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1 nsport and charge separation with near unity quantum efficiency.
2 ion layers exhibiting high photoluminescence quantum efficiency.
3 nce and dark current, while maintaining high quantum efficiency.
4 ction efficiency, in agreement with the high quantum efficiency.
5 neous long lifetime and high phosphorescence quantum efficiency.
6 h released thymidine exclusively with higher quantum efficiency.
7 actor (not exceeding 50) provide significant quantum efficiency.
8 e; yet, some OPV blends achieve near-perfect quantum efficiency.
9 results in a 5.5-fold-improved fluorescence quantum efficiency.
10 recently broken the 20% barrier for external quantum efficiency.
11 f 37 cd A(-1), 14 lm W(-1), and 11% external quantum efficiency.
12 l thermal disturbance and the photodetection quantum efficiency.
13 g extremely-dim brightness due to low (0.1%) quantum efficiency.
14 examples nevertheless demonstrate near-unity quantum efficiency.
15 ining barriers to be attacked with near 100% quantum efficiency.
16 d to a significant reduction in the internal quantum efficiency.
17 ding to simultaneously high color purity and quantum efficiency.
18 ts core antenna while achieving near perfect quantum efficiency.
19 r results in photocatalysts exhibiting a low quantum efficiency.
20 een emitting ZnO with significantly enhanced quantum efficiency.
21 environmental compatibility, and near-unity quantum efficiencies.
22 in photosynthesis are rapid events with high quantum efficiencies.
23 oalgal growth and outstanding photosynthetic quantum efficiencies.
24 ibit tunable emissions, as well as excellent quantum efficiencies.
25 erovskite single crystals with high external quantum efficiency (200%), ultralow dark current (10(-12
26 mes the hydrogen evolution rate and apparent quantum efficiency (400 nm), respectively, compared with
31 onalities by at least 10(4), while retaining quantum efficiencies above 50%, and demonstrate evidence
32 ementary absorbing materials, resulting in a quantum efficiency above 75% between 400 and 720 nm.
33 t materials can well maintain their superior quantum efficiency after heating at a temperature over 1
34 omplexes exhibit far-red emission, with high quantum efficiencies and brightness and also exhibit exc
35 ion architecture show greater total external quantum efficiencies and enhanced wide-angle light captu
37 achieves efficiencies of 27.3% for external quantum efficiency and 74.5 lm W(-1) for power efficienc
38 le match with the commercial UV chips, 73.2% quantum efficiency and 90.9% thermal stability at 150 de
40 gy, enabling devices with near 100% internal quantum efficiency and a high power conversion efficienc
41 of a large enhancement in photoluminescence quantum efficiency and a potential route to valleytronic
42 nction of layer thickness, photoluminescence quantum efficiency and absorption coefficient of the org
43 itting diode (OLED) with 24.8% peak external quantum efficiency and CIE coordinates of (0.147, 0.079)
44 Clear improvements in measured detective quantum efficiency and combined energy resolution/energy
45 between electroluminescence and photovoltaic quantum efficiency and conclude that the emission from t
46 ss broadband-enhanced light absorption, high quantum efficiency and desirable power conversion effici
47 ect electron detectors with higher detective quantum efficiency and fast read-out marks the beginning
48 ies that are deemed necessary to attain high quantum efficiency and high solar-to-hydrogen (STH) conv
50 his addition of two carbon atoms doubles the quantum efficiency and improves the photon yield of the
52 y used extensively to calculate the internal quantum efficiency and its droop in the III-nitride LED.
53 ayer exhibit an improvement in both internal quantum efficiency and light output, which is similar to
55 served changes in measured infrared external quantum efficiency and relative luminescence intensity i
57 we examined the photocatalytic H2 generation quantum efficiency and the rates of elementary charge se
58 otoenergy to chemical energy with near unity quantum efficiency and under high light intensities by s
59 ncement of out-coupling efficiency, internal quantum efficiency, and color purity in thermally activa
61 ith ultralong lifetime, high phosphorescence quantum efficiency, and high stability for promising app
62 gy into electrical energy with close to 100% quantum efficiency, and there is increasing interest in
64 SrTaO2 N nanoplates, with a record apparent quantum efficiency (AQE) of 6.1 % for OER compared to th
67 the short-circuit current (Jsc) and external quantum efficiency are even higher than reported values
69 terials, respectively, we show that external quantum efficiencies as high as 16% can be obtained for
72 ht and demonstrate up to a 2000% increase in quantum efficiency as the power of the light is varied f
