ライフサイエンスコーパス: Sn

1 Sn inclusion substantially influences the band-gap, crys

2 Sn was distributed throughout the Ge nanowire lattice wi

3 Sn-mediated radical transformation of biphenyl aryl acet

4 Cu nanoparticles alloyed with 1% Sn, 5% Ag, 5% Ni and 30% Ni had electrical conductivitie

5 )Br, (89)Zr, (90)Nb, (99m)Tc, (111)In, (117m)Sn, (119)Sb, (123)I, (125)I, (195m)Pt, and (201)Tl by me

6 e characterization of natural-abundance (119)Sn-Beta with excellent signal-to-noise ratios in <24 h.

7 tural abundance Sn without the need for (119)Sn isotopic enrichment.

8 A variety of spectroscopic methods ((119)Sn-NMR, magnetic circular dichroism (MCD), electron para

9 Without DNP, no (119)Sn resonances were detected after 10 days of continuous

10 oscopic characterization (in particular (119)Sn NMR and UV-vis spectroscopy), physical properties and

11 spectroscopy, solution and solid-state (119)Sn NMR spectroscopy, far-infrared and X-ray absorption s

12 onance (ssNMR) of samples enriched with (119)Sn isotopes are the only reliable methods to verify fram

13 mulated [NaO4 (BuSn)12 (OH)3 (O)9 (OCH3 )12 (Sn(H2 O)2 )] (beta-NaSn13 ).

14 be achieved by 1 mL of thiol with Cu(OAc)2, Sn(OAc)4, and Zn(acac)2 metal salts to synthesize the CZ

15 ompounds (Ca3Ti2O7, Ca3Mn2O7 and (Ca/Sr/Ba)3(Sn/Zr/Ge)2O7).

16 system with other inert ions such as Sb(3+), Sn(4+), Zn(2+) also gave chalcogels that were photocatal

17 common Pd3-face, i.e., [((i)Pr3Sn)3Ge9Pd3Ge9(Sn(i)Pr3)3](2-) that resembles but is not isoelectronic

18 are Li4.4 Si, Li3.75 Si, Li4.4 Ge, and Li4.4 Sn.

19 ), resulting in the efficient formation of a Sn+1 particle.

20 orus in sealed ampoules in the presence of a Sn/SnI4 catalyst mixture has provided bulk black phospho

21 n film of red phosphorus in the present of a Sn/SnI4 catalyst.

22 bandgap Ge(1-x)Sn(x) alloy nanowires, with a Sn incorporation up to 9.2 at.%, far in excess of the eq

23 hedral matryoshka clusters of A@B12@A20 (A = Sn, Pb; B = Mg, Zn, Cd), which possess large HOMO-LUMO g

24 dem devices or near infrared (NIR)-absorbing Sn-containing perovskites.

25 ites containing ~2 wt % of natural abundance Sn without the need for (119)Sn isotopic enrichment.

26 nima on the potential energy surface for all Sn F4n+2 systems studied (n=2-9) and for selenium analog

27 bust framework with rich voids, which allows Sn to alleviate its mechanical strain without forming cr

28 lkynes and opens a convenient route to alpha-Sn-substituted naphthalenes, a unique launching platform

29 Also, Sn(4+) ions are comparable in size to the Cu(+) ions, wh

30 Ca(2+), Cd(2+), Zn(2+), Ni(2+), Co(2+), and Sn(2+) are also studied, and the resulting sizes of the

31 other Lewis acids (such as B(3+), Al(3+) and Sn(4+)) and can be applied to other 2D materials (for ex

32 Ba(2+), Co(2+), Cu(2+), Ni(3+), Bi(3+), and Sn(2+)) except Fe(2+), which was found to interfere with

33 r CO and HCOO(-) over polycrystalline Ag and Sn.

34 om all other elements except for Mo, Al, and Sn.

35 , Ca, Mn, Fe, Cu, Zn, Br, Rb, Sr, Pb, As and Sn.

