ライフサイエンスコーパス: valence band

1 sport both in the conduction band and in the valence band.

2 ity originates from the N 2p levels near the valence band.

3 carbocation, introducing a hole in the SWNT valence band.

4 tial and the resulting spin splitting of the valence band.

5 on of spin orbit coupling to the form of the valence band.

6 holes due to a larger spin-orbit gap in the valence band.

7 ted holes moving more quickly out of the CdS valence band.

8 ssociated with the formation of holes in the valence band.

9 tant motions of the inorganic conduction and valence band.

10 s a result of the decay of deep holes in the valence band.

11 ng by injecting holes into the semiconductor valence band.

12 es and decrease the energy of the light hole valence band.

13 the band gap and spin-orbit splitting of the valence band.

14 ers changes within graphene's conduction and valence bands.

15 tors with an anti-bonding character in their valence bands.

16 tates from the distinct moire conduction and valence bands.

17 of Chern numbers between the conduction and valence bands.

18 f trapped carriers back up to the conduction/valence bands.

19 ndicated by the overall movement of the deep valence bands.

20 c moment of carriers from the conduction and valence bands.

21 ergy-consuming Auger recombination and inter-valence band absorption loss mechanisms, which greatly i

22 amined the relationship between anti-bonding valence bands (ABVBs) and low lattice thermal conductivi

23 This approach for valence band alignment can explain observations relating

24 mobilities because of the matrix/precipitate valence band alignment.

25 CdS, CdSe, ZnS, and ZnSe, we infer favorable valence band alignments between PbSe and compositionally

26 y of Bi(0.5)Sb(1.5)Te(3), allowing the extra valence band along [Formula: see text]-[Formula: see tex

27 (2,6) has strongly dispersive conduction and valence bands along the 1D crystal axis.

28 Furthermore, valence band analysis by X-ray photoelectron spectroscop

29 region arises from the N 2p levels near the valence band and from the color centers induced by the o

30 f an intermediate band (IB) located near the valence band and of individual electronic gap states.

31 contribution to in the top of the heavy hole valence band and raise its energy.

32 nalyze the splitting of states at the top of valence band and the bottom of conduction band, followin

33 on the relative positions of the top of the valence band and the bottom of the conduction band in cr

34 ble step-like feature near the bottom of the valence band and then remains almost constant with incre

35 Aided by energy-converged valence bands and a paramagnon drag effect, high Seebeck

36 Because of their spin-polarized valence bands and a predicted spin splitting at the cond

37 en the light (L-band) and heavy (Sigma-band) valence bands and higher lattice thermal conductivity (k

38 mplicated initial transfer of energy between valence-band and defect states, indicating methods to fu

39 and edges derived principally from Ag-d/I-p (valence band) and Bi-p/I-p (conduction band) states.

40 tronic density of states near the top of the valence band, and (iii) a Fermi level that lies in the s

41 nisotropic g-factors for both conduction and valence bands, and elucidate the magnetic-field effect o

42 s leading to inversion of the conduction and valence bands, and spin-orbit coupling.

43 We demonstrate that a simple valence band-anticrossing model, parametrised directly f

44 cesses involving the filling of holes in the valence band are thought to make important contributions

45 lation at twice the phonon frequency for the valence bands are observed at time scales ranging from t

46 IX and intralayer excitons, sharing the same valence band, are excited simultaneously.

47 ti-bonding character of the highest-occupied valence band as an efficient descriptor for discovering

48 p electronic transition and is absent in the valence band as revealed by resonant inelastic X-ray sca

49 hotoelectron spectroscopy reveals a quasi-1D valence band as well as a direct gap of 1.15 eV, as the

50 nergy, that may lead to free carriers in the valence band at finite temperature.

51 ting from both edge and deeper states in the valence band being bright for certain configurations of

52 offset minimization through the alignment of valence bands between the host PbS and the embedded seco

53 (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than th

54 rgy separation between light- and heavy-hole valence bands by widening the principal band gap, which

55 l properties of films such as conduction and valence band, carrier densities, Fermi level, flat band

56 on on the active metal site and consequently valence band center position of site-mixed Y(2)(Y(x)Ru(1

57 d Ru oxidation state leads to a downshift in valence band center.

58 ctroscopy, a technique uniquely sensitive to valence band charge excitations.

59 These structures enhance a valence-band CM channel due to effective capture of ener

60 o induces the opposite spin splitting of the valence bands compared to the Sb-free host, and the resu

61 figuration along with holes in the oxygen 2p valence band, confirming suggestions that these material

62 , and show that defects mostly influence the valence band, consistent with the observation of ultrahi

63 This strong valence band convergence and enhanced phonon scattering

64 that both NaSbTe(2) and NaBiTe(2) facilitate valence band convergence and simultaneously narrow the b

65 e due to the synergy of resonance levels and valence band convergence, as demonstrated by the Pisaren

66 the Seebeck coefficient by facilitating the valence band convergence.

