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1 ide can be used for passivation of ultrathin black phosphorus.
2 in a single-layer, two-dimensional material, black phosphorus.
3 itting diodes and photodetectors composed of black phosphorus.
4 presence of self-terminated surface bonds in black phosphorus.
5 y interfacing even-layered MnBi(2)Te(4) with black phosphorus.
6 ions donating electrons to surface layers of black phosphorus.
7 ural and electronic relatives alpha-GeSe and black phosphorus.
8 ls, like transition metal dichalcogenides or black phosphorus.
9 ive with atomically thin dichalcogenides and black phosphorus.
10 g graphene, molybdenum disulphide (MoS2) and black phosphorus.
11 o tune the electronic structure of few-layer black phosphorus.
12 ropic layered crystals, such as orthorhombic black-phosphorus.
13 armchair and zigzag crystallographic axes of black-phosphorus.
14 chemical functionalization of 2D exfoliated black phosphorus (2D BP) continues to attract great inte
15 with a tunable, direct bandgap, distinguish black phosphorus 2DEG as a system with unique electronic
18 layed a typical I-V curve similar to that of black phosphorus and a similar mobility reaching 300 cm(
19 der Waals interface of tungsten selenide and black phosphorus and realized in-plane electronic polari
21 any layered 2D crystals (including graphene, black phosphorus and versatile metal chalcogenides) can
22 at the interface of a crystalline insulator (black phosphorus) and disordered dopants (alkali metals)
23 materials, transition metal dichalcogenides, black phosphorus, and 2D metal oxides) materials, with t
25 this behaviour is intrinsic for single-layer black phosphorus, and originates from its puckered struc
30 rientation-dependent thermal conductivity of black phosphorus are useful for designing devices, as we
31 ndent bandgap tuning properties in intrinsic black phosphorus, arising from the strong interlayer ele
32 is foundational in elucidating the nature of black phosphorus as a ligand and underscores the viabili
35 10 nm thick flake of exfoliated crystalline black phosphorus as an active channel of a field-effect
37 a Sn/SnI4 catalyst mixture has provided bulk black phosphorus at much lower pressures than those requ
39 ccessful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered fro
41 modify the Lewis basic surface of few-layer black phosphorus (bP) and demonstrate its effectiveness
45 hat the inherent Cu(2+)-capturing ability of black phosphorus (BP) can accelerate the degradation of
46 is particularly intriguing in semiconducting black phosphorus (BP) due to the highly anisotropic natu
48 ly, photodetectors using van der Waals (vdW) black phosphorus (BP) flakes have demonstrated highly se
49 sotropic thermal-conductivity tensor of bulk black phosphorus (BP) for 80 </=T </= 300 K is reported.
56 e induced by oxidation-related defects in 2D black phosphorus (BP) is exploited to achieve visual mem
57 aphene (PG) surface plasmons and anisotropic black phosphorus (BP) localized surface plasmons, which
59 photoelectric, and photocatalytic effects of black phosphorus (BP) nanosheets, a BP-PAO fiber with en
61 an ultra-low contact resistance few-layered black phosphorus (BP) transistor with metallic PGex cont
65 isotropic thermal conductivity of passivated black phosphorus (BP), a reactive two-dimensional materi
68 m nitride (hBN) with a few layer phosphorene black phosphorus (BP), hBN/BP/hBN heterostructures are m
69 Fibrous Phosphorus (FP), an allotrope of black phosphorus (BP), is one of the most promising cand
70 ion metal dichalcogenides (e.g., MoS2, WS2), black phosphorus (BP), metal nanosheets and two-dimensio
71 interaction and ease of oxidation issues of black phosphorus (BP), the domain size of artificial syn
73 emission spectral distributions of monolayer black phosphorus (BP), which are governed by the symmetr
80 , an injectable dual-network hyaluronic acid/black phosphorus (BP)/ fibroblast growth factor 21 (FGF2
81 plane anisotropy of a flexible thin flake of black-phosphorus (BP), we devise plasma-wave, thermoelec
87 y barrier heights for electrons and holes in black phosphorus devices for a large range of body thick
88 ), while the previously known alpha form and black phosphorus display the more common chair conformat
