ライフサイエンスコーパス: Bi

1 Bi stabilizes the Ti-polyhedra, which are synergisticall

2 Bi(0).(5)Na(0).(5)TiO(3)-based solid solution is among t

3 Bi- and multivariable logistic regression, Kaplan-Meier

4 Bi- and tri-exponential models for ultrasensitive assay

5 Bi- and trilayer graphene have attracted intensive inter

6 Bi-allelic mutations in ARSs typically cause severe, ear

7 Bi-frontal anodal stimulation significantly decreased TS

8 Bi-frontal cathodal stimulation did not significantly in

9 Bi-institutional (Mbarara Regional Referral Hospital and

10 Bi-level positive airway pressure or adaptive servo-vent

11 Bi-molecular fluorescence complementation and co-immunop

12 Bi-phase was constructed from ionic liquid: butyl-methyl

13 Bi-phasic or diauxic growth is often observed when micro

14 1,1'-Bi-2-naphthol in combination with ZnEt2, Ti(O(i)Pr)4, an

15 ) is worse than with the QTA (0.16 ng mL(-1) Bi).

16 ve field in the six quintuple-layer (Cr(0.12)Bi(0.26)Sb(0.62))2Te3 film, and demonstrate the metal-to

17 esentative ferroelectrics, BaTiO3 and Na(1/2)Bi(1/2)TiO3, and dielectric SrTiO3.

18 For Na(1/2)Bi(1/2)TiO3, the results reveal an abrupt field-induced

19 nexpensive triflate salts of Sn(2+), Pb(2+), Bi(3+), and Sb(3+) can be used as precursors for the ele

20 eavy ions such as hydrogen-like bismuth (209)Bi(82+) experience electromagnetic fields that are a mil

21 hydrogen-like and lithium-like bismuth (209)Bi(82+,80+) with a precision that is improved by more th

22 )Sc, (166)Ho, (161)Tb, (149)Tb, (212)Pb/(212)Bi, (225)Ac, and (213)Bi-have been produced and evaluate

23 (213)Bi-IMP288 cleared rapidly from the circulation; at 30 mi

24 g.(47)Sc, (114m)In, (177)Lu, (90)Y, (212/213)Bi, (212)Pb, (225)Ac, (186/188)Re).

25 of [(213)Bi-DOTA,Tyr(3)]octreotate and (213)Bi-diethylene triamine pentaacetic acid (DTPA) in mouse

26 (149)Tb, (212)Pb/(212)Bi, (225)Ac, and (213)Bi-have been produced and evaluated (pre)clinically for

27 r the first time that PRIT with TF2 and (213)Bi-IMP288 is feasible and at least as effective as (177)

28 ng alpha-emitting radionuclides such as (213)Bi.

29 We assessed (213)Bi imaging capabilities of the Versatile Emission Comput

30 d (90)Y and the alpha-emitters (211)At, (213)Bi, and (212)Pb were compared.

31 or the alpha-particle emitters (211)At, (213)Bi, and (225)Ac.

32 s and the 440 keV gamma-rays emitted by (213)Bi could be imaged.

33 bined alpha-, gamma-, and x-ray emitter (213)Bi (half-life, 46 min) is promising for radionuclide the

34 It is feasible to image (213)Bi down to a 0.75-mm resolution using a SPECT system equ

35 Mice receiving 17 MBq (213)Bi-IMP288 showed significant weight loss, resulting in a

36 dneys of mice treated with 17 or 12 MBq (213)Bi-IMP288 showed signs of tubular damage, indicating nep

37 d with phosphate-buffered saline, 6 MBq (213)Bi-IMP288, 12 MBq (213)Bi-IMP288, and 60 MBq (177)Lu-IMP

38 ed saline, 6 MBq (213)Bi-IMP288, 12 MBq (213)Bi-IMP288, and 60 MBq (177)Lu-IMP288 was 22, 31, 45, and

39 properties and therapeutic efficacy of (213)Bi and (177)Lu for PRIT of CEA-expressing xenografts, us

40 SPECT imaging of (213)Bi is challenging, because most emitted photons have a m

41 in frames after injection of 7.4 MBq of (213)Bi-DTPA showed renal uptake and urinary clearance, visua

