ライフサイエンスコーパス: sic

1 as a positive specific inhalation challenge (SIC).

2 several deep centers in 4H silicon carbide (SiC).

3 gents by specific inhalation challenge test (SIC).

4 n a process called sugar-induced cell death (SICD).

5 , and may be a causative microbial signal in SIC.

6 nihilated at small-angle tilt GBs (STGBs) in SiC.

7 ght and dark charged divacancy defects in 4H-SiC.

8 .01, 6.02, and 11 than those with a negative SIC.

9 deposited MoS2 layer onto epitaxial graphene/SiC.

10 Ci/Gli activity in the nucleus depending on SIC.

11 their institution has discussed or plans an SIC.

12 were assessed at baseline and 24 hours after SIC.

13 4.2 [1.1-16.8]) in subjects with a positive SIC.

14 polytypes of the simplest 1:1 stoichiometry, SiC.

15 in graphene that is epitaxially grown on 4H-SiC.

16 ep mantle isotopic signature, and associated SiC.

17 epsilon(irr,0) is within or at the bottom of SIC.

18 sual beta --> alpha phase transformations in SiC.

19 eared at 1.1 eV below the conduction band of SiC.

20 esign and to develop quantum applications in SiC.

21 in dynamic radiation defect processes in 3C-SiC.

22 phosphate or succinate, protects cells from SICD.

23 lux growth method for the targeted growth of SICs.

24 ive endophthalmitis in patients undergoing M-SICS.

25 ECE and lower complication rates in PECE and SICS.

26 y lower complication rates, both in PECE and SICS.

27 nd lower complication rates in both PECE and SICS.

28 odest improvement in UCVA in PECE but not in SICS.

29 ay be more beneficial than undergoing manual SICS.

30 o graphene grown by thermal decomposition on SiC (000-1).

31 study of nitrogen-doped graphene samples on SiC(000) combining angle-resolved photoelectron spectros

32 h to producing epitaxial twisted graphene on SiC (0001) and the observation of its intrinsic bandgap

33 on of self-assembled Au nanostructures on 4H-SiC (0001) by the systematic variation of annealing temp

34 fter nano-indentation, two-layer graphene on SiC(0001) exhibits a transverse stiffness and hardness c

35 ercalated quasi-free standing graphene on 4H-SiC(0001) grown by chemical vapor deposition.

36 isted hydrogen etching of epitaxial graphene/SiC(0001) in ultrahigh vacuum.

37 chemically activating epitaxial graphene on SiC(0001) using atomic oxygen.

38 Graphene grown on SiC(0001) via the decomposition of the surface has a sin

39 ence patterns in epitaxial graphene grown on SiC(0001).

40 This mutant, sic-3, and the existing sic-1 mutant both exhibit low-amplitude or arrhythmic ex

41 In a genetic screen for enhancers of sic-1, we isolated a loss-of-function Arabidopsis mutant

42 Specialised dental metrics (i.e. SIC, SIC(10) and SCIM(10)) permit the exploration of other im

43 tional tests used were plots of SIC deciles (SIC(10)) and a Scottish Caries Inequality Metric (SCIM(1

44 carbon sites of the active center (Fe(1) (C)SiC(2) ), followed by C-C coupling and hydrogen transfer

45 clic trapezoidal core featuring one internal SiC(2) and two outer M-Si-C three-membered rings, which

46 i geometry is the aromaticity of the central SiC(2) ring having two delocalized pai electrons.

47 metallocene(II) sources Cp'(2)Ti(eta(2)-Me(3)SiC(2)SiMe(3)) (Cp' = eta(5)-cyclopentadienyl, 1a or eta

48 LHY and CCA1 splice variants are needed for sic-3 circadian clock phenotypes.

49 This mutant, sic-3, and the existing sic-1 mutant both exhibit low-am

50 cca1-1 lhy-20 double mutant is epistatic to sic-3, indicating the LHY and CCA1 splice variants are n

51 ing reductions in chipping area: Si (~ 23%), SiC (~ 36%), sapphire (~ 45%), and PSS (~ 33%).

52 ral defect spin states in the 4H polytype of SiC (4H-SiC) can be optically addressed and coherently c

53 ority of the 40 777 private surgeries (21% M-SICS; 79% phacoemulsification).