67 mimetals are systems in which conduction and valence bands cross each other and the crossings are pro

68 The measured valence band density of state spectra clearly shows the

69 s are used to demonstrate a splitting of the valence band due to the band anticrossing interaction be

70 ly alters the exchange splitting of the bulk valence bands during laser excitation.

71 At filling factor nu = 3 of the moire valence bands, each edge contributes a conductance 3/2G0

72 are caused by the offset between the BiVO(4) valence band edge and the triiodide/iodide electrochemic

73 illed defect gap states lying just above the valence band edge and they are shown to give a consisten

74 of at least nine distinct states between the valence band edge and vacuum energy, including a valence

75 w the band gap is affected by a shift of the valence band edge as a function of the layer number.

76 ructured electronic fringes near the silicon valence band edge as observed by angle-resolved photoemi

77 laser illumination-induced process moves the valence band edge at the n-type semiconductor/water inte

78 alysts on any semiconductor electrode with a valence band edge located at a more positive potential t

79 mi energy level based on the analysis of the valence band edge of these Ru-based Y(2)(Y(x)Ru(1-x))(2)

80 confined hole state 260 to 70 meV above the valence band edge state for NCs with edge lengths from a

81 a +/- transition level at 0.24 eV above the valence band edge.

82 t, resulting in a red-shifted band above the valence-band edge of MIL-125.

83 Sn(2+) ion situated roughly 1.4 eV above the valence-band edge.

84 ly and sufficiently broadly that it prevents valence-band-edge states from being thermally depopulate

85 racter and large spin-orbit splitting of the valence band edges (at the K and K' valleys) in monolaye

86 The calculations predict conduction and valence band edges in Zn2NF to be favorable for water sp

87 r to predict the shift of the conduction and valence band edges of solvated cQDs.

88 on the absolute energy of the conduction and valence band edges.

89 resselhaus term, at both the conduction- and valence-band edges.

90 explored Auger transition in oxides, where a valence band electron fills a vacancy in the 2s state of

91 f atoms locally affect the orbital motion of valence band electrons, which, in the presence of an ext

92 the valence bandedge of InAs CQDs, producing valence band energies as shallow as 4.8 eV.

93 t can dramatically change the conduction and valence band energies of both the core and the shell.

94 o photocatalysts of staggered conduction and valence band energy levels can increase the photocatalyt

95 ensity functional theory for calculations of valence band energy levels of nanoscale precipitates of

96 these nTP device resistances track with the valence band energy levels of the PM(n) wire, which were

97 The valence band energy of the donor mixed halide perovskite

98 and (c) the NC diameter, which controls its valence band energy, E(VB).

99 Valence band engineering in this way offers an attractiv

100 us, alloying with Cd atoms enables a form of valence band engineering that improves the high-temperat

101 M-EELS as a versatile technique sensitive to valence band excitations in quantum materials.

102 ption is induced by secondary electrons from valence band excitations, consistent with an exactly sol

103 We find that the valence band exhibits a stronger dispersion than those i

104 favorable electronic structure with multiple valence band extrema within close energy concurrently gi

105 Valence-band features shift to higher binding energy wit

106 Theoretical analysis unveils a delocalized valence band from tellurium 5p bands with shallow accept

107 istribution of the pseudospin texture of the valence band from the polarization dependence of angle-r

108 aration of the non-degenerate conduction and valence bands from adjacent bands results in the suppres

109 n accompanying tunable spin splitting of the valence bands further reveals a complex interplay betwee

110 was recently demonstrated, transport in the valence band has been elusive for solid-state devices.

111 ctors, a conduction-band electron attracts a valence-band hole (electronic vacancy) to create a bound

112 inate from recombination of a photogenerated valence-band hole and an occupied donor level, probably

113 calized in the shell while the lowest energy valence-band hole is localized in the core.

114 ibutions of the conduction-band electron and valence-band hole wave functions through the choice of t

115 ear spins and a spin of a single electron or valence-band hole.

116 Due to the photoformed valence band holes and selective two-electron reduction

117 rgetic to reduce water, while the associated valence band holes are energetically able to oxidize wat

118 cals of the type Ti-O(*) and Ti-O(*)-Ti from valence band holes based on their solvation at aqueous i

119 rmediates formed by trapping photogenerated, valence band holes on different reactive sites of the ox

120 ten accepted view that T(C) is controlled by valence band holes, thus opening new avenues for achievi

121 rmined by the density of accumulated surface valence band holes.

