ライフサイエンスコーパス: wafer

1 igned for planar, rigid substrates (e.g., Si wafers).

2 on and collection of hundreds of sections on wafer.

3 ectors, and bipolar transistors, on the same wafer.

4 as to have crack-free and low-bow (<50 mum) wafer.

5 nm nanowires distant by 28 nm across 6-inch wafer.

6 um is based on a five-core heterogeneous QCL wafer.

7 s were utilized, a glass slide and a silicon wafer.

8 own on semiconducting single crystal silicon wafer.

9 id molecules from a fingerprint on a silicon wafer.

10 thin film across a two-inch c-plane sapphire wafer.

11 nogaps in a metal film over an entire 4-inch wafer.

12 rs) properties is fabricated on a 6" silicon wafer.

13 than measured on a single crystal reference wafer.

14 A, and pack 150,000 such devices on a 4-inch wafer.

15 etched arrays of pyramidal pits in a silicon wafer.

16 ble fabrication of microcolumns in a silicon wafer.

17 arrange a 3 m long column on a 4 in. silicon wafer.

18 roduce over one million robots per four-inch wafer.

19 er due to higher mismatch with the substrate wafer.

20 diamond coated tip on a P-type or N-type Si wafers.

21 on is lost as kerf during slicing to produce wafers.

22 with advanced microelectronic fabrication on wafers.

23 Ox1 and H2 O2 (aq) as Ox2 with Si powder and wafers.

24 deviation of less than 7 mum over two 2-inch wafers.

25 erved in electrochemical measurements on MCT wafers.

26 d for cadmium zinc telluride (CdZnTe or CZT) wafers.

27 ion from initiators immobilized on Si/SiO(2) wafers.

28 sential process to manufacture semiconductor wafers.

29 ce plane curvature (LPC) for 150 mm diameter wafers.

30 oncentration throughout the depth of the GaN wafers.

31 he growth of random SWNT networks on silicon wafers.

32 l rigid substrates such as glass and silicon wafers.

33 sing post treatment of off-the-shelf silicon wafers.

34 ating an oxygen activity gradient across the wafer, a continuous valence state library is established

35 und that, with a Si(100)-hydrogen terminated wafer, a Si-ethoxy (Si-OC2H5) surface intermediate forms

36 2 NPA is synthesized in-situ on a 4-inch MHP wafer, able to produce thousands of gas sensing units in

37 nd 4.74 nm are achieved, respectively on MCT wafers after CMP.

38 , and asymmetric Ag-Au NPs-decorated silicon wafers (Ag-Au NPs@Si)).

39 of 15 days, the group that received the TMZ wafer alone had a median survival of 19 days, and the gr

40 active ion etching of a silicon-on-insulator wafer and bonded to a polydimethylsiloxane microfluidic

41 ations that exceed the scope of conventional wafer and circuit board technologies due to their unique

42 cluding compatibility with MEMS processes on wafer and easy replication.

43 ator hosts were fabricated on a fused-silica wafer and filled with 3,3'-Diethyloxacarbocyanine iodide

44 tice PC Bragg laser fabricated from the same wafer and find that their performances are comparable.

45 s were prepared through spin coating onto Si wafers and consisted of combinations of polystyrene (PS)

46 ules) on various substrates (such as silicon wafers and glass) by solution-processing is reported.

47 ubstrates, in particular crystalline silicon wafers and holey carbon films.

48 ic compositions, were synthesized on silicon wafers and on catalytic supports by a ligand-free, solid

49 ase study, the extract was incorporated into wafers and the changes on the nutritional profile, free

50 films were covalently immobilized on silicon wafers and were treated with protein conjugated on FSNPs

51 gle chip, have channels on both sides of the wafer, and at the same time minimize debris generation a

52 factors, including polymer spheres, silicon wafers, and fibers.

53 -abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water.

54 embled in microwells on a pyrolytic graphite wafer are housed in dual microfluidic chambers.