54 hundred and seventy-eight subjects underwent SIC; 98 had a positive test.

55 the streptolysin O (SLO) cytolysin, but not SIC, a protein that protects S. pyogenes from CAPs.

56 tureless, small incision cataract surgery (M-SICS) accounted for approximately all of the 75 937 cata

57 the importance of climatic water balance on SIC accumulation, we tested the hypothesis that increase

58 we show that the 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect s

59 from cultivation may enhance dissolution of SIC, altering their local stock at decadal timescales.

60 fective defect diffusion length is 10 nm for SiC and 20 nm for Si, and it decreases with increasing c

61 f-plane thermal resistance of graphene -> 2D-SiC and 2D-SiC -> graphene was estimated to be 2.71 x 10

62 dicate that among wide band gap materials 4H-SiC and diamond are two optimal semiconductors due to th

63 omparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the simil

64 chick growth rate were negatively linked to SIC and mercury contamination.

65 s an institutional strength, only 23% had an SIC and most rely on other mechanisms of oversight.

66 that SOC had a significant relationship with SIC and pedogenic carbonate (PIC); converting shrub land

67 together with results of previous studies of SiC and Si, are analyzed with a model of radiation damag

68 o the main synthetic strategies for modified SiC and SiCN ceramics, an overview of the morphologies,

69 ntified N-terminal site (SIN), and that both SIC and SIN are required for optimal inhibition of Ci/Gl

70 Connected with this atmospheric response, SIC and surface albedo decrease with an increase in the

71 We also find that binding of Sufu to SIC and the middle region of Ci can impede recruitment o

72 We analyzed two datasets of SOC and SIC and their (13)C compositions , one with over 100 soi

73 It is also shown how the combination of SICS and FCS can be used to determine the fraction of fl

74 dophthalmitis rate by 3.5-fold (3-fold for M-SICS and nearly 6-fold for phacoemulsification).

75 at IC antibiotics should be considered for M-SICS and phacoemulsification.

76 parameters including sea-ice concentration (SIC) and mercury contamination.

77 nsed observations of sea ice concentrations (SIC) and sea surface temperatures (SST) during the chick

78 ; 23% reported that their institution has an SIC, and 20% said their institution has discussed or pla

79 eparately for both phacoemulsification and M-SICS, and for the eyes complicated by PCR.

80 th lower complication rates in PECE, but not SICS, and there was no significant association with visu

81 Chairs; the existence and characteristics of SICs; and alternative means of oversight of surgical inn

82 ions under their selected-ion chromatograms (SIC) are used for relative quantification of modified pe

83 Salt-inclusion compounds (SICs) are known for their structural diversity and their

84 rigin of defect-induced ferromagnetism using SiC as a prototypical example.

85 dds Ratios and the Significant Caries Index (SIC) as advocated by the World Health Organization were

86 s, manual small-incision cataract surgery (M-SICS), as well as in patients with posterior capsular ru

87 ng force to initiate amorphization in the nc-SiC at higher doses.

88 free path spectra of GaAs, GaN, AlN, and 4H-SiC at temperatures near 80 K, 150 K, 300 K, and 400 K.

89 ering interference correlation spectroscopy (SICS), autocorrelates the signals from the forward-scatt

90 pure B4C (discharge time 2s, current 4A) and SiC:B4C 50 wt% (3s at 6A), which were fully consolidated

91 n or manual small-incision cataract surgery (SICS) based on the LOCS III grading score.

92 The results conveyed here can contribute to SiC-based device fabrication by providing a room-tempera

93 structural stability and fuel integrity for SiC-based materials operated in this regime.

94 ced with NbN-based superconducting qubits or SiC-based spin qubits.

95 A factor strongly limiting SiC-based technologies is the high-temperature synthesis

96 Mathematics and Phy sics-based simulation models have the potential to help

97 Capacitively-transduced SiC BAW disk resonators consistently display gyroscopic

98 RIIb on LSEC, a major scavenger, keeps SIC blood concentrations low and minimizes pathologic de

99 uildup and defect interaction dynamics in 3C-SiC bombarded at 100 degrees C with either continuous or

100 anic phosphate and succinate protect against SICD but by different mechanisms.

