ライフサイエンスコーパス: insulator

1 : see text] [Formula: see text] (topological insulator).

2 nsulator (TCI), and higher order topological insulator.

3 the in-plane permittivity of the underlying insulator.

4 and yet has a Fermi surface despite being an insulator.

5 nlinearity-in a photonic Floquet topological insulator.

6 st that the system may be an incipient Chern insulator.

7 e entire footprint of a photonic topological insulator.

8 e diagram and its relationship to the nearby insulator.

9 e low-energy excited spin states in the Mott insulator.

10 ping a strongly correlated antiferromagnetic insulator.

11 rface between the superconductor and the QAH insulator.

12 hromatin, including promoters, enhancers and insulators.

13 es, such as superconductivity and correlated insulators.

14 ot required for many topological crystalline insulators.

15 highly energy-efficient applications of Mott insulators.

16 of three-dimensional topological crystalline insulators.

17 is-regulatory elements such as enhancers and insulators.

18 ed by symmetry eigenvalues), and topological insulators.

19 s comparable to those in devices with strong insulators.

20 es are commonly used to identify topological insulators.

21 rmance potential due to the lack of scalable insulators.

22 ed mechanism is generally applicable to Mott insulators.

23 chalcogenide semiconductors and topological insulators.

24 t of the quantum Hall effect and topological insulators.

25 lectric energy conversion and as topological insulators.

26 ammalian gene that function as enhancers and insulators.

27 rs and more intensive studies on crystalline insulators.

28 with a large anomalous Hall effect and axion insulators(1-3), have directed fundamental research in s

29 y of electronic states, including correlated insulators(1-3), superconductors(2-4) and topological ph

30 ntrol of magnetic states in an orbital Chern insulator(3-6), a magnetic system in which non-trivial b

31 ct has been realized in magnetic topological insulators(3-9) and magic-angle twisted bilayer graphene

32 This is demonstrated for 3D topological insulators, 3D Dirac materials, and 1D quantum anomalous

33 ed column hardware acts to some extent as an insulator, a 10% increase in plate number could be obtai

34 oxide Sr(3) SnO is a topological crystalline insulator, a new electronic phase of matter where the co

35 On doping the half-filled insulator, a sudden drop in resistivity is observed with

36 An intrinsic magnetic topological insulator-a stoichiometric well ordered magnetic compoun

37 y the discovery of the Z(2)-type topological insulator-a type of material that is insulating in its i

38 ferent types of topological insulator: axion insulator, AFM topological crystalline insulator (TCI),

39 cal states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied intens

40 Insulators also gain H3K27ac and CCCTC-binding factor (C

41 Recurrent loss of this insulator alters locus topology in SDH-deficient GISTs,

42 c device consists of a bilayer of a magnetic insulator and a high spin-orbit coupling (SOC) metal coa

43 gions of functional genomic annotation (e.g. insulator and chromatin accessible sites from the ENCycl

44 ns from the candidate superconductor to Mott insulator and metallic phases.

45 non-homogeneous potential in the underlying insulator and semiconductor layer.

46 rials, of which we highlight 241 topological insulators and 142 topological crystalline insulators th

47 , Su(Hw), and dCTCF function as conventional insulators and block cross-talk between the iab-6 and ia

48 semimetals, three-dimensional anomalous Hall insulators and higher-order magnetic semimetals.

49 In previous studies, the CE between insulators and metals has been widely discussed, while C

50 lyses of thermal diffusivity data on complex insulators and on strongly correlated electron systems h

51 f high-temperature superconductors, magnetic insulators and other complex quantum many-body ground st

52 Correlated insulators and superconductivity have been previously ob

53 s (ETSs) in heterostructures of GeTe (normal insulator) and [Formula: see text] [Formula: see text] (

54 gnatures across classes (e.g., enhancers and insulators) and even within each class (e.g., different

55 d valency), YbB(6) (mixed valent topological insulator), and rather ordinary LaB(6) .