42 Finally, the effect of (213)Bi-IMP288 (6, 12, or 17 MBq) and (177)Lu-IMP288 (60 MBq)

43 The in vitro binding characteristics of (213)Bi-IMP288 (dissociation constant, 0.45 +/- 0.20 nM) to T

44 Tumor targeting of (213)Bi-IMP288 and (177)Lu-IMP288 was studied in mice bearing

45 In vivo accumulation of (213)Bi-IMP288 in LS174T tumors was observed as early as 15 m

46 Mice treated with a single dose of (213)Bi-IMP288 or (177)Lu-IMP288 showed significant inhibitio

47 The biodistribution of (213)Bi-IMP288 was comparable to that of (177)Lu-IMP288.

48 The in vitro binding characteristics of (213)Bi-IMP288 were compared with those of (177)Lu-IMP288.

49 Additionally, imaging of [(213)Bi-DOTA,Tyr(3)]octreotate and (213)Bi-diethylene triamin

50 r-bearing mouse injected with 3 MBq of [(213)Bi-DOTA,Tyr(3)]octreotate, tumor uptake could be visuali

51 ms-C paradigm, but was suppressed for C-25ms-Bi (by 31%); it was unchanged for Bi only and C only.

52 i-10ms-C); click 25 ms before biceps (C-25ms-Bi); click alone (C only); and biceps alone (Bi only).

53 ctrons generated by the two-dimensional (2D) Bi square net in these materials are normally massive du

54 3+), Al(3+), Ba(2+), Co(2+), Cu(2+), Ni(3+), Bi(3+), and Sn(2+)) except Fe(2+), which was found to in

55 A 27% Ni-73% Bi alloy achieved 95% methane conversion at 1065 degrees

56 A Bi(OTf)3-catalyzed ring-opening cyclization of (hetero)a

57 We first construct a Bi-relational graph (Birg) model comprised of both prote

58 strating rectification and photocurrent in a Bi-implanted GaLaSO device.

59 als, DFT calculations were used and showed a Bi 6s orbital polarized towards Li which could be indica

60 ty studies showed that FadD33 proceeds via a Bi Uni Uni Bi ping-pong mechanism.

61 2O' anti-cristobalite framework, which allow Bi atoms to adopt low-symmetry coordination environments

62 Bi); click alone (C only); and biceps alone (Bi only).

63 order in a nano-patterned array of amorphous Bi islands.

64 exes (Al; 5, Au; 6, Zn; 7, Mg; 8, Sb; 9, and Bi; 10).

65 lbenzaldehydes via Grignard 1,2-addition and Bi(OTf)3-catalyzed intramolecular olefinic cyclization h

66 A tight-binding model consisting of Mn-d and Bi-p states is developed and the parameters are determin

67 Both Ir and Bi have oxidation states that are lower than their nomin

68 s some comprehensive similarity measures and Bi-Random walk (BiRW) algorithm to identify potential no

69 The incorporation of Nd and Bi ions on the A-site and coherent growth with the matri

70 two probes (Pt(4+)/Pb(2+)(AND)-Au NPPOX and Bi(3+)/Hg(2+)(INHIBIT)-Au NPPOX) allow selective detecti

71 e explained by the inter-diffusion of Pb and Bi elements into whole films and even into the top layer

72 Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phas

73 ivity results indicate that Pn = As, Sb, and Bi are semiconductors with band gaps of 0.73 eV, 0.48 eV

74 Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of

75 gen(III) chlorides (ECl3, E = P, As, Sb, and Bi) yielding triaza-pnicta-butene analogues of the type

76 other hydride-forming elements (Sb, Se, and Bi).

77 The electrochemically prepared Sn and Bi catalysts proved to be highly active, selective, and

78 ly approximately 10% as active as the Sn and Bi systems at an applied potential of E = -1.95 V and is

79 d), from molten Field's metal (Bi-In-Sn) and Bi-Sn alloys.

80 2+) features edge-sharing between the Ti and Bi polyhedra, in contrast to the dominant corner-linking

81 , HTS conductors such as REBa2Cu3O(7-x) and (Bi, Pb)2Sr2Ca2Cu3O(10-x) are both made as tapes with a h

82 h is used due to its nontoxic properties, as Bi(III) has been a reagent in medications such as Pepto-

83 s the output; this logic gate is denoted as "Bi(3+)/Hg(2+)(INHIBIT)-Au NPPOX".

84 withB-B identical withO](-) ) and Bi2 B(-) ([Bi=B=Bi](-) ), respectively.

