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1 nductive inorganic materials (such as indium tin oxide).
2 sordered monolayers consisting of alkyls and tin oxide.
3 ast a similar workfunction to that of Indium Tin Oxide.
4 ismuth telluride thin films, grown on indium tin oxide.
5 comparable to those fabricated using indium tin oxide.
6 d on chips coated with either gold or indium-tin oxide.
7 d yield become close to devices using indium tin oxide.
8 rresponding parameters for commercial indium-tin oxide.
9 ulses on a subwavelength thin film of indium tin oxide.
10 ce > 70%) that are rivalling those of indium-tin oxide.
11 velop an amorphous two-dimensional (2D) iron tin oxide (A-FeSnO(x)) nanosheet with hierarchical vacan
13 ate dielectric with an amorphous zinc-indium-tin oxide (a-ZITO) transparent oxide semiconductor (TOS)
14 oating to sequentially deposit thin films of tin oxide, a triple-cation perovskite and spiro-OMeTAD,
15 z, and to conductor supports, such as indium tin oxide, aluminum, highly ordered pyrolytic graphite,
18 ng P3HT and even inorganic materials, indium tin oxide and gold, showed similar electrical potential
19 omposite thin film sandwiched between indium tin oxide and indium-gallium eutectic alloy exhibit a lo
20 that are most frequently comprised of indium tin oxide and show further advantages of flexibility and
21 ent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role as elec
22 by drop-casting 1a in DCM on fluorine-doped tin oxide, and the ECL of the 1a film was found in phosp
24 0) cm(-2) at the interface between an indium tin oxide anode and the common small molecule organic se
25 n other transparent materials such as indium tin oxide ( approximately 80%) and ultrathin metals ( ap
26 ized cerium oxide nanoparticle coated indium tin oxide as a working electrode to observe the enhanced
28 ade from graphene (at the bottom) and indium tin oxide (at the top) for dielectrophoretic cell trappi
29 ilized the metal particles on antimony-doped tin oxide (ATO) in sustained lower Ir oxidation states (
32 of naphthalenediimides were grown on indium tin oxide by ring-opening disulfide-exchange polymerizat
34 mit of transparent conductors such as indium tin oxide, carbon-nanotube films, and doped graphene mat
36 ical cell comprising an fcc3-modified indium tin oxide cathode linked to a cobalt phosphate-modified
38 = 8 to 50 nm) to amine-functionalized indium-tin oxide coated glass electrodes (Glass/ITO), obtaining
40 electrophoretically deposited on the indium tin oxide coated glass substrate at a low DC potential.T
43 n external potential to a transparent indium tin oxide-coated electrode (the substrate), which enable
44 sting of a platinum catalyst layer on indium-tin oxide-coated glass by the application of two differe
45 citrate-stabilized (cit) Au NPs using indium tin oxide-coated glass electrodes (glass/ITO) by (1) ele
46 er Au nanoparticles (NPs) attached to indium tin oxide-coated glass electrodes in Br(-) and Cl(-) sol
48 rovskite photocathodes deposited onto indium tin oxide-coated polyethylene terephthalate achieved an
50 two electrodes and were fabricated on indium tin oxide-coated substrates (e.g., polyester) simply by
51 solar cells grown directly on fluorine-doped tin oxide-coated substrates without using any hole-block
52 tabilized Au nanoparticles (NPs) onto indium-tin-oxide-coated glass (glass/ITO) electrodes as studied
53 ached to indium-tin-oxide- or fluorine-doped-tin-oxide-coated glass electrodes (glass/ITO or glass/FT
54 tal oxide film--indium tin oxide or antimony tin oxide--coated with a thin outer shell of TiO2 formed
56 d that the increased conductivity allows the tin oxide conversion and alloying reactions to both be r
59 -aminopropyl-triethoxysilane modified indium tin oxide electrode (ITO/APTES/GO/HSA) has been develope
60 Here, we show that an inverse opal-indium tin oxide electrode hosts a large population of current-
61 he oxidative polarization of an inert indium tin oxide electrode in phosphate-buffered water containi
64 tailor-made hierarchically structured indium-tin oxide electrode that gives rise to the excellent int
66 stituted polythiophene polymer coated indium tin oxide electrode was used for the determination of IL
71 ectrodeposition protocol on activated indium-tin oxide electrodes (ITO), producing conformal films th
72 tion QS, as probed on 3D-inverse opal indium tin oxide electrodes at 8.5 sun irradiance (lambda > 450
74 rast, P450 BM3 adsorbed on unmodified indium tin oxide electrodes revealed 36% activity by electrode
77 ese PCR fragments were immobilized to indium tin oxide electrodes, and oxidation of guanine in the fr
78 coated films of lipids on transparent indium tin oxide electrodes, we formed two-dimensional networks
79 matic assemblies on transparent indium-doped tin oxide electrodes, which are of interest in organic e
81 shown to be diminished by the formation of a tin oxide film on the surface of the mercury-rich gamma
82 e composed of a gold electrode and an indium tin oxide film with micrometer separation with a double-
83 he conducted experiments with a 10 nm indium tin oxide film, having plasmonic resonance in the 1500 n
84 been explained by the formation of a barrier tin oxide film, which dissolved only at the lowest pH.
