ライフサイエンスコーパス: bandgap

1 it may introduce a topologically nontrivial bandgap.

2 MoTe2, a TMD semiconductor with an infrared bandgap.

3 DA structure are the key factors for tuning bandgap.

4 onradiative recombination rates, and tunable bandgap.

5 ggesting the imminent closure of its optical bandgap.

6 , large carrier mobility, and easily tunable bandgap.

7 from defect states within the semiconductor bandgap.

8 h carrier mobility and a thickness-dependent bandgap.

9 at is applicable for any defect state in the bandgap.

10 of about 2 nm (Pt314eFc) and no significant bandgap.

11 (LSPR) peak of the Au and the semiconductor bandgap.

12 g, can dramatically shrink (renormalize) the bandgap.

13 a tuneable lattice constant, and a tuneable bandgap.

14 ial states cross twice as they span the bulk bandgap.

15 nd shows a possibility of wide tunability of bandgap.

16 otherwise be separated by an indirect local bandgap.

17 rier mobility and thickness dependent direct bandgap.

18 excitation energies just above the indirect bandgap.

19 trap states extending up to 1.5 eV into the bandgap.

20 me is consistent with their relative optical bandgap.

21 isted recombination pathway via the indirect bandgap.

22 ios, negative compressibilities and phononic bandgaps.

23 icated from PbSe nanorods of three different bandgaps.

24 sSnI3 )x (0<x<1) compositions with anomalous bandgaps.

25 However, development of ideal bandgap (1.3-1.4 eV) absorbers is pivotal to further imp

26 A low-bandgap (1.33 eV) Sn-based MA0.5 FA0.5 Pb0.75 Sn0.25 I3

27 cence and photovoltaic analysis, a new ideal bandgap (1.35 eV) absorber composition (MAPb0.5 Sn0.5 (I

28 Narrow bandgap (1.37-1.46 eV) polymers incorporating a head-to-

29 early shows a sub-bandgap emission at 1.7 V (bandgap 2.3 eV).

30 proposed as a prospective alternative large bandgap ( 2 eV), environmentally friendly PV material, w

31 above 3 x 10(20) cm(-3) together with a wide bandgap (3 eV).

32 Here we show that utilizing the below-bandgap absorption of perovskite single crystals can nar

33 Our design uses two different bandgap absorption regions separated by an electron barr

34 on bolometry for wavelengths that are below bandgap absorption.

35 show distinctive optical colors and tunable bandgaps across the visible range in photoluminescence,

36 h can provide more flexibility in tuning the bandgap and also reduces the growth temperature.

37 re we report an indirect hypersonic phononic bandgap and an anomalous dispersion of the acoustic-like

38 of Sr alloyed into the PbTe matrix widen the bandgap and create convergence of the two valence bands

39 The phononic bandgap and dispersion show strong nonlinear strain-depe

40 the off-state the Fermi level moves into the bandgap and electrons suffer from severe back-scattering

41 small (<450 meV) energy loss compared to the bandgap and high (>100 cm(2) V(-1) s(-1) ) intrinsic car

42 for use in optical devices due to its direct bandgap and high photoluminescence intensity.

43 favourable charge-carrier mobility, tunable bandgap and highly anisotropic properties, but it is che

44 sion results in decrease of their electronic bandgap and improvement in the electrical conductivity o

45 However, sub-bandgap and non-radiative losses will significantly degr

46 The concomitant increase of bandgap and optical nonlinearity is truly remarkable in

47 potential optical functionality because the bandgap and optical properties can be tuned by changing

48 can be as high as 43 times due to a smaller bandgap and photocurrent direction alignment for all abs

49 own to exhibit stacking-dependent electronic bandgap and quantum transport properties, the prediction

50 electronics applications due to their direct bandgap and strong light-matter interactions.

51 ciencies, and indeed perovskite-based single bandgap and tandem solar cell designs have yielded impre

52 e on-state, the Fermi level lies in the bulk bandgap and the electrons travel ballistically through t

53 ric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of

54 The induced nontrivial bandgap and the original directional bandgap result in v

55 monolayer ReS2x Se2(1-x) alloy with tunable bandgaps and electrical properties as well as superior a

56 hindered by the paucity of ways of reducing bandgaps and enhancing photocurrent.

