ライフサイエンスコーパス: band gap

1 rdering, and its influence on the electronic band gap.

2 d in the conjugated backbone to modulate the band gap.

3 fers an appealing prospect of a size-tunable band gap.

4 m for significant control over the transport band gap.

5 material yellow colored with a much smaller band gap.

6 ss on carrier dynamics when probing near the band gap.

7 actical performance is hampered by the large band gap.

8 edge band crosses the Fermi level within the band gap.

9 is significantly red-shifted compared to the band gap.

10 tems in which one aims to tune an electronic band gap.

11 d shift of the valence band that reduces the band gap.

12 ; these introduce new states in the original band gap.

13 g the system into a virtual state inside the band gap.

14 the Fermi level is gate-tuned to the surface band gap.

15 charge-balanced semiconductor with a narrow band gap.

16 d heavy hole bands and an enlargement of the band gap.

17 wo-dimensional semiconductor with a sizeable band gap.

18 avior is due to a conventional semiconductor band gap.

19 n of shift currents for frequencies near the band gap.

20 ice, leading to progressive reduction of the band gap.

21 ess-dependent quantum confinement on the NPL band gap.

22 nanocrystals possessing a relatively narrow band-gap.

23 kite tandem solar cells with ideally matched band gaps.

24 t have the disadvantage of excessively large band gaps.

25 compared to existing materials with similar band gaps.

26 iers above and below the indirect and direct band gaps.

27 bit ultra-wide normalized all-angle all-mode band gaps.

28 hey often suffer from short lengths and wide band gaps.

29 , the system shows topologically non-trivial band-gaps.

30 ested in these COFs in significantly reduced band gap (1.8-2.2 eV), solid state luminescence and reve

31 e light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resist

32 t excitation energies corresponding to above-band-gap (318-nm) and near-band-gap (405-nm) excitations

33 sponding to above-band-gap (318-nm) and near-band-gap (405-nm) excitations.

34 s known as promising 2D material with a wide band-gap (~6 eV).

35 elax one of the photoelectrode criteria, the band gap, a promising strategy involves complementing th

36 study two broad materials classes: (i) wide band gap AB compounds and (ii) rare earth-main group RM

37 provement making selenium an attractive high-band-gap absorber for multi-junction device applications

38 The recent surge of interest towards high-band gap absorbers for tandem applications led us to rec

39 ag edges contains two Dirac cones within the band gap and an even number of edge bands crossing the F

40 to natural semiconductor properties such as band gap and electron velocity.

41 lar, there is currently no consensus for the band gap and electronic structure of ST12-Ge (tP12, P432

42 e size of graphitic islands affecting the GO band gap and emission energies.

43 eived much interest due to its robust direct band gap and high charge mobility.

44 However, loss of extra energy beyond band gap and light reflection in particular wavelength r

45 Ladder-type conjugated molecules with a low band gap and low LUMO level were synthesized through an

46 ature, and the temperature dependence of the band gap and spin-orbit splitting of the valence band.

47 morphology-dependent resonances, control of band gap and stoichiometry, size-dependent plasmons and

48 The insight into band gap and structure engineering may open up new possi

49 ause the defect level occurs deep within the band gap and thus localizes potential mobile charge carr

50 utline a strategy to systematically tune the band gap and valence and conduction band positions of me

51 shown to be p-type semiconductors with wide band gaps and able to support multiple stable cationic s

52 mobility, ready electron transport, sizeable band gaps and ease of hybridisation, they are set to bec

53 nsional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired.

54 A broad range of band gaps and high mobilities of a 2D semiconductor fami

55 topological insulators, materials with bulk band gaps and protected cross-gap surface states in comp

56 Combining such broad band gaps and superior carrier mobilities, 2D Group 15 m

57 protonated amidinium salts leads to narrower band gaps and to drastically lower LUMO energies.

58 which also indicates the presence of a small band-gap and thus non-metallic or molecular-like behavio

59 ectronic properties stemming from the direct band-gap and valley degeneracy.

60 nhancing visible light absorption, narrowing band gap, and improving photocatalytic activity.

