ライフサイエンスコーパス: semiconductor

1 rocess governing the optical properties of a semiconductor.

2 istence of electrons and holes in an undoped semiconductor.

3 d the electrical properties and low band gap semiconductor.

4 ontamination or physisorption on the organic semiconductor.

5 perimental observation of Weyl fermions in a semiconductor.

6 nsistors (EGOFETs) based on a small molecule semiconductor.

7 toexcited electron-hole pairs on a polymeric semiconductor.

8 g magnetic dopants to form a dilute magnetic semiconductor.

9 it is one of the most studied wide band gap semiconductors.

10 rarely explored in two-dimensional magnetic semiconductors.

11 c optical properties of atoms, molecules and semiconductors.

12 s obscure for the emerging hybrid perovskite semiconductors.

13 ntages of topological materials to versatile semiconductors.

14 n-polaritons (SPPs) to photon emission in 2D semiconductors.

15 t for understanding heat conduction in doped semiconductors.

16 a new class of permanently porous 3D organic semiconductors.

17 ed by single-crystalline germanium and III-V semiconductors.

18 ter interactions in two-dimensional magnetic semiconductors.

19 crystals in a fractal scaffold of high-index semiconductors.

20 n the charge transport properties of organic semiconductors.

21 rent binary InSb, one of the best electronic semiconductors.

22 kable photovoltaic performance of such A-D-A semiconductors.

23 of buckybowls for the development of organic semiconductors.

24 o-noise ratio compared with small-bandgap 2D semiconductors.

25 el which is often used in emissive inorganic semiconductors.

26 ted charge recombination in the conventional semiconductors.

27 attention than counterparts from metals and semiconductors.

28 decade, with its primary focus on metals and semiconductors.

29 ghlights their importance in atomically thin semiconductors.

30 with oxide perovskites or more conventional semiconductors.

31 reliable applications using two-dimensional semiconductors.

32 EGOFETs based on a blend of soluble organic semiconductor 2,8-Difluoro-5,11-bis(triethylsilylethynyl

33 dlesden-Popper hybrid lead iodide perovskite semiconductors, 2D (BA)(2)(MA)Pb(2)I(7) (with MA = CH(3)

34 Van der Waals (vdW) semiconductors, a newly emerged class of materials, are

35 gnment between the quasi-Fermi levels of the semiconductors adjacent to the junction/interface under

36 rs, but by combining metals, insulators, and semiconductors all within a single strand of fiber, an e

37 on they are not well characterized in random semiconductor alloys such as silicon germanium.

38 The biaxial van der Waals semiconductor alpha-phase molybdenum trioxide (alpha-MoO

39 to their potential in studying processes in semiconductor and (supra)molecular photocatalysts.

40 tronics; high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many oth

41 tanding of the interface between the organic semiconductor and the drain electrode is needed to reach

42 increasing density of surface states of the semiconductor and the sliding load.

43 ey bridge the gap between intermetallics and semiconductors and can have unexpected structures and pr

44 ation and stabilization of halide perovskite semiconductors and demonstrate a materials platform for

45 notonically, much similar to other inorganic semiconductors and display surprisingly large redshift f

46 etion region induces polar structures in the semiconductors and generates substantial piezoelectric a

47 face charge is ubiquitous on the surfaces of semiconductors and insulators, and as a result, substrat

48 ersible way of modifying the conductivity of semiconductors and it is expected to have profound impli

49 the ill-defined relative energetics between semiconductors and molecules used in these studies.

50 erfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline

51 al analysis of the best performing molecular semiconductors and of the inherent charge transport phys

52 ork expands the spectrum of Weyl matter into semiconductors and offers a new platform to design novel

53 ated trap states characteristic of inorganic semiconductors and the ill-defined relative energetics b

54 However, unlike semiconductors and two-dimensional electron gases where

55 barriers against the migration of metal into semiconductors, and be thermally, chemically and mechani

56 Electronic inks, including conductors, semiconductors, and dielectrics, are drawn on-demand in

57 s to various applications including sensors, semiconductors, and flexible transparent electrodes.

