ライフサイエンスコーパス: epitaxy

1 anism was attributed to "size-dependent soft epitaxy".

2 servoir (for example, liquid- or vapor-phase epitaxy).

3 om Fe electrodes deposited by molecular beam epitaxy.

4 = 0.5 have been fabricated by molecular beam epitaxy.

5 interface, a unique feature of van der Waals epitaxy.

6 h-temperature plasma-assisted molecular beam epitaxy.

7 es WS2 and MoS2 by metalorganic vapour phase epitaxy.

8 axis-oriented BaTiO3 grown by molecular beam epitaxy.

9 on cobalt substrates by using molecular beam epitaxy.

10 grown directly on Si(001) by molecular beam epitaxy.

11 Si and sapphire substrates by molecular beam epitaxy.

12 are grown on h-BN dielectric layers via vdW epitaxy.

13 ed conditions exhibit excellent cube-on-cube epitaxy.

14 variable thickness, grown by molecular beam epitaxy.

15 e prepared by plasma-assisted molecular beam epitaxy.

16 ting the existence of cooperative multilayer epitaxy.

17 uctures grown by organometallic vapour phase epitaxy.

18 es toward controlling film morphology during epitaxy.

19 ucleation and growth laws that govern atomic epitaxy.

20 aces were built at 30 K using molecular beam epitaxy.

21 GaInAs quantum wells grown by molecular beam epitaxy.

22 been successfully grown using molecular beam epitaxy.

23 g an opportunity for polymorphic control via epitaxy.

24 h techniques with emphasis on molecular beam epitaxy.

25 onium; n = 1, 3, 5) superlattice by chemical epitaxy.

26 y 60 degrees rotation by position-controlled epitaxy.

27 5.4 to 8.6 eV can be grown by molecular beam epitaxy.

28 e grown on HOPG substrate via molecular beam epitaxy.

29 n film FeSn synthesized using molecular beam epitaxy.

30 ystalline TiO(001) film using molecular beam epitaxy.

31 erovskite oxide substrates by molecular beam epitaxy.

32 combination of cation exchange and solution epitaxy.

33 ntrolling the termination via molecular beam epitaxy.

34 e orientation dictates the outcome of remote epitaxy.

35 n-controlled manner by hybrid molecular beam epitaxy.

36 elf-catalyzed plasma-assisted molecular beam epitaxy.

37 ility to strain engineer these compounds via epitaxy.

38 tificial lattices without the constraints of epitaxy.

39 ator layers, fabricated using molecular beam epitaxy.

40 n the c-plane of sapphire using sputter beam epitaxy.

41 it the selection of substrates for thin film epitaxy.

42 0 um h(-1) using dynamic hydride vapor phase epitaxy.

43 h window accessible in hybrid molecular beam epitaxy.

44 Co(2)TiGe thin films grown by molecular beam epitaxy.

45 monolayer and bilayer through molecular beam epitaxy.

46 es onto substrates via stepwise liquid-phase epitaxy.

47 r VSe(2) grown on graphite by molecular-beam epitaxy.

48 s are the only seed layers for van der Waals epitaxy.

49 es on graphitic substrates by molecular beam epitaxy.

50 dio-frequency plasma assisted molecular beam epitaxy.

51 ) foils using plasma-assisted molecular beam epitaxy.

52 substrates by plasma-assisted molecular beam epitaxy.

53 the Ru(0001) substrate using molecular beam epitaxy.

54 with an MgO barrier grown by molecular beam epitaxy.

55 lly unavoidable in highly lattice-mismatched epitaxy(9-11).

56 of the IrO2 film grown using molecular-beam epitaxy affords the ability to extract the surface oxyge

57 It is thus named adaptive ionic layer epitaxy (AILE).

58 We use an integrated oxide molecular-beam epitaxy and angle-resolved photoemission spectroscopy sy

59 and WS(2) monolayers grown by molecular beam epitaxy and chemical vapor deposition, respectively.

