ライフサイエンスコーパス: gallium arsenide

1 technologically important materials (such as gallium arsenide).

2 x-ray scattering (TRXS) on bulk crystalline gallium arsenide.

3 iple Bragg reflections in laser-excited bulk gallium arsenide.

4 weakly spin-orbit-coupled materials such as gallium arsenide.

5 ifferent semiconductor surfaces: silicon and gallium arsenide.

6 ic fields experienced by electrons in n-type gallium arsenide.

7 au-quantized two-dimensional electron gas in gallium arsenide.

8 conduction bands in silicon, germanium, and gallium arsenide.

9 sition charged arsenic (As) vacancies in the gallium arsenide 110 [GaAs(110)] surface with atomic pre

10 A diode laser (aluminum-gallium-arsenide, 660 nm) was applied to test sites imme

11 onic generation from a thin film of aluminum gallium arsenide, a material platform widely spread for

12 tunnel conductance that was fabricated in a gallium arsenide-aluminum gallium arsenide heterostructu

13 ve the two-dimensional electron gas inside a gallium arsenide/aluminum gallium arsenide nanostructure

14 The semiconductor materials include silicon, gallium arsenide and gallium nitride, co-integrated with

15 ctor heterostructures of germanium, silicon, gallium arsenide and gallium phosphide.

16 temporally resolve spin dynamics in strained gallium arsenide and indium gallium arsenide epitaxial l

17 C) of X-rays to long wavelength radiation in gallium arsenide and lithium niobate crystals, with effi

18 ium will increase to 50% due to increases in gallium arsenide and permanent magnet sub-technologies.

19 Measurements of unstrained gallium arsenide and strained indium gallium arsenide sa

20 Single electron spins in gallium arsenide are a leading candidate among implement

21 Bloch wavefunctions of two types of hole in gallium arsenide at wavelengths much longer than the spa

22 unting (TCSPC) that is well suited to indium gallium arsenide avalanche photodiode (APD) detectors op

23 oday, gallium nitride-, silicon-, and indium gallium arsenide--based detectors are used for different

24 A series of gallium arsenide bismide device layers covering a range

25 e results also show how the growth mode of a gallium arsenide bismide layer can be inferred ex-situ f

26 rical spin injection and accumulation in the gallium arsenide channel of lateral spin-transport devic

27 gh-purity two-dimensional electron fluids in gallium arsenide devices.

28 mics in strained gallium arsenide and indium gallium arsenide epitaxial layers.

29 terial platform consisting of a 50 nm indium gallium arsenide epitaxial semiconductor film in direct

30 Notably, the BFO/gallium arsenide FTJ exhibits superior fatigue resistanc

31 e enhanced fatigue-resistant behavior in BFO/gallium arsenide FTJ is due to gallium arsenide's weak o

32 We report gallium arsenide (GaAs) growth rates exceeding 300 um h(

33 Gallium arsenide (GaAs) is a semiconductor utilized in t

34 Here we image gallium arsenide (GaAs) nanowires during growth as they

35 Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon

36 ation spectrum of a single, naturally formed gallium arsenide (GaAs) quantum dot have been measured w

37 dy correlations among electrons and holes in gallium arsenide (GaAs) quantum wells.

38 We present data from an induced gallium arsenide (GaAs) quantum wire that exhibits an ad

39 abrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technolo

40 ed on an electrically thin high-permittivity gallium arsenide (GaAs) substrate layer.

41 t ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory

42 ance antenna-on-chip (AoC) is implemented on gallium arsenide (GaAs) wafer based on the substrate int

43 lthough semiconductors such as silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) hav

44 For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in th

45 -group V semiconductors, including colloidal gallium arsenide (GaAs), still cannot be synthesized wit

46 Germanium (Ge) and Gallium Arsenide (GaAs), with their high carrier mobilit

47 Here we report the electrically driven gallium arsenide (GaAs)-based laser diodes fully fabrica

48 The compound semiconductor gallium-arsenide (GaAs) provides an ultra-clean platform

49 A flat epitaxial silver film on a gallium arsenide [GaAs(110)] surface was synthesized in

50 On flat gallium arsenide [GaAs(110)] terraces, the injection eff

51 ires with indirect (silicon, Si) and direct (gallium arsenide, GaAs) bandgap semiconducting nanowires

52 Commercially available aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) double h

53 ) demonstrates that heat-carrying phonons in gallium arsenide have a much wider mean-free path spectr

54 as fabricated in a gallium arsenide-aluminum gallium arsenide heterostructure.

