ライフサイエンスコーパス: silicon

1 te dislocation nucleation with plasticity in silicon.

2 arium strontium titanium oxide ceramics, and silicon.

3 rd scalable qubit devices using nanowires on silicon.

4 re oxide grown by atomic layer deposition on silicon.

5 arrays of interest for quantum simulation in silicon.

6 MD [0.06 (95% CI: 0.01, 0.11) per 100 ng/m3 silicon].

7 A monatomic zerovalent silicon(0) complex ("silylone") stabilized by the chelat

8 rt the isolation and characterization of all-silicon 1,3-cyclobutanediyls as stable closed-shell sing

9 g crystallite model in the case of amorphous silicon(2-4).

10 were measured on two targets, carbon-12 and silicon-28, yielding [Formula: see text], where stat.

11 the past few decades, hydrogenated amorphous silicon (a-Si:H) has been widely utilized as a TFT chann

12 lifetime of a microwave-frequency, nanoscale silicon acoustic cavity incorporating a phononic bandgap

13 mplexes (R(2) Si=M) is demonstrated, whereby silicon activates the incoming substrate and mediates ne

14 icromirror device shining visible light onto silicon acts as the spatial THz modulator.

15 Silicon amendment induces the synergistic defense mechan

16 s of a-Si:H, low-temperature polycrystalline silicon and amorphous oxide semiconductors have partly r

17 We show silicon and calcium concentrations in bedrock are strong

18 Through detailed studies of silicon and copper we discover that the extent to which

19 Cost-efficient commercial available silicon and germanium ATR crystals prepared from double-

20 As elemental main group materials (i.e., silicon and germanium) have dominated the field of moder

21 This work is a leap in silicon anode development and provides insights into the

22 Similar to silicon anodes for lithium-ion batteries, the electroche

23 tic transformations of the heavier homologue silicon are rare.

24 and SU-8 thin films of varying thickness on silicon are utilized as insulated spraying substrates.

25 t experimental chemical vapor depositions of silicon at extreme pressures of ~ 50 MPa (~ 500 atm) hav

26 Here, we report that silicon at small scales may deform plastically with time

27 (3))(2))}{(eta(4)-P(5))FeCp*}], in which the silicon atom binds to the cyclo-P(5) ring, was synthesiz

28 Chiral memory at the silicon atom in these heterocycle-stabilized silyl catio

29 degradation of P(4) mediated by two divalent silicon atoms in a bis(silylene) scaffold, resulting in

30 (2-ABT) was adsorbed onto nanoporous p-type silicon (b-Si) photocathodes decorated with Ag nanoparti

31 e chronic recording performance of L1-coated silicon based laminar neural electrode arrays implanted

32 ising candidate to overcome pulverization of silicon-based anodes.

33 ercome the challenges, we developed a unique silicon-based delivery platform for ocular delivery of s

34 earable sensors today is their dependence on silicon-based electronics, increasing their complexity a

35 Moreover, siRNA complexed with this silicon-based hybrid and applied in vivo topically to mi

36 Here, we report a disposable silicon-based integrated Point-of-Need transducer (TriSi

37 By using existing silicon-based manufacturing methodologies, this room-tem

38 shifting from purely inorganic, organic and silicon-based materials towards hybrid organic-inorganic

39 rsors and intermediates for the synthesis of silicon-based materials.

40 h biosensors with extremely well-established silicon-based microcircuit chips offers a viable route f

41 We construct silicon-based microwire array electrodes and replicate t

42 the design and fabrication of an implantable silicon-based probe that can switch and route multiple o

43 gen)/P(NEMS) ~ 10(4)) and relies on scalable silicon-based process technologies.

44 While conventional silicon-based technology can be used in this context, th

45 In this work, we present a silicon-based, capillary-driven microfluidic chip integr

46 An integrated array of multiple silicon-based, chemical-sensitive field effect transisto

47 important advance towards mass-manufactured, silicon-based, functional robots that are too small to b

48 By integrating these top cells with silicon bottom cells, we achieved a PCE of 27% in two-te

49 In this study, we amorphize crystalline silicon by means of helium-ion irradiation, enabling the

50 gical significance such as the production of silicon by silica electro-deoxidation, the formation of

51 Phosphorus dopants in silicon can be placed with atomic precision to address t

52 Triuranium disilicide (U(3)Si(2)) fuel with silicon carbide (SiC) composite cladding is being consid

53 Lattice distortions (LD) in 4H-silicon carbide (SiC) wafers were quantified using synch

54 ition of the ground-state electron spin of a silicon carbide divacancy defect.