61 erize the polar character, lattice mismatch, band gap, and the band alignment between the perovskite-

62 ambiguities in basic properties, such as the band gap, and the electronic defect densities in the bul

63 ed the tensile strain drastically alters the band gap, and the vanishing gap opens up [100] conductio

64 commodates up to 75 % In(III) with increased band gap, and up to 37.5 % Sb(III) with reduced band gap

65 onolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass.

66 st of the topological insulators have narrow band gaps, and hence have promising applications in the

67 Here, we investigate band gaps, and we report Anderson localization in 2D dis

68 is a composite on its own, multiple resonant band gaps appear in the compound system which do not exi

69 ependent data show detailed evolution of the band-gap, approaching a direct band-gap state.

70 s indicate that the presence and size of the band gaps are controlled by the smallest geometric -feat

71 and material parameters to create frequency band gaps are examined.

72 ybrid materials exhibiting tailored phononic band gaps are fundamentally relevant to innovative mater

73 Metamaterials with acoustic and elastic band gaps are of great interest to scientists and engine

74 11) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of

75 culations also suggest the same trend in the band gap as PBE calculations.

76 Besides decreasing the half-metallic band gap at the boundary the altered atomic stacking at

77 rotection, we present a strategy to tune the band-gap based on a topological phase transition unique

78 posed design for creating frequency stopping band gaps, based on local resonance of the internal stru

79 ere the pumping effect is significant, these band-gaps become asymmetric with respect to the frequenc

80 picture, which results in a nearly complete band gap between full and empty electronic states and st

81 ers from the conductor's surface, the energy band gap between valence and conduction bands of graphen

82 ging from x = 0.06 to x = 0.12 Sb and direct band gaps between 2.21 eV and 1.33 eV.

83 bitally degenerate ground state, reduces the band gap by 160 meV and renormalizes the carrier masses.

84 absorption, and a blue shift of the optical band gap by more than 0.47 eV compared to that of bulk C

85 undaries are associated with locally reduced band gaps (by up to 3 eV).

86 how that new energy bands form where the new band gap can be controlled by the size and pitch of the

87 solution-processed quantum wells wherein the band gap can be tuned by varying the perovskite-layer th

88 The band gap can be tuned from 1.81 eV to 1.42 eV without lo

89 Overall, a wide range of band gaps can be achieved through substitutions and stac

90 Their band gaps can be tuned from 1.6 to 2.3 eV, by changing t

91 hand, the specificity and tunability of the band gaps can generate particularly strong light-matter

92 the magnitude and temperature dependence of band gap, carrier effective mass, and band degeneracy an

93 The band gap changes over a 3-eV range when moving from a pl

94 The direct band gap character and large spin-orbit splitting of the

95 controllable magnetic properties and tunable band-gap, Co(x)(Mg(y)Zn(1-y))(1-x)O(1-v) films may have

96 awn much attention due to the existence of a band gap compared to the widely known graphene.

97 influence their physical properties such as band-gap, conductivity, magnetism, etc.

98 antum yield at excitation energy above twice band gap could indicate a quantum cutting due to the low

99 n transition from localization behavior to a band gap crossing an intermediate regime dominated by tu

100 N doping induce the huge band gap decrease and thus significantly enhance the abs

101 of bilayer MoS2 at 0% strain is 1.25 eV, the band gap decreases as the tensile strain increases on an

102 fy their possible origin, we used the GaAsBi band gap diagram to correlate their activation energies

103 nd parameters for bulk 2H-MX2, including the band gap, direct band gap size at K (-K) point and spin

104 direct-gap insulator in 2D, and its optical band gap displays strong band renormalization effects fr

105 We identified the band gap Eg and phonon cut-off frequency omegamax as the

106 to light with energy close to and above the band gap, electrons are excited from the valence band to

107 The band gap emission of fabricated nanoshells, ranging from

108 The lifetime of this sub-band-gap emission exceeds that of the excitonic transiti

109 ized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers.

110 rately monodisperse and exhibit well-defined band gap energies in the mid-IR region.

111 usters predict the inverse dependence of the band gap energies on sp(2) cluster size.

