ライフサイエンスコーパス: etch

1 mask for subsequent material deposition (or etching).

2 rowth substrate is removed with a XeF2 vapor etch.

3 n be readily formed by a controlled undercut etching.

4 ation through lithographic templating and/or etching.

5 llowed by shallow inductively coupled plasma etching.

6 layer deposition (ALD) assisted sacrificial etching.

7 bstrates generated by anodic electrochemical etching.

8 , to electrochemical reactions and selective etching.

9 s on each chip by gas-phase Xenon difluoride etching.

10 e realised with techniques like reactive ion etching.

11 ynamics by altering the crystal through acid etching.

12 and exposed on the surface through oxidative etching.

13 countercation on the rate of oleate induced etching.

14 arious shapes are patterned via reactive-ion etching.

15 ss as a hard etch mask for deep-reactive ion etching.

16 are fabricated via using lithography and wet etching.

17 s that often include photolithography and/or etching.

18 ores are introduced in GO sheets by chemical etching.

19 with directional and isotropic reactive ion etching.

20 th smear layer, 2) after 37% phosphoric acid etching, 3) after the treatments, and 4) after 6% citric

21 Model self-etch adhesives were formulated with various components,

22 by using phosphoric acid as a size-selective etching agent and a mixture of dimethyl sulfoxide and me

23 PVP can act as a capping and etching agent for protection of the outer surface nanopa

24 nd magnetic gold nanoclusters (MGNCs) as the etching agents is described.

25 is metal site) as both functional sites and etching agents.

26 of extra- and intracellular Ag by chemically etching AgNPs on the surface of algal cells and used dar

27 control of the graphene layers, atomic layer etching (ALE), a cyclic etching method achieved through

28 l hole array made possible by patterning and etching an ALD WO(3) thin film before conversion, second

29 processing technology, such as lithography, etch and deposition techniques.

30 ls were produced using a multilayer-chemical-etch and diffusion-bonding process, and metal nuts were

31 Selected adhesives were allowed to etch and extract HAp from enamel, light-cured in situ, a

32 time, that the use of EDC for both the self-etch and the etch-and-rinse approaches results in the re

33 ion of commercialized 10-MDP-containing self-etch and universal adhesives to human dentin.

34 The results show that the electrochemically etched and boiling-water immersed Al surfaces have excel

35 For XPB, dentin was etched and treated with 0.3 M EDC for 1 min and then bon

36 at CNTYMEs increased 3-fold after O2 plasma etching and 4-fold after antistatic gun treatment.

37 Overall, O2 plasma etching and antistatic gun treatment improve the sensiti

38 be yarn microelectrodes (CNTYMEs): O2 plasma etching and antistatic gun treatment.

39 facile method combined with electrochemical etching and boiling water immersion is developed to fabr

40 reparation of the recording sites using acid etching and electroplating with PEDOT-TFB, and demonstra

41 parison of scratches morphology after static etching and high-frequency ultrasonic agitation etching

42 diffusion-limited behavior are found due to etching and partial dissolution of the initial ZIF-8 cry

43 Etching and patterning diamond to depths beyond one micr

44 wed enhanced dissolution of quartz phases by etching and pitting.

45 The nanorings form during controlled etching and rearrangement of two-dimensional nanoplatele

46 electron-beam lithography (EBL), plasma dry etching and size reduction processes.

47 es, typically photolithography, chemical/dry etching and thermal/anodic bonding.

48 Our approach incorporates gentle etching and/or fracturing of outer oxide-acetate layers

49 quantum dots through cation exchange (ionic etching), and facilitates renal clearance of metal ions

50 iMFP, fabricated using photolithography, wet etching, and polishing, shows comparable performance to

51 rried out via multiple steps of lithography, etching, and transfer.

52 restored with a commercial non-antibacterial etch-and-rinse adhesive (N) or an experimental antibacte

53 brid layer (HL) created by a self-etch or an etch-and-rinse adhesive after 1 y.

