ライフサイエンスコーパス: vacancy

1 2+)(Fe(2x/3)(3+), (x/3))(HCOO)(3) ( = B-site vacancy).

2 diamagnetic circulating current around the S-vacancy.

3 us O(2) adsorption onto the resulting oxygen vacancy.

4 f each host, attributed to the native sulfur vacancy.

5 e generation and stabilization of the oxygen vacancies.

6 e to accommodation of large amount of oxygen vacancies.

7 nsport mass, a process enabled by structural vacancies.

8 lowed, there is generally some population of vacancies.

9 und to be significantly larger than those of vacancies.

10 median income, business growth, and housing vacancies.

11 y lose piezoelectricity mainly due to oxygen vacancies.

12 e) diffusion of O-adatoms and oxygen surface vacancies.

13 e oxygen substitutional defects, rather than vacancies.

14 ility than the same structure without en and vacancies.

15 crystalline structure in the form of oxygen vacancies.

16 ponding bandgap energy by introducing oxygen vacancies.

17 eck coefficient, which show no signs of lead vacancies.

18 model that considers roles of tSCs including vacancies.

19 erpart due to the prevalence of intrinsic Ge vacancies.

20 lour centres-namely the Si-, Ge-, Sn- and Pb-vacancies.

21 ther, the process appears to be driven by Fe vacancies.

22 also preferred sites for the induced oxygen vacancies.

23 ween MoS(2) and TiO(2,) specifically, oxygen vacancies.

24 rticles and MoS(2) , rather than only sulfur vacancies.

25 round undercoordinated sites, such as sulfur vacancies.

26 ed to create high-density interfacial oxygen vacancies.

27 lid-solutions, or compounds with statistical vacancies.

28 to generate high concentrations of titanium vacancies.

29 arly doubles the natural concentration of Sn vacancies.

30 hases upon oxidation, thereby creating anion vacancies.

31 pe cobalt atom cluster with a central sulfur vacancy (3Co(Mo)-V(S)) renders the distinct electrocatal

32 o metal atoms/ions adsorption into intrinsic vacancies, a conductive-point mechanism supported by fir

33 By contrast, we find W vacancies accelerate recombination by more than an order

34 eory show how the terminal OH groups on node vacancies act as Bronsted bases, facilitating TBA dehydr

35 aled at high temperature to eliminate oxygen vacancies, Al is doped into the ZnO nanosheet, and the m

36 isely tunable strain and sulfur vacancies (S-vacancies) along with rich edge sites are synthesized vi

37 mulating morphology, affluent surface-oxygen-vacancies and chemical compositions for enhanced generat

38 st roughness and might exhibit lowest oxygen vacancies and defects.

39 defects in amorphous materials, analogous to vacancies and dislocations in crystals, remains elusive.

40 nverse and reversible balance between cation vacancies and electrons, while the mobility of ionic spe

41 rystal structure, which increases the oxygen vacancies and exposes more W active sites, optimizes the

42 talysis mechanism, revealing abundant oxygen vacancies and holey lamellar framework contribute to the

43 imensional (2D) solids, point defects, i.e., vacancies and interstitials, are bound states of topolog

44 (0.5)Pb(0.5)I(3) structure has massive Pb/Sn vacancies and much higher chemical stability than the sa

45 This doping explains the presence of oxygen vacancies and reduced Ti states at the surface, which en

46 Accelerated recombination arises for W vacancies and Se(W) antisites because they introduce new

47 addition to a reduction in the number of Li vacancies and shrinkage of the Li-layer size, the intrin

48 atalytic performance, but the role of sulfur vacancies and the mechanism determining the reaction kin

49 rease of both the formation energy of oxygen vacancies and the migration barrier of oxidized oxide io

50 tal structure containing cation disorder and vacancies and the observed transport properties, which f

51 e impact of the ternary alloys on the cation vacancies and thermoelectric properties.

52 y of one axon and also by increased areas of vacancies and tSCs suggesting that the areas are importa

53 on is strongly dependent on the diffusion of vacancy and implanted He atoms.

54 The fundamental point vacancy and nanopore structures in PbI(2) monolayers are

55 128-channel, defect-free array of germanium-vacancy and silicon-vacancy colour centres in an alumini

56 BCC lattice parameter, reduced the Fe local vacancies, and lowered the resistance to electron transf

57 at defects in nanosilica (E' centers, oxygen vacancies, and nonbridging oxygen hole centers) convert

58 st probable defects, namely, Se vacancies, W vacancies, and Se(W) antisites.

