ライフサイエンスコーパス: Si

1 Si NWFETs were applied for quantitative detection of PSA

2 Si of haploid PV presents cellular infectivity of a sing

3 [Si(II)(Xant)Si(II)]Ni(eta(2)-1,3-cod) is a strikingly ef

4 Si-O bond length shows first an increase due to the four

5 ) in GaP thin films grown on different (001) Si substrates with different offcuts.

6 onomers (5 Si atoms/molecule) and dimers (10 Si atoms/molecule) dominated the mass spectra of aerosol

7 while ring-opened species (neither 5 nor 10 Si atoms/molecule) dominated the mass spectra of aerosol

8 ts of the periodic table, including Group 14 Si, Ge, Sn, and Pb.

9 The tetraphosphadisilene {(Mes)2 P}2 Si=Si{P(Mes)2 }2 (7) is readily isolated from the reacti

10 A sample of a (28)Si-enriched single crystal produced to test the possibil

11 ing a perfect one-kilogram sphere from a (28)Si-enriched single crystal.

12 licon single crystals highly enriched in (28)Si recently produced for the upcoming redetermination of

13 vide direct evidence of shared covalent (29) Si-O-(29) Si bonds between intermediate nanolayered sili

14 t evidence of shared covalent (29) Si-O-(29) Si bonds between intermediate nanolayered silicate moiet

15 DNP-enhanced 2D (29)Si{(29)Si} J-mediated NMR analyses of calcined Si-SSZ-70

16 ization, of (17)O- and doubly (17)O- and (29)Si-enriched UTL-derived zeolites, by synthesis of (29)Si

17 .7%) establish the through-covalent-bond (29)Si-O-(29)Si connectivities of distinct Si sites in the f

18 ent around the silicon atoms is given by (29)Si nuclear magnetic resonance analysis.

19 onuclear correlation (HETCOR, X = (13)C, (29)Si) experiments] was performed on samples subjected to d

20 shielded (29)Si NMR chemical shift (delta(29)Si = -155) and is firmly established by its experimental

21 nalyses of calcined Si-SSZ-70 at natural (29)Si isotopic abundance (4.7%) establish the through-coval

22 blish the through-covalent-bond (29)Si-O-(29)Si connectivities of distinct Si sites in the framework.

23 ed UTL-derived zeolites, by synthesis of (29)Si-enriched starting Ge-UTL frameworks and incorporation

24 This is indicated by its highly shielded (29)Si NMR chemical shift (delta(29)Si = -155) and is firmly

25 DNP-enhanced 2D (29)Si{(29)Si} J-mediated NMR analyses of calcined Si-SSZ-70 at nat

26 gh-quality and large-scale fabrication of 2D Si remains challenging.

27 tion [(CHO-(CH2)3-CHO) and APTES; NH2-(CH2)3-Si(OC2H5)3].

28 To this aim, the (30)Si mole fraction of a sample of the new material was mea

29 The x((30)Si) = 5.701 x 10(-7) mol mol(-1) estimate is close to th

30 Monomers (5 Si atoms/molecule) and dimers (10 Si atoms/molecule) dom

31 Electrodeposition of Si films from a Si-containing electrolyte is a cost-effective approach f

32 (67.0 nm)/Cu (>100.0 nm) was deposited on a Si or K9-glass substrate by magnetron sputtering.

33 e corroborating the proposed formation of a (Si=O)-Ni pi-complex at low temperature.

34 of the mono- and poly-Si, CIGS, CdTe, and a-Si devices, the SWCNT devices would need a lifetime of 2

35 de for hybrid radial-junction ZnO nanowire/a-Si:H p-i-n thin-film solar cells.

36 re demonstrated only in the application of a-Si:H solar cells, the ideas are able to extend to applic

37 circuits consisting of amorphous silicon (a-Si) waveguides on an epitaxial barium titanate (BaTiO3,

38 itation in hydrogenated amorphous silicon (a-Si:H) by scanning ultrafast electron microscopy (SUEM).

39 5microm(2) hydrogenated amorphous silicon (a-Si:H) photosensors below the microfluidic chip.