54 he use of EDC for both the self-etch and the etch-and-rinse approaches results in the reduction but n

55 The morphology, etching anisotropy and etch depth of the nanoholes were

56 We present herein plasmon-assisted etching as an approach to extend the DIY theme to optics

57 nes of the T. ventricosus were significantly etched at both pHSW-T 7.7 and 7.4 and their fracture for

58 en (SF6/O2) inductively coupled plasma (ICP) etching at cryogenic temperatures and we find it to be s

59 lysis in acidic solution as the solution can etch away Sr atoms.

60 bound ligands; after I(2)/I(-) treatment to etch away the gold cores, ligand density ranges from ~2

61 We also show that CuNPs are not etched by thiol solutions as previously reported, and ad

62 enerate Ox1 , which is capable of initiating etching by injecting holes into the semiconductor valenc

63 Subsequently, plasma etching can be used to fabricate the arched stripe array

64 Simulated etching confirms that etching can be viewed as reversed growth.

65 Compared to pristine CC, the plasma-etched carbon cloth (P-CC) has a higher specific surface

66 Zn oleate is shown to etch CdS nanorods anisotropically, where the length decr

67 n few-layered PdSe(2) and leads to 1D sub-nm etched channels in Pd(2) Se(3) bilayers.

68 This study reports a novel "safe enamel etch" clinically viable procedure that was accomplished

69 ow unprecedented selectivity when exposed to etching conditions involving plasmas.

70 Simulated etching confirms that etching can be viewed as reversed

71 spect ratios without introducing ion-related etch damage.

72 top surface of the diamond channel from dry etch damage.

73 immobilized AAMPs as compared with the total etched dentin at the dentin surface and extended deeply

74 hin completely demineralized phosphoric acid-etched dentin, with values derived from dry bonding sign

75 emiconductor junction is used for activating etch, deposition, and modification steps localized to th

76 The morphology, etching anisotropy and etch depth of the nanoholes were investigated by scannin

77 with the optimization of the grating coupler etching depth.

78 ared emissivity equivalent to a conventional etched design.

79 e use of carrier wafers in Deep Reactive Ion Etching (DRIE).

80 tructures can also result due to the initial etching effect of metal oleates.

81 On the other hand, the etching effect of plasma can simultaneously and effectiv

82 nces were not evident, but quick-freeze deep-etch electron microscopy provided insight into Bathycocc

83 ing the growth of enamel-like crystals on an etched enamel surface.

84 i inhibition was reversed by the presence of etched enamel surfaces and led to the formation of large

85 Acid-etched enamel surfaces of extracted human molars, cut pe

86 divided into 5 groups: HF (hydrofluoric acid-etching), Er:YAG laser + HF, Graphite + Er:YAG laser + H

87 Here we combine isothermal growth and etching experiments with in situ scanning electron micro

88 it destabilizes in a second growth stage, by etching faster in the (111) direction, leading to arms i

89 1961, the development of an improved freeze-etching (FE) procedure to prepare rapidly frozen biologi

90 h dislocation-selective electrochemical deep etching followed by thermal annealing, which creates nan

91 assisted with endoscope evaluation, and acid etching, followed by EMD or saline application.

92 rocess, up to 23.38 nm/RIU at the end of the etching, for a RI range from 1.3418 to 1.4419 RIU.

93 ng stacked metal sheets followed by chemical etching, free-standing 2D metal (e.g., Ag, Au, Fe, Cu, a

94 s caused profound proteinuria, and with deep-etching freeze-fracture electron microscopy, we resolved

95 Separated peptides were ionized using an etched fused-silica emitter capable of stable operation

96 ctive and reproducible SERS substrate (photo-etched GaN covered with a thin layer of sputtered gold)

97 After 6 months, grit-blasted acid-etched (GBAE) PS implants with and without a MACH neck w

98 tion of the volumes of the micro wells in HF-etched glass and laser-ablated PDMS.

99 urprisingly, the co-assembly of pristine and etched GO sheets yields even stiffer films than those ma

100 rocesses containing laser patterning and wet etching have demonstrated the advantages of easily tunin

101 econdary caries resistance potential of acid-etched human coronal dentin bonded using augmented press

102 d by inductively coupled plasma-reactive ion etching (ICP-RIE) technique to produce amino-functionali

103 gold nanostructures as they are oxidatively etched in a graphene liquid cell with a controlled redox

104 rom silicon p-n junction specimens that were etched in ammonium fluoride solution.

