ライフサイエンスコーパス: resistive

1 ements is 0.6 eV, and the material is highly resistive.

2 acellular impedance is low and approximately resistive.

3 varies in relation to the charging time and resistive and capacitive noise.

4 ia-derived ZnS nanoparticles, exhibit unique resistive and capacitive responses to changes in O2 and

5 The in-plane resistive and impedance properties of ZnO films, fabrica

6 y lower fill factors due to a combination of resistive and non-radiative recombination losses.

7 allows determination of the boundary between resistive and non-resistive behaviour to be made with gr

8 The operation of resistive and phase-change memory (RRAM and PCM) is cont

9 nce in cerebral cortex could be high and non-resistive, and we propose further experiments to settle

10 Here, we introduce the Tactile Resistive Annularly Cracked E-Skin (TRACE) sensor to add

11 METHODS AND Total, pulsatile, and resistive arterial load were measured in 2141 patients w

12 etic field of 14.4 tesla inside a 31.1-tesla resistive background magnet to obtain a d.c.

13 etic field of 14.4 tesla inside a 31.1-tesla resistive background magnet to obtain a d.c. magnetic fi

14 on of the boundary between resistive and non-resistive behaviour to be made with greater precision th

15 Magneto-resistive biosensors have been found to be useful becaus

16 They possess resistive, capacitive and inductive components that can

17 sting mechanical sensing technologies (i.e., resistive, capacitive, or piezoelectric) have yet offere

18 The key output signal of the sensor is the resistive component of the MIP-functionalized titanium e

19 sent an equivalent circuit model to describe resistive components in a CDI cell.

20 as an optically transparent low electrically-resistive contract in the photovoltaics industry.

21 HCN) conductance in the afferent and creates resistive coupling at the synaptic cleft.

22 transmission: quantal, ion accumulation and resistive coupling to be multiplexed across the synapse.

23 rizing current is present at the AIS, due to resistive coupling with the soma.

24 RNA-DNA duplex in the nanopore recorded as a resistive current pulse.

25 nductors (CMOSs) and adjustable two-terminal resistive devices (memristors) have been developed.

26 traction, whereas microtubules contribute as resistive/dissipative elements.

27 tive touch screens and pixels of microscopic resistive electrodes are demonstrated.

28 Memristors are resistive elements retaining information of their past d

29 ither by continuously 'grinding' through the resistive environment of the export gate, or by exerting

30 lectric coolers operate under huge thermally resistive environment.

31 of blebs in rounded cells moving in a highly resistive environment.

32 sents a pressure mapping sensing using piezo-resistive fabric to represent aspects of the sense of to

33 ness parameter) as a function of an external resistive force (F) and ATP concentration ([T]).

34 r and 4-fold changes in the velocity and the resistive force at which maximum power output occurs.

35 This was the result of a reduction in the resistive force from lower leg muscles 130 ms after the

36 Here, we show that all resistive force hypotheses in grains arise from local fr

37 to obey surprisingly simple, yet empirical 'resistive force hypotheses'.

38 erion to determine which rheologies can obey resistive force hypotheses.

39 New surface resistive force theory (RFT) calculation reveals how wav

40 Resistive force theory modeling incorporating variation

41 However, quantitative comparisons suggest resistive force theory underestimates the influence of c

42 Using resistive force theory, we show how the helical motion o

43 efficients that are not captured by original resistive force theory.

44 nanoprobe structure, which were converted to resistive force.

45 s by combining the calculated forms based on resistive-force theory of undulatory motion in viscous f

46 than grains, and to predict a new family of resistive-force-obeying materials: cohesive media such a

47 in Mg(3) Sb(2) -based materials is caused by resistive grain boundaries.

48 (<500 K) is compromised due to their highly resistive grain boundaries.

49 Furthermore, by integrating a thin resistive heater as the thermal trigger of Joule heating

50 re was increased in a controlled way using a resistive heater to test theoretical predictions of the

51 tly complement and close the gap between the resistive heating and the shock compression experiment.

52 d to reduction in both radiation damping and resistive heating effects in the NWs.

53 n the tip and a counter electrode causes the resistive heating of the surrounding electrolyte solutio

54 bers do not necessarily constitute undesired resistive heating problem for photovoltaics.

55 During electrophoresis, Joule (or resistive) heating degrades separation performance.

56 ral intracellular coupling and accounted for resistive heterogeneity in the extracellular space showe

57 designed six functional inks, based on piezo-resistive, high-conductance, and biocompatible soft mate

58 asing the bound anions to regenerate the low-resistive hydrogel.

