ライフサイエンスコーパス: charge carrier

1 ost exclusively on electrons as the dominant charge carrier.

2 dynamic equilibria of photogenerated surface charge carriers.

3 ciencies (Q.E.) due to fast recombination of charge carriers.

4 hence appear to act as blockers, as well as charge carriers.

5 wave pairing and the anomalous scattering of charge carriers.

6 s introduce mid-gap states that rapidly trap charge carriers.

7 ased temperature and generation of energetic charge carriers.

8 ecombination kinetics typical of dissociated charge carriers.

9 wn aqueous ion batteries employ metal cation charge carriers.

10 ng source for optical phonons as well as for charge carriers.

11 kets, offering a valley degree of freedom to charge carriers.

12 arvesting and the transfer of nonequilibrium charge carriers.

13 the Dirac fermionic nature for both types of charge carriers.

14 tors generates trapping states that localize charge carriers.

15 or slow long-range diffusion of liquid-phase charge carriers.

16 tation, transport and trapping events of the charge carriers.

17 nhances the separation of the photogenerated charge carriers.

18 dispersion relation and its chiral nature of charge carriers.

19 tions and electron-phonon coupling localizes charge carriers.

20 n by physically separating hole and electron charge carriers.

21 band gap and thus localizes potential mobile charge carriers.

22 red can readily distinguish the two types of charge carriers.

23 such dopants does not always produce mobile charge carriers.

24 gle-charge tunnelling, indicating pairing of charge carriers.

25 ly with independent tunnelling of individual charge carriers.

26 cannot be attributed to conventional mobile charge carriers.

27 halide nanocrystals without the injection of charge carriers.

28 control of the valley index in ensembles of charge carriers(10-12), valley control of individual cha

29 oS(2) /PbI(2) stacks, where fast-transferred charge carriers accumulate in MoS(2) with high emission

30 on nanostructures are easily charged but how charge carriers affect their structural stability is unk

31 battery chemistry to large molecular ions as charge carriers and also highlights the electrochemical

32 any states deep within the bandgap that trap charge carriers and cause them to recombine non-radiativ

33 The interactions between charge carriers and electrode structures represent one o

34 a polaron pair, which is a precursor to free charge carriers and has lower binding energy than an exc

35 -plane and interlayer separation/transfer of charge carriers and in turn boost the photocatalytic eff

36 s the energy-dependent mean free path of the charge carriers and is affected by crystal structure, sc

37 hase reveal its important role in regulating charge carriers and stabilizing the redox chemistry.

38 strate the importance of cooperation between charge carriers and surface adsorbates in regulating the

39 a decrease in the Drude contribution of free charge carriers and the appearance of the low-energy ele

40 roperties with a high fraction of long-lived charge carriers and the availability of a reductive and

41 lators often exhibit symmetry breaking where charge carriers and their spins organize into patterns k

42 ll-known phenomenon, and the identity of the charge carriers and their transfer mechanism have been d

43 or thousands of years, but the nature of the charge carriers and their transfer mechanisms are still

44 n for more than 2600 years but the nature of charge carriers and their transfer mechanisms still rema

45 Yet, the nature of charge carriers and their transport mechanism in these m

46 g are crucial to control the behavior of the charge carriers and to grow high quality, defect-free pe

47 additional laser pulse to optically generate charge carriers, and carefully design temporal sequence

48 ductors enables fine control over the excess charge carriers, and thus the overall electronic propert

49 ergy storage devices using potassium-ions as charge carriers are attractive due to their superior saf

50 ates for selective and balanced injection of charge carriers are demonstrated.

51 ronic structure and dynamics of photoexcited charge carriers at the Cu(2)O surface as well as the int

52 n metal nanoparticles requires separation of charge carriers at the nanoparticle and their transfer t

53 the directional separation of light-excited charge carriers at the p-n junction, with holes flowing

54 of a "setter" can ensure a long lifetime of charge carriers at the photoanode/electrolyte interface.

55 odes orbit decreases in diameter pulling the charge carriers away from the surface.