112 iexciton generation to be close to twice the band gap energy and the efficiency to increase rapidly a

113 emical reactivity coupled with their tunable band gap energy can render the vertical 2D MoS2 unique o

114 Our results indicate a band gap energy coverage from 3.645 eV to 2.697 eV, with

115 tend toward a band structure with a limiting band gap energy of 0.669(6) eV.

116 and the PbI6 octahedra while maintaining the band gap energy within the suitable range for solar cell

117 properties: metal/insulator classification, band gap energy, bulk/shear moduli, Debye temperature an

118 exciton generation efficiencies at twice the band gap energy.

119 graphene nanoribbon provides a platform for band-gap engineering desired for electronic and optoelec

120 nd gap within most known double perovskites, band-gap engineering provides an important approach for

121 Using Cs2 AgBiBr6 as host, band-gap engineering through alloying of In(III) /Sb(III

122 onic crystals and acoustic metamaterials use band-gap engineering to forbid certain frequencies from

123 at both atomic and mesoscale levels with the band-gap evolution through a pressure cycle of 0 <--> 17

124 , free hydroxyl radicals are formed at supra band gap excitation (e.g., 266 nm) from an interfacial e

125 At near band gap excitation, the O3s path leads to the generatio

126 By combining this material with a wider-band gap FA0.83Cs0.17Pb(I0.5Br0.5)3 material, we achieve

127 These band gaps fall into long-wavelength infrared regime and

128 , determined by the gradual narrowing of its band-gap followed by metallization.

129 versatile approach to controllably alter GO band gap for optoelectronics and bio-sensing application

130 vity on the PNS thickness is dictated by the band gap for thinner sheets (<10 nm) and by the effectiv

131 loping silicon structures with direct energy band gaps for effective sunlight harvesting.

132 those Wannier functions, and yields accurate band gaps for solids compared to experiments.

133 Calculated half-metallic band-gaps for TiCl3 and VCl3 sheets are about 0.60 and 1

134 mely low porosities capable of forming large band gaps-frequency ranges with strong wave attenuation-

135 in a change of the nature of the fundamental band gap from indirect to direct.

136 Our theorem explains how GKS band gaps from metageneralized gradient approximations (

137 e obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter

138 explore the fluorescence properties of zero-band-gap graphene.

139 Magnetic oxide semiconductors with wide band gaps have promising spintronic applications, especi

140 ly extended to other types of intriguing low-band-gap HNPs for diverse applications.

141 ed halide hybrid perovskites possess tunable band gaps, however, under illumination they undergo phas

142 ingle type of linker exhibit relatively wide band gaps; however, by mixing linkers of a low-lying con

143 unlike silicon, the nature of the transport band gap in CNTs is not fully understood.

144 e report the realization of a widely tunable band gap in few-layer black phosphorus doped with potass

145 several schemes for inducing a semiconductor band gap in graphene have been explored.

146 Density functional theory suggests that the band gap in the insulating state is reduced by pressure

147 ation, while at the same time have isotropic band gaps in another frequency range.

148 n lower disparity and strong superconducting band gaps in the dominant crystal regions, which lead to

149 Whereas the band gaps in these metastructures are induced by Bragg s

150 rials, involves renormalization of different band gaps in two stages.

151 The first realization of a tunable band-gap in monolayer WS2(1-x) Se2x is demonstrated.

152 ayers of MoSe2, our data suggest that direct band-gap in MoSe2 can be achieved if a strong electric f

153 nuous tuning of its electronic structure and band-gap in the range of visible light to infrared sugge

154 r(S)-content in chrome yellow increases, the band gap increases.

