ライフサイエンスコーパス: indium

1 activation of distinct molecular pathways by indium.

2 riaminepentaacetic acid [DTPA]-gadolinium or indium 111-bis-5-HT-DTPA, respectively).

3 rmed 48 h and 72 h after injecting with (111)Indium ((111)In) labeled PEG-HVGGSSV or PEG-control pept

4 ator for subsequent radiolabelling with (111)Indium ([(111)In]In(3+)), in a manner designed to be com

5 nal antibody PD-L1.3.1 was radiolabeled with Indium-111 ((111)In) and characterized using PD-L1-expre

6 D-L1 antibody conjugated to the radionuclide Indium-111 ((111)In) for imaging and biodistribution stu

7 ith the Auger electron-emitting radionuclide indium-111 ((111)In).

8 2R affinity, and the conjugates labeled with indium-111 and lutetium-177 showed a high enzymatic stab

9 Most absorbed indium accumulated at the roots, with only a tiny portio

10 ting the metal precursors (copper iodide and indium acetate) in dodecanethiol (DDT).

11 electronic devices based on eutectic gallium-indium alloy (EGaIn) using a hybrid method utilizing ele

12 nanopipette tip immersed in a liquid gallium/indium alloy electrode, which not only protects the ultr

13 tional groups, and EGaIn is eutectic gallium-indium alloy.

14 tungsten diselenide (WSe(2)) contacted with indium alloy.

15 with fairly well-known modes of actions and indium, an understudied emerging contaminant from electr

16 ately volatile elements (such as lead, zinc, indium and alkali elements) relative to CI chondrites, t

17 Indium and cadmium play different but complementary role

18 lectron microscopy imaging, we show that the indium and gold layers form a solid solution after annea

19 Indium and indium tin oxide (ITO) are extensively used i

20 r-Waals-type bonding between the gold-capped indium and monolayer MoS(2).

21 o-aldol-aldol-hemiacetal-reaction cascade of indium and other group 13 metal enolates furnished 6-deo

22 ly robust monomeric MX2 radicals of gallium, indium and thallium.

23 d that the interface between the gold-capped indium and the MoS(2) is atomically sharp with no detect

24 obeads encoded with seven elements (yttrium, indium, and bismuth in addition to the four lanthanides)

25 ong others, specialty metals (e.g., gallium, indium, and thallium) and some heavy rare earth elements

26 ntified the likely phases as alloys of lead, indium, and tin.

27 Indium antimonide (InSb) two-dimensional electron gases

28 quantum dots are defined by gate voltages in indium antimonide nanowires.

29 n geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acous

30 ve investigation of the kinetics that govern indium arsenide nanocrystal growth.

31 ment of the Josephson radiation frequency in indium arsenide nanowires with epitaxial aluminium shell

32 ns based on short-wavelength infrared light, indium arsenide quantum dots are promising candidates to

33 ese insights, we design a synthesis of large indium arsenide quantum dots with narrow emission linewi

34 We further synthesize indium arsenide-based core-shell-shell nanocrystals with

35 ty of III-V QDs such as indium phosphide and indium arsenide.

36 a heterostructure consisting of aluminium on indium arsenide.

37 We overcome this difficulty by utilizing indium as a metal flux to synthesize large (millimeter s

38 , water, or ethanol), has been prepared with indium as the metal center.

39 d sections embedded not only in epoxy but in indium as well.

40 esolution measurements of transitions in the indium atom from the [Formula: see text] and [Formula: s

41 re-evaluate the ionization potential of the indium atom to be [Formula: see text].

42 er chemical system and constructed the first indium-based alb-MOF, In-alb-MOF, by employing trinuclea

43 scenario, because high soil acidity promotes indium bioavailability.

44 Reduction of indium boryl precursors to give two- and three-dimension

45 -based readout integrated circuits (ROIC) by indium bump bonding which significantly increases the fa

46 A homogeneous rhodium-indium catalyst hydrodefluorinates substrates bearing st

47 Furthermore, the phosphasalen indium catalysts do not require any chiral additives.

48 Here, phosphasalen indium catalysts feature high rates (30+/-3 m(-1) min(-1

49 gy for the accurate regulation of main-group indium catalysts for CO(2) reduction at atomic scale.

