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1 al formula ABi(3)Q(5) (A = alkali metal; Q = chalcogen).
2 e bismuth center in a Ch->Bi interaction (Ch=chalcogen).
3 derivative, has wave function density on the chalcogen.
4 sport properties depend on the nature of the chalcogen.
5 with the nucleophile lone pair via the donor chalcogen.
6 challenge, especially for those with heavier chalcogens.
7 he entropy-driven randomized distribution of chalcogens.
8 y is not known between alkenes and the heavy chalcogens.
9 model can be used to provide guidelines for chalcogen activation in future catalyst design based on
10 s for TMDs in bottom-up synthesis: metal and chalcogen adsorption/desorption/diffusion on substrate a
11 tep conversion pathway between aluminium and chalcogen allows rapid charging at up to 200C, and the b
12 d between 1.51 and 1.93 eV through metal and chalcogen alloying, correlating the compositional modula
15 those we recently obtained with its lighter chalcogen analogue, 9-triptycenesulfenic acid (RSOH).
17 Amide bond replacement with planar isosteric chalcogen analogues has an important implication for the
20 ew binary compound, NpSe(2,) possesses metal-chalcogen and chalcogen-chalcogen interactions different
21 family of semiconductors consisting of mixed chalcogen and halogen anions, known as "chalcohalides".
22 and Cd-EPh bond lengths is a function of the chalcogen and increases in the sequence S (0.010 A) < Se
24 inate to obtain insight into the role of the chalcogen and of the oxidation state, to pinpoint the fa
27 onic liquids promotes fast reactions between chalcogens and various metal powders upon microwave heat
29 here M is a transition metal, E represents a chalcogen, and tmeda is N,N,N',N'-tetramethyl-ethylenedi
30 al compositions featuring diverse metals and chalcogens, and remarkable tunability across multiple le
33 ch interactions in the second- and third-row chalcogens are less well-understood and have generated s
35 ganometallic precursors to the corresponding chalcogens at standard temperature and pressure and neut
36 indicate that by increasing the size of the chalcogen atom (S < Se < Te), polymer band gaps are narr
37 8Q variant highlights the direct role of the chalcogen atom (S/Se) at position 576 close to E28, with
39 ation of substituents, and the choice of the chalcogen atom affect the efficiency of IChU catalysis i
40 have significant charge transfer between the chalcogen atom and the internal oxygen atom of the perox
46 totally encapsulates the two central Er with chalcogen atoms (4 S, 4 Se) and excludes neutral THF don
47 or Se) and the peri-interaction between two chalcogen atoms (chalcogen bond) are important for the d
48 unique combination of transition metals and chalcogen atoms along with controlling their properties
49 uoromethyl groups bind covalently to surface chalcogen atoms as well as oxygen substitution sites.
50 rence in reactivity of mu(1)- and mu(2)-type chalcogen atoms attached to the metal was established an
51 ions is essential to activating the in-plane chalcogen atoms but restricted by the high energy barrie
54 nces the local electronic environment of the chalcogen atoms in the mechanically bonded rotaxane bind
55 lecules through incorporation of polarizable chalcogen atoms into terminal groups, while controlling
56 alized surface states enveloping the surface chalcogen atoms of NP, transition metal, and p-orbitals
57 l groups that are covalently attached to the chalcogen atoms of the transition metal dichalcogenide.
58 , by (1)H NMR and DFT calculations, that the chalcogen atoms oriented within the macrocycle cavity ar
60 = MeC(N(i)Pr)2) (2), undergoes insertion of chalcogen atoms resulting in a series of thorium chalcog
61 dings suggest that heavy character of larger chalcogen atoms results in decreased vibronic coupling.