155 VD MoS2 provides scalable access to a direct band gap, inorganic, stable and efficient emitter materi

156 The electronic band gap is a fundamental material parameter requiring c

157 s at the nanoscale and show in-depth how the band gap is affected by a shift of the valence band edge

158 Being a red, transparent compound its band gap is in the visible range of the electromagnetic

159 V per 1% tensile strain, and the decrease in band gap is mainly due to lowering the conduction band a

160 Moreover, the narrowed band gap is partially retainable after releasing pressur

161 I3 (alpha-CsPbI3)-the variant with desirable band gap-is only stable at high temperatures.

162 nI2 vacancies is created resulting in larger band gap, larger unit cell volume, lower trap-state dens

163 - and bi-layer WSe2 which locally modify the band-gap, leading to efficient funnelling of excitons to

164 features, such as the presence of a photonic band gap, low threshold current density, unconventional

165 uced band gap; that is, enabling ca. 0.41 eV band gap modulation through introduction of the two meta

166 Of particular interest is the band gap modulation through substitutions and bilayer fo

167 ms, tetragonal and orthorhombic, both with a band gap much smaller than that of ZnO.

168 Both materials are wide band gap n-type semiconductors and they can interact wit

169 0.074 and account for the anomalously large band gap narrowing in the NixMg1-xO solid solution syste

170 In this work, remarkable band gap narrowing of Cs2 AgBiBr6 is, for the first time

171 11/3Te6, featuring Bi vacancies and a narrow band gap of 0.25(2) eV at room temperature.

172 cetylene is a semiconductor with an indirect band gap of 0.58 eV.

173 ST12-Ge is a semiconductor with an indirect band gap of 0.59 eV and a direct optical transition at 0

174 ropose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and

175 miconducting nature of AgFeS2, with a direct band gap of 0.88 eV.

176 PZ1 possesses broad absorption with a low band gap of 1.55 eV and high absorption coefficient (1.3

177 especially large for a semiconductor with a band gap of 1.55 eV.

178 The BiI3 monolayer has an indirect band gap of 1.57 eV with spin orbit coupling (SOC), indi

179 long-lived photoluminescence, and an optical band gap of 1.6 eV.

180 2 is determined to be a semiconductor with a band gap of 1.657 eV and to have high and anisotropic ca

181 p(2)c-COF is a semiconductor with a discrete band gap of 1.9 electron volts and can be chemically oxi

182 niques and boasts a relatively large optical band gap of 2.15 eV.

183 and large optical transparency with a direct band gap of 2.85 +/- 0.14 eV.

184 d a higher Curie temperature Tc=438 K with a band gap of 3.65 eV.

185 was determined by molecular modeling, and a band gap of 3.77 eV was found.

186 rough which the A-site cation influences the band gap of 3D metal halide perovskites.

187 firm the formation of sp(2)-bonded hBN and a band gap of 5.9 +/- 0.1 eV with no chemical intermixing

188 a low activation energy of 0.210 eV, a giant band gap of 8.5 eV, a small formation energy, a high mel

189 the V d (0) state significantly reduces the band gap of A 2VFeO6, making it smaller than that of ATi

190 At (Vig, Vbg) = (-1 V, +23 V), a band gap of about 36.6 +/- 3 meV forms, and a nearly 40%

191 theorem: In generalized KS theory (GKS), the band gap of an extended system equals the fundamental ga

192 ene nanoribbons (9-AGNRs) with a low optical band gap of approximately 1.0 eV and extended absorption

193 Furthermore, the band gap of BiI3 monolayer can be modulated by biaxial s

194 While the indirect band gap of bilayer MoS2 at 0% strain is 1.25 eV, the ba

195 is a semiconductor, with an approximate bulk band gap of Delta approximately 0.5 eV, and, in its mono

196 The band gap of EA4Pb3Br10-xClx ranges from 3.45 eV (x = 10)

197 ize ozone treatment to controllably tune the band gap of GO, which can significantly enhance its appl

198 for tailoring the electronic properties and band gap of graphene toward its applications, e.g., in s

199 The optical band gap of h-BN monolayer was determined to be 6.0 eV.

200 d hydroxide defect states within the optical band gap of indium oxide.

201 The CPDS copolymer exhibited a band gap of just 1.18 eV, which is among the lowest repo

202 iconducting CNTs, and a 32% reduction in the band gap of narrow-gap CNTs.

203 However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely l

204 pectively, and form electronic states in the band gap of SrTiO3.