59 ties, leakage conduction mechanisms, and the resistive hysteresis of the materials.

60 daily activities that are either aerobic or resistive in nature is compromised and contributes to th

61 ectrodes have shown that it is approximately resistive in the range of biological interest, <10 kHz,

62 tration rate (P < 0.001), and improved renal resistive index (P < 0.001) and kidney microcirculation.

63 n (P = 0.007) and low middle cerebral artery resistive index (P = 0.04) were associated with RV dysfu

64 e-corrected peak systolic velocity (PSV) and resistive index (RI) values were compared between patien

65 ity, portal vein flow volume, hepatic artery resistive index (RI), hepatic artery pulsatility index (

66 city (EDV), peak systolic velocity (PSV) and resistive index (RI).

67 OLT recipients developed DAA (defined by HA resistive index [HARI] <0.5) and received oral SVDs.

68 ng-II, TLR4 deficient mice had reduced renal resistive index and increased renal cortical blood flow

69 to evaluate diagnostic performance of renal resistive index and tissue inhibitor of metalloproteinas

70 aorta ultrasound revealed a reduction in the resistive index and wall-to-lumen ratio.

71 A resistive index greater than 0.8 was associated with a h

72 A renal resistive index greater than or equal to 0.685 predictin

73 Renal resistive index had a good performance for predicting th

74 ke growth factor-binding protein 7 and renal resistive index in predicting reversibility of acute kid

75 An intrarenal arterial resistive index of less than 0.6 was associated with hig

76 growth factor-binding protein 7 and of renal resistive index to predict persistent acute kidney injur

77 ver operating characteristic curve for renal resistive index was 0.93 (95% CI, 0.89-0.98).

78 Renal resistive index was higher in persistent acute kidney in

79 Renal resistive index was measured within 12 hours after admis

80 Surrogate markers (eg, resistive index) fail to quantify actual volumetric flow

81 intranodular vascularity, pulsatility index, resistive index, or peak-systolic velocity, was associat

82 Portal blood flow and renal and splenic resistive indexes were calculated through echographic me

83 mories (RRAMs) can be programmed to discrete resistive levels on demand via voltage pulses with appro

84 s to program memristive devices to arbitrary resistive levels.

85 h increased mortality (P<0.001 for all), but resistive load was not.

86 s reflected in blood pressure, pulsatile and resistive load-is associated with adverse clinical outco

87 t (i.e., flexor) acted against an additional resistive load.

88 th activity in the lateral PAG (lPAG) during resistive loading, revealing spatially and temporally di

89 rolateral PAG (vlPAG) during anticipation of resistive loading, with activity in the lateral PAG (lPA

90 or semiconductor based optical devices where resistive losses and power consumption are important per

91 photovoltaics, particularly the optical and resistive losses of the front metal grid.

92 sorbers can enable the exchange of undesired resistive losses with the useful optical absorbance in t

93 ulting in superior power performance and low resistive losses.

94 equires the use of a 31-megawatt, 33.6-tesla resistive magnet inside 11.4-tesla low-temperature super

95 superconductor coils(1), and such high-power resistive magnets are available in only a few facilities

96 MEA remains stable when tested under highly resistive media using a continuous flow set up, as well

97 superior to that of conventional nonvolatile resistive memories by one order of magnitude.

98 uch advanced tasks, in-memory computing with resistive memories provides a promising avenue, thanks t

99 hnologies such as neuromorphic computing and resistive memories(6-9).

100 ased devices, with potential applications in resistive memories, solid-state frequency discriminators

101 rate the technological deployment of organic resistive memories.

102 ctical applications of emerging non-volatile resistive memories.

103 in nature of the graphene edge to assemble a resistive memory ( approximately 3 A thick) stacked in a

104 Here we present an analogue non-volatile resistive memory (an electronic synapse) with foundry fr

105 A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) w

106 Here we report a resistive memory device based on a spin-coated active la

107 ns (MFTJ) allowing us to create a four-state resistive memory device.

108 Non-volatile resistive memory devices based on ultrathin 2D nanomater

109 Here, we show that a cross-point array of resistive memory devices can directly solve a system of

110 In-memory computing using resistive memory devices is a promising non-von Neumann

111 the digitally trained weights to the analog resistive memory devices will not result in significant

112 Resistive memory devices, and in particular memories bas

113 nd SThM techniques to nanoscale and vertical resistive memory devices.

114 ayers, electrodes and/or device structure of resistive memory devices.

115 anomaterials for fabrication of non-volatile resistive memory devices.