88 graphene is much higher than that of indium tin oxide films, especially at large incident angles.
89 sembled on a polyethylene naphthalate-indium tin oxide flexible substrate with a PCE of 3.12% is demo
91 layer for CEA consisted of a Fluorine-doped Tin Oxide (FTO) conductive glass substrate - connected t
93 tion of pyrene pyrrole onto a fluorine-doped tin oxide (FTO) electrode allowed the targeted orientati
94 tic water oxidation occurs at fluoride-doped tin oxide (FTO) electrodes that have been surface-modifi
97 alladium (ZnO/Pt-Pd) modified fluorine doped tin oxide (FTO) glass plate was fabricated for detection
98 cessfully electrodeposited on fluorine-doped tin oxide (FTO) substrate using [BMIM][Ac] ionic liquid
103 Illumination of the resulting fluorine-doped tin oxide (FTO)|SnO2/TiO2|-[Ru(a) (II)-Ru(b) (II)-OH2](4
104 rys zeo were deposited on the Fluorine doped tin oxide glass electrode (FTO) by drop-casting method f
105 g formate dehydrogenase, on a fluorine-doped tin oxide glass electrode modified with Cp*Rh(2,2'-bipyr
107 electrophoretically deposited onto an indium-tin-oxide glass substrate and used for immobilization of
109 ifferent conductive surfaces, such as indium tin oxide, gold film, and stainless steel electrodes.
110 material on various surfaces (glass, indium tin oxide, gold) was evaluated with the tape peel-off me
113 ance comparable to that of commercial indium tin oxide in the visible spectrum, but far superior tran
114 izing anti-E. coli antibodies onto an indium-tin oxide interdigitated array (IDA) microelectrode.
116 erest as an anode material to replace indium tin oxide, is calculated to be a two-dimensional-like me
117 ectric nanowires, made of silicon and indium tin oxide, is reversibly structurally deformed under the
119 fabricated from these complexes using indium tin oxide (ITO) and gold contacts appears to be dominate
120 nductive oxides includes the material indium tin oxide (ITO) and has become a widely used material of
121 ganic solar cells is proposed without indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene):pol
122 ted by a self-alignment of conducting Indium Tin Oxide (ITO) and rGO layer without etching of the rGO
123 iency solar cells, on semitransparent indium tin oxide (ITO) and titanium dioxide (TiO2) electrodes.
127 y, slides coated with a thin layer of indium tin oxide (ITO) are the standard substrate for protein i
131 optical transparency by incorporating Indium Tin Oxide (ITO) as the conductive element in each unit c
132 d enzyme coated NPs were deposited on indium tin oxide (ITO) coated flexible polyethylene terephthala
133 s) deposited electrophoretically onto indium tin oxide (ITO) coated glass electrode and have been uti
135 of NiO nanoparticles deposited on an indium tin oxide (ITO) coated glass substrate serves as an effi
139 nsparent conductive electrode film of indium tin oxide (ITO) coated on the interface of total interna
140 e (GOx) was immobilized on a modified indium tin oxide (ITO) coated polyethylene terephthalate (PET)
142 ode show superior efficiency to their indium tin oxide (ITO) counterparts because of improved photon
144 an optically transparent thin film of indium-tin oxide (ITO) covering the exterior is described.
145 rstand thin film delamination from an indium tin oxide (ITO) current collector under cyclic load.