50 barrier of the key step of the gallium- and indium-catalyzed cycloisomerization of 1,6-enynes is rev

51 esis of diketopiperazinoindolines through an indium-catalyzed intramolecular 5-exo-dig cyclization of

52 Indium coatings also undergo reversible alloying reactio

53 wn to vary with indium content, with the 50% indium composite having an external quantum efficiency o

54 ntum wells, which indeed can be tuned by the indium composition, suggest that the Nb-In0.75 Ga0.25 As

55 continually introduced to the workplace (eg, indium compounds and vicinal diketones).

56 l, including acidic soils spiked with a high indium concentration (1.0 mmol kg(-1)), which is conside

57 tion of rice and wheat grains harvested from indium-contaminated soils may pose an insignificant risk

58 sks associated with consuming crops grown in indium-contaminated soils.

59 When the indium content (and correspondingly, wavelength) increas

60 n order to investigate the influence of both indium content and injection current on polarization pro

61 Variation of the indium content in the composite films leads to a dramati

62 However, with increasing indium content, this periodic behavior in both emission

63 rochemical properties are shown to vary with indium content, with the 50% indium composite having an

64 composed of a liquid-phase eutectic gallium-indium core and a thiolated polymeric shell.

65 In the present work, the history of indium deposition from the atmosphere is reconstructed f

66 Using indium-doped cadmium oxide (ICO) as an example, we show

67 e ITO inks are reducing the volume of wasted indium during thin film patterning.

68 n oxide layer that forms on eutectic gallium indium (EGaIn) in a controlled reproducible manner.

69 Eutectic gallium indium (EGaIn) is a liquid metal alloy at room temperatu

70 UV plasmonic resonances of eutectic gallium-indium (EGaIn) liquid-metal alloy nanoparticles suspende

71 assemble, align, and sinter eutectic gallium indium (EGaIn) microdroplets in uncured poly(dimethylsil

72 lled with liquid conductor (eutectic gallium indium, EGaIn), and fabricated using a simple roller coa

73 nds has been grown as single crystals via an indium flux.

74 easing market price and limited resources of indium for indium tin oxide (ITO) materials currently ap

75 erent nanofiltration membranes of extracting indium from copper-indium-gallium- selenide photovoltaic

76 Due to the low translocation of indium from soil to grain, the consumption of rice and w

77 hosphoric acid (D2EHPA) extracted 97% of the indium from the retentates, separating it from all other

78 The lattice matched Indium Gallium Arsenide (In0.53Ga0.47As) is identified a

79 oton counting (TCSPC) that is well suited to indium gallium arsenide avalanche photodiode (APD) detec

80 aser fluorescence measurement using a 655-nm Indium Gallium Arsenide Phosphide (InGaAsP) based diode

81 graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itse

82 Based on experimental permittivity data for indium gallium nitride, we have shown that between 75%-9

83 ctron mobility of aqueous solution-processed indium gallium oxide (IGO) thin-film transistors (TFTs)

84 work we examine the structural evolution of indium gallium oxide gel-derived powders and thin films

85 In particular, indium gallium oxide has garnered attention as a thin-fi

86 ctor compounds such as CdTe and CIGS (copper indium gallium selenide) used in solar cells in just abo

87 ing single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.

88 Bottom contact, staggered-electrode indium gallium zinc oxide transistors with a 3 nm Al(2)

89 lymer composite emissive layer, and eutectic indium-gallium as the cathode.

90 film sandwiched between indium tin oxide and indium-gallium eutectic alloy exhibit a low turn-on volt

91 sed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).

92 n membranes of extracting indium from copper-indium-gallium- selenide photovoltaic cell (CIGS) leacha

93 ll highly robust and ultraflexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors

94 spinning technique, including semiconducting indium-gallium-zinc oxide (IGZO) and copper oxide, as we

95 Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexi

96 Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating

97 a biosensor structure consisting of an IGZO (Indium-Gallium-Zinc-Oxide) TFT (thin film transistor) an

98 The contact resistance of the indium/gold electrodes is 3,000 +/- 300 ohm micrometres

99 s, common metals, such as gold, platinum and indium, have been used as electrodes for fabricating the

100 renes and alkenes using a univalent cationic indium(I) catalyst is reported.

101 The high compatibility between the cationic indium(I) complex and primary anilines led us to develop

102 d for the generation of complexes containing indium(i), gallium(i), germanium(ii), and even silicon(i

103 tability of the sigma-complexed substrate by indium(III) and that meta-substituents on the phenyl rin

104 from the potassium reduction of a bis(boryl)indium(III) chloride precursor, analogous reduction of t

105 initially developed using gold(I) catalysis, indium(III) proves to be a far superior catalyst in term

106 ted polyether ether ketone in the form of an indium(III) salt.