205 atomic transition frequency aligned inside a band gap of the PCW, virtual photons mediate coherent sp

206 MoS2, showing an insignificant impact on the band gap of the TMD.

207 However, the short length and wide band gap of these graphene nanoribbons have prevented th

208 3, which unambiguously shows that the energy band gap of this material is direct and reaches E g = (2

209 ears, the size and nature of the bulk energy band gap of this well-known 3D topological insulator sti

210 Further, the band gap of ZnO NRs continuously decreased with the incr

211 We have examined the variation of band gap of ZnO with progressive substitution of N and F

212 )Cs(0.17)Pb(I(0.6)Br(0.4))3, with an optical band gap of ~1.74 eV, and we fabricated perovskite cells

213 An optimum perovskite cell optical band gap of ~1.75 electron volts (eV) can be achieved by

214 broad UV-Vis absorptions and narrow optical band gaps of 1.17-1.29 eV and are p-type semiconductors

215 The energy band gaps of 2D semiconducting Group 15 monolayers cover

216 nion substitution can be employed for tuning band gaps of materials.

217 The obtained indirect band gaps of monolayer VS2, VSe2, and VTe2 given from th

218 The band gaps of the series decrease with increasing n value

219 e theoretical model predicting the frequency band-gaps of periodic plates with sinusoidal corrugation

220 lling, we establish that, given the range of band-gaps of the metal-halide-perovskites, the theoretic

221 Typically, when increasing the band gap, one might assume that a decrease in photoactiv

222 ong been predicted to form in proximity to a band gap opening in the underlying band structure.

223 urements, we demonstrate that the underlying band gap opening occurs inside the magnetic field-induce

224 unlike other graphitic structures, leads to band gap opening.

225 rivatives leads to linear suppression of the band gap or HOMO-LUMO gap as a function of the stacking.

226 ing of materials properties, such as optical band gaps or anomalous magnetoresistance.

227 o finely and reversibly tune the nanocrystal band gap over a wide range of energies (1.8-3.1 eV) via

228 he roughness of the surface, the 2D photonic band gap (PBG) effect and the surface plasmon resonance

229 elop an infrared-absorbing 1.2-electron volt band-gap perovskite, FA0.75Cs0.25Sn0.5Pb0.5I3, that can

230 The limited number of known low-band-gap photoelectrocatalytic materials poses a signifi

231 The resulting low band gap polymer exhibits excellent photo and thermal st

232 an a-Si:H film as a front sub-cell and a low band gap polymer:fullerene blend film as a back cell on

233 The all-PSCs with the wide-band-gap polymer PBDB-T as donor and PZ1 as acceptor sho

234 polymers, making these highly efficient low band gap polymers promising candidates for use in tandem

235 identified the pure spectral properties and band-gap positions of discrete species present in the Cd

236 Using an ultrafast sub band gap probe of 400 nm and white light, we excited tra

237 The alloy also possesses the direct energy band gap property, indicating its strong potential as a

238 ary vanadate oxide photoanodes in the target band-gap range (1.2-2.8 eV).

239 dots with respect to the size dispersion and band-gap range.

240 sed photodetectors was observed suggesting a band gap reduction as a result of the BNNSs' collective

241 ition, our findings suggest that the optical band gap reduction commonly observed for PbS QD solids t

242 rier, and In2Se3/WSe2, showing a significant band gap reduction in the combined system.

243 that Ca6Te3N2 is a highly anisotropic direct band gap semiconductor (Eg = 2.5 eV).

244 hich transforms from a direct to an indirect band gap semiconductor as the number of layers is reduce

245 Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power

246 emitting device with a nanostructured, wide band gap semiconductor layer.

247 tion to a relatively uninvestigated, tunable band gap semiconductor system with tremendous potential

248 -layer tungsten disulfides (WS2) is a direct band gap semiconductor with a gap of 2.1 eV featuring st

249 th the narrow HOMO-LUMO gap, affords a small band gap semiconductor with sigmaRT = 1 x 10(-3) S cm(-1

250 h is a prototypical nuclear ceramic and wide-band-gap semiconductor material.

251 roscopy, we prepared a minimal DQD in a wide band-gap semiconductor matrix.