40 Amorphous silicon (a-Si:H) solar cells have been constructed on nanoholes arr

41 the biogeochemical cycling of silicic acid [Si(OH)4] on the west Antarctica Peninsula margin, a regi

42 r ringwoodite (gamma-Mg2SiO4), additionally, Si(4+) vacancies are formed, even at a water content as

43 he unaffected SiO2 layer toward the adjacent Si/SiO2 interface.

44 nd the tensile properties of the recycled Al-Si alloys due to the presence of the Fe containing inter

45 trength due to addition of Cu, in Fe-rich Al-Si alloys is promising from the alloy recyclability poin

46 transform the beta-Al9Fe2Si2 phase in the Al-Si-Fe system.

47 present thermodynamic description of the Al-Si-Fe-Cu system needs finer tuning to accurately predict

48 referentially occurred as nanogoethite or Al/Si-substituted goethite.

49 ce of the parasitic channel formation at AlN/Si interfaces due to increased surface acceptor densitie

50 t-effective high power device paradigm on an Si CMOS platform are demonstrated.

51 e extraction fluid leached additional Al and Si from the method-prescribed borosilicate glass vessels

52 Aluminum and Si were the major elements dissolved from NIST 2701, and

53 nanocomposite films with the different C and Si contents are synthesized by the reactive-magnetron-sp

54 n of organic complexes containing Si-O-C and Si-O-Mg bonds.

55 -element determination of Cu, Zn, Mn, Mg and Si in beverages and food supplements with successful res

56 o a significant proportion of coupled Mg and Si vacancies are present.

57 t's effluent or the molar ratios of Si/N and Si/P in effluent.

58 The Si=O and Si=N moieties in 2 and 3, respectively, show remarkable

59 an inhibitory complex, where both the Sa and Si sites are occupied by Trp.

60 with results of previous studies of SiC and Si, are analyzed with a model of radiation damage format

61 The main absorption lines for Cu, Zn and Si and secondary lines for Mn and Mg were selected to ca

62 [Si(II)(Xant)Si(II)]Ni(eta(2)-1,3-cod) and [Si(II)(Xant)Si(II)]Ni(PMe3)2 were synthesized and fully

63 eld because it provided more plant-available Si, particularly during the reproductive and ripening ph

64 ygen lone pair and of the highly polar axial Si-O bond.

65 sed on Si have long been of interest because Si is earth-abundant, inexpensive, and non-toxic.

66 The SBHs of the better behaved Si/silicide interfaces can be used to benchmark the beha

67 reaction is neither C-H activation nor beta-Si elimination but either ethylene loss or reductive eli

68 Results show that, for both Si and SiC, collision cascades are mass fractals with fr

69 ) sites in 6r, favored at low values of both Si:Al and Cu:Al ratios, inhibit the material performance

70 the mono-bridged (Si(H)SiH) and di-bridged (Si(H2 )Si) isomers, was initially formed in the gas-phas

71 ich is in equilibrium with the mono-bridged (Si(H)SiH) and di-bridged (Si(H2 )Si) isomers, was initia

72 genic additions of N or P are not matched by Si.

73 that transfer electrophilicity to silicon by Si-H activation.

74 ures and electronic properties of partial C, Si and Ge decorated graphene were investigated by first-

75 e thermal and photobehavior of XH2OO (X = C, Si, Ge, and Sn) that serve as precursors for dioxiranes,

76 determining, but the C-H bond cleavage and C-Si bond-forming steps together influence the enantiosele

77 range is known to hinder the efficiency of c-Si cell.

78 ld, which strengthens asymmetry in organic-c-Si heterojunction solar cell through molecule alignment

79 chieve this including crystalline silicon (c-Si) solar cell.

80 periments support a mechanism in which the C-Si bond is formed through silyl radical addition to the

81 The C-Si bonds in the enantioenriched dihydrobenzosiloles were

82 ow a very strong electric field across the c-Si/a-B interface systems where the charge transfer occur

83 in aromatic heterocycles were converted to C-Si bonds by reaction with hydrosilanes under the catalyt

84 combine promising perovskite material with c-Si solar cell.

85 When the C/Si content ratio is 2:2, the TiSiCN nanocomposite film i

86 dicalcium silicate phases were absent and Ca-Si-H was precipitated (CaCO3 was also present under aera

87 d some V was incorporated into neo-formed Ca-Si-H.

