ライフサイエンスコーパス: ferroelectric

1 effective local negative permittivity in the ferroelectric.

2 nce, organic plastic crystal electrolytes or ferroelectrics.

3 rols the switching dynamics of such improper ferroelectrics.

4 omains underpins function in applications of ferroelectrics.

5 ting in elastocaloric effect associated with ferroelectrics.

6 a crucial role in photovoltaic properties of ferroelectrics.

7 ly used to describe the structure of relaxor ferroelectrics.

8 m thickness is reduced, unlike in perovskite ferroelectrics.

9 ng, and beyond the framework of conventional ferroelectrics.

10 0.3)MnO(3) and an electroactive substrate of ferroelectric 0.68Pb(Mg(1/3)Nb(2/3))O(3)-0.32PbTiO(3) in

11 epitaxial films of the prototypical relaxor ferroelectric 0.68PbMg(1/3) Nb(2/3) O(3) -0.32PbTiO(3) a

12 ng piezoelectric(1-4), pyroelectric(5,6) and ferroelectric(7-9) effects has attracted considerable at

13 arises at head-to-head domain boundaries in ferroelectric a(1) /a(2) twin structures.

14 uced domain wall movement, making this phase ferroelectric, a 3D uniaxial nematic having a spontaneou

15 ious candidates, thin films based on relaxor ferroelectrics, a special kind of ferroelectric with nan

16 ectric toroidal order and a high-temperature ferroelectric a1/a2 phase.

17 es and studied their structural, dielectric, ferroelectric and energy density characteristics.

18 This long-range array of ferroelectric and ferroelastic domains can be useful for

19 of these findings on finite size effects in ferroelectric and multiferroic materials more broadly ex

20 ct-engineered perovskite oxides that exhibit ferroelectric and photovoltaic properties are promising

21 n improving large polarizations in ultrathin ferroelectrics and are meaningful for the development of

22 ization is comparable to that of solid state ferroelectrics and is close to the average value obtaine

23 emerged as novel semiconductors for organic ferroelectrics and promise the wide chemical diversity o

24 c crystals is typically limited to parallel (ferroelectric) and antiparallel (antiferroelectric) coll

25 ated with historical data from literature on ferroelectrics, and expanded to functional materials for

26 A molecular ferroelectric architecture with resonant inclusions then

27 Among such ferromagnetic ferroelectrics are conical spin spiral magnets with a si

28 or decades due to the fact that vacancies in ferroelectrics are often charged and polarization in cha

29 Ferroelectrics are usually inflexible oxides that underg

30 synthesized freestanding single-crystalline ferroelectric barium titanate (BaTiO(3)) membranes with

31 While polarization inherently exists in ferroelectric barium titanate (BaTiO3), its high permitt

32 ute towards polarization-driven memories and ferroelectric-based advanced transistors.

33 led chirality with potential applications in ferroelectric-based information technologies.

34 unique three-phase nanostructure combining a ferroelectric BaTiO(3) , a wide-bandgap semiconductor of

35 Here, using the ferroelectric BaTiO(3) , production of precisely strain-

36 A ferroelectric BaTiO(3) -based pyro-piezoelectric sensor

37 eld induced structural phase transition in a ferroelectric BaTiO3 nanoparticle.

38 0.3MnO3 electrodes separated by an ultrathin ferroelectric BaTiO3 tunnel barrier, where a head-to-hea

39 ature of the cocrystals, required to observe ferroelectric behavior, is demonstrated using second har

40 s at room temperature were attributed to its ferroelectric behavior.

41 ), retains the polar space group of 1 and is ferroelectric below 260 K.

42 ies due to the formation of a self-polarized ferroelectric beta-phase and the creation of an electret

43 Distinct from traditional perovskite ferroelectrics, Bi(2) WO(6) with a layered structure sho

44 lectric) domain walls in the hybrid improper ferroelectric Ca[Formula: see text]Ti[Formula: see text]

45 duced structural transitions in a polydomain ferroelectric can have profound effects on its electroth

46 Relaxor ferroelectric ceramics and polymers are promising candid

47 ts of the local spontaneous polarization and ferroelectric coercive field in BiFeO(3) The thickness-r

48 d the semiempirical Kay-Dunn scaling law for ferroelectric coercive fields.