59 o understand the interplay between alloying, vacancies, and the transport properties of SnTe.

60 through phases of construction, demolition, vacancy, and redevelopment, each impacting water movemen

61 mbardment and interfacial redox reaction and vacancy annihilation through oxidation.

62 oodite (gamma-Mg2SiO4), additionally, Si(4+) vacancies are formed, even at a water content as low as

63 Chalcogen vacancies are generally considered to be the most common

64 intercalated by electrolyte gating or oxygen vacancies are introduced by adjusting growth conditions.

65 In contrast, CoO films without O-vacancies are much less active for CO(2) formation at RT

66 significant proportion of coupled Mg and Si vacancies are present.

67 The plane site vacancies are reoccupied during post-annealing treatment

68 Oxygen vacancies are ubiquitous in metal oxides and critical to

69 layered oxides suffer from an ordered Na(+) /vacancy arrangement and P2->O2/OP4 phase transitions, le

70 Conventionally presumed to be random(12,13), vacancy arrangements are crucial because they control mi

71 We identify a diversity of non-random vacancy arrangements that is hidden from conventional cr

72 This system establishes B-site vacancies as a new type of defect in formate perovskites

73 e further rules out point defects such as Br vacancies as an alternative mechanism.

74 or disappears, further confirming the oxygen vacancies as being responsible for the memristive behavi

75 1, 2), respectively), not created by oxygen vacancies as is normally the case in oxide materials.

76 d MoS(2-x) polycrystalline nanosheets with S vacancies as the catalysts are loaded onto carbon cloth

77 Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great

78 Long range vacancy assisted lithium diffusion paths were calculated

79 Vacancy assisted long range lithium diffusion paths were

80 the metastable CoO(2) termination enables a vacancy-assisted O(2) dissociation that is 10(2)-10(3) t

81 paper, a systematic study of the dissociated vacancies at screw dislocations in MgO is carried out.

82 In particular, the dissociated nature of vacancies at screw dislocations, or more generally, at a

83 The accumulation of oxygen vacancies at the Cu2O/Cu interface drives the collapse o

84 However, the presence of numerous iodine vacancies at the surface of the film formed by their eva

85 y the favorable impacts of band convergence, vacancy-augmented hole concentration, and lattice soften

86 th conditions (inducing disorder by samarium vacancies, boron interstitials, etc.), the bulk resistiv

87 hose in Cu, implying the easier formation of vacancies by lattice structure relaxation of HEAs at ele

88 phase-field simulations, we show that oxygen vacancies can move under a stress-gradient-induced depol

89 at act as a reversible redox center, and the vacancy can easily activate O(2) to replenish the consum

90 predicted mechanism is different from the W vacancy case.

91 The in-gap states in sulphur line vacancies cause 1D electron-rich channels that are mappe

92 mond, such as the negatively charged silicon vacancy center (SiV), feature spin qubits that are highl

93 easurements and spatially resolving nitrogen-vacancy center magnetometry, we show that Fe:MoS(2) mono

94 emented the QRB-guided imaging with nitrogen-vacancy centers in diamond nanocrystals, which enable op

95 ious works based on quantum dots or nitrogen-vacancy centers in diamond, our proposal does not requir

96 atomic-scale imaging using a single nitrogen vacancy centre as a quantum sensor, and demonstrate it o

97 onstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both draw

98 etected emission from bright single nitrogen vacancy centres hosted in the fabricated nanodiamonds.

99 um spin magnetometers realized with nitrogen vacancy centres in diamond.

100 stems from exciton recombination at bromide vacancy centres within lead-halide octahedra, unrelated

101 1) oriented SrFeO(2.5) devices, where oxygen vacancy channels are ordered along the in-plane directio

102 5) devices with out-of-plane oriented oxygen vacancy channels, reaching from the bottom to the top el

103 The charge ordered structure of ions and vacancies characterizing rare-earth pyrochlore oxides se

104 The molecular O(2) is trapped rigidly within vacancy clusters and exhibits minimal mobility unlike fr

105 atomic scale diffusion mechanisms of solute-vacancy clusters.

106 -free array of germanium-vacancy and silicon-vacancy colour centres in an aluminium nitride PIC.