88 essibilities of the a- and b-axes and the Ca/Si.

89 {(29)Si} J-mediated NMR analyses of calcined Si-SSZ-70 at natural (29)Si isotopic abundance (4.7%) es

90 sing time-of-flight MS with perfluoro coated Si-GLAD SALDI, by comparison to tabulated data.

91 Ds) with ta-C thin films coated on Ti-coated Si-substrates.

92 I)(Xant)Si(II)] as well as its Ni complexes [Si(II)(Xant)Si(II)]Ni(eta(2)-1,3-cod) and [Si(II)(Xant)S

93 ransistors (NW FETs) with Schottky contacts (Si-Ti).

94 he formation of organic complexes containing Si-O-C and Si-O-Mg bonds.

95 ing for the further development of low-cost, Si wafer-based IREs for electrochemical ATR-SEIRAS appli

96 rmance to commercially available crystalline Si and III-V photodetectors.

97 performance characteristics for crystalline Si photoanodes.

98 however, remain unknown even for crystalline Si.

99 ubstrate to form a dense film of crystalline Si.

100 Impurities in the deposited Si film are controlled at low concentrations (both B and

101 A p-n junction fabricated from the deposited Si film exhibits clear photovoltaic effects.

102 osed to elevated As in response to different Si-rich soil amendments including rice husk, rice husk a

103 s the first Si-metalated iminosilane, [DippN=Si(OSiMe3 )Ni(Cl)(NHC)2 ] (3), in a rearrangement cascad

104 d (29)Si-O-(29)Si connectivities of distinct Si sites in the framework.

105 taining functionalized E=E multiple bonds (E=Si, Ge, Sn, Pb) because of their potential to exhibit no

106 the functionalized silica nanoparticles ((f)Si NP) were then integrated with Sphingomonas sp.

107 Biohybrid of Sphingomonas sp.-(f)Si NP was immobilized on the wells of microplate and ass

108 oves that after interaction of cells with (f)Si NP, improved the sensitivity and stability of the bio

109 ing methodologies, specifically for B-(18)F, Si-(18)F, Al-(18)F, and iodine (III)-mediated radiofluor

110 th's most abundant mineral, (Mg,Fe,Al)(Al,Fe,Si)O3 bridgmanite (also known as silicate perovskite), h

111 reaction zone, there are metallic Fe and Fe-Si beads, aluminous spinel rinds on the Al-Cu-Fe alloys,

112 d activate H2 reversibly to afford the first Si(II)-stabilized mononuclear dihydrido Ni complex chara

113 Pr)NC(Me)]2 ) with N2 O furnishes the first Si-metalated iminosilane, [DippN=Si(OSiMe3 )Ni(Cl)(NHC)2

114 ased up to 110mgL(-1) for Mg, 200mgL(-1) for Si and 13mgL(-1) for Zn.

115 cies in bridging tetrahedra sites and Al for Si substitution.

116 g a cost-effective manufacturing process for Si solar cells based on electrodeposition.

117 Surface-functionalized Si nanoparticles (SiNPs) dissolved in styrene and hexade

118 racterization of the cluster anions [Ge18Pd3{Si(i)Pr3}6](2-) (1) with a core of face-fused twinned ic

119 reaction with the bis-silylated cluster [Ge9{Si(TMS)3}2](2)(-) yields the novel cluster compound [Ge9

120 ) groups and the tris-silylated cluster [Ge9{Si(TMS)3}3](-) yield the novel neutral cluster compounds

121 Reactions of silylated clusters [Ge9{Si(TMS)3}3](-) or [Ge9{Si(TMS)3}2](2-) with dialkylhalop

122 2)(-) yields the novel cluster compound [Ge9{Si(TMS)3}2P(t)Bu2](-) (3).

123 charge neutral zwitterionic compounds [(Ge9{Si(TMS)3}2)(t)Bu2P]M(NHC(Dipp)) (M: Cu, Ag, Au) (4-6), i

124 eld the novel neutral cluster compounds [Ge9{Si(TMS)3}3PR2] (R: Cy (1), (i)Pr (2)) with discrete Ge-P

125 lylated clusters [Ge9{Si(TMS)3}3](-) or [Ge9{Si(TMS)3}2](2-) with dialkylhalophosphines R2PCl (Cy, (i

126 phosphine (t)Bu2PCl does not react with [Ge9{Si(TMS)3}3](-) due to steric crowding.

