ライフサイエンスコーパス: band gap

1 e mid-gap states, creating deep traps in the band gap.

2 ing energetically within the GaP host matrix band gap.

3 ice, leading to progressive reduction of the band gap.

4 d in the conjugated backbone to modulate the band gap.

5 Coulomb force-independent of its electronic band gap.

6 actical performance is hampered by the large band gap.

7 charge-balanced semiconductor with a narrow band gap.

8 avior is due to a conventional semiconductor band gap.

9 n of shift currents for frequencies near the band gap.

10 ess-dependent quantum confinement on the NPL band gap.

11 rised by the presence of wide sub-wavelength band gap.

12 surements revealing the expected tunable ABC band gap.

13 electrically tunable subwavelength-frequency band gap.

14 on of thin Hg(x)Cd(1-x)S shells with a small band gap.

15 larger the Pb-Br-Pb angle, the narrower the band gap.

16 of ZnO-rGO matrix having low electrochemical band gap.

17 nce quantum yield (PLQY) and tunable optical band gap.

18 nd convergence and simultaneously narrow the band gap.

19 p while (4AMP)(MA)Pb(2)Br(7) has the largest band gap.

20 have somewhat smaller but still significant band gaps.

21 ased heterostructures with complete photonic band gaps.

22 t have the disadvantage of excessively large band gaps.

23 bit ultra-wide normalized all-angle all-mode band gaps.

24 hey often suffer from short lengths and wide band gaps.

25 However, its small fundamental band gap (0.7 eV) limits its applications as a solar ene

26 ested in these COFs in significantly reduced band gap (1.8-2.2 eV), solid state luminescence and reve

27 ptoelectronic properties of Sn-Pb mixed, low-band gap (~1.25 electron volt) perovskite films.

28 ical CZTS nanoparticles of size 15-16 nm and band gap 2.65 eV have been synthesized by colloidal hot

29 ical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~

30 elax one of the photoelectrode criteria, the band gap, a promising strategy involves complementing th

31 provement making selenium an attractive high-band-gap absorber for multi-junction device applications

32 urther if the solar cells could use narrower-band gap absorbers (1.2-1.4 eV).

33 The recent surge of interest towards high-band gap absorbers for tandem applications led us to rec

34 eover, the deformed graphene could exhibit a band-gap, allowing an exponential change in the source-d

35 bic (Ibam) accompanied by a red shift in the band gap and a quench in the photoluminescence emission.

36 rons may significantly exceed photon energy, band gap and electron affinity and can dominantly drive

37 lar, there is currently no consensus for the band gap and electronic structure of ST12-Ge (tP12, P432

38 erformance photoelectrode, including a small band gap and favourable cost, optoelectronic properties,

39 The optical band gap and flat band potential of the photoelectroacti

40 Thanks to the inherent wide band gap and high mobility in the 2D plane, covalent org

41 However, loss of extra energy beyond band gap and light reflection in particular wavelength r

42 engineering strategy in order to reduce the band gap and maximize the photocatalytic activity.

43 active for their low-cost synthesis, tunable band gap and potentially high power conversion efficienc

44 ature, and the temperature dependence of the band gap and spin-orbit splitting of the valence band.

45 ys (chlorine, bromine, iodine) to tailor the band gap and stabilize the semiconductor under illuminat

46 aphene, TMDs have the advantage of a sizable band gap and strong spin-orbit coupling.

47 acterization revealed a change in the energy band gap and the appearance of a weak blue luminescence

48 be isolated from the pigment's very intense band gap and trap state emission by employing a multispe

49 utline a strategy to systematically tune the band gap and valence and conduction band positions of me

50 mobility, ready electron transport, sizeable band gaps and ease of hybridisation, they are set to bec

51 We attribute the continuous tuning of both band gaps and electrical conductivity to changes in free

52 protonated amidinium salts leads to narrower band gaps and to drastically lower LUMO energies.

53 rous halides, characterized by a direct wide band-gap and a good lattice matching with Si, is an intr

54 which also indicates the presence of a small band-gap and thus non-metallic or molecular-like behavio

55 ectronic properties stemming from the direct band-gap and valley degeneracy.