101 energy transferred to the electron system of SiC by energetic ions via inelastic ionization can effec

102 yer WS(2) was grown on epitaxial graphene on SiC by sulfurization of WO(3-x) thin films deposited dir

103 iew of the interaction between U(3)Si(2) and SiC by utilizing density functional theory calculations

104 wth of vertically aligned graphene on C-face SiC by varying the processing conditions.

105 , and streptococcal inhibitor of complement (sic) by directly binding to a 45-bp binding site as dete

106 ation of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation.

107 tron spins in high-purity monocrystalline 4H-SiC can be isolated and coherently controlled.

108 onalize the surface and therefore impact how SiC can be used for biomedical applications.

109 ct spin states in the 4H polytype of SiC (4H-SiC) can be optically addressed and coherently controlle

110 ed honeycomb substrates, such as graphene on SiC, can be used to simulate SU(4) symmetric spin-orbita

111 p-gated graphene transistors on a 0.24-cm(2) SiC chip, which is the largest density of graphene devic

112 r is the major site of small immune complex (SIC) clearance.

113 Results show that, for both Si and SiC, collision cascades are mass fractals with fractal d

114 rain to be severely deficient in eliminating SIC compared with the wild-type strain, terminal half-li

115 rofabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at

116 An AlN/3C-SiC composite layer enables the third-order quasi-symmet

117 icide (U(3)Si(2)) fuel with silicon carbide (SiC) composite cladding is being considered as an advanc

118 ne patient demonstrated a sequence change in sic consistent with longer infection duration.

119 -driven ASCT or standard immunochemotherapy (SIC) consolidation in age-adjusted international prognos

120 SIC contents were negatively correlated with estimated g

121 studies are needed to determine whether the SIC could be used to identify subclinical changes in pat

122 Our findings suggest that the SIC could serve as a noninvasive quantitative tool for a

123 structure, the signal intensity coefficient (SIC), could detect tissue-level alterations in HCM sarco

124 n that graphene mono and multilayers grow on SiC crystals at high temperatures in ultrahigh vacuum.

125 d growth methods involving encapsulating the SiC crystals in graphite enclosures, thereby sequesterin

126 graphene is grown on both polar faces of the SiC crystals.

127 [Cp*RuCl](4) catalyzes the addition of iPr(3)SiC=CX (X = H, Cl) across internal alkynes with formatio

128 Additional tests used were plots of SIC deciles (SIC(10)) and a Scottish Caries Inequality M

129 ned less lipid-rich ice-associated prey when SIC decreased.

130 e spent underwater and more time flying when SIC decreased.

131 A detailed study of U(3)Si(2) and SiC defect formation energies of the equilibrated materi

132 Nonetheless, because certain SiC defects have electronic states with sharp optical an

133 The SiC disk resonators are anchored upon an acoustically-en

134 mit is revealed by optical measurements on a SiC disk, with nanoscale smooth sidewalls, exhibiting Q

135 the bulk acoustic wave (BAW) modes of solid SiC disks are mostly free of bulk thermoelastic damping.

136 s study aims to improve our understanding of SIC dynamics and its role in carbon sequestration.

137 The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode pho

138 experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a bu

139 Soil carbonate (SIC) exceeds organic carbon (SOC) greatly in arid lands,

140 ement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resista

141 Silicon carbide (SiC) exhibits excellent material properties attractive f

142 For the 414 657 M-SICS eyes, the endophthalmitis rate was 0.07% (135/192 1

143 matched window function is used to generate SIC for more reliable quantification.

144 he form of small ( 5-10 nm) pockets of alpha-SiC forming in the beta matrix.

145 Tracking decay of SIC from the blood, we found the RIIb knockout strain to

146 d for possible OA in a tertiary center using SICs from 2006 to 2012.

147 omoter yielded a novel allele of the SICKLE (SIC) gene.

148 rmal resistance of graphene -> 2D-SiC and 2D-SiC -> graphene was estimated to be 2.71 x 10(-7) km(2)/

149 Under croplands, the remaining SIC had more modern radiocarbon and a delta(13) C compos

150 The elimination of defects from SiC has facilitated its move to the forefront of the opt

151 n serendipitously and the targeted growth of SICs has met with only moderate success.