56 The charge-carrier balance strategy by interface engineering

57 Here, ultralow bandgap GNRs with charge carriers behaving as massive Dirac fermions can b

58 ing the transfer of a well-defined number of charge carriers between the island and the reservoirs, s

59 rectly, which involves elastic tunnelling of charge carriers between the quantum channels, determines

60 e not only gives rise to a high velocity for charge carriers but also leads to a small density of sta

61 on is consistent with enhanced scattering of charge carriers by optical phonons within the nanotube.

62 Introduction of charge carriers by reduction of the Fe(4)S(4) clusters i

63 ere, we show that the screening of band-edge charge carriers by rotation of organic cation molecules

64 Here, we show how to manipulate the charge carriers by using a circular p-n junction whose s

65 symmetrical domains, shuttling of two mirror charge carriers can be achieved to double the charge out

66 orbitals, the current blockade is lifted and charge carriers can tunnel sequentially across the junct

67 n CH3 NH3 PbI3 perovskite films enhances the charge carrier collection efficiency of solar cells lead

68 tructure and defect concentration, including charge carrier concentration and electronic conductivity

69 d borophene, are all metallic with high free charge carrier concentration, pointing toward the possib

70 75-0.98), in contradiction with the measured charge carrier concentration, resistivity, mobility, and

71 ithin a crystalline matrix can provide large charge carrier concentrations without strongly influenci

72 he few-layer PdSe2 display tunable ambipolar charge carrier conduction with a high electron field-eff

73 -effect transistors reveal tunable ambipolar charge carrier conduction with an electron mobility up t

74 electric field that gives a highly efficient charge carrier control in the semiconductor channel.

75 t for one particular push-pull material, the charge carriers created by doping are entirely non-condu

76 ide homogenization coincides with long-lived charge carrier decays, spatially homogeneous carrier dyn

77 leading to the accumulation of high surface charge carrier densities, has been often exploited in 2D

78 d could be realized in combination with high charge-carrier densities.

79 the doubled vacancy concentration raises the charge carrier density and suppresses bipolar diffusion,

80 It was revealed that as the charge carrier density, n(f), increases, T(c) also sligh

81 We find that when creating a high charge carrier density, the energy is efficiently transf

82 The new HTL enables a 1.4x increase in charge carrier diffusion length in the active layer; and

83 arrier recombination lifetimes, and enhanced charge carrier diffusion lengths in the deuterated sampl

84 s, such as high absorption coefficient, long charge-carrier diffusion lengths, and high defect tolera

85 ed via the dielectric environment as well as charge carrier doping.

86 Polarons-electronic charge carriers 'dressed' by a local polarization of the

87 vated device temperature coupled with excess charge carriers due to constant illumination is the domi

88 attributed to the distribution of available charge carriers during the MALDI process.

89 etermining the optoelectronic properties and charge carrier dynamics can provide valuable insight tow

90 ormance, yet the impact of these states upon charge carrier dynamics important for photoelectrochemic

91 Charge carrier dynamics in amorphous semiconductors has

92 develop a simple, quantitative model for the charge carrier dynamics in these photocatalysts, which i

93 Understanding and controlling ultrafast charge carrier dynamics is of fundamental importance in

94 The effect of TDMs and 2D perovskites on the charge carrier dynamics of PSCs is discussed to provide

95 function properties which greatly impact the charge carrier dynamics of PSCs.

96 ations to provide insightful outlooks on the charge carrier dynamics.

97 nce band maximum; and (iii) bulk and surface charge carrier dynamics.

98 elucidate the role of heterovalent doping on charge-carrier dynamics and energy level alignment at th

99 es, developing a quantitative description of charge-carrier dynamics in defective TMD monolayers can

100 e report a first-principles investigation of charge-carrier dynamics in pristine and defective WSe(2)

101 copy measurements are conducted to study the charge-carrier dynamics.

102 olar cells (PSCs) depends drastically on the charge-carrier dynamics.

103 sensitive to the QCP, implying a significant charge carrier effective mass enhancement at the doping-

104 ntangle increased temperature from energetic charge carriers effects.