85 nd Bi2 B(-) , containing triple and double B-Bi bonds are presented.

86 rtion of isonitrile carbon occurred at the B-Bi bond in 10 which afforded stable bismuth (boryl)imino

87 produced by laser vaporization of a mixed B/Bi target and characterized by photoelectron spectroscop

88 -B identical withO](-) ) and Bi2 B(-) ([Bi=B=Bi](-) ), respectively.

89 In order to distinguish between Bi- and host-related traps and to identify their possibl

90 iodide anion I2(*-) directly ligated to Bi, [Bi(I2(*-))Ix](n).

91 ture of state-of-the-art Bi2212 and Bi2223 ((Bi,Pb)(2)Sr(2)Ca(2)Cu(3)O(10)), finding that round wire

92 e exist in lead chalcogenides, SnTe, Bi2Te3, Bi and Sb due to the resonant bonding that is common to

93 nterfacing two gapped films-a single bilayer Bi grown on a single quintuple layer Bi(2)Se(3) or Bi(2)

94 mbohedral A7 structure of elemental bismuth (Bi) have been discovered at ambient condition, based on

95 In borate (Bi) and phosphate (Pi) buffers, anions must be displaced

96 and particularly from those containing both Bi and Te.

97 Among the catalysts explored, both Bi(OTf)3 and Fe(OTf)3 were found to be highly active Lew

98 cture around the Fermi level is dominated by Bi-p states which are the primary contributors to the ma

99 Moreover, the rate of CO production by Bi-CMEC ranges from approximately 0.1-0.5 mmol.cm(-2).h(

100 y carbon (GC), bismuth-coated glassy carbon (Bi-GC), and mercury-coated glassy carbon (Hg-GC) electro

101 a bismuth-carbon monoxide evolving catalyst (Bi-CMEC) can be formed under either aqueous or nonaqueou

102 radigms: biceps stimulus 10 ms before click (Bi-10ms-C); click 25 ms before biceps (C-25ms-Bi); click

103 hat of another OER cocatalyst, Co-borate (Co-Bi), in 1 M Na2CO3, reaching 10 mA/cm(2) at an overpoten

104 A systematic transport study of the codoped (Bi,Sb)2 Te3 films with varied Cr/V ratios reveals that m

105 Pi on the OER current density; in contrast, Bi exchange is sufficiently facile such that Bi has an i

106 potential in ferromagnetic thin films of Cr-(Bi,Sb)2Te3 grown on SrTiO3 By optically modulating the c

107 crowave response of a magnetised disk of Cr-(Bi,Sb)2Te3.

108 tate transport to diffusive transport in Crx(Bi,Sb)(2-x)Te3 thin films.

109 rst member of a larger homologous series Cs4[Bi(2n+4)Te(3n+6)] that exhibits unconventional supercond

110 vious work has demonstrated that Sn, Ge, Cu, Bi, and Sb ions could be used as alternative ions in per

111 irst to be structurally identified in the Cu-Bi binary system, is reported.

112 Decreasing the Cu/Bi ratio of the CuBi2O4 photocathodes introduces Cu vaca

113 6 ](4+) in [(UO2 )(O2 )(OH)]24(24-) (denoted Bi@U24 and Pb@U24 ) in pure form and high yields despite

114 One recently described Bi-CoPaM method can analyse expressions of the same set

115 ctivation energies in samples with different Bi contents.

116 rently embedded within the three-dimensional Bi-rich semiconducting framework.

117 C6H2(CHPh2)2-tBu-2,6,4) exists as the dimer [Bi(NON(Ardouble dagger))(S4)]2, with pi*(SOMO)-pi*(SOMO)

118 le metal cathode materials and distinguishes Bi-CMEC as a superior and inexpensive platform for elect

119 Hall effect with the thickness of Cr-doped (Bi,Sb)2 Te3 magnetic topological insulator films is stud

120 of magnetic topological insulator Cr-doped (Bi,Sb)2Te3 (CBST) films grown on SrTiO3 (1 1 1) substrat

121 tic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of ver

122 ic CrSb and ferromagnetic order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phe

123 ous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern con

124 tically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission s

125 ually below 100 mK in either Cr- or V-doped (Bi,Sb)2 Te3 of the two experimentally confirmed QAH mate

126 tal observation of the QAH state in V-doped (Bi,Sb)2Te3 films with the zero-field longitudinal resist

