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1 aterials studied so far(12,13) (for example, molybdenum disulfide).
2 ce and Raman spectra of a bare bilayer MoS2 (Molybdenum disulfide).
3 ) - in bilayer graphene when interfaced with molybdenum disulfide.
4 d electronic response of synthetic monolayer molybdenum disulfide.
5 ble band gap that can be as large as that of molybdenum disulfide.
10 ctures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barr
12 ndeed, we show basal plane activation of 1T' molybdenum disulfide and a lowering of DeltaG(H) from +1
14 o-dimensional (2D) layered materials, namely molybdenum disulfide and black phosphorus field effect t
15 selection of active van der Waals materials- molybdenum disulfide and black phosphorus, their electri
16 e apply this method to the specific cases of molybdenum disulfide and graphene oxide particles, dispe
17 en the intensities of the two Raman bands of molybdenum disulfide and graphene oxide, we demonstrate
18 using a combination of solution-processed 2D-molybdenum disulfide and graphene-oxide (GO) that can be
19 , incorporated as an interface layer between molybdenum disulfide and hafnium dioxide in a bottom-gat
20 he full dielectric tensors of nanometer-thin molybdenum disulfide and hexagonal boron nitride microcr
21 the current study, the biological effect of molybdenum disulfide and molybdenum diselenide TMD NFs o
22 terogeneous nucleation of the first layer of molybdenum disulfide and simultaneously catalyzes homoep
23 isting of chemical vapor deposited monolayer molybdenum disulfide and solution-processed semiconducti
24 ce p-type devices on single- and few-layered molybdenum disulfide and tungsten diselenide based on in
25 prepare composite films made from chitosan, molybdenum disulfide, and zinc oxide (chi-ZnO-MoS(2)).
26 Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting materi
28 d carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors
29 germanium as the source and atomically thin molybdenum disulfide as the channel, a vertical heterost
32 num disulfide foam outperforms most reported molybdenum disulfide-based Lithium-ion battery anodes an
33 milies of precious metal free HER catalysts; molybdenum disulfide-based, transition metal phosphides,
35 lectrically tunable bipolar black phosphorus-molybdenum disulfide (bP-MoS(2)) photodiodes in the near
36 s have been well established for crystalline molybdenum disulfide (c-MoS2) but not for amorphous moly
37 , we report that the thermal conductivity of molybdenum disulfide can be modified by electrochemical
38 mulations, that a nanopore in a single-layer molybdenum disulfide can effectively reject ions and all
39 sts a potential way to design newly advanced molybdenum disulfide catalysts through modulating the in
42 dified with gold nanoparticle decorated on a molybdenum disulfide/chitosan (Au@MoS(2)/Ch) nanocomposi
43 we push the electrical contact of monolayer molybdenum disulfide close to the quantum limit by hybri
44 ructures made of single-layer semiconducting molybdenum disulfide contacting conductive graphene.
45 intrinsic HER-active Ni-based materials into molybdenum disulfide could effectively regulate its elec
46 for 2H to +0.18 eV for 1T', comparable to 2H molybdenum disulfide edges on Au(111), one of the most a
47 extraordinary electrochemical performance of molybdenum disulfide foam outperforms most reported moly
49 tiscale structural and electronic control of molybdenum disulfide foam to synergistically promote the
51 cles, by coating Graphene Oxide (GO), and GO/Molybdenum disulfide (GO/MoS(2)) and carrying out in sit
52 a field-effect transistor biosensor based on molybdenum disulfide/graphene (MoS(2)/graphene) hybrid n
54 th a notable advantage in terms of capacity, molybdenum disulfide has been considered a promising ano
55 or intercalation anodes such as graphite or molybdenum disulfide has been shown to avoid such a degr
57 tubes (INT-WS2) and inorganic fullerene-like molybdenum disulfide (IF-MoS2) nanoparticles (NPs) used
58 that hydrazine acts as an electron dopant in molybdenum disulfide, increasing its conductivity, while
60 erent interlayer separations between the two molybdenum disulfide layers in different stacking config
61 system where valley-specific emission from a molybdenum disulfide monolayer interacts with a resonant
62 raphene liquid cell, consisting of a central molybdenum disulfide monolayer separated by hexagonal bo
63 roach for large-scale and highly crystalline molybdenum disulfide monolayers using a solution-process
64 Here we unambiguously solve the structure of molybdenum disulfide monolayers using high-resolution tr
70 have suggested that Cu(2)MoS(4) outperforms molybdenum disulfide (MoS(2)) because of its more modera
71 l layers of hexagonal boron nitride (BN) and molybdenum disulfide (MoS(2)) crystals on single-walled
73 t reports of various photodetectors based on molybdenum disulfide (MoS(2)) field effect transistors s
74 iling approach to synthesize high-quality 2D molybdenum disulfide (MoS(2)) for electronic devices.
