ライフサイエンスコーパス: chemical vapor deposition

1 ce of loading effect commonly encountered in chemical vapor deposition.

2 ructure of p-type Sb2Te3 nanowires, grown by chemical vapor deposition.

3 aligned CNTs are grown on metal wires after chemical vapor deposition.

4 deposition was performed by plasma-enhanced chemical vapor deposition.

5 bilayers and single layer graphene grown by chemical vapor deposition.

6 licon solar cell, deposited by high-pressure chemical vapor deposition.

7 e standing graphene on 4H-SiC(0001) grown by chemical vapor deposition.

8 verage with single-layer graphene, formed by chemical vapor deposition.

9 LG) synthesized by microwave plasma enhanced chemical vapor deposition.

10 ere then synthesized from these templates by chemical vapor deposition.

11 f large-area graphene films prepared through chemical vapor deposition.

12 0.87 +/- 0.05 eV) than similar films made by chemical vapor deposition.

13 ielectric substrates using a low temperature chemical vapor deposition.

14 o be used as a higher-quality alternative to chemical vapor deposition.

15 nanotubes (CNTs) in water-assisted catalytic chemical vapor deposition.

16 es resembling pine trees were synthesized by chemical vapor deposition.

17 ce thin film conformality in low temperature chemical vapor deposition.

18 eposition of pCN onto a porous support using chemical vapor deposition.

19 th unprotected, large-area graphene grown by chemical vapor deposition.

20 nning probe block copolymer lithography, and chemical vapor deposition.

21 O thin films were grown via aerosol assisted chemical vapor deposition.

22 tant technologies ranging from combustion to chemical vapor deposition.

23 ctures of 2D alpha-Mo(2) C crystals grown by chemical vapor deposition.

24 nolayer MoS2 grown on silicon oxide by using chemical vapor deposition.

25 loys Mox W1-x S2y Se2(1-y) is reported using chemical vapor deposition.

26 ) core-shell hybrid foam is fabricated using chemical vapor deposition.

27 m in GaN epilayers prepared by metal-organic chemical vapor deposition.

28 homoepitaxially grown on MoS2 monolayer via chemical vapor deposition.

29 nthesized by a novel method of super-cooling chemical-vapor-deposition.

30 aynoethylenecarboxylate) via low-temperature chemical vapor deposition (50 degrees C) is reported.

31 are formed in a single-step aerosol-assisted chemical vapor deposition (AACVD) process.

32 125 to 650 degrees C using aerosol-assisted chemical vapor deposition (AACVD) with pyridine as the s

33 By a novel in situ chemical vapor deposition, activated N-doped hollow carb

34 r beam epitaxy, atomic layer deposition, and chemical vapor deposition, along with their challenges,

35 otubes via arc discharge, laser ablation and chemical vapor deposition and functionalizing carbon nan

36 Chemical vapor deposition and growth dynamics of highly

37 the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing.

38 ed with 50-250 nm of PSO via plasma-enhanced chemical vapor deposition and then functionalized with e

39 GN was produced by chemical vapor deposition and transferred to titanium vi

40 y the SPR signal by growing graphene through chemical vapor deposition and, second, to control the im

41 ent thicknesses, grown in a microwave plasma chemical vapor deposition apparatus.

42 Here we present a chemical vapor deposition approach to TLG growth that yi

43 lable methods using mechanical agitation and chemical vapor deposition are adopted.

44 of the graphene-catalyst interaction during chemical vapor deposition are investigated using in situ

45 reliability of large-area graphene grown by chemical vapor deposition are often limited by the prese

46 ing diodes, and diamond films fabricated via chemical vapor deposition are the most popular organic b

47 on large-area monolayer graphene produced by chemical vapor deposition are used for label-free electr

48 t-Co alloyed nanocatalysts are generated via chemical vapor deposition-assisted facile one-pot synthe

49 films of Ge(1-x)Sn(x) alloys are created by chemical vapor deposition at 350 degrees C on Si(100).

50 The reaction of Ti(NMe(2))(4) with SiH(4) in chemical vapor deposition at 450 degrees C yielded thin

51 ynthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 de

52 presented, grown using atmospheric pressure chemical vapor deposition, at 450 and 600 degrees C, fro

53 carbide, nitride, and boride are grown using chemical vapor deposition by heating a tantalum-copper b

54 trate how combinatorial atmospheric pressure chemical vapor deposition (cAPCVD) can be used as a synt

55 The approach involves chemical vapor deposition, catalytic particle size contr

56 the seeded growth of graphene under a plasma chemical vapor deposition condition.