105 n of coherent phonon pairs, and diffusion of charge carriers - effects operating at vastly different

106 rgetic offset in order to photogenerate free charge carriers efficiently, owing to their inability to

107 hts to selectively choose the photogenerated charge carriers (either electrons or holes) passing thro

108 ft in their UV/Vis absorption and long-lived charge carriers (electrons and holes) at room temperatur

109 Charge carriers (electrons) were added to ZnO nanocrysta

110 nO behaves like a 2D semiconductor, in which charge carriers electrostatically induced by the back ga

111 ate separation and migration of photoinduced charge carriers, enhance the adsorption and concentratio

112 interaction of the MWIR signal with the free charge carrier excited by the pump.

113 ctronic structure of superlattices such that charge carriers experience effectively no magnetic field

114 EDLs thereby enable enhanced rates of charge carrier extraction from, and transport among, QDs

115 The interaction between the charge carriers flowing inside graphene and the plasmons

116 ttracted considerable interest as fast ionic charge carriers for electrochemical energy storage.

117 vesting pigment needed for the generation of charge carriers for the production of electricity.

118 In band-like semiconductors, charge carriers form a thermal energy distribution rapid

119 Free charge carriers form within a 200 fs excitation pulse, t

120 the exceedingly short lifetimes of energetic charge carriers formed in metal nanoparticles under ligh

121 eight organic molecular crystals, the excess charge carrier forms a polaron delocalized over up to 10

122 nductors, the transfer of a rather localized charge carrier from one site to another triggers a defor

123 polymers may result from the percolation of charge carriers from conducting ordered regions through

124 a reversal of the sign of a majority of the charge carriers from hole-like to electron-like at the t

125 ral principle for the efficient screening of charge carriers from scattering with other charge carrie

126 We demonstrate that photoinduced charge carriers from the [Formula: see text] photovoltai

127 peratures are consistent with scatterings of charge carriers from weak disorder and quantum fluctuati

128 spectra from the plasmonic resonances due to charge carriers generated from defect states within the

129 ight trapping cells, we show that the higher charge carrier generation and collection in this design

130 Understanding the enhancement of charge carrier generation and their diffusion is imperat

131 ctors, tunable at a molecular level for high charge carrier generation and transfer.

132 m the Au NPs to the CdSe QDs, which enhances charge-carrier generation in the semiconductor and suppr

133 This complex process includes charge-carrier generation, extraction, transport and col

134 lemental sulfur electrode with Cu(2+) as the charge carrier gives a four-electron sulfur electrode re

135 in the photogeneration and recombination of charge carriers has been an important focus of study wit

136 r, systematic studies on the 1D character of charge carriers have not been done yet.

137 A charge carrier in a lead halide perovskite lattice is pr

138 rlie the preference for arginine as a mobile charge carrier in VSD.

139 e investigate the dynamics of photogenerated charge carriers in 2D D-A COFs by combining femtosecond

140 Well-confined excitons/charge carriers in a dielectric/quantum well based on co

141 any aspects of the dynamics of photo-excited charge carriers in amorphous semiconductors remain poorl

142 Charge carriers in graphene behave like massless Dirac f

143 out-of-plane energy transfer channel, where charge carriers in graphene couple to hyperbolic phonon

144 ted with the accumulation of photo-generated charge carriers in intra-bandgap tail states.

145 Cyclotron motion of charge carriers in metals and semiconductors leads to La

146 Understanding the nature of charge carriers in nanoscale titanium dioxide is importa

147 e pumping mechanism results in separation of charge carriers in pn-junction wells leading to a large

148 provide evidence of the polaronic nature of charge carriers in PV perovskites.

149 Charge carriers in semiconducting transition metal dicha

150 e sub-terahertz coherent phonon mode by free charge carriers in silicon at room temperature.

151 e description of the interaction between the charge carriers in the GNRs and the piezoelectric fields

152 2) domains, and the trapping of photoexcited charge carriers in the localized states in sp(3) domains

153 eriment indicates that the mean free path of charge carriers in the nanoribbons amounts to typically

154 y biased towards the excitation of energetic charge carriers in the Pt shell.