55 measured with an approximately 1,455-kelvin silicon carbide emitter.

56 osmic ray exposure ages of 40 large presolar silicon carbide grains extracted from the Murchison CM2

57 We demonstrate that the amorphous silicon carbide ultramicroelectrode arrays (a-SiC UMEAs)

58 ch as quantum dots and defects in diamond or silicon carbide(6-10), have emerged as promising candida

59 ible interfaces of few-nm thick germanium on silicon carbide.

60 and synthesize hierarchical carbon-nanotube@silicon@carbon microspheres with both high porosity and

61 The composite electrodes of carbon-nanotube@silicon@carbon-graphite with a practical loading (3 mAh

62 ) that are close to those of monocrystalline silicon cells; however, in contrast to silicon PV, perov

63 re selective formation of an enantioenriched silicon center is achieved using prochiral silanes.

64 n both cases a stabilization of the cationic silicon center through an N-Si interaction and formation

65 ce of both anti-van't Hoff/Le Bel carbon and silicon centers next to each other in the isolated compl

66 his strategy to various substrates-including silicon, ceramic, metal and transparent glass-and show t

67 we demonstrate the cointegration on a single silicon chip of the front-end electronics of NMR and ESR

68 h nanoscale roughness fabricated on top of a silicon chip that monolithically integrates 4,096 micros

69 on top of a thin SiO(2) layer deposited on a silicon chip.

70 ar grating-coupled complementary metal-oxide-silicon (CMOS) tunnel diode.

71 Here, we present quasi-two-dimensional (2D) silicon compartments that enable programming of protein

72 Shoot silicon concentrations also increased significantly (26

73 the characteristics of radicals formed from silicon-containing heavy analogues of alkenes is of grea

74 r small and large scale beers, while average silicon content of two groups was similar.

75 onductive Si(110) crystal facets, the silica-silicon conversion becomes reversible at room temperatur

76 Silicon coordinates with all four nitrogen atoms of the

77 Furthermore, most of the silicon crystals in the eutectic region and the aluminum

78 As such, silicon currently dominates the solar energy market and

79 The orientation of the silicon dimers leads to unique optical and electronic pr

80 ent due to an anisotropic orientation of the silicon dimers, which is in excellent agreement with the

81 Silicon dioxide (SiO(2)) having low and tunable refracti

82 nize sIgE to molecular allergens by means of silicon dioxide (SiO(2)) NPs.

83 e prepared on hydrophobically functionalized silicon dioxide substrates via vesicle spreading.

84 Two of the MEMS devices, silicon dioxide surface-micromachined cantilever arrays

85 We introduced elemental silicon during chemical vapor deposition growth of nonla

86 ldhood indicated significant associations of silicon during pregnancy, and zinc during childhood, wit

87 Silicon electrochemistry has the potential to advance su

88 8 muA/muM), which is about 312 folds that of silicon electrode (0.025 muA/muM) and excellent flexibil

89 arbon-free anodes for oxygen production, and silicon electrodeposition from gaseous precursors.

90 ignals commonly observed in voltammograms of silicon electrodes originate from silica-silicon redox c

91 nner and more flexible than typical metal or silicon electrodes, but the arrays described in previous

92 optical interconnects in future large-scale silicon electronic and photonic integrated circuits.

93 This platform heterogeneously integrates silicon electronics and inorganic microlight emitting di

94 on reaction of internal symmetrical alkynes, silicon electrophiles, and primary alkyl zinc iodides.

95 dation, the formation of photoactive layers, silicon electrorefining, and the synthesis of semiconduc

96 fabricated ultra-high vacuum (UHV) cell with silicon etched NEG cavities and alumino-silicate glass (

97 s at the "Bottom": semiconductor physics and silicon-fabrication technology.

98 -concept study on the general suitability of silicon-fluoride-acceptor (SiFA)-conjugated radiopharmac

99 rocess for element cycling, however, related silicon fluxes are unknown.

