ライフサイエンスコーパス: germanium

1 rnative method for protein immobilization on germanium.

2 horus lone pair into the vacant p-orbital at germanium.

3 nits are held coplanar by a bridging dialkyl germanium.

4 metal rings and covered with a thin film of germanium.

5 to investigating the high-mobility material germanium.

6 es were almost exclusively manufactured from germanium.

7 y high amplification noise characteristic of germanium.

8 successful vitrification of metallic liquid germanium.

9 native mechanisms for the nucleosynthesis of germanium.

10 ectronic partial substitution of silicon for germanium.

11 owth of the molten phase in shock-compressed germanium.

12 ad of the residual lone pair of electrons at germanium.

13 random semiconductor alloys such as silicon germanium.

14 e films on non-insulating substrates such as germanium.

15 lms on sapphire, silicon dioxide/silicon and germanium.

16 e electronic transport along the anisotropic germanium (001) surface with the use of two-probe scanni

17 mprehensive study of arsine (AsH(3) ) on the germanium (001) surface.

18 degrees C and 1 atm) was demonstrated using germanium 2,6-dibutylphenoxide, Ge(DBP)2 (1), as the pre

19 The radioactivity concentration on germanium 68 (68Ge)-based corrected images was regarded

20 minescent dosimetry was used to evaluate the germanium 68/gallium 68 rod sources.

21 Intrinsically germanium-69-labeled super-paramagnetic iron oxide nanop

22 ns on any of the 5 sets of images (PET using germanium AC [GeAC] fused and not fused with CT, PET usi

23 2D IR spectra by using a computer-controlled germanium acoustooptic modulator that overcomes the abov

24 sing an atomically-thin layer of graphene on germanium, after two simple processing steps, we create

25 Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are

26 To model the random silicon germanium alloy we have employed density functional theo

27 ch and germanium-rich regions of the silicon germanium alloy.

28 Silicon germanium alloys are technologically important in microe

29 rical fields on the nanometre scale within a germanium amplification layer can overcome the otherwise

30 Co-oligomerization of 1 and its germanium analogue gives a related tetrameric product 4

31 The first acceptor-free heavier germanium analogue of an acylium ion, [RGe(O)(NHC)(2)]X

32 Germanane (GeH), a germanium analogue of graphane, has recently attracted c

33 germanium atom transfer reaction employing a germanium analogue of the phenyl anion.

34 anic structure directing agents (OSDAs) with germanium and boron atoms in alkaline media has allowed

35 Germanium and compound semiconductors, on the other hand

36 r arrays are dominated by single-crystalline germanium and III-V semiconductors.

37 or synthesizing atomically discrete wires of germanium and present the first conductance measurements

38 the 1930s in addition to the purification of germanium and silicon crystals in the 1940s enabled the

39 Our findings show that germanium and silicon wires are nearly identical in cond

40 guest-free clathrates has only been found in germanium and silicon, although guest-free hydrate clath

41 Both germanium and tin compounds undergo [2+2] cycloaddition

42 howed that bond strength differences between germanium and tin, as well as greater nonbonded electron

43 Both germanium and zinc atoms are homogenously distributed al

44 ant valence and conduction bands in silicon, germanium, and gallium arsenide.

45 for attachment to surfaces such as silicon, germanium, and gold.

46 alt, nickel, rare earth elements, tellurium, germanium, and other materials used in energy production

47 Silicon, germanium, and related alloys, which provide the leading

48 nucleation in supercooled liquid silicon and germanium, and we illustrate the crucial role of free su

49 Trifluorinated germanium anions attracted attention of theoretical chem

50 tion during the crystallization of amorphous germanium antimony telluride (Ge2Sb2Te5).

51 Heterostructures that consist of a germanium antimony telluride matrix and cobalt germanide

52 cations of these materials (particularly the germanium antimony tellurium alloy Ge2Sb2Te5) exploited

53 shed capitalize on the orbital modalities of germanium, apparently imitating the transition-metal fro

54 oys of group IV elements such as silicon and germanium are attractive candidates for use as anodes in

55 reaction, and results comparing silicon and germanium are discussed.

