ライフサイエンスコーパス: integrated circuit

1 not suitable for insertion in a conventional integrated circuit.

2 n of a high-performance three-stage graphene integrated circuit.

3 -, and space-multiplex reactions on a single integrated circuit.

4 colonize multiple niches relies on a large, integrated circuit.

5 ed control of exciton fluxes in an excitonic integrated circuit.

6 for quantum communication on wires within an integrated circuit.

7 sion multiplexing in an all-silicon photonic integrated circuit.

8 stors in a conventional, commercial, silicon integrated circuit.

9 ed nodes and woven into a deformable textile integrated circuit.

10 mplementary metal oxide semiconductor (CMOS)-integrated circuit.

11 ansducer, an energy-storage capacitor and an integrated circuit.

12 ontrol of lesions at different nodes of this integrated circuit.

13 al adaptive microwave materials, devices and integrated circuits.

14 ntegration of nanoribbons into future hybrid integrated circuits.

15 an attractive route for fabricating photonic integrated circuits.

16 external environment and the current silicon integrated circuits.

17 roadblock toward ultra-high density photonic integrated circuits.

18 s for solution-processable, high-performance integrated circuits.

19 ures, smart skin, and silicon-based photonic integrated circuits.

20 g role in a way similar to that witnessed in integrated circuits.

21 monolayer MoS2 and fabrication of MoS2-based integrated circuits.

22 ich pose difficulties for incorporation into integrated circuits.

23 rgy conversion and the thermal management of integrated circuits.

24 eter distributions, typically inadequate for integrated circuits.

25 ay be utilized to miniaturize radiofrequency integrated circuits.

26 admap towards future ultradense nanophotonic integrated circuits.

27 rest for diffusion barriers in Cu-metallized integrated circuits.

28 synthesis of atomically thin two-dimensional integrated circuits.

29 the only approach toward flexible microwave integrated circuits.

30 ieving transistor-type devices for nanoscale-integrated circuits.

31 disease and the study of heat dissipation in integrated circuits.

32 -frequency transistors and in graphene-based integrated circuits.

33 de (a-IGZO) thin-film transistors (TFTs) and integrated circuits.

34 in energy applications and in the cooling of integrated circuits.

35 be the next step for quantum computing with integrated circuits.

36 rials and suggest substantial promise for 3D integrated circuits.

37 molecularly thin superlattices, devices and integrated circuits.

38 of densely interconnected three-dimensional integrated circuits.

39 hanics and the electronic behaviors of these integrated circuits.

40 gy, similar to the development of electronic integrated circuits.

41 bility that enable high-yield fabrication of integrated circuits.

42 high-performance, stretchable, and foldable integrated circuits.

43 hemical-mechanical planarization of advanced integrated circuits.

44 ccess of silicon-on-insulator (SOI) photonic integrated circuits.

45 existing semiconductor processing for future integrated circuits.

46 rials that can be used to manufacture faster integrated circuits.

47 and potentially higher speeds than Nb-based integrated circuits.

48 components that are lattice-matched to GaAs integrated circuits.

49 cells, and high-permittivity dielectrics for integrated circuits.

50 ications in large-area thin-film devices and integrated circuits.

51 ns, should allow the creation of all-optical integrated circuits.

52 rconnect structures in future generations of integrated circuits.

53 ovide a new route to low-cost fabrication of integrated circuits.

54 d be compatible with future ultralarge-scale integrated circuits.

55 large-scale silicon electronic and photonic integrated circuits.

56 passive external cavities based on photonic integrated circuits.

57 e on sapphire for scalable photonic-phononic integrated circuits.

58 enna is viable for applications in terahertz integrated circuits.

59 vement of optoelectronic devices in photonic integrated circuits.

60 r next generation compact photonic/plasmonic integrated circuits.

61 om temperature lasers on electronic-photonic integrated circuits.

62 l for the development of large-scale organic integrated circuits.

63 vice size of flexible, colloidal nanocrystal integrated circuits.

64 emerges as a promising platform for photonic integrated circuits.

65 r increasing the packing density of photonic integrated circuits.

66 the realization of fully functional photonic-integrated circuits.

67 ssibilities for group IV lasers for photonic-integrated circuits.

68 ed functionality, performance and scaling in integrated circuits.

69 tremendous potential for its application in integrated circuits.

70 taics, energy storage elements, and bare die integrated circuits.

71 ations in the thermal management of flexible integrated circuits.

