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1 ified CeO(2) supports based on redox-coupled atomic layer deposition.
2 ing the catalyst with a second oxide through atomic layer deposition.
3 has been developed that is tantamount to wet atomic layer deposition.
4 rticles has been systematically varied using atomic layer deposition.
5 bnanometer pores for molecular sieving using atomic layer deposition.
6  can be applied to other material systems in atomic layer deposition.
7 terials via processes such as silylation and atomic layer deposition.
8 e using ultrathin aluminium oxide (Al2O3) by atomic layer deposition.
9 atalytically active anatase-phase TiO2 using atomic layer deposition.
10 version can be engineered by plasma-enhanced atomic layer deposition.
11 t have been deposited onto MgAl(2)O(4) using atomic layer deposition.
12 H3PbBr3 perovskite using spatial atmospheric atomic layer deposition.
13 s line defects, notably grain boundaries, by atomic layer deposition.
14 ed with a thin outer shell of TiO2 formed by atomic layer deposition.
15 her tuning and chemical derivatization using atomic-layer deposition.
16 ce consisting of bottom p-Si light absorber, atomic layer deposition Al-ZnO passivation layers, and t
17                                              Atomic layer deposition (ALD) and molecular layer deposi
18  unparalleled precision at the atomic level, atomic layer deposition (ALD) and molecular layer deposi
19 precision on any solid material by combining atomic layer deposition (ALD) and selectively self-assem
20 ed zirconia (LSM/YSZ) cathode backbone using Atomic Layer Deposition (ALD) and thermal treatment.
21 ys was evaluated using platinum deposited by atomic layer deposition (ALD) as a HER cocatalyst.
22 oxide (AZO) was deposited by low-temperature atomic layer deposition (ALD) as the transparent conduct
23  template to polydimethylsiloxane (PDMS) via atomic layer deposition (ALD) assisted sacrificial etchi
24 s of hematite (alpha-Fe(2)O(3)) deposited by atomic layer deposition (ALD) coated with varying amount
25                     Recent work on conformal atomic layer deposition (ALD) coating of anodes and cath
26                           We show that a few atomic layer deposition (ALD) cycles of zinc oxide onto
27 w-temperature process (<250 degrees C) using atomic layer deposition (ALD) for the synthesis of unifo
28 of the adsorption reaction for metal-nitride atomic layer deposition (ALD) from alkylamido organometa
29                                              Atomic layer deposition (ALD) has evolved as an importan
30                                              Atomic layer deposition (ALD) has recently gained intere
31 and large quantity (denoted as Ni-AIM) using atomic layer deposition (ALD) in a MOF (AIM).
32 or in situ monitoring of thin-film growth by atomic layer deposition (ALD) in a viscous flow environm
33                                     Notably, atomic layer deposition (ALD) in MOFs has recently emerg
34                                              Atomic layer deposition (ALD) is a method to grow thin m
35                                              Atomic layer deposition (ALD) is a process for depositin
36 us titanium dioxide (TiO(2)) film coating by atomic layer deposition (ALD) is a promising strategy to
37                                              Atomic layer deposition (ALD) is a surface synthesis tec
38                                        Here, atomic layer deposition (ALD) is employed to synthesize
39 ogress in the simulation of the chemistry of atomic layer deposition (ALD) is presented for technolog
40  that can create complex materials; however, atomic layer deposition (ALD) is uniquely suited to cont
41                                              Atomic layer deposition (ALD) is used to deposit a sub-1
42                                              Atomic layer deposition (ALD) is widely used for gas-pha
43 ticles (NPs) can be covered precisely by the atomic layer deposition (ALD) method, whereas the terrac
44 e heterostructures, which are synthesized by atomic layer deposition (ALD) of a few-nanometer amorpho
45 cient photovoltaic material, is protected by atomic layer deposition (ALD) of a highly uniform, 2 nm
46                                   Subsequent atomic layer deposition (ALD) of Al2O3 or TiO2 along wit
47 es of the M1 phase exposed selectively after atomic layer deposition (ALD) of alumina followed by cru
48             The fabrication process utilizes atomic layer deposition (ALD) of aluminum oxide to confo
49                                              Atomic layer deposition (ALD) of an alumina overcoat can
50 bly was further stabilized on the surface by atomic layer deposition (ALD) of either Al2O3 or TiO2 ov
51                               We investigate atomic layer deposition (ALD) of metal oxide on pristine
52 f Mo(NMe2 )4 as a volatile precursor for the atomic layer deposition (ALD) of MoS2 thin films.
