ライフサイエンスコーパス: GaAs

1 GaAs based optoelectronic devices (e.g. solar cells, mod

2 ilm grown on Ge buffers deposited on a (001) GaAs substrate.

3 (As) vacancies in the gallium arsenide 110 [GaAs(110)] surface with atomic precision, thereby tuning

4 location in a freestanding GaAs/In0.2Ga0.8As/GaAs membrane by synchrotron X-ray micro-beam Laue diffr

5 ium burst of coherent spin transfer across a GaAs/ZnSe interface, but less than 10% of the total spin

6 Here we report phonon generation in a GaAs double quantum dot, configured as a single- or two-

7 state of exciton polaritons is observed in a GaAs multiple quantum-well microcavity from the decrease

8 can quench dynamic nuclear polarization in a GaAs quantum dot, because spin conservation is violated

9 each consisting of an electron confined in a GaAs/AlGaAs double quantum dot.

10 Images of the surface electric fields of a GaAs/AlxGa1-xAs heterostructure sample show individual p

11 describe electron-emission measurements on a GaAs/AlGaAs heterostructure that introduces an internal

12 the technique on a prototypical 2D system, a GaAs quantum well, we uncover signatures of many-body ef

13 We demonstrate the method using a GaAs multi-quantum well sample.

14 antimony, as well as their interface with a GaAs (100) substrate.

15 an n-type FMS, CdCr(2)Se(4), into an AlGaAs/GaAs-based light-emitting diode structure.

16 ned electron density in an individual AlGaAs/GaAs heterojunction via hyperfine shifts.

17 Six hundred AlGaInP/GaAs light-emitting diode segments with a chip size of 2

18 d, valence spectra of Ga(0.97)Mn(0.03)As and GaAs, and these are in good agreement with theory.

19 B permanent magnets, integrated circuits and GaAs/GaP-based light-emitting diodes, demanding 22-37%,

20 in an InGaAs quantum well as an emitter, and GaAs as an active mediator of surface plasmons for enhan

21 l system to illustrate basic principles, and GaAs, as a technologically-relevant material to illustra

22 nation losses seen in high-efficiency Si and GaAs devices.

23 r traditional semiconductors (such as Si and GaAs), would bring wide benefits for applications in ult

24 on-chip integration of Si3N4 waveguides and GaAs nanophotonic geometries with InAs quantum dots.

25 approach with three different applications: GaAs-based metal semiconductor field effect transistors

26 Gallium arsenide (GaAs) is a semiconductor utilized in the electronics ind

27 Here we image gallium arsenide (GaAs) nanowires during growth as they switch between pha

28 mpound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applicati

29 a single, naturally formed gallium arsenide (GaAs) quantum dot have been measured with high spatial a

30 ong electrons and holes in gallium arsenide (GaAs) quantum wells.

31 esent data from an induced gallium arsenide (GaAs) quantum wire that exhibits an additional conductan

32 ity, reliability and cost, gallium arsenide (GaAs) remains the established technology for integrated

33 ations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body pert

34 tors such as silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) have band gaps that m

35 ron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in the host lattice are

36 The compound semiconductor gallium-arsenide (GaAs) provides an ultra-clean platform for storing and m

37 epitaxial silver film on a gallium arsenide [GaAs(110)] surface was synthesized in a two-step process

38 On flat gallium arsenide [GaAs(110)] terraces, the injection efficiency was 92%, w

39 Other porous substrates such as GaAs and GaN, with similar surface characteristics but d

40 wing in spin-orbit-coupled materials such as GaAs and InGaAs and for laser light traversing dielectri

41 The 4 crystal symmetry in materials such as GaAs can enable quasi-phasematching for efficient optica

42 mentation of compound semiconductors such as GaAs in applications whose cost structures, formats, are

43 e electronic properties of materials such as GaAs, and is important for spintronic devices.

44 tures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger qua

45 those in a zinc-blende semiconductor such as GaAs.

46 at of direct band gap semiconductors such as GaAs.

47 e realizable in an experimental system of Au/GaAs(111) surface with an SOC gap of approximately 73 me

48 to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high

49 sh between contaminant levels of Ga and bulk GaAs structure in a depth profile of a MnAs/GaAs heteroj

50 e report the manipulation of the SHE in bulk GaAs at room temperature by means of an electrical inter

51 than that obtained from the surface of bulk GaAs.

52 anges in the photoelastic properties of bulk GaAs.

53 emonstrate that a hybrid structure formed by GaAs nanowires with a highly dense array of bow-tie ante

54 important optoelectronic materials such as c-GaAs(s).

55 Crystalline GaAs (c-GaAs) has been prepared directly through electroreductio

56 s-prepared films confirmed the identity of c-GaAs(s).

