ライフサイエンスコーパス: nanowire

1 f well-defined length along a single silicon nanowire.

2 based on a single compositionally engineered nanowire.

3 asured photocurrents along the length of the nanowire.

4 of magnitude larger than that in a circular nanowire.

5 istence of Majorana modes at the ends of the nanowire.

6 erpendicular to the longitudinal axis of the nanowire.

7 the DW shape during the rotation around the nanowire.

8 grow high-quality, dense and long Ga(2)O(3) nanowires.

9 s of widespread interest for applications as nanowires.

10 ls (~1-2 nm) with random orientations inside nanowires.

11 uses a chiral structure in the van der Waals nanowires.

12 tip-to-tail "nanosoldering" of the germanium nanowires.

13 reducing agent formed kinetically preferred nanowires.

14 twist rates are defined by the radii of the nanowires.

15 importance of OmcS to conductivity in these nanowires.

16 ements of lasing from lead halide perovskite nanowires.

17 less surface states in topological insulator nanowires.

18 crystalline aluminum, copper, silver and tin nanowires.

19 y initiated from nano-voids among individual nanowires.

20 he size-dependent material properties of ZnO nanowires.

21 of bioelectric interfaces with semiconductor nanowires.

22 d in the interlayer moire registry along the nanowires.

23 es and circuits from synthetic semiconductor nanowires.

24 are formed by random self-assembly of silver nanowires.

25 nowires and by surface diffusion for thicker nanowires.

26 thways of material transport into the planar nanowires.

27 o define the orientation and polarity of the nanowires.

28 lts to be different for planar vs. nonplanar nanowires.

29 the growth kinetics of surface-guided planar nanowires.

30 nanotubes, Si nanowires, conductive polymer nanowires, 1D metal oxides, and others) and 2D (e.g. gra

31 a zero modes in superconductor-semiconductor nanowires(3-8).

32 Consequently, the integrated polymer nanowire-AAO hybrid film exhibits the state-of-the-art c

33 oduced a high density of states (DOS) in the nanowire above the Fermi level in close proximity to the

34 ter synthesis in which junctions between two nanowires act as resistive switches, often compared with

35 g polyethylene glycol (PEG) hydrogel, silver nanowires (AgNW), and reduced graphene oxide (rGO).

36 networks (CTNs) composed of metallic silver nanowires (AgNWs) for flexible touchscreen displays rais

37 pproach, we map the surface temperature of a nanowire and an embedded micro-heater on the same chip w

38 ulator-to-metal transition in a single VO(2) nanowire and probe the ensuing electronic dynamics with

39 shed by the Gibbs-Thomson effect for thinner nanowires and by surface diffusion for thicker nanowires

40 sional conductive materials such as metallic nanowires and carbon nanotubes in an elastomer matrix to

41 of bioelectric interfaces with semiconductor nanowires and comment on both material choice and device

42 e synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely c

43 damental concepts essential to understanding nanowires and photoelectrochemistry, the review consider

44 The interaction between ZnO nanowires and the matrix is simulated using a properly d

45 Ultra-long metal nanowires and their facile fabrication have been long so

46 The influence of density on these Ga(2)O(3) nanowires and their properties will be examined in order

47 ght several important, endogenous biological nanowires and use these as a framework to categorize sem

48 ybridize cardiac myofibroblasts with silicon nanowires and use these engineered hybrids to synchroniz

49 e.g., nanoparticles, nanorods, nanocubes and nanowires) and controlled crystal phases (e.g., cubic, t

50 enerates an optical torque that orients each nanowire, and subsequent trapping of aligned nanowires e

51 and conductive inks of Ag nanoparticles, Ag nanowires, and carbon nanotubes.

52 out 3 times higher than that of primitive Cu nanowires, and even surpasses the most efficient catalys

53 varied morphologies including nanoparticles, nanowires, and nanoplates are reported.

