ライフサイエンスコーパス: boron nitride

1 as well as on exfoliated flakes of hexagonal boron nitride.

2 superhard materials such as diamond or cubic boron nitride.

3 wisted bilayer graphene aligned to hexagonal boron nitride.

4 er graphene placed on a crystal of hexagonal boron nitride.

5 m comprising graphene stacked atop hexagonal boron nitride.

6 ribute to defects within the bulk insulating boron nitride.

7 n of defect phenomena in the underlying bulk boron nitride.

8 th both occurring naturally within hexagonal boron nitride.

9 inert, atomically smooth sheet of hexagonal boron nitride.

10 lasmons in graphene and phonon polaritons in boron nitride.

11 bilayers graphene encapsulated by hexagonal boron nitride.

12 resentative van der Waals crystal, hexagonal boron nitride.

13 edge states of graphene and the polarity of boron nitride.

14 ween channels made of graphene and hexagonal boron nitride.

15 f high-quality BLG encapsulated in hexagonal boron nitride.

16 electrics(5-9) or encapsulation in hexagonal boron nitride(10), have yielded limited success at room

17 on metal dichalcogenide(10,11) and hexagonal boron nitride(12) sandwich structures (also known as ato

18 Crystalline 2D hexagonal boron nitride (2D-hBN) nanosheets are explored as a pote

19 nts demonstrating that crystals of hexagonal boron nitride, a natural mid-infrared hyperbolic materia

20 The ABC-trilayer graphene/hexagonal boron nitride (ABC-TLG/hBN) moire superlattice provides

21 hosphorene and bismuthene), carbon nitrides, boron nitrides along with transition metal carbides and

22 tride, making it possible to produce uniform boron nitride and boron carbonitride structures without

23 mic layer structures consisting of graphene, boron nitride and boron carbonitride.

24 y favored CO2 Here, we report that hexagonal boron nitride and boron nitride nanotubes exhibit unique

25 yers are fully encapsulated within hexagonal boron nitride and electrically contacted in a multi-term

26 es from graphene encapsulated with hexagonal boron nitride and few-layer graphite.

27 nal interface has been realized in hexagonal boron nitride and graphene planar heterostructures, wher

28 ort in graphene, and charge transfer between boron nitride and graphene.

29 of bubbles formed by monolayers of graphene, boron nitride and MoS2.

30 emical properties of hole- and edge-enriched boron nitride and other 2D nanosheets, paving the way to

31 limited to, conducting graphene, insulating boron nitride and semiconducting transition metal dichal

32 y the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-res

33 rising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono-

34 two-dimensional materials, such as graphene, boron nitride and transition metal dichalcogenides, have

35 sional layers, including graphene, hexagonal-boron nitride and transition-metal dichalcogenides (MX2)

36 king metallic graphene, insulating hexagonal boron nitride and various semiconducting monolayers into

37 ulus of 348 GPa, comparable to that of cubic boron nitride, and a Vickers hardness of 20 GPa, which i

38 Brx), incorporating GaN, monolayer hexagonal boron nitride, and graphene aerogel.

39 ogenide, graphitic carbon nitride, hexagonal boron nitride, and phosphorene) are emerging extraordina

40 ct-free monolayers of graphene and hexagonal boron nitride are surprisingly permeable to thermal prot

41 Graphene and hexagonal boron nitride are typical conductor and insulator, respe

42 These observations assert hexagonal boron nitride as a promising platform for studying novel

43 With the discovery of hexagonal boron nitride as an ideal dielectric, the materials are

44 nsional layers such as graphene or hexagonal boron nitride as tunnel contacts on nanowires offers man

45 t defects emerging in graphene and hexagonal boron nitride, as probed by atomically resolved electron

46 mi level depending on the termination of the boron nitride at the boundary, and are extended along bu

47 These hexagonal boron nitride atomic layer coatings, which can be synthe

48 We demonstrate that graphene and boron nitride bands do not interact over a wide energy r

49 onant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwi

50 o the emergence and development of hexagonal boron nitride, black phosphorus, and transition metal di

51 changes in cell stiffness and adhesion upon boron nitride (BN) and hydroxyapatite (HAP) nanoparticle

52 growth of single-crystal layers of hexagonal boron nitride (BN) and molybdenum disulfide (MoS(2)) cry

53 One of the low-dimensional Boron Nitride (BN) forms, namely, cubic-BN (c-BN) nanodo

54 ct of the quadratic NLO properties of hybrid boron nitride (BN) graphene flakes is opened up.