57 utions of dissolved As(2)O(3)(aq) was pure c-GaAs(s) at much lower temperatures than 200 degrees C.

58 emperature on the quality of the resultant c-GaAs(s).

59 TiO2-coated GaAs and GaP photoelectrodes exhibited photovoltages of

60 Colloidal GaAs quantum wires with diameters of 5-11 nm and narrow

61 ffusion studies with isotopically controlled GaAs and GaP have been restricted to Ga self-diffusion,

62 uced by anisotropic etching of oxide-covered GaAs nanocrystals with 6 M HCl(aq).

63 Crystalline GaAs (c-GaAs) has been prepared directly through electro

64 cs of the in situ cleaved single-crystalline GaAs(110) substrates.

65 bserved, and use these predictions to design GaAs heterostructures.

66 nal channels--are usually defined from doped GaAs/AlGaAs heterostructures using electron-beam lithogr

67 The discovery of ferromagnetism in Mn-doped GaAs has ignited interest in the development of semicond

68 we study a cavity device with four embedded GaAs quantum wells hosting excitons that are spectrally

69 e anneal, the N 1s peak of hydrazine-exposed GaAs nanocrystals shifted to 3.2 eV lower binding energy

70 lectrical spin injection and detection in Fe/GaAs/Fe vertical spin-valves (SVs) with the GaAs layer o

71 ed with spin transport at the interfacial Fe/GaAs Schottky contacts and in the GaAs membranes, where

72 In the case of the Fe/GaAs/GaMnAs multilayer, hystereses are clearly observed

73 ation alignment in magnetic layers in the Fe/GaAs/GaMnAs structure by current-induced spin-orbit (SO)

74 by Au, Ag and Al nanostructures on thin-film GaAs devices we reveal that parasitic losses can be miti

75 specifically designed for on-chip thin-film GaAs waveguides is presented serving as a flexible analy

76 Thin-film GaAs waveguides were designed and fabricated by molecula

77 work, the H(+) energy and fluence chosen for GaAs implantation are similar to that of protons origina

78 nsiderably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields Del

79 on of a single dislocation in a freestanding GaAs/In0.2Ga0.8As/GaAs membrane by synchrotron X-ray mic

80 d excitonic absorption features arising from GaAs quantum wires are detected, allowing extraction of

81 power (24 mW) and speed (in terahertz) from GaAs optical emitters using deep-level transitions.

82 Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of ne

83 wall in a perpendicularly magnetized GaMnAsP/GaAs ferromagnetic semiconductor and demonstrate devices

84 investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine

85 Epitaxially grown GaAs slab waveguides serve as optical transducer for tai

86 nd harmonic generation in a single hexagonal GaAs nanowire.

87 P 12 profile in non-annealed H(+) implanted GaAs obtained from the analysis of the time-domain Brill

88 quantum wells (QWs) periodically arranged in GaAs matrix.

89 hen light circulates about the 4 axis, as in GaAs whispering-gallery-mode microdisks, it encounters e

90 ned acoustic phonon polarization branches in GaAs nanowires with a diameter as large as 128 nm, at a

91 oping sites analogous to DX or AX centers in GaAs.

92 trate that nitrogen isoelectronic centres in GaAs combine both the uniformity and predictability of a

93 e a robust mode for electrical conduction in GaAs quantum point contacts, driven into extreme non-equ

94 lve a controversy on hot electron cooling in GaAs.

95 system, despite weak spin-orbit coupling in GaAs.

96 close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional elec

97 l Hanle measurement has been demonstrated in GaAs at room temperature.

98 coherent phonon excitation and detection in GaAs using ultrafast THz-pump/optical-probe scheme.

99 Si3N4 waveguides and single-quantum dots in GaAs geometries, with performance approaching that of de

100 These results for carrier dynamics in GaAs(110) suggest strong carrier-carrier scatterings whi

101 ve microscopic insight into hot electrons in GaAs and enables accurate ab initio computation of hot c

102 xcitons in a MoSe2 monolayer and excitons in GaAs quantum wells via coupling to a cavity resonance.

103 coherence, as seen in recent experiments in GaAs-based quantum dots.

104 s of electron density and electric fields in GaAs semiconductor devices are displayed with NMR experi

105 igh-mobility two-dimensional electron gas in GaAs-AlGaAs heterostructures.

106 ts of a quasi-two-dimensional exciton gas in GaAs/AlGaAs coupled quantum wells and the observation of

107 he emergence of the persistent spin helix in GaAs quantum wells by independently tuning alpha and bet

108 onator design, although demonstrated here in GaAs-InAs microdisk laser, should be applicable to any l

109 Mn acceptors, which are mediated by holes in GaAs.

110 Formula: see text] state first identified in GaAs.

111 two low-lying states of donor impurities in GaAs.

