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1 ch as the III-V materials typically used for optoelectronics).
2 tial for application to electrically tunable optoelectronics.
3 ve optical properties and great potential in optoelectronics.
4 aterials to complement graphene for advanced optoelectronics.
5 raft other solution-printed perovskite-based optoelectronics.
6 ing intensity of light in displays and other optoelectronics.
7  their applications in solar cells and other optoelectronics.
8 As is of primary importance to space applied optoelectronics.
9 nductors offering new strategies for quantum optoelectronics.
10  emergence of a new field of research coined optoelectronics.
11 mising properties for near- and mid-infrared optoelectronics.
12 of key importance to enable high-performance optoelectronics.
13 key cross-cutting issue in photovoltaics and optoelectronics.
14 ry, anion sensing, photodynamic therapy, and optoelectronics.
15 mising applications in the area of terahertz optoelectronics.
16 f heterogeneously integrated electronics and optoelectronics.
17 d its applications, e.g., in spintronics and optoelectronics.
18 or emergent technologies beyond conventional optoelectronics.
19 pealing candidates for quantum computing and optoelectronics.
20 promising candidates for nanoelectronics and optoelectronics.
21 ductors with applications in electronics and optoelectronics.
22 carriers may enable the development of novel optoelectronics.
23 rest for energy storage, nanoelectronics and optoelectronics.
24 promising building blocks for new generation optoelectronics.
25  potential applications in nanophotonics and optoelectronics.
26 e dynamics, is a major need in photonics and optoelectronics.
27 lications such as in bioimaging, sensing, or optoelectronics.
28 rties for potential applications in flexible optoelectronics.
29  indirect bandgap limits the applications in optoelectronics.
30 s, including gas separations, catalysis, and optoelectronics.
31  transient or implantable bioelectronics and optoelectronics.
32 uble perovskites for photovoltaics and other optoelectronics.
33    Our results may blaze a trail to PHz-rate optoelectronics.
34 locks for applications in photocatalysis and optoelectronics.
35 e spacing compatible with high-speed silicon optoelectronics.
36 ke membranes, sensors, molecular sieves, and optoelectronics.
37 ssential for next-generation electronics and optoelectronics.
38 anic semiconductor with potential in organic optoelectronics.
39 ind exciting applications in electronics and optoelectronics.
40 ms forms the basis of modern electronics and optoelectronics.
41 miconducting transport hamper application in optoelectronics.
42 hly efficient cathode interlayers in organic optoelectronics.
43 ed to be feasible for future electronics and optoelectronics.
44 ng potential applications in electronics and optoelectronics.
45 ls could have in fields like biomedicine and optoelectronics.
46 on are foundations of modern electronics and optoelectronics.
47 or atomically thin, flexible and transparent optoelectronics.
48  applications ranging from photochemistry to optoelectronics.
49 towards achieving functional electronics and optoelectronics.
50 n carrier in next-generation electronics and optoelectronics.
51 detection, water monitoring, and sustainable optoelectronics.
52 al layers play a key role in electronics and optoelectronics.
53 ing performance of prior nanostructure-based optoelectronics.
54 ioprobes and tunable/stretchable electronics/optoelectronics.
55 nformation technology, materials science and optoelectronics.
56  them is critical for future electronics and optoelectronics.
57 the semi-metallic graphene is attractive for optoelectronics.
58 eposition of quantum-confined thin films for optoelectronics.
59 ncy performance of photoconductive terahertz optoelectronics.
60  ultrathin, high-performance electronics and optoelectronics.
61 g material system for future electronics and optoelectronics.
62 hindered by attributes of existing terahertz optoelectronics.
63 gh-throughput processing of quantum-dot (QD) optoelectronics.
64 us building blocks of modern electronics and optoelectronics.
65 cations of plasmonic polymers in sensing and optoelectronics.
66 engineered architectures for applications in optoelectronics.
67 ide is crucial to the performance of organic optoelectronics.
68 lectrical charge for efficient near-infrared optoelectronics.
69  layers of thin TMDCs in nanoelectronics and optoelectronics.
70 r application in the general area of organic optoelectronics.
71  considered as a very promising material for optoelectronics.
72 pects for future advances in electronics and optoelectronics.
73 m information processing and integrated nano-optoelectronics.
74 as of catalysis, astrochemistry, and organic optoelectronics.
75 ctly in core/shell PNCs for high-performance optoelectronics.