127 ysing the formation of nanostructures during Bi-rich growth, through the vapour-liquid-solid mechanis

128 n reaction of (EE'Bi2)(2-) (E = Ga, Tl, E' = Bi; E = E' = Pb) and [U(C5Me4H)3] or [U(C5Me4H)3Cl] in 1

129 Ex situ plated Bi film electrodes (Bi-FE) have been employed, for the first time, to measur

130 plexes (MX(n), where M = Pb, Cd, In, Zn, Fe, Bi, Sb) have been studied as inorganic capping ligands f

131 the layered compound RbBi11/3Te6, featuring Bi vacancies and a narrow band gap of 0.25(2) eV at room

132 en 0.016 mg L(-1) for Li and 41 mg L(-1) for Bi.

133 are controlled by substitution of Ca(2+) for Bi(3+) cation.

134 s than one, and decreases the efficiency for Bi values larger than one.

135 from sidewalls increases the efficiency for Bi values less than one, and decreases the efficiency fo

136 The detection limit for Bi (1.1 ng mL(-1)) is worse than with the QTA (0.16 ng m

137 all trivalent and effectively substitute for Bi(3+) in the Bi2(Se, Te)3 matrix.

138 e that Cr is preferentially substituting for Bi in the Bi2Se3 host.

139 at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

140 usly with the coherent k-space topology, for Bi(2)Sr(2)CaCu(2)O(8+delta) samples spanning the phase d

141 for C-25ms-Bi (by 31%); it was unchanged for Bi only and C only.

142 Free Bi atoms were also observed in the DBD with nitrogen, hy

143 Free Bi atoms were essentially absent outside the central par

144 olarization, even render depolarization-free Bi(0).(5)Na(0).(5)TiO(3)-based 0-3-type composites.

145 in accord with the fact that almost no free Bi atoms exist beyond the physical boundaries of the DBD

146 ers indicates significant reactivity of free Bi atoms, which is in accord with the fact that almost n

147 oltage gain by vertically stacking graphene, Bi(2)Sr(2)Co(2)O(8) (p-channel), graphene, MoS(2) (n-cha

148 ptionally complicated structure with helical Bi-O rods cross-linked by 1,3,5-benzenetricarboxylate (B

149 dal CsPbBr3 perovskite NCs with heterovalent Bi(3+) ions by hot injection to precisely tune their ban

150 ects, qualitatively consistent with the high Bi: Ir ratio found in the films.

151 S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (~5-11 at.%), incorpora

152 ain boundaries by liquid-phase compaction in Bi(0.5)Sb(1.5)Te3 (bismuth antimony telluride) effective

153 Conversely, anion exchange in Bi is rapid (kassoc = 13.1 +/- 0.4 M(-1) s(-1) at 25 deg

154 duced significant repression of DDR genes in Bi-Tg thyrocytes (P=2.4 x 10(-4)) compared with either P

155 th this, genetic instability was greatest in Bi-Tg thyrocytes with a mean genetic instability (GI) in

156 Although there has been intense interest in Bi-based topological insulators, their behaviour is comp

157 onsistent with the OER activity of Co-OEC in Bi and Pi.

158 t by codoping Cr and V magnetic elements in (Bi,Sb)2 Te3 TI, the temperature of the QAH effect can be

159 We find that incorporating Bi suppresses the formation of GaAs-like electron traps,

160 ransport through a 3D topological insulator (Bi(1.33)Sb(0.67))Se3 nanowire.

161 n-film, ferromagnetic topological insulator (Bi, Sb)2-x V x Te3.

162 The quaternary topological insulator (Bi,Sb)2(Te,Se)3 has demonstrated topological surface sta

163 irst insertion reactions of CO2 and COS into Bi-C bonds are observed with this oxyaryl dianionic liga

164 ap ( 20 meV) equal to half that of intrinsic Bi-2212 ( 40 meV).

165 sence of platinum (Pt(4+)) and bismuth ions (Bi(3+)) are presented.

166 bilayer Bi grown on a single quintuple layer Bi(2)Se(3) or Bi(2)Te(3).

167 ) and olive oils (W, Fe, Mg, Mn, Ca, Ba, Li, Bi), which supports their utility in traceability.

168 gion similar to where the supercooled liquid Bi is observed.