54 nal (1D) single and double helix structures, nanowires, and two-dimensional (2D) phosphorene allotrop

55 sis for the realization of highly controlled nanowires, and we combine this perspective with one of h

56 on unusual materials such as liquid metals, nanowires, and woven textiles or on optimally configured

57 hermal conductivity of the amorphous silicon nanowire appears length-independence with length ranging

58 Semiconductor nanowires are a particularly promising class of syntheti

59 ls that, rather than PilA, G. sulfurreducens nanowires are assembled by micrometer-long polymerizatio

60 However, ultra-long metal ultrafine/nanowires are beyond the capability of current manufactu

61 Silver nanowires are coated with a polymer layer after synthesi

62 e, where uniformly cross-linked beta alumina nanowires are compactly coated by a poly(vinylidene fluo

63 While intrinsic nanowires are diamagnetic over the temperature range 5-3

64 ieve high imaging resolution when individual nanowires are electrically addressed.

65 Images of uniform and upright nanowires are fascinating, but often, they are quite puz

66 Nanowires are filamentary crystals with a tailored diame

67 Semiconductor nanowires are ideal for realizing various low-dimensiona

68 al semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have

69 Solution grown ZnO nanowires are partially converted to ZnS, then desulfuri

70 erein, ruthenium and nitrogen codoped carbon nanowires are prepared as effective hydrogen evolution c

71 electric properties of polycrystalline metal nanowires are related to grain structure, although direc

72 brid films composed of ferroelectric polymer nanowire array and anodic aluminum oxide (AAO) membrane

73 he prepared Au(L-cysteine)-Pt(penicillinase) nanowire array electrode showed simultaneous detection a

74 The vertically aligned Pt-Au nanowire array has been prepared by an electrodeposition

75 crystallization of the polymer, the polymer nanowire array shows substantially enhanced ECE that is

76 pe is developed, combined with a gold-capped nanowire array, to measure the biointeractions in microf

77 wire arrays, and hierarchical and mesoporous nanowire arrays is reviewed with a focus on the interpla

78 rategies developed for creating well-ordered nanowire arrays with controlled spatial position, orient

79 lline nanotube arrays, 1D single-crystalline nanowire arrays, and hierarchical and mesoporous nanowir

80 icle-loaded stem cells and bacteriophage bio-nanowires as a photosensitizer carrier, as well as integ

81 method of growing high-density gallium oxide nanowires at high temperatures.

82 g the anomalously slow growth kinetics of Si nanowires at low temperature.

83 shed new light to design innovative silicon nanowire based devices.

84 e as a framework to categorize semiconductor nanowire-based biointerfaces.

85 of antibody protein immobilized on a silicon nanowire-based chip for their antigens detection is repo

86 ults are equally applicable to nanotube- and nanowire-based FETs, oxide semiconductors, and organic-m

87 ng a uranyl-binding aptamer-modified silicon nanowire-based field-effect transistor (SiNW-FET) biosen

88 Additionally, the optical antenna effect of nanowire-based QDHSCs can further enhance the absorption

89 radius) objects in the near-field region of nanowire-based sensors across a 726-mum x 582-mum field

90 n-dissociation detection approach on silicon nanowires-based field-effect transistor arrays, by creat

91 polarized emission from the chiral polymeric nanowire becomes more pronounced, where the g factor inc

92 Here, we report that a material property, nanowire-bending stiffness that is a function of diamete

93 manipulate, align, and assemble metal-seeded nanowire building blocks in a range of organic solvents.

94 vices and integrated circuits assembled from nanowire building blocks, as well as a unique design of

95 les a scalable production of ultralong metal nanowires, but also serves for widespread applications i

96 by fluid instabilities with thermally drawn nanowires can be alleviated by adding tungsten carbide n

97 ve with one of how the different families of nanowires can contribute to applications.

98 etals (e.g., Au nanoparticles, Ag flakes, Cu nanowires), carbon nanotubes/nanofibers, 2D conductors (

99 sis on inks based on metal nanoparticles and nanowires, carbon nanotubes, and graphene sheets.

100 Among them, the Cu(68)Ag(32) nanowire catalyst achieves the highest activity and sele

101 cal voltages is possible because the protein nanowires catalyze metallization.

102 brication and investigation of single TiO(2)-nanowire/CdSe-QD heterojunction solar cell (QDHSC) using

103 irms that at low strains micro-voids between nanowire clusters guide the process of crack growth, whe

104 particle re-orientation and coalescence, the nanowires collapse into ordered UO(2) nanoclusters.

105 These beta alumina nanowires combined with the gel polymer layer create den

106 We estimate that a hypothetical "nanowire" composed of crystalline STC with a cross-secti

107 1D (e.g. carbon nanotubes, Si nanowires, conductive polymer nanowires, 1D metal oxides

108 onducting shell surrounding a semiconducting nanowire core.

