ライフサイエンスコーパス: etching

1 mask for subsequent material deposition (or etching).

2 e realised with techniques like reactive ion etching.

3 ynamics by altering the crystal through acid etching.

4 and exposed on the surface through oxidative etching.

5 countercation on the rate of oleate induced etching.

6 arious shapes are patterned via reactive-ion etching.

7 ss as a hard etch mask for deep-reactive ion etching.

8 owth, (3) templated growth, and (4) chemical etching.

9 d with platinum-salt infiltration and plasma etching.

10 are fabricated via using lithography and wet etching.

11 as localised electron beam induced chemical etching.

12 tionality controlled metal-assisted chemical etching.

13 hrinkage of molecule in turn leading to core etching.

14 , atomic layer deposition, and oxygen plasma etching.

15 pproach, dry-etching and subsequent chemical etching.

16 aphy, thin film deposition, and reactive ion etching.

17 concentrations without aggregation or silver etching.

18 -dimensional nanomaterials capable of plasma etching.

19 emplate upon Au metallization and subsequent etching.

20 to the mechanism of metal-catalyzed chemical etching.

21 the surface area 20 times higher than before etching.

22 r in electrolyte solution by electrochemical etching.

23 aphy, thin-film deposition, and reactive ion etching.

24 s that often include photolithography and/or etching.

25 ores are introduced in GO sheets by chemical etching.

26 with directional and isotropic reactive ion etching.

27 llowed by shallow inductively coupled plasma etching.

28 n be readily formed by a controlled undercut etching.

29 ation through lithographic templating and/or etching.

30 layer deposition (ALD) assisted sacrificial etching.

31 bstrates generated by anodic electrochemical etching.

32 , to electrochemical reactions and selective etching.

33 s on each chip by gas-phase Xenon difluoride etching.

34 re discussed in detail include (1) templated etching, (2) selective dealloying, (3) anisotropic disso

35 th smear layer, 2) after 37% phosphoric acid etching, 3) after the treatments, and 4) after 6% citric

36 the Au25 nanoclusters, exhibiting the potent etching activity.

37 by using phosphoric acid as a size-selective etching agent and a mixture of dimethyl sulfoxide and me

38 PVP can act as a capping and etching agent for protection of the outer surface nanopa

39 nd magnetic gold nanoclusters (MGNCs) as the etching agents is described.

40 is metal site) as both functional sites and etching agents.

41 of extra- and intracellular Ag by chemically etching AgNPs on the surface of algal cells and used dar

42 control of the graphene layers, atomic layer etching (ALE), a cyclic etching method achieved through

43 a member of the 'MXene' family), produced by etching aluminium from titanium aluminium carbide (Ti3Al

44 l hole array made possible by patterning and etching an ALD WO(3) thin film before conversion, second

45 at CNTYMEs increased 3-fold after O2 plasma etching and 4-fold after antistatic gun treatment.

46 ich was prepared by Ag-assisted wet chemical etching and a photo-lithography process.

47 Overall, O2 plasma etching and antistatic gun treatment improve the sensiti

48 be yarn microelectrodes (CNTYMEs): O2 plasma etching and antistatic gun treatment.

49 Through sequential block etching and backfilling the resulting mesopores with dif

50 facile method combined with electrochemical etching and boiling water immersion is developed to fabr

51 his positive result, the simultaneous dentin etching and collagen protecting of GSE-containing phosph

52 reparation of the recording sites using acid etching and electroplating with PEDOT-TFB, and demonstra

53 The gold tips were fabricated by chemical etching and further encapsulated with carbon nanocones v

54 The conditions employed in the etching and growth processes also offer valuable insight

55 parison of scratches morphology after static etching and high-frequency ultrasonic agitation etching

56 es the entire Cu(2-x)Se core, accompanied by etching and partial collapse of the shell, yielding Cu(2

57 diffusion-limited behavior are found due to etching and partial dissolution of the initial ZIF-8 cry

58 Etching and patterning diamond to depths beyond one micr

59 wed enhanced dissolution of quartz phases by etching and pitting.