36 position on model electrode surfaces (Au and Sn) was investigated by in situ attenuated total reflect

37 reduced 2Sn(III)Br5(2-) to Sn(IV)Br5(-) and Sn(II)Br5(3-); (4) one-electron reduction of Sn(III)Br5(

38 We demonstrate that some metals (Fe, Co, and Sn) inhibit the sintering of the active Pd metal phase,

39 t dataset from the paired Cu-Au (copper) and Sn-W (tin) magmatic belts in Myanmar.

40 Using Sn-3.0Ag-0.5Cu/Cu and Sn-0.7Cu/Cu as examples, we show that the interfacial Cu

41 g and Ta and approximately 5% of Al, Cu, and Sn.

42 R energies are affected by both electron and Sn concentrations, with composition yielding a broader p

43 tion and storage time, especially for Fe and Sn.

44 The wide Si, Ge and Sn transparencies allow the use of binary and ternary al

45 en to the heavy group-IV elements Si, Ge and Sn.

46 f lithiated group 14 elements (Z=Si, Ge, and Sn) is reported, which are Li4.4 Si, Li3.75 Si, Li4.4 Ge

47 d photobehavior of XH2OO (X = C, Si, Ge, and Sn) that serve as precursors for dioxiranes, an importan

48 ne and stanene (2D allotropes of Si, Ge, and Sn), lends itself as a platform to probe Dirac-like phys

49 oducts contain the trifluorinated Ge(II) and Sn(II) anionic species which are stabilized by interioni

50 ne-pair electron density on both Sb(III) and Sn(II) to the POM.

51 to their different chemical natures, Li and Sn atoms tend to segregate into Li-rich and Sn-rich regi

52 such as: Cd, Pb, As, Cu, Cr, Ni, Fe, Mn and Sn in different canned samples (cardoon, tuna, green and

53 eactions containing elemental Mg, Al, Mn and Sn particles.

54 ace interaction was discovered between O and Sn in the fragmentation as a specific transition state s

55 relation density distribution, showed Pb and Sn segregation in the soap-affected areas.

56 nseen side-reactions of propagating R(*) and Sn(*) radicals with the solvent (notably, benzene!) or s

57 Sn atoms tend to segregate into Li-rich and Sn-rich regions, creating substantial inhomogeneity on t

58 essfully applied for determination of Sb and Sn in beverages.

59 The LOD and LOQ of Sb and Sn ranged from 1.2to 2.5ngL(-1) and 4.0 to 8.3ngL(-1), r

60 The concentration of Sb and Sn were quantified using ICP-OES.

61 rom 2.1% to 2.5% and 3.9% to 4.7% for Sb and Sn, respectively.

62 anic solvents for preconcentration of Sb and Sn.

63 of species of the types Sn(boryl)2.NH3 and [Sn(boryl)2(NH2)](-) and their onward conversion to the f

64 the first cationic phosphonio-stannylene [Ar*Sn(PtBu3 )](+) .

65 activity of tin-containing zeolites, such as Sn-Beta, is critically dependent on the successful incor

66 ity phase diagram for the LnAuZ (Z = Ge, As, Sn, Sb, Pb, Bi) family of phases.

67 iquid nitrogen is studied using a Si-10 at % Sn sintered electrode.

68 silicon crystals (~500 nm) decorated by beta-Sn spheroids is achieved if the current flowing through

69 nduced by electromigration in a Pb-free beta-Sn based solder joint by synchrotron polychromatic X-ray

70 ndaries suggests that grain rotation in beta-Sn, unlike grain rotation in high melting temperature me

71 Direct imaging confirms that the beta-Sn nucleates at/near the Cu6Sn5 layer in Sn-3.0Ag-0.5Cu/

72 from molten Field's metal (Bi-In-Sn) and Bi-Sn alloys.

73 o extract the bound Pb(VI) but not the bound Sn(IV).

74 Tetramer 3 comprises bridging Sn(II) ions with [B-SbW9O33](9-) units and exhibits two

75 de originate from the combination of the Bu3 Sn-mediated TDG (traceless directing group) cascade tran

76 oduct as a result of Lewis acid catalysis by Sn(2+).