58 ased upon metals, metal oxides, chalcogenide semiconductors, and proteins.

59 ric materials of rubbery conductors, rubbery semiconductors, and rubbery dielectrics.

60 A general problem for semiconductor applications is that very slow deposition

61 p 2D layered material that has potential for semiconductor applications.

62 Organic semiconductors are commonly used as charge-extraction la

63 n boundaries (GBs) in conventional inorganic semiconductors are frequently considered as detrimental

64 rgy levels, and low production cost, organic semiconductors are ideal for photoelectrochemical (PEC)

65 Properties of semiconductors are largely defined by crystal imperfecti

66 orbitals, the absorption spectra of organic semiconductors are not continuous like those in traditio

67 Like silicon, single crystals of organic semiconductors are pursued to attain intrinsic charge tr

68 Biofabricated semiconductor arrays exhibit smaller channel pitches tha

69 eering to open up a wider palette of organic semiconductors as OECTs that can be gated by aqueous sol

70 ilicon electrorefining, and the synthesis of semiconductors as well as nanostructures for energy stor

71 As organic semiconductors attract increasing attention to applicati

72 enable the replacement of (3)He counters by semiconductor-based neutron detectors.

73 However, organic-semiconductor-based photoelectrodes have not been extens

74 BiOCl and the three-dimensionally connected semiconductor Bi(2)O(2)Se.

75 y spectra of a significant number of organic semiconductor blends.

76 om temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and comp

77 Our results suggest that the 2D semiconductors can provide an experimental platform that

78 consideration (not secondary to catalyst) in semiconductor|catalyst hybrids for PEC-HER.

79 Aqueous-phase approaches to semiconductor CdS magic-size clusters (MSCs) and the for

80 burg Landau equation, Poisson's equation and semiconductor charge equations.

81 ibers have not rapidly increased compared to semiconductor chip technology, for example.

82 ever, conventional complementary metal oxide semiconductor (CMOS) circuit designs can still suffer lo

83 troscopy employing complementary metal oxide semiconductor (CMOS) compatible thin film waveguides and

84 ing deposition and complementary-metal-oxide semiconductor (CMOS) processes.

85 are obtained in a complementary metal-oxide-semiconductor (CMOS)-compatible process.

86 the p-n junction effect in the bR and p-type semiconductor combined electrodes, we reached several im

87 ies, such as biotechnology, neurobiology and semiconductors, concentrate disproportionately in a few

88 Semiconductors could provide the next generation of neut

89 Colloidal quantum dots (QDs) are nanoscale semiconductor crystals with surface ligands that enable

90 nkjet printing with an optimal 3-dimensional semiconductor density on a paper substrate.

91 Here we demonstrate a nanotechnology-based semiconductor detector using cross-nanowire networks tha

92 ar for the construction of direct-conversion semiconductor detectors.

93 r applications ranging from high-performance semiconductor device channels to atomically thin molecul

94 ing is a powerful tool with which to enhance semiconductor device performance(1,2).

95 n the energy efficiency, and even destroys a semiconductor device.

96 ed through a CMOS (complementary metal oxide semiconductor) device and transmitted to a cell-phone ov

97 s proposed to boost the energy efficiency of semiconductor devices by using the self-adaptive evapora

98 to enhance and broaden the functionality of semiconductor devices for advanced electronics and photo

99 ls and engineering of near-surface states of semiconductor devices.

100 g to enable the continued miniaturization of semiconductor devices.

101 nolayer regimes, leading to diluted magnetic semiconductor (DMS) materials.

102 hence, the minimum surface potential in the semiconductor, does not exceed the applied voltage (in-s

103 to the planar Si in an electrolyte-insulator-semiconductor (EIS) structure.

104 Electrolyte-insulator-semiconductor (EIS) structures as well as silicon (Si) n

105 Unlike metal or semiconductor electrodes, the surface charge resulting f

106 f high-performance, ultra-stable metal oxide semiconductor electronics with simple binary composition

107 patible with CMOS (complementary metal-oxide-semiconductor) electronics.