122 ng low-energy positrons (<1.25 eV) to create valence-band holes by annihilation.

123 ndicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger t

124 in MeOH under constant illumination produce valence-band holes that oxidize MeOH.

125 The sulfur orbitals compose the top of the valence band in (CYS)PbX(2), affording unusually small d

126 t shows a Hush-type Robin-Day class II mixed valence band in its optical spectrum despite the fact th

127 a higher contribution from Ag(I) ions to the valence band in the photodimerized solid, supporting the

128 angle-resolved photoemission studies of the valence band in this model compound.

129 s from localized core levels and delocalized valence bands in solids.

130 ration between the light-hole and heavy-hole valence bands in the material, leading to an enhanced Se

131 romagnetism upon doping arises from a Dirac (valence) band in a non-ideal Lieb lattice with strong el

132 ima in the conduction band (or maxima in the valence band) in momentum space, and if it is possible t

133 opping between Fe atoms, forming a localized valence band, in particular Fe 3d-electronic structure,

134 rgy lies sufficiently close to the insulator valence band, in which case, hole tunneling dominates.

135 case, the Fermi energies reside close to the valence band, indicative of a p-type semiconductor.

136 s (electrons in conduction bands or holes in valence bands)--internal properties of the system that a

137 The valence band is also heavily altered due to oxidation an

138 n which an electron that is excited from the valence band is bound by the Coulomb interaction to the

139 tion of the Pt 5d densities of states in the valence band is conducted on a series of Pt-Ni alloys by

140 lator emerging from half filling of the flat valence band is spin unpolarized and suggest that its co

141 doping introduces resonant levels inside the valence bands, leading to a considerably improved Seebec

142 oping introduces resonance levels inside the valence bands, leading to a significant improvement in t

143 olecular orbitals (HOMO) with respect to the valence band level of the perovskite, and time-resolved

144 e tailor the electronic structure of its two valence bands (light hole L and heavy hole Sigma) to mov

145 their transparency to visible light and deep valence bands makes them suitable for tandem photovoltai

146 ir constituent holes originate from the same valence band, making possible the direct optical control

147 the contribution of a specific state in the valence band manifold originating from the hybridized lo

148 out-of-plane electronic structure, with the valence band maxima located away from any particular hig

149 The valence band maxima of most group VI transition metal di

150 ic band structure exhibits nearly degenerate valence-band maxima that help to achieve a high Seebeck

151 COFs, resulting in a large modulation of the valence band maximum (-4.2 to -5.4 eV) and the band gap

152 de distribution of potential barriers at the valence band maximum (VBM) (-10 to -160 meV) and the con

153 iven Q, however, Ag lowers the energy of the valence band maximum (VBM) compared to Cu, and relative

154 nergetics (conduction band minimum (CBM) and valence band maximum (VBM)) of device-relevant, methylam

155 um), with the LUMOs lying ca. 1 eV above the valence band maximum (VBM).

156 th the conduction band minimum (CBM) and the valence band maximum (VBM).

157 ough a gradual decrease in the energy of the valence band maximum and an increase in the conduction b

158 of the frontier CNT orbitals and stabilizes valence band maximum and conduction band minimum.

159 f ~16 eV and a specific band nature with the valence band maximum and the conduction band minimum mai

160 pectroscopy in air (PYSA), we determined the valence band maximum at 5.66 0.05 eV.

161 n films display spin-split states around the valence band maximum at the Brillouin zone corners with

162 l in the 3D COF, and this elevates the COF's valence band maximum by 0.52 eV with respect to the pare

163 here is evidence of mid-gap states above the valence band maximum due to the hydrogenated, engineered

164 4) compared to Cs(2)Ag(2)TiS(4), raising the valence band maximum from -5.26 -> -4.83 eV, which in tu

165 In CrI[Formula: see text], the valence band maximum is dominated by the I 5p, whereas i

166 in-splitting of approximately 180 meV at the valence band maximum of a monolayer MoSe2 film could exp

167 ow that Cu-3d electronic state dominates the valence band maximum of CSTS.