73 The photoresponse reaches up to 50% external quantum efficiency at 1000 nm and extends to 1200 nm.
77 logy up to 2000 nm, given that high external quantum efficiencies can be maintained at these low phot
79 ults suggest a two-pathway mechanism: a high quantum efficiency charge-transfer pathway to H2ase gene
81 ary modes, thus achieving photoisomerization quantum efficiencies comparable to those seen in visual
82 te exhibits a ca. 16-fold enhancement in the quantum efficiency compared with the reported BiVO(4) na
83 example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0
86 ge selective diode fabrication, and internal quantum efficiency determinations were carried out to ob
88 h 2D photovoltaic devices are limited by low quantum efficiencies due to the severe interface recombi
89 s a green emissive dopant have high external quantum efficiencies (EQE = 19.4%) and brightness of 54
90 a direct correlation between their external quantum efficiencies (EQE) in organic solar cells and th
91 ty up to 0.77 A W(-1) due to a high external quantum efficiency (EQE) in exceeding 90%, which represe
92 green-emitting devices with a peak external quantum efficiency (EQE) of 14% at 1000 cd m(-2); their
93 iance of 2555 W sr(-1) m(-2) , peak external quantum efficiency (EQE) of 17%, considerably reduced EQ
94 imer-based white devices achieve an external quantum efficiency (EQE) of 24.5%, coordinates of (0.37,
95 ion-processed OLEDs achieves a high external quantum efficiency (EQE) of 30.8% with a very flat effic
96 H3 NH3 PbI3 perovskite LEDs with an external quantum efficiency (EQE) of 5.9% as a platform, it is sh
97 (EL) peak at 325 nm and achieved an external quantum efficiency (EQE) of about 0.03%, for a deep UV-L
99 sable OLEDs with an extremely small external quantum efficiency (EQE) roll-off has been demonstrated.
100 as the emitter has achieved a high external quantum efficiency (EQE) up to 11.6%, far exceeding the
101 hoto)electrochemical transients and external quantum efficiency (EQE), are extracted, and prospects f
102 enges that limit the improvement of external quantum efficiency (EQE), making the search of alternati
106 D device that showed an outstanding external quantum efficiency (eta = 6.31%) with blue emission [CIE
109 dride reduction work in opposition regarding quantum efficiencies for (1)O2 and (3)DOM* production bu
111 he great potential of improving the internal quantum efficiency for mid- and deep-UV device applicati
113 e with a decrease in the photon upconversion quantum efficiency from 11.6% to 4.51% to 0.284%, as exp
115 onstrate a marked decrease in photosynthetic quantum efficiency, from 98% to below 72%, if the unprod
116 diative recombination rates and luminescence quantum efficiencies >15% with high carrier mobilities e
117 ) and fill factors of 62% with high external quantum efficiencies >70% across the spectral regime of
118 ganic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m(-2) with colour r
119 ganic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white orga
121 larify the necessary means to achieve device quantum efficiency higher than the state-of-the-art GaN:
122 h organic photovoltaic cells would have poor quantum efficiencies if every encounter led to recombina
123 ght emitting diode leads to a 72.5% external quantum efficiency improvement compared with the one wid
124 substituents have the highest photochemical quantum efficiencies in the presence of an alkene trap,
125 ilicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, fe
127 The diffusion length determines PSII's high quantum efficiency in ideal conditions, as well as how i
128 ndent studies further show that the internal quantum efficiency in one-layer MoS2 can reach a maximum
129 the field of view and increase the effective quantum efficiency in single-molecule switching nanoscop
131 4 and 5 phenylene units, photon upconversion quantum efficiencies increase again to 0.468% and 0.413%
132 y toward methane C-H bond activation and the quantum efficiency increased linearly as a function of l
133 transfer processes display a remarkably high quantum efficiency, indicating a near-complete inhibitio
134 lar spectrum LSCs suffer from moderately low quantum efficiency, intrinsically small absorption cross
135 This multistep process proceeds with low quantum efficiency, involves a molecular rearrangement b
136 been tested by conversion efficiency (J-V), quantum efficiency (IPCE), electrochemical impedance spe
137 alysis of limiting factors for high internal quantum efficiencies (IQE) are accomplished through the
138 lar spectrum, but nevertheless, the internal quantum efficiency (IQE) has not been reported to be hig
139 blends, our study reveals that the internal quantum efficiency (IQE) is essentially independent of w
145 oactivated charge separation with near unity quantum efficiency is not fundamentally understood.