108 Zinc oxide (ZnO) is a stable, direct bandgap semiconductor emitting in the UV with a multitude of tec

109 to aggregate with five prototypical polymer semiconductors exhibiting different energy levels and st

110 In organic semiconductors exhibiting singlet fission, the geometric

111 Moreover, the compatibility with semiconductor fabrication techniques(21) may allow for s

112 ystems because they can be implemented using semiconductor fabrication technology(2-5).

113 is expected to have profound implications on semiconductor field.

114 Conventional epitaxy of semiconductor films requires a compatible single crystal

115 of beta gallium oxide (beta-Ga(2)O(3)) as a semiconductor for high power/high temperature devices an

116 nterest in the potential application of this semiconductor for thermal management.

117 tremendous potential of these chiral hybrid semiconductors for controlling both spin and charge degr

118 o give them hope that the field of molecular semiconductors for logic operations is not engaged into

119 skite family, have recently emerged as novel semiconductors for organic ferroelectrics and promise th

120 y indicator (Xi) to prescreen candidate bulk semiconductors for use in next-generation deformable or

121 V, II-VI and transition metal dichalcogenide semiconductors form the foundation of modern electronics

122 which can be produced en masse with current semiconductor foundry protocols for chip manufacturing.

123 Here, bottom-up synthesized layered semiconductor (Ge(1-) (x) Sn(x) S) nanoribbons with an a

124 t-friendly and earth-abundant sulfide binary semiconductor, GeS.

125 polycrystalline silicon and amorphous oxide semiconductors have partly replaced a-Si:H channel mater

126 Ultrathin van der Waals semiconductors have shown extraordinary optoelectronic a

127 2D semiconductors have shown great potential for applicatio

128 conductor by means of a Na (x) CoO(2)/CeO(2) semiconductor heterostructure, in which a field-induced

129 Semiconductor heterostructures have enabled a great vari

130 s, akin to two-dimensional electron gases in semiconductor heterostructures.

131 contact between metal electrode and organic semiconductor, highlighting their power to overcome ener

132 Semiconductor III-V photonic crystal (PC) laser is regar

133 entally unknown in even the best studied vdW semiconductors, impeding the understanding and utilizati

134 element based on a fully light-modulated 2D semiconductor in a simple reconfigurable phototransistor

135 Tailoring the doping of semiconductors in heterojunction solar cells shows treme

136 and, to date, the true potential of organic semiconductors in this spectral range (800-2500 nm) rema

137 ns-formed by noble metal and centrosymmetric semiconductors, including niobium-doped strontium titani

138 d that the tribo-current between two sliding semiconductors increases with increasing density of surf

139 is expected to be widely adopted in current semiconductor industry to improve its energy efficiency.

140 The explosive growth in semiconductor integrated circuits was made possible in l

141 s a 'gate' can be used to modulate the metal-semiconductor interface Schottky barrier and further tun

142 y transduction mechanism arises at the metal/semiconductor interface.

143 vice consisting of patterned organic polymer semiconductors interfaced with an electrolyte solution i

144 this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding an

145 the synthetic literature on this quaternary semiconductor is sparse and it has yet to be deposited a

146 tum transfer between electron-spin qubits in semiconductors is important for realising large-scale qu

147 as been widely discussed, while CE involving semiconductors is only recently.

148 es compatible with complementary metal-oxide-semiconductors is technically challenging.

149 The key in semiconductors is that dopants and defects can tune thei

150 One key challenge with 2D semiconductors is to avoid the formation of charge scatt

151 compact, self-injection locked, Fabry-Perot semiconductor laser diode with high output power at 493

152 substantiate through an amplitude-modulated semiconductor laser experiment.

153 itation and exciton recombination in the 2DC semiconductor launch propagating SPPs in the OPEN film.

