ライフサイエンスコーパス: Si

1 Si has been demonstrated to stimulate osteoblast differe

2 Si micropillars produced by MACE often show a porous Si/

3 Si-H insertion reactions represent an important method f

4 on, and morphology of hypereutectic Al-17wt.%Si and Al-20wt.%Si alloys have been investigated.

5 using the activated precatalysts rac-[Me(2) Si(indenyl)(2) ]ZrMe(2) and [Me(2) C(Cp)(fluorenyl)]ZrMe

6 N-heterocyclic silylene c-(CH)(2) (NtBu)(2) Si: proceeds directly to the corresponding tetrasilacycl

7 the centrosymmetric tetragonal magnet GdRu(2)Si(2) without a geometrically frustrated lattice by mean

8 normal transition sequence, such as Ni-Ni(2)Si-NiSi.

9 ular beam epitaxy-grown thin films of YbRh(2)Si(2), a model strange-metal compound.

10 cyclic silylenes c-[(CR(2) CH(2) )(NtBu)(2) ]Si: (R=H or methyl) with saturated backbones.

11 Finally, WS(2) films as-deposited on SiO(2)/Si substrates were used to fabricate a backgated Field E

12 ehavior in a low SFE Fe(40)Mn(20)Cr(15)Co(20)Si(5) (at%) high entropy alloy, SFE ~ 6.31 mJ m(-2).

13 cide (U(3)Si(5)), uranium carbide (UC), U(20)Si(16)C(3), and uranium silicide (USi) phases can form a

14 terials yielding the interfacial phases U(20)Si(16)C(3), U(3)Si(5) and UC reveal a thermodynamic driv

15 tricted formation of U(3)Si(5), UC, and U(20)Si(16)C(3)/USi phases at the interface.

16 gy of hypereutectic Al-17wt.%Si and Al-20wt.%Si alloys have been investigated.

17 or neurogenesis-dependent, as (56)Fe and (28)Si irradiation led to faster context discrimination in a

18 oving particles that includes (56)Fe and (28)Si.

19 characterization and quantification by (29) Si NMR spectroscopy has received significant attention,

20 limited by the low natural abundance of (29) Si and its low sensitivity.

21 Using natural abundance (29)Si MAS NMR spectroscopy with CPMG acquisition and standa

22 (15)N-(29)Si coupling constants and (29)Si chemical shifts show a high and dependable correlatio

23 nied by drastic changes in the (11)B and (29)Si NMR chemical shifts.

24 nuclear polarization enhanced (27)Al and (29)Si solid-state NMR experiments.

25 lectronic microscopy, X-ray diffraction, (29)Si NMR and nitrogen adsorption-desorption.

26 y long T(2) relaxation time of quartz in (29)Si and hence dramatically increasing the sensitivity.

27 ependent synthesis and comparison of its (29)Si{(1)H} NMR spectrum with that of the in situ reaction

28 ously assigned using (1)H, (13)C, (15)N, (29)Si, and (1)H DOSY NMR as well as X-ray diffraction studi

29 (15)N-(29)Si coupling constants and (29)Si chemical shifts show a

30 J-resolved SiH coupling and quantitative (29)Si measurements, diffuse reflectance IR, and elemental a

31 ids was conducted using high-sensitivity (29)Si NMR spectroscopy of isotopically enriched solutions c

32 initialize, read out and control single (29)Si nuclear spins.

33 and show that this signal correlates to (29)Si NMR signals from silicates in C-A-S-H, conflicting wi

34 large Si-rich microstructures in Al-12.2at.%Si alloy melt are probably aggregates comprising multipl

35 ucture in engineering-lightweight Al-12.2at.%Si alloy melt at 1100 degrees C, via melt-spinning (MS)

36 Si-rich microstructures exist in Al-12.2at.%Si alloy melt, and the large Si-rich microstructures dis

37 ) )(2) -substituted 2-pyrone and (CH(3) )(3) Si-C=P.

38 complexes of calcium and strontium, {(Me(3) Si)(2) N}M{B(NDippCH)(2) }(thf)(n) (M=Ca, n=2; M=Sr, n=3

39 ns with a Ni(2) -mediated coupling of (Me(3) Si)CHN(2) and the diene.

