ライフサイエンスコーパス: sapphire

1 rmacogenomic Interactions by Race-ethnicity (SAPPHIRE).

2 rmacogenomic Interactions by Race-ethnicity (SAPPHIRE).

3 ickers hardness of 20 GPa, which is close to sapphire.

4 indicated by an ~ 80% reduction when cutting sapphire.

5 headgroups exposed on the setal surface and sapphire.

6 o commercial alumina and approaching that of sapphire.

7 background cell made from single-crystalline sapphire.

8 es to characterize material modifications in sapphire.

9 on non-polar GaN micro-rod arrays on r-plane sapphire.

10 ergrowth method employing GaN microrods on m-sapphire.

11 properties compared to MoS2 grown on c-plane sapphire.

12 that of traditionally grown MoS2 on c-plane sapphire.

13 showed that the growth of Ca(3)Co(4)O(9) on Sapphire (0001) follows the island growth-mode.

14 Co(4)O(9) thin films grown on single-crystal Sapphire (0001) substrate.

15 msec) than with SASHA (13 msec; P < .05) and SAPPHIRE (12 msec; P < .05).

16 s in chipping area: Si (~ 23%), SiC (~ 36%), sapphire (~ 45%), and PSS (~ 33%).

17 he Raman peak area obtained at a sapphire or sapphire/50 nm Au interface.

18 5.6 msec; P = .07) but higher precision than SAPPHIRE (6.8 msec; P = .002) and SASHA (8.7 msec; P < .

19 using Nd:YAG (1064 nm) and tunable titanium-sapphire (700-990 nm) laser microbeam optical traps.

20 SAPPHIRE, a double-blind, placebo-controlled, phase 3 tr

21 m-well (MQW) light-emitting diodes (LEDs) on sapphire, achieved by overgrowing on a micro-rod templat

22 Steps on the sapphire act as sites for transition metal dichalcogenid

23 Sapphire (Al(2)O(3)) is a commonly used dielectric mater

24 Sapphire (Al2O3) crystals are used below 100 GPa as anvi

25 ilms grown on either (010) beta-Ga(2)O(3) or sapphire, all show a very broad PL spectrum with intense

26 laser-induced microexplosion confined inside sapphire (alpha-Al(2)O(3)).

27 re Co deposition on fully hydroxylated clean sapphire (alpha-Al2O3) produces a surface chemical react

28 Epitaxial films exhibited 3D growth on sapphire and 2D single-crystal quality on GaN, exhibitin

29 collisions with two distinctive substrates, sapphire and aluminum, across a broad range of collision

30 s by molecular-beam epitaxy (MBE) on c-plane sapphire and GaN templates is described herein.

31 atient-level data from two previous studies (Sapphire and Protocolized Care for Early Septic Shock).

32 Overall, SiC, sapphire and PSS were most affected by chipping, due to

33 were needed for the higher hardness of SiC, sapphire and PSS.

34 nd optoelectronic devices on commonly used c-sapphire and Si substrates.

35 s of two prototypical samples, i.e. in (100) sapphire and x-cut lithium niobate (LiNbO(3)).

36 st level of kidney-sparing sepsis bundle) in Sapphire, and 14% (two negative tests) to 46% (for the h

37 to reduce chipping when used to cut Si, SiC, sapphire, and patterned sapphire substrates (PSS).

38 k centrosymmetric materials like silicon and sapphire are non-piezoelectric and commonly used as qubi

39 erence by using tantalum as a base layer and sapphire as a substrate(1).

40 ms have epitaxial registry to the underlying sapphire, as revealed by x-ray diffraction, reflection h

41 lms grown on either (-201) beta-Ga(2)O(3) or sapphire, as well as thick aluminum gallium oxide films

42 ts at High Risk for Endarterectomy registry [SAPPHIRE]) as well as registry data (ACCULINK for Revasc

43 ed silica boson peak (~130 cm(-1)); distinct sapphire ball-lens peaks (380, 417, 646, and 751 cm(-1))

44 from high-energy (500 muJ), 45-fs, 800-nm Ti:sapphire-based femtosecond laser electrospray mass spect

45 Above 100 GPa shock pressures, sapphire becomes opaque and electrically conducting beca

46 graphene supported on SiO(2) and Al(2)O(3) (sapphire), but negligibly on alkyl-terminated and hexago

47 cient laser modification of fused silica and sapphire by means of a burst of femtosecond pulses havin

48 ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, usi

49 tional growth direction of WSe(2) on c-plane sapphire by metal-organic chemical vapour deposition.