107 A BSO photoanode with optimum oxygen-vacancy concentration (8.7%) exhibits high light-absorpt

108 rea to volume ratio, reactive surface oxygen vacancy concentration and superior oxygen storage capaci

109 We predict that a high vacancy concentration on the metastable CoO(2) terminati

110 In NaSn(m)SbTe(m+2) however, the doubled vacancy concentration raises the charge carrier density

111 r calculation, e.g., diffusion coefficients, vacancy concentrations and applied stresses.

112 er the general condition of sustained excess vacancy concentrations.

113 hanism is identified based on classic oxygen vacancy conductive channels.

114 ow that extremely strong sorption of Tl onto vacancy-containing layered delta-MnO(2) at low dissolved

115 Point defects, such as oxygen vacancies, control the physical properties of complex ox

116 between short range order and cation-oxygen-vacancy coordination remains a subject of active debate.

117 terials engineering, particularly to avoid W vacancies, could advance this technology.

118 Vacancies created at selected crystallographic positions

119 significantly promote the recovery of oxygen vacancy created via the M-vK mechanism.

120 cisely create, control, and transport oxygen vacancies critical for developing ionotronic and memrist

121 We directly probe the oxygen vacancy defects in both plane and chain sites after irra

122 The quantum spin properties of nitrogen-vacancy defects in diamond enable diverse applications i

123 the statistical ensemble behavior of oxygen vacancy defects is deterministic even when individual de

124 The vacancy-dependent effective free volumes in both CoCrFeN

125 ns and their functions, and vacant sites (or vacancies) devoid of tSCs and axons proposing tSCs as ke

126 solute atoms and crystalline defects such as vacancies, dislocations, and grain boundaries are essent

127 An increase in Fe-structural/vacancy disorder in SC samples with more Fe atoms occupy

128 urthermore, we demonstrate that the proposed vacancy dissociation mechanism can also be extended to m

129 al that substitution of metal ions into h-BN vacancies during electrical switching is a likely mechan

130 46 megahertz) for germanium-vacancy (silicon-vacancy) emitters, close to the lifetime-limited linewid

131 tuning the WS(2) layer number, strain, and S-vacancies enables arguably the best-performing HER 2H-WS

132 Vacancy engineering has been proved repeatedly as an ado

133 Vacancy engineering is an effective strategy to manipula

134 at Pd atoms tend to migrate into the surface vacancy-enriched MoC surface during the carburization pr

135 reactions in a zinc-air battery catalyzed by vacancy-enriched oxidized carbon; the intensity changes

136 Oxygen vacancies, especially their distribution, are directly c

137 d to in-gap states associated with chalcogen vacancies, even in the absence of direct experimental ev

138 nd showed a conserved selectivity for the 5'-vacancy, except for cGMP.

139 angstrom inter active-site distance and 33 % vacancies exhibited unprecedented high turnover frequenc

140 Vacancies exist throughout nature and determine the phys

141 ar, and phosphate moieties to the specific G-vacancy fill-in.

142 tron microscopy-based analyses assuming that vacancies form randomly and are taken over by adjacent a

143 ored chemical treatments that mitigate anion vacancy formation and improve the performance of CuInSe(

144 tional theory (DFT) calculations reveal that vacancy formation energies at the planar oxygen sites in

145 reduced heterostructure disorder and larger vacancy formation energies of the two-dimensional perovs

146 bent oxygen sites, respectively, with lower vacancy formation energies.

147 tion of possible mechanisms of acid-assisted vacancy formation in bulk transition metal oxides, in pa

148 on determined primarily by a balance between vacancy formation through particle bombardment and inter

149 h Pd-Ti coordination, which manifests upon O-vacancy formation, and the artificial increase in TiO(2)

150 al structures and represent the first binary vacancy-free T5 and T6 supertetrahedra.

151 roversies in the literature regarding oxygen vacancy function, providing new insights into their impa

152 he PDGFR-beta gene promoter sequence forms a vacancy G-quadruplex (vG4) which can be filled in and st

153 the use of ionic interfaces to create oxygen vacancies has not been fully explored.

154 Samples in which the oxygen vacancies have been eliminated by annealing in oxygen ex

155 cts in diamond-alone and in association with vacancies, hydrogen, and transition metal atoms.