169 sition, accompanied by ordering of the local Bi displacements and reorientation of the nanoscale ferr

170 inarisation of consensus partition matrices (Bi-CoPaM) method can combine clustering results from mul

171 Mechanistically, Bi(OTf)3 serves as a stable and easy to handle precursor

172 ' = chemisorbed), from molten Field's metal (Bi-In-Sn) and Bi-Sn alloys.

173 thyrocytes from a bitransgenic murine model (Bi-Tg) of thyroid-specific PBF and PTTG overexpression.

174 ismuth-based metal-organic framework (MOF), [Bi(BTC)(H2O)].2H2O.MeOH denoted CAU-17, was synthesized

175 this study, the ability of a nanocrystalline Bi foam electrode to serve as an efficient and high capa

176 esponding product from reaction with the new Bi(II) radical Bi(NON(Ardouble dagger))(*) (Ar(double da

177 For example, circa 10 nm Bi NCs capped with (N2H5)4Sb2Te7 chalcogenidometallate l

178 ed conductance in the surface bands of 50-nm Bi nanowires.

179 Hf showed the lowest Dmin values, </=10 nm; Bi, W, In, Pb, Pt, Ag, Au, Tl, Pd, Y, Ru, Cd, and Sb had

180 perovskite structure to incorporate nontoxic Bi(3+) into the perovskite lattice in Cs2AgBiBr6 (1).

181 We define a modified Biot number (Bi) as an indicator of requirements for sidewall insulat

182 e and double bonds with boron in BiB2 O(-) ([Bi identical withB-B identical withO](-) ) and Bi2 B(-)

183 Several Bi 6p x/y bands of Y2 O2 Bi are raised in energy by oxygen doping because the 2p

184 When doped with oxygen, the layered Y2 O2 Bi phase becomes a superconductor.

185 erconductivity is satisfied in O-doped Y2 O2 Bi.

186 s calculations for undoped and O-doped Y2 O2 Bi.

187 The amount of Bi found in acidic leachates of the interiors of both at

188 monstrate its application to the analysis of Bi(6)Ti(2.8)Fe(1.52)Mn(0.68)O18 (B6TFMO) thin films, tha

189 ts not only pave the way for applications of Bi(0).(5)Na(0).(5)TiO(3)-based piezoceramics, but also h

190 We report a class of Bi-birnessite (a layered manganese oxide polymorph mixed

191 Through a combination of Bi determination methods the compositional profile of th

192 have identified an optimized composition of Bi(1.5)Sb(0.5)Te(1.7)Se(1.3) with the highest resistivit

193 ptimized; among others, the concentration of Bi(3+) ions, the deposition conditions for the bismuth-f

194 mulated small-angle X-ray scattering data of Bi@U24 and Pb@U24 solutions revealed that this technique

195 can be used for the routine determination of Bi, providing repeatability and accuracy comparable to t

196 The electrical doping effect of Bi is observed at a 100 times lower concentration than f

197 n ascribed to the 6s(2) lone-pair effects of Bi(3+) at around 135 K, and a long-range antiferromagnet

198 These metrics highlight the efficiency of Bi-CMEC, since only noble metals have been previously sh

199 , as demonstrated by the material example of Bi/Cl/Si(111) nanofilm.

200 The high fraction of Bi deposited in the atomizers indicates significant reac

201 chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating r

202 his is the first experimental observation of Bi-B double and triple bonds, opening the door to design

203 ans of ab initio calculations a new phase of Bi which is a topological crystalline insulator characte

204 e-like activity of Au NPs in the presence of Bi(3+) is a result of the various valence (oxidation) st

205 ture and the magneto-transport properties of Bi(1.5)Sb(0.5)Te(3-x)Se(x) (BSTS) series.

206 The remarkable difference in atomic radii of Bi and Se in Bi2Se3 may explain why Bi2Se3 shows differe

207 of the various valence (oxidation) states of Bi(3+) and Au (Au(+)/Au(0)) atoms on the nanoparticle's

208 Here, we probe the electronic structure of Bi(2)Se(3) employing high resolution photoemission spect

209 II) compounds with sulfur gives mixtures of [Bi(NON(R))]2(mu2-Sn) (NON(R) = [O(SiMe2NR)2](2-)).

210 eadily on the electrodeposited Pt but not on Bi.

211 her hydride forming elements (As, Sb, Se) on Bi response by AAS using DBD and QTA atomizers was inves

212 g energies and exhibits contrasting shift on Bi and Se terminated surfaces with complex time dependen

213 oncentrations of up to ~35%, substituting on Bi sites, were achieved for Dy, Gd, and Ho doping.

