ライフサイエンスコーパス: atomic layer deposition

1 atalytically active anatase-phase TiO2 using atomic layer deposition.

2 version can be engineered by plasma-enhanced atomic layer deposition.

3 H3PbBr3 perovskite using spatial atmospheric atomic layer deposition.

4 s line defects, notably grain boundaries, by atomic layer deposition.

5 ed with a thin outer shell of TiO2 formed by atomic layer deposition.

6 e using ultrathin aluminium oxide (Al2O3) by atomic layer deposition.

7 ing the catalyst with a second oxide through atomic layer deposition.

8 has been developed that is tantamount to wet atomic layer deposition.

9 rticles has been systematically varied using atomic layer deposition.

10 her tuning and chemical derivatization using atomic-layer deposition.

11 ed zirconia (LSM/YSZ) cathode backbone using Atomic Layer Deposition (ALD) and thermal treatment.

12 ys was evaluated using platinum deposited by atomic layer deposition (ALD) as a HER cocatalyst.

13 oxide (AZO) was deposited by low-temperature atomic layer deposition (ALD) as the transparent conduct

14 template to polydimethylsiloxane (PDMS) via atomic layer deposition (ALD) assisted sacrificial etchi

15 s of hematite (alpha-Fe(2)O(3)) deposited by atomic layer deposition (ALD) coated with varying amount

16 Recent work on conformal atomic layer deposition (ALD) coating of anodes and cath

17 of the adsorption reaction for metal-nitride atomic layer deposition (ALD) from alkylamido organometa

18 Atomic layer deposition (ALD) has evolved as an importan

19 Atomic layer deposition (ALD) has recently gained intere

20 and large quantity (denoted as Ni-AIM) using atomic layer deposition (ALD) in a MOF (AIM).

21 or in situ monitoring of thin-film growth by atomic layer deposition (ALD) in a viscous flow environm

22 Notably, atomic layer deposition (ALD) in MOFs has recently emerg

23 Atomic layer deposition (ALD) is a process for depositin

24 ogress in the simulation of the chemistry of atomic layer deposition (ALD) is presented for technolog

25 that can create complex materials; however, atomic layer deposition (ALD) is uniquely suited to cont

26 Atomic layer deposition (ALD) is used to deposit a sub-1

27 Atomic layer deposition (ALD) is widely used for gas-pha

28 ticles (NPs) can be covered precisely by the atomic layer deposition (ALD) method, whereas the terrac

29 cient photovoltaic material, is protected by atomic layer deposition (ALD) of a highly uniform, 2 nm

30 Subsequent atomic layer deposition (ALD) of Al2O3 or TiO2 along wit

31 es of the M1 phase exposed selectively after atomic layer deposition (ALD) of alumina followed by cru

32 The fabrication process utilizes atomic layer deposition (ALD) of aluminum oxide to confo

33 Atomic layer deposition (ALD) of an alumina overcoat can

34 bly was further stabilized on the surface by atomic layer deposition (ALD) of either Al2O3 or TiO2 ov

35 We investigate atomic layer deposition (ALD) of metal oxide on pristine

36 f Mo(NMe2 )4 as a volatile precursor for the atomic layer deposition (ALD) of MoS2 thin films.

37 ep surface modification method that includes atomic layer deposition (ALD) of TiO2 followed by post-a

38 he initial surface reactions involved in the atomic layer deposition (ALD) of TiO2 from TiI4 and H2O

39 In this report, we show that atomic layer deposition (ALD) of titania (TiO2) and alum

40 dimeric methylalumina surface species during atomic layer deposition (ALD) on a silver surface.

41 We found TiO2 coatings deposited via atomic layer deposition (ALD) onto polyamide-6 nanofiber

42 y and high thermal stability and have useful atomic layer deposition (ALD) precursor properties.

43 Here we introduce a new, robust atomic layer deposition (ALD) procedure for the preparat

44 ium NPs with 45 layers of alumina through an atomic layer deposition (ALD) process that alternated ex

45 created on SnO2 and TiO2 photoelectrodes via atomic layer deposition (ALD) to examine their influence

46 The application of atomic layer deposition (ALD) to metal-organic framework

47 HfO(2) films grown on clean GeNW surfaces by atomic layer deposition (ALD) using an alkylamide precur

48 or SAM preparation and the implementation of atomic layer deposition (ALD) using copper di-sec-butyla

49 an atomic scale are successfully prepared by atomic layer deposition (ALD) with controlled oxidizatio

50 ted with an aluminum oxide film deposited by atomic layer deposition (ALD) with optically pumped NMR

51 es, such as Layer-by-Layer (LbL) deposition, Atomic Layer Deposition (ALD), and porous silicon (porSi

52 anes through electrospinning followed by the atomic layer deposition (ALD), here we presented a high

53 e modifications, like thin films prepared by atomic layer deposition (ALD), that require substrates t

54 two reactants, in a process commonly called atomic layer deposition (ALD).