49 Molecular ferroelectrics combine electromechanical coupling and el

50 ronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such a

51 ergy efficient spin-orbitronic devices using ferroelectric control.

52 ases dramatically when the energy gap of the ferroelectric critical modes is suppressed, i.e., as the

53 r results indicate not only the absence of a ferroelectric critical thickness but also enhanced polar

54 performance of the commonly used transparent ferroelectric crystal LiNbO(3).

55 nganese(II), an organic-inorganic perovskite ferroelectric crystal processed from aqueous solution, h

56 We demonstrate a scaffold-supported ferroelectric crystalline lattice that enables self-heal

57 n engineering, and we expect the transparent ferroelectric crystals reported here to provide a route

58 r to enhance the piezoelectricity of relaxor ferroelectric crystals.

59 Here, a novel improper ferroelectric, CsNbW(2) O(9) , with the hexagonal tungst

60 rged conducting domain walls in the improper-ferroelectric Cu3B7O13Cl.

61 lectricity is promising for high-performance ferroelectric devices based on polarization-controllable

62 Ferroelectric devices offer the potential to reach sub-n

63 -for example, enhancing the capacitance of a ferroelectric-dielectric heterostructure(4,7,14) or impr

64 nt of steady-state negative capacitance in a ferroelectric-dielectric heterostructure.

65 i-domain state, the minimum potential at the ferroelectric-dielectric interface and hence, the minimu

66 ng high transparency and piezoelectricity by ferroelectric domain engineering, and we expect the tran

67 ferroelectric material, we study 180 degrees ferroelectric domain formation in MFIM and MFIS stacks a

68 strain gradient are strongly associated with ferroelectric domain switching and continuous dipole rot

69 or almost entirely quenched by an underlying ferroelectric domain wall depending on its chirality, an

70 Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, tran

71 Ferroelectric domain walls exhibit a number of new funct

72 res the diverse electronic properties of the ferroelectric domain walls for application in low-dimens

73 Ferroelectric domain walls have continued to attract wid

74 Here, we explore the physics of the ferroelectric domain walls in BiFeO(3) using this method

75 Ferroelectric domain walls in single-crystal complex oxi

76 The physics of ferroelectric domain walls is explored using the Bayesia

77 One of the most prominent features of the ferroelectric domain walls is their electrical conductiv

78 with local strains generated by a network of ferroelectric domain walls.

79 -proven fractional dimensionality of 2.5 for ferroelectric domain walls.

80 We analyze the ferroelectric domain-wall induced negative capacitance (

81 rties of ferroelastic (90[Formula: see text] ferroelectric) domain walls in the hybrid improper ferro

82 rated by the notable features of 180 degrees ferroelectric domains and an extrapolated transition tem

83 TAFM enables volumetric imaging of ferroelectric domains in BiFeO(3) with a significant imp

84 quench, the non-equilibrium self-assembly of ferroelectric domains in ultrathin films of Pb(Zr(0.4)Ti

85 mains, can be described by ferromagnetic and ferroelectric domains only.

86 t by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-or

87 polysulfide entrapping strategy based on the ferroelectric effect has been demonstrated for the first

88 ignificant improvement of transformation and ferroelectric energy conversion properties.

89 nt-defect-mediated large piezoelectricity in ferroelectrics especially at the morphotropic phase boun

90 predictions strongly suggest the metal-free ferroelectric family of materials as the best candidates

91 hich are hindered by the phenomenon known as ferroelectric fatigue that leads to the degradation of f

92 ions of SrRuO3 /BaTiO3 /SrRuO3 (SRO/BTO/SRO) ferroelectric (FE) capacitors.

93 astable, unable to reach, spontaneously, the ferroelectric (FE) ground state at low temperature where

94 oping multifunctional materials, spin-driven ferroelectrics featuring both spontaneous magnetization

95 riven ferroelectric hysteresis loop in a non-ferroelectric, ferroelastic bulk material.

96 gest that PbPdT thin films are multiferroic (ferroelectric-ferromagnetic) at room temperature.

97 and capacitance tunable by external stimuli (ferroelectric field and magnetic field).

98 loited to realize a giant enhancement of the ferroelectric field effect in a prototype Mott field-eff

99 e report dielectric ultracapacitors based on ferroelectric films of Ba(Zr0.2,Ti0.8)O3 which display h

100 opologically enhanced functionalities within ferroelectric films.

