ライフサイエンスコーパス: dislocation

1 d rhegmatogenous retinal detachment, or lens dislocation.

2 fractures, resulting in lens subluxation or dislocation.

3 ubiquitinated HC molecules to accelerate HC dislocation.

4 r dehiscence and subsequent intraocular lens dislocation.

5 uded feelings of uncertainty, isolation, and dislocation.

6 he nano-pillar, which "regulate" the flux of dislocations.

7 volving doors limiting the number of passing dislocations.

8 a strong propensity for forming axial screw dislocations.

9 ate large plastic strain without the help of dislocations.

10 ickness by arresting the formation of misfit dislocations.

11 namely collapsing holes and the movements of dislocations.

12 ) is relaxed at the interface by introducing dislocations.

13 irely different geometries to classic misfit dislocations.

14 ell" defects consisting of a high density of dislocations.

15 an degrade film magnetization via strain and dislocations.

16 he edge and screw components of the twinning dislocations.

17 th of spiral-type nanosheets driven by screw-dislocations.

18 ng deformation) when precipitates are cut by dislocations.

19 than the characteristic distance between the dislocations.

20 such as stacking faults generated by partial dislocations.

21 aligned point defects and climb-dissociated dislocations.

22 herent twin boundaries propagate by twinning dislocations.

23 ost common complication was graft detachment/dislocation (10.78%).

24 ugh heteroepitaxial lattice mismatch(10) and dislocations(11) are not extendable to controllable time

25 al solid due to the stress field of an axial dislocation(14,15), causes a chiral structure in the van

26 l three types of defects: 91.60 +/- 1.77% on dislocations, 93.39 +/- 1.00% on precipitates, and 98.85

27 elby twist, which is associated with a screw dislocation (a chiral topological defect), can drive the

28 itaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release t

29 Dislocation accumulation rates at this scale are smaller

30 itation along TBs accounts for the premature dislocation activities and pronounced strain localisatio

31 We observe that partial dislocation activities result in stable three-dimensiona

32 s until the effective shear stress drops and dislocation activities stop.

33 ape and raises activation barriers governing dislocation activities.

34 Dislocation activity is critical to ductility and the me

35 In general, suppressing dislocation activity leads to brittleness of polycrystal

36 high crystal quality and very few threading dislocations, allowing for further re-growth of the deep

37 ching certain limiting conditions of strain, dislocations alone can no longer relieve mechanical load

38 Impingement is a major source of dislocation and aseptic loosening in total hip arthropla

39 cture that severely impedes the movements of dislocation and grain boundary sliding and provides a ta

40 pin ice lattices in the form of lattice edge dislocations and directly observe the resulting spin con

41 bound states of topological defects of edge dislocations and disclinations.

42 We reveal that Re enriches to partial dislocations and imposes a drag effect on dislocation mo

43 radiation-damaged zircon along the cores of dislocations and is precipitated inside nanopores and al

44 in polycrystalline materials by stabilizing dislocations and may provide a way to create high-energy

45 ng from localised plasticity at the scale of dislocations and microstructure with significant enginee

46 e unexpected dominance of nonscrew character dislocations and numerous slip planes for dislocation gl

47 rty characterizations, the high densities of dislocations and pores are found to be responsible for a

48 create valleys composed of dissociated edge dislocations and ridges where partial dislocations have

49 We also identify likely dislocations and small angle grain boundaries, illustrat

50 ally caused by the dynamic interplay between dislocations and solute atoms.

51 The dislocations and the Al/B4C interfaces provide more hete

52 ardening is a result of interactions between dislocations and the associated increase in dislocation

53 itreous hemorrhage, retinal detachment, lens dislocation, and cyclodialysis cleft with hypotony.

54 plant procedure: cardiac perforation, device dislocation, and femoral vascular access site complicati

55 , growth arrest, avascular necrosis, chronic dislocation, and pathologic fracture.