56 ewly introduced two-dimensional (2D) layered germanium arsenide (GeAs) has attracted growing interest

57 random semiconductor alloys such as silicon germanium as compared to elementary semiconductors (for

58 ites via introduction of boron, aluminum, or germanium as substituting tetrahedral framework atoms fo

59 Fundamental research on germanium as the central element in compounds for bond a

60 By using highly doped germanium as the source and atomically thin molybdenum d

61 predicted the existence of both gallium and germanium as well.

62 Such materials include silicon and germanium at very low temperature (<100 K) and, at room

63 on between the lone pair of electrons on the germanium atom and the C-N pi* orbital of the isocyanide

64 amantylazide abstracts at room temperature a germanium atom from the digermavinylidene and a tetramer

65 e first isolable Ge(0) complex with a single germanium atom stabilized by a dicarbene.

66 d tetrameric product 4 containing low-valent germanium atom stabilized by binding with the partial ca

67 Here, we report a germanium atom transfer reaction employing a germanium a

68 nning tunneling microscopy, it is shown that germanium atoms adsorbed on the (100) surface of silicon

69 a simple and efficient method for replacing germanium atoms in deltahedral Ge(9)(4-) clusters with S

70 that silicon can be successfully replaced by germanium atoms in the synthesis of imogolite nanotubes,

71 t-efficient commercial available silicon and germanium ATR crystals prepared from double-sided polish

72 A hemispherical germanium ATR element used with p-polarized light at 65

73 Although germanium avalanche photodetectors (APD) using charge am

74 uantitative differences between CT-based and germanium-based attenuation-corrected PET images.

75 tration values significantly higher than the germanium-based corrected values.

76 on intensity in the mesoporous intermetallic germanium-based frameworks can be selectively suppressed

77 a review of the current state-of-the-art in germanium-based materials design, synthesis, processing,

78 We synthesize carbon-, silicon-, and germanium-based molecular wires terminated by aurophilic

79 Germanium-based nanomaterials have emerged as important

80 actant-directed assembly of mesoporous metal/germanium-based semiconducting materials from coupling o

81 Germanium-based transistors have the potential to operat

82 egions, which rely so heavily on silicon and germanium, begin to resemble ornate molecules rather tha

83 increasing the germanium-germanium and metal-germanium bond orders while reducing the metal-Cp(ttt) b

84 in the silicon photonic process are based on germanium, but this requires additional germanium growth

85 embly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D)

86 e, we consider wafer-scale graphene grown on germanium by chemical vapor deposition with non-uniformi

87 ion exhibits a pentagonal prismatic 10-atom germanium cage with an interstitial iron atom in the cen

88 The amplified material gain in strained germanium can sufficiently overcome optical losses at 83

89 lly relevant semiconductor surfaces, such as germanium, carbon, and others.

90 The two-coordinate germanium cation [(IDipp){(Me3Si)2CH}Ge:](+) has been sy

91 ccessfully prepared via the reduction of the germanium cation [dimNHCGeCl](+) with KC(8).

92 the magnetic Weyl semimetal cerium-aluminum-germanium (CeAlGe) system in the form of singular angula

93 A nearly square-planar germanium center embedded in a tetra-amido macrocyclic l

94 hile in the case of cyclic 6b the low-valent germanium center requires a considerable thermal activat

95 ly periodic hexagonal honeycombs of platinum-germanium chalcogenide and platinum-tin selenide framewo

96 pounds, emphasizing technologically relevant germanium chalcogenides that include GeS, GeSe, and GeTe

97 A new series of germanium chalcophosphates with the formula A(4)GeP(4)Q(

98 r assembly kinetics are observed on graphene/germanium chemical patterns than on conventional chemica

99 ene were obtained by reduction of the parent germanium chlorides with NaBH(4) and LiBH(4), respective

100 of Pd(PPh3 ) into the tetrasubstituted nona-germanium cluster [(Me3 Si)Si]3 EtGe9 through a reaction

101 tures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 </= n </= 12.

102 tal and theoretical study of ruthenium doped germanium clusters, RuGen(-) (n = 3-12), and their corre

103 city is another way to stabilize silicon and germanium clusters.

104 and electronic structures of ruthenium doped germanium clusters.

105 and electronic properties of ruthenium doped germanium clusters.