105 ensions, and the concentric dielectric rings etched in the ground-plane act as shunt left-handed indu

106 Concentric dielectric-rings are etched in the ground-plane under the radiation patches i

107 de (h-BN) basal plane surfaces via oxidative etching in air using silver nanoparticles as catalysts.

108 O2 plasma etching increased the sensitivity due to increased surfa

109 ate, whereas oleic acid alone does not cause etching, indicating the importance of the countercation

110 are optically excited in rectangular pillars etched into a semi-insulating silicon carbide substrate.

111 Recently, high-pressure microfluidic devices etched into glass and exploiting crude oil's natural flu

112 Photonic crystals are etched into single mode low refractive index SiON film o

113 They are positioned over a cavity, etched into the Si substrate, that provides thermal isol

114 diation through the array with small notches etched into their sides that act as scatterers.

115 acial polymerization, a facile oxygen-plasma etch is used to create size-selective pores (</=1 nm) in

116 Electrochemical etching is used to slice off single-crystalline AlGaN/Ga

117 In contrast to plasma etching, it allows, for example, the creation of enclose

118 Quantitative analysis of etching kinetics using in situ transmission electron mic

119 A methodological approach, based on bulk etch length, is proposed to uniquely characterize the pa

120 progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-qualit

121 er was fabricated by metal-assisted chemical etching (MACE) procedure.

122 o a semiconductor by metal-assisted chemical etch (MacEtch), demonstrate enhanced transmission when c

123 cesses governing the metal-assisted chemical etching (MacEtch) of silicon (Si).

124 available within the CMOS process as a hard etch mask for deep-reactive ion etching.

125 nalised polyvinylidene fluoride (PVDF) track-etched membranes, PB2MP-g-PVDF, was investigated.

126 t processing steps including localized oxide etch, metal deposition, and process termination.

127 layers, atomic layer etching (ALE), a cyclic etching method achieved through chemical adsorption and

128 present a polymer- and transfer-free direct-etching method for batch fabrication of robust ultraclea

129 nosheets can be improved if we adopt an acid etching method on LCO to create more active edge sites,

130 btained by a facile one-step electrochemical etching method without any extra processing steps.

131 e fabricated using a metal-assisted chemical etching method.

132 eaching and buffered hydrofluoric acid (BHF) etching methods.

133 Etched microchannels were used to create highly collimat

134 Each adhesive was applied in the self-etch mode on midcoronal dentin according to the respecti

135 Helium plasma etched MoS2 layers for edge contacts.

136 ic nanopores, model peptide nanopores, track-etched nanopores in polymer membranes, and hydroxylated

137 t addition of Se precursors to the partially etched nanorods in Zn oleate solution can lead to epitax

138 ed ultra-high vacuum (UHV) cell with silicon etched NEG cavities and alumino-silicate glass (ASG) win

139 We find that oxidative etching of [Au(25)SR(18)](-) nanoclusters adds an excess

140 ining technology utilizing deep reactive ion etching of a silicon-on-insulator wafer and bonded to a

141 d iodide enable the site-selective oxidative etching of Au(0), which leads to nonuniform growths alon

142 n effects of pyrophosphate (PPi) against the etching of AuNPLs based on Cu(2+) and I(-) mediated is d

143 ian blue-type thin films, formed by chemical etching of Co(OH)1.0(CO3)0.5.nH2O nanocrystals, yield a

144 ntraperitoneal tumor targeting and selective etching of excess untargeted quantum dots.

145 l etching results with the ex situ oxidative etching of gold nanocrystals using FeCl(3) provides furt

146 ly considered the role of oxygen in thiolate etching of gold.

147 We review the selective etching of graphene to form edges and nanopores, which h

148 noporous silicon produced by electrochemical etching of highly B-doped p-type silicon wafers can be p

149 l phase reconstruction during OER due to the etching of lattice anion is demonstrated.

150 ional theory calculations discloses that the etching of lattice Cl(-) serves as the key to trigger th

151 Unexpected etching of nanocrystals, nanorods, and their heterostruc

152 cks ruggedness inasmuch as the generation or etching of NP is greatly dependent on every experimental

153 d after 500 cycles, which is ascribed to the etching of P into solution, as well as the oxidation of

154 y confined to chemical and irradiation-based etching of preformed nanostructures.