77 RE = Pr, Nd, Sm, and Gd) were synthesized by Sn flux.

78 ated compounds of boron and group-14 atoms C-Sn in the last decade is presented.

79 d the onset of lithiation in a high-capacity Sn anode and visualized the enrichment of Li atoms on th

80 cally reduced SnO2 porous nanowire catalyst (Sn-pNWs) with a high density of grain boundaries (GBs) e

81 Fe, Ni, Cu, Zn, Ge, Se, Br, Sr, Mo, Ag, Cd, Sn, Sb, Te, Ba, W, Pt, Hg, Tl, U) which are being explor

82 Cr, Mn, Co, Ni, Cu, Zn, As, Se, Sr, Mo, Cd, Sn, Sb, Ba, Hg, Pb, Bi, Th, and U) in green coffee sampl

83 a, K, V, Ni, Co, Cu, Zn, Ga, As, Se, Mo, Cd, Sn, Sb, Ba, W, and Pb), including air toxics were enrich

84 Single-unit-cell Sn-MFI, with the detectable Sn uniformly distributed and

85 thylene to give Ar((i)Pr4)(CH2CH3)2Sn(CH2CH2)Sn(CH2CH3)(CHCH2)Ar((i)Pr4) (4) featuring five ethylene

86 We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, s

87 analyses show that the mass fractions of Co, Sn, Sr, Ta, Y, and Zr were dominant with >20,000 g/t in

88 ial electron transfer to and from conductive Sn-doped In2O3 (ITO) nanoparticles (NPs) in mesoporous t

89 In contrast, the less crowded Sn(II) hydride [Ar((i)Pr4)Sn(mu-H)]2 (Ar((i)Pr4) = C6H3-

90 diffraction studies were conducted in the Cs/Sn/P/Se system.

91 Powder mixtures of Cs2Se2, Sn, and PSe2 were heated to 650 degrees C and then coole

92 For CT, Sn was 0.99, Sp 0.99, PPV 0.96, NPV 1.00, and Acc 0.99.

93 l correlations among the major elements (Cu, Sn, and Pb) in these alloys.

94 tial element composition of three ternary Cu-Sn-Pb model bronze alloys (lead bronzes: CuSn10Pb10, CuS

95 Single-unit-cell Sn-MFI, with the detectable Sn uniformly distributed and exclusively located at fram

96 orption across pH 2-12 and for two different Sn loadings and confirm the strong retention of Sn(II) e

97 Sn-Br correlations, consistent with dynamic Sn(2+) off-centering, despite there being no evidence of

98 the replacement of Cu(+) cations with either Sn(2+) or Sn(4+) cations.

99 ive cascade transformations, yielding either Sn-substituted naphthalenes or Sn-indenes.

100 A low-bandgap (1.33 eV) Sn-based MA0.5 FA0.5 Pb0.75 Sn0.25 I3 perovskite is deve

101 ichment of selected metal ions (for example, Sn(2+), Mn(2+)) in the halophytic plants, which can then

102 served to form on warming in the experiment: Sn, Cs2Se3, Cs4Se16, Cs2Se5, Cs2Sn2Se6, Cs4P2Se9, and Cs

103 is the first room-temperature ferroelectric Sn insulator with switchable electric polarization.

104 Such fine Sn precipitates and their ample contact with Li2 O proli

105 y linear in the range of 1-250 mug L(-1) for Sn(IV) with a good correlation coefficient of 0.9976.

106 2)=0.9987) for Sb and LOQ-350microgL(-1) for Sn.

107 heric stability, not previously achieved for Sn-based perovskites.

108 green, and economical recycling strategy for Sn with economic value added that is held by the co-prod

109 nambiguously shows the presence of framework Sn(IV)-active sites in an octahedral environment, which

110 o further boost the performance of lead-free Sn-based perovskites.

111 Sn(II)Br5(3-); (5) bromide dissociation from Sn(II)Br5 to Sn(II)Br4(2-).

112 We show that luminescence from Sn-based perovskite nanocrystals occurs on pico- to nano

113 containing Lewis-acid metals (e.g., Al, Ga, Sn, Ti, Zr) play an important role.