55 actuator made of carbon nanotubes (CNTs) and boron nitride (BN) is developed that can withstand high

56 y pass through interlayer spaces in hydrated boron nitride (BN) membranes.

57 oclusters (~1.5 nm) deposited on defect-rich boron nitride (BN) nanosheet (Ni/BN) catalysts with high

58 udy of the adsorption of CO2, CH4, and H2 on boron nitride (BN) nanosheets and nanotubes (NTs) with d

59 Atomically thin boron nitride (BN) nanosheets are important two-dimensio

60 One is the root growth mode, in which boron nitride (BN) species formed via the surface intera

61 t of 5 bisphenol derivatives using hexagonal boron nitride (BN) was developed.

62 Disordered structures of boron nitride (BN), graphite, boron carbide (BC), and bo

63 based on graphene-like 2D materials, such as boron nitride (BN), graphite-carbon nitride (g-C3N4), tr

64 raphene encapsulated between two crystals of boron nitride (BN), in which the rotational alignment of

65 d the current scope limited to the graphene, boron nitride (BN), zinc oxide (ZnO) and molybdenum sulf

66 posed of either natural boron (B) or natural boron nitride (BN).

67 irst-principles theory study of the graphene-boron nitride boundary to provide a first glimpse into t

68 entation shear strength in nanotwinned cubic boron nitride by bond rearrangement at the twin boundary

69 eported a substantial strengthening of cubic boron nitride by nanotwinning.

70 plied to obtain synthetic diamonds and cubic boron nitride (c-BN), which are the superhard abrasives

71 that atomically thin graphene and hexagonal boron nitride can be used for passivation of ultrathin b

72 We show that monolayers of graphene and boron nitride can be used to separate hydrogen ion isoto

73 at hyperbolic phonon polaritons in hexagonal boron nitride can overcome this fundamental trade-off.

74 s of phonon polaritons launched in hexagonal boron nitride capping layers via its interaction with th

75 We grew cubic boron nitride (cBN) crystals with controlled abundance o

76 d with the higher thermal stability of cubic boron nitride (cBN) have broad potential value in scienc

77 ll inspire studies on carbyne, cumulene, and boron nitride chains for their practical deployments in

78 t is observed in both graphite and hexagonal boron nitride channels but exhibits marked material-depe

79 d by metallic disks underneath the hexagonal boron nitride crystal.

80 anically self-rotating towards the hexagonal boron nitride crystallographic directions.

81 lamellar compounds by synthesizing hexagonal boron nitride crystals with nearly pure boron isotopes (

82 bilayer graphene with the top and/or bottom boron nitride crystals), we observe prominent and robust

83 harge and energy-level information for these boron nitride defect structures.

84 e heterostructures, separated by a hexagonal boron nitride dielectric.

85 als and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specific

86 pothesis in which oxygen-terminated armchair boron nitride edges are proposed to be the catalytic act

87 optical excitation of defect transitions in boron nitride, electrical transport in graphene, and cha

88 ructures consisting of dual-gated, hexagonal-boron-nitride-encapsulated bilayer graphene.

89 After dry transfer and boron nitride encapsulation, it shows room-temperature e

90 de (MoS2), niobium diselenide, and hexagonal boron nitride exfoliated onto a weakly adherent substrat

91 chanically exfoliated graphene and hexagonal boron nitride exhibit perfect Nernst selectivity such th

92 We show that such ultrathin hexagonal boron nitride films are impervious to oxygen diffusion e

93 re we report three-nanometre-thick amorphous boron nitride films with ultralow kappa values of 1.78 a

94 ed polymers for soft matters and a hexagonal boron nitride flake for two-dimensional materials.

95 in single-layer graphene sandwiched between boron nitride flakes.

96 ormance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flex

97 uctor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-eff

98 with resistivity values similar to those of boron nitride grown by chemical vapour deposition.