155 Anisotropic wet etching of sapphire through micro-patterned triangular m

156 con nanoparticles (NPs), obtained via anodic etching of Si wafers, as a basis for undecylenic acid (U

157 diode-pumped alkali laser and remote plasma etching of Si3N4 as examples, we demonstrate how accurat

158 rising single atomic gold-catalyzed chemical etching of silicon.

159 zzle-based electrodeposition, and subsequent etching of the blanket film is demonstrated to print pur

160 ring signatures with increased gain upon the etching of the fiber 1-2 mm away from the tip.

161 ed to the mode transition region by chemical etching of the outer fiber cladding, obtaining a signifi

162 At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from t

163 WO3 precursor and protects against oxidative etching of the synthesized monolayers.

164 eans of a minimally destructive surface acid etching of tooth enamel and subsequent identification of

165 sea urchins (euechinoids), but the impact of etching on skeleton mechanical properties is almost unkn

166 thin the hybrid layer (HL) created by a self-etch or an etch-and-rinse adhesive after 1 y.

167 y attributed to the electrocatalysis-induced etching or dissolution of Pt nanoparticles.

168 ted by adding materials without the need for etching or dissolution, processing is environmentally fr

169 h when compared with that of phosphoric acid etching ( P > 0.05).

170 ing electron microscopy for a broad range of etching parameters, including the temperature, the press

171 rates to different analytes depending on the etching parameters.

172 tivity of the biosensor by 3.7 times for the etched part of the fiber with diameter 8-9 mum.

173 ndwiching two nanoporous polycarbonate track etched (PCTE) membranes with differently sized nanopores

174 escribe the integration of a polyester track-etched (PETE) nanofluidic interface to physically confin

175 index surfaces close to the (100) plane, the etch pit destabilizes in a second growth stage, by etchi

176 F plot compellingly connects the macroscopic etch pit hexagonal profile to the crystallographic hexag

177 ample was used to capture both a macroscopic etch pit image and an electron backscatter diffraction (

178 Direct comparison of the etch pit image and the ODF plot compellingly connects th

179 ich we interpret as the onset of homogeneous etch pit nucleation.

180 the (111) direction, leading to arms in the etch pit, yielding a concave octagon-shaped pit.

181 We hypothesize that these etch pits are formed through a ternary metal hydride cor

182 Initially, corrosion etch pits are formed, which reflect the local symmetry o

183 configured fluorophores were deposited into etched pits on the distal end of a 150 um diameter multi

184 Migration through custom-etched pores yields the same damage threshold, with ~4-u

185 Recently, we evolved tobacco etch potyvirus (TEV) lineages on different ecotypes of A

186 mutations fixed during adaptation of tobacco etch potyvirus (TEV) to a new experimental host, Arabido

187 For CSE, the self-etching primer was applied and treated with 0.3 M EDC fo

188 were prepared via an anodic electrochemical etching procedure, resulting in pSi particles with diame

189 The etching proceeding of AuNPLs by copper ions and iodide i

190 length ~5 um were fabricated using a plasma etching process and then coated with a conformal uniform

191 mploys chronoamperometric pulsing in a 5 min etching process easily compatible with batch manufacturi

192 o copper ions, the presence of PPi makes the etching process greatly suppressed, thereby achieving se

193 The dry-etching process is applicable to a wide variety of subst

194 Though, the sensitivity of the dry etching process is lower than the traditional "wet" elec

195 to elucidate if HAp released from the dental etching process is sufficient to trigger it.

196 matic study varying parameters in the plasma etching process was performed to understand the relation

197 Interestingly, we demonstrate that the etching process which is time- and acidity- dependent, c

198 le in obtaining a highly anisotropic thermal etching process with the formation of hexagonal non-pola

199 r than the traditional "wet" electrochemical etching process, it is suitable for many applications an

200 m-thick crystalline silicon chip by chemical etching process, which produced a flexible silicon chip.

201 Ap released from dental substrate during the etching process.

202 thin film vacuum deposition and reactive-ion etching processes eliminating complicated processes of d

203 Control over the deposition and etching processes is demonstrated by several parameters:

204 lithography technique and subsequent dry/wet etching processes.

