ライフサイエンスコーパス: antiferromagnetic

1 In bulk form, EuTiO(3), is antiferromagnetic.

2 entropy-stabilized oxides considered here is antiferromagnetic.

3 agnetic states: +/-ferromagnetic (FM) and +/-antiferromagnetic (A-FM).

4 6) (S = 2) was found to undergo a long-range antiferromagnetic (AF) ordering at T(N) = 7 K due to int

5 Here we find that antiferromagnetic (AF) quantum fluctuations manifest in

6 rgoes a magnetostructural transition from an antiferromagnetic (AF) to a ferromagnetic (FM) phase bet

7 ture magnetostructural phase transition from antiferromagnetic (AF) to ferromagnetic (FM) ordering.

8 the other hand, manipulation of magnetism in antiferromagnetic (AFM) based nanojunctions by purely el

9 Here we show a robust antiferromagnetic (AFM) coupling in core/shell nanoparti

10 i-layer of a heavy metal (Pt) and a bi-axial antiferromagnetic (AFM) dielectric (NiO) can be a source

11 The insertion of thin antiferromagnetic (AFM) films allowed two stable magneti

12 Undoped Sr2RuO4 exhibits incommensurate antiferromagnetic (AFM) fluctuations, which can evolve i

13 of iron pnictide superconductors and similar antiferromagnetic (AFM) ground state to that of cuprates

14 her is from a ferromagnetic (FM) metal to an antiferromagnetic (AFM) insulator at [Formula: see text]

15 Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible

16 CeB6 is characterized by a more conventional antiferromagnetic (AFM) order , the low-temperature phys

17 eraction-driven Mott insulating state and an antiferromagnetic (AFM) state.

18 nostructures, an opportunity of manipulating antiferromagnetic (AFM) states should offer another rout

19 An antiferromagnetic (AFM) transition at T(N) = 75 K and a

20 emonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic he

21 A novel T1 agent, antiferromagnetic alpha-iron oxide-hydroxide (alpha-FeOO

22 Simulations of a quantum magnet with antiferromagnetic and dimerized ground states confirm th

23 With evidence of correlated antiferromagnetic and ferroelectric order, the findings

24 tional theory calculations suggest competing antiferromagnetic and ferromagnetic long-range orders, w

25 and electrically drive a transition between antiferromagnetic and ferromagnetic order with only a fe

26 ion or the growth axial direction, with both antiferromagnetic and ferromagnetic orders.

27 e magnets, the coexistence of third-neighbor antiferromagnetic and nearest-neighbor ferromagnetic exc

28 the most homogeneous crystals for which the antiferromagnetic and orthorhombic phase transitions occ

29 control, and identify a material, collinear antiferromagnetic and pyroelectric Ni3TeO6, in which mag

30 tiferromagnetic superradiant phase, both the antiferromagnetic and superradiant orders can coexist, a

31 systematic investigation of paramagnetic to antiferromagnetic and tetragonal to orthorhombic structu

32 ty spin states of ferromagnetic, spin-canted antiferromagnetic, and fully antiferromagnetic bilayer m

33 to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) wi

34 of correlation effects in nonsuperconducting antiferromagnetic BaCr2As2 by means of angle-resolved ph

35 though as intense as, the magnons of undoped antiferromagnetic BaFe(2)As(2).

36 re we demonstrate experimentally that canted antiferromagnetic BaMnSb2 is a 3D Weyl semimetal with a

37 toms, which leads to either ferromagnetic or antiferromagnetic behavior.

38 The magnetic study of 4 indicated weak antiferromagnetic behavior.

39 n spins on neighbouring species resulting in antiferromagnetic behaviour.

40 ic, spin-canted antiferromagnetic, and fully antiferromagnetic bilayer manganites.

41 icroelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit

42 pentahydrate, CN), an alternating Heisenberg antiferromagnetic chain model material, is performed wit

43 ononitroxides 4 and 5 behave as a Heisenberg antiferromagnetic chain, whereas dinitroxides 6-8 are al

44 ling and experimentally demonstrate it using antiferromagnetic chains with up to 344 superconducting

45 iated with the broken symmetry effect of the antiferromagnetic charge-ordered states in manganites.