168 ion probability of the 2D hole states at the valence band maximum of SnTe monolayer strongly relies o

169 relies on the two-component character of the valence band maximum of the 1T structure at Gamma, and s

170 ocalized density of states are almost at the valence band maximum of TiO(2) surface, facilitating the

171 We found that the valence band maximum or the minimum energy for holes is

172 ptazine units lead to an upward shift of the valence band maximum resulting in bandgap reduction down

173 alt sublattice of these compounds shifts the valence band maximum to the middle of the Sigma line, in

174 retaining the anti-bonding character of the valence band maximum which is beneficial for p-type cond

175 ce band, the localized N 2p levels above the valence band maximum, and the 3d states of Ti(3+) below

176 ng parameters can be extracted: Fermi level, valence band maximum, conduction band minimum, and a qua

177 s that trap the electrons of Al atoms at the valence band maximum, forming a C-Al-C hole channel alon

178 of the methoxy species is much closer to the valence band maximum, suggesting why it is more photocat

179 ith the upper Hubbard band located above the valence band maximum.

180 ified by the formation of mini-gaps near the valence band maximum.

181 mation of a new impurity band just above the valence band maximum.

182 tials of the conduction band minimum and the valence band maximum; and (iii) bulk and surface charge

183 vation of Mn-induced states between the GaAs valence-band maximum and the Fermi level, centred about

184 ose to Fermi level is increased to raise the valence-band maximum, as revealed by VB-PES spectra, ind

185 metry-allowed optical transition between the valence-band maximum, composed of Mn 3d(x(2)-y(2),xy) st

186 e explained properly by the conventional two-valence band model.

187 s an increased the power factor by virtue of valence band modification combined with a very reduced l

188 ing the photooxidative redox capacity of the valence band of anatase titanium dioxide (TiO(2)).

189 e a similar multiple-valley energy-converged valence band of L and Sigma bands.

190 nates the barriers for transport through the valence band of nanotubes.

191 gies between the orbitals of the QDs and the valence band of PEDOT:PSS.

192 e mobility and unmatched HOMO level with the valence band of perovskite film.

193 cence indicates that hole injection from the valence band of perovskite into the HOMO of triazatruxen

194 l to study the Pt d-band contribution to the valence band of Pt-based bimetallic.

195 om of the conduction band and the top of the valence band of the material are distributed on two oppo

196 ectron transfer between the oligomer and the valence band of the semiconducting SWNTs.

197 hese orbitals are critically involved in the valence band of these materials, such that modulation of

198 cal transitions between O 2p orbitals in the valence band of TiO2 and C 2p orbitals in the conduction

199 creased electron density of states above the valence band of TiO2, which explains the red-shifted lig

200 f the moire minibands that are formed in the valence bands of -valley homobilayers by a small relativ

201 e find spin splitting in both conduction and valence bands of [NH(2)NH(3)]Co(HCOO)(3) induced by spin

202 or the critically important spin-orbit split valence bands of monolayer MoS2.

203 SWNT doping based on electron transfer from valence bands of nanotubes to unoccupied levels of SPEEK

204 s in higher Seebeck coefficients for the two valence bands of PbTe(1-y)Se(y).

205 he bandgap and create convergence of the two valence bands of PbTe, greatly boosting the power factor

206 theory, we establish how the p-derived bulk valence bands of semiconducting 1T-HfSe(2) possess a loc

207 ramagnetic Cu(2+) dopants and the conduction/valence bands of the host semiconductor--but also show a

208 first-principles calculations show that the valence bands of these are dominated by the N (2p) state

209 They act differently on the conduction and valence bands of WS(2) compared to WSe(2).

210 shell and allows a direct measurement of the valence band offset for nanowires of various shell compo

211 Moreover, a valence band offset of 0.94 eV is obtained from density

212 The smallest valence band offset of about 0.13 eV at 0 K was found be

213 pe-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction ba

214 nsfer from SiC to WSe2, where a reduction of valence band offset was observed.

215 The thin-film gallium oxide valence band offset with respect to the SiO[Formula: see

216 es and a technique to directly measure their valence band offset.

217 agnitudes of the band bending as well as the valence band offsets.

218 er, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band.

219 olymer chain and localization of the highest valence band orbitals, the correlation is moderate and e

220 delays between sp- and d-band states in the valence band photoemission from tungsten and investigate

221 chetypal CrMnFeCoNi alloy using resonant and valence band photoemission spectroscopy, electrical resi

222 -ray absorption near-edge structure (XANES), valence-band photoemission spectroscopy (VB-PES), X-ray

223 e conduction-band potential and lowering the valence-band potential at a ratio of 0.68:0.32.

224 d by the contribution of multiple electronic valence bands present in SnSe.

225 conduction band and the inorganic-ion-based valence band provide an unusual electronic platform with

226 w the contribution of the Tl(+) 6s(2) in the valence band region.

227 ia, e.g., solar radiation and coupled to the valence band reservoir state beta via optical phonons.