56 semiconductor, and later a topological Kondo insulator, and yet has a Fermi surface despite being an

57 pecifically, [Formula: see text] for complex insulators, and [Formula: see text] in the presence of s

58 uitous on the surfaces of semiconductors and insulators, and as a result, substrate electric fields n

59 ct family of 2D superconductors, topological insulators, and excitonic systems based on TMDs with imp

60 le material fibers, but by combining metals, insulators, and semiconductors all within a single stran

61 and skyrmion fluctuations of the correlated insulator are a "mechanism" for superconductivity.

62 ting surface of strained HgTe 3D topological insulator are studied in magnetic fields B tilted by ang

63 Superconducting topological crystalline insulators are expected to form a new type of topologica

64 Kondo insulators are expected to transform into metals under a

65 Ferromagnetic van der Waals (vdW) insulators are of great scientific interest for their pr

66 Here we show that chalcogenide topological insulators are particularly apt candidates for dielectri

67 The boundary modes of topological insulators are protected by the symmetries of the nontri

68 These results identify antiferromagnetic insulators as suitable candidates for the manipulation o

69 proximity engineering of strong topological insulators as well as correlated quantum phases in the s

70 transition from a nontrivial WTI to a normal insulator at roughly room temperature.

71 Our discovery of a C = 2 Chern insulator at zero magnetic field should open up opportun

72 In addition, we find that insulators at half-filling can reappear in small out-of-

73 olling self-assembled nanostructures on bulk insulators at room temperature is crucial towards the fa

74 taining three different types of topological insulator: axion insulator, AFM topological crystalline

75 The classic theory of direct-current (DC) insulator-based dielectrophoresis (iDEP) considers that,

76 Insulator-based dielectrophoresis (iDEP) integrated into

77 This work presents a direct current-insulator-based dielectrophoretic (DC-iDEP) approach to

78 Direct-current insulator-based electrokinetics (DC-iEK) is a branch of

79 he model predictions were validated under an insulator-based microfluidic platform demonstrating pred

80 ractive platform with which to explore Chern insulators because it features nearly flat moire miniban

81 superconductivity by doping the topological insulator Bi(2)Se(3), we find that there exist highly an

82 tructural units present in the van der Waals insulator BiOCl and the three-dimensionally connected se

83 ity of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO(3)/SrTiO(3) super

84 can selectively displace CTCF from specific insulators, but only when precisely targeted to the cogn

85 esistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an

86 que properties, polymers - typically thermal insulators - can open up opportunities for advanced ther

87 with preserved P321 symmetry emerge as Chern insulators (CI) with C = 2 and 1 and band gaps of 41 and

88 nic structure calculations indicate that the insulator consists of charge-ordered Mn(4+) and Mn(3+) w

89 We show that forests function as a thermal insulator, cooling the understory when ambient temperatu

90 A quantum anomalous Hall (QAH) insulator coupled to an s-wave superconductor is predict

91 cal insulator grown on the antiferromagnetic insulator Cr(2) O(3) .

92 harge transport(3) in a magnetic topological insulator, Cr-doped (Bi,Sb)(2)Te(3).

93 e prototypical two-dimensional ferromagnetic insulator, CrI(3).

94 Proteins are widely regarded as insulators, despite reports of electrical conductivity.

95 rs, semimetals, and metals or as topological insulators, Dirac and Weyl nodal-line semimetals, and to

96 demonstrate that stable, partially-heritable insulator disruption can be achieved through combinatori

97 The resistance of a conventional insulator diverges as temperature approaches zero.

98 135-bp deletion spanning only the core CTRL2 insulator domain (DeltaCTRL2) in the 17syn+ background.

99 r symmetry; superconductivity and correlated insulators emerge from this parent state at lower temper

100 tematically, we mapped DNA methylation, CTCF insulators, enhancers, and chromosome topology in KIT-mu

101 A room-temperature insulator (exciton)-metal (plasma) Mott transition is fo

102 a reconfigurable electroacoustic topological insulator exhibiting an analog to the quantum valley Hal

103 The realization of such insulators facilitates the application of dissipationles

104 ismuth is in fact a higher-order topological insulator featuring one-dimensional (1D) topological hin

105 Threshold firing is observed in Mott insulators featuring an insulator-to-metal transition(15

106 In the surface states of topological insulators, fermions are bound by spin-momentum locking

107 ed of heavy-metal/ferromagnet or topological-insulator/ferromagnet bilayers, where the heavy metal or

108 agnetic and topological order in topological insulator films.