107 by the nucleobase is minimized by the use of indium(III) triflate as the donor activating reagent; th

108 aromatized acridine-based PNP-Ru complex and indium(III) triflate.

109 tion in moderate to good yields catalyzed by indium(III)triflate [In(OTf)(3)].

110 Slight tin-substitution for indium in CeRhIn5 shifts its antiferromagnetic quantum c

111 The increasing use of indium in high-tech industries has inevitably caused its

112 th's volatiles, notably the overabundance of indium in the silicate Earth.

113 Main-group element indium (In) is a promising electrocatalyst which trigger

114 A sulfonated indium (In) metal organic framework (MOF) is reported wi

115 kely related to the diffusion/segregation of indium (In), have been optically activated by the therma

116 Due to the different efficiencies of indium incorporation on non-polar and semi-polar GaN fac

117 ion, relaxation of internal strain caused by indium incorporation will facilitate pushing the emissio

118 The addition of an allenyl indium intermediate to chiral N-tert-butanesulfinyl imin

119 is explained by differences in soluble free indium ion concentrations.

120 rene units, which are stitched together with indium ions.

121 The metal indium is an example of an increasingly important materi

122 Indium is of foremost interest being widely used, expens

123 , retention of intracoronarily infused, (111)Indium-labeled cells within the heart was closely associ

124 ilicon bottom contact and a eutectic gallium-indium liquid metal (EGaIn) top contact.

125 oach employs a sequence involving an initial indium-mediated allenylation reaction of an arylacyl bro

126 Two consecutive indium-mediated aminoallylations with the appropriate en

127 folds via a three-step sequence including an indium-mediated Ferrier-type reaction.

128 er Waals contacts between 10-nanometre-thick indium metal capped with 100-nanometre-thick gold electr

129 tive wet-treatment with Na2 S transforms two indium metal-organic frameworks (MOFs) into a series of

130 tral range of green to violet by varying the indium mole fraction of the InxGa1-xN MQWs in the range

131 Metallic indium nanocrystals are codispersed with silver nanocrys

132 Here, molecular effects of indium nitrate (In(NO3)3) and ITO nanoparticles were inv

133 -exchange chemistry for creating coatings of indium on lithium.

134 is of zeolite types by reporting a family of indium oxalate salts with multiple zeolite topologies, i

135 re realized by fabricating a homojunction of indium oxide (In(2) O(3) ) and polyethylenimine (PEI)-do

136 n example for a post-transition-metal oxide, indium oxide (In2O3).

137 tate study of pristine and defected forms of indium oxide (In2O3, In2O3-x, In2O3(OH)y and In2O3-x(OH)

138 d interfacial layers (IFLs) on the tin-doped indium oxide (ITO) anodes of organic photovoltaic (OPV)

139 tal-in-glass' composites (that is, tin-doped indium oxide (ITO) nanocrystals embedded in NbOx glass)

140 Tin doped indium oxide (ITO) thin films provide excellent transpar

141 transparent conducting material is tin-doped indium oxide (ITO), a wide-gap oxide whose conductivity

142 gh heavy doping, as in the case of tin-doped indium oxide (ITO).

143 on resonances (LSPRs) in colloidal tin-doped indium oxide (Sn:In2O3, or ITO) nanocrystals.

144 but also for 'opaque' electrodes, tin-doped indium oxide and silver nano-films.

145 lar energy, it would be advantageous to make indium oxide black.

146 Black indium oxide comprises amorphous non-stoichiometric doma

147 pplication of a high-surface-area, tin-doped indium oxide electrode surface-derivatized with a terpyr

148 pecies deposit preferentially onto tin-doped indium oxide instead of carbon during electrochemical ch

149 her prepare carbon nanofibers with tin-doped indium oxide nanoparticles decorating the surface as hyb

150 tally observed enhanced activity of defected indium oxide surfaces for the gas-phase reverse water ga

151 hotoactive behavior of pristine and defected indium oxide surfaces providing fundamental insights int

152 PhotoVoltaics, specifically molybdenum-doped indium oxide, dysprosium-doped cadmium oxide, graphene a

153 defect states within the optical band gap of indium oxide.