60 The nanorings form during controlled etching and rearrangement of two-dimensional nanoplatele

61 We could control the ratio of the etching and regrowth rates (R(etching) and R(regrowth))

62 lies on a transformation involving oxidative etching and regrowth.

63 anocrystals simply by adjusting the rates of etching and regrowth.

64 electron-beam lithography (EBL), plasma dry etching and size reduction processes.

65 s well as analyze the pillar sidewalls after etching and stationary phase functionalization.

66 -effective silica micro-sphere approach, dry-etching and subsequent chemical etching.

67 es, typically photolithography, chemical/dry etching and thermal/anodic bonding.

68 Our approach incorporates gentle etching and/or fracturing of outer oxide-acetate layers

69 e ratio of the etching and regrowth rates (R(etching) and R(regrowth)) simply by varying the amount o

70 quantum dots through cation exchange (ionic etching), and facilitates renal clearance of metal ions

71 iMFP, fabricated using photolithography, wet etching, and polishing, shows comparable performance to

72 ty against salt-induced aggregation, oxidant etching, and repetitive freeze/thaw treatment-because of

73 re removed from the corners during oxidative etching, and the resultant Pd(2+) ions could be reduced

74 rried out via multiple steps of lithography, etching, and transfer.

75 The morphology, etching anisotropy and etch depth of the nanoholes were

76 probes were realized by a two-step selective etching approach that reduces the diameter of the nanotu

77 In this case, R(etching) approximately R(regrowth), and the resultant Pd

78 We present herein plasmon-assisted etching as an approach to extend the DIY theme to optics

79 ng SiNW prepared via metal-assisted chemical etching as anode material.

80 en (SF6/O2) inductively coupled plasma (ICP) etching at cryogenic temperatures and we find it to be s

81 by carbonization of the latter, followed by etching away the mesoporous silica template from it.

82 nocrystals with well-defined facets and then etching away the Pd templates.

83 , with neither sacrificial template nor core etching, because of geometrical frustration.

84 enerate Ox1 , which is capable of initiating etching by injecting holes into the semiconductor valenc

85 and Ti2GeC, suggesting that electrochemical etching can be a powerful method to selectively extract

86 Subsequently, plasma etching can be used to fabricate the arched stripe array

87 Simulated etching confirms that etching can be viewed as reversed growth.

88 ow unprecedented selectivity when exposed to etching conditions involving plasmas.

89 Simulated etching confirms that etching can be viewed as reversed

90 on Arrays are fabricated over large areas by etching CVD-grown graphene.

91 curable fluid resin infiltrant (without acid etching)-deep into the normal enamel layer.

92 with the optimization of the grating coupler etching depth.

93 new analytical system based on Thermochromic Etching Discs (TED) technology is presented.

94 With a large amount of HCl, etching dominated the process (R(etching) >> R(regrowth)

95 e use of carrier wafers in Deep Reactive Ion Etching (DRIE).

96 tructures can also result due to the initial etching effect of metal oleates.

97 On the other hand, the etching effect of plasma can simultaneously and effectiv

98 EDTA root surface etching enhances DOX availability in the GCF following i

99 divided into 5 groups: HF (hydrofluoric acid-etching), Er:YAG laser + HF, Graphite + Er:YAG laser + H

100 Here we combine isothermal growth and etching experiments with in situ scanning electron micro

101 it destabilizes in a second growth stage, by etching faster in the (111) direction, leading to arms i

102 1961, the development of an improved freeze-etching (FE) procedure to prepare rapidly frozen biologi

103 h dislocation-selective electrochemical deep etching followed by thermal annealing, which creates nan

104 assisted with endoscope evaluation, and acid etching, followed by EMD or saline application.

105 It required only lithography and dry etching for the pore definition and membrane release and

106 rocess, up to 23.38 nm/RIU at the end of the etching, for a RI range from 1.3418 to 1.4419 RIU.