154 work exhibits great potential for use in 2D semiconductor LEFETs for novel optoelectronics capable o

155 Here we report on the semiconductor LiInP(2)Se(6) and demonstrate its potentia

156 electrochemical biosensors constructed with semiconductor manufacturing technology (SMT)-produced el

157 ntacene (TIPS pentacene) was used as a model semiconductor material to mix with different amount of P

158 While semiconductor materials feature much higher nonlinear co

159 The CMP process for arsenide-based semiconductor materials produces wastewater with co-occu

160 ich is in contrast to many other traditional semiconductor materials.

161 t, according to which the growth of wurtzite semiconductors may often be described as a process of el

162 Additionally, the metal-semiconductor-metal (MSM) photodetector on beta-Ga(2)O(3

163 Here, we investigate semiconductor/metal (Schottky) junctions formed between

164 rmance materials, from inorganic and organic semiconductors, metals and dielectrics, to ceramics and

165 two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals.

166 nsulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks through phase-field simulati

167 Quantum fluids of light are realized in semiconductor microcavities using exciton-polaritons, so

168 rium exciton-polariton condensates in planar semiconductor microcavities.

169 demonstrate how readily available spherical semiconductor microstructures facilitate engineering of

170 eatured by lanthanides is compensated by the semiconductor moiety, which harvests the optical energy

171 Substitutional doping in 2D semiconductor MoS(2) was investigated by charge transiti

172 ings of intrinsic deep impurity levels in 2D semiconductors MoS(2) may be applicable to diverse novel

173 capacitance response compared to Metal-Oxide-Semiconductor (MOS) capacitor.

174 undamental challenges related to their metal-semiconductor (MS) contacts, which limit the performance

175 is represented by colloidal lanthanide-doped semiconductor nanocrystals (LnSNCs).

176 Semiconductor nanocrystals are promising photocatalysts

177 f of concept for the use of quantum confined semiconductor nanocrystals as photoinitiators, coining t

178 Inorganic semiconductor nanocrystals interfaced with spin-triplet

179 Semiconductor nanocrystals provide a mechanism to conver

180 tonic nature of light amplification in II-VI semiconductor nanocrystals.

181 that can potentially allow the deposition of semiconductor nanodots on a substrate.

182 ient interface to quantum light and advanced semiconductor nanofabrication technologies.

183 Semiconductor nanomaterials feature size-tunable energy

184 Finally, the recent introduction of semiconductor nanomaterials into hybrid TADPL constructs

185 e tension and electrical conductivity of the semiconductor nanosuspensions.

186 Semiconductor nanowires (NWs) capped with metal nanopart

187 Semiconductor nanowires have been playing a crucial role

188 Enhancing ferromagnetism in these semiconductors not only represents a key step toward mod

189 were used as catalysts for NW growth to form semiconductor NWs capped with metallic particles (Au, Ag

190 iqueness of a model of tetrahedral amorphous semiconductors obtained via inversion of diffraction dat

191 exoelectronic effect in bulk centrosymmetric semiconductors of Si, TiO(2) and Nb-SrTiO(3) with high s

192 onstrate the direct laser refrigeration of a semiconductor optomechanical resonator >20 K below room

193 distinct from either conventional inorganic semiconductors or organic conductors.

194 Electronic properties of organic semiconductor (OSC) thin films are largely determined by

195 ise control of the microstructure in organic semiconductors (OSCs) is essential for developing high-p

196 To begin with, we have introduced organic semiconductors (OSCs), followed by their applications in

197 Here, various molecular organic semiconductors (OSCs), with known excitonic up- and down

198 in controlling carrier transport in organic semiconductors (OSCs).

199 -1) , which is the highest value reported in semiconductor oxides.

200 rategies for tuning electrical properties of semiconductors, particularly thermoelectric materials.

201 e report high-performance and stable organic-semiconductors photoanodes consisting of p-type polymers

202 bon nitride (g-C(3)N(4)) is a robust organic semiconductor photocatalyst with proven H(2) evolution a

203 ighlights the utility of using heterogeneous semiconductor photocatalysts such as TiO(2) for promotin

204 mance represents a new benchmark for organic semiconductor photocathodes for solar fuel production an

205 on of 'hot' and universal quantum logic in a semiconductor platform paves the way for quantum integra

206 100 times lower compared to that in previous semiconductor platforms.

