ライフサイエンスコーパス: Ge

1 Ge et al. now show that skin tumors exhibit merged chrom

2 Ge-Sb-Te alloys have been widely used in optical/electri

3 H18(-) or as a large hypho-deltahedron of 18 Ge-atoms with a triangle of Pd3 inside, i.e., [Pd3@Ge18(

4 nthesis of a diphosphagermylene, [(Dipp)2P]2 Ge, in which one of the P centers is planar (Dipp=2,6-di

5 )](NH(3))(7.5) with the polyanion [(MesCu)(2)Ge(4)](4-).

6 the salt [K([18]-crown-6)](2)K(2)[(MesCu)(2)Ge(4)](NH(3))(7.5) with the polyanion [(MesCu)(2)Ge(4)](

7 pped Au squares (or corner-shared Au(Au(4/2))Ge octahedra), in which the apical Au-Ge pairs in adjoin

8 [(eta(3)-Ge(4))Zn(eta(2)-Ge(4))](6-) is a new isomer of the [(Ge(4))Zn(Ge(4))](6-

9 rdinate germanium cation [(IDipp){(Me3Si)2CH}Ge:](+) has been synthesized, which lacks pi-donor stabi

10 SrAu(3)Ge exhibits a pronounced uniaxial negative thermal expan

11 The structure of SrAu(3)Ge, a reapportioned radical2 x radical2 x 1 superstructu

12 [(eta(3)-Ge(4))Zn(eta(2)-Ge(4))](6-) is a new isomer of the [(Ge(

13 Moreover, Li4.4 Si and Li4.4 Ge NCs were conformally encapsulated in carbon fibers, p

14 ported, which are Li4.4 Si, Li3.75 Si, Li4.4 Ge, and Li4.4 Sn.

15 igh spin polarization at the Co2FeSi0.5Al0.5/Ge interface, hence can be used as a model to study spin

16 Quantitation stability of a (68)Ge flood phantom was demonstrated within 0.34%.

17 Scatter fraction measured with a (68)Ge line source in the scatter phantom was stable within

18 mined new relative response ratios for a (68)Ge solid epoxy mock syringe source used in activity cali

19 pH range, enabling direct elution from a (68)Ge/(68)Ga generator into a lyophilized radiopharmaceutic

20 r averaged 80% (range, 72.0%-95.1%), and (68)Ge breakthrough was less than 0.006%, initially decreasi

21 d relative response ratios for (18)F and (68)Ge by -3.7%, allowing users of the commercial mock syrin

22 The GMP-certified (68)Ge/(68)Ga generator system was studied for a year.

23 (68)Ga was obtained from a 1.85-GBq (68)Ge/(68)Ga generator.

24 A good-manufacturing-practices (GMP) (68)Ge/(68)Ga generator that uses modified dodecyl-3,4,5-tri

25 68)Ga from coeluted metallic impurities ((68)Ge(4+), Fe(3+), Zn(2+), and Ti(4+)) on various cation-ex

26 me to 0.001% (expressed as percentage of (68)Ge activity present in the generator at the time of elut

27 It ensures the removal of (68)Ge before (68)Ga-radiopharmaceutical preparation and hig

28 on of 90% EtOH/0.9N HCl after removal of (68)Ge-breakthrough in a washing step.

29 The radionuclidic ((68)Ge) impurity was 0.00001% or less (under the detection l

30 A 2,040-MBq self-shielded (68)Ge/(68)Ga generator provided metal-free (68)GaCl3 ready

31 rces, identical in geometry to the solid (68)Ge epoxy calibration source currently on the market, wer

32 The results allow the (68)Ge activity of the mock syringe source to be expressed i

33 The (68)Ge levels in the final drug products were under the dete

34 mple of the successful utilization of a (69) Ge-based agent for PET/MR imaging.

35 ribution pattern and the feasibility of (69) Ge-SPION@PEG for in vivo dual-modality positron emission

36 by an anionic bis(NHC) chelate ligand and a Ge(II) donor.

37 To demonstrate the concept, a Ge segment is inserted between the Au and Fe3O4 domains

38 e Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing

39 f an Fe layer on the top of bulk Si and of a Ge bulk sample.

