ライフサイエンスコーパス: silicon nitride

1 t regardless of substrate (e.g., Si, Au, and silicon nitride).

2 ck-etched to span a 800-nm-thick membrane of silicon nitride.

3 magnitude larger than that in stoichiometric silicon nitride.

4 R) plasmons and IR active optical phonons in silicon nitride.

5 he biologically effective characteristics of silicon nitride.

6 The silicon nitride addition is barrierless, forming a long-

7 ion between the LPS on these strains and the silicon nitride AFM tip were measured, and the Alexander

8 study, the wetting properties of silicon and silicon nitride AFM tips are investigated through dynami

9 different microresonator platforms based on silicon nitride and on silicon.

10 sensitivities for sample volumes of 1 nL for silicon nitride and polymer membranes.

11 In the reactions of ethylene with silicon nitride and the cyano radical, the silaisonitril

12 shifters in other platforms such as silicon, silicon-nitride, and silica.

13 We observe that silica-, silicon nitride-, and alumina-supported zirconia on sili

14 ide film of variable thickness on top of the silicon nitride backing.

15 signing analogues of freeform optics using a silicon nitride based metasurface platform for operation

16 Many solid oxides and nitrides, particularly silicon nitride-based materials such as M(2)Si(5)N(8) an

17 ent dual-level grating couplers in different silicon nitride-based photonic platforms.

18 Olympus OMCL-RC800PSA commercial silicon nitride cantilever tips were used.

19 r phase and the matrix grains in an advanced silicon nitride ceramic.

20 mbinant polymers were shown to adsorb to the silicon-nitride chip window from the buffered saline sol

21 ter-scale, MHz free spectral range, low loss silicon nitride coil resonator with the potential to sca

22 d for diamond grown on oxygen plasma treated silicon nitride, demonstrating it to be of the least str

23 ces can be fabricated reliably from a 200-nm silicon nitride device layer using a lithography-based p

24 processes for the fabrication of diamond on silicon nitride devices.

25 ng the chemistry of bimolecular reactions of silicon nitride diatomics in chemical vapor deposition t

26 experimentally by measuring the thickness of silicon nitride film deposited in several increments on

27 ich can generally be applied to an arbitrary silicon nitride film thickness, is based on the simultan

28 trate anomalous dispersion in a 300 nm thick silicon nitride film, suitable for semiconductor manufac

29 A silicon nitride functionalized electrode and a 104 MHz l

30 formance ever reported in the literature for silicon nitride grating couplers without the use of any

31 terobilayer (WSe(2)-MoSe(2)) integrated in a silicon nitride grating resonator.

32 Thin silicon nitride integrated photonics platforms rely on w

33 of silver nanoparticle nucleation at a water-silicon nitride interface showed apparently randomly loc

34 architectures, optimisation of its growth on silicon nitride is essential.

35 Herein, the strain induced by silicon nitride is firstly characterized through the cha

36 y by a magnet, and a nanoscale knife made of silicon nitride is manipulated to contact, bend and scan

37 However, being amorphous, silicon nitride lacks an intrinsic chi((2)), which limit

38 ein microcrystals deposited on an ultra-thin silicon nitride membrane and embedded in a preservation

39 anol molecular species on the surface of the silicon nitride membrane and the ionic species in soluti

40 pical simulated system included a patch of a silicon nitride membrane dividing water solution of pota

41 rticles in aircraft plumes were performed on silicon nitride membrane grids using transmission electr

42 ispersed in water and moving adjacent to the silicon nitride membrane of a commercial LC in a broad r

43 airs of parallel strings cut from a flexible silicon nitride membrane of nanoscale thickness.

44 We capacitively couple a silicon nitride membrane to an off resonant radio-freque

45 5- or 10- microm aperture in a 500-nm thick silicon nitride membrane to localize and limit transmitt

46 etre-diameter pore, sputtered through a thin silicon nitride membrane, can be used to detect the prim

47 t, a double-barrel pipet, and a freestanding silicon nitride membrane.

48 to translocate through a synthetic pore in a silicon nitride membrane.

49 By using nanopores fabricated in 20 nm-thin silicon nitride membranes and highly sensitive electrica

50 for derivatization of nanopores drilled into silicon nitride membranes facilitates control over ion a

51 and electron-beam lithography and tuning of silicon nitride membranes have emerged as three promisin

52 rication process to grow and define circular silicon nitride membranes on glass chips that successful

53 gly, nanophotonic lightsails based on planar silicon nitride membranes patterned with suitable optica

54 rce and a cold drain (both are ~250 nm-thick silicon nitride membranes), which are analogous to the s

55 The substrates, 100-nanometer-thick silicon nitride membranes, allow direct observation of t

56 ynthesized on multiwindow silicon chips with silicon nitride membranes.

57 amplifier with solid-state nanopores in thin silicon nitride membranes.

58 les through synthetic nanopores in ultrathin silicon nitride membranes.

59 lectron beam to sputter atoms in 10-nm-thick silicon nitride membranes.

60 rimental results based on a chip-integrated, silicon nitride, micro-ring resonator.