114 tive low-melting temperature metals (In, Ga, Sn, Pb), produce stable molten metal alloy catalysts for

115 l (2D) crystals termed 2D-Xenes (X = Si, Ge, Sn and so on) which, together with their ligand-function

116 character once the reagent R3MH (M = Si, Ge, Sn) enters the ligand sphere.

117 of internal alkynes with R3M-H (M = Si, Ge, Sn) follow an unconventional trans-addition mode in the

118 e periodic table, including Group 14 Si, Ge, Sn, and Pb.

119 functionalized E=E multiple bonds (E=Si, Ge, Sn, Pb) because of their potential to exhibit novel phys

120 materials (WHM with W = Zr, Hf; H = Si, Ge, Sn; M = O, S, Se, Te) with identical band topology.

121 ddition of an annealing step close to the Ge-Sn eutectic temperature (230 degrees C) during cool-down

122 th a triangle of Pd3 inside, i.e., [Pd3@Ge18(Sn(i)Pr3)6](2-).

123 X-ray diffraction in [K(222crypt)]2[Ge18Pd3{Sn(i)Pr3}6].(i)Pr2O and was also confirmed in solution b

124 ggered" stannyl-ligated counterpart [Ge18Pd3{Sn(i)Pr3}6](2-) (2), showing the possibility to find suc

125 rimarily tristannylated 9-atom clusters [Ge9{Sn(i)Pr3}3](-), followed by addition of Pd(PPh3)4 to the

126 Interestingly, the SOn + nH2S --> Sn+1 + nH2O reactions occur via low-energy pathways unde

127 roliferate the reversible Sn --> Li x Sn --> Sn --> SnO2 /SnO2-x cycle during charging/discharging.

128 and cellular cross-talk between H2 S and H2 Sn , it is highly desirable to develop single fluorescen

129 l-channel discrimination between H2 S and H2 Sn .

130 h selectivity and sensitivity to H2 S and H2 Sn in aqueous media and in cells.

131 t probe DDP-1 that can visualize H2 S and H2 Sn with different fluorescence signals.

132 sulfide (H2 S) and hydrogen polysulfides (H2 Sn , n>1) are endogenous regulators of many physiologica

133 compounds CsSnI3 and CH3NH3SnI3, which have Sn in the 2+ oxidation state and must be handled in an i

134 Hf-, Sn-, and Zr-Beta zeolites catalyze the cross-aldol conde

135 observed that the Ni interstitial and Ti,Hf/Sn antisite defects are collectively formed, leading to

136 ong-term stability over 300 cycles, and high Sn-->SnO2 reversibility.

137 n, to reduce itself and to form mixed Pt(II)-Sn(II) chloro-complexes.

138 LD procedure, assemblies bridged by Al(III), Sn(IV), Ti(IV), or Zr(IV) metal oxide units have been pr

139 eta-Sn nucleates at/near the Cu6Sn5 layer in Sn-3.0Ag-0.5Cu/Cu joints.

140 through the reaction of Nb, SnO, and SnF2 in Sn flux, within welded Nb containers, crystallizes in a

141 information on the active-site speciation in Sn-beta zeolite.

142 emisorbed), from molten Field's metal (Bi-In-Sn) and Bi-Sn alloys.

143 Eutectic Ga-In (EGaIn) and Ga-In-Sn (Galinstan) alloys are typically used due to their hi

144 3H2)2-bpy)](2+) and degenerately doped In2O3:Sn nanoparticles, present in mesoporous thin films (nano

145 igh hole concentration arising from inherent Sn vacancies in the lattice and its very high electrical

146 When instead Sn(2+) cations are employed, SnSe NCs are formed, mostly

147 urrogate for the trialkylstannylium ion iPr3 Sn(+) , and is rapidly and easily prepared from simple,

148 Li/Sn atoms in the interlayer space are surrounded by a reg

149 s of the synthesized compounds: the local Li/Sn ordering and multiple nanoscale interfaces result in

150 In contrast, the local Li/Sn ordering was revealed by synergistic investigations v

151 s separated by layers of jointly occupied Li/Sn atoms.