60 ective nucleation sites, followed by lateral epitaxy and coalescence into a continuous film.

61 GaN, exhibiting substantial improvements in epitaxy and crystallinity relative to nanocrystalline sp

62 y pinhole-free film growth while maintaining epitaxy and high crystal quality.

63 by employing a combination of molecular beam epitaxy and in situ angle-resolved photoemission spectro

64 (0.2)NiO(2) films prepared by molecular beam epitaxy and in situ atomic-hydrogen reduction.

65 l/Mn(3)Sn heterostructures by molecular beam epitaxy and introduce perpendicular magnetic anisotropy

66 l for on-chip photonics without the need for epitaxy and is at CMOS compatible processing parameters

67 sed germanene was obtained by molecular beam epitaxy and mechanical exfoliation.

68 n on silicon substrates using molecular beam epitaxy and studied by scanning tunneling spectroscopy.

69 guration arises from optimal two-dimensional epitaxy and that among the six polymorphs of 1, only the

70 ) ultrathin films by reactive molecular beam epitaxy and transfer them to diverse substrates, in part

71 desired improvements in electronic mobility, epitaxy, and crystal quality that provide encouragement

72 dic nanostructures, including self-assembly, epitaxy, and exfoliation, have paved the way to rational

73 d with oxygen plasma-assisted molecular beam epitaxy, and recombinant MtrC or OmcA molecules coupled

74 th sides of the transition by molecular beam epitaxy, and using polarized neutron reflectometry to me

75 tion Ti metal surface using a molecular beam epitaxy approach and O2 intercalation method, which is c

76 Here, via a remote epitaxy approach using polar substrates coated with grap

77 O3 thin films grown by hybrid molecular beam epitaxy are demonstrated, meeting the stringent requirem

78 take several days to grow by molecular-beam epitaxy are deposited in 8 minutes by close-spaced subli

79 rity GaN layers grown by hydride vapor phase epitaxy are studied by steady-state and time-resolved ph

80 ale architecture can complement strain-layer epitaxy as a tool to strain engineer magnetoelectric mat

81 erovalent interface growth by molecular beam epitaxy as a way to modify the interface properties.

82 itaxy cannot be directly applied to solution epitaxy, as the interactions between the substrates and

83 d using atomic layer-by-layer molecular beam epitaxy at several doping levels.

84 x </= 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature of 378 degrees C have b

85 self-assembly at the mesoscale and inorganic epitaxy at the atomic scale.

86 niques for borophene, such as molecular beam epitaxy, atomic layer deposition, and chemical vapor dep

87 les were grown using a simple molecular beam epitaxy-based fabrication protocol, and monitoring their

88 The epitaxy can be extended to nanocrystalline substrates.

89 Our results demonstrate that epitaxy can be used to grow single-crystal analogous mat

90 This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temper

91 r, the established principles of vapor-phase epitaxy cannot be directly applied to solution epitaxy,

92 tion has been facilitated mainly by seeding, epitaxy, charged surfaces or mechanical means.

93 A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quali

94 nd Ge(100) platforms at gas-source molecular epitaxy conditions.

95 fabrication of 2D stanene by molecular beam epitaxy, confirmed by atomic and electronic characteriza

96 the Au nanodisks associated with the twisted epitaxy, consistent with the Moire registry of the two M

97 hods such as wafer bonding or molecular beam epitaxy, cost-effective mass production methods for CMOS

98 These findings indicate that remote epitaxy could be designed and engineered by means of har

99 e cases that can only be observed for remote epitaxy, distinguishable from other two-dimensional mate

100 mical terminations and thus enable selective epitaxy during the VAN growth.

101 solutions using electrochemical liquid phase epitaxy (ec-LPE) at low temperatures (T </= 90 degrees C

102 still interact with the layers grown during epitaxy (epilayers), as in the case of the so-called wet

103 tic bottlenecks play an important role in NC epitaxy, especially in the transition from sub-monolayer

104 rties, and the dopant diffusion during shell epitaxy, etc.

