ライフサイエンスコーパス: silicon carbide

1 s with a CMOS foundry compatible platform in silicon carbide.

2 stalline metal foils and epitaxial growth on silicon carbide.

3 the defect's yield for several polytypes of silicon carbide.

4 bility in epitaxial graphene on silicon-face silicon carbide.

5 kanes using Fe and Ni particles supported on silicon carbide.

6 ctly view and measure stable crack growth in silicon carbide.

7 ible interfaces of few-nm thick germanium on silicon carbide.

8 gs potential similar to or exceeding that of silicon carbide.

9 inated silicon and carbon faces of hexagonal silicon carbide.

10 y more stable than a mixture of SiO2, C, and silicon carbide.

11 nhydride have also been observed on powdered silicon carbide.

12 cate, and demonstrate a Pockels modulator in silicon carbide.

13 for highly mismatched heteroepitaxy of cubic silicon carbide (3C-SiC) compound semiconductor on silic

14 emperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second h

15 rst nitrogen (N)-doped single-crystalline 4H silicon carbide (4H-SiC) electrode for sensing the neuro

16 dynamics experiment with artificial atoms in silicon carbide(6).

17 ch as quantum dots and defects in diamond or silicon carbide(6-10), have emerged as promising candida

18 nt interest in the high-pressure behavior of silicon carbide, a potential major constituent of carbon

19 Silicon carbide and gallium nitride, two leading wide ba

20 graphene thin films deposited on insulating silicon carbide and report the characterization of their

21 and surface reconstruction of single-crystal silicon carbide and study this process by high-resolutio

22 ed) were observed: cubic 3C and hexagonal 2H silicon carbide and their intergrowths.

23 otubes (SWCNTs) and nanorods or particles of silicon carbide and transition metal carbides.

24 f materials such as hexagonal boron nitride, silicon carbide, and others.

25 We used SLG surfaces supported on copper, silicon carbide, and transparent fused silica (SiO(2)) s

26 Point defects in silicon carbide are rapidly becoming a platform of great

27 de graphene nanoribbons epitaxially grown on silicon carbide are single-channel room-temperature ball

28 viously unattributed point defect centers in silicon carbide as a near-stacking fault axial divacancy

29 As a central theme silicon carbide based materials are picked out, but also

30 rred crystallographic class of circumstellar silicon carbide based on astronomical infrared spectra i

31 itaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization.

32 tization with graphite, carbon nanotubes, or silicon carbide can be used to carry out reactions more

33 ion everolimus-eluting DP-DES, or thin-strut silicon-carbide-coated BMS in 8 European centers.

34 ate that the silicon in the derivative forms silicon carbide compounds in the heated cupric oxide rea

35 umstellar outflows and the corresponding low silicon carbide condensation temperatures.

36 well known that when silicon evaporates from silicon carbide crystal surfaces, the carbon-rich surfac

37 orine doping on hydrophobicity of nanoporous silicon carbide-derived carbon (SiCDC), and investigate

38 sure the fracture energy for a bi-crystal of silicon carbide, diffusion bonded with a thin glassy lay

39 ition of the ground-state electron spin of a silicon carbide divacancy defect.

40 e been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material.

41 We also utilized novel silicon carbide electrodes to minimize mechanical disrup

42 measured with an approximately 1,455-kelvin silicon carbide emitter.

43 I(C) = 8.5 mA), using epitaxial graphene on silicon carbide (epigraphene).

44 As a non-centrosymmetric crystal, silicon carbide exhibits the Pockels effect, yet a modul

45 sed FBC used in combination with an uncoated silicon carbide filter and report effects on emissions o

46 transmission electron microscopy of presolar silicon carbide from the Murchison carbonaceous meteorit

47 osmic ray exposure ages of 40 large presolar silicon carbide grains extracted from the Murchison CM2

48 Spin defects in silicon carbide have the advantage of exceptional electr

49 agonal structure, by extracting silicon from silicon carbide in chlorine-containing gases at ambient

50 y the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of

51 metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contami

52 rgely directed towards converting silicon or silicon carbide into other chemicals.

53 ttractive optical and electronic properties, silicon carbide is an emerging platform for integrated p

54 Cradle-to-gate, silicon carbide is estimated to require more than twice

55 s considered in this work, graphene grown on silicon carbide is found to be the most promising substr

56 negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks.

57 Silicon carbide is used as AFM tip material, resulting i

58 w the undulation of ripples on both graphene-silicon carbide junctions.

59 For two coplanar 20-nm-thick silicon carbide membranes separated by a 100-nm vacuum g

60 ich account for 81% of the NFRHT between the silicon carbide membranes.