56 ansmittance, high carrier mobility, suitable band gap, and easy fabrication via low-temperature metho

57 ambiguities in basic properties, such as the band gap, and the electronic defect densities in the bul

58 a: see text], the magnetic ground state, the band gap, and the Fermi level could be manipulated by va

59 commodates up to 75 % In(III) with increased band gap, and up to 37.5 % Sb(III) with reduced band gap

60 roduce the non-linear conduction, an optimum band gap, and with nitrogen or carbon alloying, a suffic

61 ependent data show detailed evolution of the band-gap, approaching a direct band-gap state.

62 their stability and identify candidates with band gaps appropriate for optoelectronic applications.

63 Both the ionization energy and optical band gap are found to follow closely the quantum confine

64 Metamaterials with acoustic and elastic band gaps are of great interest to scientists and engine

65 up to 4.2 +/- 1.8% for shifts of the optical band gap as large as 106 meV.

66 he study revealed a gradual narrowing of the band gap at increasing temperature in Bi-Sb alloy for th

67 Although we find the presence of bulk band gaps at the [Formula: see text] and X-symmetry poin

68 and thermal stability), and band structure (band gap, band edges/band edge offsets, and Fermi level)

69 ave direct or nearly direct (within 100 meV) band gaps between 1 and 3 eV, as computed with hybrid de

70 rise to wave trapping effect near the lower band gap boundary.

71 ucting ABC configuration with a gate-tunable band gap, but the latter has only been produced by exfol

72 e latter deviate from the (apparent) optical band gap by hundreds of millielectronvolts, and that the

73 e integrated trap density (D(it)) across the band gap by nearly 1 order of magnitude in Al(2)O(3) (<6

74 ing, and the ability to selectively tune the band gap by varying the M(I) and M(III) cations along wi

75 undaries are associated with locally reduced band gaps (by up to 3 eV).

76 solution-processed quantum wells wherein the band gap can be tuned by varying the perovskite-layer th

77 The band gap can be tuned from 1.81 eV to 1.42 eV without lo

78 Their band gaps can be tuned from 1.6 to 2.3 eV, by changing t

79 hat the (direct) Gamma-character of the GeSn band gap changes continuously with alloy composition and

80 Engineering the band gap chemically by organic molecules is a powerful t

81 the concomitant observation of a continuous band gap closure, indicative of a transformation into a

82 h is associated with the p-d charge-transfer band gap closure, maintains the localization of 3d elect

83 antum yield at excitation energy above twice band gap could indicate a quantum cutting due to the low

84 n transition from localization behavior to a band gap crossing an intermediate regime dominated by tu

85 FT) calculations indicate an indirect-direct band-gap crossover composition when x > 0.50.

86 tive lead sulfoiodide (Pb(5)S(2)I(6)) as low band gap crystal, which hydrothermally synthesized rapid

87 This 1.7 eV band gap decreases to 0.3 eV at 65 GPa.

88 fy their possible origin, we used the GaAsBi band gap diagram to correlate their activation energies

89 red LUMO levels (down to -4.49 eV), narrowed band gaps (down to 1.81 eV), and high molar absorptiviti

90 ally exist in semimetals without exploitable band gaps due to their accidental band-crossing origin.

91 ained and exhibits a continuously increasing band gap during decompression.

92 t of (alphahnu)(2) versus energy, the direct band gap E(g) of PbPdT thin films was calculated as 3 eV

93 ed with this method is highly pure and has a band gap (E(g) ) close to 1.4 eV, a lower value than tha

94 We identified the band gap Eg and phonon cut-off frequency omegamax as the

95 The band gap emission of fabricated nanoshells, ranging from

96 The lifetime of this sub-band-gap emission exceeds that of the excitonic transiti

97 be suspended for the hybrids containing low band gap emissive metal halide species, such as SbCl(5)

98 usters predict the inverse dependence of the band gap energies on sp(2) cluster size.

99 The band-gap energies of the colloids were found to increase

100 emical reactivity coupled with their tunable band gap energy can render the vertical 2D MoS2 unique o

101 tend toward a band structure with a limiting band gap energy of 0.669(6) eV.

102 lates exhibit a direct band structure with a band gap energy of 2.394 eV at 7 K and an estimated free

103 hiometry and consequently a reduction in the band gap energy of the perovskite phase.

