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1 PLED devices fabricated using these new HTLs exhibit com
2 PLED devices with luminance response times of microsecon
6 ITO substrates precoated with a conventional PLED HTL, poly(3,4-ethylenedioxythiophene)-poly(styrenes
8 hly-efficient polymer light-emitting diodes (PLEDs) based on the polymers are successfully realized,
9 ficiencies of polymer light emitting diodes (PLEDs) fabricated by simple solution methods that use po
10 rials to form polymer light-emitting diodes (PLEDs) that emit light of different wavelengths without
11 Shape-memory polymer light-emitting diodes (PLEDs) using a new silver nanowire/polymer electrode are
12 abrication of polymer light-emitting diodes (PLEDs) whose performance was comparable to noncross-link
14 onstrate that not only do these HTLs enhance PLED anode hole injection but they also exhibit signific
17 abrication of three generations of insoluble PLED HTLs: (1) self-assembled monolayers (SAMs) of TPDSi
19 tate-of-the-art performance of nonconjugated PLEDs, confirming the effectiveness of structural design
21 ic and polymer light-emitting diodes (OLEDs, PLEDs, respectively) and are indispensable if device ele
22 les (OLEDs), quantum dots (QLEDs), polymers (PLEDs), and recently-developed hybrid perovskites (PeLED
25 deformation shape change and recovery of the PLEDs to various bistable curvatures result in minimal l
26 Covalent chemical bonding of TPDSi(2) to PLED anodes (e.g., indium tin oxide, ITO) and its self-c