ライフサイエンスコーパス: gallium

1 onvection experiments using the liquid metal gallium.

2 with magnesium, calcium, zinc, aluminum, or gallium.

3 agent)-IL2 ((18)F-AlF-RESCA-IL2) and (68)Ga-gallium-(1,4,7-triazacyclononane-4,7-diacetic acid-1-glu

4 a remarkable family of boron, aluminium and gallium [(18)F]-fluoride anion complexing agents which c

5 hy, labeled leukocyte scintigraphy (LS), and Gallium-67 citrate scintigraphy for the diagnosis of CIE

6 sing fluorine 18 ((18)F) fluorodeoxyglucose, gallium 68 ((68)Ga) tetraazacyclododecane tetraacetic ac

7 Conclusion Our results suggest that gallium 68 ((68)Ga)-labeled Glu-urea-Lys (Ahx)-HBED-CC l

8 have reported the additive value of combined gallium 68 ((68)Ga)-labeled Glu-urea-Lys (Ahx)-HBED-CC l

9 All patients were evaluated with gallium 68 DOTATATE PET/CT, and in cases of high-grade t

10 arative performance between fluciclovine and gallium 68 or (18)F prostate-specific membrane antigen (

11 Gallium-68 ((68)Ga) is a generator-produced radionuclide

12 ither of the positron-emitting radionuclides gallium-68 (t(1/2) = 68 min) or zirconium-89 (t(1/2) = 3

13 Gallium-68 is a generator-produced radionuclide for posi

14 ented here, which can be labeled with either gallium-68 or zirconium-89, have the potential to increa

15 racers were synthesized, radiometalated with gallium-68, and evaluated in vitro and in vivo, in mice

16 This study tested the efficacy of gallium-68-labeled DOTATATE ((68)Ga-DOTATATE), a somatos

17 adiolabeled with carbon-11, fluorine-18, and gallium-68.

18 -temperature liquid metals, such as nontoxic gallium alloys, show enormous promise to revolutionize s

19 Galfenol (Iron-gallium) alloys have attracted significant attention as

20 rystals with tunable properties according to gallium amount.

21 conductivity (62 +/- 2.28 W m(-1) K(-1) for gallium and 57 +/- 2.08 W m(-1) K(-1) for EGaInSn at a 4

22 elators make strong complexes with trivalent gallium and are able to bind to bioactive molecules thro

23 n to grow rapidly at small concentrations of gallium and at high temperatures, where it becomes extre

24 nd Mendeleev predicted the existence of both gallium and germanium as well.

25 pped Au and contacted by a eutectic alloy of gallium and indium top contacts.

26 2)- or -CONH-, and EGaIn = eutectic alloy of gallium and indium).

27 d silver, and EGaIn is the eutectic alloy of gallium and indium.

28 ed silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of in

29 FO) nanocrystals (NCs) with control over the gallium and iron content.

30 PSMA I&T and its cold gallium and lutetium analog revealed nanomolar affinity

31 als important in emerging electronics (e.g., gallium and selenium) are largely those related to suppl

32 The contact interface between gallium and the rough object is illustrated in the magni

33 e erbium, chromium-doped: yttrium, scandium, gallium, and garnet (Er,Cr:YSGG) laser (ERL) and minimal

34 y to national minor metals systems: rhenium, gallium, and germanium in the United States in 2012.

35 c hydroxide structures formed from aluminum, gallium, and indium.

36 he activation barrier of the key step of the gallium- and indium-catalyzed cycloisomerization of 1,6-

37 (nano-TPV) power generators consisting of a gallium antimonide cell paired with a broadband tungsten

38 The most important applications of gallium are NdFeB permanent magnets, integrated circuits

39 We report gallium arsenide (GaAs) growth rates exceeding 300 um h(

40 Here we image gallium arsenide (GaAs) nanowires during growth as they

41 Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon

42 dy correlations among electrons and holes in gallium arsenide (GaAs) quantum wells.

43 ed on an electrically thin high-permittivity gallium arsenide (GaAs) substrate layer.