105 Although the droplet epitaxy fabrication method allows for a wide range of ma

106 favorization of the intercalation versus the epitaxy for both C-terminated and Si-terminated 4H-SiC s

107 the successful use of hybrid molecular beam epitaxy for SrTiO(3) growth that does not require an ind

108 re designed and fabricated by molecular beam epitaxy for use in mid-infrared (MIR) evanescent field l

109 Here we report the use of epitaxy-free wet chemical methods to create strained nan

110 initio studies, we have discovered that the epitaxy from the substrate imposes a magnetoelastic anis

111 n two-dimensional materials can allow direct epitaxy from the substrate, which, in combination with l

112 We show that molecular beam epitaxy gives a controllable bottom-up approach to grow

113 nal axis in single crystals and liquid phase epitaxy grown thin films of barium hexaferrite.

114 eport on the PL properties of Molecular Beam Epitaxy grown, SC InAs NWs.

115 We used molecular beam epitaxy-grown thin films of LaPd(x)Sb2 and T(')-La2CuO4

116 transmission spectroscopy on molecular beam epitaxy-grown thin films of YbRh(2)Si(2), a model strang

117 initiated mid-way through the molecular-beam-epitaxy growth and embedded into the epilayer, via epita

118 on of vapor-liquid-solid (VLS) and two-phase epitaxy growth mechanisms.

119 provides an understanding of molecular beam epitaxy growth of 2D materials on three-dimensional subs

120 Here, we report the van der Waals epitaxy growth of few-layer antimonene monocrystalline p

121 The approach is based on the confined epitaxy growth of WS(2) in ordered mesoporous graphene d

122 mica which is the first time beta-Ga(2)O(3) epitaxy growth on any flexible substrate.

123 Here, by controlling the molecular beam epitaxy growth parameters, we demonstrate the successful

124 has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained

125 , including flexible ones, via van der Waals epitaxy growth.

126 wth of SrTiO(3) on silicon by molecular beam epitaxy has opened up the route to the integration of fu

127 sembled quantum dots grown by molecular beam epitaxy have been a hotbed for various fundamental resea

128 GaSe thin film synthesized by molecular beam epitaxy have been demonstrated via in-situ angle-dispers

129 erlattice structures grown by molecular beam epitaxy have been investigated for applications in therm

130 f carbon in GaN grown by hydride vapor phase epitaxy (HVPE).

131 CoSi thin films, deposited by molecular beam epitaxy in a thickness range between 2 and 82.5 nm.

132 nate (SrTiO3) films via oxide molecular beam epitaxy in direct contact with silicon, with no interfac

133 Oxide epitaxy in materials systems achieved through convention

134 demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineerin

135 ng with the opposing effects of alloying and epitaxy in thin films has been a long-standing issue.

136 Remote epitaxy, in which an epitaxial relation is established b

137 ict requirement is relaxed for van der Waals epitaxy, in which epitaxy on layered or two-dimensional

138 Hydrothermal epitaxy, in which single crystal thin films are directly

139 in undoped GaN grown by hydride vapor phase epitaxy increases linearly with the concentration of rel

140 CE (geometric real-space analysis of crystal epitaxy) indicates that this interfacial configuration a

141 on, are modest and governed by the change in epitaxy-induced compressive strain.

142 The concept of remote epitaxy involves a two-dimensional van der Waals layer c

143 Remote epitaxy is a promising approach for synthesizing exfolia

144 Epitaxy is a widely used method to grow high-quality cry

145 Strained epitaxy is also shown to have a substantial stabilizatio

146 unidentified nanorod-assisted van der Waals epitaxy is developed and nearly single-crystalline GaN f

147 The epitaxy is mainly driven by an electronic polarization s

148 microscopy, we visually confirm that remote epitaxy is operative at the atomic scale.

149 and conducting substrates via molecular beam epitaxy is presented.

150 n inert SiO(2) dielectrics by molecular beam epitaxy is reported.

