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1 veal the underlying mechanisms governing the resistivity.
2 es more difficult, increasing the electrical resistivity.
3 nduced low-temperature plateau of electrical resistivity.
4 atively high charge carrier mobility and low resistivity.
5 diffusion, to directly affect the electrical resistivity.
6 itical step towards achieving films with low resistivity.
7 e isotropic one, with concomitant changes in resistivity.
8 nd structure and anomalies in the electrical resistivity.
9 with most Te substituting Se has the highest resistivity.
10 d a corresponding increase in gap-junctional resistivity.
11 nal Cx40 expression increases gap-junctional resistivity.
12 raphene was processed to control its surface resistivity.
13 an order of magnitude decrease in electrical resistivity.
14 nd a 10(8)-fold decrease in room-temperature resistivity.
15 d a peak in the temperature-dependent planar resistivity.
16 electron-like at the temperature of maximum resistivity.
17 cattering, and the temperature dependence of resistivity.
18 ng the temperature-squared behavior of their resistivities.
19 s high-density (10(19) to 10(20) cm(-3)) low-resistivity (10(-4)Omega .cm) metallic germanium of prec
20 60 nm thick Cr(2)O(3) films show bulk-like resistivity (~ 10(12) Omega cm) with a breakdown voltage
21 an extremely high temperature coefficient of resistivity ~10%/K, simultaneously with a very low resis
24 vestigated through the temperature dependent resistivity (~8 GPa) and DC magnetization (~1 GPa) measu
25 osed to proteases results in a change of its resistivity, a quantity that can be wirelessly monitored
26 are investigated by complementary electrical resistivity, ac magnetic susceptibility and single-cryst
27 about 0.25 K, which is confirmed by the zero resistivity, AC magnetic susceptibility, and specific he
28 lled by a hysteretic anomaly in the in-plane resistivity accompanied by non-linear electrical transpo
29 more than four orders of magnitude change in resistivity across the metal-to-insulator transition.
30 ) and follow the evolution of the electrical resistivity across the nematic quantum critical point.
32 cial case of constant ohmic specific contact resistivity along the contact length, our theory has bee
34 ple, the Dirac bands appear to provide a low resistivity along the direction in which they are highly
36 and antiferromagnetic phases with different resistivities and the origin of the GER effect is the st
37 which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compar
42 Haas minimum in the longitudinal electrical resistivity and its magnitude relates as 3/5 to the heig
43 lations that reach in amplitude up to 50% of resistivity and persist to temperatures above 100 K.
44 direct ex vivo measurement of gap-junctional resistivity and quantitative connexin immunoblotting and
49 a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 x 10(-4) Omega-cm
50 2) is investigated by combining diffraction, resistivity and spectroscopy techniques under high-press
52 B(12) and ZrB(12), respectively, as shown by resistivity and superconducting quantum interference dev
53 an order of magnitude lower room temperature resistivity and superior chemical stability, compared to
54 ative agreement between the topological-Hall resistivity and the topological-charge density, our quan
55 re dependent Seebeck coefficient, electrical resistivity and thermal conductivity measurements were p
56 eads to a drastic decrease in the electrical resistivity and thermopower simultaneously with a large
57 in few-layer WSe2 thereby locally tuning the resistivity and transport properties of the material.
59 ur-fold symmetry), so one expects a constant resistivity and zero transverse voltage, for every varph
60 We report on a low-temperature upturn in the resistivity and, at temperatures below this resistivity
65 d is characterized by a substantial in-plane resistivity anisotropy in the presence of a small in-pla
66 rface, which results from a hitherto-unknown resistivity anisotropy induced by an in-plane magnetic f
67 lations, which naturally explains the strong resistivity anisotropy or 'electronic nematic' behaviour
71 A wrapped burial had consistent small, high-resistivity anomalies for four years, then large high-re
72 ys showed a naked burial produced large, low-resistivity anomalies for up to four years, but then the
73 nsport measurement in these devices show two resistivity anomalies near 250 K and 200 K which are lik
76 usceptibility, magnetization, and electrical resistivity are studied for these new layered chalcogeni
77 have measured the angle-resolved transverse resistivity (ARTR), a sensitive indicator of electronic
78 ved performance was attributed to the higher resistivity as well as enhanced spin hall angle of the C
79 al regime also features a Planckian linear-T resistivity associated with a T-linear scattering rate a
80 ilm doped with 2.25 at.% W showed the lowest resistivity at 0.034 Omega.cm and respectable charge car
81 tum criticality, the observation of T-linear resistivity at a nematic critical point also raises the
82 the edgeless Corbino geometry in which case resistivity at the neutrality point increases exponentia
83 imetals, giving rise to their small residual resistivity at zero field and subject to strong scatteri
86 ode between different bands-we show that the resistivity bound becomes [Formula: see text] The coeffi
87 g atomic layer deposition decreased the film resistivity by seven orders of magnitude to values as lo
89 rnal magnetic field induced colossal drop of resistivity (by factor 10(4)) at B ~ 4T with further gig
90 Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MI
94 e, we observe a dissipationless longitudinal resistivity close to zero, accompanied by a well-develop
97 turn at low temperature, measurements of the resistivity, critical current density and magnetic-field
98 by the presence of an anomalous peak in the resistivity curve simultaneously with a reversal of the
100 (SdH) oscillations were identified from the resistivity data, revealing the existence of two Fermi p