61 single actin filaments manipulated by novel silicon-nitride microfabricated levers.

62 cell culture is equipped with an array of 16 silicon nitride micropipet-based ion-selective microelec

63 the third-order (chi((3))) nonlinearity in a silicon nitride microresonator, produces output signal a

64 Experimentally, we pump a silicon nitride microring at 1063 nm and 1557 nm to enab

65 tion--to be realized with small air holes in silicon nitride (n = 2.02), and even glass (n = 1.45).

66 These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate

67 We present a platform based on silicon nitride nanomembranes for integrating supercondu

68 Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97%

69 of the ion current through hafnium oxide and silicon nitride nanopores allow the analysis of sub-30 k

70 We use single silicon nitride nanopores to study folded, partially fol

71 Silicon nitride nanoporous membranes with 400 pores in a

72 nt, based on thermomechanical measurement of silicon nitride nanostrings, represents the highest mass

73 ingle-side polished) coated with 1 microm of silicon nitride on both sides are patterned and etched t

74 little loading effect during the etching of silicon nitride on oxide/nitride stack wafer with simila

75 l time using a high-finesse micrometre-scale silicon nitride optical cavity as a sensitive photonic m

76 experimentally demonstrate entrainment of a silicon-nitride optomechanical oscillator driven up to t

77 rt an optically transparent carbon electrode-silicon nitride (OTCE-SiN(x)) window platform fabricated

78 The silicon nitride photonic circuit transforms fiber-couple

79 on source with a wafer-scale, ultra-low loss silicon nitride photonic circuit.

80 ic integration of piezoelectric actuators on silicon nitride photonic circuits.

81 ble process comprising III-V semiconductors, silicon nitride photonic integrated circuits, and 130-nm

82 lestone towards a fully integrated low-noise silicon nitride photonics platform.

83 Mach-Zehnder interferometer (MZI) based on a silicon nitride platform combined with a microfluidic sy

84 tegration of this phase change material in a silicon nitride platform using a microring resonator tha

85 ncy exceeding - 0.45 dB for the 400 nm thick silicon nitride platform) with relaxed fabrication toler

86 ator realized in the CMOS foundry-compatible silicon nitride platform.

87 Here, using the nanophotonic silicon-nitride platform, we demonstrate a spatial-multi

88 tions were carried out considering different silicon nitride platforms with 150, 300, 400 and 500 nm

89 Unlike silicon nitride pores, a counteracting contribution from

90 We have fully characterized silicon nitride probe tips and other experimental parame

91 The gas-phase reaction between the silicon nitride radical (SiN) and the prototypical olefi

92 r the first time through the reaction of the silicon nitride radical (SiN) with acetylene (C(2)H(2))

93 We find that the silicon nitride radical bonds by the nitrogen atom to th

94 ere able to study the notoriously refractory silicon nitride radical in reaction with ethylene under

95 Whereas the silicon nitride radical was found to pass an entrance ba

96 chnology based on piezoelectrically actuated silicon nitride resonant waveguide gratings fabricated o

97 ted dispersion, and resonance linewidths for silicon nitride resonators excited with lasers operating

98 ign a two-dimensional lattice of 261 coupled silicon nitride ring resonators that supports nested mod

99 A silicon nitride (Si(3)N(4) reaction surface also resulte

100 Silicon nitride (Si(3)N(4)) is a non-oxide ceramic compo

101 Mesoporous silicon nitride (Si(3)N(4)) is a nontraditional support

102 nsing layer to minimise post-processing, and Silicon Nitride (Si(3)N(4)) is the most common material

103 P/Si) semiconductor lasers and ultralow-loss silicon nitride (Si(3)N(4)) microresonators on a monolit

104 le SARS-CoV-2 testing was demonstrated using silicon nitride (Si(3)N(4)) nanoslot fluidic waveguides

105 between pathogenic L. monocytogenes EGDe and silicon nitride (Si(3)N(4)) were measured using atomic f

106 ol, nuclear targets are created using PAD on silicon nitride (Si(3)N(4)) windows with silicon frames.

107 calable and controllable method to fabricate silicon nitride (Si(x)N(y)) membranes with effective thi

108 Silicon nitride (Si3N4) ceramics are used in numerous ap

109 irst time that an optimized biomedical grade silicon nitride (Si3N4) demonstrated cell adhesion and i

110 nt types of surface, silicon dioxide (SiO2), silicon nitride (Si3N4), and titanium oxynitride (TiON)

111 ce chemistry of a relatively new bioceramic, silicon nitride (Si3N4).

112 ure was fabricated with silicon oxide (SiO2)/silicon nitride (Si3N4)/silicon oxide on a p-type silico

113 Significant advances in visible light silicon nitride/silica all-waveguide resonators are achi

114 near-field radiation between silica-silica, silicon nitride-silicon nitride and gold-gold surfaces t

115 ngsten, silicon, germanium, silicon dioxide, silicon nitride, silk and synthetic polymers) used in th

116 The closed-cell microchips based on silicon nitride (SiN(x)) are widely used as "nanoscale r

117 Precise and selective removal of silicon nitride (SiN(x)) over silicon oxide (SiO(y)) in

118 or of cytochrome c (cyt c) through ultrathin silicon nitride (SiN(x)) solid-state nanopores of diamet

119 Silicon nitride (SiN(x)) thin films play a crucial role

120 abricated on mid-IR transparent silicon-rich silicon nitride (SiN(x)) thin films through complementar

121 Silicon nitride (SiN) and the cyano radical (CN) are iso

122 the integration of a WSe(2) monolayer onto a Silicon Nitride (SiN) chip.