151 (x) Te-Pb heterostructures by molecular beam epitaxy is reported.

152 We postulate that such long-range epitaxy is solvent-assisted, and that it originates from

153 core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy

154 Epitaxy is widely employed to create highly oriented cry

155 tructural tunability via substrate-dependent epitaxy is yet to be proven.

156 is accomplished by manipulating various vdW epitaxy kinetic factors, which allows the choice bet wee

157 hree-dimensional analog of oxide solid-phase epitaxy, lateral epitaxial crystallization.

158 Deposition using atomic sputtering epitaxy leads to the coherent merging of trillions of is

159 DMHD was evaporated, and the epitaxy-like process induced an ultrafinely distributed,

160 f nickel ferrite (NFO) grown by liquid phase epitaxy (LPE).

161 In this work, a combination of thin-film epitaxy, macro- and nanoscale property and switching cha

162 ayer substrates fabricated by molecular beam epitaxy made it possible to use x-ray interferometry to

163 ured MCT chips fabricated via molecular beam epitaxy (MBE) as waveguide enabling sensing via evanesce

164 We use molecular beam epitaxy (MBE) for the controlled growth of high quality

165 uctor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications.

166 o types of samples, which are molecular beam epitaxy (MBE) grown NiO(001) film on Mg(001) substrate a

167 er thickness variation during molecular beam epitaxy (MBE) growth on transport characteristics of ter

168 atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sa

169 owth of ZnSnxGe1-xN2 films by molecular-beam epitaxy (MBE) on c-plane sapphire and GaN templates is d

170 xial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area, cost-effective N-polar AlN

171 Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures that host e

172 ayer-by-layer deposition with molecular beam epitaxy (MBE) to systematically construct the oxide-sili

173 Using molecular-beam epitaxy (MBE), a series of single crystal Mn(x) Fe(3-) (

174 2) thin film was deposited by molecular beam epitaxy (MBE), and Au was implanted into the as-grown fi

175 Using hybrid molecular beam epitaxy (MBE), SrTiO(3) films with a low-temperature mob

176 or state has been observed in molecular beam epitaxy (MBE)-grown magnetically doped TI sandwiches and

177 erial, on bilayer graphene by molecular beam epitaxy (MBE).

178 c) ~ 79 K) synthesized by the molecular beam epitaxy (MBE).

179 a p-type Si(111) substrate by molecular beam epitaxy (MBE).

180 ) SnO single-crystal films by molecular-beam epitaxy (MBE).

181 strates using low-temperature molecular beam epitaxy (MBE).

182 oated substrates via remote or van der Waals epitaxy, mechanical release and stacking of LEDs, follow

183 e-terminated GaSb (001) via a seeded lateral epitaxy mechanism, in which pinhole defects in the graph

184 ombination of these factors suggests a "soft epitaxy" mechanism of binding.

185 le from other two-dimensional material-based epitaxy mechanisms.

186 r deposition (CVD)-based van der Waals (vdW) epitaxy method to grow 2D metal (Cd) electrodes, elimina

187 focuses on InAs/InP QDs created via droplet epitaxy MOVPE to operate within the telecoms C-band.

188 We show quantitatively that colloidal epitaxy obeys the same two-dimensional island nucleation

189 nstrate this for organo-metallic vapor phase epitaxy of (0001) GaN.

190 interfacial phase formed during pulsed-laser epitaxy of (0001)-oriented CuCrO(2) epitaxial thin films

191 Epitaxy of 1/2 monolayer of GdAlSi results in a film wit

192 w strategies for improving the van der Waals epitaxy of 2D materials.

193 Here, we report liquid-phase van der Waals epitaxy of a 2D RP hybrid perovskite (4,4-DFPD)(2)PbI(4)

194 We demonstrate the remote epitaxy of BaTiO(3) (BTO) on Ge using a graphene interme

195 Our successful epitaxy of both VO2(A) and VO2(B) phases, which are rare

196 Pulsed laser epitaxy of brownmillerite SrCoO2.5 thin films and their

197 erimentally demonstrate long-distance remote epitaxy of CsPbBr(3) film on an NaCl substrate, KCl film

198 facial layer is the critical element for the epitaxy of CuCrO(2) delafossites on Al(2)O(3) substrates

199 ic perovskites, are promising candidates for epitaxy of delafossites.