109 esigned to mimic the structure of biological nanowires could also incorporate similar functional prop

110 The decrease in the nanowire cross-section area yields a DW behavior similar

111 elocity depend on the number of sides of the nanowire cross-section, being the DW velocity in a wire

112 that controlling the surface oxidation of Cu nanowires (CuNWs) can greatly improve their C(2+) select

113 A lightweight, 3D Cu nanowire current collector with a phosphidation gradient

114 HET kinetics ([Formula: see text]) at MoO(2) nanowire decorated monolayer graphene sheets, when edge

115 Nanowire hydrogen bronzes of WO(3) nanowires decorated with Pd (Pd/H(y)WO(3-x)) were previo

116 Nanowires, defined as one-dimensional nanostructures, ex

117 The V(2)O(5) nanowires deliver an initial discharge/charge capacity o

118 a single-element propagating superconducting nanowire detector of ultraslow-velocity for mapping the

119 III-V semiconductor nanowires deterministically placed on top of silicon ele

120 t, and direct synthesis of multiplexed metal nanowire devices for nanoelectronic applications.

121 tion of a variety of electronic and photonic nanowire devices, allowing for the formation of well-def

122 Modulation of the nanowire diameter creates a cylindrical sawtooth geometr

123 ctured pores (size 200-300 nm) consisting of nanowires (diameter 12 nm), the SWING filters exhibit hi

124 We have synthesized four types of nanowires (differing in diameter) that might be used for

125 These remodeled, n-type nanowires display extremely high power factors (~500 uW

126 A diphenyl trisulfide-selenium nanowire (DPTS-Se) organic-inorganic hybrid cathode mate

127 gration into nanoelectronics as a biological nanowire due to its linear geometry, definable base sequ

128 anowires (SiNWs) in an electrolyte-insulator-nanowire (EIN) structure.

129 nstrated the successful fabrication of metal nanowire electronic devices, while multiscale characteri

130 erties to define the material foundation for nanowire electronics.

131 in 10 ms of each other onto the surface of a nanowire EM grid, and the mixing reaction stops when the

132 ng platform based on vertically aligned gold nanowires embedded in PDMS (v-AuNWs/PDMS).

133 tial for greatest impact using semiconductor nanowire-enabled biointerfaces in the future.

134 nanowire, and subsequent trapping of aligned nanowires enables deterministic fabrication of arbitrari

135 hermally conducting channels for the polymer nanowires, enabling the efficient transfer of cooling en

136 Experimental ZnO nanowires enhanced SFFTs are performed on the fabricated

137 The AlInN nanowires exhibit a high internal quantum efficiency of

138 Compared to thin films, nanowires exhibit a higher surface-to-volume ratio, incr

139 the temperature range 5-300 K, the Te-doped nanowires exhibit ferromagnetic behavior with the easy a

140 transport of Fe(4+delta)Se(5) single-crystal nanowires exhibiting 5 x 5 Fe-vacancy order and mixed va

141 Nanowire fabrication along the edge plane like- sites/de

142 CVD grown monolayer graphene prior and post nanowire fabrication reveals key understandings into the

143 Potentiometric sensors based on silicon nanowire field effect transistors (SiNW FETs) typically

144 -to-metal transformation to realize scalable nanowire field-effect transistor probe arrays with contr

145 a particularly promising class of synthetic nanowires for biointerfaces, given (1) their unique opti

146 elp readers evaluate the salient features of nanowires for photoelectrochemical applications, promoti

147 ontinuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale elect

148 talyst that is strongly anchored on a robust nanowire forest of mesoporous rutile titania grown on th

149 and materials that can be synthesized in the nanowire form.

150 The effect of ZnO nanowires geometries on the interfacial shear strength o

151 uctive nanomaterials composed of either gold nanowires, gold nanoparticles or carbon nanotubes.

152 screw dislocations are first introduced into nanowires growing along the stacking direction, yielding

153 for surface-guided Au-catalyzed ZnSe and ZnS nanowires growing on both flat and faceted sapphire surf

154 through a specific example - the case of ZnO nanowires grown on silicon oxide.

155 er, understanding of and control over planar nanowire growth are still limited.