214 wn on a single quintuple layer Bi(2)Se(3) or Bi(2)Te(3).

215 unneling microscope to explore an overdoped (Bi, Pb)2Sr2CuO6+delta with a large Fermi surface (FS).

216 Zn, As, Se, Sr, Mo, Cd, Sn, Sb, Ba, Hg, Pb, Bi, Th, and U) in green coffee samples and their infusio

217 agram for the LnAuZ (Z = Ge, As, Sn, Sb, Pb, Bi) family of phases.

218 rface methodology to identify the optimal Pd-Bi-Te catalyst stoichiometry.

219 Ex situ plated Bi film electrodes (Bi-FE) have been employed, for the f

220 operties of single elemental polycrystalline Bi via spark plasma sintering results in 'double-decoupl

221 ectrum of quinone substrates via a Ping Pong Bi Bi steady-state kinetic mechanism, generating the cor

222 riented GaAs1-xBix/GaAs structure possessing Bi surface droplets capable of catalysing the formation

223 lical Dirac fermions emerge in predominantly Bi bilayer states, which are created by a giant Rashba e

224 n water with precipitation of its protecting Bi(3+)-counterions, it rapidly aggregates to ~22 angstro

225 on, based on microstructure analyses of pure Bi samples treated under high pressure and high temperat

226 ct from reaction with the new Bi(II) radical Bi(NON(Ardouble dagger))(*) (Ar(double dagger) = C6H2(CH

227 ts comprising the determination of recovered Bi in the nitric acid leachates from deposition in the a

228 The resulting Bi-NaTi2(PO4)3 cell was tested under various salination

229 The morphology of the RGO/Bi nanocomposites provides a better choice as an electro

230 by stripping voltammetric analysis using RGO/Bi nanocomposite as an electrode material.

231 the large-gap insulators, KHgX (X = As, Sb, Bi), which we propose as the first material class whose

232 H2 CH2 NSiMe2 Bu(t) )3 , An=U, Pn=P, As, Sb, Bi; An=Th, Pn=P, As; Tren(TIPS) =N(CH2 CH2 NSiPr(i)3 )3

233 The planar Sb/Bi honeycomb structure restores the mirror symmetry, and

234 We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topologica

235 that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two

236 odissociation spectroscopy of mass-selected [Bi(CO2 )n ](-) cluster ions was used to follow the struc

237 on by NTMT1 proceeds via a random sequential Bi Bi mechanism.

238 Several Bi 6p x/y bands of Y2 O2 Bi are raised in energy by oxyg

239 ve carbon electrode using an organic soluble Bi(3+) precursor streamlines preparation of this materia

240 electrical resistivity measurement to study Bi(Ni1/2Ti1/2)O3 perovskite under high pressure.

241 iated flakes of the high-T c superconductor, Bi-2212, and the CDW-dominated TMD layered material, 1T-

242 ible with the 6p x/y orbitals of surrounding Bi atoms.

243 tion and basic properties of two new ternary Bi-O-S compounds, Bi2OS2 and Bi3O2S3.

244 The Th-Bi combination was too unstable to isolate, underscoring

245 Chemical bonding analyses reveal that Bi forms triple and double bonds with boron in BiB2 O(-)

246 Bi exchange is sufficiently facile such that Bi has an inhibitory effect on OER.

247 The Bi-B double and triple bond strengths are calculated to

248 biceps muscle (on average by 49%) after the Bi-10ms-C paradigm, but was suppressed for C-25ms-Bi (by

249 ge of bandgaps varying from 0.24 eV (for the Bi compound) to 0.87 eV (for the P compound).

250 atoms are the centers of Bi4 squares in the Bi square net.

251 sitions are correlated to the changes in the Bi-Te bond and bond angle as function of pressures.

252 als of Cu to reversibly intercalate into the Bi-birnessite-layered structure during its dissolution a

253 The ability of the Bi film electrode to perform speciation measurements was

254 er on the one hand and quantification of the Bi fraction transportable outside the atomizer on the ot

255 REBiTe3, wherein 50% of the Bi is substitutionally replaced by a RE atom (RE = Gd, D

256 , we have demonstrated the usefulness of the Bi-CoPaM-based approach, which may be helpful for the an

257 eans of a systematic kinetic analysis of the Bi-Te system reacting to Bi2Te3, we establish a third po

258 val of ions and thus the plating rate on the Bi UME, to one ion every few seconds.