55 igh-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of hig

56 the liquid helium temperature, based on the gallium arsenide homojunction interfacial workfunction i

57 , limited by hyperfine interactions with the gallium arsenide host nuclei.

58 High-temperature annealing of gallium arsenide in vacuum causes excess evaporation of

59 The lattice matched Indium Gallium Arsenide (In0.53Ga0.47As) is identified as a bet

60 al gadolinium oxide dielectric thin films on gallium arsenide is reported.

61 The laser used was a gallium arsenide laser with 4 infrared laser emitters an

62 nd sometimes potentially toxic (for example, gallium arsenide) materials.

63 layers were observed in the gadolinium oxide-gallium arsenide metal oxide semiconductor diodes, using

64 Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireles

65 materials of high refractive index (such as gallium arsenide, n = 3.69), which unfortunately leads t

66 able metasurface consisting of subwavelength gallium arsenide nanoparticles supporting Mie-type reson

67 ctron gas inside a gallium arsenide/aluminum gallium arsenide nanostructure allows the coherent elect

68 dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparti

69 operties of silicon carbide nanoclusters and gallium arsenide nanowires.

70 rs are continuous-wave laser pumped aluminum gallium arsenide on insulator (AlGaAsOI) nanowaveguides

71 and ribbons of gallium nitride, silicon, and gallium arsenide on separate substrates.

72 efficient and operationally simple aluminium-gallium-arsenide-on-insulator microcomb source to drive

73 uorescence measurement using a 655-nm Indium Gallium Arsenide Phosphide (InGaAsP) based diode laser r

74 erent nonlinear optical response in a single gallium arsenide quantum dot.

75 , consistent with coupling rates obtained in gallium arsenide quantum dots.

76 ole and light-hole excitonic resonances in a gallium arsenide quantum well at low temperature.

77 lets in an electron-hole plasma created in a gallium arsenide quantum well by ultrashort optical puls

78 ant-density two-dimensional hole system in a gallium arsenide quantum well revealed that the metallic

79 of a few hundred manganese ions in a single gallium arsenide quantum well.

80 rations of spin of electron double layers in gallium arsenide quantum wells at even-integer quantum H

81 ect observations of high-order coherences in gallium arsenide quantum wells, achieved using two-dimen

82 At present, gallium arsenide represents the most efficient photoanod

83 havior in BFO/gallium arsenide FTJ is due to gallium arsenide's weak oxygen affinity, resulting in fe

84 trained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spi

85 rent electron spin dynamics in a neighboring gallium arsenide semiconductor.

86 Methods: Indium-gallium-arsenide sensors and SWIR lenses were mounted on

87 rol and readout of single manganese spins in gallium arsenide should be possible.

88 an elegant cut pattern is made in thin-film gallium arsenide solar cells, which are then stretched t

89 rface smooth, leading to direct reuse of the gallium arsenide substrate.

90 s the separation of III-V device layers from gallium arsenide substrates and has been extensively exp

91 (110)-oriented in single domain on the (100) gallium arsenide surface.

92 particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of

93 In direct-gap semiconductors such as gallium arsenide, the exciton lifetime is too short for

94 In addition to showing full wafer gallium arsenide thin film transfer onto both rigid and

95 servation periods of up to 24 h, diamond and gallium arsenide thin-film waveguide laser spectroscopy

96 e laser spectroscopy coupled with diamond or gallium arsenide thin-film waveguides is a novel analyti

97 y to grow thin single-crystal oxide films on gallium arsenide with a low interfacial density of state