55 Finally, the polished MCT wafers are cleaned and dried by deionized water and comp

56 cleaved from commercially available silicon wafers are low-cost monolithic monocrystalline materials

57 Secondly, the MCT wafers are polished using the developed CMP slurry.

58 silicon nanocrystals (Cl-SiNCs) and silicon wafers as well as molecular chlorosilanes, were explored

59 les (NPs), obtained via anodic etching of Si wafers, as a basis for undecylenic acid (UDA)- or acryli

60 he device is first fabricated on a planar Si wafer at the microscale and then transferred to transpar

61 ed scratching is carried out on silicon (Si) wafers at nanoscale depths of cut to investigate the fun

62 raphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of 1400 degrees

63 The wafer-based first-generation photovoltaic devices have b

64 ed light and multiple reflections within the wafer-based IRE.

65 for the further development of low-cost, Si wafer-based IREs for electrochemical ATR-SEIRAS applicat

66 ace recombination and Auger recombination in wafer-based nanostructured silicon solar cells.

67 rend in increasing the cost-effectiveness of wafer-based solar cells.

68 jected onto the rim of the TiO2-coated glass wafer, before the entire wafer is exposed to UV irradiat

69 light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent

70 with semiconductors by using methods such as wafer bonding or molecular beam epitaxy, cost-effective

71 tion advanced lithography or well-controlled wafer bonding techniques to define their critical dimens

72 g compared to the pulsed laser deposition or wafer bonding used in the fabrication of NRPS devices.

73 CdTe by constructing grain boundaries using wafer bonding.

74 use changes in the nutritional components of wafers but added colorant and antioxidant properties.

75 photocurrent density of a commercial silicon wafer by photoelectrochemical measurements and the highe

76 ushes were grown from the surface of silicon wafers by atom-transfer radical polymerization.

77 These results demonstrate how virgin NPSi wafer can serve as Cu(2+) sensor.

78 cal etching of highly B-doped p-type silicon wafers can be prepared with tubular pores imbedded in a

79 , we demonstrate that NiPd-NG-Si (Si=silicon wafer) can function as a catalyst and show maximum NiPd

80 achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

81 A photocathode consisting of a n(+)p-Si wafer coated with ultrathin Al(2)O(3) and AgP(2) NCs ach

82 llenges is the large contribution of silicon wafer cost to the overall module cost.

83 TMZ delivered via polymer wafer could be used as a complementary treatment with or

84 (EDTA) in DMSO exerts superior control over wafer coverage and film thickness, and the results demon

85 Here we demonstrate that a piece of silicon wafer cut by a dicing machine or cleaved manually can be

86 Thin, micromachined Si wafers, designed as internal reflection elements (IREs)

87 were either untreated or treated with blank wafer died within 11 days while the median survival for

88 , Deltad/d, was highest for the lowest doped wafer due to higher mismatch with the substrate wafer.

89 -yield growth of thousands of bicrystals per wafer, each containing a grain boundary with a unique <1

90 Samples collected at two silicon wafer fabrication facilities ranged from 10.0 to 9120 pp

91 The Si-tip wafers feature a rectangular array of nanometer sized Si

92 ilms on a lithographically patterned silicon wafer, followed by complete removal of the silicon subst

93 epoxy are discussed to preserve the silicon wafer for future use.

94 nstrate the potential of this newly designed wafer for treating GBM.

95 ons, ranging from the fabrication of silicon wafers for microelectronics to the determination of prot

96 collection of ultrathin sections on silicon wafers for post-embedding staining and volumetric correl

97 ring the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips a

98 materials are required, these include, e.g., wafers from semiconductor industry or studies on space w

99 In addition to showing full wafer gallium arsenide thin film transfer onto both rigi

100 nanoparticles (H-SiNPs), and planar Si(111) wafers (H-Si(111)), we demonstrate that among different

101 The group that received the BCNU alone wafer had a median survival of 15 days, the group that r

102 ays, and the group treated with the BCNU-TMZ wafer had a median survival of 28 days with 25% of the a

103 al germanium (Ge) thin films on silicon (Si) wafers has been achieved over large areas with aqueous f

104 lished that the CMC/ALG binary blend polymer wafers have the potential to improve the sublingual deli

105 precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) proces

106 l microfluidics using water on doped silicon wafers in air, with only +/-2.5 volts of driving voltage

107 tch-stop layer to replace the use of carrier wafers in Deep Reactive Ion Etching (DRIE).