106 The first zerovalent germanium complex ("germylone") 3, [Si(II)(Xant)Si(II)]G

107 The germanium complex of the more electron-withdrawing tetra

108 rent morphologies, the first being a silicon-germanium compositionally segregated Janus particle orie

109 -selective saturated carbo- and heterocyclic germanium compounds (3D framework) is reported via the h

110 we discuss the colloidal synthesis of other germanium-containing compounds, emphasizing technologica

111 alogues with amido substituents, and heavier germanium-containing systems Ge4R4 (potential precursors

112 In developing the protocol, germanium-containing UTL zeolites were subjected to hydr

113 r fragment contains a rare formal zerovalent germanium core and a peculiar bonding mode of sp(2)-Ge@(

114 and-offsets drive hole injection into either germanium core or shell regions.

115 Here we synthesize silicon and germanium core-shell and multishell nanowire heterostruc

116 of crystalline germanium-silicon and silicon-germanium core-shell structures, in which band-offsets d

117 ues are generally comparable between CT- and germanium-corrected emission PET images, CT-based attenu

118 er radioactive concentration values than did germanium-corrected images (P < 0.01) for all lesions an

119 5.2% higher for CT-corrected images than for germanium-corrected images.

120 dies using a custom-designed impactor with a germanium crystal as the impaction surface to study SOA

121 Here we use very small germanium crystals as a new type of nanomechanical stres

122 semiconductor detectors based on high-purity germanium crystals with extremely low-energy thresholds

123 Its two Ge9-halves are the first examples of germanium deltahedra with three nonsilyl substituents, t

124 lear reaction under study with a high-purity germanium detector.

125 measuring prostate specimens (n = 8) with a germanium detector.

126 lenge for nuclear detection with high-purity germanium detectors is given by the strong electromagnet

127 ne-phosphine Lewis pair (1) was reacted with germanium dichloride to give in 92% yield a phosphine ad

128 Germanium dioxide in the presence of 5% KOH reacted with

129 s about an order of magnitude higher for the germanium dioxide.

130 ace was used to deposit DOM fractions onto a germanium disk that were then analyzed by FTIR.

131 The atomic structure of a germanium doped phosphorous selenide glass of compositio

132 ium ion to the first solely donor-stabilized germanium ester [(NHC)RGe(O)(OSiPh(3))] and correspondin

133 based on bilayer n-MoS2 and heavily doped p-germanium, etc.

134 infrared radiation than dielectrics such as germanium, even when the arrays are over 75% metal by vo

135 Germanium fits these requirements and has been proposed

136 sent a universal immobilization technique on germanium for all oligo-histidine-tagged proteins.

137 ty of functionalization against oxidation of germanium for various alkyl chain lengths is elucidated

138 ifically, we examined the use of high-purity germanium gamma spectrometry and isotope dilution alpha

139 interfacial resistance by depositing a thin germanium (Ge) (20 nm) layer on garnet.

140 Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention

141 Germanium (Ge) and Gallium Arsenide (GaAs), with their h

142 Germanium (Ge) colloidal quantum dots (CQDs) were synthe

143 Germanium (Ge) is an attractive material for Silicon (Si

144 We examined the evolution of a germanium (Ge) nanowire attached to a gold (Au) nanocrys

145 ctrically active dopants in silicon (Si) and germanium (Ge) nanowires (NWs) prepared by nanocluster c

146 Deposition of epitaxial germanium (Ge) thin films on silicon (Si) wafers has bee

147 In this work, Mg was microalloyed with germanium (Ge), with the aim of improving corrosion resi

148 A simple solution synthesis of germanium (Ge0) nanowires under mild conditions (<400 de

149 2)} bonds, with the reduction increasing the germanium-germanium and metal-germanium bond orders whil

150 We apply it to germanium, gold and magnesium oxide particles, and achie

151 versality of this effect, including silicon, germanium, gold, glasses, silk, polystyrene, biodegradab

152 d on germanium, but this requires additional germanium growth, which increases the system cost.

153 y of a series of lead-free and mixed tin and germanium halide perovskite materials.