152 SICS has two important features: First, for unlabeled NP

153 Silicon carbide (SiC) has unique chemical, physical, and mechanical prope

154 Previous studies of SIC have used a "dead column" packed with the same resin

155 Existing SICs have a median of 7 members; 57% reviewed 3 or fewer

156 Notably, several defects in silicon carbide (SiC) have been suggested as good candidates for explorat

157 Defects in silicon carbide (SiC) have emerged as a favorable platform for optically

158 ation in the R-ACVBP and R-CHOP14 groups was SIC in 26% and 23% of patients and ASCT in 28% and 18% o

159 ns suggest that the vertical distribution of SIC in dry ecosystems is dynamic on decadal timescales,

160 through a C-terminal Sufu-interacting site (SIC) in addition to a previously identified N-terminal s

161 a slowly decaying transient inward current (SIC) in CA1 pyramidal neurons and a transient inward cur

162 ynaptic NMDAR-mediated slow inward currents (SICs) in neighboring neurons, which can increase local n

163 NMDA receptor-mediated slow inward currents (SICs) in pyramidal neurons.

164 er select patients needing an alternative to SIC, including ASCT.

165 Exposure to HMW and LMW agents by SIC induced a differential nasal airway response includi

166 match in spontaneous polarization at the AlN/SiC interface.

167 to remove the last oxygen layer at the oxide/SiC interface.

168 beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25-250 deg

169 d to study defect interaction dynamics in 3C-SiC irradiated at 100 degrees C with ions of different m

170 In addition, because SiC is a binary crystal, homo-nuclear spin pairs are bot

171 the overall crystal structure can be varied; SiC is an example of a material with many polytypes.

172 SiC is considered for applications in advanced nuclear s

173 It is not expected that SIC is directly involved in the circadian clock mechanis

174 The second virial coefficient in SIC is evaluated directly from the measured retention co

175 phene film of one or two monolayers grown on SiC is exfoliated via the stress induced with a Ni film

176 long range order, demonstrating that the nc-SiC is fully amorphilized.

177 Our hypothesis is that SICD is due to a dysregulated Crabtree effect, which is

178 SICS is here demonstrated on unlabeled M13 phages and on

179 Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for hi

180 Sepsis induced cardiac dysfunction (SIC) is a severe complication to sepsis which significan

181 Self-interaction chromatography (SIC) is a well-established method for studying protein-p

182 that HF etching of oxidized silicon carbide (SiC) leads to a very different surface termination, whet

183 The SIC lesions were postequatorial (n = 10), with a mean ba

184 d in the circadian clock mechanism; instead, SIC likely contributes to pre-mRNA metabolism, and the s

185 ge states of both Si and C, the example of a SiC LIP is taken to illustrate the consistency and accur

186 Large SIC losses (194-242 Mg C/ha) also occurred below 4.9 m d

187 w 4.9 m deep under irrigated croplands, with SIC losses lagging behind the downward-advancing wetting

188 solution and leaching may be responsible for SIC losses observed.

189 used mice intravenously with radio-iodinated SIC made of OVA and rabbit IgG anti-OVA.

190 The strain irreversibility cliff (SIC), marking the abrupt change of the intrinsic irrever

191 An ordered hierarchical macro-mesoporous SiC material was synthesized for the first time as a dem

192 Crystalline SiC materials can be obtained by this approach at a temp

193 /C composite nanostructures to corresponding SiC materials without losing their nanostructure morphol

194 oupling microfluidics and mass spectrometry (SIC-MS) now enables the quantification of catalytic prod

195 sic mutant alleles accumulate LATE ELONGATED HYPOCOTYL (

196 sic mutants also lengthen free running period in a manne

197 , and the splice variants that accumulate in sic mutants likely affect the circadian clock response t

198 eld radiative heat transfer between parallel SiC nanobeams in the deep subwavelength regime.

199 eld-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a p

200 fracture toughness of the glass with 30 vol% SiC nanoparticles is significantly higher than any other

201 The addition of SiC nanoparticles shows similar results.

202 eral synthesis method for different kinds of SiC nanostructures, and it can also be readily extended

203 ermal conductivity of GaAs, GaN, AlN, and 4H-SiC near room temperature.

204 We observed that beta-SiC, neutron irradiated to 9 dpa (displacements per atom

205 report a simple method for the production of SiC NWs from inexpensive and abundantly available silica

206 A large-scale and facile production of SiC NWs is critical to its successful application.

207 Silicon carbide nanowires (SiC NWs) have attracted intensive attention in recent ye

208 ical route for the conversion of SiO2/C into SiC NWs, and may also have implications for the electros

209 n easily lead to the formation of homogenous SiC NWs.