107 ng stacked metal sheets followed by chemical etching, free-standing 2D metal (e.g., Ag, Au, Fe, Cu, a

108 s caused profound proteinuria, and with deep-etching freeze-fracture electron microscopy, we resolved

109 Mechanistically, the process of etching gold with excess thiol is unclear.

110 unt of HCl, etching dominated the process (R(etching) >> R(regrowth)), resulting in the formation of

111 rocesses containing laser patterning and wet etching have demonstrated the advantages of easily tunin

112 Without any applied electric field and post etching, hollow nanostructures can be directly fabricate

113 d by inductively coupled plasma-reactive ion etching (ICP-RIE) technique to produce amino-functionali

114 nanostructures in solar cells without direct etching in a light absorbing semiconductor?

115 de (h-BN) basal plane surfaces via oxidative etching in air using silver nanoparticles as catalysts.

116 only advances our understanding of oxidative etching in nanocrystal synthesis but also offers a power

117 O2 plasma etching increased the sensitivity due to increased surfa

118 ate, whereas oleic acid alone does not cause etching, indicating the importance of the countercation

119 The sensing mechanism is based on CSH etching-induced fluorescence quenching of the bovine ser

120 The silver nanoparticle (AgNP) etching is based on the sensitivity of Ag to a hexacyano

121 ith the silicon substrate suggested that the etching is highly dependent upon the facet surface energ

122 ctional theory calculations suggest that the etching is initiated via a mechanism that involves the f

123 Electrochemical etching is used to slice off single-crystalline AlGaN/Ga

124 mbination with anisotropic deep reactive ion etching, is used to produce uniform high aspect ratio si

125 In contrast to plasma etching, it allows, for example, the creation of enclose

126 Quantitative analysis of etching kinetics using in situ transmission electron mic

127 Plasma etching, lift-off, and ion implantation are realized wit

128 progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-qualit

129 er was fabricated by metal-assisted chemical etching (MACE) procedure.

130 cesses governing the metal-assisted chemical etching (MacEtch) of silicon (Si).

131 cted into the use of metal-assisted chemical etching (MacEtch) to fabricate vertical Si microwire arr

132 layers, atomic layer etching (ALE), a cyclic etching method achieved through chemical adsorption and

133 present a polymer- and transfer-free direct-etching method for batch fabrication of robust ultraclea

134 nosheets can be improved if we adopt an acid etching method on LCO to create more active edge sites,

135 btained by a facile one-step electrochemical etching method without any extra processing steps.

136 e fabricated using a metal-assisted chemical etching method.

137 eaching and buffered hydrofluoric acid (BHF) etching methods.

138 mpact size, fabricated using an improved wet-etching micro-fabrication process with a higher qualifie

139 n the channel walls using micro reactive ion etching (micro-RIE).

140 suffer from high mass loss because of their etching nature.

141 We find that oxidative etching of [Au(25)SR(18)](-) nanoclusters adds an excess

142 ining technology utilizing deep reactive ion etching of a silicon-on-insulator wafer and bonded to a

143 d iodide enable the site-selective oxidative etching of Au(0), which leads to nonuniform growths alon

144 n effects of pyrophosphate (PPi) against the etching of AuNPLs based on Cu(2+) and I(-) mediated is d

145 environment were prepared by electrochemical etching of carbon fibers and subsequent coating with ele

146 ian blue-type thin films, formed by chemical etching of Co(OH)1.0(CO3)0.5.nH2O nanocrystals, yield a

147 bons using Fe nanoparticle-assisted hydrogen etching of epitaxial graphene/SiC(0001) in ultrahigh vac

148 ntraperitoneal tumor targeting and selective etching of excess untargeted quantum dots.

149 iator is a necessary component for efficient etching of gold by thiolates.

150 l etching results with the ex situ oxidative etching of gold nanocrystals using FeCl(3) provides furt

151 Etching of gold with an excess of thiol ligand is used i

152 ly considered the role of oxygen in thiolate etching of gold.