152 powder diffraction indicate no long-range Li/Sn ordering.

153 acle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman m

154 ons, resulting in doped CsPb1-xMxBr3 NCs (M= Sn(2+), Cd(2+), and Zn(2+); 0 < x </= 0.1), with preserv

155 out the Ge nanowire lattice with no metallic Sn segregation or precipitation at the surface or within

156 h sulfur gives mixtures of [Bi(NON(R))]2(mu2-Sn) (NON(R) = [O(SiMe2NR)2](2-)).

157 bon composite in which some of the nanosized Sn particles are anchored on the tips of carbon nanotube

158 s emerging asymmetry in the nearest-neighbor Sn-Br correlations, consistent with dynamic Sn(2+) off-c

159 A new Sn-flux synthesis permits the rapid single-phase synthes

160 l linking metal ions, M(2+) (Pt, Zn, Co, Ni, Sn).

161 high heavy metal contents (e.g., Cr, Zn, Ni, Sn, etc.) and the capacity to remove dissolved sulfide i

162 Under reductive conditions (3-nitropyrrole/Sn/AcOH/trifluoromethyl-beta-diketone) the alpha-1H-pyrr

163 iscosity B-coefficient and solvation number (Sn) were determined.

164 of the SnO6 octehedra, under which the Sn-O1-Sn exchange angle theta is decreased below 22.1 GPa, thu

165 This is a limitation in the application of Sn-mediated radical cascades for the preparation of full

166 equilibrium phase in a hole-doped bilayer of Sn on Si(111).

167 ity associated with dynamic off-centering of Sn(2+) in its coordination environment.

168 Critical contents of Sn in granitic magmas, which may be required for the dev

169 based on the cloud point extraction (CPE) of Sn(IV) with Gallocyanin (GC(+)) and glycine as chelating

170 -x)S nanoparticles, followed by diffusion of Sn(4+) into Cu(2-x)S nanoparticles to form the Cu3SnS4 (

171 her facilitated the excessive dissolution of Sn in the nanowires.

172 rolled nanostructures and a high fraction of Sn/Li2 O interface are critical to enhance the coulombic

173 were fabricated and studied as a function of Sn to Pb ratio.

174 y catalysts permitted a greater inclusion of Sn in Ge nanowires compared with conventional Au catalys

175 The non-equilibrium incorporation of Sn into the Ge nanowires can be understood in terms of a

176 The majority of Sn-mediated cyclizations are reductive and, thus, cannot

177 and 2 incorporate the highest nuclearity of Sn(II)-containing POMs to date.

178 C, which is close to the best performance of Sn-based nanoscale material so far.

179 at the improved CO2 reduction performance of Sn-pNWs is due to the density of GBs within the porous s

180 The efficient preparation of Sn-substituted phenanthrenes opens access to convenient

181 C can react with ethylene in the presence of Sn-Beta for 2 h to produce methyl 4-(methoxymethyl)benze

182 uction of SnO2 for the efficient recovery of Sn from SnO2 through a study combining theory and experi

183 Sn(II)Br5(3-); (4) one-electron reduction of Sn(III)Br5(2-) to Sn(II)Br5(3-); (5) bromide dissociatio

184 M) were used to investigate the reduction of Sn(IV) as the hexabromo complex ion in a 2 M HBr-4 M NaB

185 -DISP process: (1) one-electron reduction of Sn(IV)Br6(2-) to Sn(III)Br6(3-); (2) bromide dissociatio

186 loadings and confirm the strong retention of Sn(II) even under anoxic conditions.