104 nergy of ~0.41 eV in good agreement with the band gap energy of ZB InAs and significantly lower than

105 properties: metal/insulator classification, band gap energy, bulk/shear moduli, Debye temperature an

106 based on their excitation energy, diameter, band gap energy, chiral angle, and metallicity.

107 noscale electronic junctions can be tuned by band gap engineering as exemplified by various pristine

108 nd gap within most known double perovskites, band-gap engineering provides an important approach for

109 Using Cs2 AgBiBr6 as host, band-gap engineering through alloying of In(III) /Sb(III

110 re presented to understand the nature of the band gap evolution.

111 at both atomic and mesoscale levels with the band-gap evolution through a pressure cycle of 0 <--> 17

112 At near band gap excitation, the O3s path leads to the generatio

113 Here, we report an associative zinc oxide band-gap excitation and copper plasmonic excitation that

114 lower propagation losses, the presence of a band gap for light propagating in the crystal-slab plane

115 Pmn2(1) space group and possesses an optimal band gap for single junction solar cells; however, the s

116 3.7% we observe a giant bowing of the direct band gap ([Formula: see text]) and valence band spin-orb

117 The largest band gap found is based on 3D Weaire-Phelan foam, a stru

118 in a change of the nature of the fundamental band gap from indirect to direct.

119 Our theorem explains how GKS band gaps from metageneralized gradient approximations (

120 explore the fluorescence properties of zero-band-gap graphene.

121 The photonic band gap has a maximal size of 16.9% (at a volume fracti

122 dimensional materials naturally possessing a band gap has sparked enormous interest.

123 Magnetic oxide semiconductors with wide band gaps have promising spintronic applications, especi

124 Because of its ideal band gap, high density and high electron mobility-lifeti

125 ed halide hybrid perovskites possess tunable band gaps, however, under illumination they undergo phas

126 s largely dictated by three key aspects: (i) band gap; (ii) absolute potentials of the conduction ban

127 mical composition of the pillars affects the band gap in a lesser extent by introducing additional st

128 unlike silicon, the nature of the transport band gap in CNTs is not fully understood.

129 In this work we study the nature of the band gap in GeSn alloys for use in silicon-based lasers.

130 several schemes for inducing a semiconductor band gap in graphene have been explored.

131 Density functional theory suggests that the band gap in the insulating state is reduced by pressure

132 ation, while at the same time have isotropic band gaps in another frequency range.

133 Tailoring electronic band gaps in coupled heterostructures would permit contr

134 n lower disparity and strong superconducting band gaps in the dominant crystal regions, which lead to

135 ayers of MoSe2, our data suggest that direct band-gap in MoSe2 can be achieved if a strong electric f

136 r(S)-content in chrome yellow increases, the band gap increases.

137 VD MoS2 provides scalable access to a direct band gap, inorganic, stable and efficient emitter materi

138 Hexagonal boron nitride is a large band-gap insulating material which complements the elect

139 s at the nanoscale and show in-depth how the band gap is affected by a shift of the valence band edge

140 erial, and that the existence of the optical band gap is attributed to the highest occupied molecular

141 Moreover, the narrowed band gap is partially retainable after releasing pressur

142 sublattices, leading to materials with small band gaps, large exciton binding energies, and absorptio

143 nI2 vacancies is created resulting in larger band gap, larger unit cell volume, lower trap-state dens

144 1.5 GPa, emission can be triggered by above-band gap laser irradiation, accompanied by a color chang

145 - and bi-layer WSe2 which locally modify the band-gap, leading to efficient funnelling of excitons to

146 Owing to the decreased band gap, lower d-band center, and smaller hydrogen adso

147 atically recovers the trends in the observed band gaps, magnetic moments, type of magnetic and crysta

148 Its high mobility and the moderate band gap make it very promising for many applications.

149 at flame-formed CNPs behave like an indirect band gap material, and that the existence of the optical

150 Simulation results indicate that among wide band gap materials 4H-SiC and diamond are two optimal se

151 The resulting low band gap materials exhibit favorable inter- and intramol

152 r devices is tied to the development of wide band gap materials with excellent transport properties.

153 w mixed Pb/Sn perovskites in achieving ideal band gap materials with higher chemical stability and lo

154 Optically active defects in wide band gap materials, for instance, are critical constitue

155 od mobility have been big challenges in wide band gap materials.