50 ical field to drive the semimetallization in sapphire, calcium fluoride and quartz and to compare thi

51 f substrate, where growth of MoS2 on r-plane sapphire can yield >100x enhancement in PL and carrier l

52 n situ synchrotron XRD method using a quartz/sapphire capillary tube as the synthesis reactor.

53 chrotron single-crystal X-ray diffraction in sapphire-capillary (p < 0.15 GPa) and diamond-anvil (0.1

54 We replicated associations in the SAPPHIRE cohort of African Americans (n=1056).

55 rmacogenomic Interactions by Race-ethnicity (SAPPHIRE) cohort.

56 a Thermo Finnigan Neptune MC-ICPMS and a Nu Sapphire CRC-MC-ICPMS in CRC mode.

57 FPALM images of PA-GFP on a terraced sapphire crystal surface were compared with atomic force

58 e key step is found to be the use of m-plane sapphire crystal.

59 Our calculations indicate shocked sapphire does not metallize by band overlap at ~300 GPa,

60 t the short-wavelength limit of the titanium:sapphire excitation source.

61 ram for Hypertension and Insulin Resistance (SAPPHIRe) family study, and 759 participants were follow

62 ond laser is comparable in precision to a Ti:Sapphire femtosecond laser (1-2 micrometres), but with a

63 An 800-nm Ti:Sapphire femtosecond laser oscillator with a 27-fs pulse

64 An 800-nm Ti:Sapphire femtosecond laser with a 100-fs pulse duration

65 -photon absorbance of a frequency-doubled Ti:sapphire femtosecond laser.

66 rface electrons in n-doped samples with a Ti:sapphire femtosecond laser.

67 a laser scanning microscope with a titanium sapphire femtosecond pulsed laser and transmission optic

68 s critical issue by using gallium nitride on sapphire for scalable photonic-phononic integrated circu

69 to generate 390-520 nm light from a 1 GHz Ti:sapphire frequency comb.

70 e grown on h-BN on patterned and unpatterned sapphire) from the epitaxial growth to device performanc

71 on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were tra

72 oform of FGF2 with green fluorescent protein-sapphire (GFPsaph).

73 ensional transition metal dichalcogenides on sapphire has emerged as a promising route to wafer-scale

74 m a challenging model system, titanium-doped sapphire, illustrate the viability of the directed assem

75 In particular, the sapphire in-plane vibrations between 350 cm(-1) to 800 c

76 rface containing a gold film relative to the sapphire interface by a factor of 4.3-4.6 for aqueous py

77 signal was recorded from a monolayer at the sapphire interface.

78 The core structure of dislocations in sapphire introduced by high-temperature plastic deformat

79 onger-term results to the highly experienced SAPPHIRE Investigators.

80 these high shock temperatures and pressures sapphire is in thermal equilibrium.

81 Laser ablation was executed with a Titanium:Sapphire laser (800-nm wavelength), focused with a 0.15-

82 Raman spectra are obtained using a 1 kHz Ti:Sapphire laser apparatus that provides <3 ps visible (46

83 ly mode-locked, pulse-picked femto-second Ti-sapphire laser as the excitation source for the determin

84 the femtosecond pulses from a mode-locked Ti:sapphire laser at 885 nm.