154 a degenerate n-type semiconductor (tin-doped indium oxide; ITO) is reported.

155 xy) resistivities of disordered 2D amorphous indium-oxide films to study the magnetic-field tuned sup

156 s, density-graded surface of 'black' gallium indium phosphide (GaInP(2)), when combined with ammonium

157 Herein, we report two indium phosphide (InP) QDs that operate in the near-infr

158 d to study charge transfer at p-type gallium-indium phosphide (p-GaInP2) interfaces critically import

159 control and uniformity of III-V QDs such as indium phosphide and indium arsenide.

160 We also demonstrate gallium indium phosphide growth at rates exceeding 200 um h(-1)

161 ffraction structure of a carboxylate-ligated indium phosphide magic-sized nanocluster at 0.83 A resol

162 nsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon

163 Introduction of indium phosphide photocathodes and titanium dioxide phot

164 and construct sizing curves for cluster-free indium phosphide QDs.

165 s, purification and mass characterization of indium phosphide quantum dot growth mixtures.

166 Indium phosphide quantum dots (QDs) have emerged as a ne

167 error rate, GHz clocked QKD operation of an indium phosphide transmitter chip and a silicon oxynitri

168 Indium precipitates in soils resulted in relatively low

169 The process comprises indium-promoted one-pot carbonyl bis(allenylation) and g

170 d EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating mol

171 of quantitative determination of the sulfur/indium ratio by EDX was assessed by calibration with two

172 he addition of an in situ formed pentadienyl indium reagent to chiral tert-butylsulfinimines, previou

173 by EDX was assessed by calibration with two indium salts (sulfide and sulfate) readily available in

174 This indium-seamed capsule is the first instance of a M(24) L

175 we report the superplastic deformability of indium selenide (InSe).

176 he electronic response of single crystals of indium selenide by means of angle-resolved photoemission

177 cond harmonic signal versus the thickness of Indium Selenide crystals, in contrast to the quadratic i

178 The loss spectrum of indium selenide shows the direct free exciton at 1.3 eV

179 ewis acidic coordinately unsaturated surface indium site proximal to an oxygen vacancy and a Lewis ba

180 ction through coordination to the accessible indium sites.

181 latelets (NPls) from template CuInS2 (copper indium sulfide, CIS) NPls via a cation exchange (CE) rea

182 sed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to

183 0%) than other transparent materials such as indium tin oxide ( approximately 80%) and ultrathin meta

184 rodes made from graphene (at the bottom) and indium tin oxide (at the top) for dielectrophoretic cell

185 duced the electron injection barrier between indium tin oxide (ITO) and C70 by 0.67 eV.

186 rent conductive oxides includes the material indium tin oxide (ITO) and has become a widely used mate

187 ible organic solar cells is proposed without indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophe

188 fabricated by a self-alignment of conducting Indium Tin Oxide (ITO) and rGO layer without etching of

189 h efficiency solar cells, on semitransparent indium tin oxide (ITO) and titanium dioxide (TiO2) elect

190 Indium and indium tin oxide (ITO) are extensively used in electroni

191 sparency, slides coated with a thin layer of indium tin oxide (ITO) are the standard substrate for pr

192 Silver (Ag) metal and indium tin oxide (ITO) are used for the fabrication of t

193 FDH and a H(2)ase immobilized on conductive indium tin oxide (ITO) as an electron relay.

194 In this context, we used optical transparent indium tin oxide (ITO) as electrode material.

195 face and enzyme coated NPs were deposited on indium tin oxide (ITO) coated flexible polyethylene tere

196 ity transparent conductive electrode film of indium tin oxide (ITO) coated on the interface of total

197 oxidase (GOx) was immobilized on a modified indium tin oxide (ITO) coated polyethylene terephthalate

198 electrode show superior efficiency to their indium tin oxide (ITO) counterparts because of improved

199 to understand thin film delamination from an indium tin oxide (ITO) current collector under cyclic lo

200 ration and use of a thin metal film modified Indium Tin Oxide (ITO) electrode as a highly conductive,

201 ing of gold nanoparticle (AuNP) arrays on an indium tin oxide (ITO) electrode using efficient and low

202 defined supported Ru(bda) catalyst on porous indium tin oxide (ITO) electrode.