127 dge misfit dislocations (MDs) form in a GeSi/Si(001) film has been a long standing issue.

128 amily of materials (WHM with W = Zr, Hf; H = Si, Ge, Sn; M = O, S, Se, Te) with identical band topolo

129 nd contains two bridging Celeft harpoon-up H-Si interactions in both 1 and 2.

130 no-bridged (Si(H)SiH) and di-bridged (Si(H2 )Si) isomers, was initially formed in the gas-phase react

131 CIT-9 has the highest Si/Al ratio reported for GME, and along with its good po

132 tion of the NHC-iodosilicon(I) dimer [IAr (I)Si:]2 (IAr =:C{N(Ar)CH}2 ) with 4 equiv of IMe (:C{N(Me)

133 e show that SiO2 first undergoes a change in Si-O coordination number from fourfold to sixfold betwee

134 longest coherence times reported to date in Si/SiGe gate-defined quantum dots.

135 A combination of the decrease in Si-O-Si bond angle and an increase in the carbon incorpo

136 ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 de

137 b substrate to a variety of hosts, including Si, polydimethylsiloxane, and metal-coated substrates.

138 tion of CaSiO3 , an abundant and inexpensive Si source soluble in molten salts, at a low temperature

139 clusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to

140 ge transfer occurs mainly from the interface Si atoms to the neighboring B atoms.

141 xample of the transmutation of Al atoms into Si atoms by electron donation.

142 ction of alpha-diazo carbonyl compounds into Si-H and S-H bonds was developed.

143 The vertical memory is Si compatible, easy to fabricate, and in principle can b

144 o)(silyl)nickel(II) complex 3, {[cat((TMS) L)Si](Cl)Ni<--:BH(NHC)2 }, via the cleavage of two B-O bon

145 bis(N-heterocyclic silylene)xanthene ligand [Si(II)(Xant)Si(II)] as well as its Ni complexes [Si(II)(

146 full-cell battery that contains a lithiated Si/graphene anode paired with a selenium disulfide (SeS2

147 They consist of densely packed LixM (M = Si, Sn, or Al) nanoparticles encapsulated by large graph

148 n donor character once the reagent R3MH (M = Si, Ge, Sn) enters the ligand sphere.

149 tion showed that those anionic frameworks-M2[Si(C16H10O4)1.5], where M = Li, Na, K and C16H10O4 is 9,

150 ation of conduction band minimum between Mg2 Si and the isostructural phase Na2 S is explained in ter

151 ctures of the antifluorite-type compound Mg2 Si is described in which a sublattice of short cation-ca

152 Since Mg2 Si shows n-type conductivity without intentional carrier

153 Thin, micromachined Si wafers, designed as internal reflection elements (IRE

154 The laser-modified Si has a different optical index than unmodified parts,

155 Compared to monocrystalline Si (mono-Si), the environmental impacts from 1% SWCNT was approxi

156 Compared to monocrystalline Si (mono-Si), the environmental impacts from 1% SWCNT wa

157 proof of concept of the use of monodisperse Si and C nanocomposite spheres toward practical lithium-

158 Our monolithic Si-on-BTO waveguides establish a new sensor platform tha

159 cation of this coating to photovoltaic p(+)n-Si junctions yields best reported performance characteri

160 With a p-Si/SiO2/n-Si structure, our memristor exhibits repeatable unipolar

161 At pH = 7 with 3 Sun illumination, the n-Si/TiO2/C/CNT/[1+1(O)] electrodes exhibited current dens

162 anic nitrogen and uptake ratios of N/P and N/Si increased significantly during the bloom.

163 Interestingly, Q(4) (nAl) Si speciation measured by solid-state NMR can only be mo

164 tudy of thermal transport in nanocrystalline Si-based materials using a variance-reduced Monte Carlo

165 ntal thermal conductivity of nanocrystalline Si [Wang et al.