57 improve the V oc of subcells with optimized bandgaps and fabricate perovskite-perovskite tandem sola

58 strains with high energy absorption, optical bandgaps and mechanically tunable acoustic bandgaps, hig

59 MoS2 and produce two new symmetries in their bandgaps and offset crystal momentums.

60 synthesized, but most of them have indirect bandgaps and/or do not have bandgaps energies well-suite

61 ibits redshifted absorption, smaller optical bandgap, and higher electron mobility than the nonfluori

62 gical insulating behaviour with a very large bandgap, and the capability to support enhanced thermoel

63 o not have free electrons due to their large bandgaps, and thus they should electronically decouple m

64 eve optimized interfacial contact in a small-bandgap ( approximately 1.2 eV) subcell, which facilitat

65 Compositional engineering of large-bandgap ( approximately 1.8 eV) perovskite is employed t

66 in films of SrNbO3+delta and find that their bandgaps are approximately 4.1 eV.

67 h-Z bcc metals with large spin-orbit-induced bandgaps are discussed as candidates for topologically n

68 ogical features and where the bandwidths and bandgaps are dramatically broadened.

69 um mechanical computations for high-fidelity bandgaps are enormously computation-time intensive and t

70 Upon axially stretching the helices, such bandgaps are suppressed, enabling the design of a new cl

71 d great interest due to their unique tunable bandgap as a function of the number of layers.

72 c heterostructure with a spatially dependent bandgap, as an initial step towards the creation of dive

73 ctional or a combined (global + directional) bandgap at certain frequency regions, depending on the g

74 ces which create highly attenuating phononic bandgaps at frequencies with negligible coupling of SAWs

75 y absorption of low-bangap PTB7-Th and small-bandgap ATT-2 in NIR region, the proof-of-concept STOPVs

76 The enormous bandgap attenuation is up to an order-of-magnitude large

77 (0001) and the observation of its intrinsic bandgap behaviour.

78 turing of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine G

79 r types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconducto

80 not result from a significant change in the bandgap but rather originates from new in-gap states.

81 nce solar spectrum utilization is the graded bandgap, but this has not been previously achieved for p

82 tionally high dielectric constants and large bandgaps, but quenching them to room temperature remains

83 , we show that dilute alloying decreases 1's bandgap by ca. 0.5 eV.

84 Dynamic control of its bandgap can allow for the exploration of new physical ph

85 at only defect levels near the center of the bandgap can be effective recombination centers.

86 ayer graphene (BLG) is a semiconductor whose bandgap can be tuned by a transverse electric field, mak

87 As a result, the bandgap can be tuned which varies from 1.61 to 1.85 eV.

88 ineering is an emerging route for tuning the bandgap, carrier mobility, chemical reactivity and diffu

89 r cell is demonstrated by combining this low-bandgap cell with a semitransparent MAPbI3 cell to achie

90 Low-bandgap CH3 NH3 (Pbx Sn1-x )I3 (0 </= x </= 1) hybrid pe

91 Besides, bandgap closing followed by bandgap opening and the visi

92 e have developed near-infrared-absorbing low bandgap COFs by incorporating donor-acceptor-type isoind

93 t critical concentration or temperature, the bandgap collapses as the system undergoes a semimetal-to

94 Its bandgap complements other widely studied two-dimensional

95 s the role of domain walls, ways to tune the bandgap, consequences arising from the polarization swit

96 impedance-match just above the semiconductor bandgap, creating there a 'squeezed' narrowband near-fie

97 We investigate this direct-to-indirect bandgap crossover, demonstrate a highly tuneable optical

98 Defect-based color centers in wide-bandgap crystalline solids are actively being explored f

99 However, small-bandgap cubic CsPbI3 has been difficult to study due to

100 lane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great poten

101 sotropic energy bands with a tunable, direct bandgap, distinguish black phosphorus 2DEG as a system w

102 give improved performance alongside the wide bandgap donor poly(3-hexylthiophene), a polymer with sig

103 Combined with a low-bandgap donor polymer (PBDTTT-EFT, also known as PCE10),

104 he highest efficiency OPV at present use low-bandgap donor polymers, many of which suffer from proble

105 omplementary absorption to commonly used low bandgap donor polymers, such as PTB7-Th.