99 conductivity in exfoliated bilayer hexagonal boron nitride h-BN that was measured using suspended pre

100 Hexagonal boron nitride (h-BN) and boron nitride nanotubes (BNNT)

101 of several such materials such as hexagonal boron nitride (h-BN) and dichalcogenides are examples th

102 bonding, the soft, graphite-like, hexagonal boron nitride (h-BN) and its superhard, diamond-like, cu

103 fined pit/hole shapes and edges on hexagonal boron nitride (h-BN) basal plane surfaces via oxidative

104 s for the large-scale synthesis of hexagonal boron nitride (h-BN) by chemical vapour deposition (CVD)

105 Ultrasmooth hexagonal boron nitride (h-BN) can dramatically enhance the carrie

106 Herein, hexagonal boron nitride (h-BN) films are prepared from chemical va

107 cently, the van der Waals material hexagonal boron nitride (h-BN) has emerged as a robust host for qu

108 Although hexagonal boron nitride (h-BN) has recently been identified as a h

109 Graphene and hexagonal boron nitride (h-BN) have similar crystal structures wit

110 pattern in highly aligned graphene/hexagonal boron nitride (h-BN) heterostructures is a lateral super

111 Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized o

112 Many emerging applications of hexagonal boron nitride (h-BN) in graphene-based nanoelectronics r

113 heterostructures with graphene and hexagonal-boron nitride (h-BN) inks, and use them to fabricate all

114 The controlled exfoliation of hexagonal boron nitride (h-BN) into single- or few-layered nanoshe

115 Although hexagonal boron nitride (h-BN) is a good candidate for gate-insula

116 Hexagonal boron nitride (h-BN) is a natural hyperbolic material, i

117 Hexagonal boron nitride (h-BN) is an appealing substrate, because

118 Hexagonal boron nitride (h-BN) is an insulating compound that is s

119 In this work, 2D monolayer hexagonal boron nitride (h-BN) is exploited as an ultrathin decora

120 Hexagonal boron nitride (h-BN) is known as promising 2D material w

121 ing of aerogels and membranes from hexagonal boron nitride (h-BN) is much more difficult than from gr

122 Hexagonal boron nitride (h-BN) is regarded as a graphene analogue

123 line structure at the edges of the hexagonal boron nitride (h-BN) nanosheets, and (3) the basic elect

124 e layers reinforced with conformal hexagonal boron nitride (h-BN) platelets.

125 supported on a weakly-interacting hexagonal boron nitride (h-BN) substrate are computed using densit

126 d by placing a graphene layer on a hexagonal boron nitride (h-BN) substrate.

127 Using hexagonal boron nitride (h-BN) to disperse the NPs doubles DNP enh

128 Graphene/hexagonal boron nitride (h-BN) vertical heterostructures have rece

129 l vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmiss

130 ication of individual nanopores in hexagonal boron nitride (h-BN) with atomically precise control of

131 ing (NVRS) phenomenon in monolayer hexagonal boron nitride (h-BN), a typical 2D insulator, is reporte

132 ostructure comprising graphene and hexagonal boron nitride (h-BN), and show that ssDNA can be stretch

133 sic and doped graphene, as well as hexagonal boron nitride (h-BN), controlled fabrication of lateral

134 Two-dimensional (2D) hexagonal boron nitride (h-BN), which has a similar honeycomb latt

135 encapsulated between two films of hexagonal boron nitride (h-BN).

136 ical material system--graphene and hexagonal boron nitride (h-BN).

137 interesting physical properties in hexagonal boron nitride (h-BN).

138 0 nuclear spins in atomically thin hexagonal boron nitride (h-BN).

139 transport measurements on graphene/hexagonal boron-nitride Hall bars and show that wider devices reve

140 Our results demonstrate that amorphous boron nitride has excellent low-kappa dielectric charact

141 Pristine graphene encapsulated in hexagonal boron nitride has transport properties rivalling suspend

142 oron-containing materials, and in particular boron nitride, have recently been identified as highly s

143 nsional (2D) materials, such as graphene and boron nitride, have specific lattice structures independ

144 ovel vdW heterostructure combining hexagonal boron nitride (hBN) and vanadium dioxide (VO(2) ).

145 Studies of hexagonal boron nitride (hBN) are also visited, highlighting the i

146 sh that monolayers of graphene and hexagonal boron nitride (hBN) are highly permeable to thermal prot

147 Monolayers of graphene and hexagonal boron nitride (hBN) are highly permeable to thermal prot

148 Hexagonal boron nitride (hBN) ceramics are expected to have wide a

149 perature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimens

150 2D hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crys

151 Hexagonal boron nitride (hBN) is drawing increasing attention as a

152 t epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temper

153 an ABC-trilayer graphene (TLG) and hexagonal boron nitride (hBN) moire superlattice.