62 the bond lengths between the metal atoms and chalcogen atoms through the change of the interlayer int
64 iting the NMR-active nuclei of the ChB-donor chalcogen atoms, heteronuclear (77)Se and (125)Te NMR we
65 that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and M
70 amide, and 2,4-diarylpentafluorosulfanyl-1,3-chalcogen azoles reveal that the selenoamide and thioami
74 of them, in the current work, nanostructured chalcogen-based aerogels called chalcogels are shown to
76 odes and various functional materials in the chalcogen-based dual anionic and cationic redox cathode
78 a bidirectional, rapidly charging aluminium-chalcogen battery operating with a molten-salt electroly
79 series of acyclic anion receptors containing chalcogen bond (ChB) and halogen bond (XB) donors integr
80 ntaining halogen bond (XB) and unprecedented chalcogen bond (ChB) donors integrated into a 3,5-bis-tr
81 resembles SO(3)...H(2)O in containing a pure chalcogen bond (S...O) with a dissociation energy of 7.2
82 based on the variation of the strength of a chalcogen bond between the azo group and a Te-Ph unit in
83 at in the excited S(1) state the noncovalent chalcogen bond converts to a covalent three-electron sig
84 3 (4X21) reveals an unusual bivalent halogen/chalcogen bond donated by the ligand and the back-pocket
85 ng a linear free energy relationship between chalcogen bond donor ability and calculated electrostati
86 the intrinsic hydrophobicity of halogen and chalcogen bond donor atoms integrated into a foldamer st
87 ts further advance and establish halogen and chalcogen bond donor functions as new tools for overcomi
88 tanedione-3,5), were cocrystallized with the chalcogen bond donors (4-NC(5)F(4))(2)Ch (Ch = Se, Te) t
89 also titrated against dicationic halogen and chalcogen bond donors as well as a thiourea as a represe
90 ond leads to elongation of the C-I bond, the chalcogen bond facilitates the transfer of more electron
94 furcate, whereas in 2.(4-NC(5)F(4))(2)Te the chalcogen bond Te...d(z)(2)-Pt(II) is purely two-centere
95 eri-interaction between two chalcogen atoms (chalcogen bond) are important for the deiodination react
96 lowed the recognition of the metal-involving chalcogen bond, namely, Ch...d(z)(2)-Pt(II) (its energy
97 pical, the molecule is stabilized by a S...O chalcogen bond, sometimes augmented by CH...F or CH...O
98 and diaryl dichalcogenides underwent carbon-chalcogen bond-forming reaction to give unsymmetrical di
102 arget recognition elements, and halogen- and chalcogen-bond donors are discussed as hydrogen-bond don
108 important role in stabilizing hydrogen over chalcogen-bonded structures, while dispersion is more im
109 ed sigma-hole congener halogen bonding (XB), chalcogen bonding (ChB) is emerging as a powerful noncov
113 using charge-neutral sigma-hole halogen and chalcogen bonding acyclic hosts is demonstrated for the
114 exploitation of an unconventional bifurcated chalcogen bonding and hydrogen bonding (HB) network, whi
115 tivity trends of the first example of an all-chalcogen bonding anion receptor in pure water are compa
116 5-selenadiazole) molecular tecton reveal how chalcogen bonding can template high-energy lattice struc
117 version are gaining admiration, non-covalent chalcogen bonding catalysis (ChB) is in the budding stag
118 al review will focus on the recently evolved chalcogen bonding catalysis and emphasis will be given t
120 he basics of non-covalent bonding catalysis, chalcogen bonding catalysis, chiral chalcogenide synthes
121 alcogens, details of unsuccessful asymmetric chalcogen bonding catalysis, enantioseparation of racemi
122 f bromide and iodide halide anions, with the chalcogen bonding heteroditopic receptor notably display
123 sted by the competition between hydrogen and chalcogen bonding in the homodimers of chalcogen hydride
124 bstantial evidence supports the existence of chalcogen bonding in the solid state, quantitative data
125 participation of the benzotelluradiazoles in chalcogen bonding interactions was probed by UV-vis, (1)
128 functional groups consisting of a bifurcated chalcogen bonding mechanism working hand-in-hand with HB
130 raction is stronger than the tellurium-based chalcogen bonding one, which makes the former a stronger
131 delocalization (occurring by intramolecular chalcogen bonding) in determining the conformation, equi
134 sity functional theory studies, a library of chalcogen-bonding (ChB) and halogen-bonding (XB) mechani
136 was to overcome this "flipper dilemma" with chalcogen-bonding cascade switches that turn on donors a
137 up-conversion spectroscopy evinces ultrafast chalcogen-bonding cascade switching in the excited state
139 lar orbital energies was consistent with the chalcogen-bonding interactions being dominated by n -->
140 Although the prevalence and applications of chalcogen-bonding interactions continues to develop, deb
143 ile with elemental chalcogens to form carbon-chalcogen bonds and likewise reacts with PCl(3) to furni
146 of synthetic approaches to the DTT scaffold, chalcogen bonds are introduced as, together with redox s
148 Such interactions have since become known as chalcogen bonds by analogy to hydrogen and halogen bonds
149 nvestigate the effect of light absorption on chalcogen bonds containing divalent chalcogen centers.