106 fect transistors (OFETs) fabricated from low-bandgap donor-acceptor copolymers are resolved.

107 electron-withdrawing units for lowering the bandgap (Eg), donor-acceptor (D-A) copolymerization for

108 However, most TMDs have bandgaps (Eg) and effective masses (m(*)) outside the op

109 udy describes the development of a new small-bandgap electron-acceptor material ATT-2, which shows a

110 e believe, is a result of synthesizing a low bandgap electrospun metal-oxide nanomaterial correspondi

111 a direct bandgap in a conventional indirect bandgap elemental semiconductor.

112 A decrease in the SWCNT bandgap emission (E11) and a new red-shifted emission (E

113 Interestingly, the LED clearly shows a sub-bandgap emission at 1.7 V (bandgap 2.3 eV).

114 rial, broaden and redshift the MoS2 indirect bandgap emission.

115 em have indirect bandgaps and/or do not have bandgaps energies well-suited for photovoltaic applicati

116 hexagonal boron nitride (hBN), with its wide bandgap energy ( approximately 5.0-6.0 eV), has clearly

117 e first double perovskite to show comparable bandgap energy and carrier lifetime to those of (CH3NH3)

118 oltages and thus have relatively low optical bandgap energy loss.

119 the sharp drop in optical absorption at the bandgap energy to achieve a measured absorptance of 76%

120 al materials even in cases where the desired bandgap engineering has been achieved.

121 Bandgap engineering of non-stoichiometric silicon nitrid

122 rse, and versatile systems with prospects in bandgap engineering, catalysis, and energy storage.

123 dTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTexSe1-x alloy

124 We tracked its bandgap evolution during compression in diamond-anvil ce

125 a three-dimensional ceramic printing and the bandgaps experimentally verified.

126 ichalcogenide (TMD) monolayers with a direct bandgap feature tightly bound excitons, strong spin-orbi

127 on for both the spatial organization and the bandgap features, revealing the mechanism for enslavemen

128 renewed attention, triggered notably by low-bandgap ferroelectrics suitable for sunlight spectrum ab

129 or example, by radiating heat exactly at the bandgap frequency of a photovoltaic cell).

130 k black phosphorus, we continuously tune its bandgap from approximately 300 to below 50 meV, using a

131 Here, the addition of a wide-bandgap gap oligomer enhances light absorption in the vi

132 the fabrication of uniform diameter, direct bandgap Ge(1-x)Sn(x) alloy nanowires, with a Sn incorpor

133 ive properties of CdTexSe1-x alloy layers in bandgap-graded CdTe solar cells.

134 Bottom-up synthesis of low-bandgap graphene nanoribbons with various widths is of g

135 possess a high density (>7 g/cm(3)) and wide bandgaps (>1.9 eV), showing great stopping power for har

136 Similar bandgap has been observed in graphene layers on metal su

137 artial oxidized arsenene with tunable direct bandgap has great potentials in the high efficient infra

138 However, its main disadvantage, the lack of bandgap, has not been satisfactorily solved.

139 Semiconductors with a moderate bandgap have enabled modern electronic device technology

140 aterial due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane a

141 l bandgaps and mechanically tunable acoustic bandgaps, high thermal insulation, buoyancy, and fluid s

142 e sulfide film, absorber layers with 1.55 eV bandgap, ideal for single-junction PV, have been achieve

143 Pressure-induced closure of the 1.6 eV bandgap in (MA)PbI3 demonstrates the promise of the cont

144 onalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental sem

145 etical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry

146 t measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was intr

147 Here, we propose that the bandgap in CH3NH3PbI3 has a direct-indirect character.

148 that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heteros

149 ping is one way of introducing an electronic bandgap in otherwise semimetallic graphene.

150 -reversal-invariant surface state in a local bandgap in the (110)-projected bulk band structure.

151 Thus the device operates with a large bandgap in the OFF state and a small or zero bandgap in

152 bandgap in the OFF state and a small or zero bandgap in the ON state.

153 frequency ranges of strong wave attenuation (bandgaps) in the undeformed configuration.