203 ucture of PVDF nanowires-PDMS composite film/indium tin oxide (ITO) electrode/polarized PVDF film/ITO

204 (QD)-sensitized photocathodes on NiO-coated indium tin oxide (ITO) electrodes and their H2-generatin

205 urface consists of nanostructured silver and indium tin oxide (ITO) electrodes which are separated by

206 ted polymeric films on optically transparent indium tin oxide (ITO) electrodes.

207 eam using a time-varying subwavelength-thick indium tin oxide (ITO) film in its ENZ spectral range.

208 d on Lossy Mode Resonances generated by thin indium tin oxide (ITO) films fabricated onto the planar

209 Thin indium tin oxide (ITO) films have been used as a medium

210 ists of a plano-convex PVC gel micro-lens on Indium Tin Oxide (ITO) glass, confined with an annular e

211 This control is achieved by embedding indium tin oxide (ITO) into these cavities.

212 Whereas indium tin oxide (ITO) is a well-known transparent condu

213 Indium tin oxide (ITO) is one of the most widely used tr

214 Heavily n-doped indium tin oxide (ITO) is used as the semiconductor in t

215 et price and limited resources of indium for indium tin oxide (ITO) materials currently applied in mo

216 Indium tin oxide (ITO) nanoparticles were spray-coated o

217 a new label-free biosensing device based on indium tin oxide (ITO) overlaid section of a multimode o

218 alignment is demonstrated by various shaped indium tin oxide (ITO) patterns.

219 iron oxide (Fe3O4) nanodots fabricated on an indium tin oxide (ITO) substrate via a block copolymer t

220 e-deposited poly(3-hexylthiophene) (P3HT) on indium tin oxide (ITO) substrate.

221 ticulate thin films fabricated on silica and Indium Tin Oxide (ITO) substrates using femtosecond puls

222 ly due to the clustering of BCP molecules on indium tin oxide (ITO) surfaces, which is a significant

223 An optically transparent patterned indium tin oxide (ITO) three-electrode sensor integrated

224 An indium tin oxide (ITO) transparent electrical heater is

225 We demonstrate Mn CSV using an indium tin oxide (ITO) working electrode both bare and c

226 supported by a 20-nm-thick metallic film of indium tin oxide (ITO), a plasmonic material serving as

227 place the most common transparent conductor, indium tin oxide (ITO), with a material that gives compa

228 o become a prominent low-cost alternative to indium tin oxide (ITO).

229 The working electrode was composed of indium tin oxide (ITO); the quasi-reference and auxiliar

230 ch is covalently immobilized on a mesoporous indium tin oxide (mesoITO) scaffold for efficient alcoho

231 -donating P3HT and even inorganic materials, indium tin oxide and gold, showed similar electrical pot

232 g the composite thin film sandwiched between indium tin oxide and indium-gallium eutectic alloy exhib

233 ransparent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role

234 y >10(10) cm(-2) at the interface between an indium tin oxide anode and the common small molecule org

235 ctionalized cerium oxide nanoparticle coated indium tin oxide as a working electrode to observe the e

236 ks are considered a promising alternative to indium tin oxide as transparent conductors.

237 stacks of naphthalenediimides were grown on indium tin oxide by ring-opening disulfide-exchange poly

238 We report that indium tin oxide can acquire an ultrafast and large inte

239 ES) and electrophoretically deposited on the indium tin oxide coated glass substrate at a low DC pote

240 Here, we show that an inverse opal-indium tin oxide electrode hosts a large population of c

241 oxy-substituted polythiophene polymer coated indium tin oxide electrode was used for the determinatio

242 molecules onto a gold-nanoparticle-patterned indium tin oxide electrode.

243 aposed within the 5-100 nm scale pores of an indium tin oxide electrode.

244 ed polythiophene polymer modified disposable indium tin oxide electrode.

245 In contrast, P450 BM3 adsorbed on unmodified indium tin oxide electrodes revealed 36% activity by ele

246 Gold and indium tin oxide electrodes were characterized with resp

247 ucer are composed of a gold electrode and an indium tin oxide film with micrometer separation with a

248 The conducted experiments with a 10 nm indium tin oxide film, having plasmonic resonance in the

249 Epitaxial indium tin oxide films have been grown on both LaAlO3 an

250 cell assembled on a polyethylene naphthalate-indium tin oxide flexible substrate with a PCE of 3.12%

251 ted on graphene electrodes has out-performed indium tin oxide in power conversion efficiency (PCE).

