ライフサイエンスコーパス: wide band

1 n any system of coupled topological flat and wide bands.

2 The ERG was amplified under wide-band (1-1000 Hz) conditions, digitized at 6144 Hz/e

3 The gate-tunable wide-band absorption of graphene makes it suitable for l

4 ons labeled by pre-SMA injections occupied a wide band and were especially concentrated in the VLx an

5 mpatible, on-chip multi-frequency, low-loss, wide-band, and compact filters for cellular radios opera

6 icrowave scattering perturbations from ultra wide-band antenna arrays to learn dielectric signatures

7 Zone III was composed of radial, 0.1-mm-wide bands arranged in a periodic fashion in the most pe

8 is, using a multistep synthetic procedure, a wide-band capturing, multimodular, C(60)-bisstyrylBODIPY

9 of large transition matrix elements between wide bands, cerium fluorosulfide presents an alternative

10 oposed that, in addition to participating in wide band cochlear sound amplification, prestin may also

11 Wide-band electrical activity (0.1-3000 Hz) was recorded

12 sely, IEDs showed a broad spatial extent and wide-band frequency power.

13 Here, we investigate PbSnS(2), a wide band gap (1.13 eV) compound, as a promising thermoe

14 es to study two broad materials classes: (i) wide band gap AB compounds and (ii) rare earth-main grou

15 Thanks to the inherent wide band gap and high mobility in the 2D plane, covalen

16 uit voltage, the highest reported for a 2 eV wide band gap device.

17 Ge is an alternative n-type dopant for the wide band gap Ga(2)O(3) due to its shallow donor level a

18 s were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to

19 an extensively studied semiconductor with a wide band gap in the near-UV.

20 Ds involves coating the core material with a wide band gap inorganic shell material (type-I CS QD).

21 us, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators.

22 Simulation results indicate that among wide band gap materials 4H-SiC and diamond are two optim

23 -power devices is tied to the development of wide band gap materials with excellent transport propert

24 Optically active defects in wide band gap materials, for instance, are critical cons

25 ng good mobility have been big challenges in wide band gap materials.

26 Both materials are wide band gap n-type semiconductors and they can interac

27 ficantly enhanced for the hybrids containing wide band gap non-emissive ZnCl(4) (2-) .

28 le-atomic-layer organic semiconductor with a wide band gap of 3.41 eV.

29 While the wide band gap of SnO(2) makes it an effective electron t

30 The wide band gap of the organic cation and distinct optical

31 However, the short length and wide band gap of these graphene nanoribbons have prevent

32 However, the relatively wide band gap of TiO2 significantly limits its use under

33 icient and long-term stable p-type doping of wide band gap organic materials, charge-generation junct

34 the water interface with MgO, a prototypical wide band gap oxide whose conduction band edge is close

35 y was introduced in beta-Ga(2)O(3), an ultra-wide band gap oxide, by controlling hydrogen incorporati

36 Gallium oxide (Ga(2)O(3)), one among the wide band gap oxides, exhibit promising oxygen sensing p

37 nd gap semiconducting polymer and a matching wide band gap polymer.

38 light emitting device with a nanostructured, wide band gap semiconductor layer.

39 gy savings associated with the deployment of wide band gap semiconductors are estimated to range from

40 orber for multi-junction device applications.Wide band gap semiconductors are important for the devel

41 as well as the market adoption potential of wide band gap semiconductors in electric vehicles.

42 s derivatives are stable and extremely thin, wide band gap semiconductors that promise to replace con

43 con carbide and gallium nitride, two leading wide band gap semiconductors with significant potential

44 concept for plasmonic photosensitization of wide band gap semiconductors, leading to efficient conve

45 the fact that it is one of the most studied wide band gap semiconductors.

46 tability, electrochemical reversibility, and wide band gap useful for organic light-emitting diodes (

47 on within the visible range derived from its wide band gap value and the presence of charge trapping

48 y and first-principles calculations reveal a wide band gap variation in this material from 0 (bulk) t

49 lphide subjected to biaxial strain can embed wide band gap variations overlapping the visible light s

50 a photocatalyst is unexpected because of its wide band gap.

51 However, the synthesis of wide-band gap (E(g)) QD-in-matrix heterostructures has s

52 lide segregation in organic-inorganic hybrid wide-band gap (WBG) perovskites, which hinders their pra

53 Wide-band gap metal halide perovskites are promising sem

54 However, wide-band gap perovskite solar cells have been fundament

55 We report efficient 1.67-electron volt wide-band gap perovskite top cells using triple-halide a

56 Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-p

57 rs are generated upon light irradiation of a wide-band gap semiconductor which can be applied to sola

58 efined nanocrystal arrays into a matrix of a wide-band gap semiconductor, which preserves optoelectro

59 Spin defects in wide-band gap semiconductors are promising systems for t

60 Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based

61 ed to a wide range of point defects in other wide-band gap semiconductors, paving the way to controll

62 BN) is known as promising 2D material with a wide band-gap (~6 eV).

63 Cuprous halides, characterized by a direct wide band-gap and a good lattice matching with Si, is an

64 doping size-mismatched functional atoms into wide band-gap materials.

65 spectroscopy, we prepared a minimal DQD in a wide band-gap semiconductor matrix.