154 toluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing th

155 suspended membrane nanostructure, yielding a bandgap-independent photodetection mechanism.

156 ), broader absorption with a smaller optical bandgap (IOIC2: 1.55 eV vs IHIC2: 1.66 eV), and a higher

157 high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research.

158 bility to control the size of the electronic bandgap is an integral part of solid-state technology.

159 The emergent bandgap is bestowed with lifelike properties, such as th

160 The bandgap is continuously tuned from its commonly accepted

161 Securing a semiconducting bandgap is essential for applying graphene layers in swi

162 Specifically, monolayer MoS2 bandgap is shown to change from 2.8 eV to 1.9 eV by diel

163 interaction of a semiconductor with a below-bandgap laser pulse causes a blue-shift of the bandgap t

164 Here, we present bulk bandgap-like features in a graphene layer epitaxially gr

165 dges, edge resonances at armchair edges, and bandgap-like features in the bulk.

166 ecreases, such that in the vanishingly small bandgap limit, namely when a Dirac point is formed, even

167 for optoelectronic applications such as non-bandgap-limited hyperspectral and broadband photodetecto

168 However, its indirect bandgap limits the applications in optoelectronics.

169 splitting is not linear and the anisotropic bandgap makes it possible to achieve anisotropic propaga

170 anometre is required to effectively tune its bandgap, making the direct electrical control unfeasible

171 Use of large bandgap materials together with electrical injection mak

172 oach to be equally applicable for other high bandgap materials where efficient p-type doing is diffic

173 III-V compound semiconductor direct-bandgap materials with high absorption coefficients are

174 um dots laterally integrated within a larger-bandgap matrix, holds promise for novel electronic and o

175 Such dynamic tuning of bandgap may not only extend the operational wavelength r

176 The wide bandgap MgZnO thin films with various Mg mole fractions

177 Utilizing the bandgap modulation property, a tunable bandgap transisto

178 lectrosynthesis cell (DSPEC) integrates high bandgap, nanoparticle oxide semiconductors with the ligh

179 ys a critical role in stabilizing the direct-bandgap (nearly 5.0 eV), 2D buckled structure.

180 or achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundament

181 est performance reported to date for a large bandgap nonfullerene SMA.

182 ial behaves as a semiconductor with a direct bandgap of 1.0 eV and its conductivity is 1 order of mag

183 The ideal bandgap of 1.3 eV for single-junction solar cell operati

184 NCBDT has a low optical bandgap of 1.45 eV which extends the absorption range to

185 olecular framework, NITI shows a low optical bandgap of 1.49 eV in thin film and a high molar extinct

186 Single-layer Tl2O exhibits a direct bandgap of 1.56 eV and a very high charge carrier mobili

187 The material has an indirect bandgap of 1.95 eV, suited for a tandem solar cell.

188 luated as an absorber, Cs2AgBiBr6 (1), has a bandgap of 1.95 eV.

189 This SMA exhibits a relatively wide optical bandgap of 2.03 eV, which provides a complementary absor

190 tation spectroscopy suggests a quasiparticle bandgap of 2.2 eV, from which we estimate an exciton bin

191 The bandgap of a semiconductor has been an intrinsic propert

192 The bandgap of a semiconductor is one of its most important

193 ed semiconductor-like characteristics with a bandgap of about 1.0 eV, and the other was metal-like wi

194 that partial oxidation can tune the indirect bandgap of arsenene into the direct one.

195 nted here provide a material with the direct bandgap of monolayer MoS2 , without reducing sample thic

196 The bandgap of MoS2 was increased from 1.3 to 1.55 eV by dec

197 ectroscopy, we found that the quasi-particle bandgap of MoSe2 on hBN/Ru is about 0.25 eV smaller than

198 8O/18As, the oxidation can narrow the direct bandgap of oxidized arsenene from 1.29 to 0.02 eV.

199 The bandgap of partial oxidized arsenene is proportional to

200 The composition and the corresponding bandgap of the alloy can be continuously tuned from ReSe

201 faces, propagating at frequencies inside the bandgap of the bulk materials.

202 entified: an emission excited in the optical bandgap of the compounds (about 5 eV), which depends on

203 three different colors, corresponding to the bandgap of three absorbers.