147 der of magnitude enhancement of the external quantum efficiency is observed without reduction in the
150 ncluding higher reliability and fluorescence quantum efficiency, larger diversity of subcellular targ
151 om lasers provide new possibilities for high quantum efficiency lasing that could potentially be wide
154 rs: 274 vs 17 mT) with high and low external quantum efficiency maximum, EQE(max) (21.05% vs 4.89%),
157 tance spectroscopies, combined with external quantum efficiency measurements, provided structure-prop
160 123 mA cm(-2), giving external and internal quantum efficiencies of 0.1% and 0.4%, respectively.
161 A cm(-2), with highest external and internal quantum efficiencies of 0.76% and 3.4%, respectively.
163 cur on a time scale of less than 100 fs with quantum efficiencies of 50 +/- 18% and 15 +/- 5%, respec
164 EBL-based OLEDs achieve current and external quantum efficiencies of 52 cd A(-1) and 14.3%, a ca. 50%
165 EBL-based OLEDs achieve current and external quantum efficiencies of 52 cd A-1 and 14.3%, a ca. 50% p
166 m upon excitations at 449 nm and 980 nm with quantum efficiencies of 6.3% and 1.1%, respectively.
167 itons and biexcitons by 109 and 100 folds at quantum efficiencies of 60 and 70%, respectively, in ver
168 white-light emissions with photoluminescence quantum efficiencies of approximately 20% for the bulk s
174 mission from highly localized excitons, with quantum efficiencies of up to 75%, is observed in blue t
175 a single-junction device shows high external quantum efficiency of >60% and spectral response that ex
176 cal trapping scheme, we show a peak external quantum efficiency of (109 +/- 1)% at wavelength lambda
183 eeding 100% and we report a maximum external quantum efficiency of 122% for cells consisting of the s
184 nover frequency of 76 h(-1), and an external quantum efficiency of 15% (lambda = 360 +/- 10 nm).
185 000 cd m(-2) , while maintaining an external quantum efficiency of 15.3% at such high brightness, dem
186 ites, leading to PeLEDs with a peak external quantum efficiency of 17.3% and half-lifetime of approxi
187 We report blue devices with a peak external quantum efficiency of 17.3% in a host-free emitting laye
188 efficiency of 61.6 cd A(-1) and an external quantum efficiency of 17.8%, which are the highest effic
189 ly 100% selectivity to methanol and internal quantum efficiency of 2.1% in the visible region, furthe
191 ngly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 mus
192 ltralong lifetime of 5.72 s, phosphorescence quantum efficiency of 26.36%, and exceptional stability
193 trix-protected CQDs show a photoluminescence quantum efficiency of 30 per cent for a CQD solid emitti
194 om cut-off wavelength at 77 K and exhibits a quantum efficiency of 31% for a 2 microm-thick absorptio
195 emitter can reach an extremely high external quantum efficiency of 31.9% with a pure blue emission.
196 e simultaneously realizes a maximum external quantum efficiency of 32.5%, CIE(y) ~ 0.12, a full width
197 rrent density of 1.8 x 10(-10) A/cm(2) and a quantum efficiency of 40%, resulting in a detectivity of
198 y of 0.6 A/W at ~1.7 mum, corresponding to a quantum efficiency of 43% at zero bias under front-side
200 urrent density of 7.78 mA/cm(2) and external quantum efficiency of 47% are also the best such photovo
201 ably long lifetime of 0.28 s and a very high quantum efficiency of 5 % was thus obtained under ambien
202 hows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms
203 external gate to achieve a maximum external quantum efficiency of 55% and internal quantum efficienc
204 of cyclic alkanes gave an excellent apparent quantum efficiency of 6.0% under visible light illuminat
205 rrent density of 10.5 mA cm(-2) and external quantum efficiency of 61.3% are also the best reported i
206 inant from 15 to 300 K, with a high internal quantum efficiency of 62% even at room temperature.
208 on-optimized NYS:0.10Sm(3+) exhibited a high quantum efficiency of 73.2%, and its luminescence intens
209 ier with weak measurements, obtaining a high quantum efficiency of 75% (70% including noise added by
212 ed strong and persistent RTP emission with a quantum efficiency of approximately 20 % and a lifetime
217 ts are possible as regards (a) the detective quantum efficiency of cameras at high resolution, (b) co
218 en-circuit voltage of 1.33 V and an external quantum efficiency of electroluminescence of 10(-4).