156 Gallium oxide nanowire growth can be achieved by heating and oxidizing

157 This mechanism of planar nanowire growth can be extended to a broad range of mate

158 of liquid Ga in contact with solid GaAs in a nanowire growth configuration.

159 ities, imparting good controllability to the nanowire growth in a manner akin to Czochralski crystal

160 se data are compared with those of nonplanar nanowire growth under similar conditions.

161 usive memristor, fabricated from the protein nanowires harvested from the bacterium Geobacter sulfurr

162 ducens protein filaments, known as microbial nanowires, has been invoked to explain a wide range of g

163 Semiconductor nanowires have attracted extensive interest as one of th

164 Semiconductor nanowires have been playing a crucial role in the develo

165 Hybrid semiconductor-superconductor nanowires have emerged as a promising platform for reali

166 n nanotubes, graphene nanoribbons and dopant nanowires have potential as electrodes for discrete nano

167 erization, specifically carbon nanotubes and nanowires, have had major contributions in the developme

168 trategy to access various linearly segmented nanowire heterojunctions with controlled dimensions usin

169 ntrol of various semiconductor nanowires and nanowire heterostructures with precisely controlled phys

170 Nanowire hydrogen bronzes of WO(3) nanowires decorated w

171 ) electrical polarization of a semiconductor nanowire in aqueous suspension.

172 The optimized NiO(x) membrane on vertical Si nanowire in the EIN structure shows a good drift rate of

173 We present the synthesis of metal nanowires in a multiplexed device configuration using si

174 ored nanostructure composed of porous carbon nanowires in an array as a SERS substrate to overcome al

175 ignment direction and speed of semiconductor nanowires in an external electric field with simple visi

176 ose a viable route to fabricating stable DNA nanowires in cell-free and synthetic biological systems

177 s on silicon and for the organized growth of nanowires in other material systems.

178 his article reviews the use of semiconductor nanowires in photoelectrochemistry.

179 rray, some new characteristics of the 3D ITO nanowires in solar cells, sensors, micro-lasers and flex

180 tical characterization of the beta-Ga(2)O(3) nanowires including the optical bandgap and photoconduct

181 terns are realized along a helical path on a nanowire instead of a planar interface.

182 The nanowire is configured as an electromechanical resonator

183 The monolithic growth of site-controlled nanowires is a prerequisite toward the next generation o

184 transport, and the density of states of such nanowires is also expected to show Aharonov-Bohm oscilla

185 the domain wall (DW) dynamics along magnetic nanowires is crucial for spintronic applications.

186 his work, a type of organic chiral polymeric nanowires is designed with strong chirality induced orbi

187 n of ferromagnetism in these Te-doped GaAsSb nanowires is discussed on the basis of d(0) ferromagneti

188 that the observed embrittlement in metallic nanowires is governed by the hydrogen-induced suppressio

189 s reproduces the relation between individual nanowire junctions switching events with current pathway

190 ally repeating bismuth-nanocrystal/germanium-nanowire junctions.

191 hus underlining the significant potential of nanowire laser arrays for ultra-high frequency on-chip s

192 ability in an array of two laterally-coupled nanowire lasers in terms of their separation, difference

193 partial reduction reaction on hollow TiO(2) nanowires leads to the introduction of parts per million

194 insights of photoelectrochemistry at single-nanowire level?

195 the first axial AlInN ultraviolet core-shell nanowire light-emitting diodes with highly stable emissi

196 anostructure comprising arrays of dielectric nanowires, made of silicon and indium tin oxide, is reve

197 Integration of conductive nanowire meshes within these fiber-based muscles offers

198 low-cost platform for capturing CTCs, the Si nanowires/microscale pyramids (NWs/MPs) hierarchical sub

199 rical retina made of a high-density array of nanowires mimicking the photoreceptors on a human retina

200 Metal nanowire (MNW)-based transparent electrode technologies

201 high aspect ratio nanoparticles, or magnetic nanowires (MNWs), are characterized using first-order re

202 Assisted by nanowire-modified electrodes, locally enhanced electric

203 of EEF were secondly immobilized on silicon-nanowires (n = 1000) and the field effects were measured

204 l design (quantum dots/wires, nanoparticles, nanowires, nano- or microbelts, few-layered nanosheets,

205 ry; hence, immunoFETs based on nano devices (nanowire, nanobelts, carbon nanotube, etc.) are not trea