101 signing and tuning the desired properties of ferroelectric films.

102 th polarization cycling and their effects on ferroelectric functionality.

103 Size effects in ferroelectrics have been thoroughly investigated in pero

104 tely designed band alignment in this layered ferroelectric heterostructure provide an opportunity to

105 report a pressure study of the metamagnetic/ferroelectric hybrid heterostructure of a quenched FeRh

106 ally leaky materials as MAPbI3, we show here ferroelectric hysteresis from well-characterized single

107 rate the existence of an electrically driven ferroelectric hysteresis loop in a non-ferroelectric, fe

108 This excludes normal measurements of a ferroelectric hysteresis loop, to prove ferroelectricity

109 layers of ferromagnetic Cr(2)Ge(2)Te(6) and ferroelectric In(2)Se(3), thereby leading to all-atomic

110 imultaneously, the multi-domain state of the ferroelectric induces non-homogeneous potential in the u

111 promising due to its theoretically predicted ferroelectric instability and the higher earth abundance

112 esence of soft optical phonons and incipient ferroelectric instability in (GeSe)(0.9)(AgBiSe(2))(0.1)

113 ttering of heat carrying acoustic phonons by ferroelectric instability induced soft transverse optica

114 eoretical analysis reveals its vicinity to a ferroelectric instability which generates large anomalou

115 ts, SHG-active magnetic materials, pyro- and ferroelectrics, ionic conductors as well as electrochemi

116 The tunability of electrical polarization in ferroelectrics is instrumental to their applications in

117 ing of the carriers to the critical modes in ferroelectrics is predicted to be small.

118 The ferroelectric large polaron may form in other crystallin

119 re, we describe a new class of polarons, the ferroelectric large polaron, proposed initially by Miyat

120 We suggest that the ability to form ferroelectric large polarons can be a general principle

121 recisely controlled by the parameters of the ferroelectric layer and the number of layers.

122 In addition, we show that with the ferroelectric layer being in the 180 degrees multi-domai

123 e a sizable on-current, the thickness of the ferroelectric layer needs to be scaled down below 5 nm.

124 ty for resonator with an arbitrary number of ferroelectric layers is formulated.

125 owever, the polarization in these ultra-thin ferroelectric layers is very small, which leads to a low

126 Finally, the possible application of the two ferroelectric layers structures for switchable microwave

127 properties of thin films of the prototypical ferroelectric lead titanate (PbTiO(3)) on a metallic str

128 he formation of a large polaron, likely with ferroelectric-like local ordering.

129 ations, strain drives a tendency toward more ferroelectric-like order, there are certain unit cells t

130 years ago, Anderson and Blount proposed that ferroelectric-like structural phase transitions may occu

131 The local ordering is reflected in the ferroelectric-like THz dielectric responses of lead hali

132 thick films of the technologically important ferroelectric LiNbO(3) is explored.

133 esults of switching behavior of the improper ferroelectric LuFeO(3) are presented.

134 ittivity is not an intrinsic property of the ferroelectric material and therefore, is dependent on it

135 The ferroelectric material barium titanate (BaTiO3) has garn

136 fication with dielectric polarization from a ferroelectric material in vacuum to dramatically enhance

137 heta(SHE)(net), in Pt at an interface with a ferroelectric material PZT (PbZr(0.2)Ti(0.8)O(3)), using

138 atomic resolution, the local regions in the ferroelectric material where a state of negative capacit

139 peak as a function of pressure in the nearly ferroelectric material, strontium titanate, which reveal

140 Considering Hf(0.5)Zr(0.5)O(2) as the ferroelectric material, we study 180 degrees ferroelectr

141 ing the sizes of devices, the preparation of ferroelectric materials and devices is entering the nano

142 As ferroelectric materials are made thinner, however, the f

143 thermodynamic potential energy functions for ferroelectric materials but also suggests a family of ca

144 Ultrathin ferroelectric materials could potentially enable low-pow

145 The unique properties of ferroelectric materials enable a plethora of application

146 his study shows that elastocaloric effect in ferroelectric materials is capable of converting waste m

147 The device potential of these 2D ferroelectric materials is further demonstrated using th

148 Ferroelectric materials possess spontaneous polarization

149 Ferroelectric materials show electrically switchable ele

150 e capacitance is a newly discovered state of ferroelectric materials that holds promise for electroni