112 rs of magnitude over similar measurements in GaAs-based quantum dots.

113 excitons and unbound electron-hole pairs in GaAs quantum wells.

114 Here we measure the nuclear polarization in GaAs/AlGaAs quantum dots with high accuracy using a new

115 on times are comparable to those reported in GaAs.

116 m of about 30 THz, 100 times broader than in GaAs.

117 rder 1 mueV, almost one order larger than in GaAs/GaAlAs QDs.

118 n splittings are expected to exceed those in GaAs when the D'yakonov-Perel' spin relaxation mechanism

119 tude longer than the intrinsic timescales in GaAs quantum dots, whereas gate operation times are comp

120 change by a factor of 40 is unprecedented in GaAs and the highest value achieved is comparable to tha

121 its at 1.5 microm fibre-optic wavelengths in GaAs using optical transitions from arsenic antisite (As

122 Working in GaAs facilitates manipulation of the localized mechanica

123 al ordering of arrays of self-assembled InAs-GaAs quantum dots (QDs) has been quantified as a functio

124 cessful fabrication and operation of an InAs/GaAs quantum dot based intermediate band solar cell conc

125 and cavities containing self-assembled InAs/GaAs quantum dots-a mature class of solid-state quantum

126 Self-assembled, epitaxially grown InAs/GaAs quantum dots (QDs) are promising semiconductor quan

127 The integration of InAs/GaAs quantum dots into nanophotonic cavities has led to

128 e, crystalline III-V nanocrystals, including GaAs, InAs, GaP, and InP.

129 oherence in individual self-assembled InGaAs/GaAs quantum dots: spin-echo coherence times in the rang

130 brane electrolysers in series with one InGaP/GaAs/GaInNAsSb triple-junction solar cell, which produce

131 gy to low-energy states in a type-II 2D InSe/GaAs heterostructure.

132 ace region of single-crystal semi-insulating GaAs that has been coated and passivated with an aluminu

133 e spacings with the spacings of an intrinsic GaAs(001) surface lattice.

134 as a function of distance from an irradiated GaAs surface.

135 Using an isolated GaAs double quantum dot defined by electrostatic gates a

136 Mice were administered i.p. 200 mg/kg GaAs crystals or latex beads, or vehicle.

137 ns much slower compared with lattice-matched GaAs/AlGaAs structures.

138 duction band structure of the host material (GaAs).

139 xciton resonances measured for 15 few-micron GaAs crystal slabs with different values of N, reveal a

140 GaAs structure in a depth profile of a MnAs/GaAs heterojunction.

141 erved magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system.

142 resistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron sys

143 in a surprising setting: ultrahigh-mobility GaAs/AlGaAs heterostructures that contain a 2DES exhibit

144 Moreover, GaAs hyperfine material constants are measured here expe

145 lds acting upon electron spin-system of an n-GaAs layer in a high-Q microcavity probed by ellipticall

146 proposed that the formation and breakage of GaAs-O-Si bonding bridges are responsible for the remova

147 irradiation on photoelastic coefficients of GaAs is of primary importance to space applied optoelect

148 bute 50% of the bulk thermal conductivity of GaAs, GaN, AlN, and 4H-SiC near room temperature.

149 Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial

150 s are positioned in proximity to the edge of GaAs valence band, to the sequence of a peptide that bin

151 hese challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial asse

152 incorporating Bi suppresses the formation of GaAs-like electron traps, thus reducing the total trap c

153 of an acceptor state within the band gap of GaAs.

154 the predictions with homoepitaxial growth of GaAs(001) on GaAs(001) substrates through monolayer grap

155 , we obtain cavity mediated hybridization of GaAs and J-aggregate excitons in the strong coupling reg

156 plementation, allowing direct integration of GaAs waveguides and cavities containing self-assembled I

157 and the nucleation site of each new layer of GaAs.

158 uperlattices consisting of 2 to 21 layers of GaAs and GaP have been prepared.

159 geometries can be created in nanoribbons of GaAs and Si in this manner and that these configurations

160 defects influence photoelastic properties of GaAs.

161 g bridges are responsible for the removal of GaAs material during the sliding process.

162 o probe the phonon mean free path spectra of GaAs, GaN, AlN, and 4H-SiC at temperatures near 80 K, 15

163 ge PL, indicating that the surface states of GaAs nanocrystals were effectively passivated by this tw

164 etry in the zinc-blende crystal structure of GaAs however, results in a strong piezoelectric interact

165 The performance and versatility of GaAs/AlGaAs thin-film waveguide technology in combinatio

166 ns with homoepitaxial growth of GaAs(001) on GaAs(001) substrates through monolayer graphene, and sho

167 chip-integrated solid-state devices based on GaAs/AlGaAs technology waveguide fabricated via conventi

168 red nucleation positions for quantum dots on GaAs surfaces.