46 functional calculations find semiconducting antiferromagnetic compounds with strong in-plane and wea

47 vengers', nanoparticles containing synthetic antiferromagnetic core layers and functional capping lay

48 ex pseudo-ordering gives rise to short-range antiferromagnetic correlation within an insulating state

49 creation of artificial Mott insulators where antiferromagnetic correlations between spins and orbital

50 Antiferromagnetic correlations have been argued to be th

51 ere, we report site-resolved observations of antiferromagnetic correlations in a two-dimensional, Hub

52 Due to electronic repulsion, the antiferromagnetic correlations of the impurity lattice a

53 solved measurements, we revealed anisotropic antiferromagnetic correlations, a precursor to long-rang

54 ules have S = 1 but possess only short-range antiferromagnetic correlations.

55 rder and the build-up of significant dynamic antiferromagnetic correlations.

56 e high-pressure synthesis of a new polar and antiferromagnetic corundum derivative Mn2MnWO6, which ad

57 e-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II-VI semiconduc

58 ch show that the peroxide mediates only weak antiferromagnetic coupling (-2J = 144 cm(-1)).

59 e an open-shell diradical singlet state with antiferromagnetic coupling between (S = 1/2) Ru(III) and

60 ty measurements rationalize an unprecedented antiferromagnetic coupling between a magnetic U(4+) site

61 {110} planes are unusually stable and induce antiferromagnetic coupling between adjacent domains prov

62 DFT calculations further support the strong antiferromagnetic coupling between Co(II) ions and bptz

63 The weak effective antiferromagnetic coupling between the Dy(III) ions can

64 sign of EB is related to the frustration of antiferromagnetic coupling between the ferromagnetic reg

65 pin vanishes because of covalency and strong antiferromagnetic coupling between the ligand radical an

66 A strong antiferromagnetic coupling between the metal centers, me

67 spin ground state of S(T) = 4 resulting from antiferromagnetic coupling between the S(birad) = 1 bira

68 Weak antiferromagnetic coupling between these high-spin ribbo

69 both compounds, the experimentally observed antiferromagnetic coupling can be quantitatively explain

70 NO ligands bound to [2Fe2S], the larger the antiferromagnetic coupling constant.

71 a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferroma

72 two independent U(V) 5f (1) centers, with no antiferromagnetic coupling present.

73 descriptions as (a) high-spin iron(II) with antiferromagnetic coupling to a pyridine anion radical a

74 nductor cobalt phthalocyanine exhibit strong antiferromagnetic coupling, with an exchange energy reac

75 ll three oxide-hydride phases exhibit strong antiferromagnetic coupling, with SrVO2H exhibiting an an

76 an unusual molecule stabilized by d-orbital antiferromagnetic coupling.

77 ub-layers, exchange-coupled via an ultrathin antiferromagnetic-coupling spacer layer.

78 The strong antiferromagnetic couplings are surprising given they ap

79 The antiferromagnetic Cr(V) peroxychromates, M(3)Cr(O(2))(4)

80 heterostructures exhibiting Neel order in an antiferromagnetic CrSb and ferromagnetic order in Cr-dop

81 l switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied cu

82 upling in a series of MOFs, constructed from antiferromagnetic dimeric-Cu(II) building blocks.

83 metal-organic frameworks (MOFs) derived from antiferromagnetic dimeric-Cu(II) building units and nonm

84 theories indeed predicted faster dynamics of antiferromagnetic domain walls (DWs) than ferromagnetic

85 , and the clamping between ferroelectric and antiferromagnetic domain walls.

86 The intrinsic high frequencies of antiferromagnetic dynamics represent another property th

87 A model for an antiferromagnetic effective exchange interaction based o

88 itive to disturbing magnetic fields, and the antiferromagnetic element would not magnetically affect

89 an S=4 spin system with strong cobalt-ligand antiferromagnetic exchange and J approximately -290 cm(-

90 rate the presence of extremely strong direct antiferromagnetic exchange between S = 2 Fe(II) centers

91 The antiferromagnetic exchange coupling between the layers l

92 as the dominant contributor to ground-state antiferromagnetic exchange coupling between the SQ and N

93 directly proportional to the strength of the antiferromagnetic exchange coupling between the two sub-

94 magnetic study revealed an unusually strong antiferromagnetic exchange coupling between the two U(V)

95 ethyl-1,10-phenanthroline) exhibits a record antiferromagnetic exchange coupling constant of J(V-Mo)

96 and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the

97 assoc) approximately 60 M(-1)), with a weak, antiferromagnetic exchange coupling, J/k approximately -

98 oth perpendicular to the film plane, a large antiferromagnetic exchange interaction induces a high fr

99 When the value of antiferromagnetic exchange interaction is one and a half

100 the case of 3, concomitant ferromagnetic and antiferromagnetic exchange interactions are found along

101 ation of pairwise Mn(III)2 ferromagnetic and antiferromagnetic exchange interactions, and the resulta

102 gnetic properties: The dihydrate phase shows antiferromagnetic exchange interactions, whereas ferroma

103 This reveals the existence of an antiferromagnetic exchange pinning layer at the interfac

104 Quantum Monte Carlo simulations reveal antiferromagnetic exchange-coupling constants with an av

105 netic order down to 2 K despite considerable antiferromagnetic exchange.