55 thin films of Zinc Oxide (ZnO) deposited by atomic layer deposition (ALD).

56 rbon by growing a thin layer of FeO(x) using atomic layer deposition (ALD).

57 polypeptide thin films were synthesized via atomic layer deposition (ALD).

58 (TiO2) on the dye-coated photoelectrode via atomic layer deposition (ALD).

59 able of metallating MOFs from the gas phase: atomic layer deposition (ALD).

60 ematite (alpha-Fe(2)O(3)) was synthesized by atomic layer deposition (ALD).

61 palladium nanoparticle surfaces prepared by atomic layer deposition (ALD).

62 olutions using the electrochemical analog of atomic layer deposition (ALD).

63 ive magnetron sputtering, RMS) and chemical (atomic layer deposition, ALD) vapour deposition methods

64 Atomic layer deposition allows us to deposit Pt predomin

65 he sub-10-nm gap size is precisely tuned via atomic layer deposition and highly ordered arrays are pr

66 Atomic layer deposition and magnetron sputter deposition

67 troduce a new patterning technology based on atomic layer deposition and simple adhesive-tape-based p

68 individual single-walled carbon nanotubes by atomic-layer deposition and used as gate dielectrics for

69 and are thus promising precursors for ALD (= atomic layer deposition) and MOCVD (= metal-organic chem

70 ere fabricated using two-photon lithography, atomic layer deposition, and oxygen plasma etching.

71 in a set up that takes full advantage of the atomic layer deposition approach.

72 rature metal pastes, electroless plating and atomic layer deposition can all be used within the micro

73 Next we introduce the use of sol-gel and atomic layer deposition chemistry for the production and

74 rystals with a few nanometres of Al2O3 using atomic layer deposition decreased the film resistivity b

75 sation, including plasma and UV irradiation, atomic layer deposition, electrochemistry, oxidation, re

76 cial structures and surface stabilization by atomic layer deposition, have led to improved charge-sep

77 gn realized by employing templating based on atomic layer deposition makes the material about 10 time

78 Using ZnO thin films deposited via atomic layer deposition, MOF patterns are obtained on pr

79 ) cores and thin layers of TiO2 deposited by atomic layer deposition (nanoITO/TiO2).

80 d on copper (I) oxide (Cu2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3

81 Atomic layer deposition of Al(2)O(3) on the nanoparticul

82 This is achieved by atomic layer deposition of aluminum oxide on Ag NCs and

83 We use atomic layer deposition of amorphous titanium dioxide wi

84 tion catalyst over a wide pH range (1-12) by atomic layer deposition of an overlayer of TiO2.

85 Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotexture

86 te ultramicro- to nanoelectrode arrays using atomic layer deposition of insulating Al2O3 on conductiv

87 ayer proteins and Si surface, area-selective atomic layer deposition of metal oxide-based high-k mate

88 The cathode utilizes atomic layer deposition of palladium nanoparticles on a

89 gh-aspect-ratio Si nanowires was achieved by atomic layer deposition of Pt nanoparticles.

90 The plates are formed by atomic layer deposition of ultrathin alumina films on a

91 ne-third of a monolayer of tungsten grown by atomic layer deposition on a hematite alpha-Fe(2)O(3)(00

92 Copper oxide clusters synthesized via atomic layer deposition on the nodes of the metal-organi

93 volution, Ru nanoparticles were deposited by atomic layer deposition onto TiSi2 nanonets.

94 ting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) foll

95 for zinc oxide nanoparticle growth using the atomic layer deposition precursor diethyl zinc.

96 oatings (4 to 143 nanometers thick) grown by atomic layer deposition prevent corrosion, have electron

97 By using an atomic layer deposition process to grow a dielectric fil

98 The atomic-layer deposition process affords gate insulators

99 Nanostructures prepared by an atomic layer deposition/sulfurization process facilitate

100 We demonstrate, using atomic layer deposition, that the networks can serve as

101 ee-dimensional colloidal nanolithography and atomic layer deposition, the process can be scaled for l

102 imple solid state diffusion method utilizing atomic layer deposition to controllably alter the compos

103 Here, we report the use of atomic layer deposition to fabricate arrays of metal-ins

104 vertically aligned Si nanowires (NWs) using atomic layer deposition to form a dual-absorber system.

105 we prepared thin film hematite electrodes by atomic layer deposition to study the photoelectrochemica

106 ding colloidal self-assembly, sputtering and atomic layer deposition, to fabricate photonic structure

107 In this work using atomic layer deposition we deposited a pinhole free nano

108 thod and a novel process for manganese oxide atomic layer deposition, we produced manganese-doped rut

109 sizing supported bimetallic nanoparticles by atomic layer deposition, where monometallic nanoparticle