156 The optical band gaps measured for these compounds are highly tunabl

157 The optical band gaps, measured both in situ and ex situ on the CNPs

158 Wide-band gap metal halide perovskites are promising semicond

159 dwidth widens; for high disorder levels, the band gap mistuning annihilates the overall attenuation.

160 d solutions that span the indirect to direct band-gap modification which exhibit tailorable optical p

161 uced band gap; that is, enabling ca. 0.41 eV band gap modulation through introduction of the two meta

162 Moreover, the band gap narrowed from the starting 2.61 eV to 2.19 eV a

163 In this work, remarkable band gap narrowing of Cs2 AgBiBr6 is, for the first time

164 tly enhanced for the hybrids containing wide band gap non-emissive ZnCl(4) (2-) .

165 als, in excellent agreement with the 1.65 eV band gap obtained from DFT calculations.

166 and is the highest among 2D materials with a band gap of >1 eV reported so far.

167 ctroscopy with the experimentally determined band gap of 1.1 eV.

168 onductor thin films possess a direct optical band gap of 1.24 eV, an absorption coefficient ~10(5) cm

169 ly published measurements showing a measured band gap of 1.48 eV.

170 PZ1 possesses broad absorption with a low band gap of 1.55 eV and high absorption coefficient (1.3

171 ponding to a voltage deficit of 0.37 V for a band gap of 1.55 eV.

172 A narrow band gap of 1.56 eV was extracted from a UV-Vis spectrum

173 long-lived photoluminescence, and an optical band gap of 1.6 eV.

174 ow an excitonic resonance and has an optical band gap of 1.63(3) eV, ~90 meV smaller than has been re

175 ity (7.75 x 10(-3) S cm(-1)), and an optical band gap of 1.67 eV.

176 ixed-anion semiconductor BaFMn(0.5)Te with a band gap of 1.76 eV and a work function of 5.08 eV, harb

177 niques and boasts a relatively large optical band gap of 2.15 eV.

178 ays semiconductor properties with an optical band gap of 2.4 eV.

179 omic-layer organic semiconductor with a wide band gap of 3.41 eV.

180 rough which the A-site cation influences the band gap of 3D metal halide perovskites.

181 Ga(2)O(3) has an enormous band gap of 4.8 eV, which makes it well suited for these

182 the V d (0) state significantly reduces the band gap of A 2VFeO6, making it smaller than that of ATi

183 theorem: In generalized KS theory (GKS), the band gap of an extended system equals the fundamental ga

184 ene nanoribbons (9-AGNRs) with a low optical band gap of approximately 1.0 eV and extended absorption

185 Zn-HAB is shown to have microporosity with a band gap of approximately 1.68 eV, resulting in a modera

186 incorporation in ZnO red shifted the optical band gap of as-prepared photoanodes.

187 mission ionization energy in air and optical band gap of carbon nanoparticles (CNPs).

188 sults in a bathochromic shift of the optical band gap of CdSe QDs (R = 1.17 nm) of up to 111 meV whil

189 The influence of band gap of copper nanoparticles and copper oxide nanoel

190 The easy tuneability of the band gap of CZTS by varying the cation ratio and size of

191 is a semiconductor, with an approximate bulk band gap of Delta approximately 0.5 eV, and, in its mono

192 behaves as a semiconductor with an estimated band gap of E(g) ~ 0.5 eV.

193 The band gap of EA4Pb3Br10-xClx ranges from 3.45 eV (x = 10)

194 ize ozone treatment to controllably tune the band gap of GO, which can significantly enhance its appl

195 The CPDS copolymer exhibited a band gap of just 1.18 eV, which is among the lowest repo

196 iconducting CNTs, and a 32% reduction in the band gap of narrow-gap CNTs.

197 ith Pb by element substitution increases the band gap of SnO without inducing defect states in the ba

198 pectively, and form electronic states in the band gap of SrTiO3.

199 The results showed that band gap of TC-GQD nanocomposite was shifted to visible

200 ortant factor governing the variation of the band gap of the CNPs studied.

201 onduction band, substantially decreasing the band gap of the expanded lattice.