40 )/U(IV) imide cyclometalate complex, [((Me(3)Si)(2)N)(2)(THF)U(mu-NH)(mu-kappa(2):C,N-CH(2)SiMe(2)NSi

41 [{((Me(3)Si)(2)N)(2)U(THF)}(2)(mu-N)][((Me(3)Si)(2)N)(2)U(eta(1)-CCPh)(mu(2)-NH)(mu(2)-eta(2):eta(1)-

42 V)/U(IV) nitride complex [Na(DME)(3)][((Me(3)Si)(2)N)(2)U(mu-N)(mu-kappa(2):CN-CH(2)SiMe(2)NSiMe(3))U

43 , namely, the U(III)/U(IV) complex, [{((Me(3)Si)(2)N)(2)U(THF)}(2)(mu-N)], 4.

44 tylene to yield the imide acetylide [{((Me(3)Si)(2)N)(2)U(THF)}(2)(mu-N)][((Me(3)Si)(2)N)(2)U(eta(1)-

45 tionic U(IV)/U(IV) nitride complex, [{((Me(3)Si)(2)N)(2)U(THF)}(2)(mu-N)][BPh(4)] (THF = tetrahydrofu

46 rom C-H bond activation of toluene, [{((Me(3)Si)(2)N)(2)U(THF)}(2)(mu-N)][{((Me(3)Si)(2)N)(3)U(mu-NH)

47 imide hydride U(III)/U(IV) complex, [{((Me(3)Si)(2)N)(2)U(THF)}(2)(mu-NH)(mu-H)], 9.

48 {((Me(3)Si)(2)N)(2)U(THF)}(2)(mu-N)][{((Me(3)Si)(2)N)(3)U(mu-NH)U(N(SiMe(3))(2))}(2)(C(7)H(8))], 6.

49 cal [P(mu-NHyp)](2) (Hyp = hypersilyl, (Me(3)Si)(3)Si) with different isonitriles afforded a series o

50 Since attractive interligand Cl/R(3)Si contacts had already previously been invoked to expla

51 catalyst interacts with the neighboring R(3)Si group.

52 (mu-NHyp)](2) (Hyp = hypersilyl, (Me(3)Si)(3)Si) with different isonitriles afforded a series of five

53 A detailed study of U(3)Si(2) and SiC defect formation energies of the equilibra

54 ck of continuous interaction between the U(3)Si(2) and SiC, reflects the diminishing driving force fo

55 Triuranium disilicide (U(3)Si(2)) fuel with silicon carbide (SiC) composite claddin

56 the interfacial phases U(20)Si(16)C(3), U(3)Si(5) and UC reveal a thermodynamic driving force for ge

57 monstrate that triuranium pentasilicide (U(3)Si(5)), uranium carbide (UC), U(20)Si(16)C(3), and urani

58 ith demonstrated restricted formation of U(3)Si(5), UC, and U(20)Si(16)C(3)/USi phases at the interfa

59 The construction of C(sp(3))-Si bonds is important in synthetic, medicinal, and mater

60 tly light Si isotopes in EC-metals (delta(30)Si >= -6.94 +/- 0.09 per mille, Mg/Si = ~0.001) whereas

61 , causing the highest natural fluid delta(30)Si values measured to date (up to +5.2 +/- 0.2 per mille

62 the ocean with extremely high fluid delta(30)Si values, which can explain anomalies in the marine Si

63 , Mg/Si = ~1.01) and closer to BSE (delta(30)Si(BSE) = -0.29 +/- 0.08 per mille).

64 delta(30)Si(EC-silicates) = -0.33 +/- 0.11 per mille, Mg/Si = ~1.

65 r Si, B, and Sr isotope signatures (delta(30)Si, delta(11)B, and (87)Sr/(86)Sr, respectively) to stud

66 yet complex structure of the new phase Mn(39)Si(9)N(x) (x = 0.84).

67 **))(eta(5)-Cp*)] (1) (Pn(**) = C(8)H(4)(1,4-Si(i)Pr(3))(2), Cp* = C(5)Me(5)) with ethene at atmosphe

68 of the ultrathin films to be 38% Ni and 62% Si.

69 tion of the uranyl cluster, [(UO(2))(3)(Cy(7)Si(7)O(12))(2)(Et(2)O)(MeCN)(2)] (2), as yellow rods in

70 )(OH)(3) in THF affords [U(OSiMe(3))(3)(Cy(7)Si(7)O(12))] (1) as orange plates in 24% isolated yield.