109 tuitously small gap, provides an ideal Kondo insulator for this investigation.

110 y different mindset with respect to suitable insulators for 2D technologies may be required.

111 l effect in a magnetically-doped topological insulator grown on the antiferromagnetic insulator Cr(2)

112 ure (WS(2) /MoS(2) ), and an atomically thin insulator (h-BN).

113 compound, which is an antiferromagnetic Mott insulator, has been predicted to lead to the formation o

114 Three-dimensional topological insulators have been demonstrated in recent years, which

115 Recently, mechanical topological insulators have sought to overcome this challenge by sup

116 -of-equilibrium state of nanostructured Mott insulators hold great promises for emerging quantum tech

117 The interface between topological and normal insulators hosts metallic states that appear due to the

118 perimental observation of a correlated Chern insulator in an ABC-TLG/hBN moire superlattice.

119 hat CTRL2 was a functional enhancer-blocking insulator in both epithelial and neuronal cell lines.

120 been shown to be a layered antiferromagnetic insulator in its few-layer form(1), opening up opportuni

121 rom one plateau to the next plateau or to an insulator in quantum Hall and quantum anomalous Hall (QA

122 strate experimentally a photonic topological insulator in synthetic dimensions.

123 ssible dimension for achieving a topological insulator in this class.

124 nnel barriers, capacitor dielectrics or gate insulators in close proximity to qubit devices.

125 We observe quenching of correlated insulators in devices with screening layer separations t

126 croscope to detect a sequence of topological insulators in MATBG with Chern numbers C = +/-1, +/-2 an

127 tons(18-22), but so far photonic topological insulators in synthetic dimensions have not been observe

128 ials, such as the quintessential topological insulators in the Bi(2)X(3) family (X = O, S, Se, Te), a

129 e previously been associated with long-range insulators in the viral genome, it is still unknown whet

130 An axion insulator is a correlated topological phase, which is pr

131 In three dimensions, a topological insulator is classified as either 'strong' or 'weak'(1,2

132 The correlated Chern insulator is ferromagnetic, exhibiting substantial magne

133 The list of suitable alternative insulators is currently very limited.

134 The Chern number of these QAH insulators is determined by the number of undoped topolo

135 lier for bulk systems of strongly correlated insulators is generalized to the case of conventional in

136 The key topological feature in these insulators is instead fractional charge density arising

137 hexagonal boron nitride (h-BN), a typical 2D insulator, is reported.

138 cal edge modes, such as those of topological insulators, is predicted to provide a unique platform fo

139 ature resistivity saturation in the 4f Kondo insulator (KI) SmB(6) has spurred proposals of a correla

140 ickness of the interior magnetic topological insulator layer.

141 ermined by the number of undoped topological insulator layers in the multilayer structure.

142 ng concentration in the magnetic topological insulator layers or the thickness of the interior magnet

143 alternating magnetic and undoped topological insulator layers, fabricated using molecular beam epitax

144 patients of twelve cancer types revealed 672 insulator loops disrupted in at least 10% of patients.

145 sm for their dysregulation via alteration of insulator loops.

146 effects of variants on CTCF/cohesin-mediated insulator loops.

147 ly, we apply these strategies to simulate an insulator loss mechanism implicated in brain tumorigenes

148 the Cr(2) O(3) and the magnetic topological insulator, manifested as an exchange bias when the sampl

149 nmagnetic counterparts, magnetic topological insulators may have some of the surfaces gapped, which e

150 negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconduc

151 ly strong optical nonlinearities in graphene-insulator-metal heterostructures, which demonstrate an e

152 Our findings show that graphene-insulator-metal is a promising heterostructure for optic

153 applying current/voltage, which triggers an insulator-metal transition (IMT).

154 ge of the concentration of Ru ions where the insulator-metal transition occurs.

155 0.34 in close proximity to the doping-driven insulator-metal transition show a pronounced asymmetry.

156 a can be explained in terms of a percolative insulator-metal transition.