85 earlier studies using a femtosecond titanium:sapphire laser costing more than 100K, physically robust

86 predict that by using 700-nm light from a Ti:sapphire laser focused with a 1.3-NA objective, essentia

87 Here, we show that the Ti:Sapphire laser in a multiphoton microscope can be used t

88 d (750 nm) output from a modelocked titanium:sapphire laser is focused at the outlet of a 0.6-micron

89 ing-gallery-mode resonators, we realize a Ti:sapphire laser operating with an ultralow, sub-milliwatt

90 97 nm from a tunable frequency-quadrupled Ti:sapphire laser provided high-quality UVRR spectra, conta

91 previously available, thanks to kilohertz Ti:sapphire laser technology, with frequency-quadrupling in

92 opulse diode laser trabeculoplasty, titanium sapphire laser trabeculoplasty and excimer laser trabecu

93 For imaging, a pulsed Ti:sapphire laser was used for sample excitation and fluore

94 experimentally in a Kerr-lens mode-locked Ti:Sapphire laser with quantitative agreement to the simula

95 ic Nd:YAG, and the femtosecond NIR 800 nm Ti:sapphire laser with regard to the type(s) of damage and

96 dded) were also imaged with a mode-locked Ti-Sapphire laser, (76 MHz repetition rate, 150 femtosecond

97 ne disruptions inflicted by a mode-locked Ti:sapphire laser, even those initially smaller than hemogl

98 ally, we demonstrate a tunable integrated Ti:sapphire laser, which can be pumped with low-cost, minia

99 pphire lasers, such as massively scalable Ti:sapphire laser-array systems for several applications.

100 in the form of femtosecond pulses from a Ti:sapphire laser.

101 rate, as compared to the standard 80-MHz Ti:Sapphire laser.

102 frequency (2omega) of a femtosecond (fs) Ti:sapphire laser.

103 , Cu, Mo, Gd, and W) using 40 fs, 800 nm Ti: Sapphire laser.

104 owered by a 800-nm-wavelength mode-locked Ti:sapphire laser.

105 depths of MPM imaging, as compared to the Ti:Sapphire laser: A depth of ~ 860 um was obtained by imag

106 ins is limited by the low power output of Ti-Sapphire lasers above 1,000 nm.

107 Ti:sapphire lasers are unmatched in bandwidth and tuning ra

108 ectra of plutonium have been studied with Ti:Sapphire lasers for the development of efficient laser i

109 This opens the doors to new modalities of Ti:sapphire lasers, such as massively scalable Ti:sapphire

110 een met using expensive femtosecond titanium:sapphire lasers.

111 Titanium:sapphire (Ti:sapphire) lasers have been essential for advancing funda

112 grees orientation relative to the underlying sapphire lattice.

113 nstrated using 100 fs pulses from a titanium-sapphire mode-locked laser to achieve molecular excitati

114 pic measurements using a state-of-the-art Nu Sapphire multicollector inductively coupled plasma sourc

115 th 300-1000 psi of methane in single-crystal sapphire NMR tubes; clean second-order behavior was obta

116 r susceptibilities (7th, 9th, and 11th) from sapphire of the same order as the measured high harmonic

117 re we demonstrate a monocrystalline titanium:sapphire-on-insulator (Ti:SaOI) photonics platform that

118 The generalizability of trials like the SAPPHIRE or CREST to the Medicare population may be limi

119 ompared to the Raman peak area obtained at a sapphire or sapphire/50 nm Au interface.

120 analytes as a function of incident angle at sapphire or sapphire/smooth 50 nm gold interfaces using

121 ultiple quantum wells (MQWs) integrated on c-sapphire or Si substrates.

122 grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obt

123 sorption of pulses of 800-nm light from a Ti:sapphire oscillator, making them excellent candidate sto

124 y depositing a layer of copper powder onto a sapphire plate, then pressing the plate against the part

125 uits through exploiting a gallium-nitride-on-sapphire platform, which provides strong confinement and

126 s the acid etch steps common to conventional sapphire preparation, suggesting potential industrial ap

127 In contrast to measurements at a bare sapphire prism, increased surface sensitivity and signal

128 ide resonance (PWR) interface consisted of a sapphire prism/49 to 50 nm Au/548 to 630 nm SiO(2) and a

129 The approach based on the SAPPHIRE pulse sequence enhanced with a block for solven

130 ariate reference signals of fused silica and sapphire Raman signals generated from a ball-lens fiber-

131 Overall, SAPPHIRE results build on findings from the phase 2 TOPA

132 The maser consisted of a sapphire ring housing a crystal of pentacene-doped p-ter

133 Main Results: The meta-analyzed results from SAPPHIRE, SAGE II, and the GCPD-A identified rs11078928

134 Here, we investigate the sapphire-setae contact interface using interface-sensiti

135 ix plum cultivars ('Laetitia', 'Primetime', 'Sapphire', 'Showtime', 'Songold' and 'Souvenir') produce

136 chemical vapour deposited graphene films on sapphire, silicon dioxide/silicon and germanium.

137 In the Sapphire simulation, 45 of 203 patients (22%) with sepsi

138 a function of incident angle at sapphire or sapphire/smooth 50 nm gold interfaces using 785 nm excit

139 ring resonator (OMR) based on the silicon-on-sapphire (SOS) platform for microwave-to-optical frequen

140 rom hybrid Vitis vinifera L. varieties Sweet sapphire (SP) and Sweet surprise (SU) and were character

141 concentrations from the NOESY-presat-PSYCHE-SAPPHIRE spectrum recorded on the extracellular medium.

142 neration (DFG) using spectrally broadened Ti:Sapphire spectrum, followed by optical parametric amplif

143 requencies traveling through randomly packed sapphire spheres subjected to uniaxial compression.

144 A bi-refringent sapphire standard was measured to confirm its capabiliti

145 CEA in patients at increased surgical risk, SAPPHIRE (Stenting and Angioplasty with Protection in Pa

146 Previously, the pivotal SAPPHIRE (Stenting and Angioplasty with Protection of Pa

147 A mullite and sapphire structure predominates in these phases.

148 We stratified patients enrolled in the Sapphire study into three groups-those with a clinical d

149 In the phase III SAPPHIRE study, patients with advanced non-oncogenic dri

150 In this secondary analysis of the Sapphire study, we examined biomarkers of cell cycle arr

151 evaluated African American participants from SAPPHIRE (Study of Asthma Phenotypes and Pharmacogenomic

152 the brine solution is segregated next to the sapphire substrate after the formation of the ice phase.

153 l hydrates prefer to crystallize next to the sapphire substrate instead of the ice crystals and MgCl2

154 f sodium ions next to the negatively charged sapphire substrate may be responsible for disrupting the

155 s were performed side-by-side on a single 2" sapphire substrate to minimize experimental sampling err

156 th various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted

157 ent salts, MgCl2, CaCl2, and NaCl, next to a sapphire substrate using surface sensitive infrared-visi

158 suring UV-vis spectra of PSbs deposited on a sapphire substrate via spin coating and by connecting th

159 nt a setup comprising a thermally conductive sapphire substrate with light-absorptive nano-coating, a

160 formance with those of LEDs grown on c-plane sapphire substrate.

161 he unpolished side of a single-side-polished sapphire substrate.

162 magnetic anisotropy can be grown on c-plane sapphire substrate.

163 sity increased for the LEDs grown on c-plane sapphire substrate.

164 ccurs during the impact, especially with the sapphire substrate.

165 interface properties of exfoliated InSe on a sapphire substrate.

166 xy between monolayer WS2 and MoS2 on a c-cut sapphire substrate.

167 function of pH and the surface charge of the sapphire substrate.

168 formation of NaCl.2H2O crystals next to the sapphire substrate.

169 dy the freezing of a NaCl solution next to a sapphire substrate.

170 used to cut Si, SiC, sapphire, and patterned sapphire substrates (PSS).

171 he epitaxial selective area growth of GaN on sapphire substrates and utilize them to enhance light ex

172 ization were grown on a-plane single-crystal sapphire substrates by direct current magnetron sputteri

173 ty cuprous iodide (CuI) film grown on Si and sapphire substrates by molecular beam epitaxy.