154 Germanium has emerged as an exceptionally promising mate

155 Although other Group-14 elements silicon and germanium have complementary crystalline and amorphous f

156 ntal main group materials (i.e., silicon and germanium) have dominated the field of modern electronic

157 llected using a high efficiency, high purity germanium (HPGe) detector.

158 tion in a hole-based double quantum dot in a germanium hut wire (GHW).

159 on of alpha-halo carbonyl compounds by these germanium hydrides occurs with moderate ee values (up to

160 We also show that the germanium hydrides, Et(3)GeH and Bu(3)GeH, also reduce D

161 primary alkyl radical were measured for both germanium hydrides.

162 ed, monodisperse (3.3 nm diameter), aluminum-germanium-hydroxide ("aluminogermanate") nanotubes in aq

163 s of heavier low-valent group 14 elements of germanium(II) and tin(II) by using the substituted Schif

164 That is, the bulky, two-coordinate germanium(II) and tin(II) hydride complexes, L(dagger)(H

165 In vapour-liquid-solid growth, nanowires of germanium(II) sulfide, an anisotropic layered semiconduc

166 complexes containing indium(i), gallium(i), germanium(ii), and even silicon(ii).

167 ent-copper in brake pads, zinc in tires, and germanium in retained catalyst applications being exampl

168 e second being a sphere made of dendrites of germanium in silicon.

169 minor metals systems: rhenium, gallium, and germanium in the United States in 2012.

170 Economic introduction of germanium into this linker is accomplished by insertion

171 thermal and ultrafast nonthermal melting of germanium, involving passage through nonequilibrium extr

172 Diamond-cubic germanium is a well-known semiconductor, although other

173 Germanium is an extremely important material used for nu

174 strength are particularly surprising because germanium is an indirect gap semiconductor; such semicon

175 or SiO(2); however, the rate of reaction for germanium is much higher than that of the corresponding

176 c fields, the region of impact ionization in germanium is reduced to just 30 nm, allowing the device

177 Germanium is routinely integrated with silicon in electr

178 h refractive index and broad spectral window germanium is the best material for ATR-FT-IR spectroscop

179 and CT on PET/CT studies when CT instead of germanium is used for attenuation correction (AC).

180 terials such as diamond carbon, silicon, and germanium is well understood, there is a gap in knowledg

181 nstrate the lateral growth of single crystal germanium islands tens of micrometres in diameter by see

182 shed by insertion of dichlorogermylene [from germanium(IV) chloride] into the homobenzylic C-Cl bond

183 w tri-N-methylpyridyl corrole (TMPC) and its germanium(IV) derivative (GeTMPC), with single- and doub

184 this configuration, including square-planar germanium(IV), remain unexplored.

185 of 4(*) with GeCl2.dioxane gives an anionic germanium(IV)-bis(dithiolene) complex (5).

186 w excess noise has been demonstrated using a germanium layer only for detection of light signals, wit

187 Here we demonstrate highly luminescent germanium-lead (Ge-Pb) perovskite films with photolumine

188 micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes.

189 maging system, incorporating anti-reflection germanium lenses.

190 ple bond are activated for the first time by germanium-ligand cooperativity.

191 ectroscopy in the extreme ultraviolet at the germanium M4,5 edge.

192 ert-butyl isocyanide on the (100) surface of germanium, measured using Fourier transform infrared spe

193 ere, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and si

194 oidal synthesis of size and shape-controlled germanium nanomaterials.

195 Germanium nanoparticles have excited scientists and engi

196 lity from core-shell structure consisting of germanium nanorods embedded in multiwall carbon nanotube

197 We also show that the strain in the germanium nanostructures can be tuned to 5.3% by alterin

198 y shows a high density of single-crystalline germanium nanostructures coherently embedded in InAlAs w

199 reveals a 3.8% biaxial tensile strain in the germanium nanostructures.

200 s is illustrated with a series of individual germanium nanowire photodetectors.

201 shold, compact group IV laser that employs a germanium nanowire under a 1.6% uniaxial tensile strain

202 f periodically repeating bismuth-nanocrystal/germanium-nanowire junctions.

203 Germanium nanowires (GeNWs) with p- and n-dopants were s

204 s of micrometres in diameter by seeding from germanium nanowires grown on a silicon substrate.