154 igated the performance of graphene-hexagonal Boron Nitride (hBN) multilayer structure (hyper crystal)

155 uccessful effort to grow in situ a hexagonal boron nitride (hBN) nanocoating on a stainless-steel wir

156 phononic metasurface, a grating of hexagonal boron nitride (hBN) nanoribbons.

157 oparticles (Ag@AuNPs) incorporated hexagonal boron nitride (HBN) nanosheets and molecularly imprinted

158 ul growth of MoSe2 on single-layer hexagonal boron nitride (hBN) on the Ru(0001) substrate using mole

159 an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the range of key opto-elect

160 insulating van der Waals layer of hexagonal boron nitride (hBN) provides an excellent interface diel

161 negligibly on alkyl-terminated and hexagonal boron nitride (hBN) surfaces, as shown by Raman spectros

162 contact through an atomically thin hexagonal boron nitride (hBN) tunnel barrier.

163 6) and thickness of the insulating hexagonal boron nitride (hBN)(7,8) used to encapsulate the graphen

164 ted from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spect

165 Among these materials, layered hexagonal boron nitride (hBN), with its wide bandgap energy ( appr

166 map the local theta variations in hexagonal boron nitride (hBN)-encapsulated MATBG devices with rela

167 ngle atomic layers and bilayers of hexagonal boron nitride (hBN).

168 ime through isotopic enrichment of hexagonal boron nitride (hBN).

169 ed after adding natural fiber into hexagonal boron nitride (hBN)/epoxy composites.

170 We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enabl

171 trate a device in which a graphene/hexagonal boron nitride heterostructure is suspended over a gold n

172 ns the high carrier mobility of the graphene/boron nitride heterostructure, thus resembling the modul

173 We overcome this problem by using a graphene/boron nitride heterostructure, which exploits the atomic

174 optical and electrical responses of graphene/boron nitride heterostructures, including optical excita

175 monolayer graphene and multilayer hexagonal boron nitride heterostructures, we discuss the potential

176 In particular, graphene/boron-nitride heterostructures have emerged as a very pr

177 f an intrinsic bandgap in epitaxial graphene/boron-nitride heterostructures with zero crystallographi

178 field of 9 T at 300 K in few-layer graphene/boron-nitride heterostructures.

179 titanate, whose mobility when protected with boron nitride improves more than 10-fold while achieving

180 electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonan

181 te isotropically over graphene and hexagonal boron nitride in the plane, leaving limited degrees of f

182 ative defects in an intrinsic bulk hexagonal boron nitride insulator can be characterized and manipul

183 on polaritons in isotopically pure hexagonal boron nitride interacting with the surrounding dielectri

184 A hybrid filler boron nitride-iron oxide (BN-F) composed of Fe(3)O(4) an

185 Hexagonal boron nitride is a large band-gap insulating material wh

186 Hexagonal boron nitride is a model lamellar compound where weak, n

187 Hexagonal boron nitride is a two-dimensional layered material that

188 rared, natural hyperbolic material hexagonal boron nitride is an attractive alternative.

189 oxidation of atomically thin two-dimensional boron nitride is studied.

190 ntaining aluminium and silicon as well as of boron nitrides, it is explained how the nanocomposites w

191 graphene layers coated with a few hexagonal boron nitride layers are also protected at similarly hig

192 resistant coatings of high-quality hexagonal boron nitride layers with controlled thicknesses from do

193 In coupled graphene-graphene and graphene-boron nitride layers, interesting physical phenomena ran

194 encapsulation of graphene between hexagonal boron nitride layers, one-dimensional edge contacts and

195 heterostructures consisting of graphene and boron nitride layers.

196 er graphene sandwiched between two hexagonal boron nitride layers.

197 In hexagonal boron nitride, low-loss infrared-active phonon-polariton

198 the hexagonal carbon lattice of graphene to boron nitride, making it possible to produce uniform bor

199 from structured polymer film, to polaritonic boron nitride materials, to isolated bacterial peptidogl

200 iquids, such as those (e.g., carbon nitride, boron nitride, metal-organic frameworks, covalent organi

201 eter-thin molybdenum disulfide and hexagonal boron nitride microcrystals, the most-promising van der

202 composed of interconnected hollow hexagonal boron nitride microtubes with nanoscopic wall-thickness,

203 ABC-stacked trilayer graphene/hexagonal boron nitride moire superlattice (TLG/hBN) has emerged a

204 d-bilayer graphene and ABC trilayer graphene/boron nitride moire superlattices(1-4).