44 t ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory

45 lthough semiconductors such as silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) hav

46 The lattice matched Indium Gallium Arsenide (In0.53Ga0.47As) is identified as a bet

47 sition charged arsenic (As) vacancies in the gallium arsenide 110 [GaAs(110)] surface with atomic pre

48 The semiconductor materials include silicon, gallium arsenide and gallium nitride, co-integrated with

49 C) of X-rays to long wavelength radiation in gallium arsenide and lithium niobate crystals, with effi

50 Single electron spins in gallium arsenide are a leading candidate among implement

51 unting (TCSPC) that is well suited to indium gallium arsenide avalanche photodiode (APD) detectors op

52 ) demonstrates that heat-carrying phonons in gallium arsenide have a much wider mean-free path spectr

53 igh-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of hig

54 the liquid helium temperature, based on the gallium arsenide homojunction interfacial workfunction i

55 High-temperature annealing of gallium arsenide in vacuum causes excess evaporation of

56 Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireles

57 able metasurface consisting of subwavelength gallium arsenide nanoparticles supporting Mie-type reson

58 dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparti

59 uorescence measurement using a 655-nm Indium Gallium Arsenide Phosphide (InGaAsP) based diode laser r

60 , consistent with coupling rates obtained in gallium arsenide quantum dots.

61 lets in an electron-hole plasma created in a gallium arsenide quantum well by ultrashort optical puls

62 ect observations of high-order coherences in gallium arsenide quantum wells, achieved using two-dimen

63 an elegant cut pattern is made in thin-film gallium arsenide solar cells, which are then stretched t

64 rface smooth, leading to direct reuse of the gallium arsenide substrate.

65 s the separation of III-V device layers from gallium arsenide substrates and has been extensively exp

66 particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of

67 In addition to showing full wafer gallium arsenide thin film transfer onto both rigid and

68 nd sometimes potentially toxic (for example, gallium arsenide) materials.

69 In direct-gap semiconductors such as gallium arsenide, the exciton lifetime is too short for

70 oday, gallium nitride-, silicon-, and indium gallium arsenide--based detectors are used for different

71 x-ray scattering (TRXS) on bulk crystalline gallium arsenide.

72 iple Bragg reflections in laser-excited bulk gallium arsenide.

73 weakly spin-orbit-coupled materials such as gallium arsenide.

74 The compound semiconductor gallium-arsenide (GaAs) provides an ultra-clean platform

75 A diode laser (aluminum-gallium-arsenide, 660 nm) was applied to test sites imme

76 evaporation of arsenic, with accumulation of gallium as liquid droplets on the surface.

77 omposite emissive layer, and eutectic indium-gallium as the cathode.

78 an be achieved by heating and oxidizing pure gallium at high temperatures (~ 1000 degrees C) in the p

79 We used nontoxic eutectic gallium-based alloys as a reaction solvent and co-alloye

80 sition system targets and recent research on gallium-based anti-infectives.

81 orum sensing inhibitors, biofilm disruptors, gallium-based drugs, cyclodextrin inhibitors of pore-for

82 al affinity chromatography (SIMAC) employing gallium-based immobilized metal affinity chromatography

83 Soft composites that use droplets of gallium-based liquid metal (LM) as the dispersion phase

84 Gallium-based liquid metals (LMs) are promising candidat

85 m from aspherical air bubble collapse near a gallium-based liquid-metal microparticle.

86 istry of [Ga-(HBED-NN)] for potential use in gallium-based radiopharmaceuticals.

87 eature unsupported copper-aluminum or copper-gallium bonds with short metal-metal distances, Cu-Al =

88 Optimized geometries of known aluminum and gallium-bridged [1]ferrocenophanes (Al(Pytsi) (6a), Ga(P

89 ction of (phosphanyl)phosphaketenes with the gallium carbenoid Ga(Nacnac) (Nacnac=HC[C(Me)N(2,6-i-Pr(

90 As for the gallium-catalyzed Friedel-Crafts alkylation, an unusual

91 In the case of the gallium-catalyzed hydroarylation of arenynes, the esters

92 Copper, indium, and gallium chalcogenide nanocrystals (binary, ternary, and

93 rent NOTA-modified somatropins as well as to gallium chelated NOTA-functionalities (Ga-10:1 NOTA-soma

94 :C{N(2,6-(i)Pr(2)C(6)H(3))CH}(2)] (1), with gallium chloride in a 1:4 ratio in toluene affords the d

95 simple gallium siderophore complexes such as gallium citrate have shown good antibacterial activities

96 The most studied complex has been gallium citrate, which exhibits broad activity against m

97 a41 prefer architectures with vertex-sharing gallium clusters, whereas electron-rich compounds, like

98 preliminary generation of a key 1,2-dipolar gallium complex and its subsequent participation in annu

99 We report a nickel-gallium complex featuring a Ni(0)-->Ga(III) bond that sh

100 rocess of this type catalyzed by a molecular gallium complex.