205 paid to the unique structural properties of germanium nanowires obtained by epitaxial and heteroepit

206 lso include a case study of gold contacts to germanium nanowires to illustrate these concepts.

207 report the synthesis of single-crystal iron germanium nanowires via chemical vapor deposition withou

208 tities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9

209 2)O(5), Cu(2)O, NiO, Fe(2)O(3)), silicon and germanium nanowires, and group III-V or II-VI based 1D s

210 Germanium nanowires, ranging from 10 to 150 nm in diamet

211 ilitating tip-to-tail "nanosoldering" of the germanium nanowires.

212 ) low-resistivity (10(-4)Omega .cm) metallic germanium of precisely defined thickness, beyond the cap

213 n CMOS-compatible interfaces of few-nm thick germanium on silicon carbide.

214 es, despite the fact that the integration of germanium on silicon is attractive for device applicatio

215 High quality single crystal silicon-germanium-on-insulator has the potential to facilitate t

216 brication of multiple single crystal silicon-germanium-on-insulator layers of different compositions,

217 we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant com

218 Here we show a new generation of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche

219 Chemical vapor deposition of germanium onto the silicon (001) surface at atmospheric

220 Here six crystalline high-germanium or high-tin zeolite-type sulfides and selenide

221 of this compound where tin is substituted by germanium or silicon and find that the latter may achiev

222 In indirect-gap semiconductors such as germanium or silicon, a thermodynamic phase transition m

223 culations show that alkaline-earth-metal and germanium orbitals, particularly the d orbitals on the c

224 addition, we have studied amorphous silicon germanium oxide (Si(x)Ge(y)O(1-x-y)) as an IR sensitive

225 el hermetic detector composed of 200 bismuth germanium oxide crystal scintillators and 393 channel si

226 Among the various Discovery bismuth germanium oxide-based PET/CT scanners, the IQ with 5-rin

227 duct affords the first example of a terminal germanium oxido dianion, [GeO](2-), which can also be se

228 racterization of the title anion which has a germanium/palladium cluster core of [Ge18Pd3] and six tr

229 We first produce an array of silicon-germanium particles embedded in silica, through capillar

230 Reaction of 1 with an excess of N(2)O gave a germanium peroxo species Ar'(HO)Ge(mu2-O)(mu2:eta2-O2)Ge

231 phase matching of the nonlinear crystal Zinc Germanium Phosphide (ZGP) in a narrowband-pumped optical

232 have been suggested based on boron, silicon, germanium, phosphorus, tin, and metal di-chalcogenides.

233 laser, a silicon microdisk modulator, and a germanium photodetector integrated on a single chip.

234 A germanium photodetector that can be monolithically integ

235 nanometer distances from a room-temperature germanium photodetector to form a thermo-photovoltaic ce

236 This semiconductive mesoporous form of germanium possesses hexagonal pore ordering with very hi

237 ry of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon.

238 t example of an aromatic-to-aromatic nuclear germanium replacement reaction on the germabenzene ring.

239 be a novel kind of porous materials based on germanium-rich chalcogenide networks and 'soft' highly p

240 will behave differently is silicon-rich and germanium-rich regions of the silicon germanium alloy.

241 Germanium-rich UTL was subjected to hydrolysis condition

242 Critical exposition on the germanium's frontier orbitals participations evokes the

243 Both CT and germanium scans were used to correct PET emission data.

244 However, silicon and germanium segregate unevenly during non-equilibrium soli

245 e demonstrated the synthesis of a mesoporous germanium semiconductor using liquid-crystals-templated

246 lly and technologically important as silicon germanium (Si(1 - x)Ge(x)) is a mainstream nanoelectroni

247 Silicon-germanium (Si(1-x)Ge(x)) has become a material of great

248 compositionally abrupt interfaces in silicon-germanium (Si-Ge) and Si-SiGe heterostructure nanowires

249 cattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have v

250 Silicon germanium (SiGe) is a multifunctional material considere

251 e high-cost germanium substrate with silicon-germanium (SiGe) on Si.