40 ion is actually a vertical displacement of a Ge layer through a Te layer, followed by a lateral motio

41 posed crystal structures, which consist of a Ge parent crystal in which the P atoms form a third-near

42 spectrum, consistent with the formation of a Ge-C bond.

43 cubic symmetry in the Fe film deposited on a Ge buffer is surprising, and we discuss possible reason

44 est occupied molecular orbital (HOMO)-with a Ge-centred lone pair as the HOMO-1.

45 d NBO and AIM analyses are consistent with a Ge-P bond order greater than unity.

46 tobleaching (PB) and transient PD (TPD) in a-Ge(x)As(35-x)Se65 thin films as a function of network ri

47 ther in the sub-bandgap (TA(2)) regions of a-Ge(5)As(3)(0)Se(6)(5) thin films.

48 r, we study the crystallization of amorphous Ge using atomistic simulations of critical nano-metric n

49 form-diameter Si cores, Ge onto Ge cores and Ge onto Si cores can generate diameter-modulated core-sh

50 Cu, Mn and Ge influencing antioxidant activity were determined toge

51 e, anode, and cathode, based on the Li-S and Ge-S components in Li10GeP2S12 acting as the active cent

52 d electronic properties of partial C, Si and Ge decorated graphene were investigated by first-princip

53 For composites with Si and Ge microinclusions we obtain reflectance efficiencies of

54 conductor quantum dots, especially on Si and Ge nanocrystals.

55 rsification of the bulk properties of Si and Ge, in complete agreement with the available experimenta

56 tage-induced rupture of individual Si-Si and Ge-Ge bonds.

57 ixation of N2 , CO2 and R3 ECl (E=C, Si, and Ge).

58 Ge x alloys as a function of temperature and Ge concentration can be described by the cBOmega thermod

59 t individual defects in crystalline WSe2 and Ge.

60 u(4/2))Ge octahedra), in which the apical Au-Ge pairs in adjoining nets are strongly interbonded in t

61 domains of Au-Fe3O4 heterodimers to form Au-Ge-Fe3O4 heterotrimers.

62 s, including identification of a proposed Au-Ge-Au-Fe3O4 intermediate.

63 p, is exo-bonded to one of the six available Ge atoms with the Ge-C bond positioned radially to the G

64 rication of uniform diameter, direct bandgap Ge(1-x)Sn(x) alloy nanowires, with a Sn incorporation up

65 chmark the behavior of the less well behaved Ge-germanide interfaces for this purpose.

66 As target we use a cylindrically bent Ge crystal in Laue transmission geometry.

67 lifted within Si quantum wells clad between Ge-Si alloy barrier layers, but the magnitude of the val

68 source MBE by tuning the interaction between Ge-based P(GeH3)3 precursors and In atoms to yield nanos

69 New modes are observed in both Ge(2)Sb(2)Te(5) and GaSb after application of large pump

70 The Br-Ge(111) surface was methylated by reaction with (CH3)2Mg

71 of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-up growth pa

72 2, whose charges are differently affected by Ge and Ti occupation of octahedra.

73 This commentary highlights the article by Ge et al, which proposes the use of methylation and expr

74 pectra, consistent with the formation of a C-Ge bond.

75 over 20 times more conductive than the Ge-C-Ge sequence.

76 monstrate that the strong donor ability of C-Ge sigma-bonds can be used to raise the energy of the an

77 on increases conductance: for example, the C-Ge-C sequence is over 20 times more conductive than the

78 s an effective precatalyst for the catalytic Ge-H dehydrocoupling of (t)BuGeH3 to form ((t)BuGeH2)2 (

79 In this issue of Cancer Cell, Ge et al. show that overexpression of the oncoprotein iA

80 CH3-Ge(111) surfaces showed significantly greater resistance

81 Atomic-force micrographs of CH3-Ge(111) surfaces indicated that the surface remained ato

82 oximately 400 degrees C of the surficial CH3-Ge(111) groups.

83 sized by salt-metathesis reaction of [L2 (Cl)Ge:] 1 with sodium phosphaethynolate [(dioxane)n NaOCP].