252 of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward at

253 -In2Se3 nanosheets were found to be indirect band gap semiconductors (Eg = 1.55 eV), and single nanos

254 for multi-junction device applications.Wide band gap semiconductors are important for the developmen

255 Spin defects in wide-band gap semiconductors are promising systems for the re

256 have attracted research attention as direct band gap semiconductors with applications in electronics

257 arbide and gallium nitride, two leading wide band gap semiconductors with significant potential in el

258 This holds especially true for low band gap semiconductors, for which interband excitations

259 a wide range of point defects in other wide-band gap semiconductors, paving the way to controlling t

260 at both EA4Pb3Cl10 and EA4Pb3Br10 are direct band gap semiconductors.

261 to turn bulk and multilayer MX2 into direct band-gap semiconductors by controlling external paramete

262 Direct band-gap semiconductors play the central role in optoele

263 ed molecular materials that behave as narrow band-gap semiconductors, [Fe(tpma)(xbim)](X)(TCNQ)(1.5)D

264 ation, and this structural change leads to a band gap shift as compared to the bulk crystal.

265 tructure calculations indicate that opposite band gap shift directions associated with Sb/In substitu

266 position dependence of the NixMg1-xO optical band gap shows a strong non-parabolic bowing with a disc

267 The energy band gap shows remarkable reduction from 6.19 eV to 3.87

268 bulk 2H-MX2, including the band gap, direct band gap size at K (-K) point and spin splitting size.

269 cantly affect the parameters, especially the band gap size.

270 ng mechanisms, their key feature is that the band-gap size and frequency range can be controlled and

271 lution of the band-gap, approaching a direct band-gap state.

272 cal conductance (a consequence of an optical band gap suitable for PV conversion) and low stability u

273 The obtained band gap systematically decreases with increasing pressu

274 These materials exhibit a tunable band gap that spans the range 0.5-2 eV (600-2500 nm).

275 dem photovoltaics, in part because they have band gaps that can be tuned over a wide range by composi

276 d gap, and up to 37.5 % Sb(III) with reduced band gap; that is, enabling ca. 0.41 eV band gap modulat

277 Closure of the band gap to form an all-organic molecular metal with sig

278 iO2-S/rGO hybrid), with an aim to narrow the band gap to potentially make use of visible light and de

279 Here, we report direct band gap transition for Gallium Phosphide (GaP) when all

280 guration indicate that an indirect to direct band gap transition occurs at x = 0.0092 or higher Sb in

281 or electric field induced indirect to direct band-gap transition in bulk MoSe2.

282 ental protocols to induce indirect-to-direct band gap transitions and coherently oscillating pure spi

283 In particular, these QDs are the only band-gap-tunable infrared chromophore composed entirely

284 Our works demonstrate the feasibility of band gap tuning in a bilayer graphene using ionic liquid

285 The mechanisms of cation-based band gap tuning we describe are broadly applicable to 3D

286 uch sought after high-mobility, large direct band gap two-dimensional layered crystal that is ideal f

287 pproximately 0.3 GPa and then an increase in band gap up to a pressure of 2.7 GPa, in excellent agree

288 Lead iodide perovskites show an increase in band gap upon partial substitution of the larger formami

289 first-principles calculations reveal a wide band gap variation in this material from 0 (bulk) to 1.3

290 ic interaction, leading to a reduced optical band gap, varies across the series of MOFs and is a func

291 ith ionic-liquid gating in order to tune its band gap via application of a perpendicular electric fie

292 hole valence bands by widening the principal band gap, which also results in an improved Seebeck coef

293 eep Ni 3d levels are introduced into the MgO band gap, which significantly reduce the fundamental gap

294 emarkable semiconductors with sizable energy band gaps, which make the TMDs promising building blocks

295 The former effect tends to raise the band gap, while the latter tends to decrease it.

296 orts the formation of wide and low-frequency band gaps, while simultaneously reducing their global ma

297 scence investigation suggests a reduction in band gap with increasing pressure up to approximately 0.

298 icients imply a narrowing of the fundamental band gap with the increase in hydrostatic pressure and a

299 a novel mechanism for emergence of multiple band gaps with extreme attenuation by coupling continuou

300 Given the generally large indirect band gap within most known double perovskites, band-gap