56 nown to control the activation and motion of dislocations, and despite the fact that most of these ma

57 s and crystalline defects such as vacancies, dislocations, and grain boundaries are essential in dete

58 lattices evolve from structures filled with dislocations, and how local variations at the micrometer

59 n effective barrier that inhibits subsequent dislocation annihilation at free surfaces.

60 Most cases of IOL dislocation are associated with surgical trauma or preex

61 misconception that their recurrent shoulder dislocations are a form of attention-seeking.

62 Recently, it has been demonstrated that dislocations are effective at scattering the remaining m

63 Dislocations are eliminated from the epilayer through di

64 In the synthesis, axial screw dislocations are first introduced into nanowires growing

65 Such dislocations are formed in the highly oriented nanotwinn

66 mage lattice form) and slip (whereby lattice dislocations are generated and move), but determining wh

67 tions and theory modelling, we show that the dislocations are highly active, and we delineate the spe

68 engths and an increase in the edge and screw dislocations are seen as the Al(x)Ga(1-x)N composition i

69 t driven systems containing large numbers of dislocations are subject to the second law of thermodyna

70 Dislocations are the primary drivers of plastic deformat

71 hic defects, such as geometrically necessary dislocations, are reported to influence the redox reacti

72 rom 1993 to 2009, and suggested phenological dislocation as a possible cause.

73 Furthermore, dislocation as depicted by MRI was compared to computed

74 onstrates the effectiveness of dense lattice dislocations as a means of lowering kappaL , but also th

75 are high enough to nucleate hard grain basal dislocations, as observed experimentally.

76 from the grain interior, a consequence of a dislocation-based crack incubation mechanism.

77 y activated rate at which entangled pairs of dislocations become unpinned from each other.

78 lution transmission electron microscopy with dislocations being observed at the film-substrate interf

79 The dislocations between quintuple layers present special in

80 ion grains migrate through the 3D network of dislocation boundaries in deformed crystalline materials

81 to fine scale L1(2) is modeled using Orowan dislocation bowing and by-pass mechanism.

82 edominantly affects the glide of basal plane dislocations (BPDs), thereby reducing device reliability

83 TM dislocation by the P5A-ATPase establishes an additional

84 Intraocular lens decentrations and dislocations can appear at any time, particularly in pat

85 Crystallographic defects such as dislocations can significantly alter material properties

86 ocation density enables the unveiling of the dislocation-carrier dynamic relation in halide perovskit

87 els embedded within WSe2 monolayers, using a dislocation-catalysed approach.

88 p residual network can be used to deduce the dislocation characteristics of a sample of interest usin

89 fects segregated to STGBs are annihilated by dislocation climb.

90 When the dislocation concentration is maximized, one of the lowes

91 governed by a type of correlated 'necklace' dislocation consisting of multiple short component dislo

92 suggested to distinguish disconnections with dislocation content from those with disclination content

93 fault in the basal plane gamma surface, the dislocation core spreading is mainly due to the weak bon

94 on electron microscopy, we resolve the basal dislocation core structure in Bi(2)Te(3), quantifying th

95 al coefficient is directly computed from the dislocation core structure.

96 explained simply by flow models which assume dislocation creep in postperovskite.

97 uction of effective viscosity resulting from dislocation creep in the asthenosphere explains the pecu

98 nd that its mantle sluggishly deforms in the dislocation creep regime.

99 during straining experiments reveals massive dislocation cross-slip from the early stage of plastic d

100 al configurations, with anomalies similar to dislocation defects observed in pattern-forming systems.

101 ge or repositioning surgery, significant IOL dislocation, degree of pseudophakodonesis, and visual ac

102 o their capability for easily storing higher dislocation densities.

103 ree-standing halide perovskite film with low dislocation density and improved carried dynamics.

104 his leads to work softening from a decreased dislocation density and the presence of long segment sta

105 ion dominates accounting for the decrease in dislocation density during cooling is essential.