204 the population of electron trap sites in the bandgap of TiO2 and can be independently followed by cha

205 has surged in the past few years, while the bandgaps of current perovskite materials for record effi

206 ty to make rapid and accurate predictions on bandgaps of double perovskites is of much practical inte

207 cient and accurate predictions of electronic bandgaps of double perovskites.

208 Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by red

209 spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substanti

210 As the bandgaps of transition metal dichalcogenides thin films

211 circuit voltage (VOC ) deficit than narrower bandgap ones.

212 Besides, bandgap closing followed by bandgap opening and the visible PL appearing at the poin

213 ical studies recently suggested the possible bandgap opening and tuning.

214 ling (SOC)-induced s-p band inversion or p-p bandgap opening at Brillouin zone centre (Gamma point),

215 e excitation spectroscopy, we identify a sub-bandgap optical transition that severely deteriorates th

216 s a medium-bandgap polymer donor and the low-bandgap organic semiconductor ITIC with high extinction

217 ical spectroscopic techniques to measure the bandgap over a wide doping range.

218 nsive research and development of 1.5-1.6 eV bandgap perovskite absorbers.

219 Wide bandgap perovskite oxides with high room temperature con

220 In this study, we demonstrate graded bandgap perovskite solar cells with steady-state convers

221 ral applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study.

222 e-related defect and trap states after above-bandgap photoexcitation.

223 attractive characteristics, including direct-bandgap photoluminescence.

224 etter balance between absorption loss of sub-bandgap photons and thermalization loss of above-bandgap

225 gap photons and thermalization loss of above-bandgap photons as demonstrated by the Shockley-Queisser

226 luorobenzotriazole copolymer J51 as a medium-bandgap polymer donor and the low-bandgap organic semico

227 inated ITIC-Th1 electron acceptor and a wide-bandgap polymer donor FTAZ based on benzodithiophene and

228 ene polymer solar cell (PSC) based on a wide bandgap polymer donor PM6 containing fluorinated thienyl

229 By matching NITI with a large-bandgap polymer donor, an extraordinary power conversion

230 hiophene) (P3HT), and a high-efficiency, low-bandgap polymer in a single-layer bulk-heterojunction de

231 A low-bandgap polymer:fullerene blend that has significantly r

232 effective conjugation, reducing the optical bandgap, promoting intermolecular pi-pi interactions and

233 r unleashing the complete potential of ideal bandgap PVSCs and prospects for further improvement.

234 Ideal bandgap PVSCs are currently hindered by the poor optoele

235 illumination of a QW biochip with the above bandgap radiation leads to formation of surface oxides a

236 A giant bandgap reduction in layered GaTe is demonstrated.

237 driving force behind phase separation is the bandgap reduction of iodide-rich phases.

238 ght on the mechanism underlying the observed bandgap reduction with increasing thickness, and the rol

239 We identify the screening-sensitive bandgap renormalization for MoS2 monolayer/graphene hete

240 Using coplanar photonic bandgap resonators, we drive Rabi oscillations on nuclea

241 trivial bandgap and the original directional bandgap result in various interesting wave propagation b

242 occurs over a broad spectral range above the bandgap, resulting in free carrier generation, as well a

243 energy transfer between all combinations of bandgap (S1) and higher (S2) transitions.

244 bandgap, the multilayer MoS2 is an indirect bandgap semiconductor and generally optically inactive.

245 re thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating diel

246 catalyst [Re(I)Br(bpy)(CO)3](0) to the wide-bandgap semiconductor TiO2 strongly enhances the rate of

247 y increasing carrier concentration in a wide-bandgap semiconductor with low effective carrier mass th

248 The wide bandgap semiconductor, ZnO, has gained interest recently

249 anced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) i

250 can be achieved by using heavily doped wide-bandgap semiconductors in their transparent regime with

251 tes are a rapidly developing class of medium-bandgap semiconductors which, to date, have been popular

252 osphate materials that are moderate- to wide-bandgap semiconductors with incipient ionic conductivity

253 ggesting that the ACI perovskites are direct bandgap semiconductors with wide valence and conduction

254 oichiometric Ga2FeO4 NCs are intrinsic small bandgap semiconductors, off-stoichiometric GFO NCs, prod

255 ular chromophore-catalyst assemblies on wide bandgap semiconductors.