146 hick) were formed on quartz glass and indium tin oxide (ITO) directly from Nafion-[Ru(bpy)3]2+ Langmu
147 occus elongatus , on a nanostructured indium tin oxide (ITO) electrode and to covalently immobilize P
148 and use of a thin metal film modified Indium Tin Oxide (ITO) electrode as a highly conductive, transp
149 The distribution of current across an indium tin oxide (ITO) electrode can be altered by varying the
151 gold nanoparticle (AuNP) arrays on an indium tin oxide (ITO) electrode using efficient and low-cost m
155 of PVDF nanowires-PDMS composite film/indium tin oxide (ITO) electrode/polarized PVDF film/ITO electr
156 this paper we describe fabrication of indium-tin oxide (ITO) electrodes and the design of a ligand th
157 ensitized photocathodes on NiO-coated indium tin oxide (ITO) electrodes and their H2-generating abili
158 was studied at glassy carbon (GC) and indium-tin oxide (ITO) electrodes modified by gold nanoparticle
160 icrochip device that uses transparent indium tin oxide (ITO) electrodes to measure quantal exocytosis
161 -selected Pt(n) clusters deposited on indium-tin oxide (ITO) electrodes was used to examine the effec
162 consists of nanostructured silver and indium tin oxide (ITO) electrodes which are separated by 5 nm t
167 ssy Mode Resonances generated by thin indium tin oxide (ITO) films fabricated onto the planar region
170 a plano-convex PVC gel micro-lens on Indium Tin Oxide (ITO) glass, confined with an annular electrod
171 ly(aniline) (PANI) films deposited on indium-tin oxide (ITO) have been investigated using electrochem
177 modifications on the protecting indium-doped tin oxide (ITO) layer are shown to initiate irreversible
178 e and limited resources of indium for indium tin oxide (ITO) materials currently applied in most of t
181 lcohol (MBA) to its aldehyde (MBAld), indium tin oxide (ITO) nanoparticles as electron conduit and bi
184 t stripping of lead and cadmium on an indium tin oxide (ITO) optically transparent electrode (OTE) we
185 enuated total reflectance at an indium-doped tin oxide (ITO) optically transparent electrode coated w
186 ymer (MIP-FU) films were deposited on indium-tin oxide (ITO) or Au film-coated glass slides, Pt disk
187 label-free biosensing device based on indium tin oxide (ITO) overlaid section of a multimode optical
191 and disposable immunosensor based on indium-tin oxide (ITO) sheets modified with gold nanoparticles
192 ide (Fe3O4) nanodots fabricated on an indium tin oxide (ITO) substrate via a block copolymer template
193 yt c photo-cross-linked onto an indium-doped tin oxide (ITO) substrate was 8.4 +/- 0.2 s-1, on the sa
194 lightmode spectroscopy (OWLS) and an indium tin oxide (ITO) substrate, we show that asymptotic kinet
196 e thin films fabricated on silica and Indium Tin Oxide (ITO) substrates using femtosecond pulsed lase
197 njugated organic semiconductor on the indium tin oxide (ITO) surface followed by doping with a strong
198 hrome c directly immobilized onto the indium tin oxide (ITO) surface, we measured a reaction rate con
200 to the clustering of BCP molecules on indium tin oxide (ITO) surfaces, which is a significant problem
202 e was over-coated with a thin film of indium tin oxide (ITO) that served as an optically transparent
204 An optically transparent patterned indium tin oxide (ITO) three-electrode sensor integrated with a
206 is more electrochemically inert than indium tin oxide (ITO) where ITO undergoes reduction-oxidation
208 was covalently bound to a transparent indium-tin oxide (ITO) working electrode, which also served as
209 ted by a 20-nm-thick metallic film of indium tin oxide (ITO), a plasmonic material serving as a low-c
210 t, PC-12 cells interacted poorly with indium tin oxide (ITO), poly(L-lactic acid) (PLA), and poly(lac
211 he most common transparent conductor, indium tin oxide (ITO), with a material that gives comparable p
215 position of the Co-Pi catalyst on the Indium Tin Oxide (ITO)-passivated p-side of a np-Si junction en
221 The working electrode was composed of indium tin oxide (ITO); the quasi-reference and auxiliary elect
223 oparticles (Au NPs) attached to glass/indium-tin-oxide (ITO) electrodes as a function of particle siz
224 rolactone (PCL) electrospun fibers on indium-tin-oxide (ITO) glass provide a sufficient surface to re
226 as coupled to an optically absorptive indium-tin-oxide (ITO) substrate can generate >micrometre per s
229 ing of TPDSi(2) to PLED anodes (e.g., indium tin oxide, ITO) and its self-cross-linking enable fabric
230 r 100-fold enhancement after deposition of a tin oxide layer of appropriate thickness (~310 nm).