72 ital for the next generation of miniaturized integrated circuits.

73 phene and unique monolithic electro-acoustic integrated circuits.

74 l in all-optical control system and photonic integrated circuits.

75 ore's law of the number of transistors in an integrated circuit(1).

76 manufacturing techniques are used to make an integrated circuit able to directly perform non-optical

77 ordered arrays of nanotubes for large-scale integrated circuits, an area in which there has been sig

78 -based quantum processor in silicon-photonic integrated circuits and demonstrate its enhancement of q

79 films on arbitrary soft substrates promises integrated circuits and devices that can significantly a

80 Capacitors are a mainstay of electronic integrated circuits and devices, where they perform esse

81 ions of gallium are NdFeB permanent magnets, integrated circuits and GaAs/GaP-based light-emitting di

82 ical problem of power dissipation in today's integrated circuits and lead to the realization of a new

83 simple enough to be integrated into existing integrated circuits and microelectromechanical system de

84 ors are indispensable components of photonic integrated circuits and offer several useful operational

85 integratable into microelectronic, photonic-integrated circuits and silicon photonics processes, wit

86 sirable for next-generation energy-efficient integrated circuits and ultralow-power applications.

87 r, for example, is used for metallization in integrated circuits, and a detailed understanding of nuc

88 ary field-effect transistors, optoelectronic integrated circuits, and enantiomer-recognition sensors.

89 tions, ranging from energy to biomedical, to integrated circuits, and to robotics.

90 rs have recently been explored as a compact, integrated circuit- and room temperature operation-compa

91 mplementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional dev

92 red fabrication realizes a three-dimensional integrated circuit architecture with fine-grained and de

93 in transistors, data storage technologies or integrated circuit architectures alone.

94 ultaneously realize improved devices and new integrated circuit architectures, are required.

95 Unlike conventional integrated circuit architectures, the layered fabricatio

96 Although silicon-based 3D integrated circuits are commercially available(3-5), the

97 The integrated circuits are constructed from lithographicall

98 g dynamic control of optical polarization in integrated circuits are envisioned.

99 mponents fabricated on the same substrate as integrated circuits are important for future high-speed

100 Integrated circuits are present in all electronic device

101 mplementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates

102 The imminent limitations of electronic integrated circuits are stimulating intense activity in

103 up new avenues for ultra-dense and low-power integrated circuits, as well as for ultra-sensitive bios

104 ng for applications in ambipolar devices and integrated circuits, as well as model systems for fundam

105 nd an interface readout application specific integrated circuit (ASIC).

106 en discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blo

107 MHz, which represents the highest-frequency integrated circuit based on chemically synthesized nanos

108 Our predictions pave way to realization of integrated circuits based on exciton-polariton Rabi osci

109 he development of reliable, high performance integrated circuits based on thin film transistors (TFTs

110 Here we present an integrated circuit-based electrochemical sensing platfor

111 This integrated-circuit-based technique promises wide applica

112 ommunication with a personal computer via an integrated circuit board.

113 onventional top-down lithography for silicon integrated circuits, but alternative approaches may well

114 are sought for their use in next generation integrated circuits, but several challenges limit the us

115 building blocks for next-generation photonic integrated circuits, but technological implementation in

116 are based on ubiquitous CMOS technology, the integrated circuits can be readily developed to include

117 ion technology, similar to that used to make integrated circuits, can be employed to make integrated

118 Here, we propose and demonstrate a microwave-integrated circuit capable of implementing universal uni

119 ags consist of an antenna, a radio frequency integrated circuit chip (RFIC), and at least one sensor.

120 than that of a typical application-specific integrated circuit chip.

121 Conventional wireless e-skins rely on rigid integrated circuit chips that compromise the overall fle

122 gots into thin wafers for the fabrication of integrated-circuit chips and solar cells.

123 e development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broad

124 of the enteric nervous system, which form an integrated circuit composed of sensory neurons, modulato

125 Further, we use a photonic integrated circuit comprising an Indium phosphide based

126 ng strategy promises low-cost fabrication of integrated circuits, conductive patterns and bio-microar

127 owaves, even those guided by the wires of an integrated circuit, consist of discrete photons.

128 ric laser is implemented based on a photonic integrated circuit consisting of two mutually coupled ac

129 sistors to date, a three-dimensional organic integrated circuits consisting of 5 transistors and 20 m

130 rs that interface with the skin with silicon integrated circuits consolidated on a flexible circuit b

131 sed material usage, especially reductions in integrated circuit content.