252 atial mapping of phonons in a single silicon-germanium (SiGe) quantum dot (QD) using monochromated el

253 ., magnesium, molybdenum, tungsten, silicon, germanium, silicon dioxide, silicon nitride, silk and sy

254 controlled semiconductor heterostructures of germanium, silicon, gallium arsenide and gallium phosphi

255 ity of heteroepitaxial growth of crystalline germanium-silicon and silicon-germanium core-shell struc

256 from pyramids to domes during the growth of germanium-silicon islands on silicon (001).

257 Germanium/Silicon (Ge/Si) APDs have been preferred for a

258 1D hole gas system based on a free-standing germanium/silicon (Ge/Si) core/shell nanowire heterostru

259 y n-type indium arsenide (n-InAs) and p-type germanium/silicon core/shell (p-Ge/Si) nanowire (NW) fie

260 distinct signatures of the two processes in germanium/silicon ratios.

261 sion hole-doped regions within a silicon (or germanium) single crystal.

262 d by the partial occupation of aluminum on a germanium site.

263 of next-generation environmentally friendly germanium solar cells, and near-to-mid infrared (1.8-2.0

264 engthening of the Ge-Ge bonds in the case of germanium species 3 and 4 and a greater lengthening (ca.

265 ough of 62Zn was undetectable by high-purity germanium spectroscopy for all units.

266 In silicon and silicon-germanium, strain provides a mechanism for control of bo

267 silicon in electronics, but previous silicon-germanium structures have also not shown strong modulati

268 olar cells if we could replace the high-cost germanium substrate with silicon-germanium (SiGe) on Si.

269 The in-plane germanium sulfide crystal axes progressively rotate alon

270 um sulfide solutions leads to a thick glassy germanium sulfide layer.

271 xes progressively rotate along the wire, and germanium sulfide layers in adjacent turns of the helix

272 th's surface, the semiconductors silicon and germanium superconduct.

273 Here, the germanium surface was functionalized with thiols and ste

274 The reactivity of silicon and germanium surfaces modified with ethylamine (CH(3)CH(2)N

275 periments consistently show that cubic phase germanium telluride (GeTe) has an unexpected increase in

276 Germanium telluride (GeTe) is both polar and metallic, a

277 of an antimony telluride (Sb2Te3) core and a germanium telluride (GeTe) shell, as well as an improved

278 Germanium telluride (GeTe), with its unique crystal and

279 Pb-free germanium telluride (GeTe)-based material has recently a

280 etal thio/selenophosphates, chromium silicon/germanium tellurides, and more, are introduced.

281 Germanium Tin (GeSn) films have drawn great interest for

282 Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexi

283 s with double and triple bonds with silicon, germanium, tin and lead had considerable impact on moder

284 compounds of silylene 1 and for its heavier germanium, tin, and lead homologues uniformly electronic

285 carbon's heavier-element congeners silicon, germanium, tin, or lead has been little explored.

286 h-silica-zeolite-like chalcogenides based on germanium/tin remained unknown, even after decades of re

287 Here, we use native germanium to demonstrate the first high-quality microres

288 l migration of the H, Me, and Ph groups from germanium to the carbene ligand.

289 e of the lead-free, all-inorganic cesium tin-germanium triiodide (CsSn(0.5)Ge(0.5)I(3)) solid-solutio

290 We propose that germanium undergoes amorphization above a threshold stre

291 first conductance measurements of molecular germanium using a scanning tunneling microscope-based br

292 newidths of 54 megahertz (146 megahertz) for germanium-vacancy (silicon-vacancy) emitters, close to t

293 realize a 128-channel, defect-free array of germanium-vacancy and silicon-vacancy colour centres in

294 lters are transferred to polished silicon or germanium wafers with electrostatically assisted high-sp

295 gy for the attachment of triethoxysilanes on germanium was established, and the surface was character

296 d million atmospheres, or 33 gigapascals) to germanium, we report here a complex gradient nanostructu

297 Highly strained germanium with its fundamentally altered bandstructure h

298 actions of nine-atom deltahedral clusters of germanium with Ni(COD)2 and/or Ni(PPh3)2(CO)2 in ethylen

299 Herein, we report the synthesis of germanium-zinc alloy nanofibers through electrospinning

300 actions of nine-atom deltahedral clusters of germanium (Zintl ions, Ge(9)(n-)) with alkynes and alkyl