100 egration capability of large-size devices to silicon for photonic and electronic applications.

101 g to the Lambertian limit for a 10-mum thick silicon for solar absorption over the 300-1,200 nm band.

102 Silicon germanium (SiGe) is a multifunctional material c

103 licon-rich and germanium-rich regions of the silicon germanium alloy.

104 Silicon germanium alloys are technologically important i

105 rized in random semiconductor alloys such as silicon germanium.

106 In a first study, we incorporate a silicon-glass microfabricated ultra-high vacuum (UHV) ce

107 Porous structured silicon has been regarded as a promising candidate to ov

108 For the past half century, silicon has served as the primary material platform for

109 Recent studies of electron spins in silicon have made progress towards a platform that can b

110 ick perovskite top cells with fully textured silicon heterojunction bottom cells.

111 ments in the molten salt electrochemistry of silicon, highlighting subjects of technological signific

112 quired, i.e., for sensing and actuating, and silicon ICs for computation and communication purposes.

113 flexible electronics are not as efficient as silicon ICs for computation and signal communication.

114 While silicon ICs thrive at low-power high-performance computi

115 Combining flexible electronics and silicon ICs yields a very powerful and versatile technol

116 ystem, printed sensors and circuits, thinned silicon ICs, printed antennas, printed energy harvesting

117 tures the rare structural motif of an apical silicon(II) atom with an energetically high lying lone p

118 oscope, we show that a single substitutional silicon impurity in graphene induces a characteristic, l

119 d solidification increased the solubility of silicon in aluminum to approximately 5wt% and induced no

120 But the role of silicon in defense molecular mechanism still remains to

121 es are promising semiconductors to pair with silicon in tandem solar cells to pursue the goal of achi

122 ined transition-metal fragments to stabilize silicon in unprecedented bonding modes, we report herein

123 The as-derived silicon-incorporated perovskite exhibits a 12.8-fold inc

124 ugh the rational design of a model system of silicon-incorporated strontium cobaltite perovskite elec

125 The performance and integration density of silicon integrated circuits (ICs) have progressed at an

126 adblock for conventional monolithic III-V-on-silicon integration technology.

127 conductance across the amorphous/crystalline silicon interface is nearly independent of the length of

128 Bulk silicon is brittle, but it becomes ductile at about 540

129 Understanding deformation mechanisms in silicon is critical for reliable design of miniaturized

130 trient cycling in the lake, derived from the silicon isotope composition of diatoms, which dominate a

131 Here we present three new records of silicon isotopes in diatoms and sponges from the Souther

132 Silicon itself is the second most abundant element in th

133 rge-area, flexible, organic photodiodes with silicon-level performance.

134 The reverse brain-to-silicon link is established through a microelectrode-mem

135 cesses and intermediates in the synthesis of silicon materials.

136 Silicon-mediated fluoride abstraction is demonstrated as

137 xciting electron-hole pairs in a crystalline silicon membrane, we single out the effect of the phonon

138 Here we show that for electrons in silicon metal-oxide-semiconductor quantum dots the hyper

139 ical response of a graphene oxide integrated silicon micro-ring resonator (GOMRR) to a range of vapou

140 chieve this stress by bending single-crystal silicon microbeams using an in situ thermomechanical tes

141 g a monolithic rare-earth-ion-doped laser, a silicon microdisk modulator, and a germanium photodetect

142 r unit activity was measured with 64-channel silicon microelectrode arrays in cortical layers 5/6 of

143 automatic hysteresis plasma switch made from silicon micromachining, and implemented in a two-stage e

144 y higher than that of the uncoated (control) silicon MRR, for the same vapour flow rate.

145 Here, we use silicon multi-electrode arrays to record respiratory loc

146 We developed an approach using silicon multi-electrode arrays to record spontaneous LFP

147 X-ray diffraction, Amorphous silicon, Multi-objective optimization, Monte Carlo metho

148 enge by chemically functionalizing non-toxic silicon nanocrystals with triplet-accepting anthracene l

149 optically active molecules functionalized to silicon nanodisk arrays.

150 s in optical chirality density near resonant silicon nanodisks boost CD.

151 localized electric fields produced within a silicon nanoelectronic device.