132 an important step in quantum computing with integrated circuits, continuing efforts to increase qubi

133 Such phononic integrated circuits could provide an invaluable resource

134 The implementation of an integrated-circuit CT detector provides substantially sh

135 aw, complexity and functionality of photonic integrated circuits depend on device size and performanc

136 ient travel, image processing and optimizing integrated circuit design, are modeled as complex combin

137 pacemakers is reduced to uW-level by a novel integrated circuit design, which considerably extends th

138 ays, which can introduce complexities in the integrated circuit design.

139 m microchiplets into an application-specific integrated circuit designed for cryogenic control.

140 ation dual-source CT system equipped with an integrated-circuit detector was used.

141 e development of sophisticated, high-density integrated circuit devices that may be implanted either

142 with built-in energy needs for operation of integrated circuits driving a microprocessor.

143 When embedded in ex vivo porcine tissue, the integrated circuit efficiently harvested ultrasonic powe

144 te the use of SPICE (Simulation Program with Integrated Circuit Emphasis) for simulating the electric

145 Consequently, the demonstrated photonic integrated circuit enters a regime that gives rise to ul

146 into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300 mm foundry proce

147 fluidic devices are analogous to electronic integrated circuits fabricated using large-scale integra

148 entz reciprocity in a manner compatible with integrated-circuit fabrication.

149 of-the-art (seven-nanometre node) commercial integrated circuit, featuring nanostructures made of low

150 Central component is an integrated circuit for impedance spectroscopy.

151 onal complementary metal-oxide-semiconductor integrated circuit for the first time.

152 e technology, here we demonstrate a class of integrated circuits for executing sequential and paralle

153 CEP detection, and inform the development of integrated circuits for PHz electronics as well as integ

154 o for the implementation of silicon photonic integrated circuits for sensing, biomedical instrumentat

155 uch substrates are deployed in, for example, integrated circuits for synthesizing and converting nonp

156 advanced packaging and vertical stacking of integrated circuits, for minimized latency and energy co

157 adaptive networks and with state-of-the-art integrated circuit foundries.

158 ogress towards the goal of producing complex integrated circuits from bulk-grown SWNT material.

159 tal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plas

160 between matter qubits and photonic qubits in integrated circuit geometries.

161 As silicon-based transistors in integrated circuits grow smaller, the concentration of c

162 s, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity

163 ate of rigid chip-based monolithic microwave integrated circuits has been the only approach toward fl

164 ystal field-effect transistors in large-area integrated circuits has not been shown.

165 important step in creating a two-dimensional integrated circuit, has so far remained elusive.

166 Photonic-integrated circuits have emerged as a scalable platform

167 Transistors in these integrated circuits have excellent properties: mobilitie

168 en by a rotating magnetic field clock, these integrated circuits have general multiplexing properties

169 Filling this gap is important because integrated circuits have shrunk so far that their active

170 ower complementary metal-oxide-semiconductor integrated circuits, here we report the first successful

171 defects and voids, in the next generation of integrated circuits, higher resolution methods of surfac

172 s with the advanced technologies of photonic integrated circuits holds great potential to create devi

173 present a monolithic low-power-consuming PMS integrated circuit (IC) chip capable of dynamic maximum

174 tor and filtered back projection (FBP) or an integrated circuit (IC) detector and iterative reconstru

175 A 16-channel, 64-electrode-per-channel CMOS integrated circuit (IC) fabricated in a 0.5 um CMOS proc

176 Here, we explore TIs on an integrated circuit (IC) platform with a standard complem

177 icated by complex and expensive vacuum-based integrated circuit (IC) processes.

178 d and fabricated using a combination of CMOS integrated circuit (IC) technology and a photolithograph

179 ntegrated biosensor based on phototransistor integrated circuits (IC) for use in medical detection, D

180 innovative packaging solutions have made 3D integrated circuits (ICs) commercially viable, the inclu

181 In this work, integrated circuits (ICs) for monolithic implementation

182 rformance and integration density of silicon integrated circuits (ICs) have progressed at an unpreced

183 The success of silicon based high density integrated circuits ignited explosive expansion of micro

184 Here we present a photonic integrated circuit in thin-film lithium niobate that mee

185 mission line, it is possible to construct an integrated circuit in which the presence or absence of e

186 Complementary integrated circuits in an elastic format are essential f

187 that could enable the construction of large, integrated circuits in single cells.