108 of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm(-1) (0.06-21 THz) spectral region

109 The use of a crystal (the Si wafer) in a disposable manner enables simultaneous prepa

110 ing dislocations in the top 6 microns of the wafer increase after epitaxial layer growth.

111 l layer growth, the LPC variation across the wafer increases by a factor of 2, irrespective of doping

112 tocurrent response of a commercial p-type Si wafer, indicating potential use in photovoltaic cells.

113 he passivating process during the CMP of CZT wafers, indicating by the lowest passivation current den

114 tion enhancement with the benefit of thinner wafer induced open circuit voltage increase.

115 he organic (silane layer)-inorganic (silicon wafer) interface.

116 The 500 mum thick wafer IREs with groove angles of 35 degrees are signific

117 es on demineralized and deproteinized dentin wafer is a powerful tool to determine the functional rol

118 The density of surface states of the Si wafer is changed by introducing different densities of d

119 rived from an anisotropically etched silicon wafer is discussed.

120 e TiO2-coated glass wafer, before the entire wafer is exposed to UV irradiation.

121 Raman maps show that the 2'' wafer is relaxed and uniform.

122 non-birefringent thermal oxide on a silicon wafer; it was followed by lithographic fabrication of a

123 e surface mount chip components, such as the wafer level chip scale packages, chip resistors, and lig

124 ess of rGO based field-effect transistors on wafer level.

125 represents a versatile approach for in-situ wafer-level fabrication of high-performance micro/nano g

126 We present here a strategy of in-situ wafer-level fabrication of the high-performance micro/na

127 The microsystem fabrication on a wafer-level is based on a polyimide substrate and includ

128 micro-objective lens module, composed of two wafer-level microlens arrays, is proposed to generate a

129 By introducing colloidal crystal template, a wafer-level ordered homogenous SnO2 NPA is synthesized i

130 H-SiCOI) mechanical resonators fabricated at wafer-level, and reports on ultra-high quality-factors (

131 r (SOI) substrates can be integrated using a wafer-level-packaging process and achieve higher power d

132 ference rejection scheme are integrated on a wafer-level.

133 the analysis are co-entrapped on paper in a "wafer"-like bilayer film of polyelectrolytes (Poly (ally

134 clude liposomal and polymeric nanoparticles, wafers, microchips, microparticle-based nanoplatforms an

135 de (Si3N4)/silicon oxide on a p-type silicon wafer, namely electrolyte-oxide-nitride-oxide-Si (EONOS)

136 Implantation of biodegradable wafers near the brain surgery site to deliver anti-cance

137 The scratching is conducted on a Si wafer of 150 mm diameter with an ultraprecision grinder

138 to investigate the fundamental mechanisms in wafering of solar cells.

139 HIV gp140 protein loaded in wafers of the optimal composition could be stored and tr

140 By HVPE method, overgrowth of thick GaN wafer over 200 mum has been achieved free of residual st

141 ation directly on conventional semiconductor wafer platforms and, therefore, promises to allow the in

142 edestal sensor array fabricated over through-wafer pores compatible with vertical flow fields to incr

143 Methods of surface treatment of the wafer prior to casting and PDMS casting of the epoxy are

144 A high-yield, silicone-on-silicon wafer process is developed to ensure reproducible charac

145 nd this behavior is observed across multiple wafers produced in different growth chambers.

146 anufacturing process for solar grade silicon wafer production, this approach greatly reduces the capi

147 nd systems based upon single-crystal silicon wafers provide convenient, straightforward purification.