76 ultifunctional materials for electronics and optoelectronics.
77 adio-frequency electronics and most forms of optoelectronics.
78 ir potential applications in electronics and optoelectronics.
79 e for application in next-generation organic optoelectronics.
80 e towards GO-based thin-film electronics and optoelectronics.
81 integrated circuits, medical diagnostics and optoelectronics.
82  for new applications in infrared optics and optoelectronics.
83  new pathways towards spin-dependent quantum optoelectronics.
84 est new strategies for achieving 'invisible' optoelectronics.
85 ey criterion for applications such as chiral optoelectronics.
86 f the critical building blocks for nanoscale optoelectronics.
87 ns the established technology for integrated optoelectronics.
88 ions in high-speed, high-efficiency infrared optoelectronics.
89 cessing is critical for the manufacturing of optoelectronics.
90 uilding blocks for nanoscale electronics and optoelectronics.
91 InP) nanowires to define their potential for optoelectronics.
92 ble for advancing next-generation integrated optoelectronics.
93 emiconductive materials with applications in optoelectronics.
94 hyperpolarizability, suggesting potential in optoelectronics.
95 ng of which promises applications in quantum optoelectronics.
96 ch has importance for future applications in optoelectronics.
97 gy pathways in functional nanostructures for optoelectronics.
98 id-state light emitters, photocatalysis, and optoelectronics.
99 ites have achieved impressive performance in optoelectronics.
100 rtant considering their unique advantages in optoelectronics.
101 r electronics, sensors, quantum devices, and optoelectronics.
102 monstration, of metal-free halide perovskite optoelectronics.
103 ble 2D HOIPs with potential applications for optoelectronics.
104 ential of 2D perovskites for next-generation optoelectronics.
105 found interest for nanoscale electronics and optoelectronics.
106 ding spectroscopy, sensing, metasurfaces and optoelectronics.
107 ications in high-performance electronics and optoelectronics.
108 s with potential use in the field of organic optoelectronics.
109  novel candidates for the next generation of optoelectronics.
110  expand applications of TIs in photonics and optoelectronics.
111 haracteristics desirable in high-performance optoelectronics.
112 nological developments in on-chip integrated optoelectronics.
113 ch as radical magnetoelectrics, magnets, and optoelectronics.
114 tions in novel near-infrared electronics and optoelectronics.
115 medical devices and microrobotics to tunable optoelectronics.
116 s of 2D materials for future electronics and optoelectronics.
117 pplications in the fields of electronics and optoelectronics.
118 re essential for high-performance integrated optoelectronics.
119 -gap semiconductors play the central role in optoelectronics.
120 the development of the better performance of optoelectronics.
121 horus applications in infrared photonics and optoelectronics.
122 ndidates for applications in electronics and optoelectronics(1-3), are still limited by their low ele
123 orm the foundation of modern electronics and optoelectronics(1-7).
124  to their applications in light emission(1), optoelectronics(2,3), photon frequency conversion(4,5) a
125 lities are key to ultrafast lightwave driven optoelectronics, allowing petahertz scaling manipulation
126 catalysis, electrochemistry, electronics and optoelectronics, among others) as well as for the prepar
127 anostructures with colloidal materials-based optoelectronics and access a new level of light manipula
128 neering in Mo(1-x)WxSe2 alloy monolayers for optoelectronics and applications based on spin- and vall
129 erials are promising candidates for advanced optoelectronics and are used in light-emitting diodes an
130 ions in 2D beam steering, spectrum scanning, optoelectronics and beyond.
131 proach to controllably alter GO band gap for optoelectronics and bio-sensing applications.
132 ntageous in potential nanoscale electronics, optoelectronics and biochemical-sensing applications.
133 h applications in very diverse areas such as optoelectronics and biotechnology.
134 e, which makes GO an attractive material for optoelectronics and biotechnology.
135 en key to its widespread adoption in organic optoelectronics and biotechnology.
136 r potential application in photovoltaics and optoelectronics and by the fundamental science behind th
137  chemical properties, with the corresponding optoelectronics and catalysis application being actively
138  have a potential to be employed in sensing, optoelectronics and catalysis.
139 2)Te(3) hold great potential applications in optoelectronics and chemical sensing.
140  promise as flexible electrodes for wearable optoelectronics and energy devices-exemplified by its us
141 ary materials recently generated interest in optoelectronics and energy-related applications, alongsi
142 opportunities for exploring condensate-based optoelectronics and exciton-mediated high-temperature su
143 imensional layered crystal that is ideal for optoelectronics and flexible devices.