106 s of Ti atoms interacting with each other in antiferromagnetic fashion to lower the total energy of t

107 rk opens pathways toward a new generation of antiferromagnetic - ferromagnetic interactions for spint

108 antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction acr

109 ature, and is in the temperature range where antiferromagnetic fluctuations are first detected.

110 erromagnetic state to Mott insulating G-type antiferromagnetic (G-AFM) state was found in Ca3(Ru(1-x)

111 The intrinsic antiferromagnetic goethite (alpha-FeOOH) shows very low

112 elow 356 K-this is in contrast to the purely antiferromagnetic ground state adopted by the well-studi

113 O3, the new double perovskite oxides have an antiferromagnetic ground state and around room temperatu

114 hese high-spin ribbons stabilizes an ordered antiferromagnetic ground state below 4.5 K.

115 ahertz spectroscopy identify a magnon in the antiferromagnetic ground state, with a temperature depen

116 Studies in antiferromagnetic heavy-fermion materials have revealed

117 Kitaev interactions, while a second-neighbor antiferromagnetic Heisenberg exchange drives the ground

118 ing it to a problem of quantum magnetism, an antiferromagnetic Heisenberg model in an external magnet

119 etism in MnPt films, although it is robustly antiferromagnetic in bulk.

120 ncing the applied field against an intrinsic antiferromagnetic instability, which tends to spontaneou

121 = K, Rb, Cs), the presence of an intergrown antiferromagnetic insulating phase makes the study of th

122 illerite SrCoO2.5 that is a room-temperature antiferromagnetic insulator (AFM-I) and the perovskite S

123 mechanism by showing that even the simplest antiferromagnetic insulator like MnO, could display a ma

124 that the interfacial coupling between the 3d antiferromagnetic insulator SrMnO3 and the 5d paramagnet

125 which we attribute to the evolution from an antiferromagnetic insulator to a metallic phase.

126 is a ferromagnetic metal, and SrCoO2.5 is an antiferromagnetic insulator-enable an unusual form of ma

127 in their isostructural Mn analogs, which are antiferromagnetic insulators like the cuprates.

128 ibits real space Fe and Cu ordering, and are antiferromagnetic insulators with the insulating behavio

129 tic interaction along the b axis, and strong antiferromagnetic interaction along the a axis.

130 Cu(2+) and oxalate anions, showing a strong antiferromagnetic interaction between S = 1/2 metal atom

131 though solid-state magnetometry indicates an antiferromagnetic interaction between the two iron cente

132 Magnetic data reveal a weak antiferromagnetic interaction through a pi-stacking arra

133 ions seem to be predominant, the presence of antiferromagnetic interaction was also observed.

134 Strong antiferromagnetic interactions across antiphase boundari

135 he solid or fluid phase above 200 K and weak antiferromagnetic interactions at low temperatures.

136 = 1/2 centers in the main chain and suggest antiferromagnetic interactions between adjacent spin sit

137 Here, we engineer frustrated antiferromagnetic interactions between spins stored in a

138 eraction in the former (2J=14.4 cm(-1) ) and antiferromagnetic interactions in 1O at low temperatures

139 resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the t

140 Magnetic analysis showed gradual increase of antiferromagnetic interactions upon cooling.

141 UID magnetometry, reveal weak intramolecular antiferromagnetic interactions.

142 ed lattices owing to the competing ferro and antiferromagnetic interactions.

143 a competition between the Zeeman energy and antiferromagnetic interfacial exchange coupling energy.

144 ative and positive exchange bias, as well as antiferromagnetic interlayer coupling are observed in di

145 The antiferromagnetic IrMn layer also supplies an in-plane e

146 ening up a new avenue for designing powerful antiferromagnetic iron T1 contrast agents.

147 tic Ising model, and (iii) equivalent to the antiferromagnetic Ising model.

148 itaxial heterostructures combining layers of antiferromagnetic LaFeO(3) (LFO) and ferromagnetic La(0.