84 in toluene gives compounds [(LB)Ge(II)Cl](+)[Ge(II)Cl(3)](-) (1) and [(LB)Sn(II)Cl](+)[Sn(II)Cl(3)](-

85 alised interface structure, terminated by Co-Ge bonds, preserves the high spin polarization at the Co

86 up reactions leading to oligomers comprising Ge-O bonds.

87 Importantly, for a fixed Se concentration, Ge:As ratio plays the critical role in controlling the n

88 deposition conditions, leading to controlled Ge enrichment of the solid product relative to the stoic

89 epositing Si onto uniform-diameter Si cores, Ge onto Ge cores and Ge onto Si cores can generate diame

90 conduction at crystalline Si and crystalline Ge interfaces and found that more than 15% of the interf

91 Elements present in small amounts (Cu, Ge, Mn, Mo, Ni, Sb, Sr, Ti, and V) were determined in ol

92 The selectively deposited Ge is crystalline, and its facet position can be synthet

93 Reaction of the diarylgermylene Ge(Ar(Me(6)))(2) [Ar(Me(6)) = C(6)H(3)-2,6-(C(6)H(2)-2,4

94 esents the first three-coordinate dicationic Ge(II) species stabilized by an anionic bis(NHC) chelate

95 3}3PR2] (R: Cy (1), (i)Pr (2)) with discrete Ge-P exo bonds.

96 we established that structurally disordered Ge regions contribute to the luminescence.

97 group 14 species Ar(iPr(4))EEAr(iPr(4)) (E = Ge, Sn), which give very different product structures.

98 II) pincer complexes with E = Si(II) and E = Ge(II) metallylene donor arms were synthesized via C-X (

99 ocycles, cyclopentadienyl species ArECp [E = Ge (3), Sn (4)] are formed.

100 ocytoplasmic proteins; rck/p54, Dcp1a, Edc3, Ge-1, and Xrn1 are insensitive to LMB and remain cytopla

101 cy of 3.4 THz has been observed in epitaxial Ge(2)Sb(2)Te(5) grown on GaSb(001).

102 n methods, polycrystalline films with excess Ge were frequently obtained.

103 a Zintl phase and thus represents the first Ge=Ge double bond under such conditions, as also suggest

104 nomena described in this Tutorial Review for Ge/Si should be relevant for other lattice-mismatched he

105 The integration of dislocation-free Ge nano-islands was realized via selective molecular bea

106 magnetic centers by diamagnetic ions [e.g., Ge(IV)] allows one to "switch off" specific spin sites i

107 tion mediated by the germylene (germanediyl) Ge(Ar(Me6))2 (Ar(Me6) = C6H3-2,6(C6H2-2,4,6-Me3)2) showe

108 Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention as direct b

109 Deposition of epitaxial germanium (Ge) thin films on silicon (Si) wafers has been achieved

110 l resistance by depositing a thin germanium (Ge) (20 nm) layer on garnet.

111 is work, Mg was microalloyed with germanium (Ge), with the aim of improving corrosion resistance by r

112 dride that does not engage in 3c-2e Ru-H --> Ge bonding.

113 of 3 to give the unusual dinuclear HGe: --> Ge: cation in 5.

114 Atomically flat, terraced H-Ge(111) was prepared by annealing in H2(g) at 850 degree

115 reater resistance to oxidation in air than H-Ge(111) surfaces.

116 ntl anions, and one anionic heterometallic [(Ge(4))Zn(Ge(4))](6-) cluster per formula unit.

117 exists in MC-ICPMS, e.g., Nd, Ce, W, Sr, Hf, Ge, Hg, and Pb isotopes, the nature of mass bias for Si

118 ults in a large electric potential change in Ge.