106 The controlling of dislocation density enables the unveiling of the disloca

107 ons shearing the gamma' precipitates, a high dislocation density in the gamma channels and near the g

108 The averaged dislocation density is reduced by over three orders of m

109 e GaN layers on Si with the lowest threading dislocation density of 1.1 x 10(7) cm(-2) achieved to da

110 lastic flow in which the flow stress and the dislocation density remain constant as long as the condi

111 itaxy is demonstrated to achieve a ultra-low dislocation density, epi-ready Ge/Si virtual substrate o

112 red energy associated with the high retained dislocation density, prior to standard solution treatmen

113 epitaxial halide perovskite with controlled dislocation density.

114 dislocations and the associated increase in dislocation density.

115 Furthermore, the T1 FFE sequence allowed dislocation depiction comparable to CT.

116 back stresses originating from heterogeneous dislocation distributions and resultant intragranular re

117 an amount of strain, resulted from the screw-dislocation-driven growth mechanism as well as the stack

118 tes by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism.

119 Aluminium typically deforms via full dislocations due to its high stacking fault energy.

120 nsity and configurational changes of crystal dislocations during plastic deformation influence the me

121 e show how gBCDI resolves grain boundary and dislocation dynamics in individual grains in three-dimen

122 Dislocation dynamics models are usually used as mesoscal

123 olecular dynamics and physics-based discrete dislocation dynamics simulations.

124 o couple primer extension with template base dislocation, ensuring that the unpaired templating bases

125 ect relaxation processes, while regions with dislocations exhibit faster defect interaction dynamics.

126 ealing, which creates nanovoids that attract dislocations, facilitating their subsequent annihilation

127 h has been attributed to [Formula: see text] dislocations failing to accommodate plastic strain.

128 atible flow behavior of the MG phase and the dislocation flux in the crystals enable homogeneous plas

129 This patient presents IOL dislocation following routine exam, suggesting the need

130 e SLS pre-layer also introduces extra misfit dislocations for the semi-polar, but not the c-plane cas

131 s emerges, separated by a network of partial dislocations for twist angles theta < 2 degrees .

132 all Bi-Sn ratios along with more pronounced dislocation formation within the nano-alloys.

133 ur images also demonstrate that the types of dislocations formed at the crystal/substrate interface v

134 structures, low-angle grain boundaries, and dislocations formed during manufacturing, while high uni

135 CP26, a small molecule inhibitor of protein dislocation from the ER lumen to the cytosol, which is a

136 ive parameters were recorded including graft dislocation (GD), partial detachment, and pre- and post-

137 od that phyllosilicates could deform only by dislocation glide along layers and could not accommodate

138 strain bursts consist of numerous individual dislocation glide events, which span over minuscule time

139 erials consists of an ensemble of collective dislocation glide processes, which lead to strain burst

140 The model considers thermally-activated dislocation glide through helium-defect obstacles, whose

141 gns under stress along slip planes and limit dislocation glide to small distances with high nucleatio

142 er dislocations and numerous slip planes for dislocation glide.

143 in fields lead to considerable resistance to dislocation glide.

144 se grains, edge-type geometrically necessary dislocations (GNDs) dominate, and their dislocation line

145 engthening mechanisms: both partial and full dislocation hardening plus suppression of grain boundary

146 sms such as solid solution hardening, forest dislocation hardening, as well as mechanical twinning le

147 Crystallographic dislocation has been well-known to be one of the major c

148 d edge dislocations and ridges where partial dislocations have recombined.

149 a number of mechanisms creating the desired dislocations homogeneously distributed within the grains

150 However, how dislocation impacts its carrier dynamics in the 'defects

151 and proceeded with the emission of a partial dislocation in between these two stacking faults.

152 tions included 5 cases of conjunctival graft dislocation in the Evicel group, 1 case of pyogenic gran

153 s are shown to preferentially associate with dislocations in a manner previously recognised for atomi

154 ation consisting of multiple short component dislocations in adjacent twins, connected like the links

155 ended core dislocations, such as <110> {111} dislocations in Al-based and Ti-based intermetallic comp

156 rphous materials, analogous to vacancies and dislocations in crystals, remains elusive.