149 ansition to a ferromagnetic phase when polar antiferromagnetic LaMnO3 (001) films are grown on SrTiO3

150 gether with an excess of La can stabilize an antiferromagnetic LaMnO3-type phase at the interface reg

151 sign alternates with the periodicity of the antiferromagnetic lattice.

152 dicates that these structural defects in the antiferromagnetic layer are behind the resulting large v

153 netic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significa

154 the transport properties exclusively in the antiferromagnetic layer.

155 a ferromagnetic layer exchange-coupled to an antiferromagnetic layer.

156 both the hidden-order (HO) and large-moment antiferromagnetic (LMAFM) phases and established the 3D

157 both the hidden-order (HO) and large-moment antiferromagnetic (LMAFM) regions of the phase diagram.

158 The antiferromagnetic long-range order manifests through the

159 olated paramagnetic diradicals coupled in an antiferromagnetic manner.

160 cooling through the Neel temperature of the antiferromagnetic material in the presence of a magnetic

161 Tetragonal CuMnAs is an antiferromagnetic material with favourable properties fo

162 eraction that couples a ferromagnetic and an antiferromagnetic material, resulting in a unidirectiona

163 e epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exh

164 k on integrating topological insulators with antiferromagnetic materials and unveils new avenues towa

165 Antiferromagnetic materials are internally magnetic, but

166 ) has a general consequence of causing these antiferromagnetic materials to become ferromagnets.

167 arge can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit c

168 romagnetic islands nucleate in an insulating antiferromagnetic matrix.

169 r the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-as

170 Here, we report evidence for an itinerant antiferromagnetic metal with no magnetic constituents: T

171 Magnetic studies reveal strong antiferromagnetic metal...radical coupling with coupling

172 othermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator th

173 alized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical reg

174 s have been realized using fully compensated antiferromagnetic metals.

175 witch is driven by magnetic frustration from antiferromagnetic Mn(2+) spin ordering which cants Fe(3+

176 netic measurements revealed the existence of antiferromagnetic Mn(III)...Fe(II) (Fe(II) HS, S = 2) in

177 ompeting ferromagnetic (Mn(2+) -Mn(3+) ) and antiferromagnetic (Mn(2+) -Mn(2) , Mn(3+) -Mn(3+) ) inte

178 Moreover, highly ordered antiferromagnetic MnPt films exhibit superiorly large ex

179 der in these materials in terms of a layered antiferromagnetic model.

180 We demonstrate that the antiferromagnetic moment vector can be stabilized along

181 This implies that information stored in antiferromagnetic moments would be invisible to common m

182 e means for an efficient electric control of antiferromagnetic moments.

183 a quantum phase transition (QPT) between an antiferromagnetic Mott insulating state and a paramagnet

184 cuprate high-temperature superconductors, an antiferromagnetic Mott insulating state can be destabili

185 In particular, on the decay of the antiferromagnetic Mott insulating state into a non-Fermi

186 enon at the LaMnO3/SrTiO3 interface where an antiferromagnetic Mott insulator abruptly transforms int

187 tion process in superfluid helium due to the antiferromagnetic nature of chromium.

188 port, we realize a Dicke-Ising model with an antiferromagnetic nearest-neighbor spin-spin interaction

189 e collective spin-photon interaction and the antiferromagnetic nearest-neighbor spin-spin interaction

190 to be a direct manifestation of the trigonal antiferromagnetic net structure, allowing study of frust

191 as the two-dimensional kagome or triangular antiferromagnetic nets, can significantly enhance the ch

192 The antiferromagnetic normal phase and the antiferromagnetic

193 , including: a paramagnetic normal phase, an antiferromagnetic normal phase, a paramagnetic superradi

194 en the nonmagnetic metallic cT phase and the antiferromagnetic O phase.

195 rameter such as bandwidth or doping leads to antiferromagnetic or Mott insulating phases.

196 jacent to competing states exhibiting static antiferromagnetic or spin density wave order.