187 , we show that inexpensive triflate salts of Sn(2+), Pb(2+), Bi(3+), and Sb(3+) can be used as precur

188 By varying the sequence of Sn-Se and Mo-Se layer pairs deposited and annealing the

189 r in excess of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-u

190 However, the synthesis of Sn-based stanene has proved challenging so far.

191 A test of Sn-O bond dissociation indicated that the "Sn-O bond cle

192 ribution indicated that the highest value of Sn was observed in the least transmissive fracture (or f

193 ement of Cu(+) cations with either Sn(2+) or Sn(4+) cations.

194 Most R(*) and/or Sn(*) radicals are therefore converted into relatively i

195 hydride complexes, L(dagger)(H)M: (M = Ge or Sn, L(dagger) = -N(Ar(dagger))(SiPr(i)3), Ar(dagger) = C

196 half-metal compounds Co2TiX (X = Si, Ge, or Sn) with Curie temperatures higher than 350 K.

197 elding either Sn-substituted naphthalenes or Sn-indenes.

198 simulations evidence the presence of ordered Sn vacancy rich (100) planes within the SnS nanoplatelet

199 micro-sized hollow carbon cubes while other Sn nanoparticles are encapsulated in hollow carbon cubes

200 (LSPRs) in colloidal tin-doped indium oxide (Sn:In2O3, or ITO) nanocrystals.

201 nts (Al, Fe, As, Cu, Cd, Co, Cr, Mn, Ni, Pb, Sn, V, and Zn) were measured in soils and the edible par

202 ple, low temperature solution process for Pb/Sn binary-metal perovskite planar-heterojunction solar c

203 ll Pd-rich particles while leaving larger Pd-Sn alloy particles exposed.

204 )Pr4) isomers of 2a and 3a, i.e., [Ar((i)Pr4)Sn(C2H5)]2 (2b) and Ar((i)Pr4)SnSn(C2H5)2Ar((i)Pr4) (3b)

205 (3b) are obtained by reaction of [Ar((i)Pr4)Sn(mu-Cl)]2 with EtLi or EtMgBr.

206 , the less crowded Sn(II) hydride [Ar((i)Pr4)Sn(mu-H)]2 (Ar((i)Pr4) = C6H3-2,6(C6H3-2,6-(i)Pr2)2) (1b

207 The tin(II) hydride [Ar((i)Pr6)Sn(mu-H)]2(Ar((i)Pr6) = C6H3-2,6(C6H2-2,4,6-(i)Pr3)2) (1

208 s Sn2RHAr2 which has the structure Ar((i)Pr6)Sn-Sn(H)(CH2CH2(t)Bu)Ar((i)Pr6) (6a) or the monohydrido

209 .6 for the (2)C complex consistently predict Sn sorption across pH 2-12 and for two different Sn load

210 The electrochemically prepared Sn and Bi catalysts proved to be highly active, selectiv

211 ion to the formal oxidative addition product Sn(boryl)2(H)(NH2).

212 Furthermore, Pt-Sn iNPs are shown to be a robust catalytic platform for

213 activation phase where it transforms into Pt-Sn clusters under reaction conditions.

214 ically dispersed species on CeO2 , making Pt-Sn/CeO2 a fully regenerable catalyst.

215 -CH, to vinylidene, C-CH2, on surfaces of Pt-Sn ordered alloys.

216 Formation of small Pt-Sn clusters allows the catalyst to achieve high selectiv

217 The CeO2 -supported Pt-Sn clusters are very stable, even during extended reacti

218 Furthermore, upon oxidation the Pt-Sn clusters readily revert to the atomically dispersed s

219 ydrogen-induced polarization NMR on these Pt-Sn catalysts.

220 of ethanol than pure Pt and intermetallic Pt/Sn, showing 4.1 times higher CO2 peak partial pressure g

221 studied detailed structure properties of Pt/Sn catalysts for the EOR, especially CO2 generation in s

222 Platinum-tin (Pt/Sn) binary nanoparticles are active electrocatalysts for

223 r the synthesis of size-monodisperse Pt, Pt3 Sn, and PtSn intermetallic nanoparticles (iNPs) that are

224 y reduces SnO2, producing 99.34% high-purity Sn and H2 and CO.