53                                              Atomic layer deposition (ALD) of TiO(2) was performed in
54 ng gamma-Al(2)O(3)-based pellet support with atomic layer deposition (ALD) of TiO(2).
55 ep surface modification method that includes atomic layer deposition (ALD) of TiO2 followed by post-a
56 he initial surface reactions involved in the atomic layer deposition (ALD) of TiO2 from TiI4 and H2O
57                 In this report, we show that atomic layer deposition (ALD) of titania (TiO2) and alum
58 ere used to investigate surface reactions in atomic layer deposition (ALD) of zirconium oxide (ZrO(2)
59 dimeric methylalumina surface species during atomic layer deposition (ALD) on a silver surface.
60 ith a Zinc Oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) on the tip of a single-mod
61         We found TiO2 coatings deposited via atomic layer deposition (ALD) onto polyamide-6 nanofiber
62 ed by replacing a nitrogen-containing TiO(2) atomic layer deposition (ALD) precursor (TDMAT) with a p
63 y and high thermal stability and have useful atomic layer deposition (ALD) precursor properties.
64 orted to date through screening a library of atomic layer deposition (ALD) precursors, which span met
65              Here we introduce a new, robust atomic layer deposition (ALD) procedure for the preparat
66 ium NPs with 45 layers of alumina through an atomic layer deposition (ALD) process that alternated ex
67                      Here, we demonstrate an atomic layer deposition (ALD) process with a double nitr
68 rade NMC811 electrodes with Al(2)O(3) by the atomic layer deposition (ALD) technique.
69 is contribution, we explore the potential of atomic layer deposition (ALD) techniques for developing
70 g a combination of nanocrystal catalysts and atomic layer deposition (ALD) techniques.
71 created on SnO2 and TiO2 photoelectrodes via atomic layer deposition (ALD) to examine their influence
72                           The application of atomic layer deposition (ALD) to metal-organic framework
73 HfO(2) films grown on clean GeNW surfaces by atomic layer deposition (ALD) using an alkylamide precur
74 or SAM preparation and the implementation of atomic layer deposition (ALD) using copper di-sec-butyla
75 ed waveguides using an alumina film grown by atomic layer deposition (ALD) which are the lowest-loss
76 an atomic scale are successfully prepared by atomic layer deposition (ALD) with controlled oxidizatio
77 ted with an aluminum oxide film deposited by atomic layer deposition (ALD) with optically pumped NMR
78 ride (Nb(1-x)Ti(x)N) thin films grown by the atomic layer deposition (ALD) with slightly different gr
79 es, such as Layer-by-Layer (LbL) deposition, Atomic Layer Deposition (ALD), and porous silicon (porSi
80 anes through electrospinning followed by the atomic layer deposition (ALD), here we presented a high
81 e modifications, like thin films prepared by atomic layer deposition (ALD), that require substrates t
82 ematite (alpha-Fe(2)O(3)) was synthesized by atomic layer deposition (ALD).
83  palladium nanoparticle surfaces prepared by atomic layer deposition (ALD).
84 olutions using the electrochemical analog of atomic layer deposition (ALD).
85  two reactants, in a process commonly called atomic layer deposition (ALD).
86 g. a polymer thin film) in a process akin to atomic layer deposition (ALD).
87 mi crystals with functional metal oxides via atomic layer deposition (ALD).
88 (0.2)O(2) cathode particles using rotary-bed atomic layer deposition (ALD).
89 r these applications which can be enabled by atomic layer deposition (ALD).
90 chemical conversion of WO(3) synthesized via atomic layer deposition (ALD).