157 from 1.86 to 2.44 on the band structure and insulator-metal transitions are presented for the first

158 transport properties during the photoinduced insulator-metal transitions in vanadium dioxide.

159 ally how the intrinsic threshold noise of an insulator-metal-transition (IMT) material can enable SR.

160 esponse in the MFIM stack, compared to Metal-Insulator-Metal.

161 A first-order metal-insulator (MI) transition of transition temperature T (M

162 tical Si nanowires (SiNWs) in an electrolyte-insulator-nanowire (EIN) structure.

163 zation measurements of the doped topological insulators Nb(x)Bi(2)Se(3) and Cu(x)Bi(2)Se(3) reveal th

164 tor, and the recent emergence of topological insulator NWs.

165 onal activator or repressor of promoters and insulator of enhancers.

166 d apply it to our system to stabilize a Mott insulator of photons against losses.

167 ndary states that are themselves topological insulators of lower dimensions, have recently been of gr

168 Photonic topological insulators offer the possibility to eliminate backscatte

169 mselves in momentum space, as in topological insulators or in strong Rashba materials.

170 t broken-symmetry states, interaction-driven insulators, orbital magnets, states with non-zero Chern

171 ac materials including graphene, topological insulators, organic conductors, and magic-angle twisted

172 facilitated method for coating CFs with the insulator Parylene-C.

173 Metal to insulator phase transition due to electron localization

174 versal scaling behavior for the QAH to axion insulator phase transition.

175 tes(4,5), exciton trapping(6) and correlated insulator phases(7).

176 o reduce this higher-dimensional topological insulator phenomena to lower dimensionality by utilizing

177 e high performance observed with these metal/insulator/piezoelectric semiconductor PTJs suggest their

178 In these metal/insulator/piezoelectric semiconductor PTJs, such as Pt/A

179 tus quo and demonstrate a low loss AlGaAs-on-insulator platform with anomalous dispersion and quality

180 ar-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of t

181 of polar mismatch is not applicable in metal-insulator polar-nonpolar interfaces.

182 The classification of topological insulators predicts the existence of high-dimensional to

183 onvey cell-type specific activating signals, insulators prevent the cross-talk of regulatory elements

184 s also a first-order topological crystalline insulator protected by a twofold rotational symmetry.

185 Additionally, buttons are enriched for insulator protein clusters.

186 romatin in D. melanogaster are enriched with insulator proteins BEAF-32, GAF and dCTCF.

187 tain chromatin remodeling factors, including insulator proteins.

188 layers, where the heavy metal or topological insulator provides an efficient source of spin current f

189 pinful model of an s-d-hybridized quadrupole insulator (QI).

190 y introduced quantized multipole topological insulators (QMTIs) reveal new types of gapped boundary s

191 ntal confirmations of the strong topological insulator rapidly followed theoretical predictions(3-5).

192 ring prometaphase, promoters, enhancers, and insulators retain H3K4me3 and H3K4me1, while losing H3K2

193 ecently demonstrated in magnetic topological insulator sandwich samples.

194 loping ultra-low-carrier density topological insulator Sb(2) Te(3) films, an extreme quantum limit of

195 ility of capacitive field-effect electrolyte-insulator-semiconductor (EIS) sensors modified with a ca

196 compared to the planar Si in an electrolyte-insulator-semiconductor (EIS) structure.

197 Electrolyte-insulator-semiconductor (EIS) structures as well as sili

198 Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks through phase-fiel

199 n ultrathin decorating layer to form a metal-insulator-semiconductor (MIS) contact, and an innovative

200 ctrons and holes, similar to a semiconductor-insulator-semiconductor junction.