101 %; while the optical bandgaps and electrical resistivity decrease with increasing substrate temperatu
102 py and resistivity measurement revealed that resistivity decreased with pressure and dramatically dro
107 in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopp
108 ivity ~10%/K, simultaneously with a very low resistivity down to 0.001 Omega.cm, making these NWs pro
109 n enhancement in the coefficient of the T(2) resistivity (due to electron-electron scattering) on app
110 uced differences in vertical bulk electrical resistivity (ER) profiles and influenced the temporal ev
115 h the enigmatic pseudogap phase ends and the resistivity exhibits an anomalous linear dependence on t
116 We obtain a rigorous upper bound on the resistivity [Formula: see text] of an electron fluid who
117 its weakly temperature-dependent electrical resistivity, graphene has failed to challenge the state-
118 sical property measurement results including resistivity, Hall coefficient (RH), and specific heat ar
119 ay diffraction, charge transport (electrical resistivity, Hall effect, magnetoresistance), magnetic m
120 temperature, moisture, flexibility and water resistivity has been investigated on the developed GOCs
121 sulfate (PS), and low temperature electrical resistivity heating (ERH), to activate PS, to achieve re
124 les and experimental study of the electrical resistivity in aluminum and copper samples under pressur
128 ies, such as multiple sign reversals of Hall resistivity in normal and mixed states, have been reveal
130 measurements are reported, which allows the resistivity in the cortex, ventricle, fiber tracts, thal
132 usceptibility, specific heat, and electrical resistivity in the layered compound YFe2Al10 demonstrate
136 re we present a method for studying material resistivity in warm dense plasmas in the laboratory, whi
138 gnetic field, both the longitudinal and Hall resistivity increase considerably and display a metal-in
139 te that, at room temperature, the electrical resistivity increases by around 4 folds from that of bul
140 ic fields, that is, unlike most metals whose resistivity increases under an external magnetic field,
141 These methods do result in samples whose resistivity increases with decreasing temperature, simil
143 ascular density decreased while the arterial resistivity index (RI) increased, followed by a decline.
152 l CDW fluctuations at high temperatures, the resistivity is linear up to highest measured T = 300 K a
155 ntration, a more significant modification in resistivity is observed for tensile-strained SmNiO(3), s
156 gap formation, whereas linear-in-temperature resistivity is observed in the normal states of the high
157 of other 'strange metals', in which T-linear resistivity is observed over an extended regime in their
158 the half-filled insulator, a sudden drop in resistivity is observed with decreasing temperature.
162 Near this composition these alloys exhibit a resistivity linear in temperature to 2 K, a linear magne
164 the weighted mobility, rho is the electrical resistivity measured in mOmega cm, T is the absolute tem
165 In addition, the low-temperature electrical resistivity measurement indicates that 3R-MoN(2) behaves
166 ro X-Ray diffraction, Raman spectroscopy and resistivity measurement revealed that resistivity decrea
167 lack of obvious superexchange pathways, and resistivity measurement shows that SrLa10Ir4O24 is an in
168 combined Seebeck coefficient and electrical resistivity measurement systems, it is now easy to measu
169 nique with Raman spectroscopy and electrical resistivity measurement to study Bi(Ni1/2Ti1/2)O3 perovs
174 lity from Seebeck coefficient and electrical resistivity measurements is introduced, which gives good
179 irst-principles calculations, and electrical resistivity measurements were carried out under high pre
182 ing in situ temperature-dependent electrical resistivity measurements, Hall effect measurements, tran
183 e estimated using Hall effect and electrical resistivity meausrements, which are are routinely perfor
184 not significantly change with extracellular resistivity, membrane capacitance, or membrane resistanc
186 resistivity and, at temperatures below this resistivity minimum, an unusual magnetoresistance which
187 h the measured charge carrier concentration, resistivity, mobility, and Seebeck coefficient, which sh
189 vity is larger than predicted using standard resistivity models, suggesting that these commonly used
190 est Antarctica in this region exhibits a low resistivity, moderately hydrated asthenosphere, and conc
193 lastic P- and S-wave velocity and electrical resistivity monitoring during controlled laboratory CO(2
195 of the longitudinal (rhoxx) and Hall (rhoxy) resistivities of disordered 2D amorphous indium-oxide fi
200 od was used in this study to extend the bulk resistivity of [Formula: see text] to a regime where the
202 re we use X-ray polarimetry to determine the resistivity of a sulphur-doped plastic target heated to
203 coefficient of coatings, MIM interfaces, and resistivity of Ag layers as a function of the Ag-TiAlN b
207 detected that are inconsistent with the high resistivity of glacier ice or dry permafrost in this reg
208 rature and magnetic field dependences of the resistivity of LNO at low temperatures are consistent wi
210 0 mum long, 35 mum wide and 2 mum thick with resistivity of order 1.316x10(-3) Omega cm obtained by u
213 tals' optical loss, and the inefficiency and resistivity of semiconductor spin-based emitters at room
214 dentifying the right drug based on the chemo-resistivity of the cancer cells is not available and it
218 nce measurements were performed to determine resistivity of the intracellular pathway (Ri), which cor
219 Several parameters that control the electric resistivity of the system were evaluated, and the cone t
221 used models will not adequately describe the resistivity of warm dense plasma related to the viscosit
222 atures, hBN is outperformed by graphene, the resistivity of which is estimated to fall below 10(-3) O
223 on barrier layer with low electrical contact resistivity, on a high-zT Se-doped AgSbTe2 substrate.