101 These gallium complexes represent a new class of anti-infectiv

102 ungi, researchers have begun to evaluate new gallium complexes to target key pathogens.

103 diate in situ generation of 1,2-zwitterionic gallium complexes with [Ga(L)(3)](3+)[GaX(4)(-)](3) comp

104 on work with a water-soluble bis-sulfonated gallium corrole in both cellular and rodent-based models

105 We conclude that carboxylated gallium corroles are promising chemotherapeutics with th

106 ing revealed facile uptake of functionalized gallium corroles by all human cancer cells that followed

107 >> 3 > 2 >> 1 (intracellular accumulation of gallium corroles was fastest in melanoma cells).

108 m demand derived from a dynamic model of the gallium cycle.

109 num cycle, and compare it with scenarios for gallium demand derived from a dynamic model of the galli

110 The aluminum and gallium dichlorides (Mamx)ECl(2)1a (E = Al; 82%) and 1b

111 2)M (M = Fe, Ru) and respective aluminum and gallium dihydrides.

112 e is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has

113 The gallium distribution pattern in tumor and liver tissue r

114 tissue samples from mice treated with 1, the gallium distribution pattern was analyzed and compared t

115 We present a new colloidal synthesis of gallium-doped zinc oxide nanocrystals that are transpare

116 (68)Gallium-DOTATATE positron emission tomography with compu

117 (68)Ga-DOTATOC-PET/MRI ((68)Gallium-DOTATOC-positron emission tomography/magnetic re

118 and uniquely defined the binding pocket for gallium enterobactin (GaEnt).

119 ndwiched between indium tin oxide and indium-gallium eutectic alloy exhibit a low turn-on voltage and

120 Gallium exhibits highly reversible and switchable adhesi

121 M. Sitti and co-workers find that gallium exhibits highly reversible and switchable adhesi

122 , y = 0-4.0) has been isolated from a molten gallium flux reaction.

123 n a transmission electron microscope grid by gallium focused-ion-beam milling.

124 The use of liquid metals based on gallium for soft and stretchable electronics is discusse

125 is a simple, convenient source of low-valent gallium for synthetic chemistry and catalysis.

126 ghtly focussed beam of energetic ions, often gallium (Ga(+)), FIB can sculpt nanostructures via local

127 in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T >/=

128 We describe a solution to this problem using gallium (Ga) in probe construction, taking advantage of

129 Although gallium (Ga) is a rare element, it is widely used in sem

130 We report a facile colloidal synthesis of gallium (Ga) nanoparticles with the mean size tunable in

131 development of two novel antibiofilm agents; gallium (Ga) or zinc (Zn) complexed with protoporphyrin

132 Gallium (Ga), a group III metal, is of fundamental inter

133 ng a sodium-potassium (Na-K) alloy anode and gallium (Ga)-based alloy cathodes is demonstrated.

134 TMP (the base) and tris(trimethylsilylmethyl)gallium [Ga(CH2 SiMe3 )3 , GaR3 ] (the trap) that, opera

135 iCl(4) in propylene carbonate using a liquid gallium [Ga(l)] pool as the working electrode consistent

136 le activation of strong C-F bonds across the gallium-gallium bond.

137 n the canonical frustrated magnet gadolinium gallium garnet (Gd3Ga5O12).

138 um iron garnet (YIG) films coated gadolinium gallium garnet (GGG) substrate.

139 -thick Ce:YIG films were grown on Gadolinium Gallium Garnet substrates with (100), (110) and (111) or

140 The erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser has been widely used i

141 cently the erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser.

142 Gallium has been labeled as a critical metal due to rapi

143 ed under physiological conditions, therefore gallium has the potential to serve as an iron analog, an

144 Epitaxial galfenol, an alloy of iron and gallium, has been shown to be a highly suitable material

145 In contrast to Hg, liquid metals based on gallium have low toxicity and essentially no vapor press

146 noparticles made of non-noble metals such as gallium have recently attracted significant attention du

147 compound with two separated two-coordinated gallium(I) centers possessing both a lone pair of electr

148 ated in the form of the bimetallic silver(I)/gallium(I) cluster anion [Ag(4) {Ga(OTf)(3) }(4) (mu-Ga)

149 eneration of complexes containing indium(i), gallium(i), germanium(ii), and even silicon(ii).