188 As an additional benefit the integrated circuit inherits the property of amplificatio

189 sensors, two-dimensional photonic crystals, integrated circuit interconnects, and alternative curren

190 tal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscill

191 efficiency of 99%, we show that a SAW-driven integrated circuit is feasible with single electrons on

192 An integrated circuit is powered by adenosine triphosphate

193 A power management integrated circuit is used to harvest energy from the in

194 ity to control light propagation in photonic integrated circuits is at the foundation of modern light

195 Here, a decisive advance in 2D integrated circuits is reported, where the device integr

196 and optical communication is required at the integrated circuit level.

197 aller critical dimensions in next-generation integrated circuit lithography.

198 ddressability and circuit interconnection in integrated circuit manufacturing and nanotechnology.

199 design, the proposed approach of mechanical integrated circuit materials can be realized on any leng

200 an autonomous miniature temperature logging integrated circuit (Maxim Thermochron iButton) that can

201 eloped to fabricate nanoscale components for integrated circuits, medical diagnostics and optoelectro

202 any different fields of engineering, such as integrated circuits, memristors, and photonics.

203 al management in nanoscale systems including integrated circuits might not be as challenging as previ

204 Custom integrated circuits modeling biological neural networks

205 Here, we report the design of a battery-less integrated circuit mote acting as an electronic reporter

206 Here, we demonstrate an integrated circuit of thirty oscillators with highly rec

207 Fully functional integrated circuits of digital and analog building block

208 ocesses central to IBD but also provides the integrated circuits of genetic, molecular, and clinical

209 IKKepsilon to target promoters that contain "integrated circuits" of kappaB and AP-1 sites, resulting

210 The ability to form integrated circuits on flexible sheets of plastic enable

211 general strategy for realizing high-density integrated circuits on randomly shaped, nondevelopable s

212 An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequenc

213 The integrated circuit operates as a broadband radio-frequen

214 o facilitate corrosion of the metal parts of integrated circuits or electronics are drawbacks of aque

215 information from functional systems such as integrated circuits or mammalian brains.

216 periodic doubling of transistor densities in integrated circuits over the past fifty years.

217 , including texts, spirals, line arrays, and integrated circuit patterns, with a feature line width o

218 in the visible optical domain on a scaled-up integrated circuit phantom.

219 r us to design high-performance self-powered integrated circuit photodetector.

220 ce, light-emitting diodes (LED), single-chip integrated circuit photodetectors, embedded microcontrol

221 Here we present a photonic integrated circuit (PIC) chip, utilizing the sine-cosine

222 we demonstrate a foundry-fabricated photonic integrated circuit (PIC) combining suspended silicon wav

223 We report a monolithic photonic integrated circuit (PIC) for THz communication applicati

224 highly coherent colour centres-on a photonic integrated circuit (PIC).

225 based on generic foundry-fabricated photonic integrated circuits (PIC) attached to a uni-traveling ca

226 Photonic integrated circuits (PICs) enable the miniaturization of

227 Reconfigurability of photonic integrated circuits (PICs) has become increasingly impor

228 ture enabled by large-scale visible photonic integrated circuits (PICs)(4-7) to address these challen

229 , we performed space experiments of photonic integrated circuits (PICs), revealing the critical roles

230 e structures in a flexible silicon photonics integrated circuit platform unconstrained by crystalline

231 energy efficiency and integration density of integrated-circuit products, in the past six decades the

232 used as building blocks to construct complex integrated circuits, promising a viable material for low

233 A wide range of applications in conformal integrated circuits, radio-frequency electronics, artifi

234 ee-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological

235 In particular, three-dimensional integrated circuits require a large number of vertical i

236 Modern advanced photonic integrated circuits require dense integration of high-sp

237 Continuous ongoing development of dense integrated circuits requires significant advancements in

238 redicting ambitious miniaturization rates of integrated circuits, requires to go beyond the tradition

239 semiconductor sensors with Si-based readout integrated circuits (ROIC) by indium bump bonding which

240 chnologies and increase our understanding of integrated-circuit scaling, here I review fundamental li

241 ere we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circ

242 To rival the performance of modern integrated circuits, single-molecule devices must be des

243 Here, we report a flexible microwave integrated circuit strategy integrating membrane AlGaN/G

244 nts a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED di

245 mically thin layers has paved the way for 2D integrated circuits, such as digital logic circuits and

246 ont of inexpensive large-area solar cell and integrated circuit technologies because of their reduced

247 e expect to need for the construction of new integrated circuit technologies in 2013 have 'no known s

248 auging progress in the various semiconductor integrated circuit technologies is the spacing, or pitch

249 The use of state-of-the-art submicrometer integrated circuit technologies should allow the future

250 c components and compatible with traditional integrated circuit technologies.