116 n hydrogel to exhibit rewritable nonvolatile resistive memory features.

117 ed in almost every review article on organic resistive memory is the lack of areal switching uniformi

118 areas of research from superconductivity to resistive memory to catalysis.

119 rate and unpredictable switching of analogue resistive memory.

120 unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenom

121 properties, which are not consistent with a resistive (ohmic) medium, as often assumed.

122 olers instead of cryogenics for trapping and resistive on-column heating for reinjection.

123 quid|liquid electrochemical cells containing resistive organic media and interfacial areas in the cm(

124 keys rapidly adapted to a novel assistive or resistive perturbation along the direction of the reach.

125 struction microscopy (dSTORM), micro-fluidic resistive pore sizing (MRPS), and multi-angle light scat

126 minimum, and this is at least partly due to resistive power dissipation.

127 tegration of the stretchable, highly tunable resistive pressure sensor and the fully stretchable orga

128 Here we present an ultra-sensitive resistive pressure sensor based on an elastic, microstru

129 r than all previously reported capacitive or resistive pressure sensors.

130 r torus instability; and coronal jets from a resistive process involving magnetic reconnection.

131 to categorically distinguish capacitive and resistive properties of objects.

132 ler peak velocities, velocity time integral, resistive, pulsatility, acceleration indices (RI, PI, AI

133 This is done by combining resistive pulse (RP) measurements in a nanopore pipet an

134 create a mapping of the particle position to resistive pulse amplitude at the same instant in time.

135 During a resistive pulse experiment, the ionic current through a

136 of the inherent signal amplification of the resistive pulse method.

137 Microfluidic Resistive Pulse Sensing (MRPS) was used to accurately de

138 n solution and on magnetic particles using a resistive pulse sensing (RPS) nanopore.

139 The use of tunable resistive pulse sensing (TRPS) enabled continuous in sit

140 Here, we demonstrate the use of a tunable resistive pulse sensing (TRPS) technology to monitor the

141 r, we use dynamic light scattering (DLS) and resistive pulse sensing (TRPS) to observe a distinct red

142 -based sensor (aptasensor) utilising Tunable Resistive Pulse Sensing (TRPS).

143 suring zeta potential of nanoparticles using resistive pulse sensing are significantly improved by in

144 The use of nanocarriers within resistive pulse sensing facilitates the detection and qu

145 Here we propose tunable resistive pulse sensing for simultaneous size and surfac

146 In resistive pulse sensing of microRNA biomarkers, selectiv

147 ection method based on immunoaggregation and resistive pulse sensing technology.

148 s combined approach of optical detection and resistive pulse sensing will join with other attempts at

149 Nanopore-based resistive pulse sensing with biological nanopores has tr

150 ques, particle tracking analysis and tunable resistive pulse sensing).

151 Particle enumeration with tunable resistive pulse sensing, nano particles tracking analysi

152 size spherical shape virus ever measured by resistive pulse sensing.

153 A resistive pulse sensor is then used to measure the sizes

154 Resistive pulse sensors (RPSs) provide detailed characte

155 The use of resistive pulse sensors for submicron particle size meas

156 gies using both peptides and DNA aptamers in resistive pulse sensors.

157 tion, which is difficult to resolve with the resistive pulse signal alone.

158 ient decrease in the measured ionic current (resistive-pulse analysis).

159 unable surface charge and chemical state for resistive-pulse and rectification sensing.

160 This paper describes resistive-pulse detection of cancer biomarker (Vascular

161 Furthermore, resistive-pulse experiments are conducted to study the c

162 as an analytical tool enhancing the speed of resistive-pulse experiments, with a potential to simulta

163 To improve the precision of resistive-pulse measurements, we have used a focused ion

164 Temperature studies coupled with resistive-pulse nanopore sensing enable the quantificati

165 Resistive-pulse sensing is a label-free method for chara

166 nanopipettes have recently been employed for resistive-pulse sensing of Au nanoparticles (AuNP) and n

167 errant assembly with electron microscopy and resistive-pulse sensing on nanofluidic devices.

168 With resistive-pulse sensing, the nanopores fully resolved pu

169 Second, they are amenable to resistive-pulse type measurement systems when embedded i

170 emonstrated, using the nanopipette to detect resistive pulses as nanoparticles form.

171 n of nanoparticles based on the amplitude of resistive pulses caused by their translocation through n

172 d in terms of the width and amplitude of the resistive pulses generated from the two Coulter counters

173 o resolve the positional dependencies of the resistive pulses.