151 ly, the advantageous functional responses in ferroelectric materials that make them attractive for us

152 s (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a seq

153 Ferroelectric materials use both the pyroelectric effect

154 energetically favorable domain boundaries in ferroelectric materials, we propose that a ferroelectric

155 arge EC strengths of a metal-free perovskite ferroelectric [MDABCO](NH(4) )I(3) (MDABCO) are predicte

156 The ultraflexible epitaxial ferroelectric membranes could enable many applications s

157 the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanos

158 film thickness, allowing the realization of ferroelectric memories with device dimensions far below

159 in hindered by the lack of rapid-prototyping ferroelectric metamaterial structures.

160 metric deposition of water-soluble molecular ferroelectric metamaterials with precise spatial control

161 ersatile additive manufacturing of molecular ferroelectric metamaterials.

162 dy the multiferroic domains in ferromagnetic ferroelectric Mn2GeO4 using neutron diffraction, and sho

163 sed as non-trivial phases of low-dimensional ferroelectrics, modulated polar phases such as the dipol

164 Here we propose ferroelectric multibit cells (FMBC) utilizing the abilit

165 As a magnetically induced ferroelectric multiferroic, CuO exhibits coupling betwee

166 Ferroelastic switching in ferroelectric/multiferroic oxides plays a crucial role i

167 ls that are simultaneously ferromagnetic and ferroelectric - multiferroics - promise the control of d

168 s and even piezoresistive, piezoelectric and ferroelectric nanodevices(14).

169 elasticity was from the dynamic evolution of ferroelectric nanodomains.

170 Here, we demonstrate that ferroelectric nanodots support skyrmions the chirality o

171 figuration of polarization field in confined ferroelectric nanoparticles.

172 ectric storage applications because of their ferroelectric nature, high dielectric breakdown strength

173 Adding a ferroelectric negative capacitor to the gate stack of a

174 Topological structures based on controllable ferroelectric or ferromagnetic domain configurations off

175 ons grow upon cooling, although a long-range ferroelectric order never sets in.

176 ange polar molecular interactions that favor ferroelectric ordering, including a tendency for head-to

177 s) and their emergent physical properties in ferroelectric oxide films and heterostructures are explo

178 t between monolayer MoS(2) and a neighboring ferroelectric oxide thin film.

179 yer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the

180 e changes of the conductivity nature of some ferroelectric oxides including insulating Nb-lightly-sub

181 The wrinkled ferroelectric oxides with differently strained regions a

182 c alloys(5,6), with the notable exception of ferroelectric oxides, despite extensive theoretical and

183 hysical properties of prototypical ABO3 bulk ferroelectric oxides.

184 uggest the universality of the phenomenon in ferroelectric oxides.

185 ploying non-axis symmetric placement of bulk ferroelectric patches.

186 rs of magnitude higher compared with classic ferroelectric (Pb,La)(Zr,Ti)O(3) .

187 atomic correlations in the classical relaxor ferroelectric PbMg(1/3)Nb(2/3)O(3) (PMN).

188 investigated in thin films of the tetragonal ferroelectric PbZr(0.2) Ti(0.8) O(3) .

189 Ferroelectric perovskite oxides such as BaTiO3 and PbTiO

190 oelectric polarization in ultrathin films of ferroelectric perovskites needs to be achieved in order

191 Ferroelectric perovskites present a switchable spontaneo

192 rganic-organic hybrid halide perovskites and ferroelectric perovskites) for future multifunctional en

193 A group of polarized ferroelectric (PFE) polymers are doped into the methylam

194 an ultrafast phase transition into a hidden ferroelectric phase can be dynamically induced in quantu

195 tabilized a simultaneously ferrimagnetic and ferroelectric phase in a Y-type hexaferrite single cryst

196 thermore, we show that the efficiency in the ferroelectric phase of strontium barium niobite is two o

197 electrocaloric devices based on first-order ferroelectric phase transformations identify the lowerin

198 The compound experiences a ferroelectric phase transition ascribed to the 6s(2) lon

199 f starting temperatures when the first-order ferroelectric phase transition is driven supercritically

200 frequency vibration points to a photoinduced ferroelectric phase transition, with a spatial domain di

201 diagram is that ice chi is a rare polarized ferroelectric phase, whose nucleation/growth occurs only

202 controls the director field structure of the ferroelectric phase.