252 rfaces of mesoporous, transparent conducting indium tin oxide nanoparticle (nanoITO) electrodes to pr

253 generation from an individual semiconductor indium tin oxide nanoparticle is significantly enhanced

254 Chemically modified indium tin oxide nanoparticle modified electrodes were u

255 f up to 10(6)-fold compared with an isolated indium tin oxide nanoparticle, with an effective third-o

256 n the sub-picosecond optical nonlinearity of indium tin oxide nanorod arrays (ITO-NRAs) following int

257 stors, conductive transparent electrodes for indium tin oxide replacement, e.g. in light-emitting dio

258 Electropolymerizing polyaniline (PANI) on an indium tin oxide screen-printed electrode (ITO SPE), we

259 In arrays of gold nanoparticles on an indium tin oxide substrate and arrays of 100-nanometer-d

260 mprises a polytetrafluoroethylene film on an indium tin oxide substrate plus an aluminium electrode.

261 to that of their counterparts on rigid glass/indium tin oxide substrates, reaching a power conversion

262 n nanotubes that have been immobilised on an indium tin oxide surface functionalised with osmium-base

263 to achieve this first requires showing that indium tin oxide surfaces can be used for SMLM, then tha

264 hioesters to enolate acceptors on conductive indium tin oxide surfaces.

265 findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (ele

266 Electrode based on transparent layer of indium tin oxide was electrochemically modified with a l

267 , in-situ-grown over a conductive substrate (indium tin oxide) using a low-temperature template-based

268 d quartz, and to conductor supports, such as indium tin oxide, aluminum, highly ordered pyrolytic gra

269 of dielectric nanowires, made of silicon and indium tin oxide, is reversibly structurally deformed un

270 on of an external potential to a transparent indium tin oxide-coated electrode (the substrate), which

271 f colloids generated by photochemistry at an indium tin oxide-coated substrate.

272 h at least a similar workfunction to that of Indium Tin Oxide.

273 sited bismuth telluride thin films, grown on indium tin oxide.

274 than a control diode fabricated on the rigid indium tin oxide/glass substrate.

275 Our cells have a p-i-n structure (glass/indium tin oxide/NiO(x)/perovskite/ZnO/Al), in which the

276 ble perovskite solar-cell devices made on an indium tin oxide/poly(ethylene terephthalate) substrate

277 nalysis of single redox events on a modified indium-tin oxide (ITO) electrode.

278 utions was studied at glassy carbon (GC) and indium-tin oxide (ITO) electrodes modified by gold nanop

279 simple, and disposable immunosensor based on indium-tin oxide (ITO) sheets modified with gold nanopar

280 GZO) and copper oxide, as well as conducting indium-tin oxide and copper metal.

281 oped a tailor-made hierarchically structured indium-tin oxide electrode that gives rise to the excell

282 ned electrode is shown to perform as well as indium-tin oxide glass.

283 smittance > 70%) that are rivalling those of indium-tin oxide.

284 For this purpose, we integrate indium-tin-oxide (ITO) as a tunable electro-optical mate

285 Polycaprolactone (PCL) electrospun fibers on indium-tin-oxide (ITO) glass provide a sufficient surfac

286 oantennas coupled to an optically absorptive indium-tin-oxide (ITO) substrate can generate >micrometr

287 Conductive indium-tin-oxide (ITO, In(2)O(3):Sn) mesoporous films we

288 s were electrophoretically deposited onto an indium-tin-oxide glass substrate and used for immobiliza

289 Here, a sub-10 nm indium-tin-oxide transistor with an ultrashort vertical

290 We present indium-tin-oxide-based photocurrent measurements that re

291 trate-stabilized Au nanoparticles (NPs) onto indium-tin-oxide-coated glass (glass/ITO) electrodes as

292 inc, copper, and tin sulfides are sources of indium to the atmosphere in this region.

293 contacted by a eutectic alloy of gallium and indium top contacts.

294 xamined using boron trifluoride etherate and indium triflate to mediate the reaction.

295 The combination of Pt(0) complexes and indium trihalides leads to compounds that form equilibri

296 The removal of the iodide ion from indium triiodide by means of reactive Ag(I) salts leads

297 This study investigates the indium uptake and accumulation by two staple crops, rice

298 esults revealed that a large portion of soil indium was associated with iron hydroxides, even in acid

299 Even at very acidic pH indium was retained to >98% by nanofiltration, separatin

300 s a significant pathway for the transport of indium, with peak concentrations of 69 ppb and peak flux