66 These wide band-gap semiconductor nanowires form natural laser

67 ZnO is a wide band-gap semiconductor with piezoelectric propertie

68 deep-ultraviolet optoelectronic devices and wide-band-gap bipolar electronic devices of the future.

69 rovskite at grain boundaries is converted to wide-band-gap PbWO(4) via an in-situ reaction between Pb

70 The all-PSCs with the wide-band-gap polymer PBDB-T as donor and PZ1 as accepto

71 The experiments revealed that the underlying wide-band-gap semiconductor has a large influence on the

72 which is a prototypical nuclear ceramic and wide-band-gap semiconductor material.

73 TiO2 is a wide-band-gap semiconductor, and it is an important mate

74 u(2)AgBiI(6): a stable, inorganic, lead-free wide-band-gap semiconductor, well suited for use in lead

75 ion to both p- and n-type doping problems in wide-band-gap semiconductors and offers an unconventiona

76 Impurity-based p-type doping in wide-band-gap semiconductors is inefficient at room temp

77 terface and suggests that GaN is a promising wide-band-gap support material for photocatalysis and el

78 , n is the number of octahedral sheets) with wide band gaps (>1.7 eV) impeding charge flow.

79 were shown to be p-type semiconductors with wide band gaps and able to support multiple stable catio

80 challenges such as synthesis complexity and wide band gaps have hindered optoelectronic performance

81 Magnetic oxide semiconductors with wide band gaps have promising spintronic applications, e

82 otochemistry of Earth-abundant minerals with wide band gaps would have potentially played a critical

83 ver they often suffer from short lengths and wide band gaps.

84 h a single type of linker exhibit relatively wide band gaps; however, by mixing linkers of a low-lyin

85 Recent advances in wide-band haptic actuator technology have made new audio

86 s evaluated with conventional gray-scale and wide-band harmonic US at baseline and again during intra

87 ly extensive stimuli, results from increased wide-band input attributable to activation of larger pop

88 ork.The system design of impulse radio Ultra-Wide Band (IR-UWB) through-wall radar (TWR) is devised,

89 t of broadband illumination sources (such as wide-band light emitting diodes or even sunlight) to imp

90 ssion from the blend that occurs in a 300-nm-wide band located at the interface between the different

91 A 10 mum wide band microelectrode composed of PEDOT:Tosylate, an

92 nsory and behavioral variables directly from wide-band neural data.

93 In Experiment 1 a 180 degrees SSwap of wide band noise (WBN) was compared with WBN Onset and Of

94 Exposure to wide-band noise at a level of 120 dB for 3 hours per day

95 the physiological responses of AVCN cells to wide-band noise were analyzed using the simulated respon

96 Using wide-band observations with two telescopes, we report po

97 es are no longer quasiparticles but occupy a wide band of energy.

98 onator, acoustic vortices are generated in a wide band of frequencies around 4 GHz with topological c

99 Light trapping across a wide band of frequencies is important for applications s

100 tivity and low side lobe levels for an ultra-wide band of frequencies, spanning over three octaves.

101 o swiftly modulate gamma oscillations over a wide band of frequencies.

102 igh-speed processing units, operating over a wide band of microwave frequencies.

103 s were mechanically created, removing a 3 mm wide band of the cell layer across the diameter of the w

104 s were mechanically created, removing a 3 mm wide band of the cell layer.

105 Terahertz radiation encompasses a wide band of the electromagnetic spectrum, spanning from

106 to a critical value, a desert forms across a wide band of the planet.

107 is effect, which was observed in a 50-microm wide band of tissue surrounding each pathology, was exer

108 AG laser allows the activation of 1.7-micron-wide bands of the electrode surface (available for facil

109 of the delta-NH(3)(+) of Orn(+) occurs over wide bands of up to 5 pH units, a feature of polyelectro

110 ground Neutrino Experiment (DUNE) utilizes a wide-band on-axis tunable muon-(anti)neutrino beam with

111 tory approach, we studied gamma ERS in 10-Hz-wide bands (overlapping by 5 Hz) ranging from 30 to 100

112 Graphene has the potential for high-speed, wide-band photodetection, but only with very low externa

113 h to intelligent diagnostics using microwave wide-band scattering information thus circumventing conv

114 farmed calves using location data from ultra-wide band sensors and to investigate factors associated

115 The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz.

116 oss is identified (even mild or unilateral), wide-band sound therapy, and counselling.

117 ry, (b) low coherence-time pumping and ultra-wide-band spectral detection, and (c) focused pumping an

118 onlinear processes to signal the presence of wide-band spectral features.

119 enna's key characteristics are compact size, wide-band sub-GHz operation, dual sense CP, polarization

120 are formed in such coupled topological flat-wide band systems and, equally important, how they are d

121 resent experiment demonstrates an efficient, wide-band, thermal detection scheme of microwave photons

122 s but have not fully succeeded in developing wide-band, thin metamaterial-based absorbers suitable fo

123 We show that a wide-band tomography of single-particle distributions is

124 n ultrasonic imaging requires high frequency wide band ultrasonic transducers, which produce short pu

125 ses the egg as a shallow, roughly 20 degrees-wide band which vanishes at the antipode some minutes la

126 odified consumer camera, was used to capture wide-band wide-field-of-view fluorescence images during