57 wall carbon nanotubes (MWCNTs) fabricated by chemical vapor deposition contain magnetic nanoparticles

58 Chemical vapor deposition creates a continuous graphene

59 re of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is c

60 multiwall carbon nanotubes (CNTs) by thermal chemical vapor deposition (CVD) and graphitization of so

61 ms grown on surface-passivated Si wafers via chemical vapor deposition (CVD) and microstructured usin

62 boron nitride (h-BN) films are prepared from chemical vapor deposition (CVD) and readily transferred

63 ns on insulating SiO(2)/Si via seed-promoted chemical vapor deposition (CVD) and substrate engineerin

64 s) with p- and n-dopants were synthesized by chemical vapor deposition (CVD) and were used to constru

65 Here, we demonstrate a chemical vapor deposition (CVD) approach for growing hig

66 rge-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and

67 molybdenum disulfide (MoS2 ) synthesized by chemical vapor deposition (CVD) are studied using a loca

68 The zeolite-like carbons are prepared via chemical vapor deposition (CVD) at 800 or 850 degrees C

69 Single crystal diamond produced by chemical vapor deposition (CVD) at very high growth rate

70 es can be immobilized onto biomaterials by a chemical vapor deposition (CVD) coating strategy.

71 The predoping of N by chemical vapor deposition (CVD) dramatically increases t

72 s of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source pre

73 In most applications based on chemical vapor deposition (CVD) graphene, the transfer f

74 nd "green polymer" parylene-C, to conducting chemical vapor deposition (CVD) grown graphene.

75 We demonstrate the chemical vapor deposition (CVD) growth of 2-lobed symmet

76 ew observations of the mechanisms underlying chemical vapor deposition (CVD) growth of fibrous carbon

77 Here, we report the chemical vapor deposition (CVD) growth of large-area (>2

78 Thus, direct control over the product during chemical vapor deposition (CVD) growth of SWNT is desira

79 Direct chemical vapor deposition (CVD) growth of wafer-scale hi

80 Chemical vapor deposition (CVD) has become a promising a

81 Chemical vapor deposition (CVD) has been the prevailing

82 Metallic Mo clusters grown by Mo(CO)(6) chemical vapor deposition (CVD) have a constant size ind

83 layers were grown on a sharp tungsten tip by chemical vapor deposition (CVD) in a stepwise manner wit

84 a pyrolytic carbon nanoelectrode obtained by chemical vapor deposition (CVD) inside a quartz nanopipe

85 Chemical vapor deposition (CVD) is a promising method fo

86 nt process temperatures in a plasma-enhanced chemical vapor deposition (CVD) is demonstrated using mu

87 kes with gradually shrinking basal planes by chemical vapor deposition (CVD) is demonstrated.

88 m, large area TMDs on graphene substrates by chemical vapor deposition (CVD) is limited by slow later

89 Graphene produced by chemical vapor deposition (CVD) is polycrystalline, and

90 -on-graphene film by molten copper-catalyzed chemical vapor deposition (CVD) is reported.

91 Chemical vapor deposition (CVD) is widely used for the e

92 uniform single-layer WS2 film by a two-step chemical vapor deposition (CVD) method followed by a las

93 We describe a chemical vapor deposition (CVD) method for the surface m

94 Especially, the facile chemical vapor deposition (CVD) method has enabled morph

95 ide (Fe(3)B) nanowires were synthesized by a chemical vapor deposition (CVD) method on either silicon

96 rface of catalytically activated silica by a chemical vapor deposition (CVD) method using hexane as t

97 g" of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method.

98 In this work, ethanol-chemical vapor deposition (CVD) of a grown p-type semico

99 The method is based on chemical vapor deposition (CVD) of a photodefinable coat

100 BNNT cap structures form during Ni-catalyzed chemical vapor deposition (CVD) of ammonia borane.

101 opically engineered spacer layer prepared by chemical vapor deposition (CVD) of functional polymers.