200 We first demonstrate the single crystal epitaxy of high quality cuprous iodide (CuI) film grown

201 Here we demonstrate direct van der Waals epitaxy of high-quality single-crystalline GaN films on

202 icon(7-12), monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-

203 nsible for the success of the molecular beam epitaxy of III-V semiconductors.

204 The epitaxy of immiscible refractory oxides is, therefore, a

205 epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions

206 oliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch.

207 Reversible electrochemical epitaxy of metals provides a general pathway toward ener

208 sub-monolayer to multilayer coverage and the epitaxy of NCs with anisotropic shape.

209 res, but expands the utility of pulsed laser epitaxy of other materials as well.

210 Conventional epitaxy of semiconductor films requires a compatible sin

211 Here, we report the successful epitaxy of single-domain ferroelectric oxide films on Nb

212 tal orientation can make or break successful epitaxy of such semiconductors.

213 is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposit

214 ismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain s

215 developed for the growth modeling on the vdW epitaxy of TMDs.

216 erature, on the other hand, leads to lateral epitaxy of WS2 on MoS2 edges, creating seamless and atom

217 rties of thin films, grown by molecular beam epitaxy, of the spin-ladder compound [CaCu2O3]4, using t

218 h precursors and promoters, and the need for epitaxy often limit direct growth of 2D materials on the

219 d gold electrodes via organic molecular beam epitaxy (OMBE).

220 ructures, which were grown by molecular beam epitaxy on (001) DyScO3.

221 akes are synthesized via van der Waals (vdW) epitaxy on a polar Si (111) surface.

222 P films are constructed using molecular beam epitaxy on a Pt(111) substrate at low temperatures (<30

223 line thin films were grown by molecular beam epitaxy on Al2O3 (0001), and their structural and chemic

224 2)Se(3) quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy tec

225 ene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuou

226 relaxed for van der Waals epitaxy, in which epitaxy on layered or two-dimensional (2D) materials is

227 Here, we show that epitaxy on Ru(0001) produces arrays of macroscopic singl

228 ds was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates.

229 erimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a buckmi

230 0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier densi

231 s as colloidal crystals through liquid-phase epitaxy or colloidal synthesis.

232 of the same material grown by molecular-beam epitaxy or UHV pulsed-laser deposition.

233 Such excellent structural epitaxy over the entire thickness results in exceptional

234 GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates.

235 Different phenomena observed during vdW epitaxy process are analysed in terms of complex competi

236 By engineering the device structure and epitaxy process, polarization asymmetry is introduced in

237 mismatch, something not yet realized for any epitaxy process.

238 ical simulations of zone annealing and chemo-epitaxy processing of BCP films to achieve long-range or

239 Van der Waals epitaxy provides a fertile playground for the monolithic

240 grown on mica via liquid-phase van der Waals epitaxy provides a paradigm to prepare orderly distribut

241 Boundary-directed epitaxy provides an attractive path towards assembling,

242 We use an all-in situ molecular beam epitaxy reduction process to achieve the superconducting

243 ever, the atomic scale mechanisms for remote epitaxy remain unclear.

244 ngineering of halide perovskites by chemical epitaxy remains a challenge, owing to the absence of sui

245 low density dislocation mechanism in remote epitaxy, respectively.