71 [UO(2)(N(SiMe(3))(2))(2)(THF)(2)] with Cy(7)Si(7)O(9)(OH)(3) in hexanes, followed by recrystallizati

72 iMe(3))(2))(2)(THF)(2)] with 1 equiv of Cy(7)Si(7)O(9)(OH)(3) in THF affords [U(OSiMe(3))(3)(Cy(7)Si(

73 As an application, a Si(3)N(4)-based optical isolator is demonstrated by spat

74 a shell using tetraethoxysilane (TEOS), as a Si source, was stabilized on the surface of CDs via reve

75 Here we demonstrate a Si memristor with alloyed conduction channels that shows

76 ng-compatible macroporous architecture for a Si-graphite anode to maximize the volumetric energy dens

77 re serpentinization is directly related to a Si deficiency in the serpentine structure, which itself

78 eficial effects of a Ni(II) ion binding to a Si|PNP type surface as a result of significant thermodyn

79 his reaction, using a Cu-CHA catalyst with a Si/Al ratio of 15 and 2.6 wt% Cu, by X-ray absorption sp

80 e hydrogenated amorphous Si nanoparticles (a-Si:H NPs) offering ideal features for functional nanopho

81 the performance and reliability issues of a-Si:H, low-temperature polycrystalline silicon and amorph

82 oxide semiconductors have partly replaced a-Si:H channel materials.

83 w decades, hydrogenated amorphous silicon (a-Si:H) has been widely utilized as a TFT channel material

84 and occurs over the mildly Bronsted acidic =Si-OH groups present in the silanol nest of DeAlBEA.

85 of the silicene phases due to the strong Ag-Si hybridization.

86 primary alpha-Al dendrites and ultrafine Al-Si eutectic of lamellar morphology.

87 ed mineralisation in hDFC cultures, although Si alone had no such effect.

88 neering to synthesize hydrogenated amorphous Si nanoparticles (a-Si:H NPs) offering ideal features fo

89 Dirhodium(II) carboxylates catalyze an Si-H insertion using carbenes derived from diazo compoun

90 avorable in that order for both C(2)H(2) and Si(2)H(2).

91 > trans-bent -> linear for both C(2)H(2) and Si(2)H(2).

92 Under the Si-adsorption and Si-substitution effects, the planar geometric structures

93 though O sites in both framework Si-O-Al and Si-O-Si linkages are enriched simply on exposure to H(2)

94 ined mainly owing to the very strong C-C and Si-C bonds on the honeycomb lattices, respectively.

95 orders of magnitude lower than Au-, C-, and Si-based nanomaterials.

96 dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monoli

97 luded As, Be, Ca, Cd, Co, Cr, Fe, Mn, Ni and Si, and accumulated elements in the following order: Ama

98 h hexagonal closed-packed Te sublattices and Si-Si dimers occupying octahedral intercalation sites.

99 A detailed examination of aqueous Si complexation by alditols and aldonic acids was conduc

100 The active centers for this process are =Si-O-Y(OH)-O-Si= or =Si-O-Zn-O-Si-O= groups closely asso

101 d the following reductions in chipping area: Si (~ 23%), SiC (~ 36%), sapphire (~ 45%), and PSS (~ 33

102 650), largely outperforming state-of-the-art Si-nanowire strain sensors and even piezoresistive, piez

103 gh three-dimensional semiconductors, such as Si, are common in inorganic materials, imparting electri

104 0-13) to conventional semiconductors such as Si, Ge and GaAs.

105 common PDs with a broadband response such as Si-based PDs.

106 rnary nano-crystals have to be described as (Si,Ti)(3)N(4) with N-vacancies resulting in the general

107 15 at% Si alloyed in Fe substantially reduces its conductivity

108 An outer core with 15 at% Si would have a conductivity of about 20 W m(-1) K(-1),

109 olithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots.

110 tion of the nitride into the E-H bonds (E=B, Si).

111 s adsorbed onto nanoporous p-type silicon (b-Si) photocathodes decorated with Ag nanoparticles (Ag NP

112 of biotinylated silica-nanoparticles (biotin-Si-NPs).

113 Characterization of biotin-Si-NPs onto a paper with immobilized DNA was done using

114 placement of the single biotin by the biotin-Si-NPs boosted on average a 30 fold chemiluminescent rea

115 ated that the new dot blot coupled to biotin-Si-NPs successfully detected Campylobacter from naturall

116 optoelectronic devices compatible with both Si and III-nitride technologies.