174 t a detailed study of the characteristics of resistive-pulses of charged and uncharged polymer partic

175 at the redox signals arise coincidently with resistive-pulses, suggesting that leakage of liposome co

176 quantitation and sizing of nanoparticles by resistive pulsing sensing (RPS) was investigated.

177 Resistive random access memories (RRAMs) can be programm

178 e we show simple two-terminal optoelectronic resistive random access memory (ORRAM) synaptic devices

179 device with NiOx interlayers in series with resistive random access memory (ReRAM) device demonstrat

180 y, motivating designs leveraging nonvolatile resistive random access memory (ReRAM), and with many st

181 A resistive random access memory (RRAM) device with a tuna

182 Resistive random access memory (RRAM) is a leading candi

183 As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only su

184 Filamentary resistive random access memory (RRAM) suffers from stoch

185 r as a substrate, we fabricated a disposable resistive random access memory (RRAM) which has good dat

186 e treatment with PEDOT:PSS of an established resistive random access memory platform.

187 As a suitable candidate for resistive random access memory technology, reduced graph

188 ip memory (with hypothetical on-chip digital resistive random access memory).

189 corroborate the reliability of the device as resistive random access memory.

190 ching mechanisms that operate in redox-based resistive random-access memories (ReRAM) is key to contr

191 Resistive random-access memory (RRAM) devices are recogn

192 It consists of more than one million resistive random-access memory cells and more than two m

193 e development of new device concepts such as resistive random-access memory.

194 nt types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-chang

195 The resistive relative humidity sensor was developed using a

196 The resistive reserve ratio (RRR) expresses the ratio betwee

197 pressure (P < 0.001 vs. a theoretical purely-resistive response) and a 15% increase of pulmonary comp

198 forces in each movement played assistive or resistive roles in limb dynamics.

199 2 molecule for unusually high CO2 uptake and resistive sensing.

200 tuning pore geometry for the application in resistive-sensing and multipronged characterization of p

201 o a sensing space on top of a tunnel magneto-resistive sensor.

202 The system alternates or combines direct resistive sintering (DRS) and indirect resistive sinteri

203 irect resistive sintering (DRS) and indirect resistive sintering (IRS).

204 h as electrical discharge sintering (EDS) or resistive sintering (RS), have been intensively investig

205 vortex can switch the whole junction into a resistive state at currents well below the Josephson cri

206 set' the magnetic anisotropy orientation and resistive state in the film, as well as to lower the mag

207 and stored in single devices as non-volatile resistive state transitions.

208 herefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxy

209 e involved in switching the device to a high resistive state.

210 stance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems

211 xhibits additional charge or spin order, the resistive states can be directly coupled, further allowi

212 hat electrically pre-switched devices in low-resistive states comprise reduced disordered phases with

213 cal stimuli being more pronounced for higher resistive states.

214 in particular thanks to their highly tunable resistive states.

215 ety of designs are demonstrated, including a resistive strain gauge and an ionic cable.

216 n strain-mediated contact in anisotropically resistive structures (SCARS).

217 oxygen loss, which leads to the formation of resistive surface layers on the cathode particles.

218 A solid-state three-terminal resistive switch based on gate-voltage-tunable reversibl

219 Metal oxide resistive switches are increasingly important as possibl

220 Resistive switches are non-volatile memory cells based o

221 State-of-the-art resistive switches rely on either conductive filament fo

222 ctrochemical devices, such as fuel cells and resistive switches, but these effects have remained larg

223 which junctions between two nanowires act as resistive switches, often compared with neurosynapses.

224 such as transistors, memories, sensors, and resistive switches.

225 Here we report a giant, nonvolatile resistive switching (DeltaR/R > 1,000%) and strong modul

226 Non-volatile resistive switching (NVRS) is a widely available effect

227 The resetting behaviors of Pt/TiO2/Pt resistive switching (RS) cell in unipolar RS operations

228 In this paper, we present a unique resistive switching (RS) mechanism study of Pt/TiO2/Pt c

229 ual system that exhibit non-volatile optical resistive switching and light-tunable synaptic behaviour

230 The giant resistive switching and strong T(c) modulation could ena

231 Prevailing models of resistive switching arising from electrochemical formati

232 Resistive switching can be achieved in a Mott insulator

233 um oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stabil

234 n solid-state memory devices, enabling their resistive switching capacity.

235 for tuning the mobility of V(o) to modulate resistive switching characteristics for non-volatile mem

236 Unipolar and bipolar resistive switching characteristics in graphene oxide (G

237 Correlation between the resistive switching characteristics of Au/Zn-doped CeO(2

238 Oxide-based resistive switching devices are promising candidates for

239 rtant step towards engineering more reliable resistive switching devices.