210 jects with a suspicion of OA who completed a SIC, of whom 133 showed a positive response.

211 es result in neuronal NMDA receptor-mediated SICs only when appropriately excited.

212 We demonstrate the first SiC optomechanical microresonators that integrate high m

213 is not observed for a single buffer layer on SiC or graphene films thicker than three to five layers.

214 s comparable with that grown on conventional SiC or sapphire substrates.

215 reased the frequency and signaling charge of SICs over an extended period.

216 dge waste consisting of Si, silicon carbide (SiC) particles and metal impurities from the fragments o

217 to repair atomic lattice structures, and to SiC performance prediction as either a functional materi

218 PET2(-)/PET4(-) patients were assigned SIC, PET2(+)/PET4(-) patients were assigned ASCT, and PE

219 The absence of either the U(3)Si(2) or SiC phase, however, causes the defect formation energies

220 suring that epsilon(irr,0) is located at the SIC plateau while RRR >= 150, but also for containing th

221 ic field induced changes in current within a SiC pn junction caused by the interaction of external ma

222 incorporation of recent crop carbon into the SIC pool (p < .0001).

223 ted by the few seconds-long consolidation of SiC powder in an industrial spark plasma sintering devic

224 gned sacrificial dies heat the pre-compacted SiC powder specimens to a critical temperature before ap

225 beta-SiC, preferred for nuclear applications, is metastable a

226 SIC properties did not differ between GAERS and NEC TC n

227 The SICD provides a useful alternative for high-energy (ICD)

228 toluminescence responses of optically-active SiC quantum defects driven by local piezoelectric effect

229 pins associated with divacancy defects in 4H-SiC reaches 1.3 ms, one of the longest Hahn-echo coheren

230 n of individual nuclear spins in diamond and SiC reaches 99% and beyond, it has been limited to 50-65

231 ace increases over the Arctic, enhancing the SIC reduction.

232 inuous interaction between the U(3)Si(2) and SiC, reflects the diminishing driving force for defect f

233 ision cascade density on radiation damage in SiC remain poorly understood.

234 l carbonates (i.e., soil inorganic carbon or SIC) represent more than a quarter of the terrestrial ca

235 Our results pave the path for integrated SiC resonators and resonant gyroscopes with Q-factors be

236 We show that Ge-SiC resonators with nanoscale footprint can support shee

237 rd currents (SOCs) and slow inward currents (SICs), respectively, in thalamocortical (TC) neurons of

238 Sequencing of the virulence gene sic revealed that all outbreak isolates had the same uni

239 Overall, SiC, sapphire and PSS were most affected by chipping, du

240 orces were needed for the higher hardness of SiC, sapphire and PSS.

241 ting to reduce chipping when used to cut Si, SiC, sapphire, and patterned sapphire substrates (PSS).

242 Additionally, the robustness of the SiC semiconductor allows for operation in extreme condit

243 e we present single-cell genomic sequencing (SiC-seq), which uses droplet microfluidics to isolate, f

244 cal inertness, and defect characteristics of SiC, show great potential for applications in metrology,

245 Subjects with a positive SIC showed a significantly higher rate of sIgE reactivit

246 cts without baseline NSBH despite a positive SIC showed a sputum eosinophil count >/=2%, a FeNO level

247 ized nc-SiC and melt-quenched single crystal SiC shows the similar topological features.

248 Specialised dental metrics (i.e. SIC, SIC(10) and SCIM(10)) permit the exploration of oth

249 Using SIC, SST, and bathymetry, we identified separate chick-r

250 100 years after land-use changes, indicating SIC stocks that were stable for millennia can rapidly ad

251 We compared SIC storage to 7.3 m depth in eight sites, each having p

252 gated croplands had 328 and 730 Mg C/ha less SIC storage, respectively, compared to their native vege

253 shows a nonlocal photoresponse even when the SiC substrate is illuminated at distances greater than 5

254 The post-released graphene/SiC substrate is reused for multiple growth and transfer

255 electrode and a piezoelectric GaN film on a SiC substrate.

256 Ds) by growing LED stacks on reused graphene/SiC substrates followed by transfer onto plastic tapes.

257 ture gradient and crystalline quality of the SiC substrates influence their vaporization.