157 the Peierls stress, of planar-extended core dislocations in face-centered cubic structures.

158 ins and, sometimes, the elimination of basal dislocations in hard grains altogether.

159 h in turn activates more [Formula: see text] dislocations in magnesium to accommodate plasticity, lea

160 study of the dissociated vacancies at screw dislocations in MgO is carried out.

161 cycle lead to much lower densities of prism dislocations in soft grains and, sometimes, the eliminat

162 omistic calculation of the formation of edge dislocations in such films.

163 panied by misfit strain and the formation of dislocations in the subsurface region via a surface diff

164 eak widths, it was determined that threading dislocations in the top 6 microns of the wafer increase

165 Additionally, the density of threading dislocations in these region is one order of magnitude l

166 example of how the dynamics of defects like dislocations induced by external stresses alters materia

167 the grain boundary is commensurate with its dislocation-induced strain field, providing a strategy f

168 This study identified a novel dislocation inhibitor, CP26, that shows potent anti-DENV

169 of plastic deformation, resulting in strong dislocation interactions between multiple slip systems.

170 eation, dissociation/recombination behavior, dislocation interactions/reactions), evolution of damage

171 including structural design (point defects, dislocations, interfaces, inclusions, and pores), multid

172 sary dislocations (GNDs) dominate, and their dislocation line directions are almost parallel to the c

173 Finally, a dislocation line model is developed to predict the role

174 he lattice polarization, Burgers vector, and dislocation-line direction.

175 ropy, which induce a large anisotropy in the dislocation-line energy.

176 Al-Fe-Be) were observed inside grains, along dislocation lines and at GBs.

177 ystallographic defects in structural alloys: dislocation lines, precipitates and voids.

178 hat grow along <110>Mg in bulk hcp-Mg and on dislocation lines.

179 nd states of self-stress localized along the dislocation loop to the handedness of the vector triad f

180 e vary according to the nucleation face, and dislocation loops are observed that have entirely differ

181 c incubation period for the formation of <c> dislocation loops in zirconium alloys.

182 g to alpha-SiC, with radiation-induced Frank dislocation loops serving as the apparent nucleation sit

183 ns of the material by including defect lines-dislocation loops-that are unique to three dimensions.

184 which is likely governed by the formation of dislocation loops.

185 d vacancy platelets can directly produce <c> dislocation loops.

186 olera toxins are known to hijack the protein dislocation machinery to reach the cytosol, where they e

187 e deeper charging reactions, indicating that dislocations may facilitate redox reactions in layered o

188 Understanding how edge misfit dislocations (MDs) form in a GeSi/Si(001) film has been

189 k film-substrate interaction and low density dislocation mechanism in remote epitaxy, respectively.

190 anche distributions vis-a-vis the archetypal dislocation mechanisms in face-centered cubic (FCC) and

191 odel LiNi(1/3) Mn(1/3) Co(1/3) O(2) cathode, dislocation-mediated ion diffusion is kinetically favora

192 ify the conditions under which the limits of dislocation-mediated plasticity are reached and to under

193 ant mechanism of deformation switches from a dislocation-mediated process to grain boundary sliding,

194 and dip of 85 degrees by applying the Okada dislocation model considering a single patch with a homo

195 A half-space dislocation model is used to simulate the theoretical va

196 Our observations of dislocation motion and atomistic calculations unveil the

197 e in metals manifests itself as irreversible dislocation motion followed by crack initiation and prop

198 nning, and increases the lattice friction to dislocation motion via a nanoscale segment detrapping me

199 SFs) contribute to strengthening by impeding dislocation motion, the contribution of SF strengthening

200 y landscape that increases the resistance to dislocation motion, which can also be retarded by other

201 and the matrix acted as a strong barrier to dislocation motion.

202 th simultaneously, there must be barriers to dislocation motion.

203 grain boundary sliding (GBS) accommodated by dislocation movement and static recrystallization.