144 development of Ga(2)O(3) devices and advance optoelectronics and high-power devices.
145 e a broad range of potential applications in optoelectronics and imaging, but their photon-conversion
146 sign the next generation of high-performance optoelectronics and integrated flexible circuits by opti
147 can enable novel two-dimensional devices for optoelectronics and light harvesting.
148 wo dimensional materials for applications in optoelectronics and nanoelectronic devices.
149 te materials, chemical sensing, biomedicine, optoelectronics and nanoelectronics.
150 eteronanostructures emerging in the field of optoelectronics and nanophotonics.
151 otential for thin-film electronics, infrared optoelectronics and novel devices in which anisotropic p
152 active, layered materials promising for fast optoelectronics and on-chip photonics.
153  properties applicable to different kinds of optoelectronics and photonic devices.
154 ally thin black phosphorus shows promise for optoelectronics and photonics, yet its instability under
155 edicine and current applications in enhanced optoelectronics and photovoltaics.
156 ng in 2D Dirac materials for long-wavelength optoelectronics and plasmonics.
157 facilitated its move to the forefront of the optoelectronics and power-electronics industries.
158  control of TSQD band structure for infrared optoelectronics and quantum optics applications.
159                             An advantage for optoelectronics and quantum source integration offered b
160  nanotubes (SWNTs) in order to broaden their optoelectronics and sensing applications has been a chal
161 cal transport, which is crucial in nanoscale optoelectronics and single-molecule electronics.
162 e recently attracted widespread attention in optoelectronics and solar cells.
163  be multimodal building blocks of integrated optoelectronics and spintronics systems.
164 ics of spins, with applications ranging from optoelectronics and spintronics, to quantum information
165 which are potentially useful in carbon-based optoelectronics and spintronics.
166 ental role in the future of nanoelectronics, optoelectronics and the assembly of novel ultrathin and
167 able the continued advancement of perovskite optoelectronics and to the improved reproducibility thro
168  gating, potentially finding applications in optoelectronics and valleytronics.
169 ronics, three-dimensional and/or curvilinear optoelectronics, and bio-integrated sensing and therapeu
170 dates as active nanomaterials for catalysis, optoelectronics, and biomedical applications.
171 n multiple fields, including quantum optics, optoelectronics, and biosensing.
172 er useful applications in energy conversion, optoelectronics, and catalysis.
173  for some applications, such as electronics, optoelectronics, and electrocatalysis, are also presente
174  fabricate suitable devices for electronics, optoelectronics, and energy conversion.
175 de range of fields such as microelectronics, optoelectronics, and energy storage.
176 e (MoS2) structures, in various electronics, optoelectronics, and flexible devices requires a fundame
177 n great potential for nanoscale electronics, optoelectronics, and photonics.
178 proving the performance of many electronics, optoelectronics, and photovoltaic devices.
179  photon emission, nonlinear beam generation, optoelectronics, and quantum computing.
180 ded networks such as drug delivery, sensing, optoelectronics, and semiconductor device fabrication.
181 eived applications, such as nanoelectronics, optoelectronics, and solar energy conversion, interfacin
182 ield effect transistors, low power switches, optoelectronics, and spintronics.
183  class of model nanomaterials for catalysis, optoelectronics, and the bottom-up assembly of true mole
184 w research paths in hybrid magneto-molecular optoelectronics, and the optical detection of spin physi
185 in flexible/stretchable electronics, organic optoelectronics, and wearable electronics.
186 e promising for a variety of electronics and optoelectronics applications but suffer from poor intrin
187 sing candidates for flexible and transparent optoelectronics applications due to their direct bandgap
188 to infrared suggest possible energy-variable optoelectronics applications in pressurized transition-m
189  interactions has important implications for optoelectronics applications of layered materials.
190 rmal management, high-power electronics, and optoelectronics applications.
191 egarded as a promising candidate for various optoelectronics applications.
192 ve feature of semiconductor quantum dots for optoelectronics applications.
193 c uniformity of thin-film solution-processed optoelectronics are believed to greatly affect device pe
194                        Strain-gated flexible optoelectronics are reported based on monolayer MoS2 .
195 w opportunities in textile photovoltaics and optoelectronics, as exemplified by their photovoltaic pr
196 and low densities, and they may be useful in optoelectronics, as photocatalysts, or in the removal of
197 potential of making energy-efficient quantum optoelectronics at designed correlated interfaces.