91  thin films of Zinc Oxide (ZnO) deposited by atomic layer deposition (ALD).
92 rbon by growing a thin layer of FeO(x) using atomic layer deposition (ALD).
93  polypeptide thin films were synthesized via atomic layer deposition (ALD).
94  (TiO2) on the dye-coated photoelectrode via atomic layer deposition (ALD).
95 able of metallating MOFs from the gas phase: atomic layer deposition (ALD).
96 ive magnetron sputtering, RMS) and chemical (atomic layer deposition, ALD) vapour deposition methods
97                                              Atomic layer deposition allows us to deposit Pt predomin
98 lysis and materials science, are prepared by atomic layer deposition and are subsequently functionali
99 he sub-10-nm gap size is precisely tuned via atomic layer deposition and highly ordered arrays are pr
100                                              Atomic layer deposition and magnetron sputter deposition
101 troduce a new patterning technology based on atomic layer deposition and simple adhesive-tape-based p
102 passivation layer and nitrogen packaging via atomic layer deposition and ultra-violet curable resin s
103 nce and fluorescence), thin film deposition (atomic layer deposition and vapor phase deposition), and
104 individual single-walled carbon nanotubes by atomic-layer deposition and used as gate dielectrics for
105 and are thus promising precursors for ALD (= atomic layer deposition) and MOCVD (= metal-organic chem
106 r borophene, such as molecular beam epitaxy, atomic layer deposition, and chemical vapor deposition,
107 ere fabricated using two-photon lithography, atomic layer deposition, and oxygen plasma etching.
108 to monitor and control metal oxide growth in atomic layer deposition, and we include data for SiO(2)
109 he development of a new atmospheric pressure-atomic layer deposition(AP-ALD) system to coat the inner
110 in a set up that takes full advantage of the atomic layer deposition approach.
111                     Recently, area-selective atomic layer deposition (AS-ALD), which allows the direc
112                                    Colloidal atomic layer deposition (c-ALD) enables the growth of hy
113                         The use of colloidal atomic layer deposition (c-ALD) for the growth of the me
114  this work, we introduce a general colloidal atomic layer deposition (c-ALD) synthesis to grow an alu
115 iscuss a novel synthetic strategy, colloidal atomic layer deposition (c-ALD) with stationary reactant
116 h of an amorphous alumina shell by colloidal atomic layer deposition (c-ALD).
117 nductor nanoparticles, inspired by colloidal atomic layer deposition (cALD).
118 rature metal pastes, electroless plating and atomic layer deposition can all be used within the micro
119     Next we introduce the use of sol-gel and atomic layer deposition chemistry for the production and
120 rystals with a few nanometres of Al2O3 using atomic layer deposition decreased the film resistivity b
121                         Here we show that an atomic layer deposition derived V(2) O(5) can be an exce
122  alumina films deposited via low-temperature atomic layer deposition effectively protect V[TCNE](x) b
123 sation, including plasma and UV irradiation, atomic layer deposition, electrochemistry, oxidation, re
124          The unique layer-by-layer nature of atomic-layer deposition enables atomic scale engineering
125            Here, we used the facet-selective atomic layer deposition (FS-ALD) technique to selectivel
126 ed stability, and their conformal growth via atomic layer deposition has been established.
127  of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potentia
128 ased ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promi
129 cial structures and surface stabilization by atomic layer deposition, have led to improved charge-sep
130 gn realized by employing templating based on atomic layer deposition makes the material about 10 time
131           Using ZnO thin films deposited via atomic layer deposition, MOF patterns are obtained on pr
132 ) cores and thin layers of TiO2 deposited by atomic layer deposition (nanoITO/TiO2).
133 d on copper (I) oxide (Cu2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3
134  high-pressure O(2) synthesis and subsequent atomic layer deposition of a unique ultrathin Li(x)Al(y)
135                                              Atomic layer deposition of Al(2)O(3) on the nanoparticul
136                                              Atomic layer deposition of Al(2)O(3) prevents NC aggrega
137                          This is achieved by atomic layer deposition of aluminum oxide on Ag NCs and
138                                       We use atomic layer deposition of amorphous titanium dioxide wi
139 tion catalyst over a wide pH range (1-12) by atomic layer deposition of an overlayer of TiO2.