166 Silica nanoparticles (Si NP) were thus functionalized with polyethyleneimine (

167 a3 N5 nanotube photoanode and a GaN nanowire/Si photocathode with high photocurrents (>5 mA cm(-2) ).

168 ainable method to produce silicon nanowires (Si NWs) in bulk quantities through the direct electroche

169 s as an example, we demonstrate that NiPd-NG-Si (Si=silicon wafer) can function as a catalyst and sho

170 Considering a 260 nm Si-thick Silicon-on-insulator platform, we numerically d

171 3) and 10(-5) torr on Pt (200 nm)/Ti (45 nm)/Si (001) substrates using pulsed laser deposition.

172 of Cu as well as framework elements (Al, O, Si) in both fresh and aged Cu-SSZ-13 and Cu-ZSM-5 are de

173 on of the Ni center to the ether moiety, R-O-Si, of the vinylsilane somewhat decreases the turnover f

174 t cell, indicating the distribution of Si(-O-Si)4-n (-O-Al)n species is spatially biased as opposed t

175 A combination of the decrease in Si-O-Si bond angle and an increase in the carbon incorporatio

176 on irradiation caused a decrease in the Si-O-Si bond angle of silica, similar to the effects of appli

177 is occurs mainly through tilting of the Si-O-Si dihedral angle rather than shortening of the Si-O bon

178 ree Si-O-H groups in place of the three Si-O-Si linkages.

179 The addition of Si to paddy soil can decrease As uptake by rice but how

180 ene, germanene and stanene (2D allotropes of Si, Ge, and Sn), lends itself as a platform to probe Dir

181 Fe atom to the sp(3) -like dangling bond of Si atoms in the linear silicene domain boundaries.

182 rtant class of compounds, their catalysis of Si-O bond hydrolysis and condensation was investigated w

183 Such hybrid SEIs composed of Si-interlinked OOCOR molecules that host LiCl salt exhib

184 We synthesize molecular wires consisting of Si-O repeat units and measure their conductance through

185 re we demonstrate THz laser pulse control of Si:P orbitals using multiple orbital state admixtures, o

186 al unit cell, indicating the distribution of Si(-O-Si)4-n (-O-Al)n species is spatially biased as opp

187 However, the most remarkable effect of Si is the reduction in the intensities of a number of se

188 e symptom expression is due to the effect of Si on some components of host resistance, including incu

189 Electrodeposition of Si films from a Si-containing electrolyte is a cost-effe

190 SAXS measurements of the structure factor of Si surfaces evolving during 1 keV Ar+ ion bombardment.

191 an affect rice uptake of As, the kinetics of Si dissolution and nutrient availability can also affect

192 ber of Si-O bonds and an increased number of Si-C and C-O bonds.

193 Irradiation results in a decreased number of Si-O bonds and an increased number of Si-C and C-O bonds

194 ical barrier formed by the polymerization of Si beneath the cuticle and in the cell walls was the fir

195 dly strategy for the practical production of Si at lower temperatures can be applied to other molten

196 ds to large-scale and low-cost production of Si nanosheets (SiNSs) with thickness approximately 4 nm

197 he diversification of the bulk properties of Si and Ge, in complete agreement with the available expe

198 ater plant's effluent or the molar ratios of Si/N and Si/P in effluent.

199 Al73Ni19Fe4Cu2Mg0.6Mo0.4Mn0.3 with traces of Si and Cr were found along the recovered interface betwe

200 Here, we have created two types of Si-based metasurfaces to steer visible light to a large

201 oth in-chain and chain-end incorporation of -Si(OR)3 groups whose ratios depend on temperature and et

202 rystalline thermoelectric materials based on Si have long been of interest because Si is earth-abunda

203 ve Co3O4/Co(OH)2 biphasic electrocatalyst on Si by means of operando ambient-pressure X-ray photoelec

204 GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, a

205 ) of about 0.03%, for a deep UV-LED grown on Si substrate.

206 microm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1

207 Growing III-V semiconductor materials on Si substrates for opto-electronic applications is challe

208 brium phase in a hole-doped bilayer of Sn on Si(111).

209 or-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off

210 .1 x 10(7) cm(-2) achieved to date in GaN-on-Si is demonstrated.

211 highly mismatched systems such as in GaN-on-Si.