153 We review the selective etching of graphene to form edges and nanopores, which h

154 noporous silicon produced by electrochemical etching of highly B-doped p-type silicon wafers can be p

155 specific (edge and vertex) deposition of Pt, etching of inner Au, and regrowth of Au on the Pt framew

156 l phase reconstruction during OER due to the etching of lattice anion is demonstrated.

157 ional theory calculations discloses that the etching of lattice Cl(-) serves as the key to trigger th

158 Unexpected etching of nanocrystals, nanorods, and their heterostruc

159 cks ruggedness inasmuch as the generation or etching of NP is greatly dependent on every experimental

160 d after 500 cycles, which is ascribed to the etching of P into solution, as well as the oxidation of

161 tion of oxidant (X > 7.7) leads to oxidative etching of precursor colloids into significantly smaller

162 y confined to chemical and irradiation-based etching of preformed nanostructures.

163 Anisotropic wet etching of sapphire through micro-patterned triangular m

164 con nanoparticles (NPs), obtained via anodic etching of Si wafers, as a basis for undecylenic acid (U

165 diode-pumped alkali laser and remote plasma etching of Si3N4 as examples, we demonstrate how accurat

166 dvances in microfluidics involved mainly the etching of silicon and glass, the economics of scaling o

167 eedles fabricated by metal-assisted chemical etching of silicon can access the cytosol to co-deliver

168 Photoelectrochemical etching of silicon can be used to form lateral refractiv

169 rising single atomic gold-catalyzed chemical etching of silicon.

170 n locally enhance the rate of vapor-phase HF etching of SiO2 to produce a SiO2 trench that is several

171 MXenes are produced by selective etching of the A element from the MAX phases, which are

172 zzle-based electrodeposition, and subsequent etching of the blanket film is demonstrated to print pur

173 ment of DOX blended with beta-TCP after EDTA etching of the exposed root surfaces (DOX-beta-TCP + EDT

174 ring signatures with increased gain upon the etching of the fiber 1-2 mm away from the tip.

175 Etching of the MOF with 1 M aqueous HCl followed by 5% H

176 s allows in flight purification by selective etching of the non-diamond carbon and stabilization of t

177 ed to the mode transition region by chemical etching of the outer fiber cladding, obtaining a signifi

178 Indium Tin Oxide (ITO) and rGO layer without etching of the rGO layer.

179 At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from t

180 WO3 precursor and protects against oxidative etching of the synthesized monolayers.

181 eans of a minimally destructive surface acid etching of tooth enamel and subsequent identification of

182 Lateral surface etching of two-dimensional (2D) nanosheets results in ho

183 of a nanoporous gold surface by dealloying (etching) of a 585 gold plate (58.5% Au, 30% Ag, and 11.5

184 sea urchins (euechinoids), but the impact of etching on skeleton mechanical properties is almost unkn

185 ron/ion beam processing, UV exposure, or wet etching on target substrates.

186 y attributed to the electrocatalysis-induced etching or dissolution of Pt nanoparticles.

187 ted by adding materials without the need for etching or dissolution, processing is environmentally fr

188 size augmentations through either oxidative etching or seed-mediated growth of purified, monodispers

189 h when compared with that of phosphoric acid etching ( P > 0.05).

190 Modulation of the etching parameters allowed control of the nano-pore size

191 ing electron microscopy for a broad range of etching parameters, including the temperature, the press

192 rates to different analytes depending on the etching parameters.

193 biophysical effects on the mineral including etching, penetration and formation of new biominerals.

194 For CSE, the self-etching primer was applied and treated with 0.3 M EDC fo

195 The etching procedure provided a single-piece combination of

196 were prepared via an anodic electrochemical etching procedure, resulting in pSi particles with diame

197 The etching proceeding of AuNPLs by copper ions and iodide i

198 length ~5 um were fabricated using a plasma etching process and then coated with a conformal uniform

199 Attenuation of the etching process by radical scavengers in the presence of

200 mploys chronoamperometric pulsing in a 5 min etching process easily compatible with batch manufacturi

201 o copper ions, the presence of PPi makes the etching process greatly suppressed, thereby achieving se

202 The dry-etching process is applicable to a wide variety of subst

203 Though, the sensitivity of the dry etching process is lower than the traditional "wet" elec

204 to elucidate if HAp released from the dental etching process is sufficient to trigger it.