205 rn can emerge in different types of graphene/boron nitride moire superlattices, whereas correlated in

206 electronic ordering in the bilayer graphene/boron nitride moire system.

207 titutions caused in-plane distortions in the boron nitride monolayer of about 0.1 A magnitude, which

208 incorporate molybdenum diselenide/hexagonal boron nitride (MoSe2/hBN) quantum wells in a tunable opt

209 sionally confined 'hyperbolic polaritons' in boron nitride nanocones that support four series (up to

210 Although the motion is restricted to the boron-nitride nanoroad, the diffusive motion is still no

211 n of all surface molecules is limited to the boron-nitride nanoroads.

212 lyldimethylammonium chloride) functionalized boron nitride nanosheets (Au-Pd NPs@BNNSs) and conjugate

213 gh quality, 2-dimensional single crystalline boron nitride nanosheets (BNNSs) at a low substrate temp

214 om restacking of liquid exfoliated hexagonal boron nitride nanosheets (BNNSs) is reported.

215 formation of defect-free, single crystalline boron nitride nanosheets (BNNSs) synthesized using pulse

216 cles assembled on vacancy-abundant hexagonal boron nitride nanosheets and their use as a model cataly

217 ocomposite incorporated with two-dimensional boron nitride nanosheets and zero-dimensional barium tit

218 omposites with silver nanoparticle-deposited boron nitride nanosheets as fillers could effectively en

219 oron nitride nanosheets to 3.06 W/m-K at the boron nitride nanosheets loading of 25.1 vol %.

220 composite with silver nanoparticle-deposited boron nitride nanosheets outperforms the one with boron

221 illed with the silver nanoparticle-deposited boron nitride nanosheets to 3.06 W/m-K at the boron nitr

222 noparticles like gold nanorods and hexagonal boron nitride nanosheets were also analyzed to demonstra

223 Boron nitride nanosheets were dispersed in polymers to g

224 o the lower thermal contact resistance among boron nitride nanosheets' interfaces.

225 nitride nanosheets outperforms the one with boron nitride nanosheets, owning to the lower thermal co

226 sslinked polymer nanocomposites that contain boron nitride nanosheets, the dielectric properties of w

227 l conductivity, owing to the presence of the boron nitride nanosheets, which improve heat dissipation

228 ng connections of silver nanoparticles among boron nitride nanosheets.

229 feature of Pt after assembling on hexagonal boron nitride nanosheets.

230 al functionalization of exfoliated hexagonal boron-nitride nanosheets (BNNSs) is achieved by the solu

231 pproach, we demonstrate that the fluorinated boron nitride nanotube (F-BNNT) quantum dot, which is fe

232 n a one-dimensional material consisting of a boron nitride nanotube at mid-infrared wavelengths.

233 Boron nitride nanotubes (BNNT) uniformly dispersed in st

234 Hexagonal boron nitride (h-BN) and boron nitride nanotubes (BNNT) were recently reported as

235 ays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction chan

236 lled carbon nanotubes (CNTs) and multiwalled boron nitride nanotubes (BNNTs) during the fracture and

237 Despite boron nitride nanotubes (BNNTs) first being synthesized

238 Research interest in boron nitride nanotubes (BNNTs) has increased after the

239 Boron nitride nanotubes (BNNTs) have been reported to po

240 ctural stability and mechanical integrity of boron nitride nanotubes (BNNTs) in high temperature envi

241 The morphological analysis of the end of boron nitride nanotubes (BNNTs) using high-resolution tr

242 Boron nitride nanotubes (BNNTs) were successfully synthe

243 vestigated properties of chemically modified boron nitride nanotubes (BNNTs) with NH(3) and four othe

244 We report the discovery that boron nitride nanotubes (BNNTs), isosteres of CNTs with

245 60 molecules into the interior of insulating boron nitride nanotubes (BNNTs).For small-diameter BNNTs

246 t that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the f

247 surface phonon polaritons on the surface of boron nitride nanotubes and found that it decays within

248 eport atmospheric oxygen induced cleavage of boron nitride nanotubes at temperatures exceeding 750 de

249 , we report that hexagonal boron nitride and boron nitride nanotubes exhibit unique and hitherto unan

250 page in carbon nanotubes, and no slippage in boron nitride nanotubes that are crystallographically si

251 orphological and chemical transformations in boron nitride nanotubes under high temperature atmospher

252 High-thermal-conductivity carbon and boron nitride nanotubes were mass-loaded externally and

253 t applications make use of carbon nanotubes, boron nitride nanotubes, graphene and graphene oxide.