75 e synthesis (<=150 mm diameter) of monolayer molybdenum disulfide (MoS(2)) have already been reported
76 Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS(2)) have attracted tremendous
77 2D) transition-metal dichalcogenides such as molybdenum disulfide (MoS(2)) have been demonstrated to
78 onstrate a reconfigurable tin oxide (SnO(x))/molybdenum disulfide (MoS(2)) heterogeneous memristive d
81 guides-delta waveguides-based on wafer-scale molybdenum disulfide (MoS(2)) monolayers that can guide
82 duce a nanomaterial-based approach employing molybdenum disulfide (MoS(2)) nanoflowers with atomic-sc
85 ed, we created a filter medium consisting of molybdenum disulfide (MoS(2)) nanoparticles attached to
86 gen-doped graphene sheets (N-RGO) supporting molybdenum disulfide (MoS(2)) nanoparticles with high-pe
90 res, nanopores constructed in a monolayer of molybdenum disulfide (MoS(2)) stand out as powerful devi
91 monolithic 3D integration of atomically-thin molybdenum disulfide (MoS(2)) transistors and 3D vertica
92 lectrical contacts of high-density monolayer molybdenum disulfide (MoS(2)) transistors, exhibiting hi
93 tween two substrates of exfoliated hexagonal molybdenum disulfide (MoS(2)) with varying orientation o
94 sed triangular active edge site fragments of molybdenum disulfide (MoS(2)), a widely used industrial
95 nsition metal dichalcogenides (TMD), such as molybdenum disulfide (MoS(2)), have aroused substantial
96 transition metal dichalcogenides, including molybdenum disulfide (MoS(2)), have previously been cons
97 tly synthesize a 2D semiconductor, monolayer molybdenum disulfide (MoS(2)), in arbitrary patterns on
99 em, the hydrogen evolution reaction (HER) at molybdenum disulfide (MoS(2)), where higher electrocatal
100 o study phototransistors made from monolayer molybdenum disulfide ( MoS2 ) placed on top of a back-ga
102 raphene quantum dots (GQDs) interacting with molybdenum disulfide (MoS2 ) monolayers induce an effect
103 ly crosslinked hydrogels from defect-rich 2D molybdenum disulfide (MoS2 ) nanoassemblies and polymeri
105 the edge and basal-plane sites of monolayer molybdenum disulfide (MoS2 ) synthesized by chemical vap
106 lable fabrication of a large array of hybrid molybdenum disulfide (MoS2) - silicon dioxide (SiO2) one
107 ntrol over large area growth of high quality molybdenum disulfide (MoS2) and other types of 2D dichal
108 nsition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2)
109 us demonstrate thickness sorting of pristine molybdenum disulfide (MoS2) by employing a block copolym
110 ortant use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel het
116 ther two-dimensional semiconducting material molybdenum disulfide (MoS2) is also known as light- sens
119 (sharp tip and flat punch, respectively) on molybdenum disulfide (MoS2) multi-walled nanotubes (MWNT
120 tems in numerous environmental applications, molybdenum disulfide (MoS2) nanosheets stand out as a pr
121 iated nanosheets of two-dimensional metallic molybdenum disulfide (MoS2) on thin plastic substrates c
122 report on flexible and wavelength-selective molybdenum disulfide (MoS2) phototransistors using monol
123 mechanical resonators based on exfoliated 2D molybdenum disulfide (MoS2) structures, and focus on inv
124 tial of the applicability of two-dimensional molybdenum disulfide (MoS2) structures, in various elect
126 observation of the elastic deformation of 2D molybdenum disulfide (MoS2) thin films using an ordinary
127 perties of metallic (1T phase) nanosheets of molybdenum disulfide (MoS2) through covalent chemical fu
129 mbine these two advantages and demonstrate a molybdenum disulfide (MoS2) two-dimensional steep-slope
130 )-vacancies created on the basal plane of 2H-molybdenum disulfide (MoS2) using argon plasma exposure
131 rphous nickel-cobalt complexes with 1T phase molybdenum disulfide (MoS2) via hydrazine-induced phase
132 l edge states of a single atomic membrane of molybdenum disulfide (MoS2), a transition metal dichalco
134 led fabrication of quantum dots in monolayer molybdenum disulfide (MoS2), and quantum dot arrays with
135 conductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from t
136 l-semiconductor interface, as in gold (Au) - molybdenum disulfide (MoS2), is of great interest from t
137 monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe
138 stics of atomically thin sheets of graphene, molybdenum disulfide (MoS2), niobium diselenide, and hex
139 these properties of monolayer TMDs, such as molybdenum disulfide (MoS2), on standard Si-based substr
144 sensing platform for the first time based on molybdenum disulfide nanoparticles (nMoS(2)NPs) deposite
145 ly used gold nanoparticles when supported on molybdenum disulfide nanoribbons matrix (MoS2 NRs-Au NPs
146 ing-induced manufacturing of two-dimensional molybdenum disulfide nanosheets into a three-dimensional
147 ssisted strategy for the synthesis of narrow molybdenum disulfide nanosheets with edge-terminated str
148 roscopy studies reveal that the single-layer molybdenum disulfide nucleates at the graphene edges.
149 orrelation technique, we show that monolayer molybdenum disulfide photodetector can have intrinsic re
150 self-assembled on reduced graphene oxide and molybdenum disulfide (rGO/MoS(2)) modified screen-printe
151 ature and nitrogen sensor based on few-layer molybdenum disulfide sheets (FLMS), which was developed
152 ch, where MoOx/MoS2 core-shell nanowires and molybdenum disulfide sheets are exposed to dilute aqueou
154 mainly on synthesizing highly nanostructured molybdenum disulfide that allows the exposure of a large
155 abricate arrays of hybrid superlattices with molybdenum disulfide that could be used in electrical ca
156 Owing to improved contacts, short-channel molybdenum disulfide transistors show current saturation
157 n single flakes of atomically thin CVD-grown molybdenum disulfide, using non-degenerate femtosecond p
158 trates the validity of multiscale control in molybdenum disulfide via overall consideration of the ma
159 stigating the hydrogen evolution reaction on molybdenum disulfide, where it is shown that the basal p
160 functional theory calculations indicate that molybdenum disulfide with moderate cobalt doping content