155 We studied spin dynamics of charge carriers in the superlattice-like Ruddlesden-Popp

156 Charge carriers in two-dimensional transition metal dich

157 damental parameters of majority and minority charge carriers-including their type, density and mobili

158 traced to increased scattering time for free charge carriers, indicating that scattering mechanisms l

159 Charge carrier insertion into the graphene makes the EEV

160 e bandgap of grain shell, which confines the charge carriers inside grains for efficient radiative re

161 Establishing how charge carriers interact with phonons in these materials

162 signatures associated with injecting a free charge carrier into a QD under equilibrium conditions, i

163 s negligible selectivity toward cations, the charge carrier is screened by electrolytes due to the se

164 and hole pairs, called excitons, and unbound charge carriers is a key cross-cutting issue in photovol

165 ngth of excitons and the extraction yield of charge carriers is presented based on the performance of

166 The results show that the collection of charge carriers is strongly dependent on the electronic

167 ht-induced electron interactions enhance the charge-carrier itinerancy, leading to a switchable metal

168 The charge carrier lifetime increased upon reversing the app

169 The charge carrier lifetime of Sr(2+) -containing perovskite

170 femtoseconds to the seconds, reveal that the charge carrier lifetimes as well as the charge injection

171 s of improving charge-selective contacts and charge carrier lifetimes in perovskites via processes su

172 pplied potentials indicate a decrease in the charge carrier lifetimes of CsPbBr3 as we increase the p

173 re observed over timescales competitive with charge carrier lifetimes.

174 large, micrometer-sized grains and enhanced charge-carrier lifetimes, as probed by transient absorpt

175 ransport characteristics, including multiple charge carriers, logarithmic dependence of resistance on

176 tielectron system, utilizing molecular based charge carriers, made from inexpensive, abundant, and su

177 ce of long-range ferroelectricity in LHPs, a charge carrier may be localized to and/or induce the for

178 esponsible for the spatial variations in the charge carrier mean free path (deltal pinning).

179 the direct evidence of multichannel-improved charge-carrier mechanism to facilitate electron-hole tra

180 in the hole transport regime with an average charge carrier mobilities of 1.8 x 10(-4) cm(2) V(-1) s(

181 N-N and A-N polymers to feature the highest charge carrier mobilities, further highlighting the bene

182 standing optoelectronic properties: superior charge carrier mobilities, low densities of deep trap st

183 e, which might be achievable, if much higher charge-carrier mobilities determined could be realized i

184 microstrain along with a twofold increase in charge-carrier mobilities leading to values exceeding 20

185 Intrinsic charge-carrier mobilities were simulated from kinetic Mo

186 properties of the fabricated devices such as charge carrier mobility (u), barrier height ( (b)), seri

187 r absorptivity, suitable energy levels, high charge carrier mobility and high solubility in organic s

188 al of attention due to their relatively high charge carrier mobility and low resistivity.

189 However, charge carrier mobility and photo-stability in currently

190 titative correlation between doping-enhanced charge carrier mobility and the Herman's orientation par

191 CQD:perovskite solid exhibits a doubling in charge carrier mobility as a result of a reduced energy

192 e (IDT) unit and was expected to enhance the charge carrier mobility by improving backbone planarity

193 A larger improvement of charge carrier mobility for the more linear backbones wa

194 ity of domain boundaries are demonstrated by charge carrier mobility measurements, scanning electron

195 onducting polymer blends provides an average charge carrier mobility of 0.4 cm(2) V(-1) s(-1) and cur

196 a direct bandgap of 1.56 eV and a very high charge carrier mobility of 4.3 x 10(3) cm(2) V(-1) s(-1)

197 Using this method, the charge carrier mobility of C8 -benzothieno[3,2-b]benzoth

198 dipole moment and their relaxation and (iv) charge carrier mobility of graphene that modulated the e

199 (e) of more than 13 % while maintaining the charge carrier mobility of unstrained crystals (mu>0.7 m

200 iton oscillator strength, however, their low charge carrier mobility prevent their use in high-perfor

201 The resulting charge carrier mobility strongly depends on both the deg

202 to how nonbonding interactions can influence charge carrier mobility through changes in secondary str

203 Record high room temperature charge carrier mobility up to 52 cm(2)/Vs and ultra-shar

204 a new method to achieve large modulation of charge carrier mobility via channel doping without disru

205 rom concomitantly high luminescence and high charge carrier mobility.