119 The formation of radiation damage in Ge above room temperature is dominated by complex dynami

120 e study the dynamics of radiation defects in Ge in the temperature range of 100-160 degrees C under p

121 evious work showing site-selective doping in Ge-Si core-shell nanowires, we find both an enhancement

122 ent that can be traced with the red shift in Ge K edge energy which is also identified by the princip

123 lysts permitted a greater inclusion of Sn in Ge nanowires compared with conventional Au catalysts, wh

124 (PL) attributed to emission from individual Ge nanocrystals (nc-Ge) spatially resolved using micro-p

125 Compound 3 is the first isolable Ge(0) complex with a single germanium atom stabilized by

126 of GeSe displays a boat conformation for its Ge-Se six-membered ring ("six-ring"), while the previous

127 -digermylium-2,4-diphosphacyclobutadiene [L2 Ge(mu-P)2 GeL2 ] 4 and bis(germyliumylidenyl)-substitute

128 myliumylidenyl)-substituted diphosphene [(L2 Ge-P=P-GeL2 )] 5 could also be obtained in moderate yiel

129 the entire PCO group, the unprecedented [L2 Ge-GeL2 ] complex 3 in 54 % yields bearing the Ge2(2+) i

130 gorithm to optimize the structure of layered-Ge/Si-clad Si quantum wells to improve this splitting.

131 and SnCl(2) in toluene gives compounds [(LB)Ge(II)Cl](+)[Ge(II)Cl(3)](-) (1) and [(LB)Sn(II)Cl](+)[S

132 rangements and phase evolution of various Li-Ge alloy phases during (de)alloying reactions with lithi

133 tting at the interface between the lithiated Ge layer and garnet.

134 luorination of LMNMe2 (L = PhC(N(t)Bu)2, M = Ge, Sn) using HF.pyridine in toluene leads to the format

135 ate class of iron chalcogenides, Fe2MS4 (M = Ge, Si) has been proposed as a possible alternative to p

136 n(II) hydride complexes, L(dagger)(H)M: (M = Ge or Sn, L(dagger) = -N(Ar(dagger))(SiPr(i)3), Ar(dagge

137 = Tb, Dy, Er, Ho, and X = S, Se), UMGe (M = Ge, Rh, Co), CeCoIn5, EuFe2(As(1-x)P(x))2, etc.], provid

138 se can be attributed to the unusual metallic Ge-Ge bonds which act in a similar way to organic chromo

139 dominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to

140 The formation of monohydride Ge-H bonds oriented normal to the surface was indicated

141 es of the prism interacting with one or more Ge atoms in three crystallographically different molecul

142 We identify an optimal sequence of multiple Ge/Si barrier layers that more effectively isolates the

143 n be used to design lower SBH contacts for n-Ge, which are needed technologically.

144 emission from individual Ge nanocrystals (nc-Ge) spatially resolved using micro-photoluminescence and

145 stics and we argue that the spread of the nc-Ge peaks in the PL spectrum is due to different confinem

146 r-sharing tetrahedra units together with new Ge-O bond formation and decrease in energetically unstab

147 hollow nickel germanide nanostructures of Ni-Ge core-shell nanoparticles by solid state reactions.

148 s formed from different core diameters of Ni-Ge core-shell nanoparticles have been studied.

149 ns of light emission in small (5 nm to 9 nm) Ge nanoparticles.

150 atoms during nanowire growth by comparing nu(Ge-H) absorption bands from operando measurements (i.e.,

151 With the addition of Ge, cathodic activation of Mg subject to cyclic polarisa

152 The most recent advances in the area of Ge-based nanocomposite electrode materials and electroly

153 X = N,P,As} semiconductors to a new class of Ge-III-V hybrid compounds, leading to the creation of (I

154 modynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely sh

155 family of phase-change materials consists of Ge-Sb-Te alloys.

156 We use strain to increase the diffusivity of Ge and Te atoms that are confined to 5 A thick 2D planes

157 st observed, further verifying the doping of Ge into BP and the formation of the PGex alloy.

158 electrics and also promotes the formation of Ge vacancies to provide enough carriers for electrical t

159 they are essential for the stable growth of Ge nanowires via the vapor-liquid-solid mechanism.

160 Despite the importance of Ge-Sb-Te alloys and the intense research they have recei

161 The limitations of Ge-based materials for energy-storage applications are d

162 eveals that there is a small outdiffusion of Ge into specific atomic planes of the Co2FeSi0.5Al0.5 fi

163 We investigated the optical properties of Ge nanocrystals surrounded by Ge3N4.

164 The replacement of Ge by Sn should reduce the raw material cost by a factor

165 The phonon spectrum of Ge(2)Sb(2)Te(5) is a signature of its crystallographic s

166 ctive nanowire shell synthesis in studies of Ge and Si growth on faceted Si nanowire surfaces.