233 ovalently immobilized on a mesoporous indium tin oxide (mesoITO) scaffold for efficient alcohol oxida
236 Because of coupling between linked indium tin oxide nanocrystals, their infrared absorption shifts
237 of mesoporous, transparent conducting indium tin oxide nanoparticle (nanoITO) electrodes to prepare b
239 tion from an individual semiconductor indium tin oxide nanoparticle is significantly enhanced when co
240 near field localized at its gap; the indium tin oxide nanoparticle located at the plasmonic dimer ga
242 10(6)-fold compared with an isolated indium tin oxide nanoparticle, with an effective third-order su
243 e a gas sensor using grain growth-suppressed tin oxide nanoribbons, which exhibited both high sensiti
244 ub-picosecond optical nonlinearity of indium tin oxide nanorod arrays (ITO-NRAs) following intraband,
246 r cells have a p-i-n structure (glass/indium tin oxide/NiO(x)/perovskite/ZnO/Al), in which the ZnO la
247 e deposited a high refractive index layer of tin oxide on top of the grating to red-shift the front s
249 tenuation of light passing through an indium tin oxide optically transparent electrode (ITO-OTE) acco
250 ace area conductive metal oxide film--indium tin oxide or antimony tin oxide--coated with a thin oute
253 (NPs)/nanoclusters (NCs) attached to indium-tin-oxide- or fluorine-doped-tin-oxide-coated glass elec
254 ype sensing platform consisting of an indium tin oxide OTE coated with a cation-selective, sol-gel-de
255 hannel integration is the use of gold/indium-tin oxide patterned electrode directly on a porous polym
256 ovskite solar-cell devices made on an indium tin oxide/poly(ethylene terephthalate) substrate via a l
257 conductive transparent electrodes for indium tin oxide replacement, e.g. in light-emitting diodes, or
258 polymerizing polyaniline (PANI) on an indium tin oxide screen-printed electrode (ITO SPE), we achieve
264 bsequently templated to nanoscale silica and tin oxide (SnO(x)) that follow the architecture, as conf
266 acid (OA) reacts with this amine to produce tin oxide (SnO(x)), facilitating the formation of an NC
270 Spiro-OMeTAD/Au, where FTO is fluorine-doped tin oxide, sTiO2 indicates solid-TiO2, and mpTiO2 is mes
271 In arrays of gold nanoparticles on an indium tin oxide substrate and arrays of 100-nanometer-diameter
276 of their counterparts on rigid glass/indium tin oxide substrates, reaching a power conversion effici
278 ygen species, incorporated in antimony-doped tin oxide supports can effectively control the Ir oxidat
279 op a copper/tin-oxide catalyst with dominant tin oxide surface being formed via a spontaneous exchang
280 ubes that have been immobilised on an indium tin oxide surface functionalised with osmium-based compo
282 al that the tin sites on the tin-rich copper/tin-oxide surface achieve a suitable binding with adsorb
283 ieve this first requires showing that indium tin oxide surfaces can be used for SMLM, then that these
288 lue spot electrodeposited on an indium-doped tin oxide thin film as the electrochromic indicator.
291 ting group on the nucleophilic oxygen at the tin oxide transport layer surface through the eliminatio
292 s indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron d
293 tu-grown over a conductive substrate (indium tin oxide) using a low-temperature template-based co-pre
294 ectrode based on transparent layer of indium tin oxide was electrochemically modified with a layer of
295 ct a cell, voltage was applied to the indium-tin oxide while simultaneously applying vacuum at the di
296 s solution of 1 on TiO(2)-coated fluorinated tin oxide windows (TiO(2)/FTO), immersion in wet acetoni
299 presentative organic semiconductors and zinc-tin-oxide (Zn-Sn-O) as a representative inorganic semico
300 obility, 28.0 cm2 V(-1) s(-1), was from zinc tin oxide (ZTO), with an on/off ratio of 2 x 10(4).