150 form, and continuous films of both defective gallium(II) sulfide (GaS): GaS(0.87) and stoichiometric

151 Tris(8-quinolinolato)gallium(III) (1, KP46) is a very promising investigation

152 The sulfonated gallium(III) corrole functions both for tumor detection

153 Sulfonated gallium(III) corroles are intensely fluorescent macrocyc

154 Isothermal titration calorimetry of a gallium(III) derivative of NP4 demonstrates that the hem

155 Gallium(III) is structurally similar to iron(III), excep

156 We report derivatives of gallium(III) tris(pentafluorophenyl)corrole, 1 [Ga(tpfc)

157 find that 25 percent doping of aluminium and gallium in alpha iron, a naturally abundant and low-cost

158 the thin oxide layer that forms on eutectic gallium indium (EGaIn) in a controlled reproducible mann

159 Eutectic gallium indium (EGaIn) is a liquid metal alloy at room t

160 used to assemble, align, and sinter eutectic gallium indium (EGaIn) microdroplets in uncured poly(dim

161 anoporous, density-graded surface of 'black' gallium indium phosphide (GaInP(2)), when combined with

162 We also demonstrate gallium indium phosphide growth at rates exceeding 200 u

163 bules filled with liquid conductor (eutectic gallium indium, EGaIn), and fabricated using a simple ro

164 t thermally robust monomeric MX2 radicals of gallium, indium and thallium.

165 ive-valence-electron bis(boryl) complexes of gallium, indium, and thallium undergo oxidative M-C bond

166 Among others, specialty metals (e.g., gallium, indium, and thallium) and some heavy rare earth

167 t the SAMs, while top electrodes of eutectic gallium-indium (EGaIn) contact the SAMs to form metal/SA

168 e strong UV plasmonic resonances of eutectic gallium-indium (EGaIn) liquid-metal alloy nanoparticles

169 ll-soft electronic devices based on eutectic gallium-indium alloy (EGaIn) using a hybrid method utili

170 microelectronics composed of a liquid-phase Gallium-Indium alloy with micron-scale circuit features

171 e-stripped silver substrate; EGaIn: eutectic gallium-indium alloy) which shows reproducible rectifica

172 al" functional groups, and EGaIn is eutectic gallium-indium alloy.

173 nosphere composed of a liquid-phase eutectic gallium-indium core and a thiolated polymeric shell.

174 -doped silicon bottom contact and a eutectic gallium-indium liquid metal (EGaIn) top contact.

175 rupturing adjacent microcapsules containing gallium-indium liquid metal (top).

176 ce method to study charge transfer at p-type gallium-indium phosphide (p-GaInP2) interfaces criticall

177 he bottom-electrode, and a eutectic alloy of gallium-indium was used as the top-electrode.

178 quartz nanopipette tip immersed in a liquid gallium/indium alloy electrode, which not only protects

179 However, the gallium industry may need to introduce ambitious recycli

180 examined as was the influence of the primary gallium ion (Ga(+)) flux on the efficiency of these proc

181 electron microscope equipped with a focused gallium ion beam, used to sequentially mill away the sam

182 In this study, a bifunctional gallium ion immobilized magnetic pertriflated pillar[5]a

183 Simultaneously, the high loading amount of gallium ion provides immobilized metal ion affinity for

184 nstrument equipped with an X-ray detector, a gallium-ion beam mills the particle, while the electron

185 While demand for gallium is expected to rise in the future, our results i

186 The robustness of gallium is notable as it exhibits strong performance on

187 With current applications, a shortage of gallium is unlikely by 2050.

188 s not undergo room-temperature alloying with gallium, it is shown that LM-W remains a chemically stab

189 Receptor-specific binding of gallium-labeled HZ220 was characterized in PC-3 prostate

190 Gallium lanthanum sulfide glass (GLS) has been widely st

191 ine the in vitro antimicrobial activities of gallium maltolate (GaM) and 20 other antimicrobial agent

192 ic foals treated with either MaR (n = 19) or gallium maltolate (GaM; n = 19) and 19 untreated control

193 Gallium may therefore find numerous applications in tran

194 ved these rates by maximizing the gallium to gallium monochloride conversion efficiency, and by utili