207 he design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm(

208 uator system that seamlessly integrates with semiconductor processing and responds to standard electr

209 iability is a problem for the scalability of semiconductor quantum devices.

210 e-controlled emission wavelengths, colloidal semiconductor quantum dots (QDs) are attractive material

211 Semiconductor quantum dots (QDs) have attracted tremendo

212 Delocalization of excitons within semiconductor quantum dots (QDs) into states at the inte

213 Here, we design and synthesize semiconductor quantum dots (QDs) with SWIR emission base

214 the advances that led to the integration of semiconductor quantum dots in thermally activated delaye

215 Spin qubit in semiconductor quantum dots is a promising candidate for

216 ing and spatial separation, while TF-labeled semiconductor quantum dots serve as bright fluorescent i

217 ion processing, individual electron spins in semiconductor quantum dots stand out for their long cohe

218 ow that for electrons in silicon metal-oxide-semiconductor quantum dots the hyperfine interaction is

219 ale with excellent optical properties (e.g., semiconductor quantum dots, perovskite nanocrystals, and

220 tum teleportation of electron spin qubits in semiconductor quantum dots.

221 Colloidal semiconductor quantum wells have emerged as a promising

222 astrongly couple intersubband transitions of semiconductor quantum wells to the photonic mode of a me

223 as been long-sought within bulk indirect-gap semiconductors, quantum wells, and 2D material layers, a

224 tion or extraction efficiency enhancement in semiconductors relevant to improved performance in solar

225 Organic semiconductors require an energetic offset in order to p

226 The example of CuInSe(2) photovoltaic semiconductor reveals that single phase material crosses

227 s, providing a first step towards connecting semiconductor ring lasers and microresonator frequency c

228 Here we show that, despite this notion, semiconductor ring lasers with ultrafast gain recovery(9

229 in recent years, factors affecting an n-type semiconductor's properties as a photocathode are still n

230 locking during a long time alignment-free, a semiconductor saturable absorber is one of the most suit

231 de passive mode-locked Yb fiber laser with a semiconductor saturable absorber mirror using TS-DFT.

232 promising channel materials, two-dimensional semiconductors show excellent capabilities of scaling di

233 The p-type semiconductor Si(2)Te(3) has a unique layered crystal st

234 of most electronic materials, in particular semiconductors, stretchable electronics are mostly reali

235 In contrast to conventional semiconductors, studies of above-band-gap photoexcitatio

236 2D semiconductors such as monolayer molybdenum disulfide (M

237 ding flexoelectricity(10-13) to conventional semiconductors such as Si, Ge and GaAs.

238 heir impact is well established in elemental semiconductors such as silicon they are not well charact

239 In atomically thin semiconductors, such a capability could probe the moment

240 emerging many-body states in two-dimensional semiconductors, such as exciton condensates(21) and Bose

241 Although three-dimensional semiconductors, such as Si, are common in inorganic mate

242 s mainly been applied to non-centrosymmetric semiconductors, such as wurtzite-structured ZnO and GaN,

243 Hybrid semiconductor-superconductor nanowires have emerged as a

244 ins, bacteria, and gecko feet suspended over semiconductor surfaces to interfaces between graphene an

245 of defects and interfaces in low dimensional semiconductor systems is still elusive.

246 ucture and many-body interactions in tunable semiconductor systems, and the experimental technique ca

247 lity to integrate complex oxides with mature semiconductor technologies.

248 sed on traditional complementary metal-oxide semiconductor technology or memristors have been develop

249 munication bandwidth have pushed the current semiconductor technology to its limit.