102 bly on single-wall and multi-wall CNTs using chemical vapor deposition (CVD) of methane without the p

103 tworks by forming hydrophobic barriers using chemical vapor deposition (CVD) of trichlorosilane (TCS)

104 ved in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common s

105 graphene films are prepared predominantly by chemical vapor deposition (CVD) on a variety of substrat

106 oncentric tube (CT) reactor for roll-to-roll chemical vapor deposition (CVD) on flexible substrates,

107 rted by substrate-scale growth of MoS2 using chemical vapor deposition (CVD) on non-birefringent ther

108 es of graphene nanoribbon (GNR) formation by chemical vapor deposition (CVD) on top of Au(111) surfac

109 growth of single layers can be done also by chemical vapor deposition (CVD) or via reduction of sili

110 Chemical vapor deposition (CVD) polymerization directly

111 Polymers prepared by chemical vapor deposition (CVD) polymerization have foun

112 For this purpose, chemical vapor deposition (CVD) polymerization is used t

113 The chemical vapor deposition (CVD) polymerization of metall

114 lylene-co-p-xylylene), which are prepared by chemical vapor deposition (CVD) polymerization of the co

115 Chemical vapor deposition (CVD) polymerization utilizes

116 strate, poly-p-xylylene coatings prepared by chemical vapor deposition (CVD) polymerization, for surf

117 ssembled by a unique, single-step, catalytic chemical vapor deposition (CVD) process consisting of di

118 Here we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive

119 Here we report a controllable two-step chemical vapor deposition (CVD) process for lateral and

120 ate, followed by carbon deposition through a chemical vapor deposition (CVD) process with methane as

121 ed magnesiothermic reduction with subsequent chemical vapor deposition (CVD) process.

122 Graphene growth on metal films via chemical vapor deposition (CVD) represents one of the mo

123 ithic and macroporous graphene foam grown by chemical vapor deposition (CVD) served as the scaffold o

124 Here, we report a facile chemical vapor deposition (CVD) strategy to synthesize t

125 Here, we report high-yield thermal chemical vapor deposition (CVD) synthesis of CNTs cataly

126 arbon seeds can be exploited to initiate the chemical vapor deposition (CVD) synthesis of graphene to

127 ibbons of carbon nanotubes directly from the chemical vapor deposition (CVD) synthesis zone of a furn

128 onducted using the probe in conjunction with chemical vapor deposition (CVD) techniques.

129 Chemical vapor deposition (CVD) through sulfidation of M

130 A film of CNTs was deposited by chemical vapor deposition (CVD) to form the stationary p

131 sferring graphene synthesized using scalable chemical vapor deposition (CVD) to polycarbonate track-e

132 the direct growth of carbon nanotube tips by chemical vapor deposition (CVD) using ethylene and iron

133 Samples prepared by chemical vapor deposition (CVD) using pyridine on copper

134 mically inert CNT arrays were synthesized by chemical vapor deposition (CVD) using thin films of Fe a

135 Ru particles were grown by chemical vapor deposition (CVD) via a Ru(3)(CO)(12) prec

136 large flakes of few-layered structures using chemical vapor deposition (CVD) wherein the top layers a

137 pressure high temperature (HPHT) growth and chemical vapor deposition (CVD), how each is allowing ev

138 nar heterojunction perovskite solar cells by chemical vapor deposition (CVD), with a solar power conv

139 spheric pressure, by direct deposition or by chemical vapor deposition (CVD), without the use of hydr

140 Here, we demonstrate a low-temperature chemical vapor deposition (CVD)-based van der Waals (vdW

141 Chemical vapor deposition (CVD)-grown classical transiti

142 lcohol after the first cycle shows unlimited chemical vapor deposition (CVD)-type growth.

143 conductor nanowires prepared by Au-catalyzed chemical vapor deposition (CVD).

144 nd sensing applications of graphene grown by chemical vapor deposition (CVD).

145 using commonly used standard copper foils in chemical vapor deposition (CVD).

146 onally directed nanotube growth method using chemical vapor deposition (CVD).

147 of the Raman active modes in SWNTs grown by chemical vapor deposition (CVD).

148 0-microm diameter), using microwave-assisted chemical vapor deposition (CVD).

149 substrate by direct current plasma enhanced chemical vapor deposition (DC-PECVD) method.