202 ge materials and the localised states in the band gap of the glass is crucial for the development of

203 -localized electronic states within the bulk band gap of the graphene nanoribbon that hybridize to yi

204 to be nested in the smaller charge transfer band gap of the Ni-based compounds compared to that of t

205 The wide band gap of the organic cation and distinct optical char

206 or Cl 3p orbitals lowers the charge-transfer band gap of the perovskite by 0.9 eV.

207 The band gap of the single-layered materials varies from 2.4

208 However, the short length and wide band gap of these graphene nanoribbons have prevented th

209 top band of TiO(2) IOPCs overlapped with the band gap of TiO(2), and chemiluminescence emission of lu

210 ission peak lies at a higher energy than the band gap of ZnO (3.3 eV), the signal can easily be isola

211 s promising thermoelectric properties with a band gap of ~0.25 eV and ultralow lattice thermal conduc

212 broad UV-Vis absorptions and narrow optical band gaps of 1.17-1.29 eV and are p-type semiconductors

213 ium, MA = methylammonium), can exhibit ideal band gaps of 1.27-1.38 eV, suitable for the assembly of

214 ed-halide perovskite absorbers with nonideal band gaps of 1.5-1.6 eV.

215 r Z(2) topological insulators at a(LAO) with band gaps of 26 and 60 meV, respectively.

216 s Chern insulators (CI) with C = 2 and 1 and band gaps of 41 and 38 meV at the lateral lattice consta

217 and the electronegativity of the metals, the band gaps of OMCs were varied by 0.83 eV and their condu

218 The indirect band gaps of the Sn and Pb compounds are ~1.7 and 2.0 eV

219 Our results show a band-gap of the order of 1 eV, sharply contrasting some

220 e theoretical model predicting the frequency band-gaps of periodic plates with sinusoidal corrugation

221 also find very significant dependence of the band gap on the local structure.

222 Typically, when increasing the band gap, one might assume that a decrease in photoactiv

223 ong been predicted to form in proximity to a band gap opening in the underlying band structure.

224 higher values associated with the change of band gap opening mechanism.

225 urements, we demonstrate that the underlying band gap opening occurs inside the magnetic field-induce

226 eport on the continuous fine-scale tuning of band gaps over 0.4 eV and of the electrical conductivity

227 introduced in beta-Ga(2)O(3), an ultra-wide band gap oxide, by controlling hydrogen incorporation in

228 allium oxide (Ga(2)O(3)), one among the wide band gap oxides, exhibit promising oxygen sensing proper

229 lf-assembled template for isotropic photonic band gap (PBG) materials for transverse electric (TE) po

230 long-range periodicity featuring a photonic band gap (PBG) that is tunable through the superball geo

231 However, wide-band gap perovskite solar cells have been fundamentally

232 We report efficient 1.67-electron volt wide-band gap perovskite top cells using triple-halide alloys

233 The metastable metallic and small band gap phases of group VI TMDs displayed leading perfo

234 The limited number of known low-band-gap photoelectrocatalytic materials poses a signifi

235 onventional semiconductors, studies of above-band-gap photoexcitations in strongly correlated materia

236 ic Shockley-Queisser limit to generate above-band-gap photovoltage.

237 Charge excitations across an electronic band gap play an important role in opto-electronics and

238 The all-PSCs with the wide-band-gap polymer PBDB-T as donor and PZ1 as acceptor sho

239 Conjugated polymers featuring tunable band gaps/positions and tailored active centers, are att

240 lity and is a semiconductor with an indirect band gap predicted near 1.3 eV.

241 indirect band gap semiconductors with direct band gaps presenting at slightly higher energies and dis

242 the large, complete, and isotropic photonic band gaps provided by hyperuniform disordered structures

243 When combined with wider-band gap PSCs, we achieve 25% efficient four-terminal an

244 able our demonstration of >20% efficient low-band gap PSCs.

245 properties at nanoscale and small adjustable band gap ranges.

246 We find emergent properties including large band gap reduction (~0.6 eV), two-fold increase in carri

247 sed photodetectors was observed suggesting a band gap reduction as a result of the BNNSs' collective

248 e iAQM small molecules and CPEs showcase the band gap reduction effects of combining the donor-accept

249 rier, and In2Se3/WSe2, showing a significant band gap reduction in the combined system.