198 esign, may also be of general importance for optoelectronics-based energy technology.
199 d and observed, opening up opportunities for optoelectronics, bio-sensing and other mid-infrared appl
200 operties and their potential applications in optoelectronics, biological imaging and therapeutics, fl
201 potential applications of these materials in optoelectronics, biological imaging, and energy conversi
202 isciplines as diverse as tribology, geology, optoelectronics, biomechanics, fracture mechanics, and n
203 nsors, large area sensor array, and tailored optoelectronics, brought intensive research on next gene
204 antly broaden their applications not only in optoelectronics but also in bioimaging and biosensing.
205 erlattices are key building blocks in modern optoelectronics, but it is difficult to simultaneously r
206   Triplet excitons are ubiquitous in organic optoelectronics, but they are often an undesirable energ
207  silicon for next-generation electronics and optoelectronics; but its zero bandgap associated with Di
208 for use in 2D semiconductor LEFETs for novel optoelectronics capable of high efficiency, multifunctio
209 an integral part of modern electrocatalysis, optoelectronics, capacitors, metamaterials and memory de
210 riety of applications including electronics, optoelectronics, catalysis, and energy.
211 f the prospects of beyond 2D TMD crystals in optoelectronics, catalysis, and quantum information scie
212  large lattice mismatches for use in optics, optoelectronics, catalysis, or bioimaging.
213  their practical application in electronics, optoelectronics, composite materials, and energy-storage
214     Flexible and stretchable electronics and optoelectronics configured in soft, water resistant form
215 d for further applications in electronic and optoelectronics devices.
216 ons within individual two-terminal nanoscale optoelectronics devices.
217 ansfer dynamics for photoelectrochemical and optoelectronics devices.
218  including imaging, sensing, cancer therapy, optoelectronics, display, catalysis, and energy.
219 such as molecular electronics, data storage, optoelectronics, displays, sacrificial templates and all
220 al candidate for other applications, such as optoelectronics, drug delivery systems and even lithium-
221 have potential applications in photonics and optoelectronics due to large nonlinear optical coefficie
222 MoS2, hold great promise for electronics and optoelectronics due to their distinctive physical and el
223 for these materials in solar cells, infrared optoelectronics (e.g. lasers, optical modulators, photod
224 ncluding catalysis, sensing, photochemistry, optoelectronics, energy conversion and medicine.
225 cally relevant performance and stability for optoelectronics, energy conversion, photonics, spintroni
226 o contrive next-generation chemical sensors, optoelectronics, energy harvesters, and converters.
227  various applications including electronics, optoelectronics, energy storage devices, and so on.
228 ll as potential game-changing properties for optoelectronics, energy, and beyond.
229 ve materials while highlighting their use in optoelectronics, erasable inks, or as the next generatio
230 aging, security protection, optical display, optoelectronics for information storage, and cell stimul
231 matic exploration of nanoscale photonics and optoelectronics for solid-state refrigeration and on-chi
232 owing need to integrate such components with optoelectronics for telecommunications and computer inte
233                The approach uses wafer-scale optoelectronics formed in unusual, two-dimensionally com
234 sults demonstrate that prior to their use in optoelectronics further surface engineering of tin chalc
235 rmance of silicon-based electronics, silicon optoelectronics has been extensively studied to achieve
236 ull potential of graphene in electronics and optoelectronics, high-quality graphene patterns on insul
237 a promising approach for tunable electronics/optoelectronics, human-machine interfacing and artificia
238 s bioimaging, biomedicine, photovoltaics and optoelectronics, in addition to being inexpensive additi
239 als and review some of their applications in optoelectronics, including lasing and photodetection, an
240 l potential of halide perovskite (HaP)-based optoelectronics, including photovoltaics and light-emitt
241  many important applications in electronics, optoelectronics, information processing, catalysis, biom
242 nsfer complex system where the magnetism and optoelectronics interact.
243 s and composites, the field of photonics and optoelectronics is believed to be one of the most promis
244  in producing perovskite nanowires (NWs) for optoelectronics, it remains challenging to solution-prin
245 h as solar cells, OFETs, molecular wires and optoelectronics just to name a few.
246 increasingly in numerous disciplines such as optoelectronics, microfabrication, sensors, tissue engin
247 ng approach for electronics, plasmonics, and optoelectronics nanodevices.