150 in few-layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking conf

151 Combining nitrogen delta-doping during chemical vapor deposition diamond growth and localized e

152 able fraction of metallic nanotubes grown by chemical vapor deposition exhibits strongly gate voltage

153 It is established by chemical vapor deposition experiments and first-principl

154 The floating catalyst chemical vapor deposition (FC-CVD) process permits macro

155 and a supramolecular precursor, followed by chemical vapor deposition for the synthesis of dual-laye

156 e films were deposited by microwave-assisted chemical vapor deposition, for 1-2 h, using a 0.5% CH4/H

157 s were deposited as a thin film by catalytic chemical vapor deposition from either CO or C2H4 as the

158 f nitrogen in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic re

159 architecture based on multiple intercalated chemical vapor deposition graphene monolayers distribute

160 s and open up directions for applications of chemical vapor deposition graphene on flexible substrate

161 xplore the direct transfer via lamination of chemical vapor deposition graphene onto different flexib

162 fabricated on oxidized silicon wafers using chemical vapor deposition grown carbon nanotubes that we

163 Here we demonstrate fully-suspended chemical vapor deposition grown graphene microribbon arr

164 environment of the generated hot carriers on chemical vapor deposition grown large area nanopatterned

165 Chemical vapor deposition grown multilayer graphene was

166 However, irreversible degradation of chemical vapor deposition-grown monolayer TMDs via oxida

167 boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boro

168 The bilayer grain boundaries (GBs) in chemical-vapor-deposition-grown large-area graphene are

169 Chemical vapor deposition growth of 1T' ReS2x Se2(1-x) a

170 Chemical vapor deposition growth of 2D semiconductors su

171 In this work, chemical vapor deposition growth of highly crystalline f

172 We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenu

173 The chemical vapor deposition growth of unusual arrangements

174 ng of Fe atoms into MoS(2) monolayers in the chemical vapor deposition growth.

175 orbent film synthesized from C2H4-CVD (CVD = chemical vapor deposition) had higher CNT density and th

176 Chemical vapor deposition has demonstrated the best way

177 investigated using hyperbaric-pressure laser chemical vapor deposition (HP-LCVD).

178 propargyl methacrylate) (PPMA) via initiated chemical vapor deposition (iCVD) and poly(allylamine) (P

179 stics is demonstrated by employing initiated chemical vapor deposition (iCVD) for polymerization of t

180 In this article, the technique of initiated chemical vapor deposition (iCVD) is evaluated for electr

181 0.5 mm on a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures usin

182 ubjects since its successful development via chemical vapor deposition in the past decade.

183 n nanofibers (CNFs) grown by plasma enhanced chemical vapor deposition is found to be effective for t

184 Chemical vapor deposition is one of the most promising a

185 ene single-crystal domains on Cu foils using chemical vapor deposition is reported.

186 WSe(2) films with Re atoms via metal-organic chemical vapor deposition is reported.

187 lateral heterostructure via direct growth by chemical vapor deposition is reported.

188 Graphene grown by chemical vapor deposition is transferred by a very simpl

189 nedioxythiophene) (PEDOT) grown by oxidative chemical vapor deposition is used to fabricate transpare

190 Chemical vapor deposition is used to grow single layer g

191 Initiated chemical vapor deposition is used to synthesize a novel

192 A variant of initiated chemical vapor deposition is used to synthesize a thin f

193 Initiated chemical vapor deposition is used to synthesize a thin f

194 ne from the bottom up, called barrier-guided chemical vapor deposition, is introduced.

195 r h-BN film on wound Cu foil by low pressure chemical vapor deposition (LPCVD) method.

196 er SCG flakes were derived from low pressure chemical vapor deposition (LPCVD) method.

197 reference electrodes) grown by low pressure chemical vapor deposition (LPCVD) system with VLS proced

198 High pressure chemical vapor deposition may open a new way to low cost

199 A chemical vapor deposition method is developed for thickn

200 An oxygen-assisted hydrocarbon chemical vapor deposition method is developed to afford

201 Here, we describe a solvent-free chemical vapor deposition method to prepare high-quality

202 A facile chemical vapor deposition method to prepare single-cryst

203 icrowires were first synthesized by a simple chemical vapor deposition method using Na as the dopant

204 The metallorganic chemical vapor deposition method was successfully used t

205 rge-area synthesis of novel materials by the chemical vapor deposition method.