250 Zn-doping is larger than that of the direct band gap, reflecting a weaker hybridization between Zn 3

251 Optical band gap, resistivity, and Hall-effect measurements toge

252 of SnO without inducing defect states in the band gap retaining the anti-bonding character of the val

253 -layer tungsten disulfides (WS2) is a direct band gap semiconductor with a gap of 2.1 eV featuring st

254 th the narrow HOMO-LUMO gap, affords a small band gap semiconductor with sigmaRT = 1 x 10(-3) S cm(-1

255 ns indicate that BaFMn(0.5)Te is an indirect band gap semiconductor with the gap opening between Te 5

256 h improved the electrical properties and low band gap semiconductor.

257 roscopy, we prepared a minimal DQD in a wide band-gap semiconductor matrix.

258 of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward at

259 -In2Se3 nanosheets were found to be indirect band gap semiconductors (Eg = 1.55 eV), and single nanos

260 for multi-junction device applications.Wide band gap semiconductors are important for the developmen

261 at the supertetrahedral compounds are direct band gap semiconductors similar to binary GaAs or InAs.

262 tions reveal that the compounds are indirect band gap semiconductors with direct band gaps presenting

263 fact that it is one of the most studied wide band gap semiconductors.

264 to turn bulk and multilayer MX2 into direct band-gap semiconductors by controlling external paramete

265 Direct band-gap semiconductors play the central role in optoele

266 tructure calculations indicate that opposite band gap shift directions associated with Sb/In substitu

267 The band gap/size correlation was used to analyze the growth

268 lution of the band-gap, approaching a direct band-gap state.

269 cal conductance (a consequence of an optical band gap suitable for PV conversion) and low stability u

270 induces a spatially variant locally resonant band gap that progressively slow down the group velocity

271 dem photovoltaics, in part because they have band gaps that can be tuned over a wide range by composi

272 d gap, and up to 37.5 % Sb(III) with reduced band gap; that is, enabling ca. 0.41 eV band gap modulat

273 key parameters to be controlled include the band gap, the absolute energy position of band edges, th

274 thdrawing character, resulting in the lowest band gap, the highest stability, and the best photovolta

275 limited by the lack of high-efficiency, low-band gap tin-lead (Sn-Pb) mixed-perovskite solar cells (

276 Closure of the band gap to form an all-organic molecular metal with sig

277 iO2-S/rGO hybrid), with an aim to narrow the band gap to potentially make use of visible light and de

278 Stacking solar cells with decreasing band gaps to form tandems presents the possibility of ov

279 ars density and distribution we can tune the band gap transforming graphene from metallic to semicond

280 in contrast to the sharp indirect-to-direct band gap transition obtained in conventional alloys such

281 ions of the pyrazinium-based orbitals in the band gap transition of A(II) Pb(2) X(6) .

282 or electric field induced indirect to direct band-gap transition in bulk MoSe2.

283 sorption onsets around 2 eV, consistent with band gap tuning via cation disorder.

284 or the conduction band and can act as a fine band gap tuning.

285 confirmed from the nonmonotonic variation of band gap, unit cell volume, electrical conductivity, and

286 Lead iodide perovskites show an increase in band gap upon partial substitution of the larger formami

287 ic interaction, leading to a reduced optical band gap, varies across the series of MOFs and is a func

288 The same band gap was also measured for GTUB5 in DMSO.

289 The band gap was similar for biogenic and synthetic colloids

290 many-electron interactions induce electronic band gaps when graphene is patterned at nanometer length

291 on potential, electron affinity, and optical band gap which provides an absorption profile that has s

292 multi-redox waves with a low electrochemical band gap, which signifies the tuning of highest occupied

293 where (3AMP)(FA)Pb(2)Br(7) has the smallest band gap while (4AMP)(MA)Pb(2)Br(7) has the largest band

294 n causes colossal reduction in layered MnBDC band gap while it has no observable effect on bulk MOFs.

295 The former effect tends to raise the band gap, while the latter tends to decrease it.

296 An increase of the indirect band gap with Zn-doping is larger than that of the direc

297 a novel mechanism for emergence of multiple band gaps with extreme attenuation by coupling continuou

298 ith Floquet bands, and show that topological band gaps with non-zero Chern number can be opened by br

299 Given the generally large indirect band gap within most known double perovskites, band-gap

300 slates into a distribution of energy levels, band gaps, work functions, and other characteristics, wh