259 fields from anisotropic hole pockets on the Bi(111) surface.

260 believe that with further optimizations the Bi/BiOCl electrode will enable efficient and practical d

261 to its better functional properties over the Bi film electrode.

262 midazolium based ionic liquid promoters, the Bi-CMEC platform can selectively catalyze conversion of

263 lar structure of LiBi(TPP)2 is such that the Bi sits between the porphyrins and is directed towards t

264 "nanotracks" are found to exist trailing the Bi droplets on the sample surface.

265 ination conditions were identified where the Bi/NaTi2(PO4)3 cell achieved a desalination/salination c

266 energy of electron traps decreases with the Bi (or N)-related downward shift of the conduction band.

267 The measured values with the Bi-FE were in good agreement with the values obtained us

268 substrate choice and film thickness on the (Bi, Sb)2Te3 unit cell using high-resolution X-ray diffra

269 the interlayer charge transfer between these Bi/Cu dual vacancies, which results in the significant i

270 The integrated device consisted of thin Bi, Ag, and Pt films (serving as the working, reference,

271 An appealing attribute of this Bi-2212 conductor is that, being without macroscopic tex

272 of electrical and thermal parameters through Bi/Cu dual vacancies.

273 gh leakage to be oxide ion conduction due to Bi-deficiency and oxygen vacancies induced during materi

274 he diiodide anion I2(*-) directly ligated to Bi, [Bi(I2(*-))Ix](n).

275 employing bismuth trifluoromethanesulfonate [Bi(OTf)3] as the Lewis acid.

276 ecent theoretical calculations, at least two Bi-related traps were revealed and associated with Bi pa

277 any kind of An-Sb molecular bond, and the U-Bi bond is the first two-centre-two-electron (2c-2e) one

278 However, the U-Bi complex is the heaviest 2c-2e pairing of two elements

279 showed that FadD33 proceeds via a Bi Uni Uni Bi ping-pong mechanism.

280 "INHIBIT" logic gate is fabricated by using Bi(3+) and Hg(2+) as the input and the peroxidase-like a

281 dvantages and potential limitations of using Bi as a Cl-storage electrode.

282 ed and developed via one-pot synthesis using Bi(NO3)3 as a catalyst.

283 e obtained in good to excellent yields using Bi(OTf)3, NH4OAc, or N2H4.

284 When Bi as a Cl-storage electrode was coupled with NaTi2(PO4)

285 When Bi(3+) and Hg(2+) coexist, strong Hg-Au amalgamation res

286 Why Bi(2)Sr(2)CaCu(2)Ox (Bi2212) allows high critical curren

287 AGNES with Bi-FE yielded a very good detection limit (3sigma) for P

288 ated traps were revealed and associated with Bi pair defects, i.e. (VGa+BiGa)(-/2-) and (AsGa+BiGa)(0

289 As a result, BiCuSeO with Bi/Cu dual vacancies shows a high ZT value of 0.84 at 75

290 et, porous, paper-like substrate coated with Bi(OH)3 or its alkaline derivatives at pH 11.

291 The highest yields were observed with Bi-, Te-, and Pb-based additives, and particularly from

292 ping of acidic H2S gas and its reaction with Bi(III) species, forming colored Bi2S3.

293 correlations above TC in underdoped BaPb1-x Bi x O3, and provide information on the dynamical interp

294 transient terahertz conductivity of BaPb1-x Bi x O3--a material for which superconductivity is "adja

295 Deep-level defects in n-type GaAs1-x Bi x having 0 </= x </= 0.023 grown on GaAs by molecular

296 Recently, (Sb1-x Bi x )2Te3 was introduced as a non-metallic TI whose car

297 of observing excitonic instability of (Sb1-x Bi x )2Te3.

298 ast carrier dynamics in the series of (Sb1-x Bi x )2Te3.

299 d rare-earth ternary compounds La3Cu3X4 (X = Bi, Sb, As, and P) using first principles electronic str

300 Here we report that Bi2Sr2CaCu2O(8-x) (Bi-2212) can be made in the much more desirable isotropi

301 The phase diagram of BaPb(1-x)Bi(x)O3 exhibits a superconducting dome in the proximity

302 At native densities in the model Bi2X3 (X=Bi, Te) compounds, defect resonance states are predicted