203 ites because of their chemical stability and ferroelectric phase.

204 ence is observed from noncentrosymmetric and ferroelectric-phase Sr(3) Sn(2) O(7) doped with rare ear

205 room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hi

206 ferroelectric switching superimposed by non-ferroelectric phenomena, such as electrochemical deforma

207 erein we report the fabrication, dielectric, ferroelectric, piezo-response force microscopy, and magn

208 Ferroelectric piezoelectric nature of the films was conf

209 ions which is a result of the realignment of ferroelectric polarisation upon light irradiation.

210 to investigate the influence of vacancies on ferroelectric polarization and polarization switching in

211 r practical applications, simultaneous large ferroelectric polarization and strong magnetoelectric co

212 Pt layer is thinner than 6 nm, switching the ferroelectric polarization even changes the sign of thet

213 mage the interfacial charge distribution and ferroelectric polarization in a SrTiO(3)/BiFeO(3) hetero

214 Full control of the ferroelectric polarization in ultrathin films of ferroel

215 Fe(3+) -O-Co(3+) bonds, while the suppressed ferroelectric polarization is due to the enhanced leakag

216 t)-layer Pt at the PZT/Pt interface when the ferroelectric polarization is inverted, as supported by

217 age across a (011)-cut PMN-PT substrate, the ferroelectric polarization is re-oriented, which results

218 An enhanced ferroelectric polarization of 122.43 muC/cm(2) is predic

219 s are reversibly controlled by switching the ferroelectric polarization of BFO.

220 The effect of the ferroelectric polarization on theta(SHE)(net) is enhance

221 We further directly probe the ferroelectric polarization through a non-local monolayer

222 uch as the magnetic-field-driven reversal of ferroelectric polarization with no change of spin-helici

223 ublattices generate magnetic-field-dependent ferroelectric polarization with opposite signs.

224 right-handed vectorial relationship between ferroelectric polarization, antiferromagnetic vector and

225 terial PZT (PbZr(0.2)Ti(0.8)O(3)), using its ferroelectric polarization.

226 Thus, the Belgian-waffle-shaped ferroelectric polaron in the three-dimensional LHP cryst

227 n ferroelectric materials, we propose that a ferroelectric polaron localizes to planar boundaries of

228 via the combination of internal doping by a ferroelectric polymer and external control by an electri

229 eviews the up-to-date accomplishments in the ferroelectric polymer field, with focus on materials inv

230 two classes of shift current photovoltaics, ferroelectric polymer films and single-layer orthorhombi

231 The addition of ceramic fillers into a ferroelectric polymer leads to augmentation of the local

232 een the nanofiller and the polymer matrix in ferroelectric polymer nanocomposites by combining atomic

233 roelectric, and electrocaloric properties of ferroelectric polymer nanocomposites.

234 Here a new class of hybrid films composed of ferroelectric polymer nanowire array and anodic aluminum

235 Ferroelectric polymers represent a core group of materia

236 ing power density, outperforming the current ferroelectric polymers, ceramics, and composites.

237 oelectric materials, magnetic and dielectric/ferroelectric properties couple to each other.

238 nvestigations reveal that the degradation of ferroelectric properties is correlated with a local chem

239 cts of the bond-breaking on the local static ferroelectric properties of both top and bottom layers o

240 We also summarize the dielectric and ferroelectric properties of individual BaTiO3 NCs and de

241 ive field in BiFeO(3) The thickness-resolved ferroelectric properties strongly correlate with cross-s

242 ric fatigue that leads to the degradation of ferroelectric properties with polarization cycling.

243 aterials, which exhibit coupled magnetic and ferroelectric properties, have attracted tremendous rese

244 decade owing to its excellent dielectric and ferroelectric properties.

245 ning probe technique for high-resolution, 3D ferroelectric property measurements.

246 d show that an enhancement of T(c) near to a ferroelectric quantum critical point can arise due to th

247 ase diagram of a material on the border of a ferroelectric quantum critical point comprising ferroele

248 c critical modes is suppressed, i.e., as the ferroelectric quantum critical point is approached in a

249 sition collapses toward absolute zero as the ferroelectric quantum critical point is approached.