197 single-phase multiferroics remain limited by antiferromagnetic or weak ferromagnetic alignments, by a

198 Direct coupling between BiFeO3 antiferromagnetic order and Co magnetization is observed

199 ron-based superconductivity develops near an antiferromagnetic order and out of a bad-metal normal st

200 Additionally, BaMnSb2 also exhibits a G-type antiferromagnetic order below 283 K.

201 olarization (PS) of 67.8 muC cm(-2), complex antiferromagnetic order below approximately 75 K, and fi

202 Powder neutron diffraction reveals a G-type antiferromagnetic order below T(N) = 338(1) K for Pn = A

203 We show here that an induced antiferromagnetic order can be stabilized in the [111] d

204 xtremely high magnetic fields to destroy the antiferromagnetic order in gamma-lithium iridate and rev

205 The smooth disappearance of antiferromagnetic order in strongly correlated metals co

206 Moreover, antiferromagnetic order is shown to coexist with superco

207 Antiferromagnetic order occurs below a Neel temperature

208 of Bi(3+) at around 135 K, and a long-range antiferromagnetic order related to the Cr(3+) spins arou

209 The data reveal the development of nuclear antiferromagnetic order slightly above 2 mK and of heavy

210 The onset temperature T CDW takes over the antiferromagnetic order temperature T N beyond a critica

211 BiFeO3, as well as exchange coupling of its antiferromagnetic order to a ferromagnetic overlayer.

212 ic order for 304 K < T < 565 K, but a canted antiferromagnetic order with a ferromagnetic component f

213 Neutron diffraction shows collinear antiferromagnetic order with a high Neel temperature.

214 tion functions reveals a hidden finite-range antiferromagnetic order, a direct consequence of spin-ch

215 anied by short-range, quasi-one-dimensional, antiferromagnetic order, and provides a natural explanat

216 g these fields, which couple strongly to the antiferromagnetic order, we demonstrate room-temperature

217 charge stripes separating narrow domains of antiferromagnetic order.

218 the vicinity of the onset of the short-range antiferromagnetic order.

219 c structure of ferromagnetic and spin-canted antiferromagnetic ordered materials as well as an unders

220 bove 5 GPa provide a direct signature of the antiferromagnetic ordered state, whereas high-resolution

221 On decreasing x from 0.5, the antiferromagnetic-ordered moment continuously decreases,

222 (ferromagnetic ordering in the ab plane and antiferromagnetic ordering along the c axis below 286 K)

223 lectronic structure calculations confirm the antiferromagnetic ordering as the ground state for Cs(3)

224 ions within the FeSe2 chains which result in antiferromagnetic ordering below 170 K.

225 Powder neutron diffraction confirms antiferromagnetic ordering below TN approximately 175 K,

226 magnetic coupling, with SrVO2H exhibiting an antiferromagnetic ordering temperature, T(N)>300 K.

227 strong magnetic correlations persist at the antiferromagnetic ordering vector up to dopings of about

228 ombic) phase transition at Ts = 90 K without antiferromagnetic ordering-by neutron scattering, findin

229 we predict excited states that have perfect antiferromagnetic ordering.

230 The complex antiferromagnetic orders observed in the honeycomb irida

231 ghest attainable magnetic fields.The complex antiferromagnetic orders observed in the honeycomb irida

232 In the resulting insulating state, antiferromagnetic orders of the local moments typically

233 cT) phase at low temperature and PII with an antiferromagnetic orthorhombic (O) phase at low temperat

234 gnments that are found within the 3-D C-type antiferromagnetic perovskites.

235 se transition taking place at ~400 K from an antiferromagnetic phase at room temperature to a high te

236 e planes of Fe and Rh atoms in the nominally antiferromagnetic phase at room temperature.

237 The activation volume of the antiferromagnetic phase is more than two orders of magni

238 n(4+) and Mn(3+) in a 1:1 ratio, exhibits an antiferromagnetic phase transition (TN ~ 120 K) with a w

239 upt transition from the ferromagnetic to the antiferromagnetic phase, while the reverse transition re

240 At low temperatures, the low-pressure antiferromagnetic phases below 8 GPa where O2 molecules

241 nomena and highlight their importance in the antiferromagnetic phases of Kondo lattices.

242 films comprise coexisting ferromagnetic and antiferromagnetic phases with different resistivities an

243 high temperatures, whereas the other is the antiferromagnetic plaquette phase with broken C4 symmetr

244 O3:NiO films, which can be attributed to the antiferromagnetic properties of the Co3O4 phase.

245 Fluctuations around an antiferromagnetic quantum critical point (QCP) are belie

246 ypnictide, CeNiAsO, exhibits a heavy-fermion antiferromagnetic quantum critical point as a function o

247 duced state in the vicinity of a field-tuned antiferromagnetic quantum critical point at Hc approxima

248 ubstitution for indium in CeRhIn5 shifts its antiferromagnetic quantum critical point from 2.3 GPa to

249 results underline that fluctuations from the antiferromagnetic quantum criticality promote unconventi

250 nt pulses can move domain walls in synthetic antiferromagnetic racetracks that have almost zero net m

251 g the ferromagnetic-like cluster glasses and antiferromagnetic regions was observed in a newly develo

252 Although the antiferromagnetic response in the pseudogap state has be

253 n of the anisotropic magnetoresistance in an antiferromagnetic semiconductor Sr2IrO4.