212 that had been deposited by drop casting onto Si electrodes coated with 60 nm of amorphous TiO2 and 20

213 or impurities such as organic matter, Al or Si, persisted under suboxic-oxic conditions in the flood

214 Unexpectedly, the pre-organized Si-B separation in 1 enables a metal-free dehydrogenatio

215 With a p-Si/SiO2/n-Si structure, our memristor exhibits repeatabl

216 n of fascinating compounds containing P-C, P-Si, P-Ge, and P-P bonds using a single step with a base-

217 brid system, composed of a single-junction p-Si and a RED stack, successfully enables solar water spl

218 Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide waveleng

219 ode (UV-LED) device using this AlN/patterned Si.

220 ity AlN template on a micro-circle-patterned Si substrate by using NH3 pulsed-flow multilayer AlN gro

221 The dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is also covered.

222 tal normalized impacts of the mono- and poly-Si, CIGS, CdTe, and a-Si devices, the SWCNT devices woul

223 f highly luminescent, nanocrystalline porous Si from the reaction of V2 O5 in HF(aq) as Ox1 and H2 O2

224 successful electrodeposition of high-quality Si films from a CaCl2 -based molten salt.

225 wo equivalents of a silyl (pseudo)halide, R3 Si-X (R=aryl, alkyl, H; X=Cl, Br, I, OTf, SPh), cleanly

226 enabled by the easily installable/removable Si-auxiliaries.

227 By implementing reversible Si-O chemistry for the crystallization of covalent organ

228 d the size of the NP increased 1.2 times (Sf/Si ratio) in the presence of 10% sucrose after freeze dr

229 In general, plants with a high root or shoot Si concentration are less prone to pest attack and exhib

230 an example, we demonstrate that NiPd-NG-Si (Si=silicon wafer) can function as a catalyst and show ma

231 Silicon (Si) based complementary metal-oxide semiconductor (CMOS)

232 Silicon (Si) plays a pivotal role in the nutritional status of a

233 ase reaction of ground-state atomic silicon (Si) with silane (SiH4 ) under single-collision condition

234 In large rivers, the ratios of silicon (Si)/nitrogen (N)/phosphorus (P) have changed dramaticall

235 taxial germanium (Ge) thin films on silicon (Si) wafers has been achieved over large areas with aqueo

236 an increasing demand for realizing a simple Si based universal memory device working at ambient temp

237 he local thermal conductivity along a single Si nanowire can be tuned to a desired value (between cry

238 nning on insulating substrates such as SiO2 /Si.

239 low refractive index SiON film on both SiO2/Si and borosilicate glass substrate.

240 o low thermal mass, while the sensor on SiO2/Si reveals the lowest one.

241 /SnS2 vertical bilayer p-n junctions on SiO2/Si substrates, with the lateral sizes reaching up to mil

242 sures to accommodate the higher than sixfold Si-O coordination.

243 Soluble Si(IV) -O anions generated from solid SiO2 are electrode

244 ation protocol for the construction of C(sp)-Si bonds in a single step.

245 Subsequently, the synthesized Si nanosheets evolve from amorphous to nanocrystalline t

246 as a monodentate, as well as on tetrahedral Si sites as an edge-sharing bidentate.

247 substituted by four heteroatoms (other than Si) is described.

248 We demonstrate that Si(OH)4 cycling through the Holocene alternates between

249 The Si nanowire product can be used as high-capacity Li-ion

250 The Si site offers a novel target site for allosteric inhibi

251 The Si=O and Si=N moieties in 2 and 3, respectively, show re

252 yl group and the angle of rotation about the Si-CPh bond (axi and axo denote the Ph group lying in or

253 We determine the Si+ ion to SiV centre conversion yield to be approximate

254 and inductively coupled plasma etching, the Si substrate was prepared with very high pattern density

255 previous studies, however, have examined the Si load of a large wastewater plant's effluent or the mo

256 hat ion irradiation caused a decrease in the Si-O-Si bond angle of silica, similar to the effects of

257 ctrophilic insertion of the nitride into the Si-H bond.