195 Gallium nanoparticles (GaNPs) of different sizes are dep

196 Size-controlled gallium nanoparticles deposited on sapphire were explore

197 Thermal decomposition of zinc stearate and gallium nitrate after hot injection of the precursors in

198 Simple gallium salts such as gallium nitrate, maltolate, and simple gallium sideropho

199 Gallium nitride (GaN) and its solid solutions are excell

200 num nanoparticles supported on n- and p-type gallium nitride (GaN) are investigated as novel hybrid s

201 Room-temperature quantum emitters in gallium nitride (GaN) are reported.

202 f highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly latt

203 f-heating is a severe problem for high-power gallium nitride (GaN) electronic and optoelectronic devi

204 ht-fidelity (Li-Fi) system based on the blue Gallium nitride (GaN) laser diode (LD) with a compact wh

205 odes by creating cleaved-coupled cavities in gallium nitride (GaN) nanowires.

206 Flexible gallium nitride (GaN) thin films can enable future strai

207 Here we demonstrate the synthesis of 2D gallium nitride (GaN) via a migration-enhanced encapsula

208 Gallium nitride (GaN), a mature wide bandgap optoelectro

209 bological (friction and wear) performance of gallium nitride (GaN), through experiments and theory.

210 Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells o

211 Gallium nitride cradle-to-gate energy requirements are e

212 Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for crea

213 n now be achieved with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to the

214 Gallium nitride materials containing indium gallium nitr

215 re we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumul

216 igh-density 2D hole gas in epitaxially grown gallium nitride on aluminium nitride and show that such

217 ngle-crystalline silicon, silicon carbide or gallium nitride p-n junction photodiodes.

218 Finally, our single-crystal gallium nitride samples have a trigonal cross-section de

219 yet unsolved challenge in three-dimensional gallium nitride technology.

220 Although the performance of gallium nitride ultraviolet lasers has improved signific

221 erials include silicon, gallium arsenide and gallium nitride, co-integrated with metals, metal oxides

222 Silicon carbide and gallium nitride, two leading wide band gap semiconductor

223 on experimental permittivity data for indium gallium nitride, we have shown that between 75%-95% abso

224 Today, gallium nitride-, silicon-, and indium gallium arsenide-

225 y smooth {111} calcium oxide films on (0001) gallium nitride.

226 Gallium-nitride-based light-emitting diodes have enabled

227 nic integrated circuits through exploiting a gallium-nitride-on-sapphire platform, which provides str

228 computed tomography and functional imaging (gallium or fluorodeoxyglucose-positron emission tomograp

229 These chelated gallium or zinc complexes act as iron siderophore analog

230 the last decade, interest in the use of beta gallium oxide (beta-Ga(2)O(3)) as a semiconductor for hi

231 Monoclinic gallium oxide (beta-Ga(2)O(3)) is attracting intense foc

232 Gallium oxide (Ga(2)O(3)), one among the wide band gap o

233 nhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3 ) layer.

234 obility of aqueous solution-processed indium gallium oxide (IGO) thin-film transistors (TFTs) is sign

235 e examine the structural evolution of indium gallium oxide gel-derived powders and thin films using i

236 In particular, indium gallium oxide has garnered attention as a thin-film tran

237 Gallium oxide nanowire growth can be achieved by heating

238 d inexpensive method of growing high-density gallium oxide nanowires at high temperatures.

239 Integration of Gallium oxide with muscovite enables high-temperature pr

240 al-oxide semiconductors (In2O3 and an indium-gallium oxide).

241 have mostly focused on solid and liquid pure gallium particles immobilized on solid substrates.

242 e, we show that the chiral crystal palladium gallium (PdGa) displays multifold band crossings, which

243 ium resembles the atomic arrangement of both gallium phase II and III (the high pressure crystalline

244 s silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) have band gaps that make them ef

245 Gallium phosphide (GaP) is a material that, due to its o

246 se low-loss high-refractive-index dielectric gallium phosphide (GaP) nano-antennas with small mode vo

247 re, we report direct band gap transition for Gallium Phosphide (GaP) when alloyed with just 1-2 at% a

248 n chemistry of vinylpyridine to p-type (100) gallium phosphide (GaP).