250 Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symme

251 Herein, we report a Sb(2)Se(3) semiconductor that satisfies most requirements for an id

252 There is an emerging need for semiconductors that can be processed at near ambient tem

253 ocrystals (NCs) are compositionally-flexible semiconductors that do not contain lead (Pb) or cadmium

254 ing a broad understanding of low-dimensional semiconductors that feature complex organic-inorganic he

255 -halide perovskite (LHP) materials are novel semiconductors that have generated broad interest owing

256 res to large-scale device performances in 2D semiconductors, the study provides insights into the rol

257 evidence and theoretical model of biological semiconductors, the unidirectional electron transport vi

258 a comprehensive comparison with conventional semiconductors, thereby providing a broad understanding

259 perature superconductors and dilute magnetic semiconductors, they are unexplored in topological magne

260 distribution of internal fields, deep inside semiconductor thin films and heterojunctions.

261 The resulting semiconductor thin films possess a direct optical band g

262 harge separation rate is obtained in organic semiconductor thin films.

263 with a transition from a bulk narrow-bandgap semiconductor to a metal at the nanoscale.

264 Tuning a semiconductor to function as a fast proton conductor is

265 d gap metal halide perovskites are promising semiconductors to pair with silicon in tandem solar cell

266 The miniaturization of semiconductor transistors has driven the growth in compu

267 (COFs) are an emerging class of photoactive semiconductors, tunable at a molecular level for high ch

268 flexoelectronics, which is applicable to any semiconductor type, expanding flexoelectricity(10-13) to

269 hip manufactured using the United Monolithic Semiconductor (UMS) PH25 process on a 100 mum thick GaAs

270 Novel semiconductor und molecular photocatalysts focusing on o

271 ne) to tailor the band gap and stabilize the semiconductor under illumination.

272 ength associated with most classical organic semiconductors used in organic photovoltaics (5-20 nm) i

273 tireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithogr

274 orts to form two-dimensional dilute magnetic semiconductors utilized extrinsic doping techniques or b

275 e-lattice induced phenomena in angle-twisted semiconductor van der Waals heterostructures.

276 g (CMP), an essential process to manufacture semiconductor wafers.

277 erstanding of stability criteria for organic semiconductor/water-junction-based devices.

278 olycrystalline HgI(2) and CdTe), none of the semiconductors were able to assuage the requirement for

279 However, unlike conventional semiconductors where energy levels of defects are well d

280 We propose that ring currents in organic semiconductors, which commonly comprise aromatic moietie

281 ntinuous like those in traditional inorganic semiconductors, which offers a unique application of org

282 work proposes a single-atomic-layer organic semiconductor with a wide band gap of 3.41 eV.

283 arkedly improved pressure stability and is a semiconductor with an indirect band gap predicted near 1

284 the first time, bR is proved to be an n-type semiconductor with an indirect electron transition.

285 n of this clathrate yields narrow-gap p-type semiconductor with extraordinarily low thermal conductiv

286 yanoquinodimethane (F(2)-TCNQ) is an organic semiconductor with many promising properties, including

287 l, requires delicate design and synthesis of semiconductors with appropriate bandgaps, suitable energ

288 de perovskites-an emerging family of tunable semiconductors with desirable properties-are attractive

289 eal that the compounds are indirect band gap semiconductors with direct band gaps presenting at sligh

290 The semiconductors with distinct structural/bulk inversion s

291 eous-solution approaches of more metal-oxide semiconductors with exotic phase structures and properti

292 ntally confirmed to be narrow-bandgap p-type semiconductors with high Seebeck thermopower values, up

293 ange of 202-230 muV K(-1) for thermoelectric semiconductors with lattice thermal conductivity of 0.4-

294 The combination of inorganic semiconductors with organic thin films promises new stra

295 anic hybrid halide perovskites are promising semiconductors with tailorable optical and electronic pr

296 atalysis, which integrates photocatalysis on semiconductors with thermocatalysis on supported nonplas

297 ve emerged as a new class of two-dimensional semiconductors with tunable optoelectronic properties, p

298 energy to pre-existing free electrons in the semiconductor, without an equivalent spatiotemporal tran

299 resulting exciton complexes in the monolayer semiconductor WSe(2).

300 changes of excitons in the prototypical vdW semiconductor, WSe(2), prompted by femtosecond light pul