251 Promising ingredients for advances in integrated circuit technology are nanowires, molecular e

252 Combining biomolecular function with integrated circuit technology could usher in a new era o

253 rection for further developments in photonic integrated circuit technology is also discussed, along w

254 , on-chip devices compatible with electronic integrated circuit technology offer great advantages in

255 Improving integrated circuit technology will require that these di

256 cal SiO2/Si interface, which is the basis of integrated circuit technology, is prepared by thermal ox

257 nificant advances have been made in photonic integrated circuit technology, similar to the developmen

258 Despite much progress in semiconductor integrated circuit technology, the extreme complexity of

259 t of goals established for advancing silicon integrated circuit technology-have challenged the comput

260 nce characteristics that exceed conventional integrated circuit technology.

261 semiconductor (CMOS) analog very-large-scale-integrated circuit technology.

262 served as the primary material platform for integrated circuit technology.

263 ernative for PCB, we described a non-printed integrated-circuit textile (NIT) for biomedical and ther

264 Here, we report on an integrated circuit that combines the capture of CTCs wit

265 dation for realizing large-scale LN photonic integrated circuits that are of immense importance for b

266 in mechanics and materials provide routes to integrated circuits that can offer the electrical proper

267 racteristic is a hallmark of applications of integrated circuits that exist today, there might be opp

268 conductor platform paves the way for quantum integrated circuits that host both the quantum hardware

269 iversity of neuronal cell types and complex, integrated circuits that permit the ENS to autonomously

270 We constructed three genomically integrated circuits that use bistable autoregulatory tra

271 most widely used technology for constructing integrated circuits, the complementary metal-oxide semic

272 nic waveguides and the formation of phononic integrated circuits through exploiting a gallium-nitride

273 al diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale

274 (87)Rb 3D-MOT using a fiber-coupled photonic integrated circuit to deliver all beams to cool and trap

275 circuit performance allow us to use graphene integrated circuit to perform practical wireless communi

276 tructural materials to quantum devices, from integrated circuits to biological cells.

277 mplementary metal-oxide-semiconductor (CMOS) integrated circuits to realize a high-fidelity all-elect

278 Because a superconducting integrated circuit uses a multilayer of superconducting,

279 a silicon chip via an ultra-compact photonic integrated circuit using low-loss silicon photonic cryst

280 areas and can energize off-the-shelf sensor integrated circuits using temperature differences <=25 K

281 Monolithic 3D integrated circuits using transition metal dichalcogenid

282 lustrate the complete integration of silicon integrated circuits via pick and place or using organic

283 The explosive growth in semiconductor integrated circuits was made possible in large part by d

284 e-based detection methods with an underlying integrated circuit, we are now poised to create a truly

285 Application-specific photonic integrated circuits, where particular circuits/chips are

286 Our results define a single integrated circuit whose components and connectivity can

287 The introduction of molecular devices into integrated circuits will probably depend on the formatio

288 a conventional diffraction-limited photonic integrated circuit, will require the use of waveguides w

289 s provide a voltage sufficient to operate an integrated circuit with a conversion efficiency of chemi

290 Furthermore, we realize a large-scale integrated circuit with more than 1,000 transistors and

291 Combining photonic integrated circuits with a biologically based sensing ap

292 are crucial for the development of photonic integrated circuits with complex functionalities.

293 materials enable the fabrication of advanced integrated circuits with ever-decreasing feature sizes.

294 y, intrinsically stretchable transistors and integrated circuits with high driving ability, high oper

295 architecture, combining monolithic microwave integrated circuits with PICs based on the recently emer

296 ble route toward the realization of photonic integrated circuits with ultra-high packing densities.

297 er, a basic building block for semiconductor integrated circuits, with gain reaching 15 at V(D) = 5 V

298 otubes are attractive materials for flexible integrated circuits, with many potential areas of applic

299 Fabrication of a graphene integrated circuit without significantly degrading trans

300 rs later that the number of components in an integrated circuit would double every 1 to 2 years with