205 Subsequent selective etching produces monoliths with morphologies that can be

206 latively hydrophilic surface after O2 plasma etching provided better resistance to fouling than unmod

207 ophosphate (ionic liquid/IL) packed into the etched Pt UME.

208 Subsequent etching quenches excess quantum dots, leaving a highly t

209 r thicker films, we show a saturation in the etch rate demonstrating a transport process that is domi

210 ed surface roughness of 0.47 nm at a diamond etch rate of 45 nm/min and 16.9:1 selectivity.

211 Sodium oleate enhances the etch rate, whereas oleic acid alone does not cause etchi

212 uniformity of the nanohole diameter, and the etch rate, which reaches 6 um per hour.

213 ative species, independently determining the etching rate and chemical potential of the reaction, res

214 electron beam dose rate leads to a constant etching rate that varies linearly with the electron beam

215 m fluoropolymers to borosilicate glass, with etch rates in excess of 1 microm s(-1) .

216 The observed layer-dependent etching rates reveal the relative strength of the graphe

217 Regenerative electroless etching (ReEtching), described herein for the first time

218 to nanostructured magnetic ceramics, and as etch resists to plasmas and other radiation.

219 cal characterization illustrated that plasma etching resulted in some physical changes on starch gran

220 Correlating these liquid cell etching results with the ex situ oxidative etching of go

221 Selective area thermal etching (SATE) of gallium nitride is a simple subtractiv

222 Acid-etched scanning electron microscopy (SEM) images of AIS

223 improve their bondability, allowing for the etching/silane adhesive bonding technique.

224 y, we show that intracellular pH is lower at etching sites compared to ambient seawater and the spong

225 New sandblasted, large grit, acid etched (SLA) coated implants were subjected to ultrasoni

226 , and ZrO(2) implants with sandblasted, acid-etched (SLA) surfaces in addition to modified SLA-treate

227 biofilm was disrupted from sandblasted, acid etched (SLA) Ti discs and polished Ti discs.

228 Sandblasted, large grit, acid-etched (SLA) titanium disks were inoculated with subging

229 including: 1) sandblasted, large-grit, acid-etched (SLA); 2) calcium phosphate nano-coated (CaP); 3)

230 It is shown that with careful etching, sputtered Nb films can make high-quality and tr

231 ronmentally friendly and eliminates the acid etch steps common to conventional sapphire preparation,

232 e of the metasurface is enabled via chemical etching steps to manage nanoperiodicity of the plastic t

233 substrates typically involve one or more wet-etching steps.

234 stability of the chip and a patterned SiO(2) etch-stop layer to replace the use of carrier wafers in

235 Here we report an ammonia-assisted hot water etching strategy for the generic synthesis of a library

236 nvestigate a region close to the edges of an etched structure.

237 DPC imaging of an FeRh sample with HF-etched substrate reveals a state of AF/FM co-existence a

238 ame high-quality as the samples grown on BHF-etched substrates.

239 e substrates to flexible polycarbonate track etched supports with well-defined cylindrical approximat

240 apor deposition (CVD) to polycarbonate track-etched supports.

241 d to, 10.6 mum were produced with an average etched surface roughness of 0.47 nm at a diamond etch ra

242 Examination of the fractured faces and etched surfaces provided strong evidence that biological

243 of small needle-like HA crystals, formed on etched surfaces that were cut perpendicular to the ename

244 oped with the use of a sacrificial aluminium etching technique combined with surface modifications by

245 ecent research into thin-film deposition and etching techniques for mid-infrared materials shows pote

246 obstacles, as conventional lithographic and etching techniques may affect the surface chemistry of c

247 etween 500 and 650 degrees C PbO in the frit etches the SiNx antireflective-coating on the solar cell

248 -plane chemical ordering, and by selectively etching the Al and Sc atoms, we show evidence for 2D Mo1

249 Thereafter etching the gold electrode significantly contributed to

250 Even at optimized experimental conditions, etching the gold electrodes could not be completely supp

251 The final products, after etching the PS, generated a highly ordered Au-nanohole a

252 single-crystalline membranes are produced by etching the Sr 3Al 2O 6 layer in water, providing the op

253 d lithography and inductively coupled plasma etching, the Si substrate was prepared with very high pa

254 ane was microfabricated by deep reactive ion etching through a porous aluminum oxide layer.