250 roelectric quantum critical point comprising ferroelectric, quantum critical paraelectric, and hybrid

251 space-charge screening potential at the 2DEG/ferroelectric regions which is a result of the realignme

252 e large electromechanical effects in relaxor ferroelectrics requires intimate knowledge of how the lo

253 l state of negative capacitance in which the ferroelectric resides.

254 re-dependent dielectric anomalies as well as ferroelectric reversible spontaneous polarization.

255 arization is comparable to other spin-driven ferroelectric RMnO(3) films.

256 dynamics; whereas Smax in relaxor and normal ferroelectrics scales as Smax V cr(-0.37), which tallies

257 0.95Zr0.05TiO3, Pb0.8Ba0.2ZrO3 and polymeric ferroelectrics scales proportionally with V cr(-2.2), ow

258 ore, the development of highly piezoelectric ferroelectric semiconductor remains challenging.

259 , including piezoelectric, pyroelectric, and ferroelectric semiconductors.

260 Relaxor ferroelectric single crystals have triggered revolution

261 Sr3 Sn2 O7 is the first room-temperature ferroelectric Sn insulator with switchable electric pola

262 its intrinsically high charge mobility, the ferroelectric SrTiO3 thin shell significantly improves t

263 trates how the vortex state emerges from the ferroelectric state by varying the thickness of the conf

264 Deterministic creation of multiple ferroelectric states with intermediate values of polariz

265 ss of polar topologies possible in ultrathin ferroelectric structures and bring forward the prospect

266 To release the stored energy, the multilayer ferroelectric structures are subjected to adiabatic comp

267 w pathways to control the exotic topological ferroelectric structures for future nanoelectronics and

268 itation of acoustic eigenmodes in multilayer ferroelectric structures is considered, and the principl

269 ion is analogous to a transition between two ferroelectric structures, where in-spite of strong elect

270 improper ferroelectrics compared to a proper ferroelectric such as PbTiO(3) .

271 eedom in atomically precise, low-dimensional ferroelectric superlattices can lead to exotic polar str

272 ate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including r

273 ustrated by application to recently reported ferroelectric switching experiments in PbZr(0.2) Ti(0.8)

274 e extraction of latent features of nanoscale ferroelectric switching from piezoresponse force spectro

275 DTO served as an excellent top electrode for ferroelectric switching in BiFeO(3) with no sign of degr

276 o underlying structural modulations and test ferroelectric switching models against real space measur

277 sted, but rather well described by classical ferroelectric switching superimposed by non-ferroelectri

278 llenging due to the inherent bi-stability of ferroelectric switching.

279 terface engineering to develop new lead-free ferroelectric system for energy storage devices.

280 stigated in perovskite oxides-the archetypal ferroelectric system(3).

281 The phenomenon should be possible in other ferroelectrics systems through domain engineering.

282 ould potentially enable low-power perovskite ferroelectric tetragonality logic and nonvolatile memori

283 use most high-performance piezoelectrics are ferroelectrics that contain high-density light-scatterin

284 scale strain engineering with thin films and ferroelectrics the transition metal dichalcogenide MoTe(

285 n traditional thin-film ceramics and polymer ferroelectrics, they require the application of very hig

286 n traditional thin-film ceramics and polymer ferroelectrics, they require the application of very hig

287 In ferroelectric thin films and superlattices, the polariza

288 es the energy storage performance of relaxor ferroelectric thin films.

289 metal-dielectric-metal capacitors suggest a ferroelectric to paraelectric transition above 670 K.

290 that transcends the inherent bi-stability of ferroelectrics to create non-volatile, deterministic, an

291 , and could contribute to the advancement of ferroelectrics towards functionalities incorporating eme

292 O) and (Ca,Zr)-doped BTO across paraelectric-ferroelectric transition.

293 d in dielectrics on the border of displacive ferroelectric transitions.

294 Ferroelectric tunneling junctions (FTJs) with tunable tu

295 detector based on the n = 2 homologue of the ferroelectric two-dimensional DJ-OIHP (AMP)(MA)Pb(2)I(7)

296 Ferroelectric vortices formed through complex lattice-ch

297 Different from a typical ferroelectric whose electric polarization is easily satu

298 layers (ALs) have recently been shown to be ferroelectric with in-plane polarization.

299 on relaxor ferroelectrics, a special kind of ferroelectric with nanometer-sized domains, have attract

300 e external stimuli for domain engineering in ferroelectrics with significant current leakage.