225 specific for Pseudomonas aeruginosa (pyocin Sn) was produced and shown to kill P. aeruginosa thereby

226 However, depositing high-quality Sn-based perovskite films is still a challenge, particul

227 3-); (2) bromide dissociation of the reduced Sn(III)Br6(3-) to Sn(III)Br5(2-); (3) disproportionation

228 ions and stabilizes fine, fracture-resistant Sn precipitates in the Li2 O matrix.

229 ontact with Li2 O proliferate the reversible Sn --> Li x Sn --> Sn --> SnO2 /SnO2-x cycle during char

230 e ruthenostannylene complex [Cp*(IXy)(H)2 Ru-Sn-Trip] (1; IXy=1,3-bis(2,6-dimethylphenyl)imidazol-2-y

231 DNAPL fracture saturations (Sn) ranged from undetectable to 0.007 (DNAPL volume/frac

232 e selected EE components and Ag, Ga, Mo, Sb, Sn, Sr, and Zr with >50 g/t in the analyzed shredder fra

233 Cu, Fe, Mn, Cd, Cr, Hg, Mo, Ni, Pb, Se, Sb, Sn, and Zn) in three different pulse species: Vigna ungu

234 of intra-abdominal injury, FAST sensitivity (Sn) was 0.56, specificity (Sp) 0.98, positive predictive

235 They consist of densely packed LixM (M = Si, Sn, or Al) nanoparticles encapsulated by large graphene

236 he oxidative addition of H2 to a single site Sn(II) system has been achieved for the first time, gene

237 stretched into uniformly dispersed and sized Sn nanoparticles in polyethersulfone (PES) through a sta

238 In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that

239 Cs4(Sn3Se8)[Sn(P2Se6)]2 is a two-dimensional compound that behaves a

240 n(P2Se6)2, alpha-Cs2SnP2Se6, and Cs4(Sn3Se8)[Sn(P2Se6)]2.

241 on of AsCO(-) with the bulky stannylene Ter2 Sn (Ter=2,6-bis[2,4,6-trimethylphenyl]phenyl) is describ

242 r the initial association of AsCO(-) to Ter2 Sn, decarbonylation occurs to give an anion featuring mo

243 nomeric tin(II) kappa(4) tetrametaphosphate [Sn(P4O12)](2-) (4, 78%, a molecular analog of SnO) and b

244 Previous work has demonstrated that Sn, Ge, Cu, Bi, and Sb ions could be used as alternative

245 The Sn-As layers are comprised of Sn3As3 puckered hexagons i

246 hyltin (DET) is a substrate for MerB and the Sn(IV) product remains bound in the active site in a coo

247 ions from the C-H donors on one side and the Sn-H and B-H hydride donors on the other follow separate

248 l is only approximately 10% as active as the Sn and Bi systems at an applied potential of E = -1.95 V

249 , we find that the molecule fragments at the Sn-benzyl bond when exposed to Au surfaces at temperatur

250 atmosphere when fabricating solar cells, the Sn in the molecular iodosalt compounds is in the 4+ oxid

251 ed to search for all stable compounds in the Sn-H system.

252 Reactions of the Sn(II) hydrides [ArSn(mu-H)]2 (1) (Ar = Ar(iPr4) (1a), A

253 high background dark carrier density of the Sn-based perovskite is responsible for the lower photovo

254 SnN2 ) to 3.1 eV (ZnGeN2 ) by control of the Sn/Ge ratio.

255 rboxylate and lithium propionate form on the Sn electrode surface at 1.25 V.

256 urface and a catalytic reduction path on the Sn surface are introduced to explain the surface depende

257 Once the Sn+1 particles are formed, they may further nucleate to

258 As a result, the Sn/C composite exhibits an excellent cyclic performance,

259 Methyl groups attached to the Sn atom are not transferred to the surface.

260 lone pair stereochemical activity due to the Sn(2+) s(2) lone pair causes a crystallographically hidd

261 rtion of the SnO6 octehedra, under which the Sn-O1-Sn exchange angle theta is decreased below 22.1 GP

262 f Sn-O bond dissociation indicated that the "Sn-O bond cleavage first" mechanism is not a minimum ene

263 ly in ITO nanocrystals, independent of their Sn content.