246 ect to epitaxial heterostructures, where the epitaxy responsible for strong coupling can degrade film

247 wn on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechani

248 NC epitaxy reveals an exceptional strain tolerance.

249 Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed

250 Combining ab initio simulations, thin-film epitaxy, scanning probe microscopy, synchrotron X-ray di

251 Using molecular beam epitaxy, single-crystalline, rhombohedral thin films wit

252 However, we found that in colloidal epitaxy, step-edge and corner barriers that are responsi

253 combination of reactive oxide molecular-beam epitaxy, substitutional diffusion and in-situ angle-reso

254 h, we have developed an oxide molecular beam epitaxy system with in situ synchrotron X-ray scattering

255 re grown in a plasma-assisted molecular beam epitaxy system.

256 es a model system for further exploration in epitaxy systems.

257 h temperature using the laser molecular beam epitaxy technique.

258 epitaxy on GaAs substrates using the droplet epitaxy technique.

259 proved by combining zone annealing and chemo-epitaxy techniques.

260 It is commonly believed that in remote epitaxy, the distance within which the remote interactio

261 Epitaxy-the growth of a crystalline material on a substr

262 We expand the concept of epitaxy to a regime of "twisted epitaxy" with the epilay

263 es microintaglio printing with van der Waals epitaxy to efficiently pattern various single-crystal tw

264 erostructures grown by hybrid molecular beam epitaxy to engineer polarization selectivity of ultrafas

265 Here, we harness epitaxy to extend the stability of the BCC Fe(1-x)Ga(x)

266 d atomic layer-by-layer oxide molecular beam epitaxy to grow epitaxial thin films of [Formula: see te

267 We use heteroepitaxial molecular beam epitaxy to grow FeSe with a nanoscale network of modulat

268 approach of high-temperature molecular beam epitaxy to grow high-quality monolayer boron nitride on

269 Here, we use molecular beam epitaxy to grow intrinsic MnBi(2)Te(4) thin films.

270 We apply molecular beam epitaxy to grow lateral sandwich heterostructures with m

271 hotoemission spectroscopy and molecular beam epitaxy to reveal the electronic structure, charge trans

272 Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfa

273 We used atomic-layer molecular beam epitaxy to synthesize bilayers of a cuprate metal (La(1.

274 In this study, we used molecular beam epitaxy to synthesize heterostructures formed by stackin

275 -situ mechanical mask, we use molecular beam epitaxy to synthesize QAH insulator junctions, in which

276 By adapting the concept of epitaxy to two-dimensional space, we show the growth of

277 aterials on III-N and III-V substrates using epitaxy tools, which enables a scheme comprised of multi

278 Here, combining molecular beam epitaxy, variable temperature scanning tunneling microsc

279 We report on morphology-controlled remote epitaxy via hydrothermal growth of ZnO micro- and nanost

280 on of MoSe2 nanoribbons using molecular beam epitaxy, via an unexpected temperature-induced morpholog

281 High-temperature vapor phase epitaxy (VPE) has been proved ubiquitously powerful in e

282 of ~ 5.0 um at 200 K grown by molecular beam epitaxy was demonstrated.

283 Using ambient liquid-phase epitaxy, we present a new method to grow single-crystal

284 thetic strategy that we term facet-selective epitaxy: we first switch off, and then switch on, shell

285 e show that it is possible to achieve remote epitaxy when the epilayer-substrate distance is as large

286 hin films due to the severe deterioration in epitaxy, which is critical to film properties.

287 ricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to int

288 were grown using Ga-assisted molecular beam epitaxy with a GaTe captive source as the dopant cell.

289 trilayer heterostructures by molecular-beam epitaxy with extreme hole concentrations (n(h) = 4.15 x

290 By combining molecular beam epitaxy with in-situ electron diffraction and photoemiss

291 rs of magnitude faster than state-of-the-art epitaxy with low-cost methods without compromising cryst

292 SnO3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 10(

293 ments, enable large-area quasi van der Waals epitaxy with sharp interfaces without intermediate phase

294 Rather than direct epitaxy with the growth substrate, the spontaneous forma

295 e concept of epitaxy to a regime of "twisted epitaxy" with the epilayer crystal orientation between t

296 hombic SnS on trigonal SnS(2) shows that vdW epitaxy yields azimuthal order even for non-isotypic 2D