206 iconductors, which significantly reduces the charge carrier mobility.

207 nductor devices requires an understanding of charge carrier mobility.

208 4 x 10(14) cm(-3) ), and unprecedented 9 GHz charge-carrier mobility (71 cm(2) V(-1) s(-1) ), is demo

209 to-electric current conversion with enhanced charge-carrier mobility and low trap density compared to

210 H3 NH3 PbBr3 single crystals reveal that the charge-carrier mobility follows an inverse-temperature p

211 in 9-AGNRs and revealed their high intrinsic charge-carrier mobility of approximately 350 cm(2).V(-1)

212 The charge-carrier mobility of organic semiconducting polyme

213 The temperature dependence of the charge-carrier mobility provides essential insight into

214 iciency is observed without reduction in the charge-carrier mobility resulting in radiances of up to

215 r of 2 increase in photocarrier lifetime and charge-carrier mobility that resulted from enhancing the

216 imensional semiconductor-exhibits favourable charge-carrier mobility, tunable bandgap and highly anis

217 nciple of operation is strongly sensitive to charge-carrier motion in the thermal oxide nanooverlayer

218 sults suggest that the direction and rate of charge-carrier movement regulate the open time of mPanx1

219 Charge carriers of MoTe2 flakes annealed via RTA at vari

220 electrons (B center) or holes (N center) as charge carriers of very high mobility, reaching values o

221 cathode charge carrier, the K ion working as charge carrier on the anode, and Na as the medium to liq

222 Here, we probe the effect of charge carriers on phonon heat transport at room tempera

223 t for optoelectronic applications relying on charge carrier photogeneration.

224 y, the one-dimensional multichannel-improved charge-carrier photosynthetic heterojunction system with

225 otential to provide fundamental insight into charge carrier processes in devices, and to enable futur

226 A method to determine the doping induced charge carrier profiles in lightly and moderately doped

227 l electrical transport that overall suppress charge carrier recombination and improve TiO2 and alpha-

228 n alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach ro

229 s a defect-rich perovskite lattice behind as charge carrier recombination in the re-formed lattice is

230 s that have been proposed to affect measured charge carrier recombination lifetimes, namely: (1) reco

231 the influence of electrochemical bias on the charge carrier recombination process.

232 feration accompanying increasing Mn promotes charge carrier recombination, reducing cell fill factors

233 visible range, and dramatically inhibit the charge carrier recombination, which is crucial for boost

234 anced performance being rooted in suppressed charge carrier recombination.

235 Nonradiative charge-carrier recombination in transition-metal dichalc

236 ailed understanding of the mechanisms behind charge-carrier recombination in WSe(2) monolayers with d

237 oexcited carrier lifetimes, which has led to charge-carrier recombination processes being described a

238 water oxidation also contribute to competing charge-carrier recombination with photogenerated electro

239 light absorption, low charge mobility, high charge-carrier recombination, and reduced diffusion leng

240 dation are also the most important sites for charge-carrier recombination.

241 However, extraction of the photo-generated charge carriers remains challenging.

242 ion or conversion electrodes because the ion charge carriers represent the sole electrode active mass

243 ocalized on the core of the cluster in which charge carriers reside before tunnelling to the collecto

244 The results suggested that a charge carrier residue at the C-terminus is promoting th

245 are consistent with the polaronic nature of charge carriers, resulting from an interaction of charge

246 Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional

247 and/or providing type- and energy-dependent charge carrier scattering.

248 ing transitions between different regimes of charge carrier scattering.