264 Tin (Sn)-based perovskites are increasingly attractive becaus

265 ca molecular sieve containing framework tin (Sn-Beta) to produce the Diels-Alder dehydration product,

266 Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research a

267 Here we show an unusual phenomenon that tin (Sn) microparticles with both poor size distribution and

268 In contrast, when tin (Sn) is added to CeO2 , the single-atom Pt catalyst under

269 Catalysis across a 'TM-Sn' motif is an emerging area in the broader domain of m

270 The TM-Sn catalyzed reactions presented include, among others,

271 one-electron reduction of Sn(III)Br5(2-) to Sn(II)Br5(3-); (5) bromide dissociation from Sn(II)Br5 t

272 ) one-electron reduction of Sn(IV)Br6(2-) to Sn(III)Br6(3-); (2) bromide dissociation of the reduced

273 rtionation of the reduced 2Sn(III)Br5(2-) to Sn(IV)Br5(-) and Sn(II)Br5(3-); (4) one-electron reducti

274 issociation of the reduced Sn(III)Br6(3-) to Sn(III)Br5(2-); (3) disproportionation of the reduced 2S

275 ; (5) bromide dissociation from Sn(II)Br5 to Sn(II)Br4(2-).

276 gand (R) that runs from T = Si through Ge to Sn and from R = methyl through phenyl and p-styryl to 1-

277 us enhancing the PL quantum yield leading to Sn (3) P1 --> (1) S0 photons transition.

278 ully utilized for the determination of total Sn in some canned beverages by Flame Atomic Absorption S

279 to a trigonal prismatic base and made of two Sn and one Ni atoms.

280 hrough the isolation of species of the types Sn(boryl)2.NH3 and [Sn(boryl)2(NH2)](-) and their onward

281 Using Sn-3.0Ag-0.5Cu/Cu and Sn-0.7Cu/Cu as examples, we show t

282 comparable in size to the Cu(+) ions, while Sn(2+) ones are much larger.

283 166) with Sn-As layers separated by layers of jointly occupied Li/

284 ny further replacement of Cu(+) cations with Sn(4+) cations would require a drastic reorganization of

285 P is based on molybdenum blue chemistry with Sn(II) chloride dihydrate reduction.

286 ontribution of (2)C complexes increases with Sn loading.

287 that self-doping of SnO2-x nanocrystals with Sn(2+) red-shifts their absorption to the visible region

288 uspension of the latter is then reacted with Sn(n)Bu3Cl or TlCp to produce 2 and 3, respectively, whi

289 Li2 O proliferate the reversible Sn --> Li x Sn --> Sn --> SnO2 /SnO2-x cycle during charging/dischar

290 that the far-infrared conductivity of Pb1-x Sn x Se (x = 0.23-0.25) single crystals is dominated by

291 crystalline insulator, (001)-oriented Pb1-x Sn x Se in zero and high magnetic fields.

292 A new ternary compound, Li(1-x)Sn(2+x)As2, 0.2 < x < 0.4, was synthesized via solid-sta

293 and highly anisotropic resistivity in Li(1-x)Sn(2+x)As2.

294 n of uniform diameter, direct bandgap Ge(1-x)Sn(x) alloy nanowires, with a Sn incorporation up to 9.2

295 monstrate that thin films of SnTe and Pb(1-x)Sn(x)Se(Te) grown along the (001) direction are topologi

296 wide range of compositions (0.5 </= Cu/(Zn + Sn) </= 1.2).

297 of the synthetic conditions and the Cu/(Zn + Sn) ratio of the precursor has enabled precise control o

298 anocrystals (PdM, M = V, Mn, Fe, Co, Ni, Zn, Sn, and potentially extendable to other metal combinatio

299 ion released toxic metals containing Pb, Zn, Sn, and Sb.

300 Sr, Ba, Sr0.5Ba0.5) and Li7La3C2O12 (C = Zr, Sn).