167 Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applicatio

168 The compounds are grown directly on Ge-buffered Si(100) substrates using gas source MBE by t

169 ic direction in crystalline Fe film grown on Ge buffers deposited on a (001) GaAs substrate.

170 ate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition.

171 dra which are linked by a Zn atom, with one (Ge(4)) tetrahedron coordinating with a triangular face (

172 g Si onto uniform-diameter Si cores, Ge onto Ge cores and Ge onto Si cores can generate diameter-modu

173 thin the dithienosilole fragment with a C or Ge atom.

174 nanowire containing a delta-layer (X is C or Ge).

175 ) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of

176 porous Pt anode and the deposition of Si or Ge under bias at the cathode from chloride-based gaseous

177 alpha-beta-alpha chain composed of C, Si, or Ge atoms.

178 phosphaketenyl germyliumylidene [(L2 (O=C=P)Ge:] 2 (L2 =(p-tolyl)2 B[1-(1-adamantyl)-3-yl-2-ylidene]

179 A signal of P-Ge bond is first observed, further verifying the doping

180 e distance suggest a significant degree of P-Ge multiple bond character that is due to delocalization

181 his P center and the correspondingly short P-Ge distance suggest a significant degree of P-Ge multipl

182 ascinating compounds containing P-C, P-Si, P-Ge, and P-P bonds using a single step with a base-stabil

183 ied to access the analogous addition product Ge-Au-Fe3O4, allowing tuning between two distinct hetero

184 Such well-ordered high quality Ge islands present a step towards the achievement of mat

185 This behavior is attributed to a reduced Ge ionization rate as x approaches 1.

186 2](4-) unit is characterized by the shortest Ge-Ge distance (2.390(1) A) ever observed in a Zintl pha

187 f the periodic table, including Group 14 Si, Ge, Sn, and Pb.

188 Group 14 (C, Si, Ge) has a number of allotropes; some with significant ap

189 ermal and photobehavior of XH2OO (X = C, Si, Ge, and Sn) that serve as precursors for dioxiranes, an

190 ing functionalized E=E multiple bonds (E=Si, Ge, Sn, Pb) because of their potential to exhibit novel

191 ion given to the heavy group-IV elements Si, Ge and Sn.

192 y of materials (WHM with W = Zr, Hf; H = Si, Ge, Sn; M = O, S, Se, Te) with identical band topology.

193 ions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tail

194 nor character once the reagent R3MH (M = Si, Ge, Sn) enters the ligand sphere.

195 ions of internal alkynes with R3M-H (M = Si, Ge, Sn) follow an unconventional trans-addition mode in

196 chalcogenolates of formula M(ChAr)2 (M = Si, Ge, Sn, Pb; Ch = O, S, or Se; Ar = bulky m-terphenyl lig

197 tal group IV compounds (carbon nanodots, Si, Ge), III-V compounds (e.g., InP, InAs), and binary and m

198 germanene and stanene (2D allotropes of Si, Ge, and Sn), lends itself as a platform to probe Dirac-l

199 rit inclusion in the class of ubiquitous Si, Ge, and SiGe group IV systems.

200 The wide Si, Ge and Sn transparencies allow the use of binary and ter

201 agnetic half-metal compounds Co2TiX (X = Si, Ge, or Sn) with Curie temperatures higher than 350 K.

202 ional (2D) crystals termed 2D-Xenes (X = Si, Ge, Sn and so on) which, together with their ligand-func

203 (NCs) of lithiated group 14 elements (Z=Si, Ge, and Sn) is reported, which are Li4.4 Si, Li3.75 Si,

204 e substitutional incorporation of Sn into Si-Ge and yields materials with superior quality suitable f

205 which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si na

206 ion of heteromaterial combinations in the Si-Ge nanowire system.

207 vier group 14 and 15 elements to afford Si-, Ge-, As- or Sb-decorated POV structures (heteroPOVs).

208 reactivity of POVs functionalised with Si-, Ge-, As- or Sb-based heterogroups.

209 iO2) and SiO2/GeO2 into nanoporous Si and Si/Ge composite, respectively.