148 eutic options includes placing biodegradable wafers releasing BCNU (Gliadel(R)) into the tumor bed at

149 hnology has had clinically, we have prepared wafers releasing Temozolomide (TMZ), an anticancer drug

150 of photolithography and requires no silicon wafer, replica molding, and plasma bonding like microflu

151 droplet generators onto a single 4" Silicon wafer, representing a 100% increase in the total number

152 material systems for commercially available wafers restricts the range of materials that can be grow

153 diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal a

154 Wafer scale (cm(2)) arrays and networks of nanochannels

155 o tri-gate transistors and photodetectors at wafer scale (cm(2)) without postgrowth transfer or align

156 facile and reproducible method of producing wafer scale atomically thin MoS2 layers has been develop

157 pes and tunable compositions are realized on wafer scale for metallic glasses including the marginal

158 mensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fun

159 tercalation method, which is compatible with wafer scale growth of heterostructures.

160 We use electron beam lithography and wafer scale processes to create silicon nanoscale pillar

161 The realization of the wafer scale production of single crystalline graphene fi

162 to fabricate well-ordered patterns over the wafer scale with feature sizes below the resolution of c

163 rystalline VO2 thin films have been grown on wafer scale, exhibiting more than four orders of magnitu

164 et up to be manufacturable and testable on a wafer scale, requiring no cleaved facets or special mirr

165 on of homogenous few layer MoS2 films at the wafer scale, resulting from the novel chelant-in-solutio

166 sity, epi-ready Ge/Si virtual substrate on a wafer scale, using a highly scalable process.

167 ingle-digit nanometre dimensions over 200 mm wafer scale.

168 ed) few-layer graphene can been grown at the wafer scale.

169 -up and top-down fabrication techniques over wafer-scale areas.

170 The high-throughput production and wafer-scale automatable transfer will facilitate the int

171 these films we successfully demonstrate the wafer-scale batch fabrication of high-performance monola

172 icroIDE) electrode-arrays were fabricated on wafer-scale by combining nanoimprint and photolithograph

173 With the breakthrough in growth of wafer-scale continuous 2H-MoTe(2) monolayers on device c

174 Here, layer-by-layer growth of 2 in wafer-scale continuous monolayer 2H-MoTe(2) films on ine

175 ique will lead the field toward synthesis of wafer-scale crystalline perovskites, necessary for the f

176 In combination with improved wafer-scale CVD growth of 2D materials, this approach pr

177 Wafer-scale deposition of mono to few layer TMD films ha

178 stals have been demonstrated; however, their wafer-scale deposition remains a challenge.

179 Toward wafer-scale epitaxial and grain boundary-free film is gr

180 Wafer-scale fabrication of complex nanofluidic systems w

181 These findings are promising towards wafer-scale fabrication of graphene photodetectors appro

182 Wafer-scale fabrication of high-performance uniform orga

183 Here, we demonstrate the wafer-scale fabrication of highly reflective and conduct

184 In this way, the foundry-based wafer-scale fabrication technology for silicon photonics

185 angle color reflection, and is applicable to wafer-scale fabrication using conventional thin film tec

186 The flexible nanofluidic structure design, wafer-scale fabrication, single-digit nanometre channels

187 port the preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide (Mo

188 bstrates (Ni(C)/(B, N)-source/Ni) in vacuum, wafer-scale graphene/h-BN films can be directly formed o

189 realization in commercial devices demands a wafer-scale growth approach for high-quality transition

190 Wafer-scale heterostructures consisting of single-layer/

191 ser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane tra

192 imensional (2D) porphyrin polymer films with wafer-scale homogeneity in the ultimate limit of monolay

193 TriSilix can be produced at wafer-scale in a standard laboratory (37 chips of 10 x 1

194 n this work, we propose a novel approach for wafer-scale integration of 2D materials on CMOS photonic

195 the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based e

196 ance field-effect transistor (FET) arrays in wafer-scale is demonstrated, and the FETs show remarkabl

197 e laser and has potential for cost-effective wafer-scale manufacturing.

198 These devices employ wafer-scale mixed-dimensional van der Waals heterojuncti

199 ghput growth, completed in 12 min, of 6-inch wafer-scale monolayer MoS(2) and WS(2) is reported, whic

200 eratures for fabrication of high-performance wafer-scale p-type field-effect transistors.