117 reaction of three CO(2) molecules with both Si=C bonds.

118 macroporous structure coated by the brittle Si nanolayer can withstand high pressure and maintain it

119 lopment in copper-catalysed C-C, C-N, C-B, C-Si and C-F bond-forming reactions using unactivated alky

120 the reversible reactions of cyclotrisilene c-Si(3) Tip(4) (Tip=2,4,6-triisopropylphenyl) with the N-h

121 thod for the efficient construction of new C-Si bonds, and typically, they are conducted in the prese

122 up to 1010 nm, close to that of a commercial Si photodiode.

123 A zeolites of essentially fixed composition (Si/Al = 15).

124 tanium nitride with the general composition (Si(1-x),Ti(x))(3)N(4) with x = 0 < x < 1 and spinel-type

125 ancies resulting in the general composition (Si(4+)(1-x) Ti(4+)(x-delta)Ti(3+)(delta))(3)N(4-delta).

126 where silica has grown on highly conductive Si(110) crystal facets, the silica-silicon conversion be

127 h significant concentrations of 5-coordinate Si bis-ligand complex being detected even under biologic

128 semblages containing 4-, 5-, or 6-coordinate Si centers have been identified, with significant concen

129 or the initial strength of the coordination Si <- N bond in XS.

130 two equivalents of "silicocenium" cation [Cp*Si](+) as a source of low-valent Si(II), cleanly gives a

131 coating to reduce chipping when used to cut Si, SiC, sapphire, and patterned sapphire substrates (PS

132 Two-dimensional Si(2)Te(3) nanoplates with thicknesses of hundreds of na

133 Lewis acid-base bifunctionality of divalent Si centres.

134 ) grasses did not show consistently elevated Si concentrations compared with C(3) grasses.

135 Substituent factors of F(-Si(CH(3))(2)OR) and F(-SiCH(3)(OR)(2)) are proposed for

136 s method relies on thermodynamically favored Si-F bond formation to generate a carbanion, therefore e

137 ed thermal conductivities of solid Fe and Fe-Si alloys up to 144 GPa and 3300 K.

138 iron binary systems: Fe-C, Fe-O, Fe-S and Fe-Si.

139 For Si(2)H(2), the antibonding intra-atomic energy changes t

140 hows that although O sites in both framework Si-O-Al and Si-O-Si linkages are enriched simply on expo

141 transitions are confirmed to originate from Si and C impurities occupying shallow energy levels in t

142 Furthermore, Si-containing bioactive glass biomaterials have positive

143 designed for planar, rigid substrates (e.g., Si wafers).

144 o different TWIMS platforms (i.e., Synapt G2-Si and two Vion IMS QToF; bias within the threshold of +

145 ase (Si(1-x),Ti(x))(3)N(4) embedded in gamma-Si(3)N(4) are identified.

146 a and 1800-2000 degrees C, spinel-type gamma-Si(3)N(4) and rock salt-type c-TiN are formed.

147 implications ranging from defense to global Si cycling.

148 rts have shown that C-H, N-H, B-H, O-H, S-H, Si-H, Ge-H, Sn-H and P-H insertion reactions are feasibl

149 rating different groups, including C-, Hal-, Si-, S-, Se-, and Sn-substituents.

150 analyses of large seawater samples with high Si(OH)(4) contents.

151 However, Si in combination with OIM increased the magnitude of ex

152 nococcus oeni into SiO(2)-alginate hydrogel (Si-ALG) and the addition of lysozyme in wines inoculated

153 r of hydroxy groups to form hypercoordinated Si complexes, although formation constants may be orders

154 geneities on early-stage defect formation in Si electrodes.

155 Beyond the increase in Si coordination observed at 20 GPa, we find no evidence

156 Southern Ocean that together show increased Si supply from deep mixing during the deglaciation with

157 hetic pathway or growth condition influenced Si concentration.

158 Instead, Si along with Mg isotope analyses carried out in the sam

159 ervations across the multi-level interfaces (Si/Li(x)Si/inner-SEI/outer-SEI), thus offering novel ins

160 , the unusual shortening of the internuclear Si...N distance is always observed.

161 intermolecular diarylcarbene insertion into Si-H bonds for the synthesis of silicon-stereogenic sila

162 r epitaxial [Formula: see text] on intrinsic Si(001).