258 Heterolysis of the Si-H bond, deprotonation of the heteroarene, addition of

259 larger polarization of the Si-Ph than of the Si-O bond in the Phax conformer and additional destabili

260 dihedral angle rather than shortening of the Si-O bond, and consequently there is no correlation betw

261 ance decay is intrinsic to the nature of the Si-O bond.

262 b-axis occurs mainly through tilting of the Si-O-Si dihedral angle rather than shortening of the Si-

263 phenyl group by a larger polarization of the Si-Ph than of the Si-O bond in the Phax conformer and ad

264 s the differing interaction strengths of the Si/S 3s orbitals with the cation levels, with the more c

265 ight the powerful synergistic effects of the Si:-->Ni moiety in the breaking of incredibly strong B-O

266 tical residue, F270, to glycine perturbs the Si site, allowing structural determination of an inhibit

267 In silico studies suggested that the Si horizontal lineSi bond in 2 is described as very weak

268 a novel mode of H2 activation, in which the Si(II) atoms of the [Si(II)(Xant)Si(II)] ligand are invo

269 onic silylene ring (3) via insertion of the "Si(I)2" unit of 2 into the olefinic C-H bond of the imid

270 ctivation, in which the Si(II) atoms of the [Si(II)(Xant)Si(II)] ligand are involved in the key step

271 This Si/B exchange approach has been successfully applied to

272 UV-vis studies of this Si(IV) compound indicated a facile transformation back t

273 OH group is missing, leaving a nest of three Si-O-H groups in place of the three Si-O-Si linkages.

274 of three Si-O-H groups in place of the three Si-O-Si linkages.

275 emiconductor type photocatalysts, such as Ti-Si molecular sieves and carbon quantum dots (CQDs), are

276 nd indicated a facile transformation back to Si(II) at elevated temperatures, further supported by de

277 a better semiconductor material compared to Si for the practical implementation of the proposed opto

278 ive amination of SiNx surface as compared to Si surface.

279 eveloped to catalytic O-transfer from N2O to Si-H bonds.

280 change of the 1,3-COD ligand by PMe3 led to [Si(II)(Xant)Si(II)]Ni(PMe3)2, which could activate H2 re

281 cture, which is changed by varying the Ca-to-Si molar ratio.

282 B-O bonds and simultaneous formation of two Si-O bonds.

283 e latter mediates frustrated Lewis pair type Si-H bond activation of the silane substrates.

284 a promising general method to produce viable Si-C composites for Li-ion batteries.

285 enerated by homolytic cleavage of a weakened Si-H bond of a hypercoordinated silicon species as detec

286 lements as He, C, Mg, Al are depleted, while Si and P are enhanced.

287 This study demonstrates that while Si-rich amendments can affect rice uptake of As, the kin

288 ond to elevated As when soil is amended with Si-rich materials is unresolved.

289 For composites with Si and Ge microinclusions we obtain reflectance efficien

290 own for heavier counterparts, disilenes with Si horizontal lineSi bonds.

291 in HF(aq) as Ox1 and H2 O2 (aq) as Ox2 with Si powder and wafers.

292 vealed that many plant species supplied with Si have the phenylpropanoid and terpenoid pathways poten

293 mensional (2D) crystals termed 2D-Xenes (X = Si, Ge, Sn and so on) which, together with their ligand-

294 denote the Ph group lying in or out of the X-Si-CPh plane) contribute to the equilibrium.

295 cyclic silylene)xanthene ligand [Si(II)(Xant)Si(II)] as well as its Ni complexes [Si(II)(Xant)Si(II)]

296 n which the Si(II) atoms of the [Si(II)(Xant)Si(II)] ligand are involved in the key step of H2 cleava

297 I)] as well as its Ni complexes [Si(II)(Xant)Si(II)]Ni(eta(2)-1,3-cod) and [Si(II)(Xant)Si(II)]Ni(PMe

298 [Si(II)(Xant)Si(II)]Ni(eta(2)-1,3-cod) is a strikingly efficient prec

299 t)Si(II)]Ni(eta(2)-1,3-cod) and [Si(II)(Xant)Si(II)]Ni(PMe3)2 were synthesized and fully characterize

300 e 1,3-COD ligand by PMe3 led to [Si(II)(Xant)Si(II)]Ni(PMe3)2, which could activate H2 reversibly to