219 the overall photochemical reactivity, as the quantum efficiency of ET defines the upper limit on the
220 n CdS NRs by directly measuring the rate and quantum efficiency of ET from photoexcited CdS NRs to Ca
221 , with values of 10(7) s(-1), resulting in a quantum efficiency of ET of 42% for complexes with the a
222 CuPC domains, combine to reduce the internal quantum efficiency of free polaron formation in the bulk
223 r the previously unexplained decrease in the quantum efficiency of isoprene emission with increasing
225 nd inexpensive way to determine the absolute quantum efficiency of nano phosphors, normally a difficu
227 r first devices already exhibit an extrinsic quantum efficiency of nearly 10% and the emission can be
228 ng [Co4(H2O)2(PW9O34)2](10-) (1-P2), and the quantum efficiency of O2 formation at 6.0 muM 1-V2 reach
229 nversion efficiency of 22.7% and an external quantum efficiency of over 10% have been achieved for pe
230 hotovoltaic devices has achieved an external quantum efficiency of over 100% and demonstrated signifi
235 T78S mutation had reduced photosynthesis and quantum efficiency of photosystem II ( (PSII)) and reduc
237 we investigated the response of the maximum quantum efficiency of photosystem II (PSII) to rapidly i
238 revealed a transient COR-induced decrease in quantum efficiency of photosystem II at dawn of the day
239 ultures of O. tauri in parallel with maximum quantum efficiency of photosystem II photochemistry (Fv
240 ) s(-1)), as shown by the decline in maximum quantum efficiency of photosystem II photochemistry.
242 n substantial and significant impacts on the quantum efficiency of PSI and PSII, electron transport,
244 S-CdS quantum dots enhance the peak external quantum efficiency of shortwave-infrared light-emitting
245 ecombination is consistent with the internal quantum efficiency of the corresponding solar cell.
246 ative efficiency, with the photoluminescence quantum efficiency of the film under solar excitation de
254 ibit a detectivitiy>10(9) Jones, an external quantum efficiency of ~100%, a linear dynamic range of 8
255 fficiency of ~102.0 cd A(-1) and an external quantum efficiency of ~28.5% ph/el, which agree well wit
256 The AlInN nanowires exhibit a high internal quantum efficiency of ~52% at room temperature for emiss
257 rvable EL is achieved with the high external quantum efficiency of ~6% at room temperature due to eff
258 semiconductor photocatalysts, photocatalytic quantum efficiencies on plasmonic metallic nanostructure
260 h intercalated graphene layers have superior quantum efficiency over single-bottom graphene/QD device
261 lectrodes can significantly mitigate the low-quantum efficiency performance of photoconductive terahe
266 O/CH3 NH3 PbBr3 /Au, with near 100% internal quantum efficiency, promising power conversion efficienc
267 ities, a narrow range of absorption and poor quantum efficiencies (Q.E.) due to fast recombination of
269 rit of specific device characteristics, e.g. quantum efficiency (QE) in grating-based metallic photoc
271 e showed that the steady-state H2 generation quantum efficiencies (QEs) depended sensitively on the e
272 unction organic solar cells with an external quantum efficiency reaching up to 44% and an open-circui
276 in energy than the CT states in the external quantum efficiency spectra of a significant number of or
280 olecule fluorescence from emitters with high quantum efficiencies such as organic dye molecules can e
281 plast envelope, the C4 pathway having higher quantum efficiency than C3 for permeabilities below 300
282 ing a palette of chemical dyes with improved quantum efficiencies that spans the UV and visible range
284 rating point based on the PV cell's external quantum efficiency, the skin's transmission spectrum, an
287 negligible hysteresis and up to 80% external quantum efficiency under select monochromatic excitation
290 a thin film in prototype OLEDs with external quantum efficiency up to 11% and a narrow emission bandw
291 ight photocatalytic activity and an apparent quantum efficiency up to 12.77%, which is 50 times highe
293 e copper doping into CQWs enables near-unity quantum efficiencies (up to approximately 97%), accompan
294 The devices combine high (78-83%) external quantum efficiency with high (0.91-0.95 V) photovoltages
295 fully controllable synthesis as well as high quantum efficiency with improved thermal stability, make
297 ibit significantly higher responsivities and quantum efficiencies, with similar dark currents, hence
298 is emitter achieves (31.1 +/- 0.1)% external quantum efficiency without any out-coupling, which shows
299 nthesis achieves near unity light-harvesting quantum efficiency yet it remains unknown whether there
300 of green FP (bfloGFPa1) with perfect (100%) quantum efficiency yielding to unprecedentedly-high brig