169 nanostructures can be directly fabricated on GaAs surfaces by sliding a SiO2 microsphere under an ult

170 rsion curves of a 50 nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon co

171 MnAs epitaxial thin films on GaAs(001) single crystalline substrates crystallize at r

172 As1-x Bi x having 0 </= x </= 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature

173 Epitaxial InAs quantum dots grown on GaAs substrate are being used in several applications ra

174 erials that have a large lattice mismatch on GaAs.

175 or nondestructive surface nanofabrication on GaAs.

176 solution self-assembly of octadecanethiol on GaAs (001) at ambient temperature.

177 d molecules show that the octadecanethiol on GaAs(001) monolayers undergo exchange with solute thiol

178 magneto-transport measurements performed on GaAs/AlGaAs high purity Hall bars with two inner contact

179 optical quality 1.55 microm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and t

180 ion procedure to passivate surface states on GaAs nanocrystals.

181 globin sensing array based on hybrid organic GaAs-based devices, which can remain in biological solut

182 luminescence (PL) emission of photocorroding GaAs/AlGaAs quantum well (QW) biochips.

183 ectional operation compared to the prevalent GaAs/Al0.15Ga0.85As material system.

184 e electron spin dynamics in optically pumped GaAs microdisc lasers with quantum wells and interface-f

185 sional electron gas hosted by a high-quality GaAs quantum well.

186 owth onto the cleaved edge of a high-quality GaAs/AlGaAs heterostructure.

187 nd hydrophobic ambient surface, and direct S-GaAs attachment.

188 trate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattic

189 nonlinear spectral characteristics of short GaAs quantum wires by tunnelling spectroscopy, using an

190 ic molecules on three material surfaces: Si, GaAs, and Pd.

191 In the widely studied GaAs-based system, the composite fermion picture is thou

192 Cl-terminated GaAs nanocrystals have been produced by anisotropic etch

193 The Cl-terminated GaAs nanocrystals were then functionalized by reaction w

194 rmation under a 4 nm groove, confirming that GaAs can be removed without destruction.

195 The GaAs quantum wire and well band gaps scale according to

196 strain based on lattice mismatch between the GaAs and ALD-deposited aluminum oxide due to their diffe

197 observation of Mn-induced states between the GaAs valence-band maximum and the Fermi level, centred a

198 o improve the optical properties of both the GaAs and ZnSe layers on either side of the interface.

199 yer, leaving long-lived spins trapped in the GaAs layer.

200 rfacial Fe/GaAs Schottky contacts and in the GaAs membranes, where balance between the barrier profil

201 oresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed co

202 -induced, electronic-state-transition in the GaAs/AlGaAs 2DES.

203 tions that disrupt the cubic symmetry of the GaAs lattice, resulting in quadrupolar satellites for nu

204 ric charge immobilized on the surface of the GaAs/AlGaAs biochips.

205 series of structures we demonstrate that the GaAs/AlGaAs interface can provide superior spin-transpor

206 Unfortunately, the GaAs bandgap wavelength (0.85 microm) is far too short f

207 n STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn int

208 /GaAs/Fe vertical spin-valves (SVs) with the GaAs layer of 50 nanometers thick and top and bottom Fe

209 Therefore, GaAs exposure differentially modulated cathepsin activit

210 xides and dissolution of a limited thickness GaAs cap material (</=10nm) that results in the appearan

211 ere how an X-ray pump beam transforms a thin GaAs specimen from a strong absorber into a nearly trans

212 ed spin-polarized electrons drifting through GaAs Hall bars.

213 , to the sequence of a peptide that binds to GaAs (100) results in changes of both the electron affin

214 by over two orders of magnitude compared to GaAs grown under the same conditions.

215 The phenotype of PEC directly exposed to GaAs mirrored cytokine-activated macrophages, in contras

216 optic components that are lattice-matched to GaAs integrated circuits.

217 Se3 film van der Waals bound to a Se-treated GaAs substrate.

218 bonds that help to passivate the underlying GaAs layer.

219 We demonstrate that in an undoped GaAs/AlGaAs layer, spins are detected at distances reach

220 a(0.97)Mn(0.03)As, and the reference undoped GaAs.

221 ove the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times whil

222 ions that are not present in the unpatterned GaAs quantum well.

223 15 % for light-driven water splitting using GaAs solar cells.

224 A three-well design scheme with shallow-well GaAs/Al0.10Ga0.90As superlattices is developed to achiev

225 n we investigate a (001)-oriented GaAs1-xBix/GaAs structure possessing Bi surface droplets capable of

226 Using ZnSe/GaAs as a model system, we explore the use of ultraviole