254 PT strands are adsorbed on hexagonal boron nitride near-parallel to the surface in islands wi

255 nt success in synthesizing nanotwinned cubic boron nitride (nt-cBN) with a twin thickness down to app

256 beam epitaxy to grow high-quality monolayer boron nitride on graphite substrates.

257 es in graphene encapsulated within hexagonal boron nitride, opening the door to direct thermal imagin

258 aphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertic

259 DS analysis suggest these 2D platelets to be Boron Nitride Oxide platelets, with analogous structure

260 During the sintering process, cubic boron nitride particles incorporated into the hBN flake

261 ted effect with phonon-polaritonic hexagonal boron nitride, plasmonic super-lattices and hyperbolic m

262 oss-sectional imaging reveals that amorphous boron nitride prevents the diffusion of cobalt atoms int

263 ing in bilayer graphene coupled to hexagonal boron nitride provide a periodic modulation with ideal l

264 novel imprinted biosensor approach based on boron nitride quantum dots (BNQDs) was presented for cTn

265 he intrinsic optical properties of monolayer boron nitride remain largely unexplored.

266 2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic device

267 ngle-layer graphene, and few-layer hexagonal boron nitride, respectively, are utilized to design high

268 of the image phonon-polaritons in hexagonal boron nitride, revealing that their normalized propagati

269 c phonon polaritons propagating in hexagonal boron nitride ribbons is reported.

270 s and in the mid-infrared range of hexagonal boron nitride's upper Reststrahlen band.

271 inorganic nanomaterials, including graphene, boron nitride, semiconducting metal oxides, and transiti

272 ion in a host of materials such as hexagonal boron nitride, silicon carbide, and others.

273 manene, and their saturated forms; hexagonal boron nitride; silicon carbide), rare earth, semimetals,

274 In graphene/hexagonal boron nitride structures(4), the presence of a moire sup

275 transport properties of graphene placed on a boron nitride substrate and accurately aligned along its

276 of graphene's carbon atoms when placed on a boron nitride substrate, and then for the influence of t

277 en a graphene sheet is placed on a hexagonal boron nitride substrate, demonstrating that they are pro

278 ATBG was intentionally broken by a hexagonal boron nitride substrate, with interactions having a seco

279 lm hosting the 2DEG is placed on a hexagonal boron nitride substrate.

280 coupled to a rotationally aligned hexagonal boron nitride substrate.

281 tellite Dirac cones in graphene on hexagonal boron nitride substrates.

282 Here we show that, in graphene-on-boron-nitride superlattices, Brown-Zak fermions can exhi

283 WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multipl

284 al type of every atom in monolayer hexagonal boron nitride that contains substitutional defects.

285 ase of aligned or nearly-aligned graphene on boron nitride, the graphene lattice can stretch and comp

286 hat, for the system of graphene on hexagonal boron nitride, the interplay between the van der Waals a

287 olaritons allow for a flat slab of hexagonal boron nitride to enable exciting near-field optical appl

288 The 1T-TaS2 film is capped with hexagonal boron nitride to provide protection from oxidation.

289 anomaterials (e.g. graphitic carbon nitride, boron nitride, transition metal dichalcogenides, and tra

290 The use of hexagonal boron nitride tunnel barriers as contacts to the graphen

291 in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere.

292 uperstructures in thin crystals of hexagonal boron nitride using atomic-force microscopy and nano-inf

293 ructural analogies to hexagonal graphene and boron nitride, we demonstrate that such low dimensional

294 hnique of exfoliating few-layer 2D hexagonal boron nitride, we exploit the scalable approach of high-

295 quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the

296 n heterostructures of graphene and hexagonal boron nitride, which consequently are widely used.

297 de from isostructural graphite and hexagonal boron nitride, which is attributed to different electros

298 e interlayer separation between graphene and boron nitride, which we achieve by applying pressure wit

299 er graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.

300 A nanoroad of boron-nitride with graphene sideways is designed to conf