258 re formed on top of AlGaN/GaN transistors on SiC substrates.

259 ffect transistors (GFET) on silicon carbide (SiC) substrates by scanning a focused laser beam across

260 This result paves the way for SiC synthesis on polymers or plastics that cannot withst

261 phingolipid-inclusive CAD risk score, termed SIC, that demarcates patients with CAD independently and

262 eous implantable cardioverter-defibrillator (SICD), the preclinical and clinical data obtained so far

263 tate control for two major spin qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidire

264 Despite a positive SIC, there was no increase in the Feno levels after expo

265 sed that RIIb of LSEC eliminates blood-borne SIC, thereby controlling immune complex-mediated autoimm

266 to induce a significant charge transfer from SiC to WSe2, where a reduction of valence band offset wa

267 nstitutional surgical innovation committees (SICs) to ensure appropriate oversight of surgical innova

268 9) undergo coupling with Cp(2)Zr(eta(2)-Me(3)SiC[triple bond]CSiMe(3))(py) to give dimeric macrocycle

269 esC[triple bond]CPh with Cp(2)Zr(eta(2)-Me(3)SiC[triple bond]CSiMe(3))(pyr) afforded the zirconacyclo

270 rC[triple bond]CMes with Cp(2)Zr(eta(2)-Me(3)SiC[triple bond]CSiMe(3))(pyr) at ambient temperature ga

271 PrC[triple bond]CMes and Cp(2)Zr(eta(2)-Me(3)SiC[triple bond]CSiMe(3))(pyr) the major (and apparently

272 at all outbreak isolates had the same unique sic type.

273 ilicon carbide ultramicroelectrode arrays (a-SiC UMEAs) provide selectivity in the detection of neura

274 ayers grown on the carbon-terminated face of SiC, using the CCS method, were shown to consist of deco

275 conduction at the interfaces in graphene/2D-SiC vdWH and may provide a guideline for efficient desig

276 452 W/m-K for an infinite length graphene/2D-SiC vdWH, which is superior to any graphene based vdWHs

277 thermal conduction phenomena in graphene/2D-SiC vdWHs were studied using reverse non-equilibrium mol

278 lver ions at MeV-level energies on a WSe2/6H-SiC vertical heterostructure studied using XPS and UV-Vi

279 tice distortions (LD) in 4H-silicon carbide (SiC) wafers were quantified using synchrotron X-ray rock

280 Compared with controls, the SIC was 61% higher in overt HCM and 47% higher in subcli

281 and familial relation-adjusted analyses, the SIC was quantitatively different across subjects with ov

282 The SIC was significantly correlated with extracellular volu

283 The occurrence of SICs was accompanied by an appearance of large vesicles

284 idence interval [CI] = 0.04-0.92, P = .039); SICS was associated with a significantly higher risk of

285 The frequency of SICs was positively correlated with [glutamate]o.

286 wing positive specific inhalation challenge (SIC) was restricted to phenotypes of subjects sharing co

287 capacity of liver RIIb to clear blood-borne SIC, we infused mice intravenously with radio-iodinated

288 operties to fully assess the implications of SIC, we introduce an electro-mechanical stability criter

289 ront by ~30 years, suggesting that even deep SIC were affected.

290 osinophil counts assessed at baseline of the SIC were determined.

291 >/=0.35 kUA /l as compared to the result of SICs were 94%, 48%, 86%, and 71%, respectively.

292 The PAR-1 receptor-mediated increased SICs were abolished by several strategies that selective

293 We demonstrate this technique in 4H-SiC, which hosts long-lifetime room temperature vacancy

294 This applies even to SiC, which is a prototypical nuclear ceramic and wide-ba

295 n antisite-vacancy pairs (CAV centers) in 4H-SiC, which serve as single-photon emitters at visible wa

296 II) at their workplaces were collected after SIC with control and specific occupational agents.

297 e compared measurements of echocardiographic SIC with validated assessments of cardiac microstructura

298 by a positive specific inhalation challenge (SIC) with NRL gloves and in 25 symptomatic subjects with

299 showed substantial plasticity in response to SIC, with deeper and longer dives but less time spent un

300 1440 degrees C, began transforming to alpha-SiC, with radiation-induced Frank dislocation loops serv