, the germylone 3 displayed quite unusual reac

262 e(111), as shown by the disappearance of the Ge-H absorption in the FTIR spectra concomitant with the

263 At elevated growth temperatures the Ge reservoir in the planar, supersaturated WL is abruptl

264 ce is over 20 times more conductive than the Ge-C-Ge sequence.

265 Sn was distributed throughout the Ge nanowire lattice with no metallic Sn segregation or p

266 nd alternating current simultaneously to the Ge-based Schottky devices, where the rectification magne

267 e addition of an annealing step close to the Ge-Sn eutectic temperature (230 degrees C) during cool-d

268 This is why the Ge atom can form the corresponding mono- and bis-AlBr(3)

269 Substituting Ge for Sn weakens the {Ge,Sn}-S bonding interactions and increases the charge d

270 Moreover, these Ge (n)F (n) inorganic cages are found to be transparent

271 ower-limit of ~10(4) cm(-2) for 1.5 um thick Ge layer.

272 ations surrounded by the pi systems of three Ge dumbbells, further underlines this interpretation.

273 nic ligand (R) that runs from T = Si through Ge to Sn and from R = methyl through phenyl and p-styryl

274 Ti/Ge distribution in rhombohedral LiTi2-xGex(PO4)3 NASICON

275 resonance is an excellent probe to follow Ti/Ge disorder, as it is sensitive to the atomic scale envi

276 ed here, PO4 units are surrounded by four Ti/Ge octahedra, and then, five different components ascrib

277 analysis of detected components, a random Ti/Ge distribution has been deduced in next nearest neighbo

278 hanges to the host framework geometry due to Ge -> Sn substitution.

279 Structural addition of only 0.95% wt Fe to Ge-imogolite not only alleviated the toxicity observed i

280 ectronegativity) that differ from C to Si to Ge.

281 e was obtained via reductive coupling of two Ge(0) atoms on the Ni center.

282 -carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric pola

283 o surface bonding are critical to understand Ge nanowire synthesis and provide new guidelines for rat

284 In this way, this unique Ge modification technique enables a stable cycling perfo

285 studies of [(HCDippN)2B]2GeGe reveal a weak Ge-Ge double bond-the pi component of which contributes

286 ed by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitax

287 In this study, GaN was doped with Ge to concentrations from 10(16) Ge atoms/cm(3) to 10(18

288 can form structurally abrupt interface with Ge(111).

289 in 54 % yields bearing the Ge2(2+) ion with Ge in the oxidation state +1.

290 ficient) of the two end-members of the Si1-x Ge x alloy.

291 Here we show that, self-diffusion in Si1-x Ge x alloys as a function of temperature and Ge concentr

292 sphorous-vacancy pairs (E-centres) in Si(1-x)Ge(x) alloys vary greatly with respect to the local Ge c

293 Silicon-germanium (Si(1-x)Ge(x)) has become a material of great interest to the ph

294 loric effect was quantified in CoMn(1-x)Fe(x)Ge (x = 0.085-0.12) nom.

295 CoMn(1-x)Fe(x)Ge demonstrated larger magnetic field-induced entropy ch

296 l stability phase diagram for the LnAuZ (Z = Ge, As, Sn, Sb, Pb, Bi) family of phases.

297 and one 3p(Ge) lone-pair) on the zerovalent Ge atom.

298 ic distortions of the one-dimensional zigzag Ge chains.

299 vices for Cu(2)ZnSn(S,Se)(4) (CZTS), Cu(2)Zn(Ge,Sn)(S,Se)(4) (CZGTS), CuIn(S,Se)(2) (CIS), and Cu(In,

300 , Mg, Si, Cl, Ca, Ti, V, Cr, Fe, Ni, Cu, Zn, Ge, Se, Br, Sr, Mo, Ag, Cd, Sn, Sb, Te, Ba, W, Pt, Hg, T

301 ds (Ca3Ti2O7, Ca3Mn2O7 and (Ca/Sr/Ba)3(Sn/Zr/Ge)2O7).