240 nd light illumination, can induce pronounced resistive switching effects.

241 Mott nanodevices retain a memory of previous resistive switching events long after the insulating res

242 While recent advances in resistive switching have provided a path to emulate syna

243 ayer GO-based devices depicted complementary resistive switching having the lowest current values ~12

244 The relaxation properties with resistive switching identification method by utilizing t

245 Polarization-driven resistive switching in ferroelectric tunnel junctions (F

246 intentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO3 junctions.

247 l method to monitor the development of local resistive switching in TiO2-based devices.

248 owever, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of tra

249 he defect-based mechanisms that give rise to resistive switching is a major impediment for engineerin

250 This resistive switching is an order of magnitude larger than

251 Resistive switching is attractive because of, inter alia

252 deposition (iCVD) for polymerization of the resistive switching layer and inkjet printing of the ele

253 tnessed substantial advances in non-volatile resistive switching materials such as metal oxides and s

254 ting potential applications for SiO(x)-based resistive switching materials.

255 A detailed understanding of the resistive switching mechanisms that operate in redox-bas

256 he active and inert electrodes confining the resistive switching memory cell.

257 Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is

258 aviors by integrating silicon oxide (SiO(x)) resistive switching memory with Si diodes.

259 We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices wi

260 to gain new insights into the scaling of the resistive switching phenomenon and observe the formation

261 rm metallic filaments and participate in the resistive switching process, illustrating that there is

262 Physical neural networks made of analog resistive switching processors are promising platforms f

263 underlying redox processes that give rise to resistive switching remain poorly understood.

264 The resistive switching SET transition is modeled as hydroge

265 such efforts, by revealing the nature of the resistive switching through assessing the transport prop

266 present a straight-forward method to induce resistive switching to a memristive device, introducing

267 for granting an exclusively light-triggered resistive switching to memristive devices irrespectively

268 electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic end

269 Resistive switching, a phenomenon in which the resistanc

270 Non-volatile resistive switching, also known as memristor(1) effect,

271 indings reveal the microscopic origin behind resistive switching, and also provide general guidance f

272 ials in applications such as edge computing, resistive switching, and mechanically flexible sensing a

273 l input is used to improve or to promote the resistive switching, has drawn particular attention.

274 Among the different types of resistive switching, threshold firing(10-14) is one of t

275 layer GO-based devices illustrated non-polar resistive switching, which is a combination of unipolar

276 The bipolar resistive switching, with a concurrent capacitive contri

277 UV-illumination ultimately results to resistive switching, without involving any additional st

278 usters, which resulted in the diminishing of resistive switching.

279 0 K, validating the role of Joule heating in resistive switching.

280 and related oxides studied for red-ox based resistive switching.

281 ms by which the interface layer controls the resistive switching.

282 level to 24%, the device hardly exhibits any resistive switching.

283 r the underpinning mechanism responsible for resistive switching.

284 ions for voltage-induced flash phenomena and resistive switching.

285 e findings provide detailed insight into the resistive-switching mechanism in SrFeO(x) -based memrist

286 eptional oxygen-ion transport properties for resistive-switching memory devices.

287 ctroresistance effect is distinct from known resistive-switching or tunnel electro resistance.

288 rovskite phase, SrFeO(3) , gives rise to the resistive-switching properties of SrFeO(x) memristive de

289 In this study, a 50 nm thin film nickel resistive temperature sensor was fabricated on a 300 nm

290 connect cross-section and they are much more resistive than Cu, the effective conductance of an ultra

291 lms of MoS(2) and MoSe(2) are typically more resistive than their exfoliated and co-evaporation based

292 Further, using highly sensitive thin-film resistive thermometry, direct electrocaloric temperature

293 We reversibly switch from resistive to conductive behaviour at charged walls in se

294 l tensile moduli suggest that the RDT is not resistive to pathologic disc displacement.

295 iance from the Myotonometer measurements and resistive torques from the repeated passive stretch at v

296 ess, coinciding with the thickness-dependent resistive transition.

297 2-AG relieves the CB2-mediated steady-state resistive tuning on IFN-alpha induction by pDCs, thereby

298 We exploit a high-performing resistive-type trace oxygen sensor based on 2D high-mobi

299 Whereas NdNiO(2) exhibits a resistive upturn at low temperature, measurements of the

300 E) MJs using the open form of DAE are highly resistive while those with DAE in the closed form are mo