201 oP(2) NCs is further demonstrated in a metal-insulator-semiconductor photoelectrochemical device cons

202 ly, most materials are classified as trivial insulators, semimetals, and metals or as topological ins

203 nductive oxide layers, separated by a porous insulator, serve as a chemically stable substrate for th

204 and proved their mechanistic role as genomic insulators, shielding the Tyr locus from the expression

205 dge that gap in knowledge by showing how one insulator site in HSV-1 modulates lytic gene transcripti

206 oltaic (PV) cells grown on Si and silicon-on-insulator (SOI) substrates can be integrated using a waf

207 design compact (2.6 x 2.6 mum(2)) silicon-on-insulator (SOI)-based 1 x 2 power splitters with various

208 transition field of spin-orbit-coupled Mott insulator Sr(2) IrO(4) can be in situ modulated by almos

209 ptical detection technique and reveal a Mott insulator state at one hole per superlattice site and su

210 The recent discovery of correlated insulator states and superconductivity in magic-angle tw

211 For example, mini-Dirac points, tunable Mott insulator states and the Hofstadter butterfly pattern ca

212 The correlated insulator states can be switched on and off by the displ

213 We find that the gaps of these insulator states increase with in-plane magnetic field,

214 rich phase diagram, with tunable correlated insulator states that are highly sensitive to both the t

215 The recent discovery of correlated insulator states, superconductivity and the quantum anom

216 ands, indicating the emergence of correlated insulator states.

217 ssly integrated with conventional silicon-on-insulator strip waveguides and vertical couplers.

218 ements - promoters, enhancers, silencers and insulators, subsequently changing their target gene expr

219 erlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity,

220 y applied to spin, superconducting, and Mott insulator systems.

221 axion insulator, AFM topological crystalline insulator (TCI), and higher order topological insulator.

222 tinctly different strain values, inducing an insulator that can be extinguished by a magnetic field.

223 Here, we propose a new type of excitonic insulator that exhibits order parameter with p + ip symm

224 cate and characterize an optical topological insulator that exhibits the valley Hall effect.

225 gesting that [Formula: see text] is an ideal insulator that is immune to disorder.

226 We focused on a disrupted insulator that normally partitions a core GIST super-enh

227 reaking time-reversal symmetry to form Chern insulators that are stabilized by weak magnetic fields.

228 s is generalized to the case of conventional insulators that contain localized bands a few eV above a

229 l insulators and 142 topological crystalline insulators that have either noticeable full bandgaps or

230 For high-order insulators, these modes appear at boundaries of higher c

231 rac materials, and 1D quantum anomalous Hall insulators, though this can be applied to similar system

232 undreds of micrometers along the topological insulator (TI) nanoribbons before recombination at up to

233 ion of water at the surface of a topological insulator (TI), Bi[Formula: see text]Te[Formula: see tex

234 Magnetic topological insulators (TI) provide an important material platform t

235 Emergent topological insulators (TIs) and their design are in high demand for

236 ological surface states (TSS) in topological insulators (TIs) can exert strong spin-orbit torque (SOT

237 te thinness in three-dimensional topological insulators (TIs) is breaking new ground in quantum scien

238 enge in engineering devices with topological insulators (TIs) is that electron transport is dominated

239 Here, the strong SOC from topological insulators (TIs) is utilized to provide a large interfac

240 ls of a correlation-driven topological Kondo insulator (TKI) with exotic ground states.

241 (cooperative plasmonic effects), electronic (insulator to a conductor), and chemical parameters (mult

242 d-driven quantum phase transition from a QAH insulator to an axion insulator was recently demonstrate

243 d by diluting the conductive polymer with an insulator to decrease the conductance.

244 ion efficiency (increase by five times) upon insulator to metal transition.

245 l (monoclinic to tetragonal) and electrical (insulator to the conductor) transitions presents a formi

246 ociated herpesvirus (KSHV) utilize chromatin insulators to order protein recruitment and dictate the

247 emonstrate that ELBA collaborates with other insulators to regulate developmental patterning.

248 th and hysteresis-free nature of this unique insulator-to-metal phase transition enabled us to engine

249 As the metamaterial is heated, the insulator-to-metal phase transition of vanadium dioxide

250 anoseconds, it is possible to re-trigger the insulator-to-metal transition by using subthreshold volt

251 ing created by current spikes to trigger the insulator-to-metal transition in a biased VO(2) nanogap.

252 fast electron microscopy to photo-induce the insulator-to-metal transition in a single VO(2) nanowire

253 It is observed that the insulator-to-metal transition in VO(2) has a profound im

254 This hitherto unobserved insulator-to-metal transition mediated by fully symmetri

255 roughout the whole temperature regime as the insulator-to-metal transition occurs.