249 y demonstrates the accurate understanding of charge-carrier scattering is crucial for developing high

250 The charge carrier selection principle in this ternary hybri

251 use super-resolution imaging, operated in a charge-carrier-selective manner and with a spatiotempora

252 Here we report an in situ observation of charge carrier self-localisation in a hematite device, a

253 However, they typically suffer from poor charge carrier separation and transport.

254 ctive sites for CO(2) reduction and improved charge carriers separation/transfer.

255 effect, the traditional means of determining charge-carrier sign and density in a conductor, requires

256 These potentials also reflect the charge-carrier sign and density.

257 ng to its spatially and potentially confined charge carriers, simultaneously.

258 or several operational pH values (-1 to 15), charge carrier species (H(+), Li(+), Na(+), K(+), Mg(2+)

259 to the development of spin-lasers, in which charge-carrier spin and photon spin are exploited.

260 ients and the complex kinetics of electronic charge carrier subpopulations, in particular the polaron

261 ctive layer lead to an energetic cascade for charge carriers, suppressing pathways to recombination,

262 the electronic properties of low-dimensional charge carrier systems such as graphene nanoribbons (GNR

263 However, the chiral nature of the charge carriers that is responsible for the high mobilit

264 rature superconductors, in the model of free charge carriers the phase relaxation time of fluctuating

265 s contributing stable cycling as the cathode charge carrier, the K ion working as charge carrier on t

266 For efficient generation of free charge carriers, the donor-acceptor (D-A) conjugation ha

267 , links between the rate of recombination of charge carriers, their energetic distribution and the mo

268 face defects in semiconductors can trap free charge carriers; this interaction becomes stronger at re

269 ing meta-atoms and/or changing the number of charge carriers through electrical gating.

270 s the possibility to control the spin of the charge carriers through the resulting hybrid molecule/me

271 high concentrations and high mobility of the charge carriers to be realized simultaneously in n-doped

272 the efficient generation and utilization of charge carriers to boost PEC performance.

273 for the effective production of photoinduced charge carriers to enhance the photocatalytic capability

274 here the emergence of a flat band causes the charge carriers to slow down(3), correlated electronic p

275 the study of the valley degree of freedom of charge carriers to store and control information.

276 hich allows determining the range over which charge carriers transferred from plasmonic hot spots can

277 i stacking alignment, which are favorable to charge carrier transport and hence suppress recombinatio

278 Charge carrier transport in organic semiconductors is at

279 The charge carrier transport in the fabricated GNRs was stud

280 e common, reliable strategies to control the charge carrier transport properties, but the precise mec

281 icating that phonon scattering dominates the charge carrier transport.

282 consist of a multilayer structure, for which charge-carrier transport across interfaces plays a cruci

283 scuss the impact of CT exciton generation on charge-carrier transport and on the efficiency of photov

284 structured photoanodes benefiting from small charge-carrier transport distances.

285 ary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the i

286 face engineering is employed to optimize the charge-carrier transport in inverted planar heterojuncti

287 interface Schottky barrier and further tune charge-carrier transport.

288 toresponse due to the different photoexcited-charge-carrier trapping times in sp(2) and sp(3) nanodom

289 We demonstrate that the formation of charge carrier traps at the interface can dominate the d

290 cal Hall effect, permits here measurement of charge carrier type, density, and mobility in epitaxial

291 tering, or hydrodynamic collective motion of charge carriers, typically pronounced only at cryogenic

292 cilitated by elevated temperature and excess charge carriers ultimately results in rapid light-induce

293 This is the largest insertion charge carrier when non-solvated ever reported for batte

294 ated unique electronic properties, thanks to charge carriers which mimic massless relativistic partic

295 ated unique electronic properties, thanks to charge carriers which mimic massless relativistic partic

296 in such sub-nanometre cavities generate hot charge carriers, which can catalyse chemical reactions o

297 Aluminum is a naturally abundant, trivalent charge carrier with high theoretical specific capacity a

298 mental mechanism that connects the spin of a charge carrier with its momentum.

299 elation of temporal and spatial behaviors of charge carriers with their photoconductivity by combinin

300 f charge carriers from scattering with other charge carriers, with charged defects and with longitudi