156 Fine-tuning strain and vacancies in 2H-phase transition-metal dichalcogenides,

157 thod that can systematically generate oxygen vacancies in barium stannate (BaSnO(3) (BSO)) crystal is

158 There are several means to create oxygen vacancies in bulk materials.

159 rotation symmetry nucleated around single S-vacancies in Co(3)Sn(2)S(2.) The SOPs carry a magnetic m

160 Oxygen vacancies in complex oxides are indispensable for inform

161 findings reveal the strong effect of oxygen vacancies in different sites on the superconductivity pr

162 Herein, the critical role of oxidizing the vacancies in enhancing the oxygen reduction reaction for

163 thermore, we show the distribution of oxygen vacancies in NdNiO(3) can be controlled via an electric

164 Oxidizing vacancies in nitrogen-doped carbon have recently been re

165 Deliberate introduction of oxygen-enriched vacancies in nitrogen-doped carbon is shown experimental

166 ations, we found that the presence of oxygen vacancies in partially oxidized CoO(x) films significant

167 Vacancies in semiconductors are excellent candidates, an

168 c occupancy of states associated with oxygen vacancies in situ in BiVO(4) photoanodes, allowing us to

169 verify the existence of bifunctional oxygen vacancies in the 2D black In(2) O(3-) (x) nanosheets hos

170 ables the generation of uniform strain and S-vacancies in the as-grown WS(2) nanosheets, and simultan

171 ke is a result of oxygen atoms occupying the vacancies in the hydrophilic exfoliated flakes and subse

172 This was shown to be likely due to surface vacancies in the less-ordered particles.

173 tress-induced concentration change of oxygen vacancies in the memristive oxide channel layer.

174 cycles of ordering and disordering of oxygen vacancies in the subsurface.

175 functional theory calculations, the selenium vacancy in ReSe(2) crystal can enhance its electroactivi

176 xides, where a valence band electron fills a vacancy in the 2s state of oxygen, transferring sufficie

177 ain induced ordering of defects (e.g. oxygen vacancies) in thin oxide films, considering both the ord

178 , therefore enabling the migration of oxygen vacancies into the bulk lattice of the cathode.

179 shift the reaction toward generating oxygen vacancies is lacking and to fill this blank in synthetic

180 s verify that the formation energy of oxygen vacancies is largely decreased under external strain.

181 rgy sites of the nanoparticle where cationic vacancy layers intersect with surface facets.

182 dic van der Waals' (vdW) gaps (i.e., virtual vacancy layers) in the stack of atomic layers and the co

183 tron density owing to the presence of oxygen vacancies, leading to efficient electron transfer from p

184 xistence of these hetero-anions and titanium vacancies leads to a complex insertion mechanism, attrib

185 Long range lithium paths via the vacancy mechanism were constructed and it is confirmed t

186 vacancies required for Li diffusion via the vacancy mechanism.

187 ere we develop a stochastic model of tSC and vacancy mediated synapse elimination.

188 ccelerated molecular dynamics simulations of vacancy-mediated cation diffusion in Gd2Ti2O7 pyrochlore

189 The activation energies for vacancy-mediated diffusion of B-site cations are much hi

190 o a transition from interstitial-mediated to vacancy-mediated diffusion.

191 ore the importance of the interfacial oxygen vacancy migration and redistribution in controlling the

192 onolayers are directly imaged, showing rapid vacancy migration and self-healing.

193 ab initio calculations and found that oxygen vacancy migration from TiO(2) to VO(2) is responsible fo

194 erostructures by inducing interfacial oxygen vacancy migration.

195 When proton vacancies mimicking the KOH impurities are planted into

196 ns (NCCs) of a system formed by two nitrogen-vacancy (N-V) centers placed in two spatially separated

197 ed on both V and P sites in order to form Li vacancies needed for Li diffusion and the Li interstitia

198 idden phase boundaries that emerge demarcate vacancy-network polymorphs with very different micropore

199 long-standing obstacle to characterizing the vacancy networks of PBAs is the inaccessibility of singl

200 Among these, the negatively charged nitrogen-vacancy (NV(-)) defect in diamond is attracting particul

201 uantum emitters such as the diamond nitrogen-vacancy (NV) center are the basis for a wide range of qu

202 to color-center-assisted DNP using nitrogen-vacancy (NV) centers in diamond coupled to substitutiona

203 Nitrogen vacancy (NV) centers in diamond offer an appealing platf

204 text] nuclei in diamond coupled to Nitrogen Vacancy (NV) centers over a wide field range (1 mT-7 T).