249 active index and low absorption coefficient, gallium phosphide is an ideal material for photonic stru

250 During growth of gallium phosphide nanowires at typical V/III ratios, we

251 we report the fabrication of single crystal gallium phosphide thin films on transparent glass substr

252 ing the largest 18-membered-ring channels in gallium phosphites, denoted as NTHU-15, which displayed

253 d convection experiments in the liquid metal gallium (Pr = 0.025) over a range of nondimensional buoy

254 we present the design and synthesis of novel gallium-radiolabeled small-molecule sulfonamides targeti

255 nt result that the local structure of liquid gallium resembles the atomic arrangement of both gallium

256 Gallium's resilience following oxidation is inherently a

257 ually any complex that binds Fe(III), simple gallium salts as well as more complex siderophores and h

258 Simple gallium salts such as gallium nitrate, maltolate, and si

259 lium ions are transported to the interior of gallium-seamed pyrogallol[4]arene nanocapsules.

260 mmon thin-film PV technologies-copper indium gallium selenide (CIGS) and cadmium telluride (CdTe)-in

261 The four polymorphs of layered gallium selenide (GaSe) crystals that result from differ

262 Gallium selenide (GaSe) is a layered semiconductor and a

263 otovoltaic effect of thin-film copper indium gallium selenide cells (CIGS) is conferred by the latter

264 mpounds such as CdTe and CIGS (copper indium gallium selenide) used in solar cells in just about a de

265 anes of extracting indium from copper-indium-gallium- selenide photovoltaic cell (CIGS) leachates und

266 ch as gallium nitrate, maltolate, and simple gallium siderophore complexes such as gallium citrate ha

267 uminum saturate or decline, a shift to other gallium sources such as zinc or coal fly ash may be requ

268 ined) and Anthriscus sylvestris (hap C); one Gallium sp. (Rubiaceae) (hap undetermined); and Chenopod

269 the impact of framework and extra-framework gallium species on enriched aromatics production in zeol

270 p-xylene selectivity increased from 51% with gallium spray-dried ZSM-5 to 72% with a pore-mouth-modif

271 elastic moduli measurements performed on the gallium-stabilized delta phase of plutonium over a range

272 ve analysis of 549 patients from the phase 3 GALLIUM study (NCT01332968) assessed the relationship be

273 either bSUVmax nor bSUVrange predicted HT in GALLIUM, suggesting that there may be little benefit in

274 FT), that the recent experimentally realized gallium sulfide nanoribbons (GaSNRs) can display an intr

275 We found that the gallium supply potential is heavily influenced by the de

276 nt a description of the global anthropogenic gallium system and quantify the system using a combinati

277 a photocleavable magnetic nanoparticle-based gallium tag for tagging and enrichment as well as UV-rel

278 layered pseudo-1D material family-monoclinic gallium telluride (GaTe)-is synthesized by physical vapo

279 In the case of liquid gallium, the oxide skin attaches exclusively to a substr

280 We achieved these rates by maximizing the gallium to gallium monochloride conversion efficiency, a

281 a combination of a triazole gold complex and gallium triflate.

282 o characterize the local structure of liquid gallium up to 1.9 GPa.

283 we determine the global supply potential for gallium up to 2050 based on scenarios for the global alu

284 ttributed to the higher electronegativity of gallium versus aluminum.

285 the interfacial tension of a liquid alloy of gallium via electrochemical deposition (or removal) of t

286 We estimated that gallium was produced from 8 to 21% of alumina plants in

287 eaturing double bonds between phosphorus and gallium were synthesized by reaction of (phosphanyl)phos

288 ering internal diameters of the two types of gallium wheels, single-file diffusion occurs in the Ga(1

289 ect; antimony catalyzes the incorporation of gallium, which is found in high concentration at the jun

290 ious research, the local structure of liquid gallium within this domain was suggested a mixture of tw

291 wo-step synthesis: first an intercalation of gallium yielding Mo(2)Ga(2)C:Co followed by removal of G

292 gle-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.

293 Bottom contact, staggered-electrode indium gallium zinc oxide transistors with a 3 nm Al(2) O(3) la

294 ly robust and ultraflexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs)

295 g technique, including semiconducting indium-gallium-zinc oxide (IGZO) and copper oxide, as well as c

296 re Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible pla

297 Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the

298 of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achieve larg

299 of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers hig

300 nsor structure consisting of an IGZO (Indium-Gallium-Zinc-Oxide) TFT (thin film transistor) and an ex