201 This DNA nanolithography enables wafer-scale patterning of two-dimensional electronic mat

202 We developed OECT devices in a wafer-scale process and used them as electrophysiologica

203 We describe a wafer-scale process for manufacturing strongly adhering

204 method offers great commercial potential for wafer-scale processes.

205 tion techniques is an exciting route towards wafer-scale quantum technologies.

206 Here we report the generation of wafer-scale semiconductor films with a very high level o

207 This reliable approach to producing wafer-scale single-crystal hBN paves the way to future 2

208 Wafer-scale single-crystalline graphene monolayers are h

209 ay also prove effective for the synthesis of wafer-scale single-crystalline monolayers of other two-d

210 t photovoltaics use high-purity, large-area, wafer-scale single-crystalline semiconductors grown by s

211 e the application of conjugated polymers for wafer-scale sophisticated electronics.

212 ut external heating, are fabricated on 4 in. wafer-scale substrates.

213 a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds

214 n film depositions, and is of unprecedented (wafer-scale) extent.

215 rarily structured substrates and can produce wafer-scale, diffusive, angle-independent, and flexible

216 ly fabricate n-type conjugated polymers with wafer-scale, high uniformity, low contact resistance, an

217 electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs.

218 Herein, the first demonstration of 4 in wafer-scale, uniform, and high-performance n-type polyme

219 search efforts and it can now be produced in wafer-scale.

220 andom nanostructures in amorphous silicon at wafer scales that achieved over 160% light absorption en

221 The LPC component has higher influence on wafer shape change, which can reduce device yields.

222 inally, we show that compacting HKUST-1 into wafer shapes partially collapses the framework, decreasi

223 mm(2) area and fabricated on 200 mm silicon wafers, showing the unprecedented graphene circuit compl

224 for both the n-type emitter and p-type bulk wafer Si of an industrially produced aluminum back surfa

225 calculated in the n-type emitter and p-type wafer Si with the results also being consistent with lit

226 gold-capped nanopillars, which showed an in-wafer signal variation of only 11.7%.

227 dvantage of our fabrication method, a 6 inch wafer size heterogeneous surface was prepared.

228 Here, we demonstrate the synthesis of wafer-size atom-thin TMD films with an ultra-high-densit

229 xpensive procedure for epitaxial lift-off of wafer-size flexible and transparent foils of single-crys

230 Wafer-sized single-crystalline Cu (100) surface can be r

231 thylene glycol based cutting fluid during Si wafer slicing in semiconductor fabrication.

232 rated a relatively low cost approach to turn wafer slicing wastes into much higher value-added materi

233 parameters for active layers in silicon (Si) wafer solar cells are determined from free carrier optic

234 t-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the co

235 g in a transmission geometry: semiconductors wafers, specimens on opaque and birefringent substrates,

236 sphorus nanowires (>1 mm) selectively onto a wafer substrate from red phosphorus powder and a thin fi

237 ur deposition method is scalable to a 100 mm wafer substrate, with around 50% of the wafer surface co

238 erfections at macroscopic scales across full wafer substrates.

239 peratures we observe etching of the sapphire wafer surface by the flux from the atomic carbon source,

240 0 mm wafer substrate, with around 50% of the wafer surface covered by aligned crystals.

241 transforming a circuit fabricated on a flat wafer surface to an arbitrary shape without loss of perf

242 molecular weights and compositions across a wafer surface, with complex geometries and diverse featu

243 m atom beams traveling parallel to a silicon wafer surface.

244 s uniformly transferred onto 2" GaN or 4" Si wafer surfaces as a release buffer layer.

245 methacrylate) (PGMA) polymer brushes and Si wafer surfaces were activated locally using atomic force

246 is a z-cut single crystalline LiNbO(3) (LN) wafer that has strong Pockels effect, thus enabling the

247 his approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG mate

248 a simple biopolymer platform of mucoadhesive wafers that enables effective sublingual delivery and pr

249 When performed on a mesoporous Si wafer, the perfluoro reagent yields a superhydrophobic s

250 Reducing the silicon wafer thickness at a minimized efficiency loss represent

251 erly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only arou

252 thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency

253 The sensor was fabricated on a silicon wafer through photolithography to define the sensor geom

254 of cylindrical micellar brushes on a silicon wafer through seeded growth of crystallizable block copo

255 with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including pape

256 -doped CdTe using high-purity single crystal wafers to investigate the mechanisms that limit p-type d

257 ng nanopore membranes on insulating sapphire wafers to promote low-noise nanopore sensing.