89 on of a widely tunable band gap in few-layer black phosphorus doped with potassium using an in situ s
93 d materials, namely molybdenum disulfide and black phosphorus field effect transistors (FETs), as a c
94 PPs, at THz frequencies, in hBN-encapsulated black phosphorus field effect transistors through THz ne
96 tio is found to be approximately 2 for thick black phosphorus films and drops to approximately 1.5 fo
98 ly 20 and approximately 40 W m(-1) K(-1) for black phosphorus films thicker than 15 nm, respectively,
99 ain size of artificial synthesized few-layer black phosphorus (FL-BP) crystals is often below 10 um,
105 lack phosphorene (BP, monolayer or few-layer black phosphorus) has gained much attention in various f
107 approach starting from a few layers of bulk black phosphorus, have failed to produce reliably precis
109 No superconductivity could be achieved for black phosphorus in its normal orthorhombic form, despit
110 D semiconductors including MoS(2), InSe, and black phosphorus in monolayer form, and is the highest a
114 ctrochemical unzipping of single crystalline black phosphorus into zigzag-phosphorene nanobelts, as w
121 anopatterning and layer-by-layer thinning of black phosphorus is demonstrated with conductive atomic-
124 he surface carrier recombination velocity of black phosphorus is two orders of magnitude lower than t
125 ic TBR across a prototype 2D material, i.e., black phosphorus, is reported through a crystal-orientat
126 ional semiconductors such as atomically thin black phosphorus, is significantly affected by the elect
128 opposite potentials on the opposite ends of black phosphorus macroparticles thereby leading to its d
130 values fall between those of alpha-GeSe and black phosphorus, making beta-GeSe a promising candidate
132 thermal conductivity of suspended few-layer black phosphorus measured by micro-Raman spectroscopy.
133 rated SKMs with electrically tunable bipolar black phosphorus-molybdenum disulfide (bP-MoS(2)) photod
134 representative 2D materials (e.g., graphene, black phosphorus, MoS(2), h-BN, WS(2), MoSe(2), and WSe(
139 plane thermal conductivity of single-crystal black phosphorus nanoribbons along the zigzag and armcha
140 on nickel-iron layered double hydroxide with black phosphorus nanosheets (AuNP/Ni-Fe LDH/BPNSs) compo
143 r the surface functionalization of few-layer black phosphorus nanosheets using a family of photolytic
144 c basal-plane thermal conductivities of thin black phosphorus obtained from a new four-probe measurem
145 le, we trace back to the research history on black phosphorus of over 100 years from the synthesis to
146 pectroscopy reveals dark exciton dynamics of black phosphorus on ~100 fs time scale and its anisotrop
148 nsor based on porous graphene functionalized black phosphorus (PG-BP) composite to detect of leptin.
150 the operational wavelength range of tunable black phosphorus photonic devices, but also pave the way
151 Our results, coupled with the fact that black phosphorus possesses anisotropic energy bands with
153 platform for printed devices.Atomically thin black phosphorus shows promise for optoelectronics and p
155 er Waals materials- molybdenum disulfide and black phosphorus, their electrically tunable photorespon
156 e been developed for scalable exfoliation of black phosphorus, these techniques have thus far used an
157 r measurements indicate that PMMA passivated black phosphorus thin film flakes can stay pristine for
158 the free-carrier to excitonic transition in black phosphorus thin films, and differs from the behavi
160 der Waals layered materials using tri-layer black phosphorus (TLBP) integrated in a Fabry-Perot cavi
162 te a broadband photodetector using a layered black phosphorus transistor that is polarization-sensiti
163 .365 kOmegamum, which is the lowest value in black phosphorus transistors without degradation of ION/
165 pic and strongly bound excitons in monolayer black phosphorus using polarization-resolved photolumine
167 ize a parity-forbidden dark exciton state in black phosphorus while maintaining its intrinsic materia
168 escence quantum yield at room temperature in black phosphorus while measuring the various radiative a
169 d study of mechanically exfoliated few-layer black phosphorus, with thickness ranging from 2 to 15 la