210 ntroducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW).

211 nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have very low therma

212 how that periodically arranged defects in Si/Ge H-SNW lead to a ~38% reduction of the already low the

213 re, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%.

214 t the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchica

215 sing path for improving the efficiency of Si/Ge-based SNW thermoelectrics.

216 ready low thermal conductivity of regular Si/Ge SNW.

217 ith respect to the N atom attached to the Si/Ge center has been found to be the most effective way of

218 ty and reactivity differences between the Si/Ge hydride sources in terms of a complex interplay among

219 rrelate well with the pi acidity of these Si/Ge centers.

220 eO, GaN, and ZnO on the tensile strain side, Ge, Si, and GaP on the compressive strain side.

221 th technique that comprises of only a single Ge growth step and a single anneal step.

222 Previous work has demonstrated that Sn, Ge, Cu, Bi, and Sb ions could be used as alternative ion

223 2 ) to 3.1 eV (ZnGeN2 ) by control of the Sn/Ge ratio.

224 raphic defect content of the resultant solid Ge films were analyzed by electron backscatter diffracti

225 metafilm using judiciously sized and spaced Ge nanobeams.

226 echanical oscillators and on-chip high speed Ge detectors based on the silicon CMOS platform.

227 he band gap and electronic structure of ST12-Ge (tP12, P43212) due to experimental limitations in sam

228 Phase-pure bulk samples of ST12-Ge were synthesized, and the structure and purity were v

229 vidence for the intrinsic properties of ST12-Ge, including the first optical measurements on bulk sam

230 Optical measurements indicate that ST12-Ge is a semiconductor with an indirect band gap of 0.59

231 es, by synthesis of (29)Si-enriched starting Ge-UTL frameworks and incorporation of (17)O from (17)O-

232 ial modulation doping in coherently strained Ge-SixGe1-x core-shell nanowires and a technique to dire

233 -assembled growth of highly tensile-strained Ge/In0.52Al0.48As (InAlAs) nanocomposites by using spont

234 e, the careful control of the supersaturated Ge layer allows us to obtain perfectly site-controlled,

235 hyl groups were bonded directly atop surface Ge atoms.

236 ectron chemical oxidation of the symmetrical Ge(0) compound K2[(boryl)GeGe(boryl)] and its subsequent

237 ethods are needed to controllably synthesize Ge nanoparticles.

238 t reaction in CCl3Br(l) formed Br-terminated Ge(111), as shown by the disappearance of the Ge-H absor

239 l cations A(+) (A = K, Rb), two tetrahedral [Ge(4)](4-) Zintl anions, and one anionic heterometallic

240 ed characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial stra

241 n a combined analysis herein, we report that Ge is potent in supressing the cathodic hydrogen evoluti

242 The Ge(II)-H bond in the latter compound has an unexpected r

243 The Ge-Se interatomic distances extracted from XAS data show

244 loying reaction between the Li metal and the Ge.

245 of 3 with two lone pairs of electrons at the Ge atom.

246 orbitals, with small contributions from the Ge 4p and In 5p orbitals.

247 part of the network, and PB arising from the Ge part of the network.

248 ribbons are self-aligning 3 degrees from the Ge<110> directions, are self-defining with predominantly

249 /0) clusters is absorbed endohedrally in the Ge cage.

250 non-equilibrium incorporation of Sn into the Ge nanowires can be understood in terms of a kinetic tra

251 tions of two further MeNC molecules into the Ge-C bond.

252 ratory insertion of the MeNC carbon into the Ge-C ligand bond.

253 the observed high crystalline quality of the Ge islands which is also associated with negligible Si-G

254 e(111), as shown by the disappearance of the Ge-H absorption in the FTIR spectra concomitant with the

255 We focus on the Ge on Si model system after pointing out the similaritie

256 ng any organic molecule dative bonded on the Ge(100)-2 x 1 surface studied to date.

257 At elevated growth temperatures the Ge reservoir in the planar, supersaturated WL is abruptl

258 ce is over 20 times more conductive than the Ge-C-Ge sequence.