258 We used photolithography on silicon wafers to synthesize microarrays (Intel arrays) that con

259 ividual carbon nanotubes (CNTs) on a silicon wafer using a conventional optical microscope.

260 rotrap array etched from a silica-on-silicon wafer using conventional semiconductor fabrication techn

261 First, we modified polycarbonate wafers using an electrophilic aromatic substitution reac

262 osensors were fabricated on oxidized silicon wafers using chemical vapor deposition grown carbon nano

263 lide, 330,000 peptides per assay) on silicon wafers using equipment common to semiconductor manufactu

264 r-water interface and transferred to silicon wafers using Langmuir-Schaefer deposition.

265 cks of 32 x 32 nanowire arrays across 6-inch wafer, using electron beam lithography at 100 kV and pol

266 rs of different compositions, on the same Si wafer, using only a single deposition process and a sing

267 15 um) TSVs to be fabricated on a single 4" wafer, using only conventional semiconductor fabrication

268 diamond films grown on surface-passivated Si wafers via chemical vapor deposition (CVD) and microstru

269 the same time minimize debris generation and wafer warping to enable permanent bonding of the device

270 coated glass target and carbon-coated silica wafer was characterized with atomic force microscopy.

271 devices with four-color emission on the same wafer were demonstrated.

272 Wafers were also made with a co-loading of TMZ and BCNU.

273 The wafers were composed of a series of binary polymer blend

274 These wafers were fabricated by complementary metal-oxide-semi

275 dies that led to Gliadel(R) the same size of wafers were formulated with TMZ.

276 Wafers were loaded with 50% w/w TMZ in poly(lactic acid-

277 crystals prepared from double-sided polished wafers were mounted in the setup.

278 polystyrene (PS) films supported on silicon wafers were obtained at temperatures ranging from room t

279 distortions (LD) in 4H-silicon carbide (SiC) wafers were quantified using synchrotron X-ray rocking c

280 All wafers were tested in vivo by treating an intracranial 9

281 SiO(2) /Si wafer, which exhibits highly uniform in-plane structural

282 cating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2

283 or is fabricated from a silicon-on-insulator wafer with a deliberate curvature to form an arch shape.

284 ative surface functionalization of a silicon wafer with carboxylated alkyltrichlorosilane has been de

285 For this purpose, we coated a round glass wafer with photocatalytically active anatase-phase TiO2

286 s obtained uniformly on the whole surface of wafers with a controlled number of graphene layers.

287 Black silicon (bSi) wafers with a high density of high-aspect ratio nanopill

288 g the surfaces of long bulk-lifetime silicon wafers with Al(2)O(3), the recombination of the photoexc

289 other Bacillus species by incubation on bSi wafers with and without nanopillars.

290 ng the ratio between CMC and ALG resulted in wafers with different microstructure, mechanical propert

291 transferred to polished silicon or germanium wafers with electrostatically assisted high-speed centri

292 On the other hand, wafers with high ALG content were not only mechanically

293 Wafers with high CMC content were highly mucoadhesive to

294 We found that the bSi wafers with nanopillars were indeed very effective in ru

295 However, bSi wafers with or without nanopillars gave no killing or ru

296 lane molecules on naturally oxidized silicon wafers with reference-free total reflection X-ray fluore

297 mesoporous TiO2 films, dip-coated on silicon wafer, with controlled porosity in the range of 15 to 50

298 veral areas of SiGe-on-insulator on a single wafer, with the ability to tune the composition of each

299 d killing the growing bacterial cells, while wafers without nanopillars had no bactericidal effect.

300 growing single-crystal hBN films directly on wafers would contribute to the broad adoption of 2D laye