152 , we developed transferrin-conjugated porous silicon nanoparticles (Tf@pSiNP) and studied their effec

153 This biocompatible hybrid of porous silicon nanoparticles and lipids has demonstrated an abi

154 In this work, we used silicon nanoparticles as a model material to demonstrate

155 th optical transition and compatibility with silicon nanophotonic circuits.

156 Herein, silicon nanopillar arrays with diameter 35 nm, periodici

157 elasticity and clustering of highly ordered silicon nanopillar arrays.

158 transport behaviours in various crystalline silicon nanostructures, the corresponding characteristic

159 asured thermal conductivity of the amorphous silicon nanowire appears length-independence with length

160 ures and shed new light to design innovative silicon nanowire based devices.

161 ples using a uranyl-binding aptamer-modified silicon nanowire-based field-effect transistor (SiNW-FET

162 region of well-defined length along a single silicon nanowire.

163 d antigen-dissociation detection approach on silicon nanowires-based field-effect transistor arrays,

164 ilm titanium oxide microelectrode connects a silicon neuron to a neuron of the rat hippocampus.

165 We capacitively couple a silicon nitride membrane to an off resonant radio-freque

166 Each switch in the device consists of a silicon nitride waveguide structure that can be rapidly

167 Here, using the nanophotonic silicon-nitride platform, we demonstrate a spatial-multi

168 ecular tagging methods incorporating carbon, silicon, nitrogen, phosphorus, and deuterium into NOM ar

169 II-V photovoltaic (PV) cells grown on Si and silicon-on-insulator (SOI) substrates can be integrated

170 ogy utilizing deep reactive ion etching of a silicon-on-insulator wafer and bonded to a polydimethyls

171 phyrin (Si-TPP), by the deposition of atomic silicon onto a free-base TPP layer on a Ag(100) surface

172 xample, when using common substrates such as Silicon or glass.

173 Here, the use of a laser-induced silicon oxide (LI-SiO(x) ) layer derived from a commerci

174 ng materials based on ruthenium, silver, and silicon oxide are used to obtain stable room-temperature

175 Existing low-kappa materials (such as silicon oxide derivatives, organic compounds and aerogel

176 The micro/nanopattern comprised silicon oxide-coated polyurethane nanopillar arrays on a

177 example - the case of ZnO nanowires grown on silicon oxide.

178 nt study, the effect of rapid cooling on the silicon particle size, distribution, and morphology of h

179 Both alpha-Al dendrites and the silicon particle sizes were significantly reduced from m

180 ons at the bottom of the ring were caused by silicon particles colliding with high angle.

181 The morphology of silicon particles is modified from massive polygonal and

182 the flow characteristics of exhaust gas and silicon particles were analyzed.

183 w model and erosion model of exhaust gas and silicon particles were established based on the gas-soli

184 ly affected wear regions, which is caused by silicon particles with low angle and high velocity.

185 For example, the release of elemental silicon, phosphorus (P(4)), and sulfur (S(8)) from natur

186 ected examples of E-O/E=O compounds with E = silicon, phosphorus, and sulfur in the past few decades

187 gy-intense deoxygenation of oxo compounds of silicon, phosphorus, and sulfur is of particular technol

188 Silicon photodiodes are the foundation of light-detectio

189 todiodes is found to rival that of low-noise silicon photodiodes in all metrics within the visible sp

190 quantum yield approaches that of commercial silicon photodiodes, with a responsivity exceeding 0.25

191 sity of -38.3 mA.cm(-2) using industry-ready silicon photoelectrodes with an impressive methane Farad

192 pled 4-to-1 and 9-to-1 to arrays of 3 x 3 mm silicon photomultiplier pixels.

193 tector modules based on a commercial digital silicon photomultiplier.

194 Silicon photomultipliers (SiPM) are inexpensive, low-foo

195 the state-of-the-art photodetectors such as silicon photomultipliers (SiPM).

196 prototype imaging system presented here uses silicon photomultipliers (SiPMs) in place of PMTs becaus

197 Recently introduced PET systems using silicon photomultipliers with digital readout (dPET) hav

198 within the subwavelength volume of a single, silicon photonic crystal cavity.