204 The exponents for dislocation movement are greater (epsilon = 1.92, tau' =

205 al dislocations and imposes a drag effect on dislocation movement, thus reducing the creep strain rat

206 lapse generates very strong AE signals while dislocation movements create more but weaker AE signals.

207 no-pillars become too small to sustain large dislocation movements, the effect is hence independent o

208 lled for the porous collapse but not for the dislocation movements.

209 the rugged atomic environment through which dislocations must navigate.

210 ort, the 20-year cumulative incidence of IOL dislocation needing surgical attention was significantly

211 servations provide mechanistic detail of how dislocations nucleate and migrate at heterointerfaces in

212 These dislocations nucleate near numerous heterogeneities.

213 Bragg coherent diffractive imaging, we image dislocations nucleated deep in a Pd nanoparticle during

214 ndom selection of the mature QDs relaxing by dislocation nucleation at a later stage in the growth, i

215 erned by the hydrogen-induced suppression of dislocation nucleation at the free surface of NWs.

216 transition from homogeneous to heterogeneous dislocation nucleation occurs as the interface spacing i

217 the threshold stress is approached, multiple dislocation nucleation sites appear simultaneously from

218 ple mechanistic model is presented to relate dislocation nucleation with plasticity in silicon.

219 on behavior, plastic deformation mechanisms (dislocation nucleation, dissociation/recombination behav

220 ere deformation and failure are dominated by dislocation nucleation.

221 ase morphology affects the critical size for dislocation nucleation.

222 Hip instability or dislocation occurred in 34 patients (4.7%) assigned to t

223 In the MFS group, significantly more IOL-dislocations occurred than compared to the non-MFS group

224 including falls from heights, fractures and dislocations, ocular injuries, and cuts was 22% (7-37; I

225 nterocytes which are characterized by apical dislocation of claudins are CPE-susceptible.

226 to engage FcRn, consequently initiating the dislocation of FcRn from the ER to the cytosol and facil

227 is predicted to stem from the electrostatic dislocation of indole highest occupied molecular orbital

228 ield (California) were investigated, and the dislocation of microorganisms from the sediment into the

229 the buckling of the anthracene framework and dislocation of the boron atoms from the planes of the ph

230 luding assessment for pseudophakodonesis and dislocation of the IOL.

231 f the target cytosine and H257, resulting in dislocation of the target cytosine base from the catalyt

232 condary changes in the active site entailing dislocations of the ATP phosphates, altered contacts to

233 mechanical testing, that [Formula: see text] dislocations of various characters can accommodate consi

234 Understanding the effect of dislocations on the mass transport in ionic ceramics is

235 rn Wasatch Fault at c. 0.5 mm yr(-1) tensile dislocation opening in the eastern Sevier Desert.

236 s, afferent pupillary defect in 6 eyes, lens dislocation or subluxation in 5 eyes, and cyclodialysis

237 st-operative eyelet fracture associated with dislocation or subluxation.

238 codes for falls and simultaneous fractures, dislocations, or head trauma in inpatient or outpatient

239 the dissociated nature of vacancies at screw dislocations, or more generally, at a wide range of low-

240 the conservative motion of Shockley partial dislocation pairs, which fundamentally suppress damage a

241 This influences the selection of dislocation pathways in slip, faulting, and twinning, an

242 The results are compared with a theoretical dislocation pile-up model, from which slip system resist

243 oduce slip in soft grains, leading to strong dislocation pile-ups at boundaries with hard grains.

244 s and low-angle grain boundaries can enhance dislocation pinning and promote twinning.

245 Using discrete dislocation plasticity modelling complemented by transmi

246 Dislocations play a critical role during synthesis and p

247 d non-destructive method for visualising the dislocations present within crystals, and gives insight

248 her concentration of geometrically necessary dislocations provide deeper charging reactions, indicati

249 ening) of gamma ' particles that facilitates dislocation rearrangement and annihilation.

250 the UFG Cu due to the suppression of dynamic dislocation recovery.

251 ormation, despite the region surrounding the dislocations remaining in the hydrogen-poor phase.