255 Acid-etched Ti discs were inoculated with human peri-implant

256 al pretreatment (Sr enrichment) and chemical etching (Ti enrichment).

257 An aptasensor based on etched tilted fiber Bragg grating (eTFBG) is developed o

258 demonstrated that Si NWs/MPs with 20 min of etch time had the best capturing performance.

259 the degree of phase coherence by varying the etching time of our films.

260 surfaces was found to increase linearly with etching time where the pore size ranged from 4 to 12 nm

261 ectrospray was achieved through a chemically etched tip from a long (e.g., 50 cm) capillary with a co

262 Grit-blasted acid-etched titanium disks were contaminated with multispecie

263 ing polymethyl methacrylate (PMMA) and a wet etch to allow the user to transfer the flakes to a final

264 was treated with a short CHF(3) reactive ion etch to ensure consistent hydrophobic photoresist: water

265 Optionally, these parts are chemically etched to produce desired 3D shapes.

266 inner lumen of halloysite may be adjusted by etching to 20-30% of the tube volume and loading with fu

267 res using 'short' or 'extended' reactive ion etching to produce 30-60 nm (diameter) nanodots or 100-2

268 lf-assembled nanospheres, followed by custom-etching to produce nanometre size features on large-area

269 ntinuous precipitation followed by selective etching to remove one of the phases.

270 proach involves the use of oxygen plasma dry etching to thin down thick-exfoliated phosphorene flakes

271 In this work, the etching trajectories of nanocrystals were used as a prob

272 A unique 3-dimensional etched-trench-channel configuration was used to allow fo

273 A cavity etched under the antenna provides two benefits.

274 We choose Rh because it can resist oxidative etching under the harsh conditions for Ru overgrowth, it

275 ar, PL analysis supplemented by reactive ion etching up to the depth of 400 nm indicates that the con

276 TFBGs were chemically etched using hydrofluoric acid (HF) to partially remove

277 The metal NNs are monolithically etched using nanoscale shadow masks, and they exhibit ex

278 o 15 sccm in a NiO(x) membrane on chemically etched vertical Si nanowires (SiNWs) in an electrolyte-i

279 Tobacco etch virus protease (TEV) is one of the most widely used

280 Spy-C mice express a TEVp (tobacco etch virus protease) cleavage site and a SpyTag (st) bet

281 tem based on a light-inducible split tobacco etch virus protease.

282 the exogenous enzymatic activity of Tobacco Etch Virus Protease.

283 hing and high-frequency ultrasonic agitation etching was devoted in our case.

284 O2 plasma etching was performed by a microwave plasma system with

285 By chemical etching, we also can image the structural fingerprint fo

286 During etching, when ice is allowed to sublime after fracturing

287 traditional resist-based lithography and dry etch where polymeric byproduct layers are often formed a

288 ed on hydrofluoric acid (HF) electrochemical etching which is undesirable given the significant safet

289 nsport, and also solution ions and thin film etching, which can form the foundation of future studies

290 ct formation, mostly via post-synthetic acid etching, which has been studied extensively on water-sta

291 Although enamel etched with clinically used PA gel yielded higher SBS th

292 The microfluidic device is composed of glass etched with readily fabricated features that facilitate

293 non-scratched fused silica surfaces after HF etching with high-frequency ultrasonic agitation were al

294 re mitigated by mineral acid leaching and HF etching with multi-frequency ultrasonic agitation, respe

295 The method, based on etching with NH4F, is also applicable to other cage-cont

296 se-based rayon microfibers through selective etching with oxygen plasma, forming a nanoscale open-por

297 face of a fused silica capillary prepared by etching with supercritical water.

298 stencil mask and oxygen plasma reactive-ion etching, with a subsequent polymer-free direct transfer

299 lectrochemical strain microscopy and sputter-etched X-ray photoelectron spectroscopy.

300 machined (M) or a sandblasted (SLA) and acid-etched (ZLA) surface topography were produced.