150 relative strengths of the interfacial metal-chalcogen bonds during the reduction of Au(3+) or Ag(+)
151 that in some cases photoswitches containing chalcogen bonds exhibit exceptional switching behavior.
152 s such as mechanochemistry for bioimaging or chalcogen bonds for catalysis and solar cells and becaus
154 hitectures as a privileged motif to engineer chalcogen bonds into functional systems, complementary i
155 ggested to contribute to the unique power of chalcogen bonds to transport anions across lipid bilayer
157 ctronic structure and nature of the actinide-chalcogen bonds were investigated with (77)Se and (125)T
159 d to recent efforts to integrate halogen and chalcogen bonds, the unorthodox counterparts of hydrogen
164 teraction responsible for either hydrogen or chalcogen bonds: in the former, the sigma-bond connectin
167 will shed light on designing Ni and Co free chalcogen cathodes and various functional materials in t
168 ate electrolytes and a family of high-energy chalcogen cathodes enabled by mechanochemical reaction d
171 bonds are sigma hole interactions between a chalcogen center and a Lewis base center and have been a
173 of [H2S2(+)]2, the (4c-6e) bond between the chalcogen centers is a good description of this dimer.
176 green oxidant to promote the cleavage of the chalcogen-chalcogen bond in diorganyl diselenides and di
177 ion metal dichalcogenides (TMDCs); i.e., the chalcogen-chalcogen bonds holding the layers are progres
179 ound, NpSe(2,) possesses metal-chalcogen and chalcogen-chalcogen interactions different from those re
181 lar orbital irrespective of whether a direct chalcogen...chalcogen or chalcogen...H-C contact was mad
182 Se2(1-y), exhibiting fully tunable metal and chalcogen compositions that span the MoSe2-WSe2 and WS2-
189 wn (phenoxazine, PNX), and its less reactive chalcogen cousin (phenothiazine, PTZ), we explored struc
190 Our results strongly suggest that the common chalcogen defects in the described 2D-TMD semiconductors
191 MDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the s
196 s by ChB, stabilization of cations by chiral chalcogens, details of unsuccessful asymmetric chalcogen
199 oanionic ligands containing formally neutral chalcogen donors to facilitate isostructural comparisons
200 ional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS(
201 m an oxide precursor and where the elemental chalcogen effects transformation of the oxide precursor
202 teries in the choice of a positive elemental-chalcogen electrode as opposed to various low-capacity c
208 s are transferred selectively to the anionic chalcogen framework, while the transition metal octahedr
215 n and chalcogen bonding in the homodimers of chalcogen hydrides (H(2)X)(2), where X = O, S, Se, Te ha
218 metal on TMDs, which allows electronic metal-chalcogen interactions and diverse reaction mechanisms.
219 o incorporate selected metallic elements and chalcogens into a stable solution as metal chalcogenide
221 unprecedented selectivity over the metal and chalcogen ions present within a stable octanuclear frame
222 ontrolled sequential deposition of metal and chalcogen ions, we achieve atomic-level precision in def
225 des (TMTs, with M a transition metal and X a chalcogen) is typified by one-dimensional (1D) chains we
226 first experimental evidence on the effect of chalcogen isologues on the structural and electronic pro
228 ive removal and replacement of the uppermost chalcogen layer, thus transforming classical transition
229 MDs, monolayer Janus TMDs have two different chalcogen layers sandwiching the transition metal and th
230 Both single and double O atom uptake at the chalcogens led to the conversion of the four-membered ri
231 alency by introducing a less electronegative chalcogen ligand (sulfur) in the cathode structural fram
233 nd grown TMD surface, TMD stacking sequence, chalcogen/metal ratio, flake edge diffusion and vacancy
234 Herein, we report a new method, the boron-chalcogen mixture (BCM) method, for the synthesis of pha
236 um chalcogenides based on the use of a boron-chalcogen mixture, where boron functions as an "oxygen s
241 ctly functionalizing NH-free carbazoles with chalcogen motifs, offering new opportunities in synthesi
243 itate a comparison of all naturally abundant chalcogens (O, S, Se, and Te) in the IChU structure.