259 Sn was distributed throughout the Ge nanowire lattice with no metallic Sn segregation or p

260 nd alternating current simultaneously to the Ge-based Schottky devices, where the rectification magne

261 e addition of an annealing step close to the Ge-Sn eutectic temperature (230 degrees C) during cool-d

262 o one of the six available Ge atoms with the Ge-C bond positioned radially to the Ge9 core.

263 (eta(2)-Ge(4))](6-) is a new isomer of the [(Ge(4))Zn(Ge(4))](6-) anion in Cs(6)ZnGe(8).

264 ations surrounded by the pi systems of three Ge dumbbells, further underlines this interpretation.

265 nic ligand (R) that runs from T = Si through Ge to Sn and from R = methyl through phenyl and p-styryl

266 Ti/Ge distribution in rhombohedral LiTi2-xGex(PO4)3 NASICON

267 resonance is an excellent probe to follow Ti/Ge disorder, as it is sensitive to the atomic scale envi

268 ed here, PO4 units are surrounded by four Ti/Ge octahedra, and then, five different components ascrib

269 analysis of detected components, a random Ti/Ge distribution has been deduced in next nearest neighbo

270 Structural addition of only 0.95% wt Fe to Ge-imogolite not only alleviated the toxicity observed i

271 V semiconductor systems, colloidal routes to Ge NPs with uniform sizes and shapes are much less matur

272 ectronegativity) that differ from C to Si to Ge.

273 The products contain the trifluorinated Ge(II) and Sn(II) anionic species which are stabilized b

274 The Zn-Ge cluster comprises two (Ge(4)) tetrahedra which are linked by a Zn atom, with on

275 -carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric pola

276 tching on the conductivity of the underlying Ge is measured using microwave impedance microscopy, cle

277 o surface bonding are critical to understand Ge nanowire synthesis and provide new guidelines for rat

278 In this way, this unique Ge modification technique enables a stable cycling perfo

279 studies of [(HCDippN)2B]2GeGe reveal a weak Ge-Ge double bond-the pi component of which contributes

280 ntains double four-membered-ring units where Ge is preferentially located, and fluoride anions are pl

281 ed by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitax

282 can form structurally abrupt interface with Ge(111).

283 ermittivity interlayer at the interface with Ge.

284 in 54 % yields bearing the Ge2(2+) ion with Ge in the oxidation state +1.

285 ficient) of the two end-members of the Si1-x Ge x alloy.

286 Here we show that, self-diffusion in Si1-x Ge x alloys as a function of temperature and Ge concentr

287 n9Cl5O68.(H2O)m]n (1, X = Si, m = 35; 2, X = Ge, m = 41), and the molecular tetramer Na6[{Na(mu-OH2)(

288 Silicon-germanium (Si(1-x)Ge(x)) has become a material of great interest to the ph

289 e that the resultant monocrystalline (InP)(y)Ge(5-2y) alloys with y = 0.3-0.7 are tetragonally strain

290 ompounds, leading to the creation of (InP)(y)Ge(5-2y) analogues.

291 n of photoluminescence suggests that (InP)(y)Ge(5-2y) may have important optoelectronic applications.

292 l stability phase diagram for the LnAuZ (Z = Ge, As, Sn, Sb, Pb, Bi) family of phases.

293 ic distortions of the one-dimensional zigzag Ge chains.

294 e(4))](6-) is a new isomer of the [(Ge(4))Zn(Ge(4))](6-) anion in Cs(6)ZnGe(8).

295 s, and one anionic heterometallic [(Ge(4))Zn(Ge(4))](6-) cluster per formula unit.

296 , Mg, Si, Cl, Ca, Ti, V, Cr, Fe, Ni, Cu, Zn, Ge, Se, Br, Sr, Mo, Ag, Cd, Sn, Sb, Te, Ba, W, Pt, Hg, T

297 we report a novel orange zinc germanate (Zn-Ge-O) with a chromophore-like structure, by which the ab

298 om the enhanced light harvest, the orange Zn-Ge-O demonstrates superior capacity for solar-driven hyd

299 The Zn-Ge cluster comprises two (Ge(4)) tetrahedra which are li

300 ds (Ca3Ti2O7, Ca3Mn2O7 and (Ca/Sr/Ba)3(Sn/Zr/Ge)2O7).