228 The Sm L(3)-edge valence band resonant inelastic X-ray scattering (VB-RIX

229 rs on the polarization in the conduction and valence bands, separately.

230 ctral intensity on replicas of the hole-like valence bands, shifted by a wavevector of q, which appea

231 The core-to-valence-band signal directly maps the photoexcited hole

232 lated X-ray photoelectron spectroscopy (XPS) valence band spectra using variable excitation energies

233 ed by X-ray photoelectron spectroscopy (XPS) valence band spectroscopy and X-ray absorption near edge

234 he direct band gap ([Formula: see text]) and valence band spin-orbit splitting energy (Delta(SO)).

235 ver, HOIPs exhibiting significant conduction/valence band splitting are still relatively rare, given

236 his degeneracy is incompletely lifted in the valence band, spreading the hole population among severa

237 nce band edge and vacuum energy, including a valence band state, a surface defect state pinning the F

238 ond time scales by timing photoemission from valence band states against that from core states.

239 between localized Se states and the extended valence band states of the host ZnO matrix.

240 nsfer between localized surface and extended valence-band states leads to a decrease of the surface s

241 considered core (atomic like) states and the valence-band states.

242 ved results provide a probe for studying the valence band structure and transport properties of wide-

243 e chemical nature of the ligand controls the valence band structure of AuNPs.

244 ent but complementary roles in modifying the valence band structure of SnTe.

245 ent but complementary roles in modifying the valence band structure of SnTe.

246 X-ray photoelectron spectroscopy (XPS) and valence band studies were also used for the first time o

247 created by the indium impurities inside the valence band, supported by the first-principles simulati

248 terized by the abrupt spectral broadening of valence bands, taken by angle-resolved photoemission, at

249 e higher density of electronic states in the valence band than in the conduction band.

250 mainly by a stronger destabilization of the valence band than the conduction band via donor-type sub

251 (3) introduce midgap energy states above the valence band that facilitate electronic excitations lead

252 es in minium leads to an upward shift of the valence band that reduces the band gap.

253 )AgInCl(6) to an intraband transition in the valence band that tracks the initial 70 fs hot-hole cool

254 reveal energy-gain and -loss Floquet replica valence bands that appear instantaneously in concert wit

255 d spin-valley degenerate flat conduction and valence bands-that is, at moire band filling factors nu

256 ads to an add-on shoulder on the edge of the valence band, the localized N 2p levels above the valenc

257 racy (12 or more at high temperature) of the valence band, the n-type versions are limited to a valle

258 gest that single step hole transfer from the valence band to ferrocene is in the Marcus inverted regi

259 the band gap, electrons are excited from the valence band to the conduction band to initialize the re

260 nters in diamond, we pump electrons from the valence band to the conduction band.

261 positioned in proximity to the edge of GaAs valence band, to the sequence of a peptide that binds to

262 ltrafast conversion of excitons in WSe(2) to valence band transitions in graphene.

263 d-dominated network and high density of near-valence band trap states in amorphous GeS.

264 energies) and lessens the impact of the near valence band trap states, with ambipolar mobilities impr

265 e electronic structure of the conduction and valence bands, undercoordinated ions can only form local

266 tions of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LC

267 tronic structure, which has a sharp and deep valence band valley, and, importantly, located at the Ga

268 ective probing of the effect of holes in the valence band (VB -> Ce(4+) 4f) and electrons in the cond

269 only results in a modest realignment of the valence band (VB) and conduction band (CB) energies.

270 Valence band (VB) changes and hence electronic structure

271 d energetics of the conduction band (CB) and valence band (VB) for films of zinc stannate (Zn(2)SnO(4

272 ibute to an increase in the concentration of valence band (VB) holes combined with conduction band (C

273 -split H(4) and H(5) and the degenerate H(6) valence bands (VB) and the lowest degenerate H(6) conduc

274 entum dispersion relationship reflecting the valence band where the partner hole remains, rather than

275 ap semiconductor features a weakly dispersed valence band, which is shaped like an inverted Mexican h

276 ised, non-bonding S p character of the upper valence band, which leads to a high density of electroni

277 conduction band as compared with that in the valence band, which leads to higher mobility of electron

278 ction of resonance states and convergence of valence bands, which have been confirmed by first-princi

279 of an energy gap between its conduction and valence bands, which makes it difficult to achieve low p

280 (H(v-N)) introduces a defect state into the valence band, while the state contributed by H(v) at the

281 But semiconductors also have a valence band with strong optical transitions to the cond

282 the observed linear dispersed feature in the valence band, with a Fermi velocity of comparable to tha

283 is investigated via diffuse reflectance and valence band X-ray photoelectron spectroscopy.