199 This work presents the first silicon photonic data link using a monolithic rare-earth

200 Here, we demonstrate the use of silicon photonic microring resonator arrays as a postcol

201 nolithic integration of laser sources on the silicon photonic platform, which is fully compatible wit

202 come the limits of electrical interconnects, silicon photonic technology has been extensively studied

203 Using a label-free, silicon photonic technology, we constructed arrays of Na

204 in lieu of a lens, we demonstrate the use of silicon photonics as a viable platform for computational

205 bility of the well-established and developed silicon photonics technology.

206 , with phase transitions actuated by in situ silicon PIN diode heaters, scalable nonvolatile electric

207 the matrix composition, such as chlorine and silicon, plays a key role in the evaporation of Cu and Z

208 L)(2) ring, which corresponds to the largest silicon-polyphosphorus ring known in a complex.

209 Using silicon probe recordings in awake, head-fixed mice, we s

210 s in pilocarpine-treated epileptic mice with silicon probes during head-fixed virtual navigation.

211 We use high-density silicon probes to measure song-related population activi

212 anowatts) and are completely compatible with silicon processing.

213 e systems containing planar tetracoordinated silicon (ptSi) are barely known.

214 heless, compared to GaAs and monocrystalline silicon PV, perovskite cells have significantly lower fi

215 lline silicon cells; however, in contrast to silicon PV, perovskites are not limited by Auger recombi

216 hreefold the depletion width at the bases of silicon pyramids.

217 Here we show that silicon quantum dots can have sufficient thermal robustn

218 of silicon electrodes originate from silica-silicon redox chemistry.

219 ng flexible and large-area electronics using silicon remains a challenge.

220 fect of small size on ductility and creep of silicon remains elusive.

221 that the dopants will behave differently is silicon-rich and germanium-rich regions of the silicon g

222 Performance of the silicon-rich and inexpensive zeolite, ZSM-5, and its mod

223 The uptake and deposition of silicon (Si) as silica phytoliths is common among land p

224 Several studies have indicated that dietary silicon (Si) is beneficial for bone homeostasis and skel

225 Silicon (Si) is well known for its implication in the al

226 or-semiconductor (EIS) structures as well as silicon (Si) nanowire (NW) field-effect transistors (FET

227 vortex pulse-ablated microcone structures on silicon (Si) substrates.

228 Silicon (Si) uptake and accumulation in plants can mitig

229 zation (ECM) memory(4,5), typically based on silicon (Si), has demonstrated a good analogue switching

230 iron (Fe) alloyed with light elements, e.g., silicon (Si).

231 Like silicon, single crystals of organic semiconductors are p

232 The eutectic silicon size and the interlamellar spacing were reduced

233 nversion efficiency in thin film crystalline silicon solar cell architectures relies essentially on s

234 temperature of a commercial polycrystalline silicon solar cell by 17 degrees C under one sun conditi

235 with industry-relevant textured crystalline silicon solar cells.

236 retrofitted onto already deployed amorphous silicon solar panels to yield an increased daily power g

237 ticularly important in the quantification of silicon species, where sensitivity is limited by the low

238 report on memristive links between brain and silicon spiking neurons that emulate transmission and pl

239 e the rapidly maturing device technology for silicon spin qubits(11-16), experimental progress toward

240 sertion into Si-H bonds for the synthesis of silicon-stereogenic silanes.

241 in comparison with SAWs traveling on AlN on silicon substrate (LoD, 1.04*10(6) CFU/ml).

242 A heavily boron-doped silicon substrate silences the photovoltaic effect induc

243 he MIS structured sensor was fabricated on a silicon substrate using Ag-SnO(2) as sensing material ov

244 of a vanadium dioxide (VO(2)) thin film on a silicon substrate with a gold back reflector.

245 thin the film aligns preferentially with the silicon substrate.

246 EDs were transferred to aluminum tape and to silicon substrates by van der Waals liquid capillary bon

247 in-film carbon nanomaterials on oxide-coated silicon substrates provides a viable pathway for buildin

248 allowed for a much better transfer yield to silicon substrates than unpatterned structures.

249 ve noise from conventionally used conductive silicon substrates, however, has seriously limited both

250 plex DeltaN49 prepared on gold-coated porous silicon substrates.

251 ic carbon materials directly on oxide-coated silicon substrates.