206 tion metal tellurides are synthesized by the chemical vapor deposition method.

207 their lateral fusion into wider AGNRs, by a chemical vapor deposition method.

208 Herein, we develop a simple chemical-vapor-deposition method to fabricate graphene-i

209 The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred t

210 Most chemical vapor deposition methods for transition metal d

211 For instance, metal organic chemical vapor deposition (MOCVD) emerged in the late 19

212 GaN (PIN) diodes consisting of metalorganic chemical vapor deposition (MOCVD) epitaxial layers grown

213 Ga(Sbx)N1-x is synthesized by metal organic chemical vapor deposition (MOCVD) for solar hydrogen pro

214 vestigate the use of few-layer metal organic chemical vapor deposition (MOCVD) grown BN as a two-dime

215 ting, thermally stable cadmium metal-organic chemical vapor deposition (MOCVD) precursors have been s

216 ose of conventional solid zinc metal-organic chemical vapor deposition (MOCVD) precursors.

217 substrates at 410 degrees C by metal-organic chemical vapor deposition (MOCVD), and their phase struc

218 ctrode of a standard QCM using metal-organic chemical-vapor deposition (MOCVD).

219 Oxidative chemical vapor deposition (oCVD) of conductive polymers

220 ) via vapor printing, specifically oxidative chemical vapor deposition (oCVD), is demonstrated.

221 gle metal-organic framework crystals through chemical vapor deposition of a dimolybdenum paddlewheel

222 based on carbon nanopipets (CNP) prepared by chemical vapor deposition of carbon into prepulled quart

223 Chemical vapor deposition of carbon precursors on Cu-bas

224 tube membranes (CNMs) were prepared by doing chemical vapor deposition of carbon within the pores of

225 d coated Si/SiO(2) surfaces is reported from chemical vapor deposition of Cd[(TeP(i)Pr(2))(2)N](2).

226 finding opens up a new avenue for controlled chemical vapor deposition of crystals through resonant v

227 Chemical vapor deposition of germanium onto the silicon

228 Graphene can grow on metal substrates by chemical vapor deposition of hydrocarbons.

229 position of small-molecules, plasma enhanced chemical vapor deposition of inorganic functional thin f

230 nsparent graphene replicas, fabricated using chemical vapor deposition of methane.

231 , low-energy electron irradiation during the chemical vapor deposition of model Ziegler-Natta catalys

232 onded phases and carbon surfaces prepared by chemical vapor deposition of organic compounds on porous

233 que may be general and should facilitate the chemical vapor deposition of other oxide and nitride mat

234 ad sulfide (PbS) nanowire "pine trees" using chemical vapor deposition of PbCl(2) and S precursors an

235 a DNA nanostructure can modulate the rate of chemical vapor deposition of SiO2 and TiO2 with nanomete

236 de (MnSi(2-x)) with widths down to 10 nm via chemical vapor deposition of the single-source precursor

237 roperties were produced via aerosol-assisted chemical vapor deposition of titanium ethoxide and dopan

238 s single-source molecular precursors for the chemical vapor deposition of UO(2) thin films.

239 have been synthesized as precursors for the chemical vapor deposition of WN(x)C(y), a material of in

240 Recent experimental chemical vapor depositions of silicon at extreme pressur

241 p-i-n junction fibers made by high pressure chemical vapor deposition offer new opportunities in tex

242 layer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coat

243 high-quality single crystals of graphene by chemical vapor deposition on copper (Cu) has not always

244 the transfer of monolayer graphene, grown by chemical vapor deposition on copper foil, to fibers comm

245 Growth of graphene by chemical vapor deposition on metal supports has become a

246 uantities of uniform Ge nanowires (GeNWs) by chemical vapor deposition on preformed, monodispersed se

247 erfluorodecylacrylate) chains with initiated chemical vapor deposition on silicon substrates.

248 ere fabricated by the growth of BDD films by chemical vapor deposition onto sharpened tungsten wires.

249 the sensor electrode using a plasma-enhanced chemical vapor deposition (PECVD) method and function as

250 cid, BTC) was treated with a plasma-enhanced chemical vapor deposition (PECVD) of perfluorohexane cre

251 Using plasma-enhanced chemical vapor deposition (PECVD) process at low tempera

252 tandard photolithography and plasma-enhanced chemical vapor deposition (PECVD) techniques, followed b

253 s (PPFs), often deposited by plasma-enhanced chemical vapor deposition (PECVD), currently attract a g

254 of amorphous Si deposited by plasma-enhanced chemical vapor deposition (PECVD).