140                              Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotexture
141 te ultramicro- to nanoelectrode arrays using atomic layer deposition of insulating Al2O3 on conductiv
142 cross multiple cycles during plasma-enhanced atomic layer deposition of metal oxide thin films.
143 ayer proteins and Si surface, area-selective atomic layer deposition of metal oxide-based high-k mate
144                         The cathode utilizes atomic layer deposition of palladium nanoparticles on a
145 gh-aspect-ratio Si nanowires was achieved by atomic layer deposition of Pt nanoparticles.
146                     The plates are formed by atomic layer deposition of ultrathin alumina films on a
147 ne-third of a monolayer of tungsten grown by atomic layer deposition on a hematite alpha-Fe(2)O(3)(00
148 HfO(2)), a fluorite-structure oxide grown by atomic layer deposition on silicon.
149        Copper oxide clusters synthesized via atomic layer deposition on the nodes of the metal-organi
150 volution, Ru nanoparticles were deposited by atomic layer deposition onto TiSi2 nanonets.
151 ting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) foll
152     In this work, we combine plasma-enhanced atomic layer deposition (PE-ALD) and density functional
153 dimensional buffer layer for plasma enhanced atomic layer deposition (PE-ALD) of Al(2)O(3) on graphen
154 for zinc oxide nanoparticle growth using the atomic layer deposition precursor diethyl zinc.
155 oatings (4 to 143 nanometers thick) grown by atomic layer deposition prevent corrosion, have electron
156         In this paper, we applied a modified atomic layer deposition procedure that is able to passiv
157                                  By using an atomic layer deposition process to grow a dielectric fil
158 revent the growth of TiO(2) film in the next atomic layer deposition process.
159 mic layers were fabricated using an in vacuo atomic layer deposition process.
160                                          The atomic-layer deposition process affords gate insulators
161 h a monolithic, CMOS-compatible and scalable atomic-layer deposition process.
162 umventing the need for complex and expensive atomic layer deposition processes.
163                 The SnO(x), prepared through atomic layer deposition, serves as a durable inorganic e
164 contrasts with copper/tin-oxide prepared via atomic layer deposition since it yields selectivity towa
165                Nanostructures prepared by an atomic layer deposition/sulfurization process facilitate
166                             Here, a modified atomic layer deposition technique was developed to achie
167            This study employs kilogram-scale atomic layer deposition technology to construct zinc oxi
168                        We demonstrate, using atomic layer deposition, that the networks can serve as
169 ee-dimensional colloidal nanolithography and atomic layer deposition, the process can be scaled for l
170 e can be deposited in a controlled manner by atomic layer deposition, they show excellent interface p
171         Overall, this work demonstrates that atomic layer deposition TiO(2) films on silicon photoele
172 imple solid state diffusion method utilizing atomic layer deposition to controllably alter the compos
173                   Here, we report the use of atomic layer deposition to fabricate arrays of metal-ins
174  vertically aligned Si nanowires (NWs) using atomic layer deposition to form a dual-absorber system.
175                                      We used atomic layer deposition to grow In(2)O(3) over Pt/Al(2)O
176                                       We use atomic layer deposition to modify Rh nanoparticles with
177 e a gradient area-selective deposition using atomic layer deposition to overcome the inherent limitat
178 we prepared thin film hematite electrodes by atomic layer deposition to study the photoelectrochemica
179 ding colloidal self-assembly, sputtering and atomic layer deposition, to fabricate photonic structure
180           In the second step of the process, atomic layer deposition was utilized to deposit conforma
181                           In this work using atomic layer deposition we deposited a pinhole free nano
182 thod and a novel process for manganese oxide atomic layer deposition, we produced manganese-doped rut
183 sizing supported bimetallic nanoparticles by atomic layer deposition, where monometallic nanoparticle

 
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