224 ers we reproduce the experimental optics and resistivity over a wide range of doping and normal-state
225 erate the dielectric strength and electrical resistivity over multiple cycles of tree formation and h
228 Dark measurements for RP crystals show high resistivity perpendicular to the layers (10(11) Omega cm
229 o zero, accompanied by a well-developed Hall resistivity plateau proportional to half of the Fermi wa
234 N) facility require maintaining the residual resistivity ratio RRR of conductors above 150 to ensure
239 resistivity, while the other grain with low resistivity reorients to align its a-axis more parallel
240 alue is consistent with the large electrical resistivity reported for beta-W in literatures and in th
243 sity structure, approximated from electrical resistivity, results in a geodynamic model that successf
246 the assumptions that the specific cytosolic resistivity (Ri) and muscle fibre volume remained consta
251 g models are discussed in attempt to explain resistivity saturation, dramatic influence of magnetic f
253 ltilayer film, we show that topological-Hall resistivity scales with the isolated-skyrmion density ov
254 key characteristics of bad metals: anomalous resistivity scaling consistent with T-linear behavior, t
255 ancies, boron interstitials, etc.), the bulk resistivity shows an intrinsic thermally activated behav
258 body effects, and find that the Coulomb drag resistivity significantly increases for temperatures <5-
261 iated with human right atrial gap-junctional resistivity such that increased total, gap-junctional, a
262 etals, primarily because the high electrical resistivity suppresses the electronic thermal conductivi
267 analysis shows much larger topological-Hall resistivity than the prevailing theory predicts for the
268 e critical point itself, a strictly T-linear resistivity that extends over a decade in temperature T.
269 anges in their microstructure and electrical resistivity, the large spin Hall angles measured are fou
270 terials, exhibit a linear in temperature (T) resistivity, the origin of which is not well understood.
271 nanowire and bulk silver, a unified thermal resistivity (Theta ~ T/k ) is used to elucidate the elec
272 data reveal a lithosphere of high electrical resistivity to at least 150 km depth, implying a cold st
273 sitive to protease digestion and had greater resistivity to nanoindentation by atomic force microscop
274 y with monolayer hBN, for which we measure a resistivity to proton flow of about 10 Omega cm(2) and a
276 aluate groundwater discharge, and electrical resistivity tomography (ERT) was used to examine subsurf
277 onstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal
278 toresponse, whereas the SL materials exhibit resistivity trends that are dominated by ionic transport
280 ring results in a decrease in the electrical resistivity under pressure, which is more pronounced for
283 as evidenced by a magnetic field-independent resistivity upturn with a clear transition from logarith
284 l films, which exhibit a low-temperature (T) resistivity upturn with a pronounced T(1/2) dependence,
287 ency method this allowed obtaining intrinsic resistivity values of brain tissues and structures with
288 urements confirm that it is insulating, with resistivity values similar to those of boron nitride gro
289 h Cx43 expression showed no correlation with resistivity values, the proportional expression of the 2
291 and inorganic nanowires (concentration), and resistivity was within the lower ranges reported for mod
294 idate the origin of extremely low electrical resistivity which does not compromise the Seebeck coeffi
295 conditions in the grain with high electrical resistivity, while the other grain with low resistivity
296 rlies an increase in human atrial myocardial resistivity with age, this relationship was investigated
298 influence of magnetic field and pressure on resistivity with the focus on possible manifestation of
300 amorphous with a weak temperature-dependent resistivity with values ranging between 150 and 300 [For