248                                       Modern optoelectronics needs development of new materials chara
249 plications in light-converting materials for optoelectronics, nonlinear optics, optical storage, fluo
250  have emerged as a new material platform for optoelectronics on account of its intrinsic stability.
251  the fabrication of hybrid three-dimensional optoelectronics on the sub-micron scale.
252 ich may find applications in next-generation optoelectronics or photovoltaics.
253 variety of applications in microelectronics, optoelectronics, photonics, and energy technologies.
254 nd materials for use in optics, electronics, optoelectronics, photonics, magnetic device, nanotechnol
255 een studied to develop novel applications in optoelectronics, photovoltaics and green chemistry.
256 , but also in applications of plasmonics for optoelectronics, photovoltaics and related technologies.
257  great promise for potential applications in optoelectronics, photovoltaics and thermoelectrics.
258 oble metals are promising for application in optoelectronics, plasmonics and renewable energy.
259 ery small regions could have applications in optoelectronics, plasmonics and transformation optics.
260           With this in mind, a purpose-built optoelectronics probe station capable of simultaneous op
261 a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- an
262 interest for their visible and near-infrared optoelectronics properties.
263                                 Custom laser optoelectronics provide sub-nanometer and near-microseco
264 sible applications in low-power spintronics, optoelectronics, quantum computing and green energy harv
265                                  Advances in optoelectronics require materials with novel and enginee
266 m shift from hard to flexible, organic-based optoelectronics requires fast and reversible mechanical
267         Metal-halide perovskites transformed optoelectronics research and development during the past
268 d these materials to the forefront of modern optoelectronics research.
269 rable for applications that include sensing, optoelectronics, robotics, energy conservation, and ther
270 f applications, such as, photovoltaics (PV), optoelectronics, sensors, and bio-electronics.
271 operties that have potential applications in optoelectronics, sensors, and imaging.
272 cludes flexible and transparent electronics, optoelectronics, sensors, electromechanical systems, and
273 e a tremendous potential for next-generation optoelectronics since they can be stacked layer-by-layer
274 s that are relevant for fields as diverse as optoelectronics, solar energy conversion, and photobiolo
275 tial for the development of perovskite-based optoelectronics, such as tandem solar cells and full-col
276 emely difficult to achieve using established optoelectronics technologies, owing to the intrinsically
277 es but also providing a scheme to design new optoelectronics that can surpass the fundamental limitat
278 roduce an injectable class of cellular-scale optoelectronics that offers such features, with examples
279 f these materials in organic electronics and optoelectronics, the construction of oligothiophene-base
280 ances in metal halide perovskites for use in optoelectronics, the fundamental understanding of the el
281 ay critical roles in today's electronics and optoelectronics, the introduction of active heterojuncti
282             Following its success in organic optoelectronics, the organic doping technology is also u
283                             The emergence of optoelectronics, the recently shown possibility of stron
284 ng thermal management in nanoelectronics and optoelectronics, thermoelectric devices, nanoenhanced ph
285 Owing to their promise in photocatalysis and optoelectronics, titanium based metal-organic frameworks
286 ng c-plane GaN for the growth of III-nitride optoelectronics to be eliminated.
287 inorganic fluorophores for applications from optoelectronics to biology.
288 ranging from quantum information science and optoelectronics to high-resolution metrology.
289 pplications spanning from smart materials to optoelectronics to quantum computation.
290 ntal interest in research areas ranging from optoelectronics to the physics of quantum confinement.
291  broad scope of applications in electronics, optoelectronics, topological devices, and catalysis.
292  considerations) yield a convenient tool for optoelectronics when the radiation field is treated clas
293 rganic components have attracted interest in optoelectronics, where high-efficiency devices with mini
294 rly advantageous when combining polymers for optoelectronics, where the ability to control the interf
295 nsulators) has ushered in an era of flatland optoelectronics whose full potential is still being arti
296 on for mechanically bendable and stretchable optoelectronics will broaden the application of "Interne
297 applicability in the fabrication of flexible optoelectronics with tunable light scattering effects by
298 ructures provide a route to electronics (and optoelectronics) with extremely high levels of stretchab
299 rates are ubiquitously used in photonics and optoelectronics, with glass and plastics as traditional
300 s are gaining attention in halide perovskite optoelectronics, with varying levels of success.

 
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