205 ate surface was studied before and after the etching process using different analytical techniques li

206 Conventional wet-etching process was performed to form the nanocone-array

207 matic study varying parameters in the plasma etching process was performed to understand the relation

208 Interestingly, we demonstrate that the etching process which is time- and acidity- dependent, c

209 le in obtaining a highly anisotropic thermal etching process with the formation of hexagonal non-pola

210 2 and SF6 flow rates in the cryogenic plasma etching process, different surface morphologies of the b

211 r than the traditional "wet" electrochemical etching process, it is suitable for many applications an

212 During the deep reactive ion etching process, the sidewalls of a silicon mold feature

213 a graphene monolayer using an oxygen plasma etching process, which allows the size of the pores to b

214 m-thick crystalline silicon chip by chemical etching process, which produced a flexible silicon chip.

215 Ap released from dental substrate during the etching process.

216 sm in which the oxygen radical initiates the etching process.

217 s of fs laser pulse trains followed by a wet etching process.

218 upled with an inductively coupled plasma dry etching process.

219 acids do not interfere with such CSH-induced etching process.

220 es PL quenching of the C-dots@RGO through an etching process.

221 thin film vacuum deposition and reactive-ion etching processes eliminating complicated processes of d

222 Control over the deposition and etching processes is demonstrated by several parameters:

223 lithography technique and subsequent dry/wet etching processes.

224 Subsequent selective etching produces monoliths with morphologies that can be

225 latively hydrophilic surface after O2 plasma etching provided better resistance to fouling than unmod

226 Subsequent etching quenches excess quantum dots, leaving a highly t

227 ative species, independently determining the etching rate and chemical potential of the reaction, res

228 Moreover, a detailed study of the etching rate as a function of the nanoparticle surface f

229 Specifically, the etching rate for Au nanocubes with {100}-terminated face

230 electron beam dose rate leads to a constant etching rate that varies linearly with the electron beam

231 The observed layer-dependent etching rates reveal the relative strength of the graphe

232 Regenerative electroless etching (ReEtching), described herein for the first time

233 off scheme that minimizes the amount of post-etching residues and keeps the surface smooth, leading t

234 cal characterization illustrated that plasma etching resulted in some physical changes on starch gran

235 Correlating these liquid cell etching results with the ex situ oxidative etching of go

236 Reactive ion etching (RIE) of the asymmetric films forms unusual, rou

237 ge-scale integration (VLSI) and reactive ion etching (RIE), as two-dimensional periodic relief gratin

238 ntional optical lithography and reactive ion etching (RIE).

239 Selective area thermal etching (SATE) of gallium nitride is a simple subtractiv

240 Sandblasting and acid etching (SBAE; control) Ti microtopography was coated wi

241 lm organic coatings followed by reactive ion etching serve as highly efficient means for selectively

242 tured using inductively coupled plasma (ICP) etching, serving as photonic waveguides for radiation em

243 improve their bondability, allowing for the etching/silane adhesive bonding technique.

244 y, we show that intracellular pH is lower at etching sites compared to ambient seawater and the spong

245 pproach to fabricate shaped nanoparticles by etching specific positions of atoms on facets of seed na

246 It is shown that with careful etching, sputtered Nb films can make high-quality and tr

247 cts, removing the need for any developing or etching steps but at the same time leading to true 3D de

248 e of the metasurface is enabled via chemical etching steps to manage nanoperiodicity of the plastic t

249 substrates typically involve one or more wet-etching steps.

250 Here we report an ammonia-assisted hot water etching strategy for the generic synthesis of a library

251 oped with the use of a sacrificial aluminium etching technique combined with surface modifications by

252 ecent research into thin-film deposition and etching techniques for mid-infrared materials shows pote

253 obstacles, as conventional lithographic and etching techniques may affect the surface chemistry of c

254 overcome this difficulty by adapting angled-etching techniques, previously developed for realization

255 r nanostructures defined by lithographic and etching techniques.