254 se transition between stable 1D metal and an antiferromagnetic semiconductor, with the phase boundary

255 antum wells that are embedded in insulating, antiferromagnetic SmTiO3, as a function of temperature,

256 ayed growth of spin fluctuations and develop antiferromagnetic spatial correlations resulting from th

257 er is a consequence of the interplay between antiferromagnetic spin correlations and local magnetic a

258 Antiferromagnetic spin correlations are maximal at half-

259 ding allows us to investigate the physics of antiferromagnetic spin dynamics and highlights the impor

260 s remarkable enhancement is a consequence of antiferromagnetic spin dynamics at TA.

261 However, experimental investigations of antiferromagnetic spin dynamics have remained unexplored

262 al motivation towards this direction is that antiferromagnetic spin dynamics is expected to be much f

263 Here we show that fast field-driven antiferromagnetic spin dynamics is realized in ferrimagn

264 tering spectroscopy to probe the dynamics of antiferromagnetic spin ordering in the manganite Pr(0).(

265 an in-plane oriented diagonal double-stripe antiferromagnetic spin structure.

266 ibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct proje

267 nge bias and facilitates the manipulation of antiferromagnetic spintronic devices.

268 The field of antiferromagnetic spintronics can also be viewed from th

269 Antiferromagnetic spintronics is an emerging field; anti

270 Antiferromagnetic spintronics is an emerging research fi

271 avenues towards dissipationless topological antiferromagnetic spintronics.

272 tlook of future research and applications of antiferromagnetic spintronics.

273 s films are suitable candidate materials for antiferromagnetic spintronics.

274 A phase transition from metallic AFM-b antiferromagnetic state to Mott insulating G-type antife

275 pressure of approximately 4.8 GPa where the antiferromagnetic state transforms into bulk superconduc

276 our results are most consistent with a layer antiferromagnetic state with broken time reversal symmet

277 In the resulting canted antiferromagnetic state, we observe transport signatures

278 rons order to form a spin-density-wave (SDW) antiferromagnetic state.

279 e propose detection schemes for implementing antiferromagnetic states and density waves.

280 al correlations and show how both ferro- and antiferromagnetic states are present already for small s

281 hibition that generated locally "frustrated" antiferromagnetic states.

282 rial is characterized by a 3-k non-collinear antiferromagnetic structure and multidomain Jahn-Teller

283 d, we find that Sr2MgOsO6 orders in a type I antiferromagnetic structure at the remarkably high tempe

284 e fields can be eliminated using a synthetic antiferromagnetic structure composed of two magnetic sub

285 mergence of a ((1/4),(1/4),(1/4))-wavevector antiferromagnetic structure in LaNiO3 and the presence o

286 magnetic state of Eu evolves from the canted antiferromagnetic structure in the ground state, via a p

287 ediate pressure, finally to an "unconfirmed" antiferromagnetic structure under the high pressure.

288 on between ferromagnetic double-exchange and antiferromagnetic super-exchange.

289 The antiferromagnetic normal phase and the antiferromagnetic superradiant phase are new phases in m

290 In the antiferromagnetic superradiant phase, both the antiferro

291 e, a paramagnetic superradiant phase, and an antiferromagnetic superradiant phase.

292 ugh a metamagnetic transition from a helical antiferromagnetic to a homogeneous ferromagnetic state f

293 consistent picture based on the change from antiferromagnetic to ferromagnetic coupling between the

294 0(-15) seconds) photo-induced switching from antiferromagnetic to ferromagnetic ordering in Pr0.7Ca0.

295 metallic FeRh system undergoes a first-order antiferromagnetic to ferromagnetic transition above room

296 We demonstrate detection of antiferromagnetic transition in ultra-thin CoO films via

297 rmed by the TN values of the paramagnetic to antiferromagnetic transition.

298 ture calculations to characterize successive antiferromagnetic transitions in GdSi.

299 e manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin

300 exchange coupling within the [Fe8 ] core is antiferromagnetic which is attenuated upon reduction to