174 0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor

175 1) foil and ultraflat single-crystal Cu(111)/sapphire substrates, respectively.

176 quilts perform even better in GaN devices on sapphire substrates.

177 W) arrays have been epitaxially grown on GaN/sapphire substrates.

178 on standard epitaxial and patterned surface sapphire substrates.

179 ntalum-based materials platform and annealed sapphire substrates.

180 of film thickness in nanocomposite films on sapphire substrates.

181 rable with that grown on conventional SiC or sapphire substrates.

182 sition temperatures of water in contact with sapphire substrates.

183 ion of high-quality lamellae of SrTiO(3) and sapphire, suggesting that the robotic FIB system may be

184 For validation, a sapphire-supported (SaS) nanopore chip with a 100 times

185 egregation of concentrated brine next to the sapphire surface as we cool the system down to the regio

186 tied to growth conditions via changes in the sapphire surface chemistry that control the step edge lo

187 S nanowires growing on both flat and faceted sapphire surfaces.

188 a key step towards the democratization of Ti:sapphire technology through a three-orders-of-magnitude

189 zation, cost reduction and scalability of Ti:sapphire technology.

190 f materials including silicon, fused silica, sapphire, thermal oxide, and lithium niobate.

191 Anisotropic wet etching of sapphire through micro-patterned triangular masks is use

192 Titanium:sapphire (Ti:sapphire) lasers have been essential for ad

193 gram in Hypertension and Insulin Resistance (SAPPHIRe) to investigate associations between CRP polymo

194 pin Amplifier for Particle PHysIcs REsearch (SAPPHIRE) to resonantly search for exotic interactions,

195 on of 2D MoS(2) flakes, epitaxially grown on sapphire, to develop an optical biosensor for the breast

196 Few patients met the SAPPHIRE trial or CREST enrollment criteria primarily be

197 SAPPHIRE Trial registration number, NCT03990363.

198 (5.4%) was similar to the rate seen with the SAPPHIRE trial stent cohort (4.9%).

199 The SAPPHIRE trial was designed to assess albuminuria-loweri

200 and exclusion criteria matched those of the SAPPHIRE trial.

201 erformance criteria (OPC) established by the SAPPHIRE trial.

202 in Patients at High Risk for Endarterectomy (SAPPHIRE) trial or Carotid Revascularization Endarterect

203 ll comprises a standard, 5 mm single-crystal sapphire tube that has been fitted to a section of a rel

204 asily extendable across much of the titanium sapphire tuning range for detection of other trace gases

205 arder than cubic delta-NbN; it is as hard as sapphire, ultra-incompressible and has a high shear rigi

206 ss were successfully grown on the c-plane of sapphire using sputter beam epitaxy.

207 rowth temperatures we observe etching of the sapphire wafer surface by the flux from the atomic carbo

208 Cu (111) thin film across a two-inch c-plane sapphire wafer.

209 MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of 1400

210 d faceted surfaces of commercially available sapphire wafers to guide the self-assembly of block copo

211 for forming nanopore membranes on insulating sapphire wafers to promote low-noise nanopore sensing.

212 highly oriented monolayer graphene films on sapphire wafers.

213 High mobility Si(0.15) Ge(0.85) film on sapphire was grown at 890 degrees C substrate temperatur

214 The epitaxial growth of the BaM film on sapphire was revealed by high-resolution transmission el

215 ontrolled gallium nanoparticles deposited on sapphire were explored as alternative substrates to enha

216 Films on sapphire were n-type with electronic mobilities as high

217 rmacogenomic Interactions by Race-Ethnicity (SAPPHIRE) who underwent 6 weeks of monitored ICS therapy

218 phase, and that shock-wave experiments using sapphire windows need to be re-evaluated.

219 We demonstrate deposition of carbon on sapphire with carbon deposition rates up to 12 nm/h.

220 ctra of the graphene layers grown on hBN and sapphire with the sublimation carbon source and the atom

221 Comparison with films grown on sapphire without rips shows a combined contribution from

222 SASHA and SAPPHIRE yield higher accuracy, lower precision, and sim