61 Here we demonstrate high-frequency multimode silicon carbide microdisk resonators and spatial mapping

62 d for measuring the electrical properties of silicon carbide nanoclusters and gallium arsenide nanowi

63 stant drug release was achieved via titanium-silicon carbide nanofluidic implants previously shown to

64 e we show that a dense uniform dispersion of silicon carbide nanoparticles (14 per cent by volume) in

65 High-temperature oxidation of silicon-carbide nanoparticles (nSiC) underlies a wide ra

66 Silicon carbide nanowires (SiC NWs) have attracted inten

67 GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation.

68 ctor (CMOS)-level voltages on a thin film of silicon carbide on insulator.

69 res dissipation limits in 4H monocrystalline silicon carbide-on-insulator (4H-SiCOI) mechanical reson

70 ically made from single-crystalline silicon, silicon carbide or gallium nitride p-n junction photodio

71 lculations of the surface energy of the same silicon carbide plane.

72 ir saturated forms; hexagonal boron nitride; silicon carbide), rare earth, semimetals, transition met

73 simulation of indentation of nanocrystalline silicon carbide reveals unusual deformation mechanisms i

74 PRNN) as a computational approach to predict silicon carbide's (SiC) swelling under irradiation, part

75 ansformation to any depth, so that the whole silicon carbide sample can be converted to carbon.

76 novel 2D/2D vdW heterobilayer consisting of silicon carbide (SiC) and aluminum nitride (AlN) as an e

77 CO(2) photoelectroreduction over a graphene/silicon carbide (SiC) catalyst under simulated solar irr

78 Triuranium disilicide (U(3)Si(2)) fuel with silicon carbide (SiC) composite cladding is being consid

79 Silicon carbide (SiC) exhibits excellent material proper

80 The circumstellar silicon carbide (SiC) grain X57 from the Murchison meteo

81 Presolar silicon carbide (SiC) grains in meteorites are mainly pr

82 Silicon carbide (SiC) has unique chemical, physical, and

83 Notably, several defects in silicon carbide (SiC) have been suggested as good candid

84 Defects in silicon carbide (SiC) have emerged as a favorable platfo

85 Silicon carbide (SiC) is a fascinating wide-band gap sem

86 ilicon monovacancy [Formula: see text] in 4H silicon carbide (SiC) is a spin-active point defect that

87 outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout, a determin

88 esent work shows that HF etching of oxidized silicon carbide (SiC) leads to a very different surface

89 semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS

90 s consumed as sludge waste consisting of Si, silicon carbide (SiC) particles and metal impurities fro

91 ion of ruthenium (Ru) in individual presolar silicon carbide (SiC) stardust grains bears the signatur

92 graphene field-effect transistors (GFET) on silicon carbide (SiC) substrates by scanning a focused l

93 Lattice distortions (LD) in 4H-silicon carbide (SiC) wafers were quantified using synch

94 high-aspect ratio, non-line-of-sight TWVs in silicon carbide (SiC).

95 ubit candidate-the divacancy complex (VV) in silicon carbide (SiC).

96 ond with those of several deep centers in 4H silicon carbide (SiC).

97 ty with measurement of the surface energy of silicon carbide single crystals.

98 Silicon carbide stands out as a material with mature qua

99 ly patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized b

100 rowth of graphene nanoribbons on a templated silicon carbide substrate prepared using scalable photol

101 olayer graphene, monolayer graphene grown on silicon carbide substrate).

102 ngular pillars etched into a semi-insulating silicon carbide substrate.

103 nducting epigraphene (SEG) on single-crystal silicon carbide substrates has a band gap of 0.6 eV and

104 ransfer single crystalline graphene grown on silicon carbide substrates to flexible polycarbonate tra

105 operties of epitaxial graphene (EG) grown on silicon carbide substrates; we demonstrate the availabil

106 se laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation

107 Specifically, the silicon carbide surfaces are hydrophilic with hydroxyl t

108 5.5 times larger than that for two infinite silicon carbide surfaces separated by the same gap, and

109 The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-p

110 it to the study of a promising spin-qubit in silicon carbide, the divacancy (VV).

111 strate how to exploit long-cell polytypes of silicon carbide to achieve strong coupling between trans

112 gas mixture leads to a stable conversion of silicon carbide to diamond-structured carbon with an ave

113 uctured single layer and bilayer graphene on silicon carbide to investigate lateral electronic struct

114 modes near a single stacking fault in cubic silicon carbide, together with substantial changes in th

115 We demonstrate that the amorphous silicon carbide ultramicroelectrode arrays (a-SiC UMEAs)

116 raphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 1

117 , were monolithically integrated on a single silicon carbide wafer.

118 tunneling spectroscopy of graphene grown on silicon carbide, we directly observed the discrete, non-

119 ed containing largely debris of silicon, and silicon carbide, which is a common cutting material on t

120 l vapor deposition (CVD) or via reduction of silicon carbide, which unfortunately relies on the abili

121 rect two-photon absorption (TPA) occuring in silicon carbide with either cubic or wurtzite structure.

122 is work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers.