コーパス検索結果 (1語後でソート)
通し番号をクリックするとPubMedの該当ページを表示します
1 s for a 20 um diameter capacitor in a 100-nm-thick film).
2 ontrast to three-dimensional precipitates in thick films).
3 threshold swing of 108 mV dec(-1) on an 8-nm-thick film.
4 he robust ferroelectricity for the sub-10 nm thick film.
5 ts as large as 35 muC cm(-2) across a 150 nm thick film.
6 coercive field of 30 mT at 5 K for a 125-nm-thick film.
7 to approximately 1.5 for the thinnest 9.5-nm-thick film.
8 h optical transmission through the optically thick film.
9 ace via one of its -NC groups to form a 2-nm-thick film.
10 th the highest activity observed for ~200 nm thick films.
11 f near-interface relaxation and diffusion in thick films.
12 ms spanning the full range from ultrathin to thick films.
13 itical role of the ignored lattice strain in thick films.
14 h is otherwise difficult to characterize for thick films.
15 employed to fabricate crack-free P(VDF-TrFE) thick films.
16 ed processing by spin-coating into nanometer-thick films.
17 nhanced electronic effects not realizable in thick films.
18 tated long-distance charge transport through thick films.
19 phase La2Ni2O5 (Ni(2+)) for a few unit-cell thick films.
20 rpotential of approximately 550 mV for 10 nm thick films.
21 beneficial for the multilayer deposition of thick films.
22 ty is observed at lower temperatures than in thick films.
23 itch the polarization of approximately 10 nm thick films.
24 g the conductivity of over 0.1 S cm(-1) in a thick film after exposure to air for one week, to the be
25 10(-6) M for Fe3+ were obtained with 300 nm thick films after 30 min of exposure to a quiescent samp
27 , but with improved PLQY of 36%, for a 60 nm thick film, among the highest reported for lead-free low
28 s are detected at the downstream gold-coated thick-film amperometric detector at different migration
32 tensile strength up to ~570 MPa for a 940 nm thick film and electrical conductivity of ~15 100 S cm(-
33 to the air/subphase interface to form a 20 A thick film and showed a critical micelle concentration o
34 tural probes that are sensitive to nanometer-thick films and also capable of in-operando conditions w
35 new avenue for strain control in relatively thick films and also promises new forms of ordered nanos
36 poly(methyl methacrylate) sheets, zinc oxide thick films, and gold thin films are determined as examp
37 luster nuclearity is greater in a relatively thick film ( approximately 40-50 nmol Co ions/cm(2)) dep
38 In this phase, 4n - 2 AL (n = 1, 2, 3...) thick films are found to possess finite in-plane polariz
39 ripples are intrinsic features of nanometer-thick films, atomically thin materials, and cell membran
41 an be formed on BP, and that these monolayer-thick films can passivate the BP surface and inhibit oxi
42 ilibration mechanism previously advanced for thick films can successfully describe PVD glass structur
46 nsport in thin films to "lossy" transport in thick films confirms that electron hopping is involved i
47 gy windows which can successfully sinter the thick film copper print preventing detrimental copper ox
49 ed to produce uniform, crack-free micrometer-thick films, CulnSe2 nanocrystals were tested in prototy
51 his signal is only experimentally obvious in thick films due to the different scaling of electroabsor
54 ti-HSA was immobilized onto the surface of a thick-film electrode, followed by a competition between
57 order using a simple linear superposition of thick-film exponential barrier gradients, including a re
58 MO(2) (M = Co, Mn, Ni, Fe), in both thin and thick film form, compounds which are conventionally synt
59 is is, to our knowledge, the first report of thick film formation in Li-O(2) cells, overcoming the 74
62 tures, specifically bicontinuous gyroids, in thick films (>100 um) derived from block copolymers is r
63 t the distance from the films' surface shows thick films have surface and film-center transitions, wh
64 length of 500 nm, for example, 13- and 79-nm-thick films have transparencies of 47 and 10% and sheet
65 rization (space group Pmn2(1) ), while 4n AL thick films have zero total polarization (space group Pn
66 eter) interconnected in a mesoporous, 10 mum thick film immersed in Li(+)-containing CH(3)CN electrol
70 ol; (iii) yields a 45-s response time (2-mum-thick film); (iv) is completely reversible (6% relative
71 zed by amalgamating several state-of-the-art thick film, laser printing, solid-state potentiometry, f
72 widely used as an adhesion layer in organic thick film metallization as well as a top metal contact
73 blood samples before and after treatment for thick film microscopy, infectivity assessments by mosqui
75 efined as presence of asexual parasites on a thick film of blood and was treated with sulfadoxine/pyr
77 Antibodies were immobilized onto a 10-nm-thick film of gold which had been previously deposited o
78 e-immobilized receptor across the micrometer-thick film of liquid crystal is fast (on the order of se
80 nsional hydrogenic levels above a micrometer-thick film of liquid helium, is proposed as an easily ma
81 g, 0.25-mm-i.d. capillary using a 0.5-microm-thick film of nonpolar dimethyl polysiloxane coupled in
82 is brought into contact with an 80-nanometer-thick film of poly(methylmethacrylate) supported on n-do
85 nd PbI(2) in gamma-butyrolactone on a 400 nm thick film of TiO(2) (anatase) nanosheets exposing (001)
87 on of vapor-deposited polycrystalline 188 nm thick films of 1 results in a 140 +/- 20% yield of tripl
88 The orientation and dynamics of two 40-nm thick films of 4-n-pentyl-4'-cyanobiphenyl (5CB), a nema
89 increase the Curie temperature of micrometre-thick films of BaTiO(3) to at least 330 degrees C, and t
90 zation of a photodetector based on optically-thick films of dense, aligned, and macroscopically long
93 ture of magnetic anisotropy in 2.5-16 micron thick films of nickel ferrite (NFO) grown by liquid phas
94 (OER) electrocatalytic properties of ~2-3 nm thick films of NiO(x), CoO(x), Ni(y)Co(1-y)O(x), Ni(0.9)
95 ectricity in strain-free epitaxial nanometer-thick films of otherwise nonferroelectric strontium tita
96 The glass sample stick is composed of 20-nm-thick films of permalloy that have square or rectangular
98 images of a substrate immersed in 70-microL-thick films of solution were obtained in the generator-c
99 s in the orientations of 1- to 20-micrometer-thick films of supported LCs, thus corresponding to a re
100 olve the thin film structure for 2 and 20 nm thick films of tetraceno[2,3-b]thiophene and detect only
102 or of the domain walls in the sub-micrometer thick films of the technologically important ferroelectr
103 ion of conductive nanoparticles in a polymer thick film on an organic substrate (PTFOS) that induces
104 nsors were fabricated by deposition of 50 nm thick films on interdigitated gold electrodes via organi
107 iencies up to 10.8%, fill factors up to 77%) thick-film polymer solar cells for multiple polymer:full
108 njugated polymer leading to high-performance thick-film polymer solar cells with a V(OC) of 0.88 V an
110 y to acquire IR spectral data from nanometer-thick films retained upon forced dewetting of a solid su
111 xed nano copper and mixed nano/ micro copper thick film screen printed structures on FTO coated glass
116 I shielding performance (~50 dB for a 940 nm thick film) that exceeds other synthetic materials with
118 NEXAFS spectra and AFM images of the ~1.5 nm thick films, the diradical molecules form islands on the
120 and ability to form deposits that range from thick films to submonolayer coatings, derive from the re
121 ptable to molecular catalysts immobilized in thick films, underscores the importance of optimizing ma
122 applied magnetic fields were achieved in the thick films via incorporation of a periodic array of ext
123 onductivity of ~15 100 S cm(-1) for a 214 nm thick film, which are both the highest values compared t
124 pure Mg anode produced a porous 0.6-4.1 mum thick film, while the AZ31 Mg alloy produced a more comp
125 be further employed to fabricate micrometer-thick films with bifunctional luminescent and superhydro
126 and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer laye
127 nufacturing process, we engineered nanometer-thick films with precisely controlled frozen random ripp
129 ge of around 0.5 volts across a 7-micrometre-thick film, with a current density of around 17 microamp