252 (11-22) green LEDs grown on patterned (113) silicon substrates.

253 dth, with 50-150 mV bias) when compared to a silicon-supported (SiS) nanopore (~1.3 nF, and 46-51 pA

254 The acute tip shape of the silicon surface can survive over the laser irradiation p

255 tical methods can be applied to the study of silicon surface reactivity.

256 ected from molecules adsorbed on featureless silicon surfaces.

257 ap tuned to be well suited for perovskite-on-silicon tandem cells, this piperidinium additive enhance

258 olithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made possible by the ideal

259 er conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-

260 onversion efficiency of 25.7% for perovskite-silicon tandem solar cells.

261 We report a monolithic perovskite/silicon tandem with a certified power conversion efficie

262 Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D m

263 tudy of the optical properties of individual silicon telluride (Si(2)Te(3)) nanoplates.

264 e synthesis of a nonmetal porphyrin, namely, silicon tetraphenylporphyrin (Si-TPP), by the deposition

265 and electron-spin-based quantum computers in silicon that operate without the need for oscillating ma

266 electrochemical reduction, they redefine for silicon the potential window free from parasitic signals

267 lenges such as the production of highly pure silicon, the creation of carbon-free anodes for oxygen p

268 In devices integrated on silicon, the interlayer stress provides deterministic co

269 ablished in elemental semiconductors such as silicon they are not well characterized in random semico

270 he novel nitride is formed from an amorphous silicon titanium nitride (SiTiN) precursor under high-pr

271 Here we report on the discovery of a ternary silicon titanium nitride with the general composition (S

272 es drives spin-triplet exciton transfer from silicon to anthracene through a single 15 ns Dexter ener

273 ration of spin-triplet exciton transfer from silicon to molecular triplet acceptors can critically en

274 enriched mesoporous ZSM-5 nanoboxes with low silicon-to-aluminium ratios of ~16.

275 ion of carbene-stabilized disilicon (1) as a silicon-transfer agent.

276 Besides the conventional silicon transistor, two-terminal ovonic threshold switch

277 erior switching performance when compared to silicon-transistor-based systems, miniaturizing size and

278 ificantly increasing the transcript level of silicon transporter genes (EcLsi1, EcLsi2 and EcLsi6) as

279 In the present study, we identified three silicon transporter genes viz.

280 Moreover, these silicon transporters are predicted to be localized in pl

281 d26-like major intrinsic protein), bona fide silicon transporters, whereas EcLsi2 and EcLsi3, an effl

282 tion) in both stem and roots compared to non-silicon treated plants against pink stem borer in finger

283 radical (2(.) ) affords the first dianionic silicon tris(dithiolene) complex (3).

284 prevents the diffusion of cobalt atoms into silicon under very harsh conditions, in contrast to refe

285 te that they might have differences in their silicon uptake ability.

286 EcLsi1, EcLsi2, and EcLsi6 involved in silicon uptake mechanism.

287 valley interference between coupled atoms in silicon using scanning tunneling microscopy.

288 s in diamond, such as the negatively charged silicon vacancy center (SiV), feature spin qubits that a

289 , defect-free array of germanium-vacancy and silicon-vacancy colour centres in an aluminium nitride P

290 hertz (146 megahertz) for germanium-vacancy (silicon-vacancy) emitters, close to the lifetime-limited

291 sorption of nanothin PMMA films on glass and Silicon validates the robust capability of CL AFM-IR in

292 ts (copper, iron, potassium, nickel, sulfur, silicon, vanadium, and zinc) in particulate matter with

293 A high-yield, silicone-on-silicon wafer process is developed to ensure reproducibl

294 pplications, ranging from the fabrication of silicon wafers for microelectronics to the determination

295 onfigurable photonic switches using PCM-clad silicon waveguides and microring resonators are demonstr

296 acity, beta-glucans, pyridoxine, folates and silicon were quantified.

297 Tandem solar cells that pair silicon with a metal halide perovskite are a promising o

298 icles] and higher concentration of elemental silicon with significantly higher MD [0.06 (95% CI: 0.01

299 yields highly realistic models of amorphous silicon, with no or only a few coordination defects (<=1

300 ted through thermal reflow of doped glass on silicon without using advanced lithography.