255 Herein, we demonstrate the usefulness of chemical vapor deposition polymerization for surface mod

256 ases grown directly on Zn using an initiated-chemical vapor deposition polymerization methodology.

257 Specifically, a pulsed metal-organic chemical vapor deposition process is developed, where pe

258 carbon nanotubes (CNTs) via a novel ethanol chemical vapor deposition process is presented.

259 mmonium iodine (NH(4)I) vapor via a one-step chemical vapor deposition process not only increases the

260 Besides annealing, we developed a chemical vapor deposition process to use Cu NPs as catal

261 structures are synthesized using a one-step chemical vapor deposition process with rapid cooling.

262 HCNT), has been synthesized using a one-step chemical vapor deposition process.

263 rphous glass substrates by a straightforward chemical vapor deposition process.

264 2) and WS(2) films grown using metal-organic chemical vapor deposition process.

265 tion into the infrared range by an efficient chemical vapor deposition process.

266 layer deposition) and MOCVD (= metal-organic chemical vapor deposition) processes in materials scienc

267 nolayers grown by molecular beam epitaxy and chemical vapor deposition, respectively.

268 Herein, a chemical vapor deposition route to ultrathin CoSe nanopl

269 Gas-phase methods, including chemical vapor deposition, show broader promise for the

270 noribbons, and large graphene films grown by chemical vapor deposition showed p-type doping accompani

271 he suitability of current techniques such as chemical vapor deposition, spray and dip coating, and va

272 grown on polymeric carbon nitride (PCN) by a chemical vapor deposition strategy.

273 e crystals via a substrate-buffer-controlled chemical vapor deposition strategy.

274 stalline islands of MoS2 grown via a refined chemical vapor deposition synthesis technique.

275 s synthesized in a Microwave Plasma Assisted Chemical Vapor Deposition System.

276 have been combined with the microwave-plasma chemical vapor deposition technique to explore metastabl

277 scales are fabricated by a strain-engineered chemical vapor deposition technique, giving ~5000 scales

278 of tens of micrometers are synthesized by a chemical vapor deposition technique.

279 is demonstrated employing a microwave plasma chemical vapor deposition technique.

280 cile, low-cost and scalable aerosol assisted chemical vapor deposition technique.

281 ar reactions of silicon nitride diatomics in chemical vapor deposition techniques and interstellar en

282 n doped diamond grown using microwave plasma chemical vapor deposition techniques is found to be idea

283 nanofibers were grown using plasma enhanced chemical vapor deposition to fabricate nanoelectrode arr

284 udy develops a new growth strategy employing chemical vapor deposition to grow monolayer 2D alloys of

285 ynthesized previously by electrically-heated chemical vapor deposition under vacuum conditions were r

286 Floating catalyst chemical vapor deposition uniquely generates aligned car

287 eposited on undoped Si by microwave-assisted chemical vapor deposition using a 4-h growth with a 0.5%

288 hieved by means of microwave plasma-assisted chemical vapor deposition using in-situ-evaporated Fe ca

289 order of centimeters on copper substrates by chemical vapor deposition using methane.

290 grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation h

291 locations over the entire wafer in a single chemical vapor deposition (VCD) process.

292 f high-hardness (up to 37 GPa) B(50)C(2) via chemical vapor deposition was achieved.

293 produced by rf sputtering or plasma enhanced chemical vapor deposition were found to deteriorate due

294 mperatures and pressures compared to thermal chemical vapor deposition where [111]-directed Si NWs ar

295 ividual SWNTs grown on SiO2/Si substrates by chemical vapor deposition with and without metal contact

296 pare fluorine doped tin oxide (FTO) films by chemical vapor deposition with inclusions of different a

297 doped, mesoporous graphene particles through chemical vapor deposition with magnesium-oxide particles

298 r wafer-scale graphene grown on germanium by chemical vapor deposition with non-uniformities and smal

299 single-crystal iron germanium nanowires via chemical vapor deposition without the assistance of any

300 raphene (NG) sheets via atmospheric-pressure chemical vapor deposition, yielding a unique N-doping si