206 Due to the advantages of the hybrid nanowire/nanoparticle array structure, this new sensor c

207 an electrochemical biosensor based on hybrid nanowire/nanoparticle array with various bio-molecular r

208 stochastic-mediated breakdown of individual nanowire-nanowire junctions and the onset of different c

209 It has been proved that this 3D ITO nanowire network can be used as a transparent conductive

210 A 3D ITO nanowire network with high quality by using polystyrene

211 Such 3D ITO nanowire networks could be fabricated directly on micro-

212 -local charge parity states of semiconductor nanowire networks in the topological superconductor regi

213 emergent dynamics shown by polymer-coated Ag nanowire networks places this system in the class of opt

214 ogy-based semiconductor detector using cross-nanowire networks that records the full polarization sta

215 tor (EIS) structures as well as silicon (Si) nanowire (NW) field-effect transistors (FETs) covered wi

216 ent coupling of optical power from a silicon nanowire (NW) to an optical fibre is challenging for bot

217 erein a periodically ordered nick-hidden DNA nanowire (NW) with high serum stability and active targe

218 We combine one-dimensional (1D) nanowires (NWs) and 2D graphene flakes grown out-of-plan

219 and using the similarities between sub-1 nm nanowires (NWs) and linear polymers, we successfully fab

220 ork, we investigate both one-dimensional ZnO nanowires (NWs) and two-dimensional nanosheets (NSs) for

221 Here we use metallic nanowires (NWs) as a platform to study hydrogen embrittl

222 Semiconductor nanowires (NWs) capped with metal nanoparticles (NPs) sh

223 properties of ZrTe(5), we fabricated ZrTe(5) nanowires (NWs) devices, with much larger surface-to-vol

224 pite recent progress in producing perovskite nanowires (NWs) for optoelectronics, it remains challeng

225 in nanostructures, among which semiconductor nanowires (NWs) have served both as an important platfor

226 f-catalysed (SC), zinc blende (ZB) dominant, nanowires (NWs) is crucial for the development of functi

227 Semiconductor nanowires (NWs) make ideal photodetectors as their optic

228 Essentially, Cu(2) Se nanowires (NWs) of micrometer-scale lengths and about 10

229 eparing ultrathin PtNiM (M = Rh, Os, and Ir) nanowires (NWs) with excellent anti-CO-poisoning ability

230 high specific strength ceramic nanofibers or nanowires (NWs) with high aspect ratios.

231 to interrogate single, high aspect ratio Au nanowires (NWs).

232 It is widely accepted that growth of nanowires occurs on a layer-by-layer basis, starting at

233 ing the near-field dynamics of an individual nanowire of VO(2), we observe that ultrafast photo-dopin

234 In vapour-liquid-solid growth, nanowires of germanium(II) sulfide, an anisotropic layer

235 monstrate a class of materials-van der Waals nanowires of layered crystals-in which a tunable interla

236 Using nanowires of two archetypal Mott insulators-VO(2) and V(

237 electron acceptor F4TCNQ p-dopes aggregates "nanowires" of poly(3-hexylthiophene) in nonpolar solvent

238 Surface-guided growth of planar nanowires offers the possibility to control their positi

239 which are made via spray printing of silver nanowires on multiscale porous SEBS substrates.

240 n a path toward scalable qubit devices using nanowires on silicon.

241 can be improved up to 99% after growing ZnO nanowires on the fiber.

242 he latter is present either along the entire nanowire or solely in the central or terminal segments.

243 d during or after endocytosis, while thicker nanowires puncture the enclosing membrane and release si

244 ps lead to the formation of Ag nanocubes and nanowires respectively, indicating the faster reducing a

245 ng of Au nanoparticles was applied on the Pt nanowire segments, and then the penicillinase was immobi

246 Silicon nanowires (Si NWs) are the most promising candidates for

247 st time optical readout of a superconducting nanowire single-photon detector (SNSPD) directly coupled

248 sion spectrometer based on a superconducting nanowire single-photon detector, we observed the dynamic

249 ted microfluidic channel on a p-type silicon nanowire (SiNW) array measured by a multiplexed electric

250 ocedure for the functionalization of silicon nanowire (SiNW) is applied in biological field effect tr

251 x) membrane on chemically etched vertical Si nanowires (SiNWs) in an electrolyte-insulator-nanowire (

252 simulations show that the simplified single nanowire solar cell structure can minimize the interface

253 derstanding, we find that vertical growth of nanowires starts at the oxide-substrate line interface,

254 ), largely outperforming state-of-the-art Si-nanowire strain sensors and even piezoresistive, piezoel

255 his work provides evidence for a transient U nanowire structure that may have implications for uraniu

256 e orbital angular momentum in helical chiral nanowire structures can be suppressed by inhibiting elec

257 High-aspect-ratio biological nanowires, such as bacterial pili and neurites, mediate

258 s design strategies for engineering improved nanowires suitable for future bioelectronic materials.