252 mposite of deep infection requiring surgery, dislocation requiring closed or open reduction, or revis

253 figure of merit, which can be explained by a dislocation scattering model.

254 ons are eliminated from the epilayer through dislocation-selective electrochemical deep etching follo

255 at theta -> 0 to a hexagonal array of screw dislocations separating large-area 2H domains.

256 mmonly observed, and plates containing mixed dislocation shapes have intermediate noncentrosymmetric

257 p results in progressive work hardening with dislocations shearing the gamma' precipitates, a high di

258 pproach, we utilize high-throughput discrete dislocation simulations for systems of widths that range

259 ve, change the activated slip systems, alter dislocation slip and twinning behavior, affect where and

260 he rapid decreases in stress associated with dislocation slip in metallic single crystals.

261 The dislocation slip system in each of the forty crystal gra

262 ed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-

263 ation is not well understood; as compared to dislocation slip, twinning induced plasticity (TWIP) and

264 As the dislocations slip inside the crystal grains and pile up

265 The crack in the CG Cu was blunted by dislocation-slip mediated plastic deformation, while the

266 olute cloud formation, and a third one where dislocation/solute coevolution leads to jerky flow as a

267 Plates with triangular dislocation spirals form noncentrosymmetric stacking tha

268 ced photoluminescence, plates with hexagonal dislocation spirals form the bulk 2H layer stacking comm

269 g the growth of layered materials with screw-dislocation spirals on non-Euclidean surfaces and show t

270 ron microscopy to reveal dramatic changes in dislocation structure and sub structure in pure alpha-Fe

271 ron microscopy unveil the lattice/atomic and dislocation structure of the remote epitaxial film.

272 rest of it contributes to the development of dislocation structures.

273 study more complicated planar-extended core dislocations, such as <110> {111} dislocations in Al-bas

274 ed an IOP decrease after late in-the-bag IOL dislocation surgery that seemed to be more pronounced wi

275 Mean time from cataract surgery to dislocation surgery was 12 years 6 months (range 3 years

276 f the 800 patients at risk (1.2%) had needed dislocation surgery.

277 atistical measure to the characteristic mean dislocation swept distance, which allows for the scaling

278 eity, including strain fields and individual dislocations, that can be used under operando conditions

279 Away from the dislocation, the magnets are locally unfrustrated, but f

280 and propagating via coherent transformation dislocation; the nanorod is reduced to hafnium on coolin

281 Dislocations then emanate from these sites with time, lo

282 The thermodynamic dislocation theory (TDT) is based on two highly unconven

283 tion of separated but closely spaced partial dislocations, thus enabling an effective bypassing of th

284 particles, including geometrically necessary dislocations, tilt boundaries, and mixed defects.

285 high cutting stress (the stress required for dislocations to cut through coherent precipitates and th

286 tice distortions and geometrically necessary dislocation underlying indents which agree quantitativel

287 tional inhomogeneity, high concentrations of dislocation walls/sub-grain boundary networks and high c

288 2 and P = 0.01, respectively), whereas graft dislocation was not (P = 0.61).

289 se ratio (aSNR), nerve diameter and fracture dislocation were evaluated by two radiologists and corre

290 ative complications, and postoperative graft dislocation were investigated for an association with LE

291 lar InGaN LEDs is different from the role of dislocations which normally act as non-radiative recombi

292 ent was diagnosed with late intraocular lens dislocation, which was subsequently for proper repositio

293 quently interact and evolve with the partial dislocations, which migrate from domain to domain with t

294 Compressed nano-pillars crackle from moving dislocations, which reduces plastic stability.

295 The formation of dislocations, which severely degrade electronic/photonic

296 alloys are porous and show a high density of dislocations, which slide under external tension and com

297 he first example of the targeting of host ER dislocation with small molecules to combat flavivirus in

298 In contrast, dissociated dislocations with Burgers vector of c/2[001] have high g

299 n the rates of nucleation and propagation of dislocations within the crystal structures of HOIPs and

300 ain boundary properties and the emergence of dislocations within the nano-alloys.