205 s have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental p

206 le sensing platform that integrates nitrogen-vacancy (NV) color centers directly into the culet of di

207 Coherent manipulation of shallow nitrogen-vacancy (NV) color centers enables the probing of nanosc

208 and high magnetic sensitivity, the nitrogen vacancy (NV) colour centre in diamond is one of the lead

209 Nitrogen-vacancy (NV) quantum defects in diamond are sensitive de

210 O atom to produce CO(2) , yielding an oxygen vacancy (O(vac) ).

211 s, electrons that are associated with oxygen vacancies occupy the conduction band, leading to an incr

212 (2-) of Li-salt anion and the surface oxygen vacancies of each oxide and contributes to the more faci

213 ar network with a concentration of hexagonal vacancies of eta = 1/5.

214 nts, and neutron diffraction to estimate the vacancy of CoCrFeNi and CoCrFeMnNi high-entropy alloys (

215 the Ni dopants cluster around surface oxygen vacancy of the host oxide and provide an ideal electroni

216 H(+) binding sites, Ce(3+) locations, and O vacancies on (100) facets.

217 The number of vacancies on the nodes is important in determining a tra

218 as been attributed to a generic site at an S-vacancy on the edge of MoS(2) particles.

219 A sulfur vacancy on the MoS(2-x) basal plane mimicking the natura

220 Vacancies or mixed-metal strategies for charge compensat

221 For large x, the vacancies order, lowering the crystal symmetry.

222 single-crystal nanowires exhibiting 5 x 5 Fe-vacancy order and mixed valence of Fe.

223 hin film superlattices possessing both anion-vacancy order and Sr and Ca chemical order at the subnan

224 t fit the data at a temperature below the Fe vacancy order temperature.

225 eighbor vacancy repulsions show checkerboard vacancy order to emerge for x > 0.6, in accord with expe

226 wave theory to the recently discovered 5 x 5 vacancy ordered chalcogenide Rb(0.89)Fe(1.58)Se(2) for r

227 nal space group R3 m and can be described as vacancy-ordered double-perovskites.

228 spin-orbital coupling is crucial in 5 x 5 Fe vacancy-ordered Fe(4+delta)Se(5) at low temperatures.

229 Perovskite oxides can host various anion-vacancy orders, which greatly change their properties, b

230 e catalyst support design focusing on oxygen vacancy (OV)-rich, low-bandgap semiconductor is proposed

231 the energetics of substitutional phosphorous-vacancy pairs (E-centres) in Si(1-x)Ge(x) alloys vary gr

232 t the dramatic decrease of lifetime for core-vacancies parallel to the covalent bond is a manifestati

233 rain-induced creation and switching of anion-vacancy patterns in perovskite films.

234 simple perovskite oxides with tunable anion-vacancy patterns through epitaxial lattice strain.

235 of the surface and a formation of extensive vacancy pits within a period of microseconds.

236 apse of the atomically thick triangle-shaped vacancy platelets can directly produce <c> dislocation l

237 of a novel defect, nanoscale triangle-shaped vacancy plates.

238 ations indicate that compared with strain, S-vacancies play a more critical role in enhancing the HER

239 Oxygen vacancies play crucial roles in defining physical and ch

240 increased site disorder and a higher lithium vacancy population.

241 operation of a rechargeable battery, oxygen vacancies produced at the surfaces of lithium-rich layer

242 of unique mesoscopic architecture and atomic vacancies provide both effective mass transportation and

243 planar B36 cluster with a central hexagonal vacancy provided the first experimental evidence of the

244 sociated with coupled O-Fe and protonated Fe vacancies, providing a potential link between crystal ch

245 ormance, but few reports focus on phosphorus vacancies (Pv).

246 The core vacancies relax efficiently by Auger cascades, leading t

247 Carlo simulations driven by nearest-neighbor vacancy repulsions show checkerboard vacancy order to em

248 0.45 eV/defect) ensuring the formation of Li vacancies required for Li diffusion via the vacancy mech

249 ave to be described as (Si,Ti)(3)N(4) with N-vacancies resulting in the general composition (Si(4+)(1

250 A random array of vacancies results in a modest performance enhancement co

251 SnTe, the naturally large density of cation vacancies results in excessive hole doping and frustrate

252 reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistan

253 x) material comprised of small, crystalline, vacancy-rich anatase nanoparticles (NPs) shows unique op

254 we report a novel method by burying selenium vacancy-rich ReSe(2) @carbonized bacterial cellulose (V(

255 Our results show that oxygen vacancy rows are not only natural oxygen diffusion chann

256 ets with precisely tunable strain and sulfur vacancies (S-vacancies) along with rich edge sites are s

257 f 54 megahertz (146 megahertz) for germanium-vacancy (silicon-vacancy) emitters, close to the lifetim

258 ygen and a pyridine-like nitrogen across the vacancy site.