256 rption edge, indicating that they are direct bandgap semiconductors.

257 d (Q > 10(7)) mechanical modes in a phononic-bandgap shielded membrane resonator.

258 alized fields [Formula: see text] within the bandgap should be accompanied by a transition from large

259 d frequency of GNRs linearly and tunes their bandgap significantly in a non-monotonic manner.

260 be extended to 1,500 nm by doping of smaller-bandgap single-walled carbon nanotubes.

261 A wide bandgap small molecular acceptor, SFBRCN, containing a 3

262 benzodithiophene (BDT-2F) unit and a narrow bandgap small molecule acceptor 2,2'-((2Z,2'Z)-((4,4,9,9

263 atives exhibit higher melting points, larger bandgaps, stronger intermolecular interactions, and high

264 We demonstrate that complete photonic bandgap structures possess substantial LSU and validate

265 oltage loss (V oc,loss ) in small- and large-bandgap subcells.

266 ing electronic properties of graphene with a bandgap that is sufficiently large for room-temperature

267 l known halide double perovskites have large bandgaps that afford weak visible-light absorption.

268 c field can effectively reduce its transport bandgap, the impact of the electric field on light-matte

269 While the monolayer MoS2 exhibits a direct bandgap, the multilayer MoS2 is an indirect bandgap semi

270 -doping leads to the increase in the optical bandgap, thus delaying the onset of bipolar conduction.

271 ating fields [Formula: see text] outside the bandgap to localized fields [Formula: see text] within t

272 ting 2D material and dynamically reduces its bandgap to zero i.e. converts it into a semi-metal.

273 g the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a tw

274 fested by a strain-driven indirect-to-direct bandgap transition and brightening of the dark exciton i

275 ndgap laser pulse causes a blue-shift of the bandgap transition energy, known as the optical Stark ef

276 layer-thickness-dependent direct-to-indirect bandgap transition is observed, and contrary to early li

277 rocess is affected by the indirect-to-direct bandgap transition, and a comparison of results in monol

278 a of Bernal stacking, which is necessary for bandgap tunability.

279 n 2D material is important due to wide range bandgap tunability.

280 A family of bandgap-tunable pyrroles structurally related to rylene

281 f axial GaAs1-xSbx nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wa

282 where the layer number (n) is engineered for bandgap tuning from E g = 1.60 eV (n = infinity; bulk) t

283 ere we reveal the unique thickness-dependent bandgap tuning properties in intrinsic black phosphorus,

284 For the first time, by combining bandgap tuning with an air-annealing step, a CBTSSe-base

285 /off ratio greater than 10(4), and a tunable bandgap up to approximately 100 meV at a displacement fi

286 gaps, respectively, are shown to have energy bandgap value of 0.78 and 1.86 eV, consistent with a met

287 We observe bandgap values of approximately 0.8 eV, which are strong

288 ctors, both the phonon energy and electronic bandgap varied with the boron isotope mass, the latter d

289 e semiconductors and present a wide range of bandgaps varying from 0.24 eV (for the Bi compound) to 0

290 Efficient wide-bandgap (WBG) perovskite solar cells are needed to boost

291 Its nanoparticles show an increased bandgap when compared to bulk materials and they are typ

292 and finally adjust energy levels and reduce bandgap, which is beneficial to light harvesting and enh

293 non-equilibrium material characterized by a bandgap whose edge is enslaved to the wavelength of an e

294 which show a characteristic decrease of the bandgap with respect to their RP perovskite counterparts

295 lly thin two-dimensional semiconductor has a bandgap with strong dependence on dielectric environment

296 They exhibit direct bandgaps with energies in the visible region at the two

297 stals exhibit extraordinarily sharp photonic bandgaps with high reflectivity, long-range periodicity

298 t RbSn0.5Ge0.5I3 possesses not only a direct bandgap within the optimal range of 0.9-1.6 eV but also

299 ctroscopy as a tool to optimize the material bandgap without altering ultrafast photophysics is repor

300 tals can narrow down their effective optical bandgap without changing the composition.