244 a quasi-1D platform with face-sharing metal-chalcogen octahedra for understanding the mechanism of e
248 alcoxide electrocatalysts by controlling the chalcogen or metal stoichiometry and explore critical as
249 , to multi-component compounds of metals and chalcogens or metalloids, doped fullerenes and organic c
250 electrodes to the aromatic pi-system via the chalcogen p lone pairs, and greater overlaps among these
251 behaviour to the strong coupling between the chalcogen p orbitals and the intermetal t2g-bonding orbi
253 y driven as it aims for the formation of the chalcogen phase characterized by the lower solubility un
254 to the formation of the binary coinage metal chalcogen phases, but do not collapse into the solid M(2
255 n, when found also on other groups of atoms (chalcogens, pnicogens, tetrels and aerogens), it resulte
257 ng the recently discovered NCIs are halogen, chalcogen, pnictogen, tetrel, carbo-hydrogen, and spodiu
260 ement are due to the abnormal changes in the chalcogen ratio (Se:Te) during the film growth and that
261 oresistance of Bi(2)Te(x)Se(3-x) for varying chalcogen ratios and constant growth conditions as a fun
262 ase, and those at X increase from tetrels to chalcogens; reaction energies become less favorable acro
263 X2, where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped sour
264 ion of a halogen bond between the iodine and chalcogen (S or Se) and the peri-interaction between two
266 quential ferrocene C-H organochalcogenation (chalcogen = S, Se, and Te) has also been established for
267 nductors having either pnictogens (P, As) or chalcogen (Se, Te) of the type AFFeAs (A = alkaline-eart
268 ore the 5-(methylchalcogeno)-1,2,3-triazole (chalcogen = Se, Te) motif as a novel ChB donor for anion
269 The relative photodynamic activities of the chalcogen series were evaluated against a panel of proto
273 ure and electronic properties of an abundant chalcogen-site point defect common to MoSe(2) and WS(2)
274 Hydrogenated carbon impurities located at chalcogen sites introduced by chemical doping are activa
275 he mixed Se/Te analogue, the Te occupies the chalcogen sites that are on the "surface" of the layers.
276 ist of transition metal atoms substituted at chalcogen sites with desirable spin-triplet ground state
279 n of nitrogenase, pointing to the utility of chalcogen-substituted FeS clusters in future mechanistic
280 iMe3) in THF results in the isolation of the chalcogen-substituted uranyl analogues [Cp*2Co][U(O)(E)(
284 e-shared distorted FeX(4) (X = pnictogen and chalcogen) tetrahedra and these tetrahedral layers are r
285 )](-) reacts as a nucleophile with elemental chalcogens to form carbon-chalcogen bonds and likewise r
286 nterplay among the p-, d-, and f-orbitals of chalcogens, transition metals, and lanthanides, respecti
287 eS]- and [NiFeSe]-H(2)ase, yields oxygenated chalcogens under aerobic conditions, and delays irrevers
288 ere we study the interaction between air and chalcogen vacancies (V(X)), the most typical defects in
292 attributed to in-gap states associated with chalcogen vacancies, even in the absence of direct exper
294 f TMDs (MeX(2): Me = Mo, W; X = S, Se) under chalcogen vapor atmosphere, seeded by pre-deposited and
295 tion, achieved by exposing non-vdW solids to chalcogen vapours, can be controlled using the enthalpie
296 e periodic trend for hyperconjugation in the chalcogens, which reflect a decreasing n(x)-->sigma(C-H(
297 predict the Wyckoff positions that secondary chalcogens will occupy in a range of single-anion hosts.
299 metry-free T/E cluster core (T = tetrel, E = chalcogen) with the attachment of ligands that allow pi