259 of In(2)O(3) due to the formation of oxygen vacancy sites (i.e., In(2)O(3-x)).

260 d MOF-808, which have different densities of vacancy sites and different pore sizes.

261 s, however, we find that its adsorption at S-vacancy sites away from the MoS(2) particle corners lead

262 hrough time Mn(II) will occupy both edge and vacancy sites due to the continuous supply of Mn(II).

263 tions in S-coordination means that not all S-vacancy sites should be considered equally active.

264 lated active single Pt ions bonded at the Ti vacancy sites with 5 or 6 oxygen ions on titania nanowir

265 ost sites: native interstitial sites, single vacancy sites, and paired vacancy sites.

266 Triclinic birnessite, which features no vacancy sites, and todorokite, a 3 x 3 tectomanganate, b

267 Thiophene adsorbs directly at open corner vacancy sites, however, we find that its adsorption at S

268 tial sites, single vacancy sites, and paired vacancy sites.

269 We predict that Se vacancies slow down recombination by nearly an order of

270 , which hosts long-lifetime room temperature vacancy spin defects.

271 We find that oxygen vacancies stabilise the spin liquid phase and the stuffi

272 Sm or Nd), electrons associated with oxygen vacancies strongly localize, leading to a dramatic decre

273 ements show much higher percentage of oxygen vacancies than those determined by X-ray diffraction ana

274 e mechanisms are (i) the formation of oxygen vacancies that couples to the electrostatic energy of th

275 ation of PMS by itself and stabilized oxygen vacancies that enhance the bonding with PMS and provide

276 ay is enabled by the large influx of surface vacancies that results from heating a nanoscale solid.

277 a strategy is demonstrated to create oxygen vacancies through making the reaction energetically more

278 (2.55) ) with a high concentration of oxygen vacancies to demonstrate two oxide/poly(ethylene oxide)

279 nd an electron to the adsorbed N(2) on the N vacancies to form N(2) H.

280 inimize interfacial and bulk defects and ion vacancies to maximize charge transfer.

281 ing local HER activities by producing sulfur vacancies using electrochemical reaction at the selected

282 ansferred hot electrons either occupy oxygen vacancies (V(O) ) or produce Ti(3+) on TiO(2) , while th

283 sheet with simultaneous N dopants and oxygen vacancies (V(O) -rich N-SnO(2) NS) for promoting CO(2) c

284 controls the concentration of surface oxygen vacancies (V(O)) in these materials whereby an increased

285 s an effective dopant to modulate the oxygen vacancy (V(O) ) concentration and Ti(3+) formation, whic

286 ting nanoheterojunctions and creating oxygen vacancy (V(O)) in spinel NiCo(2)O(4).

287 O oxidation activity than that on the oxygen vacancy (V(o))-rich Au/TiO(2) interface, at which electr

288 in a cluster that bears a single oxygen-atom vacancy, [V(6)O(6)(OC(2)H(5))(12)](0).

289 ree of the most probable defects, namely, Se vacancies, W vacancies, and Se(W) antisites.

290 Using this controlled placement of oxygen vacancies we observe a greater than 40-fold enhancement

291 particular, we study the generation of anion vacancies, which are critical defects in chalcogenide se

292 114 meV presumably associated with nitrogen vacancies, which could be the cause for the observed sel

293 he TiO(2) (101) surface with multiple oxygen vacancies, which is beneficial for generating different

294 ZnO nanosheets provide a 2D host for oxygen vacancies, while the amorphous Al(2) O(3) facilitates th

295 emperature grown interfaces stem from oxygen vacancies with a concentration determined primarily by a

296 more rapidly replenishing corrosion-injected vacancies with alloy constituents, thus playing the cruc

297 er potential color centers based on fluoride vacancies with multiple potential charge states are also

298 Yet, recent work also associates the vacancies with suppressed sound velocities and low latti

299 nal theory to reveal how the generation of S-vacancies within MoS(2) nanoparticles and the subsequent

300 At this junction, the lithium vacancies within the delithiated LiNiO(2) optimize the e