256 is observed in Mott insulators featuring an insulator-to-metal transition(15,16), which can be trigg

257 sts a purely electronic mechanism behind the insulator-to-metal transition, recently the mutual enhan

258 istive devices within the framework of metal-insulator topotactic phase transitions.

259 tal stages and reflect the interplay between insulators, transcriptional states, and enhancer activit

260 The metal-to-insulator transition (MIT) closest to room temperature o

261 The metal-insulator transition (MIT) in transition-metal-oxide is

262 ic properties of oxides that feature a metal-insulator transition (MIT) is a key requirement for deve

263 metal transition (SMT) to the superconductor-insulator transition (SIT) via the intermediate Bose met

264 material, triggering ferroelectricity, metal/insulator transition and colossal magnetoresistance.

265 ures a pronounced, thermally-driven metal-to-insulator transition at 340 K.

266 nt conditions, resulting in a superconductor-insulator transition at magic twist angles(8).

267 teau to plateau transition, the QAH to axion insulator transition can also be understood by the Chalk

268 rge-spin conversion efficiency via the metal-insulator transition in a quintessential strongly correl

269 ered oxygen coordination triggers a metal-to-insulator transition in SCO/LNO superlattices.

270 The metal-to-insulator transition is linked to the cooperative effect

271 ntal analysis of the dependence of the metal-insulator transition of [Formula: see text] on crystal s

272 Utilizing the metal-insulator transition of VO(2), we exemplify that mobile

273 rmodynamics is presented, in which the metal-insulator transition results from electrically driven ph

274 t demonstrates a near-room-temperature metal-insulator transition that may be used in such appliances

275 nic and lattice effects in driving the metal-insulator transition.

276 cal materials systems, including topological insulators, transition metal dichalcogenides, and transi

277 lysis, it is found that this quantum-Hall-to-insulator-transition belongs to a new universality class

278 In this work, we achieved tunable metal-insulator transitions (MIT) in oxide heterostructures by

279 emory alloys (SMAs), switches based on metal-insulator transitions (MITs), etc.

280 existing data(3-5) on the tuning of metal-to-insulator transitions in perovskite transition-metal oxi

281 conclusions will generalize to all metal-to-insulator transitions that couple to a change in lattice

282 Metal-to-insulator transitions(1) driven by strong electronic cor

283 ticality analogous to that reported in Kondo insulators under pressure.

284 analogue of a quantized octupole topological insulator using negatively coupled resonators.

285 to this limit in a low-dissipation magnetic insulator using pure spin currents from the spin Hall ef

286 Using nanowires of two archetypal Mott insulators-VO(2) and V(2)O(3) we unequivocally show that

287 ng deep reactive ion etching of a silicon-on-insulator wafer and bonded to a polydimethylsiloxane mic

288 transition from a QAH insulator to an axion insulator was recently demonstrated in magnetic topologi

289 d with DeltaCTRL2, indicating that the CTRL2 insulator was required for the efficient establishment o

290 ndscapes, we identified hundreds of putative insulators where DNA methylation replaced CTCF binding i

291 ride) membrane, referred to as a "meta-skin" insulator, which is able to confine acoustic waves in an

292 Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides

293 By utilizing the meta-skin insulator with broadband and high throughput, orbital-an

294 microscopic model, we find a re-entrant Mott insulator with the increasing electric field for phonon

295 rents of 2-dimensional (2D) topological band insulators with broken time-reversal symmetry.

296 vations and establish phase diagrams for QAH insulators with high, tunable Chern number.

297 Haldane(4) later theorized that Chern insulators with integer quantum Hall effects could appea

298 iniscent of the thermal Hall conductivity of insulators with spin-liquid states(4-6), pointing to neu

299 gel touch pads are adhered to curved or flat insulators, with the high-resolution and self-healable i

300 a first-principles basis both in the parent insulator YBa(2)Cu(3)O(6) and the near-optimally doped Y

301 ion to the antiferromagnetic charge transfer insulator YBa(2)Cu(3)O(6.1) revealed rapid demagnetizati