259 in reduced nonradiative recombination on the nanowire surface.

260 flection of quasi-ballistic electrons at the nanowire surface.

261 ncy sites with 5 or 6 oxygen ions on titania nanowire surfaces.

262 Further radial growth of those twisted nanowires that are attached to the substrate leads to an

263 ion and the twist are tunable by varying the nanowire thickness.

264 l as a unique design of solution-processable nanowire thin-film transistors for high-performance larg

265 characterized internally-functionalized DNA nanowires through non-canonical, Ag(+)-mediated base pai

266 u nanoparticle underlayer and anatase TiO(2) nanowires (TNW) onto the FTO substrate, followed by deco

267 uses a hierarchical assembly of interfacial nanowires to retard penetrating cracking.

268 These observations imply that the silicon nanowires together with the application of (max)EEF(oa)

269 by combining deterministic shape-controlled nanowire transfer with spatially defined semiconductor-t

270 tal electronic properties and various single nanowire transistor concepts.

271 The findings should also apply to nanowire transistors, leading to new low-power, robust d

272 s, metal nanoparticles, polymers, nanotubes, nanowires, two-dimensional layered materials and van der

273 n techniques, we found that the Cu(68)Ag(32) nanowires underwent an irreversible structural reconstru

274 Edge plane decoration of MoO(2) nanowires upon monolayer graphene is observed via electr

275 (2) How are nanowires utilized for photoelectrochemical half reactio

276 d that vertically aligned mushroom-like gold nanowires (v-AuNW) could serve as stretchable and wearab

277 erization of topological phase in Bi(2)Se(3) nanowire via nanomechanical resonance measurements.

278 is made by anchoring Au nanoparticles on Cu nanowires via 4,4'-bipyridine (bipy).

279 face diffusion of precursor adatoms over the nanowire walls, planar growth is dominated by surface di

280 pe to probe EuS islands grown on top of gold nanowires, we observe two well-separated zero-bias tunne

281 These nanowires were previously thought to be type IV pili com

282 Orthorhombic V(2)O(5) nanowires were successfully synthesized via a hydrotherm

283 imilar to the one presented in a cylindrical nanowire, which is explained using an analytical model b

284 st appropriate phase separation with uniform nanowires, which forms favorable interpenetrating networ

285 ransportation channels through and along the nanowires, which promote uniform sodium deposition and f

286 ns at room temperature using a semiconductor nanowire with precisely engineered asymmetry.

287 It consists of an n-doped InAs nanowire with unpaired-spin surface states, that is prox

288 l and also segmented coaxial B-A-B and A-B-A nanowires with a solvophilic poly(ethylene glycol) (PEG)

289 The vertical Si nanowires with approximately 17 mum length and polycryst

290 The nanowires with both solid-state donor and acceptor block

291 Intrinsic and Te-doped GaAsSb nanowires with diameters ~100-120 nm were grown on a p-t

292 phson radiation frequency in indium arsenide nanowires with epitaxial aluminium shells.

293 ions: (1) How can we interface semiconductor nanowires with other building blocks for enhanced photoe

294 re we probe lasing from CsPbBr(3) perovskite nanowires with picosecond (ps) time resolution and show

295 d analysis of the transverse DW motion along nanowires with polygonal cross-sections.

296 Herein, we study a model system of copper nanowires with various degrees of silver modifications a

297 within single-digit millisecond time scales, nanowires with widths smaller than 175 nanometers over a

298 bed in this review is compound semiconductor nanowires, with the materials covered limited to III-V m

299 which gives a clear route for maximizing the nanowire yield in the self-catalyzed growth fashion.

300 er-based EIS biosensors featuring zinc oxide nanowires (ZnO NWs) directly grown on working electrodes