123 -timescale lattice of commercially available silicon nitride (SiN) coupled ring resonators for harmon

124 f room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide sub

125 on a silicon dioxide (SiO2)/Si substrate, a silicon nitride (SiN) membrane, and a suspended architec

126 Here, we report silicon nitride (SiN) membranes with fully controlled po

127 es fabricated by focused ion beam milling of silicon nitride (SiN) membranes, enabling the reproducib

128 ricated by focused ion beam (FIB) milling of silicon nitride (SiN) membranes, with 100 pores in a hex

129 xed label-free lab-on-a-chip biosensor using silicon nitride (SiN) microring resonators.

130 This is achieved through the reaction of the silicon nitride (SiN) radical with 1,3-butadiene (C(4)H(

131 om, i.e. shifting from the cyano (CN) to the silicon nitride (SiN) radical, has a dramatic influence

132 an optical isolator based on a pass-through silicon nitride (SiN) ring resonator integrating the opt

133 ng across a bonded interface consisting of a silicon nitride (SiN) waveguide and a beta barium borate

134 upling of a [Formula: see text] thick N-rich silicon nitride (SiN) waveguide with a [Formula: see tex

135 Mid-infrared (mid-IR) sensors consisting of silicon nitride (SiN) waveguides were designed and teste

136 Silicon nitride (SiN) waveguides with ultra-low optical

137 structure - cyano (CN), boron monoxide (BO), silicon nitride (SiN), and ethynyl (C2H), and their reac

138 Silicon nitride (SiNx) based biosensors have the potenti

139 e first time how an atomically thin (0.4 nm) silicon nitride (SiNx) interlayer helps in maintaining/i

140 to surface stresses and thus is embedded in silicon nitride so as to avoid direct contact with the s

141 tudy particle translocation dynamics through silicon nitride solid-state nanopores.

142 The waveguide cross-section of the silicon nitride spiral resonator is designed to possess

143 ers are co-self-injection locked to a single silicon nitride spiral resonator to provide a record-hig

144 Silicon nitride stress capping layer is an industry prov

145 ect transistor (FET) through deposition of a silicon nitride stress liner that warps both the gate an

146 ical deformation of up to 20 nanometres in a silicon nitride structure, using three milliwatts of con

147 copy to detect the remote Joule heating of a silicon nitride substrate by a single multiwalled carbon

148 ovide control over the surface charge of the silicon nitride substrate through modification of the su

149 sion from graphene plasmonic resonators on a silicon nitride substrate.

150 damage marker 3-nitrotyrosine (BSA-3NT) on a silicon nitride substrate.

151 es between the metallic/oxide phases and the silicon nitride support, alongside the redox reactions o

152 at were present when a bond formed between a silicon nitride surface (atomic force microscopy tip) an

153 spectroscopy (XPS) were used to analyse the silicon nitride surface following each treatment.

154 A native silicon nitride surface was treated with concentrated hy

155 S-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation.

156 Exposing silicon nitride to an oxygen plasma offered optimal surf

157 Nano-strip was used to oxidize silicon nitride to form a hydrophilic layer.

158 nocrystalline diamond thin films on modified silicon nitride, under CVD conditions, produced coalesce

159 Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techn

160 We apply that theory to a silicon nitride waveguide interrupted by a gap filled wi

161 Each switch in the device consists of a silicon nitride waveguide structure that can be rapidly

162 Rabbit IgG was immobilized onto a silicon nitride waveguide.

163 compact light delivery system, consisting of silicon nitride waveguides and grating couplers for out-

164 ics by directly uniting III-V materials with silicon nitride waveguides on Si wafers.

165 ation of III-V gain medium and ultralow-loss silicon nitride waveguides with optical loss around 0.5

166 at microwave line rates(3-5), ultralow-loss silicon nitride waveguides(6,7), and high-speed on-chip

167 elecom to visible bands using ultra-low-loss silicon nitride waveguides.

168 Nano-DCPA and nano-silica-fused silicon nitride whiskers at a 1:1 ratio were used at fil

169 Silicon nitride whiskers, with an average diameter of 0.

170 The PAD solution is then spun onto the silicon nitride window and annealed to create a thin, un

171 The silicon nitride windows allow multimodal analysis of the

172 were deposited in microliter volumes on thin silicon nitride windows and dried.

173 solates the sample from the vacuum with thin silicon nitride windows.

174 are patterned and etched to create 1-microm silicon nitride windows.

175 The use of Si-rich silicon nitride with a refractive index in the range 2.7

176 as thin-film (i.e., thickness below 300 nm) silicon nitride with normal GVD.