163 t in Al-12.2at.%Si alloy melt, and the large Si-rich microstructures disrupt into small Si-rich micro

164 is of the MS alloys indicates that the large Si-rich microstructures in Al-12.2at.%Si alloy melt are

165 e report the presence of significantly light Si isotopes in EC-metals (delta(30)Si >= -6.94 +/- 0.09

166 ebular environment and vapor loss of lighter Si isotopes during planetary volatilization were also in

167 tegrating AlN actuators(14) on ultralow-loss Si(3)N(4) photonic circuits(15), we demonstrate voltage-

168 tructural analogues XM(YCH(2)CH(2))(3)N (M = Si, Ge, Sn, Pb, Ti, Al, Cr, Fe, Ni...; Y = O, NR, CH(2),

169 h as the short M-Si bonds, a nearly linear M-Si-M spine, long M-C bonds, and the presence of two plan

170 Hoff/Le Bel ptSi center, such as the short M-Si bonds, a nearly linear M-Si-M spine, long M-C bonds,

171 the metallasilylidyne complexes [Tp'(CO)(2)M=Si-M(CO)(2)(PMe(3))Tp'] with alkynes R(1)C=CR(2) and wer

172 The lab-made Si(PGDMS) sorbent was physicochemically and morphologica

173 n future investigations of the global marine Si cycle.

174 s, which can explain anomalies in the marine Si budget like in the Cascadia Basin and which has to be

175 (delta(30)Si >= -6.94 +/- 0.09 per mille, Mg/Si = ~0.001) whereas its silicate phases are isotopicall

176 EC-silicates) = -0.33 +/- 0.11 per mille, Mg/Si = ~1.01) and closer to BSE (delta(30)Si(BSE) = -0.29

177 n technique for samples with low to moderate Si contents as it is inexpensive, simple to implement, a

178 of the cationic silicon center through an N-Si interaction and formation of a highly strained four-m

179 up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN(2) layer sandwiched b

180 was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN(2) layer sa

181 To demonstrate this concept, we prepared n-Si/Au nanoparticle Schottky junctions by electrodepositi

182 ral and optical properties of nanostructured Si(2)Te(3) hold great potential applications in optoelec

183 1D (e.g. carbon nanotubes, Si nanowires, conductive polymer nanowires, 1D metal oxi

184 ies that large quantities of small (0-10 nm) Si-rich microstructures and small quantities of large (1

185 es and small quantities of large (10-240 nm) Si-rich microstructures exist in Al-12.2at.%Si alloy mel

186 biasing the framework Al arrangement (Al-O(-Si-O)(x)-Al, x = 1-3) among CHA zeolites of essentially

187 plus degrader, and the 5 heavy ions of C, O, Si, Ti, and Fe.

188 e centers for this process are =Si-O-Y(OH)-O-Si= or =Si-O-Zn-O-Si-O= groups closely associated with a

189 h O sites in both framework Si-O-Al and Si-O-Si linkages are enriched simply on exposure to H(2)(17)O

190 process are =Si-O-Y(OH)-O-Si= or =Si-O-Zn-O-Si-O= groups closely associated with adjacent silanol gr

191 r genes- Lsi1 and Lsi2 while the addition of Si further greatly induced their expression under Buta t

192 except Na), while addition of Si reversed Buta-induced alterations.

193 ilic nature allows for oxidative addition of Si-H, N-H, and even C-C bonds at the aluminum center.

194 gives a borole half-sandwich pai-complex of Si(II) and silicocene.

195 t experimental evidence of the disruption of Si-rich microstructure in engineering-lightweight Al-12.

196 Dosages of Si above 100 mug/ml decreased cell proliferation.

197 The molecular energy of Si(2)H(2) geometric structures increases in the order di

198 exposure to H(2)(17)O(l), the enrichment of Si-O-Al species is more rapid, with a more uniform frame

199 Buta stimulated the expression of Si channel and efflux transporter genes- Lsi1 and Lsi2 w

200 d small footprint for the next generation of Si-based on-chip optical interconnects.

201 tilation at the YD and marked an interval of Si cycle reorganisation.

202 uptake assay demonstrated that 25 mug/ml of Si significantly stimulated hDFC cell proliferation.

203 hallenge to achieve high-speed modulation of Si(3)N(4).

204 and leaf and root anatomy, up-regulation of Si channel and transporter genes, ascorbate-glutathione

205 study was carried out to explore the role of Si (10 uM) in regulating Buta (4 uM) toxicity in rice se

206 ct in bulk centrosymmetric semiconductors of Si, TiO(2) and Nb-SrTiO(3) with high strain sensitivity

207 r alteration of serpentinites is a source of Si to the ocean with extremely high fluid delta(30)Si va

208 homogeneities on the structural stability of Si-based lithium-ion batteries.

209 luorescence data show that the two suites of Si-based material sourced from the different reactor Uni

210 Synthesis of MoS(2) on Si(001) surfaces pre-treated with phosphine yields high-

211 Integrated photonic devices based on Si(3)N(4) waveguides allow for the exploitation of nonli

212 We show, for 10 nm Ni films on Si, that their composition follows a normal transition s

213 h quality cuprous iodide (CuI) film grown on Si and sapphire substrates by molecular beam epitaxy.

214 sized III-V photovoltaic (PV) cells grown on Si and silicon-on-insulator (SOI) substrates can be inte

215 The MOFs are grown on Si/SiOx substrates modified with an organic monolayer or

216 olymerization from initiators immobilized on Si/SiO(2) wafers.

217 er power density than all prior micro-PVs on Si and SOI substrates.

218 cts of water availability and temperature on Si deposition.

219 m fixation of two CO(2) molecules across one Si=C bond, two different products could be isolated from

220 e, deposited by DC magnetron sputtering onto Si(100).

221 Coprecipitation of P or Si during synthesis altered the structure of Fe precipit

222 idation, in the absence and presence of P or Si.

223 The pure and P- or Si-bearing FeOx were deployed in (i) freshwater sediment

224 s for this process are =Si-O-Y(OH)-O-Si= or =Si-O-Zn-O-Si-O= groups closely associated with adjacent

225 of the discovered nano-sized ternary phase (Si(1-x),Ti(x))(3)N(4) embedded in gamma-Si(3)N(4) are id

226 The device is first fabricated on a planar Si wafer at the microscale and then transferred to trans

227 V), which is restored to the level of planar Si control (- 0.5 V) after removing SiO(x) in hydrofluor

228 imately 1000 times as compared to the planar Si in an electrolyte-insulator-semiconductor (EIS) struc

229 pillars produced by MACE often show a porous Si/SiO(x) shell on crystalline pillar cores introduced b

230 optoelectronic characteristics of the porous Si/SiO(x) shell correlated to their chemical composition

231 Based on high precision Si isotope analyses in micro-milled phase separates of E

232 mbly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance

233 ubstituted phosphasilene forms two radicals (Si- and P-centred); and c) Mes-substituted phosphasilene

234 the voltage and power levels required to run Si electronics using common temperature differences.

235 opropanations, C-H and X-H (X = N, O, S, Se, Si, Sn, Ge) functionalizations.

236 The p-type semiconductor Si(2)Te(3) has a unique layered crystal structure with h

237 on in the mantle wedge caused no significant Si isotope fractionation, implying closed system conditi

238 uggest that processes such as metal-silicate Si isotope fractionation at reduced nebular environment

239 utrients such as phosphate (P) and silicate (Si) by ferric iron (oxyhydr)oxides (FeOx) modulates nutr

240 Silicon (Si) uptake and accumulation in plants can mitigate vario

241 nductor (EIS) structures as well as silicon (Si) nanowire (NW) field-effect transistors (FETs) covere

242 studies have indicated that dietary silicon (Si) is beneficial for bone homeostasis and skeletal heal

243 alloyed with light elements, e.g., silicon (Si).

244 CM) memory(4,5), typically based on silicon (Si), has demonstrated a good analogue switching capabili

245 Polarized Raman measurements of single Si(2)Te(3) nanoplates at different temperatures reveal v

246 e Si-rich microstructures disrupt into small Si-rich microstructures with increasing of melt temperat

247 robably aggregates comprising multiple small Si-rich microstructures.

248 dy was to investigate the effects of soluble Si on osteogenic differentiation and connexin 43 (CX43)

249 Our findings reveal that soluble Si stimulates Cx43 gap junction communication in hDFC an

250 els display pH sensitivity from the standard Si(3)N(4) passivation layer.

251 etically uphill reductive cleavage of strong Si-Cl bonds.

252 hyrin, namely, silicon tetraphenylporphyrin (Si-TPP), by the deposition of atomic silicon onto a free

253 her, the results support the conclusion that Si is beneficial for bone health.

254 tential measurements in the dark reveal that Si|BisPNP-Ni also exhibits the most positive V(FB) value

255 Flow cytometric measurements revealed that Si (50 mug/ml) significantly increased CX43 protein expr

256 Our results suggest that Si-governed mitigation of Buta toxicity is linked with f

257 The Si-doped graphene systems might be a highly promising an

258 The Si-TPP complex presents a saddle-shaped conformation tha

259 The Si=C bonds show a distinguished reactivity toward CO(2),

260 Protonation at the Si(II) atom with [H(OEt(2))(2)][Al{OC(CF(3))(3)}(4)] ind

261 isopropylphosphino)xanthene) coordinates the Si-H bond of triethylsilane, 1,1,1,3,5,5,5-heptamethyltr

262 on were also influential in establishing the Si isotope composition of terrestrial mantle.

263 Importantly, the Si-doped Fe catalyst can achieve the same TOF of pure Fe

264 pump, the glacial-interglacial shift in the Si cycle may present an important control on Pleistocene

265 ng to the high mobility of metal ions in the Si switching medium(8).

266 d the compound rearranges to incorporate the Si atom into the carbocyclic base to give an unprecedent

267 re positioned over a cavity, etched into the Si substrate, that provides thermal isolation and is des

268 At temperatures below 150 K, the Si(2)Te(3) nanoplates exhibit a direct band structure wi

269 The density of surface states of the Si wafer is changed by introducing different densities o

270 structural and electronic properties of the Si-adsorbed and -substituted monolayer graphene systems

271 th the isolation and characterization of the Si-centered chiral silyl cation intermediates, finally a

272 stinct optoelectronic characteristics of the Si/SiO(x) shell can be beneficial for various sensor arc

273 sequences of differential ventilation on the Si cycle has not been explored.

274 (4+) oxidation states and are located on the Si sites.

275 re formed by single pulse irradiation on the Si substrate, and a twisted cone structure with a height

276 nnectivity of their sub-nanometer pores, the Si/Al ratio of the anionic framework, and the charge-bal

277 adatom-diversified geometric structures, the Si- and C-dominated energy bands, the spatial charge den

278 theory (DFT) calculations revealed that the Si=C bonds are involved in an expanded pai-conjugated sy

279 nts under catalytic conditions show that the Si|BisPNP-Ni substrate exhibits the most positive onset

280 ctionalities are directly linked through the Si-C bond, unlike the industry's traditional viscosifier

281 Under the Si-adsorption and Si-substitution effects, the planar ge

282 P Expedition 366 were investigated for their Si, B, and Sr isotope signatures (delta(30)Si, delta(11)

283 ted analysis cell based on an IR-transparent Si membrane with advantages of a robust design, flexible

284 wed as a MoN(2) layer sandwiched between two Si-N bilayers.

285 e first dibenzo[a,e]disilapentalene with two Si=C moieties in the heteropentalene core has been prepa

286 l (Schottky) junctions formed between n-type Si and Au nanoparticles as light-addressable electrochem

287 ype diamond coated tip on a P-type or N-type Si wafers.

288 diameters ~100-120 nm were grown on a p-type Si(111) substrate by molecular beam epitaxy (MBE).

289 standing different stages of AD by utilizing Si TL NW FET structures fabricated on the basis of cost-

290 cation [Cp*Si](+) as a source of low-valent Si(II), cleanly gives a borole half-sandwich pai-complex

291 iO(x) membrane on chemically etched vertical Si nanowires (SiNWs) in an electrolyte-insulator-nanowir

292 The optimized NiO(x) membrane on vertical Si nanowire in the EIN structure shows a good drift rate

293 The vertical Si nanowires with approximately 17 mum length and polycr

294 dium (OIM) by itself and in combination with Si (25 mug/ml) significantly increased mineralisation in

295 e generators can be directly integrated with Si circuits and scaled up in area to generate voltages a

296 A catalytic cycle is proposed with Si-H insertion as the rate-determining step, supported b

297 degrees C, via melt-spinning (MS) of Al(1-x)Si(x) (x = 0.03,0.07,0.122,0.2) alloy melts from differe

298 s across the multi-level interfaces (Si/Li(x)Si/inner-SEI/outer-SEI), thus offering novel insights in

299 th oxygen content of 4 sccm on planar SiO(x)/Si substrate shows good pH sensitivity of approximately

300 Complementary experiments yielding Si-TPP and Ge-TPP on Ag(111) highlight the applicability