256 -plane chemical ordering, and by selectively etching the Al and Sc atoms, we show evidence for 2D Mo1

257 nally hollow nanocages in the size ~10 nm by etching the centre of {200} facets.

258 ed magnetization reversal can be achieved by etching the continuous BiFeO3 film into isolated nanoisl

259 Thereafter etching the gold electrode significantly contributed to

260 Even at optimized experimental conditions, etching the gold electrodes could not be completely supp

261 of the bimodal materials can be modified by etching the pore walls with various synthesis solvents f

262 The final products, after etching the PS, generated a highly ordered Au-nanohole a

263 single-crystalline membranes are produced by etching the Sr 3Al 2O 6 layer in water, providing the op

264 n-beam (e-beam) lithography and reactive-ion-etching, the PhC sensing platform allows optical detecti

265 d lithography and inductively coupled plasma etching, the Si substrate was prepared with very high pa

266 with acetic acid as well as electrochemical etching, these FePtM NRs were converted into core/shell

267 bstrate using either Focused Ion Beam or wet etching through a block co-polymer mask.

268 ane was microfabricated by deep reactive ion etching through a porous aluminum oxide layer.

269 al pretreatment (Sr enrichment) and chemical etching (Ti enrichment).

270 the degree of phase coherence by varying the etching time of our films.

271 surfaces was found to increase linearly with etching time where the pore size ranged from 4 to 12 nm

272 was evaluated on the premise of a 30-second etching time.

273 inner lumen of halloysite may be adjusted by etching to 20-30% of the tube volume and loading with fu

274 combining GSE treatment with phosphoric acid etching to address the issue.

275 move the Pd cores through selective chemical etching to generate Rh hollow nanoframes with different

276 res using 'short' or 'extended' reactive ion etching to produce 30-60 nm (diameter) nanodots or 100-2

277 imide substrate using UV lithography and wet etching to produce flexible transparent conducting elect

278 lf-assembled nanospheres, followed by custom-etching to produce nanometre size features on large-area

279 ntinuous precipitation followed by selective etching to remove one of the phases.

280 proach involves the use of oxygen plasma dry etching to thin down thick-exfoliated phosphorene flakes

281 In this work, the etching trajectories of nanocrystals were used as a prob

282 We choose Rh because it can resist oxidative etching under the harsh conditions for Ru overgrowth, it

283 ar, PL analysis supplemented by reactive ion etching up to the depth of 400 nm indicates that the con

284 hing and high-frequency ultrasonic agitation etching was devoted in our case.

285 O2 plasma etching was performed by a microwave plasma system with

286 By chemical etching, we also can image the structural fingerprint fo

287 here lithography, and multistep reactive ion etching were incorporated into nanofluidic channels.

288 During etching, when ice is allowed to sublime after fracturing

289 ed on hydrofluoric acid (HF) electrochemical etching which is undesirable given the significant safet

290 nsport, and also solution ions and thin film etching, which can form the foundation of future studies

291 ct formation, mostly via post-synthetic acid etching, which has been studied extensively on water-sta

292 non-scratched fused silica surfaces after HF etching with high-frequency ultrasonic agitation were al

293 re mitigated by mineral acid leaching and HF etching with multi-frequency ultrasonic agitation, respe

294 The method, based on etching with NH4F, is also applicable to other cage-cont

295 se-based rayon microfibers through selective etching with oxygen plasma, forming a nanoscale open-por

296 his communication indicates the potential of etching with sub- and/or supercritical water for reprodu

297 face of a fused silica capillary prepared by etching with supercritical water.

298 of the gold surface has shown that overnight etching with warm nitric acid increases the surface area

299 um) are formed by successive electrochemical etchings with different current densities.

300 stencil mask and oxygen plasma reactive-ion etching, with a subsequent polymer-free direct transfer